CN111315693B - Method for manufacturing float glass and device for manufacturing float glass - Google Patents

Method for manufacturing float glass and device for manufacturing float glass Download PDF

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CN111315693B
CN111315693B CN201880071650.1A CN201880071650A CN111315693B CN 111315693 B CN111315693 B CN 111315693B CN 201880071650 A CN201880071650 A CN 201880071650A CN 111315693 B CN111315693 B CN 111315693B
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plasma
molten metal
plasma gas
glass
gas
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CN111315693A (en
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中尾圭介
小高秀文
林泰夫
东诚二
堀胜
石川健治
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AGC Inc
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Asahi Glass Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B18/00Shaping glass in contact with the surface of a liquid
    • C03B18/02Forming sheets
    • C03B18/18Controlling or regulating the temperature of the float bath; Composition or purification of the float bath
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00Technologies relating to the processing of minerals
    • Y02P40/50Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57Improving the yield, e-g- reduction of reject rates

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Glass Compositions (AREA)
  • Plasma Technology (AREA)

Abstract

The present invention relates to a method for producing float glass, characterized in that a molten glass obtained by melting a glass raw material is formed into a glass ribbon on molten tin in a float bath, and the obtained glass ribbon is slowly cooled to obtain a glass plate.

Description

浮法玻璃的制造方法和浮法玻璃的制造装置Manufacturing method of float glass and manufacturing apparatus of float glass

技术领域technical field

本发明涉及使锡缺陷减少的浮法玻璃的制造方法和浮法玻璃的制造装置。The present invention relates to a float glass manufacturing method and a float glass manufacturing apparatus that reduce tin defects.

背景技术Background technique

在浮法玻璃的制造中,减少浮法浴内氧对熔融锡的溶解很重要。其理由之一是由于氧溶解在熔融锡中而产生的氧化锡附着于浮法玻璃的下表面而产生锡缺陷。In the manufacture of float glass, it is important to reduce the dissolution of molten tin by oxygen in the float bath. One of the reasons for this is that tin oxide, which is produced by dissolving oxygen in molten tin, adheres to the lower surface of the float glass, thereby causing tin defects.

以往,为了防止浮法浴内的熔融锡与氧的接触,浮法浴尽可能地是封闭结构,吹入高纯度的氮气作为保护用气氛气体以防止空气的侵入,并且同时吹入氢气以除去侵入的微量空气中的氧。应予说明,为了防止空气中氧的侵入,浮法浴内的保护用气氛气体的压力被设定为比浮法浴外部的大气压略高。In the past, in order to prevent the contact between molten tin and oxygen in the float bath, the float bath was closed as much as possible, and high-purity nitrogen was blown as a protective atmosphere to prevent the intrusion of air, and at the same time, hydrogen was blown to remove Oxygen in invading traces of air. In addition, in order to prevent the intrusion of oxygen in the air, the pressure of the protective atmosphere gas in the float bath is set to be slightly higher than the atmospheric pressure outside the float bath.

近年来,为了提高制造合格率,要求更进一步减少锡缺陷。为了应对该要求,需要采用直接除去熔融锡中的氧化锡本身的方法。In recent years, in order to improve the manufacturing yield, it is required to further reduce tin defects. In order to meet this requirement, a method of directly removing tin oxide itself in molten tin is required.

因此,专利文献1中提出如下的方案:从锡浴取出锡浴内的熔融锡的一部分,使取出的熔融锡中的氧化锡发生反应而除去后,返回到锡浴。Therefore, Patent Document 1 proposes a method in which a part of the molten tin in the tin bath is taken out from the tin bath, the tin oxide in the taken out molten tin is reacted and removed, and then returned to the tin bath.

现有技术文献prior art literature

专利文献Patent Literature

专利文献1:日本专利第4281141号公报。Patent Document 1: Japanese Patent No. 4281141.

发明内容SUMMARY OF THE INVENTION

然而,专利文献1中记载的方法需要在锡浴的外部设置使熔融锡循环的循环系统,另外,为了除去熔融锡中的氧化锡,需要将熔融锡冷却至锡浴内的最低温度以下的温度,在返回锡浴前再次加热熔融锡。因此,专利文献1中记载的方法虽然能够减少锡缺陷,但存在设备构成、制造条件繁琐,设备投入费用、运转费用高昂的问题。However, in the method described in Patent Document 1, it is necessary to provide a circulation system for circulating molten tin outside the tin bath, and in order to remove tin oxide in the molten tin, it is necessary to cool the molten tin to a temperature lower than the minimum temperature in the tin bath , heat the molten tin again before returning to the tin bath. Therefore, although the method described in Patent Document 1 can reduce tin defects, there are problems in that the equipment configuration and manufacturing conditions are complicated, and the equipment investment cost and operating cost are high.

本发明鉴于上述课题而完成,目的在于提供一种利用简便的制造条件得到品质良好的玻璃板的浮法玻璃的制造方法和浮法玻璃的制造装置。This invention was made in view of the said subject, and an object is to provide the manufacturing method and the manufacturing apparatus of a float glass which obtain a glass plate of good quality by simple manufacturing conditions.

为了解决上述课题,本发明提供一种浮法玻璃的制造方法,其特征在于,是将熔解玻璃原料而得的熔融玻璃在浮法浴内的熔融金属上成型为玻璃带,缓慢冷却得到的玻璃带而得到玻璃板的浮法玻璃的制造方法,对在上述浮法浴内的气氛中露出的熔融金属露出部喷射等离子体气体。In order to solve the above-mentioned problems, the present invention provides a method for producing a float glass, wherein the glass obtained by slowly cooling a molten glass obtained by melting a glass raw material is formed into a glass ribbon on a molten metal in a float bath, and then gradually cooled. The manufacturing method of the float glass with which the glass plate was obtained, and a plasma gas is sprayed to the molten metal exposure part exposed in the atmosphere in the said float bath.

本发明的浮法玻璃的制造方法中,优选在将上述熔融金属露出部的宽度方向距离设为W(mm)时,以宽度方向距离0.3W以上对熔融金属露出部喷射上述等离子体气体。In the manufacturing method of the float glass of this invention, it is preferable to spray the said plasma gas to the molten metal exposure part with the width direction distance 0.3W or more, when the width direction distance of the said molten metal exposure part is W (mm).

本发明的浮法玻璃的制造方法中,优选以流动方向距离10~400mm对熔融金属露出部喷射上述等离子体气体。In the manufacturing method of the float glass of this invention, it is preferable to spray the said plasma gas with respect to a molten metal exposure part at a flow direction distance of 10-400 mm.

本发明的浮法玻璃的制造方法中,优选以从上述熔融金属露出部起在上方使铅直方向距离分开5~30mm的方式对熔融金属露出部喷射上述等离子体气体。In the manufacturing method of the float glass of this invention, it is preferable to spray the said plasma gas to the molten metal exposed part so that the vertical direction distance may be separated from the said molten metal exposed part upwards by 5-30 mm.

本发明的浮法玻璃的制造方法中,优选上述等离子体气体含有选自He、Ne、Ar、N2、CO、CO2、H2、H2O、NH3、CH4、C2H2、C2H4和C2H6中的至少一种。In the method for producing float glass of the present invention, the plasma gas preferably contains a material selected from the group consisting of He, Ne, Ar, N 2 , CO, CO 2 , H 2 , H 2 O, NH 3 , CH 4 , and C 2 H 2 , at least one of C 2 H 4 and C 2 H 6 .

本发明的浮法玻璃的制造方法中,优选上述等离子体气体被喷射,至到达上述熔融金属露出部为止的气氛中的氢自由基密度为1×1011/cm3以上。In the manufacturing method of the float glass of this invention, it is preferable that the said plasma gas is sprayed, and the hydrogen radical density in the atmosphere until reaching the said molten metal exposure part is 1*10<11>/cm< 3 > or more.

本发明的浮法玻璃的制造方法中,优选以线速0.1~200m/s对熔融金属露出部喷射等离子体气体。In the manufacturing method of the float glass of this invention, it is preferable to spray a plasma gas to a molten metal exposure part at a linear velocity of 0.1-200 m/s.

本发明的浮法玻璃的制造方法中,优选地,In the manufacturing method of float glass of the present invention, preferably,

上述等离子体气体从与上述熔融金属露出部的上方对置而设置的等离子体喷射装置喷射,The plasma gas is sprayed from a plasma spray device provided to face the upper side of the molten metal exposure portion,

上述等离子体喷射装置具备喷射等离子体气体的等离子体气体喷射部,The above-mentioned plasma spraying apparatus includes a plasma gas spraying unit that sprays plasma gas,

上述等离子体气体喷射部包括多个等离子体产生装置,The above-mentioned plasma gas injection part includes a plurality of plasma generating devices,

将导入上述等离子体产生装置的气体进行等离子体化的等离子体化区域中的上述等离子体气体的电子密度为1×1013/cm3以上。The electron density of the plasma gas in the plasmaization region where the gas introduced into the plasma generator is plasmatized is 1×10 13 /cm 3 or more.

本发明的浮法玻璃的制造方法中,优选在上述熔融金属露出部,等离子体气体喷射后的上述熔融金属的氧势为等离子体气体喷射前的上述熔融金属的氧势的1/2以下。In the float glass manufacturing method of this invention, it is preferable that the oxygen potential of the said molten metal after plasma gas injection in the said molten metal exposure part is 1/2 or less of the oxygen potential of the said molten metal before plasma gas injection.

本发明的浮法玻璃的制造方法中,优选被喷射等离子体气体的上述熔融金属的温度为900℃以下。In the manufacturing method of the float glass of this invention, it is preferable that the temperature of the said molten metal to which plasma gas is sprayed is 900 degrees C or less.

另外,本发明提供一种浮法玻璃的制造装置,其特征在于,是将熔解玻璃原料而得的熔融玻璃在浮法浴内的熔融金属上成型为玻璃带,缓慢冷却得到的玻璃带而得到玻璃板的浮法玻璃的制造装置,在露出于上述浮法浴内的气氛中的熔融金属露出部的上方,配置有等离子体喷射装置,上述等离子体喷射装置具备等离子体气体喷射部和支承该等离子体气体喷射部的支承部,上述等离子体气体喷射部对上述熔融金属露出部喷射等离子体气体。In addition, the present invention provides a float glass manufacturing apparatus obtained by forming molten glass obtained by melting glass raw materials on molten metal in a float bath into a glass ribbon, and gradually cooling the obtained glass ribbon. The manufacturing apparatus of the float glass of the glass plate is arranged above the molten metal exposure part exposed in the atmosphere in the said float bath, and the plasma spraying apparatus is arrange|positioned, The said plasma spraying apparatus is provided with the plasma gas spraying part, and supports this The support part of the plasma gas injection part, and the plasma gas injection part injects the plasma gas to the molten metal exposure part.

本发明的浮法玻璃的制造装置中,上述等离子体气体喷射部包括多个等离子体产生装置,In the float glass manufacturing apparatus of the present invention, the plasma gas injection unit includes a plurality of plasma generators,

上述等离子体产生装置优选配置成该等离子体产生装置的长边方向与上述玻璃带的流动方向一致。It is preferable that the said plasma generator is arrange|positioned so that the longitudinal direction of this plasma generator may correspond to the flow direction of the said glass ribbon.

本发明的浮法玻璃的制造装置的上述等离子体产生装置优选气体排出部的截面形状为矩形。It is preferable that the cross-sectional shape of the gas discharge part of the said plasma generator of the manufacturing apparatus of the float glass of this invention is a rectangle.

根据本发明,能够在简便的制造条件下制造品质良好的浮法玻璃。ADVANTAGE OF THE INVENTION According to this invention, the float glass with good quality can be manufactured under simple manufacturing conditions.

附图说明Description of drawings

图1是表示浮法浴的下部结构的一构成例的俯视图。FIG. 1 is a plan view showing a configuration example of a lower structure of a float bath.

图2是图1的I-I线局部截面图。FIG. 2 is a partial cross-sectional view taken along the line II in FIG. 1 .

图3的(a)和图3的(b)是等离子体喷射装置的主要部分示意图,图3的(a)是从平面方向观察得到的示意图,图3的(b)是从图2的截面方向观察得到的示意图。FIGS. 3( a ) and 3 ( b ) are schematic diagrams of main parts of the plasma ejection apparatus, FIG. 3( a ) is a schematic diagram viewed from a plane direction, and FIG. 3( b ) is a cross section of FIG. 2 Schematic view of the obtained direction.

图4的(a)是表示等离子体产生装置的一构成例的截面图,图4的(b)是图4的(a)的II-II线局部截面图。FIG. 4( a ) is a cross-sectional view showing a configuration example of a plasma generator, and FIG. 4( b ) is a partial cross-sectional view taken along line II-II of FIG. 4( a ).

图5的(a)是表示等离子体产生装置的其它一构成例的截面图,图5的(b)是图5的(a)的III-III线局部截面图。FIG. 5( a ) is a cross-sectional view showing another configuration example of the plasma generator, and FIG. 5( b ) is a partial cross-sectional view taken along line III-III of FIG. 5( a ).

图6是表示玻璃板温度500℃的实施例和比较例的SnO2还原速度的图。6 is a graph showing SnO 2 reduction rates of Examples and Comparative Examples at a glass plate temperature of 500°C.

图7是表示玻璃板温度625℃的实施例和比较例的SnO2还原速度的图。FIG. 7 is a graph showing the SnO 2 reduction rate of Examples and Comparative Examples at a glass plate temperature of 625°C.

图8是表示玻璃板温度750℃的实施例和比较例的SnO2还原速度的图。FIG. 8 is a graph showing the SnO 2 reduction rate of Examples and Comparative Examples at a glass plate temperature of 750°C.

图9是表示SnO2还原速度的等离子体气体喷射部位-被喷射部位间的距离依赖性的图。9 is a graph showing the distance dependence of the SnO 2 reduction rate between the plasma gas injection site and the sprayed site.

图10是表示SnO2还原速度的等离子体气体的线速依赖性的图。FIG. 10 is a graph showing the linear velocity dependence of the SnO 2 reduction rate of the plasma gas.

图11是表示因等离子体产生装置有无第2排出部而引起的SnO2还原速度的差异的图。11 is a graph showing a difference in SnO 2 reduction rate depending on whether the plasma generator has a second discharge portion or not.

图12是表示等离子体气体的喷射前后的熔融锡的氧势的时间推移的图。FIG. 12 is a graph showing the temporal transition of the oxygen potential of molten tin before and after the injection of the plasma gas.

具体实施方式Detailed ways

以下,参照附图对本发明的一实施方式的浮法玻璃的制造方法和浮法玻璃的制造装置进行说明。Hereinafter, the manufacturing method of the float glass and the manufacturing apparatus of the float glass which are one Embodiment of this invention are demonstrated, referring drawings.

本发明将熔解玻璃原料而得的熔融玻璃在浮法浴内的熔融金属上成型为玻璃带,缓慢冷却得到的玻璃带而得到玻璃板。In the present invention, molten glass obtained by melting glass raw materials is formed into a glass ribbon on molten metal in a float bath, and the obtained glass ribbon is gradually cooled to obtain a glass plate.

图1是表示浮法浴的下部结构的一构成例的俯视图,图2是图1的I-I线局部截面图。FIG. 1 is a plan view showing a configuration example of a lower structure of a float bath, and FIG. 2 is a partial cross-sectional view taken along the line II in FIG. 1 .

图示的浮法浴100由收纳熔融锡20的熔融金属槽10、配设于熔融金属槽10的上方的顶部12等构成。The float bath 100 shown in the figure is composed of a molten metal tank 10 in which molten tin 20 is accommodated, a ceiling 12 arranged above the molten metal tank 10 , and the like.

应予说明,收纳于熔融金属槽10的金属可以是锡合金、锡以外的金属或其合金。锡合金例如是锡和铜的合金。另外,锡以外的金属例如是铋。另外,锡以外的金属的合金例如是铋和铜的合金。In addition, the metal accommodated in the molten metal tank 10 may be a tin alloy, a metal other than tin, or its alloy. Tin alloys are, for example, alloys of tin and copper. In addition, the metal other than tin is, for example, bismuth. In addition, the alloy of metals other than tin is, for example, an alloy of bismuth and copper.

在熔融金属槽10的熔融锡20上,连续供给熔解玻璃原料而得的熔融玻璃。使熔融玻璃在熔融金属槽10的熔融锡20上流动,成型为带状的玻璃带G。玻璃带G沿图中箭头方向移动。以下,在本说明书中,将图中箭头方向称为玻璃带G的流动方向,将与箭头方向正交的方向称为玻璃带G的宽度方向。另外,本说明书中,“流动方向”和“宽度方向”分别与“玻璃带G的流动方向”和“玻璃带G的宽度方向”一致。On the molten tin 20 of the molten metal tank 10, the molten glass obtained by melting glass raw material is continuously supplied. The molten glass is made to flow on the molten tin 20 of the molten metal tank 10, and it shape|molds into the ribbon-shaped glass ribbon G. The glass ribbon G moves in the direction of the arrow in the figure. Hereinafter, in this specification, the arrow direction in a figure is called the flow direction of the glass ribbon G, and the direction orthogonal to the arrow direction is called the width direction of the glass ribbon G. In addition, in this specification, "flow direction" and "width direction" correspond to "the flow direction of glass ribbon G" and "the width direction of glass ribbon G", respectively.

熔融金属槽10从玻璃带G的流动方向的上游侧,依次具备宽度宽的宽区域Z1、宽度窄的中间区域Z2、宽度窄的窄区域Z3。在玻璃带G与熔融金属槽10的侧壁之间(以下,有时记载为玻璃带G的左右两侧),存在有在浮法浴100内的气氛中露出熔融锡20的熔融金属露出部22。在窄区域Z3的玻璃带G的左右两侧存在的熔融金属露出部22的上方,配置有等离子体喷射装置30。The molten metal tank 10 includes a wide region Z1 having a wide width, a middle region Z2 having a narrow width, and a narrow region Z3 having a narrow width in this order from the upstream side in the flow direction of the glass ribbon G. Between the glass ribbon G and the side wall of the molten metal tank 10 (hereinafter, it may be described as the left and right sides of the glass ribbon G), there is a molten metal exposed portion 22 that exposes the molten tin 20 in the atmosphere in the float bath 100 . . The plasma spray apparatus 30 is arrange|positioned above the molten metal exposure part 22 which exists on the left and right sides of the glass ribbon G of the narrow area Z3.

等离子体喷射装置30具备等离子体气体喷射部31和支承等离子体气体喷射部31的支承部32。等离子体气体喷射部31以向支承部32的下方突出的方式设置。等离子体气体喷射部31由后述的多个等离子体产生装置40a构成,将经等离子体化的气体(以下称为等离子体气体)朝向熔融金属露出部22进行喷射。支承部32的内部设置有用于将等离子体化的气体供给到等离子体产生装置40a的管道和用于对等离子体产生装置40a的电极施加电压的布线。The plasma injection device 30 includes a plasma gas injection part 31 and a support part 32 that supports the plasma gas injection part 31 . The plasma gas injection part 31 is provided so as to protrude below the support part 32 . The plasma gas injection unit 31 is composed of a plurality of plasma generators 40 a to be described later, and injects plasma-ized gas (hereinafter referred to as plasma gas) toward the molten metal exposure portion 22 . The inside of the support part 32 is provided with the duct for supplying the gas to be plasmatized to the plasma generator 40a, and the wiring for applying a voltage to the electrode of the plasma generator 40a.

等离子体气体喷射部31可以设置于支承部32的内部。此时,支承部32必须具备用于至少收纳等离子体产生装置40a的高度。The plasma gas injection part 31 may be provided inside the support part 32 . In this case, the support portion 32 must have a height for accommodating at least the plasma generator 40a.

图3是等离子体喷射装置的主要部分示意图,图3的(a)是从平面方向观察得到的示意图,图3的(b)是从图2的截面方向观察得到的示意图。FIG. 3 is a schematic diagram of a main part of the plasma spray apparatus, FIG. 3( a ) is a schematic diagram viewed from a plane direction, and FIG. 3( b ) is a schematic diagram viewed from a cross-sectional direction of FIG. 2 .

等离子体喷射装置30具备等离子体气体喷射部31和支承部32。图3的(a)所示的等离子体气体喷射部31由8个等离子体产生装置40a构成,等离子体气体喷射部31的宽度方向距离为W1,流动方向距离为L1。这里,“等离子体气体喷射部31的宽度方向距离”是指沿着玻璃带的宽度方向的等离子体气体喷射部31的距离(长度)。另外,“等离子体气体喷射部31的流动方向距离”是指沿着玻璃带的流动方向的等离子体气体喷射部31的距离(长度)。The plasma spray device 30 includes a plasma gas spray portion 31 and a support portion 32 . The plasma gas injection part 31 shown in FIG.3(a) consists of eight plasma generators 40a, and the width direction distance of the plasma gas injection part 31 is W1, and the flow direction distance is L1. Here, "the width direction distance of the plasma gas injection part 31" means the distance (length) of the plasma gas injection part 31 along the width direction of a glass ribbon. In addition, "the distance of the flow direction of the plasma gas injection part 31" means the distance (length) of the plasma gas injection part 31 along the flow direction of a glass ribbon.

等离子体产生装置40a可以配置成等离子体产生装置40a的长边方向与玻璃带的流动方向一致。图3的(a)中,等离子体产生装置40a以沿着玻璃带的流动方向并成2列、沿着玻璃带的宽度方向并成4列的方式配置。The plasma generator 40a may be arranged so that the longitudinal direction of the plasma generator 40a matches the flow direction of the glass ribbon. In FIG.3(a), the plasma generator 40a is arrange|positioned so that it may be arranged in two rows along the flow direction of the glass ribbon, and may be arranged in four rows along the width direction of the glass ribbon.

等离子体产生装置40a优选以沿着玻璃带的流动方向并成1~6列、以沿着玻璃带的宽度方向并成1~15列的方式配置。另外,等离子体产生装置40a可以配置成等离子体装置40a的长边方向与玻璃带的宽度方向一致。此时,等离子体产生装置40a可以以沿着玻璃带的流动方向并成1~15列、沿着玻璃带的宽度方向并成1~6列的方式配置。The plasma generator 40a is preferably arranged in 1 to 6 rows along the flow direction of the glass ribbon, and 1 to 15 rows along the width direction of the glass ribbon. Moreover, the plasma generator 40a may be arrange|positioned so that the longitudinal direction of the plasma apparatus 40a may correspond to the width direction of a glass ribbon. At this time, the plasma generator 40a may be arranged in 1 to 15 rows along the flow direction of the glass ribbon, and 1 to 6 rows along the width direction of the glass ribbon.

在相邻的等离子体产生装置40a间,可以沿着玻璃带的流动方向或宽度方向设置间隙。为了使等离子体气体沿着玻璃带的流动方向或宽度方向均匀地喷射,优选间隙小。A gap may be provided along the flow direction or the width direction of the glass ribbon between adjacent plasma generators 40a. In order to spray the plasma gas uniformly along the flow direction or the width direction of the glass ribbon, the gap is preferably small.

等离子体气体喷射部31可以将等离子体产生装置40a的全部或一部分替换为后述的等离子体产生装置40b。The plasma gas injection part 31 may replace all or a part of the plasma generator 40a with the plasma generator 40b mentioned later.

图4的(a)是表示等离子体产生装置40a的一构成例的截面图,图4的(b)是图4(a)的II-II线局部截面图。图4的(a)所示的等离子体产生装置40a中,在由氧化铝等烧结体构成的框体41的上部,设置有导入等离子体化的气体的气体导入部42。在气体导入部42的下方,存在有将导入的气体等离子体化的等离子体化区域P。在等离子体化区域P,从框体41的侧面隔开间隔插入有2个电极44,一边从气体导入部42连续地导入气体,一边在电极44间施加规定的电压而产生放电,由此将导入的气体等离子体化。等离子体化的气体(等离子体气体)从设置于框体41的下部的气体排出部43排出。FIG. 4( a ) is a cross-sectional view showing a configuration example of the plasma generator 40 a , and FIG. 4( b ) is a partial cross-sectional view taken along the line II-II in FIG. 4( a ). In the plasma generator 40a shown in FIG.4(a), the gas introduction part 42 which introduce|transduces the gas for plasmaization is provided in the upper part of the housing|casing 41 which consists of sintered bodies, such as alumina. Below the gas introduction part 42, there is a plasmaization region P that plasmaizes the introduced gas. In the plasmaization region P, two electrodes 44 are inserted at intervals from the side surface of the frame body 41 , and a predetermined voltage is applied between the electrodes 44 while continuously introducing a gas from the gas introduction portion 42 to generate a discharge. The introduced gas becomes plasma. The plasma gas (plasma gas) is discharged from the gas discharge part 43 provided in the lower part of the casing 41 .

如图4的(b)所示,气体排出部43的截面形状是将电极44的长边方向设为长边的矩形,优选短边特别短的线状的矩形(狭缝)。由此,从气体排出部43排出的等离子体气体的反应活性种变多,因此促进氧化锡的还原。As shown in FIG. 4( b ), the cross-sectional shape of the gas discharge portion 43 is a rectangle whose long side is the longitudinal direction of the electrode 44 , and is preferably a linear rectangle (slit) whose short side is particularly short. Thereby, since the reactive species of the plasma gas discharged from the gas discharge part 43 increases, reduction of tin oxide is promoted.

图5的(a)是表示等离子体产生装置的另一构成例的截面图,图5的(b)是图5的(a)的III-III线局部截面图。图5的(a)所示的等离子体产生装置40b中,在气体排出部(第1排出部)43的下侧设置有第2排出部45。第2排出部45中,多个孔呈直线状排列,能够沿着电极44的长边方向喷射同样密度的自由基。如图5的(b)所示,设置于第2排出部45的孔的截面形状是圆的,也可以是椭圆、三角形、四边形等多边形。由此,能够抑制等离子体气体对处理对象物的放电现象。FIG. 5( a ) is a cross-sectional view showing another configuration example of the plasma generator, and FIG. 5( b ) is a partial cross-sectional view taken along line III-III of FIG. 5( a ). In the plasma generator 40b shown in FIG.5(a), the 2nd discharge part 45 is provided in the lower side of the gas discharge part (1st discharge part) 43. In the second discharge part 45 , a plurality of holes are arranged in a straight line, and radicals of the same density can be ejected along the longitudinal direction of the electrode 44 . As shown in FIG.5(b), the cross-sectional shape of the hole provided in the 2nd discharge part 45 is circular, and may be polygonal, such as an ellipse, a triangle, and a quadrangle. As a result, the discharge phenomenon of the plasma gas to the object to be processed can be suppressed.

图5的(b)所示的等离子体产生装置40b中,优选等离子体产生装置40b的整个下表面中孔所占的总截面积的比率为0.01~5%。In the plasma generator 40b shown in FIG.5(b), it is preferable that the ratio of the total cross-sectional area which a hole occupies in the whole lower surface of the plasma generator 40b is 0.01-5%.

图4的(a)和图5的(a)所示的等离子体产生装置40a、40b优选等离子体放电形式为空心阴极放电。其中,但并不限于此,等离子体产生装置的等离子体放电形式可以是介质势垒放电(DBD)、电弧放电。另外,可以是不使用电极的高频感应放电、微波放电。另外,也可以是利用高频电源进行的放电。The plasma generating devices 40a and 40b shown in Fig. 4(a) and Fig. 5(a) preferably have a hollow cathode discharge in the form of plasma discharge. Among them, but not limited to this, the plasma discharge form of the plasma generating device may be dielectric barrier discharge (DBD) and arc discharge. In addition, high-frequency induction discharge and microwave discharge without using electrodes may be used. In addition, discharge using a high-frequency power supply may be used.

本发明的实施方式中,对熔融金属露出部22从等离子体喷射装置30的等离子体气体喷射部31喷射等离子体气体。由此,根据以下记载的机理,存在于熔融锡20的表面附近的氧化锡被还原。In the embodiment of the present invention, the plasma gas is injected from the plasma gas injection unit 31 of the plasma injection apparatus 30 to the molten metal exposed portion 22 . Thereby, tin oxide existing in the vicinity of the surface of the molten tin 20 is reduced according to the mechanism described below.

如下述式(1)所示,通过使浮法浴100内的气氛中的氧、或熔融玻璃中的氧熔解于熔融金属槽10的熔融锡20而产生氧化锡SnOx(0<x≤2)。As shown in the following formula (1), tin oxide SnO x (0<x≦2 ).

Sn+O2→SnOx (1)Sn+O 2 →SnO x (1)

在浮法浴100内的气氛中,一边吹入高纯度的氮气一边吹入氢气是为了如下述式(2)所示,利用气氛中的氢,使熔融锡20中的氧化锡SnOx还原而返回金属锡Sn。In the atmosphere in the float bath 100 , blowing hydrogen gas while blowing high-purity nitrogen gas is to reduce the tin oxide SnO x in the molten tin 20 with the hydrogen in the atmosphere as shown in the following formula (2). Back to the metal Sn Sn.

SnOx+H2→Sn+H2O(g) (2)SnO x +H 2 →Sn+H 2 O(g) (2)

若对熔融金属露出部22喷射等离子体气体,则存在于等离子体气体中的氢、浮法浴100内的气氛中的氢被自由基化,或离子化。其结果,以更高密度供给作为反应活性种的氢自由基、氢离子,因此促进上述式(2)所示的反应。When the plasma gas is sprayed into the molten metal exposure portion 22 , hydrogen present in the plasma gas and hydrogen in the atmosphere in the float bath 100 are radicalized or ionized. As a result, hydrogen radicals and hydrogen ions, which are reactive species, are supplied at a higher density, thereby promoting the reaction represented by the above formula (2).

应予说明,通过后述的实施例可确认喷射等离子体气体时促进上述式(2)所示的反应。In addition, it can be confirmed that the reaction represented by the above-mentioned formula (2) is accelerated when the plasma gas is injected from the examples described later.

附着于浮法玻璃的下表面而产生锡缺陷的是存在于熔融锡的表面附近的氧化锡。It is tin oxide which exists in the vicinity of the surface of molten tin that adheres to the lower surface of float glass and produces a tin defect.

本发明的实施方式通过对熔融金属露出部22喷射等离子体气体而促进存在于熔融锡20的表面附近的氧化锡的还原,因此能够制造锡缺陷少的品质良好的浮法玻璃。In the embodiment of the present invention, the reduction of tin oxide present in the vicinity of the surface of the molten tin 20 is promoted by spraying the plasma gas into the molten metal exposure portion 22 , so that it is possible to manufacture a high-quality float glass with few tin defects.

本发明的实施方式中,将熔融金属露出部22的宽度方向距离(是沿着玻璃带G的宽度方向的熔融金属露出部22的距离(长度)、且是玻璃带G与熔融金属槽10的内壁之间的距离)设为W(mm)时,以宽度方向距离0.3W以上喷射等离子体气体由于发挥着促进存在于熔融锡20的表面附近的氧化锡的还原的作用,因而优选。喷射等离子体气体的宽度方向距离与等离子体气体喷射部31的宽度方向距离W1一致。宽度方向距离W1更优选为0.5W以上,进一步优选为0.7W以上。其中,若宽度方向距离W1为W以上,则在玻璃带G的上方存在有等离子体喷射装置30,因此有可能附着于等离子体喷射装置30的异物落在玻璃带G而产生缺陷。因此,优选宽度方向距离W1为W以下。In the embodiment of the present invention, the width direction distance of the molten metal exposed portion 22 (which is the distance (length) of the molten metal exposed portion 22 along the width direction of the glass ribbon G, and the distance between the glass ribbon G and the molten metal tank 10 When the distance between the inner walls) is set to W (mm), spraying the plasma gas at a widthwise distance of 0.3W or more is preferable because it acts to promote the reduction of tin oxide existing near the surface of the molten tin 20 . The widthwise distance of the injected plasma gas corresponds to the widthwise distance W1 of the plasma gas injection part 31 . The width direction distance W1 is more preferably 0.5W or more, and further preferably 0.7W or more. However, since the plasma spray apparatus 30 exists above the glass ribbon G when the width direction distance W1 is W or more, there exists a possibility that the foreign material adhering to the plasma spray apparatus 30 may fall on the glass ribbon G and cause a defect. Therefore, it is preferable that the width direction distance W1 is W or less.

图1、2中,等离子体喷射装置30的一部分位于熔融金属槽10的外部是用于与电源等外部设备连接。In FIGS. 1 and 2 , a part of the plasma spray device 30 is located outside the molten metal tank 10 for connection to external equipment such as a power source.

如图1所示,熔融金属露出部22的宽度方向距离W根据熔融金属露出部22在熔融金属槽10的位置,具体而言在玻璃带G的流动方向的位置而不同。As shown in FIG. 1, the width direction distance W of the molten metal exposure part 22 differs depending on the position of the molten metal exposure part 22 in the molten metal tank 10, specifically the position in the flow direction of the glass ribbon G.

另外,熔融金属露出部22的宽度方向距离W也根据熔融金属槽10的尺寸、形状而不同。In addition, the width direction distance W of the molten metal exposure part 22 also differs according to the size and shape of the molten metal tank 10 .

配置等离子体喷射装置30的部位的熔融金属露出部22的宽度方向距离W优选为100~600mm,更优选为200~500mm。其理由如以下记载所示。The widthwise distance W of the molten metal exposed portion 22 at the location where the plasma spray device 30 is arranged is preferably 100 to 600 mm, and more preferably 200 to 500 mm. The reason is as follows.

若宽度方向距离W为100mm以上,则即使玻璃带G在宽度方向变动,也能够防止产生玻璃带G与熔融金属槽10的侧壁接触而附着的麻烦。另外,若宽度方向距离W为600mm以下,则能够在不增大熔融金属槽10的宽度方向的尺寸的情况下,将宽度广的玻璃带G高效地成型。If the width direction distance W is 100 mm or more, even if the glass ribbon G fluctuates in the width direction, the trouble that the glass ribbon G contacts and adheres to the side wall of the molten metal tank 10 can be prevented. Moreover, when the width direction distance W is 600 mm or less, the wide glass ribbon G can be shape|molded efficiently, without increasing the dimension of the width direction of the molten metal tank 10.

本发明的实施方式优选以流动方向距离10~400mm喷射等离子体气体。喷射等离子体气体的流动方向距离与等离子体气体喷射部31的流动方向距离L1一致。流动方向距离L1更优选为50~400mm。这里,“等离子体气体喷射部31的流动方向距离L1”是指沿着玻璃带的流动方向的、等离子体气体喷射部31的距离(长度)。In the embodiment of the present invention, the plasma gas is preferably jetted at a distance in the flow direction of 10 to 400 mm. The flow direction distance of the injected plasma gas corresponds to the flow direction distance L1 of the plasma gas injection part 31 . The flow direction distance L1 is more preferably 50 to 400 mm. Here, "the distance L1 of the flow direction of the plasma gas injection part 31" means the distance (length) of the plasma gas injection part 31 along the flow direction of the glass ribbon.

本发明的实施方式优选从熔融金属露出部22起在上方以使铅直方向距离分开5~30mm的方式喷射等离子体气体。该铅直方向距离跟等离子体气体喷射部31与熔融金属露出部22的铅直方向距离一致。若铅直方向距离变大,则由等离子体气体的喷射带来的上述效果降低。但是,若铅直方向距离过小,则等离子体气体喷射部31有可能与熔融金属露出部22、存在于熔融锡20上的玻璃带G接触。铅直方向距离更优选为5~20mm。In the embodiment of the present invention, it is preferable to spray the plasma gas upward from the molten metal exposure portion 22 so that the distance in the vertical direction is separated by 5 to 30 mm. The vertical distance corresponds to the vertical distance between the plasma gas injection portion 31 and the molten metal exposure portion 22 . When the vertical distance is increased, the above-described effects by the injection of the plasma gas are reduced. However, when the distance in the vertical direction is too small, the plasma gas injection part 31 may come into contact with the molten metal exposure part 22 and the glass ribbon G existing on the molten tin 20 . The distance in the vertical direction is more preferably 5 to 20 mm.

图1、2中,在玻璃带G的左右两侧分别配置1个等离子体喷射装置30。在沿着熔融金属露出部22的流动方向而配置多个等离子体喷射装置30的情况下,多个等离子体喷射装置间的距离没有特别限定,根据所配置的等离子体喷射装置的个数和等离子体喷射装置中的玻璃带G的流动方向距离适当地选择即可。In FIGS. 1 and 2 , one plasma spray device 30 is arranged on the left and right sides of the glass ribbon G, respectively. When a plurality of plasma spraying devices 30 are arranged along the flow direction of the molten metal exposure portion 22, the distance between the plurality of plasma spraying devices is not particularly limited, and depends on the number of plasma spraying devices to be arranged and the plasma The flow direction distance of the glass ribbon G in the bulk jet apparatus may be appropriately selected.

这里,由图4的(a)可知,等离子体产生装置40a喷射等离子体气体的范围由气体排出部43的尺寸确定,气体排出部43的尺寸与电极44间距离大体一致。电极间距离优选为1~600mm。框体41的长边方向距离优选为5~600mm。另外,图4的(a)、图5的(a)的框体41的纸面进深方向的距离优选为5~400mm。Here, as can be seen from FIG. 4( a ), the range in which the plasma generator 40 a sprays the plasma gas is determined by the size of the gas discharge portion 43 , which is substantially the same as the distance between the electrodes 44 . The distance between electrodes is preferably 1 to 600 mm. The distance in the longitudinal direction of the frame body 41 is preferably 5 to 600 mm. Moreover, it is preferable that the distance of the depth direction of the paper surface of the housing|casing 41 of FIG.4(a) and FIG.5(a) is 5-400 mm.

如上所述,因为利用等离子体气体的喷射促进上述式(2)所示的反应,因此等离子体气体优选含有非活性气体和/或还原性气体。应予说明,等离子体气体中含有的气体种类与从气体导入部42导入的气体相同。As described above, the plasma gas preferably contains an inert gas and/or a reducing gas because the reaction represented by the above formula (2) is promoted by the injection of the plasma gas. In addition, the kind of gas contained in the plasma gas is the same as that of the gas introduced from the gas introduction part 42 .

作为非活性气体,可例示He、Ne、Ar、N2。作为还原性气体,可例示CO、CO2,分子中含有H的H2、H2O、NH3、CH4、C2H2、C2H4、C2H6。这些中,等离子体气体优选含有选自He、Ne、Ar、N2、CO、CO2、H2、H2O、NH3、CH4、C2H2、C2H4和C2H6中的至少一种。Examples of the inert gas include He, Ne, Ar, and N 2 . Examples of the reducing gas include CO, CO 2 , and H 2 , H 2 O, NH 3 , CH 4 , C 2 H 2 , C 2 H 4 , and C 2 H 6 containing H in the molecule. Among these, the plasma gas preferably contains a gas selected from the group consisting of He, Ne, Ar, N 2 , CO, CO 2 , H 2 , H 2 O, NH 3 , CH 4 , C 2 H 2 , C 2 H 4 and C 2 H At least one of 6 .

因此,等离子体气体可以仅含有He、Ne、Ar、N2之类的非活性气体。这些中,从成本方面考虑,优选为Ar、N2。Ar和N2中可以仅使用1种,也可以并用2种。Therefore, the plasma gas may contain only inactive gases such as He, Ne, Ar, N 2 . Among these, Ar and N 2 are preferable from the viewpoint of cost. Of Ar and N 2 , only one of them may be used, or two of them may be used in combination.

作为还原性气体,从成本低、反应活性种的生成量多的角度考虑,优选为H2The reducing gas is preferably H 2 from the viewpoints of low cost and a large amount of reactive species generated.

等离子体气体更优选含有H2。此时,可以仅含有H2,也可以含有H2和非活性气体。含有H2和非活性气体的情况下,例如可以是含有H2和Ar的气体、含有H2和N2的气体、含有H2、Ar和N2的气体。The plasma gas more preferably contains H 2 . At this time, only H 2 may be contained, or H 2 and an inert gas may be contained. In the case of containing H 2 and an inert gas, for example, a gas containing H 2 and Ar, a gas containing H 2 and N 2 , or a gas containing H 2 , Ar and N 2 may be used.

如等离子体气体含有H2的情况那样选择积极生成作为反应活性种的氢自由基这样的气体种类的情况下,喷射等离子体气体,至到达熔融金属露出部22为止的气氛中的氢自由基密度以室温换算计优选为1×1011/cm3以上,更优选为1×1012/cm3以上。若氢自由基密度为1×1011/cm3以上,则即使在浮法浴100内的气氛的最低温度部,也促进在熔融锡20的表面附近存在的氧化锡的还原。When a gas species such as a hydrogen radical that actively generates a reactive species is selected, as in the case where the plasma gas contains H 2 , the hydrogen radical density in the atmosphere until the plasma gas reaches the molten metal exposure portion 22 by spraying the plasma gas In terms of room temperature, it is preferably 1×10 11 /cm 3 or more, and more preferably 1×10 12 /cm 3 or more. When the hydrogen radical density is 1×10 11 /cm 3 or more, even in the lowest temperature portion of the atmosphere in the float bath 100 , reduction of tin oxide present near the surface of the molten tin 20 is promoted.

应予说明,等离子体气体仅含有非活性气体的情况下,浮法浴100内的气氛中的氢被卷入等离子体气体喷射部31与熔融金属露出部22之间而被自由基化,因此上述氢自由基密度为1×1011/cm3左右。In addition, when the plasma gas contains only the inert gas, the hydrogen in the atmosphere in the float bath 100 is involved in the space between the plasma gas injection part 31 and the molten metal exposure part 22 and is radicalized, so The aforementioned hydrogen radical density is about 1×10 11 /cm 3 .

氢自由基密度通过真空紫外分光法测定。作为光源,使用光谱已知的微空心等离子体发光光源,作为检测器,使用附有光电子增倍管的单色光分光器。使用位于图4的(a)、图5的(a)所示的等离子体产生装置40a、40b的纸面近前侧的光源,瞄准从等离子体气体喷射部位的长边方向中心位置向纸面下侧分开0~10mm的位置而入射光,利用位于等离子体产生装置40a、40b的纸面背侧的检测器测定吸收强度。由此,根据已知的光谱信息计算氢自由基密度而求出。Hydrogen radical density was determined by vacuum ultraviolet spectrometry. As the light source, a micro-hollow plasma light source with a known spectrum was used, and as the detector, a monochromatic beam splitter with a photomultiplier tube was used. Using the light sources located on the near side of the paper surface of the plasma generators 40a and 40b shown in FIGS. 4( a ) and 5 ( a ), aiming down the paper surface from the center position in the longitudinal direction of the plasma gas injection site The light was incident at positions separated from the sides by 0 to 10 mm, and the absorption intensity was measured by the detectors located on the back side of the paper surface of the plasma generators 40a and 40b. Thus, the hydrogen radical density is calculated from the known spectral information.

本发明的实施方式,优选在含有任意气体种类的情况下,均以线速(室温换算)0.1~200m/s喷射等离子体气体。若线速为0.1m/s以上,则能够将氢自由基充分地输送到熔融金属露出部22。另外,若线速为200m/s以下,能够抑制熔融金属露出部22的液面变动。In the embodiment of the present invention, it is preferable to spray the plasma gas at a linear velocity (in terms of room temperature) of 0.1 to 200 m/s when any gas species is contained. When the linear velocity is 0.1 m/s or more, hydrogen radicals can be sufficiently transported to the molten metal exposed portion 22 . In addition, when the linear velocity is 200 m/s or less, the fluctuation of the liquid level of the molten metal exposed portion 22 can be suppressed.

优选在含有任意气体种类的情况下,等离子体化区域P中的等离子体气体的电子密度以室温换算计均为1×1013/cm3以上。When any gas species is contained, the electron density of the plasma gas in the plasmatized region P is preferably 1×10 13 /cm 3 or more in terms of room temperature.

等离子体气体的电子密度通过在室温下测定等离子体的发光分析中的氢的巴尔默β谱线的斯塔克增宽而算出。在图4的(a)、图5的(a)所示的等离子体产生装置40a、40b的纸面下侧,根据带有电荷耦合器件阵列的多通道分光器检测等离子体气体的发光。等离子体气体的密度根据由得到的氢的巴尔默β谱线的斯塔克增宽导致的半值宽度通过计算求得。The electron density of the plasma gas was calculated by measuring the Stark broadening of the Ballmer β line of hydrogen in the luminescence analysis of the plasma at room temperature. On the lower side of the paper surface of the plasma generating apparatuses 40a and 40b shown in FIG. 4( a ) and FIG. 5( a ), the luminescence of the plasma gas is detected by a multi-channel spectroscope with a charge-coupled device array. The density of the plasma gas was obtained by calculation from the half-value width caused by the obtained Stark broadening of the Ballmer β line of hydrogen.

图1中,在熔融金属露出部22中的玻璃带G的流动方向下游侧的窄区域Z3配置有等离子体喷射装置30,但并不局限于此,也可以在玻璃带G的流动方向上游侧的宽区域Z1、中间区域Z2配置等离子体喷射装置。In FIG. 1 , the plasma spray device 30 is arranged in the narrow region Z3 on the downstream side in the flow direction of the glass ribbon G in the molten metal exposure portion 22 , but the present invention is not limited to this, and the glass ribbon G may be located on the upstream side in the flow direction. The wide area Z1 and the middle area Z2 of the plasma spray device are configured.

其中,在玻璃带的流动方向上游侧配置了等离子体喷射装置的情况下,有可能从氧化锡还原的熔融锡再次被氧化。因此,优选在玻璃带G的流动方向下游侧的窄区域Z3配置等离子体喷射装置30。However, when a plasma spray apparatus is arrange|positioned on the upstream side of the flow direction of a glass ribbon, there exists a possibility that molten tin reduced from tin oxide may be oxidized again. Therefore, it is preferable to arrange|position the plasma spray apparatus 30 in the narrow area Z3 of the downstream side of the flow direction of the glass ribbon G.

在熔融金属槽10内的熔融金属露出部22,优选等离子体气体喷射后的氧势为等离子体气体喷射前的氧势的1/2以下。这是因为随着利用等离子体气体促进氧化锡的还原,熔融金属中的氧势降低。In the molten metal exposed portion 22 in the molten metal tank 10, it is preferable that the oxygen potential after the plasma gas injection is 1/2 or less of the oxygen potential before the plasma gas injection. This is because the oxygen potential in the molten metal decreases as the reduction of tin oxide is promoted with the plasma gas.

氧势可以使用氧化锆式氧传感器进行测定。具体而言,可以将金属制的测定电极、氧势通常恒定的参比电极和传感器沉入熔融金属槽10内,根据因氧势之差产生的电极间的电压差求出氧势。应予说明,传感器使用在高温下显示氧离子导电性的稳定化氧化锆。The oxygen potential can be measured using a zirconia type oxygen sensor. Specifically, a metal measuring electrode, a reference electrode whose oxygen potential is usually constant, and a sensor are immersed in the molten metal tank 10, and the oxygen potential can be obtained from the voltage difference between the electrodes due to the difference in oxygen potential. In addition, the stabilized zirconia which showed oxygen ion conductivity at high temperature was used for the sensor.

着眼于被喷射等离子体气体的熔融金属的温度时,熔融金属温度优选为900℃以下。虽然也取决于利用浮法制造的玻璃的组成,但上述窄区域Z3的熔融金属温度通常为900℃以下。根据所制造的玻璃的组成,优选在900℃以下的温度区域适当地选择被喷射离子体气体的熔融金属的温度。应予说明,被喷射等离子体气体的熔融金属的温度的下限没有特别限定,为了对熔融金属槽10内的熔融金属露出部22喷射等离子体气体,熔融金属温度通常为500℃以上。When focusing on the temperature of the molten metal to which the plasma gas is sprayed, the molten metal temperature is preferably 900° C. or lower. Although it also depends on the composition of the glass manufactured by the float method, the molten metal temperature of the said narrow area Z3 is 900 degrees C or less normally. According to the composition of the glass to be produced, it is preferable to appropriately select the temperature of the molten metal to which the plasma gas is sprayed in the temperature range of 900° C. or lower. The lower limit of the temperature of the molten metal to which the plasma gas is sprayed is not particularly limited, but the temperature of the molten metal is usually 500° C. or higher in order to spray the plasma gas to the molten metal exposed portion 22 in the molten metal tank 10 .

本发明的实施方式能够广泛地应用于利用浮法制造的玻璃板。玻璃组成也没有特别限定,可以应用于钠钙硅酸盐玻璃、铝硅酸盐玻璃、硼硅酸玻璃、无碱玻璃等大范围的组成的玻璃。Embodiment of this invention can be widely applied to the glass plate manufactured by the float method. The glass composition is not particularly limited, either, and it can be applied to glasses with a wide range of compositions, such as soda lime silicate glass, aluminosilicate glass, borosilicate glass, and alkali-free glass.

利用本发明的实施方式制造的玻璃板的厚度没有特别限定,优选为0.1~2.0mm。Although the thickness of the glass plate manufactured by embodiment of this invention is not specifically limited, Preferably it is 0.1-2.0 mm.

实施例Example

以下,使用实施例对本发明进一步进行说明。Hereinafter, the present invention will be further described using examples.

实施例中,对在玻璃板上溅射成膜的SnO2膜,按照以下所示的步骤评价喷射等离子体气体时的SnO2膜还原速度。In the examples, the SnO 2 film reduction rate when the plasma gas was sprayed was evaluated by the procedure shown below with respect to the SnO 2 film formed by sputtering on the glass plate.

作为玻璃板,使用20mm见方的石英玻璃板。在该玻璃板的一个主面整个面上,将厚度500nm的SnO2膜溅射成膜。其后,对SnO2膜的中心φ5mm施加掩模,利用蚀刻溶液除去其它的SnO2膜,制成仅掩模部分残留有SnO2膜的样品。这是为了等离子体气体对SnO2膜整体均匀地进行处理,以便于分析。As the glass plate, a 20 mm square quartz glass plate was used. A SnO 2 film having a thickness of 500 nm was formed by sputtering on the entire one main surface of the glass plate. After that, a mask was applied to the center φ5 mm of the SnO 2 film, and the other SnO 2 films were removed with an etching solution to prepare a sample in which only the SnO 2 film remained in the mask portion. This is for the plasma gas to uniformly process the entire SnO 2 film for easy analysis.

在将玻璃板加热到500℃、625℃或750℃的状态下,从图5所示的等离子体产生装置40b对SnO2膜喷射等离子体气体。In a state where the glass plate is heated to 500° C., 625° C., or 750° C., plasma gas is sprayed onto the SnO 2 film from the plasma generating apparatus 40 b shown in FIG. 5 .

图5的(a)所示的等离子体产生装置40b的放电形式为微空心阴极放电,电极44间的间隔为20mm,从等离子体化区域P的下表面到第1排出部43为止的距离为6mm。第2排出部45的高度为1mm,形成于第2排出部45的截面形状圆形的孔的直径为0.5mm,等离子体产生装置40b的整个下表面中孔所占的总截面积的比率为0.55%。The discharge form of the plasma generator 40b shown in FIG. 5( a ) is a micro-hollow cathode discharge, the interval between the electrodes 44 is 20 mm, and the distance from the lower surface of the plasmaized region P to the first discharge portion 43 is 6mm. The height of the second discharge portion 45 is 1 mm, the diameter of the circular hole in the cross-sectional shape formed in the second discharge portion 45 is 0.5 mm, and the ratio of the total cross-sectional area occupied by the holes in the entire lower surface of the plasma generator 40 b is 0.55%.

将等离子体化区域P的压力作为大气压,从气体导入部42以线速12.1m/s供给Ar和H2的混合气体(H2 8vol%)作为进行等离子体化的气体。Taking the pressure of the plasmaization region P as atmospheric pressure, a mixed gas of Ar and H 2 (H 2 8 vol%) was supplied from the gas introduction part 42 at a linear velocity of 12.1 m/s as a gas for plasma formation.

由频率20kHz的高频电源在电极44间施加9kV的电压。A voltage of 9 kV was applied between the electrodes 44 from a high-frequency power supply having a frequency of 20 kHz.

等离子体气体喷射部位(第2排出部45下表面)-被喷射部位(SnO2膜)间的距离为5mm。The distance between the plasma gas injection site (the lower surface of the second discharge portion 45 ) and the sprayed site (SnO 2 film) was 5 mm.

处理时间(等离子体气体喷射时间)为10sec~90sec。The treatment time (plasma gas injection time) is 10 sec to 90 sec.

对等离子体气体喷射后的SnO2膜用17.5%盐酸进行处理后,实施荧光X射线分析(XRF)。对于等离子体气体喷射实施前的SnO2膜也实施XRF。After the SnO 2 film after plasma gas injection was treated with 17.5% hydrochloric acid, fluorescence X-ray analysis (XRF) was performed. XRF was also performed on the SnO 2 film before the plasma gas spraying was performed.

根据利用XRF得到的Tin-count,使用下述式算出换算残膜厚I(nm)。From the Tin-count obtained by XRF, the converted residual film thickness I (nm) was calculated using the following formula.

I[nm]=500[nm]×等离子体气体喷射后(盐酸处理后)的Tin-count/等离子体气体喷射实施前的Tin-countI[nm]=500[nm]×Tin-count after plasma gas injection (after hydrochloric acid treatment)/Tin-count before plasma gas injection

对相对于处理时间(等离子体气体喷射时间)的换算残膜厚I绘制曲线,将其斜率作为SnO2膜还原速度。A curve was drawn for the converted residual film thickness I with respect to the processing time (plasma gas injection time), and the slope was used as the SnO 2 film reduction rate.

作为比较例,针对在将玻璃板加热到500℃、625℃或750℃的状态下,不对SnO2膜喷射等离子体气体而保持上述处理时间的样品也进行盐酸处理后,实施XRF。As a comparative example, XRF was performed after also performing hydrochloric acid treatment on a sample in which a glass plate was heated to 500° C., 625° C., or 750° C. without spraying plasma gas to the SnO 2 film for the above-mentioned treatment time.

将结果示于图6~图11。图6是表示玻璃板温度500℃的实施例(有等离子体)和比较例(无等离子体)的SnO2还原速度的图。图7是表示玻璃板温度625℃的实施例(有等离子体)和比较例(无等离子体)的SnO2还原速度的图。图8是表示玻璃板温度750℃的实施例(有等离子体)和比较例(无等离子体)的SnO2还原速度的图。根据这些结果,可知通过等离子体气体的喷射,提高了SnO2还原速度。另外,SnO2还原速度存在玻璃板温度依赖性,这次实施的温度区域中,有温度越高,SnO2还原速度越大的趋势。The results are shown in FIGS. 6 to 11 . FIG. 6 is a graph showing the SnO 2 reduction rate of Example (with plasma) and Comparative Example (without plasma) at a glass plate temperature of 500°C. FIG. 7 is a graph showing the SnO 2 reduction rate of Example (with plasma) and Comparative Example (without plasma) at a glass plate temperature of 625°C. FIG. 8 is a graph showing the SnO 2 reduction rate of an example (with plasma) and a comparative example (without plasma) at a glass plate temperature of 750°C. From these results, it can be seen that the reduction rate of SnO 2 is increased by the injection of the plasma gas. In addition, the SnO 2 reduction rate has a glass plate temperature dependence, and in the temperature range implemented this time, the SnO 2 reduction rate tends to increase as the temperature increases.

设为玻璃板温度500℃、处理时间(等离子体气体喷射时间)60sec,将等离子体气体喷射部位(第2排出部45下表面)-被喷射部位(SnO2膜)间的距离设为5mm、10mm、15mm这3个值进行实施。图9是基于该结果表示SnO2还原速度的等离子体气体喷射部位-被喷射部位间的距离依赖性的图。根据图9,可知SnO2还原速度与等离子体气体喷射部位-被喷射部位间的距离呈负相关,等离子体气体喷射部位-被喷射部位间的距离越大,SnO2还原速度越小。认为这是因为距离越大,作为反应活性种的氢自由基的失活量变得越多。The glass plate temperature was 500° C., the treatment time (plasma gas injection time) was 60 sec, and the distance between the plasma gas injection site (the lower surface of the second discharge part 45 ) and the injection site (SnO 2 film) was set to 5 mm, The three values of 10mm and 15mm are implemented. FIG. 9 is a graph showing the distance dependence of the SnO 2 reduction rate between the plasma gas injection site and the sprayed site based on the results. 9 , it can be seen that the SnO 2 reduction speed is negatively correlated with the distance between the plasma gas injection site and the sprayed site. It is considered that this is because the larger the distance, the greater the deactivation amount of the hydrogen radical which is the reactive species.

设为玻璃板温度500℃、处理时间(等离子体气体喷射时间)60sec,从气体导入部42以4.04m/s、12.1m/s、24.3m/s这3个线速供给Ar和H2的混合气体(H2 8vol%)进行实施。图10是表示SnO2还原速度的等离子体气体的线速依赖性的图。根据图10,可知SnO2还原速度与等离子体气体的线速呈正相关,等离子体气体的线速越大,SnO2还原速度越提高。认为这是因为等离子体气体的线速越大,在作为反应活性种的氢自由基不失活的情况下输送到处理对象物的量变得越多。A glass plate temperature of 500° C. and a processing time (plasma gas injection time) of 60 sec were used, and Ar and H 2 were supplied from the gas introduction part 42 at three linear speeds of 4.04 m/s, 12.1 m/s, and 24.3 m/s. Mixed gas (H 2 8 vol%) was carried out. FIG. 10 is a graph showing the linear velocity dependence of the SnO 2 reduction rate of the plasma gas. According to FIG. 10 , it can be seen that the SnO 2 reduction rate is positively correlated with the linear velocity of the plasma gas, and the SnO 2 reduction rate increases as the linear velocity of the plasma gas increases. This is considered to be because the larger the linear velocity of the plasma gas, the larger the amount of the hydrogen radical that is the reactive species is transported to the object to be processed without deactivating the hydrogen radical.

图11是表示因等离子体产生装置有无第2排出部而引起的SnO2还原速度的差异的图。设为线速4.04m/s、等离子体气体喷射部位-被喷射部位(SnO2膜)间的距离为5mm、处理时间(等离子体气体喷射时间)为60sec,按照玻璃板温度为500℃、625℃、750℃这3个值进行实施。图4所示的等离子体产生装置40a的气体排出部43的截面形状是电极44的长边方向距离(长边)20mm、短边0.3mm的线状的矩形。另外,图5所示的等离子体产生装置40b的第2排出部45的截面形状是21个圆以直径0.5mm、间距0.5mm沿着电极44的长边方向并列而成的形状。根据图11可知等离子体产生装置40a的还原速度比等离子体产生装置40b的还原速度快。认为这是因为与等离子体产生装置40a相比等离子体产生装置40b的与等离子体气体接触的壁的面积大,反应活性种被捕捉而失活的量增加。11 is a graph showing a difference in SnO 2 reduction rate depending on whether the plasma generator has a second discharge portion or not. The line speed was 4.04 m/s, the distance between the plasma gas injection part and the part to be injected (SnO 2 film) was 5 mm, the processing time (plasma gas injection time) was 60 sec, and the glass plate temperature was 500° C., 625 3 values of °C and 750°C were implemented. The cross-sectional shape of the gas discharge part 43 of the plasma generator 40a shown in FIG. 4 is a linear rectangle with a distance (long side) of the electrode 44 in the longitudinal direction of 20 mm and a short side of 0.3 mm. In addition, the cross-sectional shape of the second discharge portion 45 of the plasma generator 40b shown in FIG. 5 is a shape in which 21 circles are lined up in the longitudinal direction of the electrode 44 with a diameter of 0.5 mm and a pitch of 0.5 mm. From FIG. 11 , it can be seen that the reduction rate of the plasma generator 40a is faster than the reduction rate of the plasma generator 40b. This is considered to be because the area of the wall in contact with the plasma gas of the plasma generator 40b is larger than that of the plasma generator 40a, and the amount of the reactive species captured and deactivated increases.

图12是表示等离子体气体喷射前后的熔融锡的氧势的时间推移的图。在深度25mm的氧化铝坩埚装入300g的锡,加热到750℃而形成熔融锡。在将使用图4所示的等离子体产生装置40a而等离子体化的Ar和H2的混合气体(H2 4vol%)向熔融锡喷射之前和之后,利用氧化锆式氧传感器测定熔融锡的氧势。从熔融锡表面到等离子体产生装置40a的气体排出部43的距离为5mm,氧化锆式氧传感器的测定部设置在距熔融锡表面20mm的深度。图12的箭头表示使Ar和H2的混合气体等离子体化的时间区域,此时间区域与没有等离子体化的时间区域相比斜率的绝对值大。这表示经等离子体化的时间区域的氧势的衰减速度快。FIG. 12 is a graph showing the time transition of the oxygen potential of molten tin before and after plasma gas injection. 300 g of tin was placed in an alumina crucible with a depth of 25 mm, and heated to 750° C. to form molten tin. Before and after the mixed gas of Ar and H 2 (H 2 4 vol%) plasmatized using the plasma generator 40a shown in FIG. 4 was sprayed onto the molten tin, the oxygen content of the molten tin was measured using a zirconia type oxygen sensor. potential. The distance from the molten tin surface to the gas discharge part 43 of the plasma generator 40a was 5 mm, and the measuring part of the zirconia type oxygen sensor was provided at a depth of 20 mm from the molten tin surface. The arrows in FIG. 12 indicate the time region in which the mixed gas of Ar and H 2 is plasmaized, and the absolute value of the slope is larger in this time region than in the time region without plasmaization. This means that the decay rate of the oxygen potential in the plasmaized time region is fast.

另外,在图12的300分钟附近,没有等离子体化的Ar和H2的混合气体,其氧势的常用对数值收敛于-23附近,与此相对,经等离子体化的Ar和H2的混合气体,在380分钟附近,氧势的常用对数值收敛于-24.3附近。认为这是因等离子体化而熔融锡的氧势的平衡值向更小的值偏移所导致的结果。认为该平衡值根据熔融锡与等离子体产生装置40a之间的距离、等离子体气体的浓度、线速等而变化。In addition, in the vicinity of 300 minutes in FIG. 12 , the common logarithmic value of the oxygen potential of the mixed gas of Ar and H 2 that is not plasmaized converges to the vicinity of −23, whereas the plasma-transformed Ar and H 2 gas has a For the mixed gas, the common logarithmic value of the oxygen potential converges around -24.3 around 380 minutes. This is considered to be the result that the equilibrium value of the oxygen potential of molten tin is shifted to a smaller value due to plasmaization. It is considered that this equilibrium value varies depending on the distance between the molten tin and the plasma generating device 40a, the concentration of the plasma gas, the linear velocity, and the like.

参照特定的实施方式详细说明本发明,但能够在不脱离本发明的构思和范围的基础上进行各种变更、修正对于本领域技术人员而言是清楚的。The present invention will be described in detail with reference to specific embodiments, but it is clear for those skilled in the art that various changes and corrections can be made without departing from the spirit and scope of the present invention.

本申请基于2017年11月7日申请的日本专利申请2017-214508,其内容作为参照援引于此。This application is based on Japanese Patent Application No. 2017-214508 filed on November 7, 2017, the contents of which are incorporated herein by reference.

符号说明Symbol Description

10:熔融金属槽10: Molten metal tank

12:顶部12: Top

20:熔融锡20: Molten Tin

22:熔融金属露出部22: Molten metal exposed part

30:等离子体喷射装置30: Plasma spray device

31:等离子体气体喷射部31: Plasma gas injection part

32:支承部32: Support part

40a,40b:等离子体产生装置40a, 40b: Plasma generation device

41:框体41: Frame

42:气体导入部42: Gas introduction part

43:气体排出部(第1排出部)43: Gas discharge part (first discharge part)

44:电极44: Electrodes

45:第2排出部45: Second discharge part

G:玻璃带G: Glass Ribbon

P:等离子体化区域P: Plasmaized region

Claims (12)

1. A method for producing float glass, characterized in that a molten glass obtained by melting a glass raw material is formed into a glass ribbon on a molten metal in a float bath, and the glass ribbon obtained is slowly cooled to obtain a glass plate,
and injecting a plasma gas into a molten metal exposed portion exposed in the atmosphere in the float bath so as to be separated by a distance of 5 to 30mm in a vertical direction from the molten metal exposed portion upward.
2. The method of manufacturing float glass according to claim 1, wherein the plasma gas is jetted to the molten metal exposed portion at a distance of 0.3W or more in the width direction when the distance in the width direction of the molten metal exposed portion is W mm.
3. A method of manufacturing float glass according to claim 1 or 2, wherein the plasma gas is jetted to the molten metal exposed portion at a distance of 10 to 400mm in a flow direction.
4. The method for manufacturing float glass according to any one of claims 1 to 3, wherein the plasma gas contains a gas selected from He, Ne, Ar, N2、CO、CO2、H2、H2O、NH3、CH4、C2H2、C2H4And C2H6At least one of (1).
5. The method of manufacturing float glass according to claim 4, wherein the plasma gas is ejected so that a hydrogen radical density in an atmosphere until reaching the molten metal exposed portion is 1 x 1011/cm3The above.
6. A float glass production method according to claim 4 or 5, wherein the plasma gas is jetted at a linear velocity of 0.1 to 200m/s to the molten metal exposed portion.
7. The method of manufacturing a float glass according to any one of claims 1 to 6, wherein the plasma gas is ejected from a plasma ejection device provided to face an upper side of the molten metal exposed portion,
the plasma spraying device is provided with a plasma gas spraying part for spraying the plasma gas,
the plasma gas ejection section includes a plurality of plasma generation devices,
the electron density of the plasma gas in a plasma region in which the gas introduced into the plasma generating device is converted into plasma is 1 × 1013/cm3The above.
8. The method for producing float glass according to any one of claims 1 to 7, wherein the oxygen potential of the molten metal after plasma gas injection is 1/2 or less of the oxygen potential of the molten metal before plasma gas injection in the molten metal exposed portion.
9. The method of manufacturing a float glass according to any one of claims 1 to 8, wherein the temperature of the molten metal to which the plasma gas is injected is 900 ℃ or lower.
10. A float glass production apparatus, characterized in that it is a float glass production apparatus for forming a molten glass obtained by melting a glass raw material on a molten metal in a float bath into a glass ribbon, slowly cooling the obtained glass ribbon to obtain a glass sheet,
a plasma jet device is disposed above the molten metal exposed portion in the atmosphere in the float bath so as to be separated by a distance of 5 to 30mm in the vertical direction,
the plasma spraying device comprises a plasma gas spraying part and a supporting part for supporting the plasma gas spraying part,
the plasma gas injection unit injects a plasma gas to the molten metal exposed portion.
11. The manufacturing apparatus of a float glass according to claim 10, wherein the plasma gas injection part comprises a plurality of plasma generating devices,
the plasma generation device is disposed such that the longitudinal direction of the plasma generation device coincides with the flow direction of the glass ribbon.
12. The float glass manufacturing apparatus according to claim 11, wherein a cross-sectional shape of the gas discharge portion of the plasma generating apparatus is a rectangle.
CN201880071650.1A 2017-11-07 2018-11-01 Method for manufacturing float glass and device for manufacturing float glass Active CN111315693B (en)

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JP2017-214508 2017-11-07
JP2017214508 2017-11-07
PCT/JP2018/040776 WO2019093231A1 (en) 2017-11-07 2018-11-01 Method for producing float glass, and apparatus for producing float glass

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1202468A (en) * 1997-06-13 1998-12-23 Ppg工业公司 Method and apparatus for reducing tin defects in float glass
KR20100037990A (en) * 2008-10-02 2010-04-12 주식회사 엘지화학 Method for manufacturing float glass and apparatus for manufacturing the same
KR20130009048A (en) * 2011-07-14 2013-01-23 주식회사 엘지화학 Apparatus and method for removing dross in float bath
CN105683101A (en) * 2013-10-31 2016-06-15 旭硝子株式会社 Tin alloy float bath, device for manufacturing float glass, method of manufacturing float glass, and float glass

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4281141B2 (en) 1999-02-23 2009-06-17 旭硝子株式会社 Float glass manufacturing method and apparatus
WO2010117412A1 (en) * 2009-03-31 2010-10-14 Pilkington Group Limited Method and apparatus for reducing tin oxide in float glass production
CN104245607A (en) * 2012-05-28 2014-12-24 旭硝子株式会社 Device for molding float glass and method producing float glass

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1202468A (en) * 1997-06-13 1998-12-23 Ppg工业公司 Method and apparatus for reducing tin defects in float glass
KR20100037990A (en) * 2008-10-02 2010-04-12 주식회사 엘지화학 Method for manufacturing float glass and apparatus for manufacturing the same
KR20130009048A (en) * 2011-07-14 2013-01-23 주식회사 엘지화학 Apparatus and method for removing dross in float bath
CN105683101A (en) * 2013-10-31 2016-06-15 旭硝子株式会社 Tin alloy float bath, device for manufacturing float glass, method of manufacturing float glass, and float glass

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JPWO2019093231A1 (en) 2020-11-19
KR102518796B1 (en) 2023-04-10

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