CN111312860A - Method for reducing edge recombination of N-Topcon crystalline silicon solar cell - Google Patents
Method for reducing edge recombination of N-Topcon crystalline silicon solar cell Download PDFInfo
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- CN111312860A CN111312860A CN202010181829.1A CN202010181829A CN111312860A CN 111312860 A CN111312860 A CN 111312860A CN 202010181829 A CN202010181829 A CN 202010181829A CN 111312860 A CN111312860 A CN 111312860A
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 230000006798 recombination Effects 0.000 title claims abstract description 28
- 238000005215 recombination Methods 0.000 title claims abstract description 28
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 23
- 230000005540 biological transmission Effects 0.000 claims abstract description 8
- 239000000969 carrier Substances 0.000 claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 238000010329 laser etching Methods 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000002425 crystallisation Methods 0.000 claims description 3
- 230000008025 crystallization Effects 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 2
- 239000005388 borosilicate glass Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
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- Crystallography & Structural Chemistry (AREA)
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Abstract
The invention discloses a method for reducing edge recombination of an N-Topcon crystalline silicon solar cell, which is characterized in that on the basis of the original N-Topcon process, the front side of the N-Topcon cell is subjected to B element doping treatment, and then front side laser edge etching treatment is added; after the back surface is subjected to P element doping treatment, back surface laser edge etching treatment is added, the transverse transmission capability of current carriers in the regions of 30-100 um of the front and back surface edges is reduced, edge recombination current is improved, the edge recombination probability of the N-Topcon crystalline silicon solar cell is reduced, and the photoelectric conversion efficiency is improved.
Description
Technical Field
The invention relates to a method for reducing edge recombination of an N-Topcon battery, belonging to the technical field of crystalline silicon solar cell production.
Background
In the manufacturing process of the crystalline silicon solar cell, optical loss, recombination loss and resistance loss are 3 large loss mechanisms for limiting the photoelectric conversion efficiency limit of the crystalline silicon solar cell, wherein recombination loss exists in the front surface and the back surface, the base body, the edge, a PN junction depletion region and a metal contact region, and the recombination occupation ratio of different regions has certain difference for cells with different structures.
The front surface and the back surface of the N-Topcon battery are respectively subjected to B, P element doping treatment, so that the front surface and the back surface have strong carrier transverse transmission capability; and the front surface and the back surface are respectively passivated by AlOx/SiNx and SiO2/Poly-Si, so that the surface recombination loss is very small. The passivation effect of the front surface and the back surface of the battery is good, so that the front surface and the back surface are combined less; and the carriers on the front surface and the back surface have stronger transverse transport capability, so the edge recombination is larger. This setoff, thus increasing the proportion of edge recombination to total recombination; by combining the two points, the recombination proportion of the edge area compounded in the N-Topcon battery is far greater than that of other structural batteries.
Disclosure of Invention
In order to solve the problems in the background art, the invention aims to provide a method capable of reducing edge recombination of an N-Topcon crystalline silicon solar cell, which increases two laser etching processes, reduces the transverse transmission capability of carriers in the regions of 30-100 um of the front and back edges, improves edge recombination current and improves photoelectric conversion efficiency.
The invention relates to a method for reducing edge recombination of an N-Topcon crystalline silicon solar cell, which is characterized in that on the basis of the original N-Topcon process, the front surface of the N-Topcon cell is subjected to B element doping treatment, and then front surface laser edge etching treatment is added; after the back surface is subjected to P element doping treatment, back surface laser edge etching treatment is added, the transverse transmission capability of current carriers in the regions of 30-100 um of the front and back surface edges is reduced, edge recombination current is improved, the edge recombination probability of the N-Topcon crystalline silicon solar cell is reduced, and the photoelectric conversion efficiency is improved.
Further, the method specifically comprises the following steps:
after doping element B on the front surface of the N-Topcon battery, etching the edge diffusion area of the front surface by using laser pulse;
step two, polishing the laser etching area in a BSG (Boro-Silicate Glass) removing process on the back and the side to improve a damaged layer and a surface dangling bond;
step three, growing SiO on the back of the cell slice2Performing P element doping and annealing crystallization treatment on amorphous silicon Poly-Si, and then secondarily etching the Poly-Si edge on the back by using pulse laser;
and step four, polishing the back etching area by an RCA cleaning process.
Preferably, in the first step, the width of the etching area is 30-100 um.
Preferably, in the third step, the width of the etching region is 30-100 um.
On the basis of the original N-Topcon process, the invention adds two laser etching processes, reduces the transverse transmission capability of carriers in the 30-100 um region of the front and back edges, improves the edge composite current and improves the photoelectric conversion efficiency.
Drawings
FIG. 1 is a schematic diagram of the front side of an N-Topcon cell after diffusion of element B;
FIG. 2 is a schematic diagram of the diffusion of P element in the Poly-Si film on the back side of the N-Topcon cell.
In the figure: d-front side B diffusion area, W-front side laser etching area, P-back side P diffusion area and B-back side laser etching area.
Detailed Description
The invention is described in detail below with reference to the accompanying drawings:
the invention provides a method for reducing edge recombination of an N-Topcon crystalline silicon solar cell, which is characterized in that on the basis of the original N-Topcon process, the front side of the N-Topcon cell is subjected to B element doping treatment, and then front side laser edge etching treatment is added; after the back surface is subjected to P element doping treatment, back surface laser edge etching treatment is added, the transverse transmission capability of current carriers in the regions of 30-100 um of the front and back surface edges is reduced, edge recombination current is improved, the edge recombination probability of the N-Topcon crystalline silicon solar cell is reduced, and the photoelectric conversion efficiency is improved.
Further, the method specifically comprises the following steps:
as shown in fig. 1, in step one, after doping element B on the front surface of the N-Topcon cell, etching the front surface edge diffusion region by using laser pulse;
step two, polishing the laser etching area in the BSG (borosilicate glass) removing process of the back and the side, and improving the damage layer and the surface dangling bond;
growing SiO on the back of the cell plate in the third step as shown in FIG. 22Performing P element doping and annealing crystallization treatment on the Poly-Si, and then secondarily etching the amorphous silicon Poly-Si edge on the back by using pulse laser;
and step four, polishing the back etching area by an RCA cleaning process.
Preferably, in the first step, the width of the etching area is 30-100 um.
Preferably, in the third step, the width of the etching region is 30-100 um.
On the basis of the original N-topcon process, the invention adds two laser etching processes, reduces the transverse transmission capability of carriers in the 30-100 um region of the front and back edges, improves the edge composite current and improves the photoelectric conversion efficiency.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (4)
1. The method for reducing the edge recombination of the N-Topcon crystalline silicon solar cell is characterized in that on the basis of the original N-Topcon process, the front laser edge etching treatment is added after the front of the N-Topcon cell is subjected to B element doping treatment; after the back surface is subjected to P element doping treatment, back surface laser edge etching treatment is added, the transverse transmission capability of current carriers in the regions of 30-100 um of the front and back surface edges is reduced, edge recombination current is improved, the edge recombination probability of the N-Topcon crystalline silicon solar cell is reduced, and the photoelectric conversion efficiency is improved.
2. The method for reducing edge recombination of an N-Topcon crystalline silicon solar cell according to claim 1, wherein the method is specifically:
after doping the front surface B of the N-topcon battery, etching a front surface edge diffusion area by using laser pulse;
polishing the laser etching area in the back and side BSG removing process to improve the damaged layer and the surface dangling bond;
step three, growing SiO on the back of the cell slice2Poly-Si laminated passivation film, and PAfter P element doping and annealing crystallization treatment are carried out on oly-Si, etching the poly-Si edge on the back by using pulse laser for the second time;
and step four, polishing the back etching area by an RCA cleaning process.
3. The method for reducing the edge recombination of the N-Topcon crystalline silicon solar cell according to claim 2, wherein in the first step, the width of the etching area is 30-100 um.
4. The method for reducing the edge recombination of the N-Topcon crystalline silicon solar cell according to claim 2, wherein in the third step, the width of the etching area is 30-100 um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010181829.1A CN111312860A (en) | 2020-03-16 | 2020-03-16 | Method for reducing edge recombination of N-Topcon crystalline silicon solar cell |
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| CN202010181829.1A CN111312860A (en) | 2020-03-16 | 2020-03-16 | Method for reducing edge recombination of N-Topcon crystalline silicon solar cell |
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| CN111312860A true CN111312860A (en) | 2020-06-19 |
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| CN202010181829.1A Pending CN111312860A (en) | 2020-03-16 | 2020-03-16 | Method for reducing edge recombination of N-Topcon crystalline silicon solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112768564A (en) * | 2021-01-20 | 2021-05-07 | 东方日升（常州）新能源有限公司 | Light injection passivation method of Topcon battery |
| WO2023083418A1 (en) * | 2021-11-11 | 2023-05-19 | Hanwha Q Cells Gmbh | Solar cell and method for the production of a solar cell |
Citations (6)
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|---|---|---|---|---|
| CN102969401A (en) * | 2012-12-07 | 2013-03-13 | 润峰电力有限公司 | Production process of efficient crystal silicon solar battery by adopting laser isolation |
| CN104362219A (en) * | 2014-11-06 | 2015-02-18 | 天威新能源控股有限公司 | Crystalline solar cell production process |
| CN104835875A (en) * | 2015-04-20 | 2015-08-12 | 上海大族新能源科技有限公司 | Preparation method and side edge laser isolation method for crystalline silicon solar cell |
| CN106299027A (en) * | 2016-08-30 | 2017-01-04 | 浙江启鑫新能源科技股份有限公司 | A kind of preparation method of N-type monocrystalline double-side cell |
| CN107968127A (en) * | 2017-12-19 | 2018-04-27 | 泰州中来光电科技有限公司 | One kind passivation contact N-type solar cell and preparation method, component and system |
| JP2019110185A (en) * | 2017-12-18 | 2019-07-04 | 株式会社アルバック | Manufacturing method of solar battery |
-
2020
- 2020-03-16 CN CN202010181829.1A patent/CN111312860A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102969401A (en) * | 2012-12-07 | 2013-03-13 | 润峰电力有限公司 | Production process of efficient crystal silicon solar battery by adopting laser isolation |
| CN104362219A (en) * | 2014-11-06 | 2015-02-18 | 天威新能源控股有限公司 | Crystalline solar cell production process |
| CN104835875A (en) * | 2015-04-20 | 2015-08-12 | 上海大族新能源科技有限公司 | Preparation method and side edge laser isolation method for crystalline silicon solar cell |
| CN106299027A (en) * | 2016-08-30 | 2017-01-04 | 浙江启鑫新能源科技股份有限公司 | A kind of preparation method of N-type monocrystalline double-side cell |
| JP2019110185A (en) * | 2017-12-18 | 2019-07-04 | 株式会社アルバック | Manufacturing method of solar battery |
| CN107968127A (en) * | 2017-12-19 | 2018-04-27 | 泰州中来光电科技有限公司 | One kind passivation contact N-type solar cell and preparation method, component and system |
Non-Patent Citations (1)
| Title |
|---|
| 于波 等: "n 型双面 TOPCon 太阳电池钝化技术", 《半导体制造技术》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112768564A (en) * | 2021-01-20 | 2021-05-07 | 东方日升（常州）新能源有限公司 | Light injection passivation method of Topcon battery |
| CN112768564B (en) * | 2021-01-20 | 2022-08-30 | 东方日升（常州）新能源有限公司 | Light injection passivation method for Topcon battery |
| WO2023083418A1 (en) * | 2021-11-11 | 2023-05-19 | Hanwha Q Cells Gmbh | Solar cell and method for the production of a solar cell |
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Application publication date: 20200619 |