CN111312860A - Method for reducing edge recombination of N-Topcon crystalline silicon solar cell - Google Patents

Method for reducing edge recombination of N-Topcon crystalline silicon solar cell Download PDF

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Publication number
CN111312860A
CN111312860A CN202010181829.1A CN202010181829A CN111312860A CN 111312860 A CN111312860 A CN 111312860A CN 202010181829 A CN202010181829 A CN 202010181829A CN 111312860 A CN111312860 A CN 111312860A
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topcon
edge
solar cell
crystalline silicon
silicon solar
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廖光明
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Jiangsu Sunport Power Corp Ltd
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Jiangsu Sunport Power Corp Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Crystallography & Structural Chemistry (AREA)
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Abstract

The invention discloses a method for reducing edge recombination of an N-Topcon crystalline silicon solar cell, which is characterized in that on the basis of the original N-Topcon process, the front side of the N-Topcon cell is subjected to B element doping treatment, and then front side laser edge etching treatment is added; after the back surface is subjected to P element doping treatment, back surface laser edge etching treatment is added, the transverse transmission capability of current carriers in the regions of 30-100 um of the front and back surface edges is reduced, edge recombination current is improved, the edge recombination probability of the N-Topcon crystalline silicon solar cell is reduced, and the photoelectric conversion efficiency is improved.

Description

Method for reducing edge recombination of N-Topcon crystalline silicon solar cell
Technical Field
The invention relates to a method for reducing edge recombination of an N-Topcon battery, belonging to the technical field of crystalline silicon solar cell production.
Background
In the manufacturing process of the crystalline silicon solar cell, optical loss, recombination loss and resistance loss are 3 large loss mechanisms for limiting the photoelectric conversion efficiency limit of the crystalline silicon solar cell, wherein recombination loss exists in the front surface and the back surface, the base body, the edge, a PN junction depletion region and a metal contact region, and the recombination occupation ratio of different regions has certain difference for cells with different structures.
The front surface and the back surface of the N-Topcon battery are respectively subjected to B, P element doping treatment, so that the front surface and the back surface have strong carrier transverse transmission capability; and the front surface and the back surface are respectively passivated by AlOx/SiNx and SiO2/Poly-Si, so that the surface recombination loss is very small. The passivation effect of the front surface and the back surface of the battery is good, so that the front surface and the back surface are combined less; and the carriers on the front surface and the back surface have stronger transverse transport capability, so the edge recombination is larger. This setoff, thus increasing the proportion of edge recombination to total recombination; by combining the two points, the recombination proportion of the edge area compounded in the N-Topcon battery is far greater than that of other structural batteries.
Disclosure of Invention
In order to solve the problems in the background art, the invention aims to provide a method capable of reducing edge recombination of an N-Topcon crystalline silicon solar cell, which increases two laser etching processes, reduces the transverse transmission capability of carriers in the regions of 30-100 um of the front and back edges, improves edge recombination current and improves photoelectric conversion efficiency.
The invention relates to a method for reducing edge recombination of an N-Topcon crystalline silicon solar cell, which is characterized in that on the basis of the original N-Topcon process, the front surface of the N-Topcon cell is subjected to B element doping treatment, and then front surface laser edge etching treatment is added; after the back surface is subjected to P element doping treatment, back surface laser edge etching treatment is added, the transverse transmission capability of current carriers in the regions of 30-100 um of the front and back surface edges is reduced, edge recombination current is improved, the edge recombination probability of the N-Topcon crystalline silicon solar cell is reduced, and the photoelectric conversion efficiency is improved.
Further, the method specifically comprises the following steps:
after doping element B on the front surface of the N-Topcon battery, etching the edge diffusion area of the front surface by using laser pulse;
step two, polishing the laser etching area in a BSG (Boro-Silicate Glass) removing process on the back and the side to improve a damaged layer and a surface dangling bond;
step three, growing SiO on the back of the cell slice2Performing P element doping and annealing crystallization treatment on amorphous silicon Poly-Si, and then secondarily etching the Poly-Si edge on the back by using pulse laser;
and step four, polishing the back etching area by an RCA cleaning process.
Preferably, in the first step, the width of the etching area is 30-100 um.
Preferably, in the third step, the width of the etching region is 30-100 um.
On the basis of the original N-Topcon process, the invention adds two laser etching processes, reduces the transverse transmission capability of carriers in the 30-100 um region of the front and back edges, improves the edge composite current and improves the photoelectric conversion efficiency.
Drawings
FIG. 1 is a schematic diagram of the front side of an N-Topcon cell after diffusion of element B;
FIG. 2 is a schematic diagram of the diffusion of P element in the Poly-Si film on the back side of the N-Topcon cell.
In the figure: d-front side B diffusion area, W-front side laser etching area, P-back side P diffusion area and B-back side laser etching area.
Detailed Description
The invention is described in detail below with reference to the accompanying drawings:
the invention provides a method for reducing edge recombination of an N-Topcon crystalline silicon solar cell, which is characterized in that on the basis of the original N-Topcon process, the front side of the N-Topcon cell is subjected to B element doping treatment, and then front side laser edge etching treatment is added; after the back surface is subjected to P element doping treatment, back surface laser edge etching treatment is added, the transverse transmission capability of current carriers in the regions of 30-100 um of the front and back surface edges is reduced, edge recombination current is improved, the edge recombination probability of the N-Topcon crystalline silicon solar cell is reduced, and the photoelectric conversion efficiency is improved.
Further, the method specifically comprises the following steps:
as shown in fig. 1, in step one, after doping element B on the front surface of the N-Topcon cell, etching the front surface edge diffusion region by using laser pulse;
step two, polishing the laser etching area in the BSG (borosilicate glass) removing process of the back and the side, and improving the damage layer and the surface dangling bond;
growing SiO on the back of the cell plate in the third step as shown in FIG. 22Performing P element doping and annealing crystallization treatment on the Poly-Si, and then secondarily etching the amorphous silicon Poly-Si edge on the back by using pulse laser;
and step four, polishing the back etching area by an RCA cleaning process.
Preferably, in the first step, the width of the etching area is 30-100 um.
Preferably, in the third step, the width of the etching region is 30-100 um.
On the basis of the original N-topcon process, the invention adds two laser etching processes, reduces the transverse transmission capability of carriers in the 30-100 um region of the front and back edges, improves the edge composite current and improves the photoelectric conversion efficiency.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims (4)

1. The method for reducing the edge recombination of the N-Topcon crystalline silicon solar cell is characterized in that on the basis of the original N-Topcon process, the front laser edge etching treatment is added after the front of the N-Topcon cell is subjected to B element doping treatment; after the back surface is subjected to P element doping treatment, back surface laser edge etching treatment is added, the transverse transmission capability of current carriers in the regions of 30-100 um of the front and back surface edges is reduced, edge recombination current is improved, the edge recombination probability of the N-Topcon crystalline silicon solar cell is reduced, and the photoelectric conversion efficiency is improved.
2. The method for reducing edge recombination of an N-Topcon crystalline silicon solar cell according to claim 1, wherein the method is specifically:
after doping the front surface B of the N-topcon battery, etching a front surface edge diffusion area by using laser pulse;
polishing the laser etching area in the back and side BSG removing process to improve the damaged layer and the surface dangling bond;
step three, growing SiO on the back of the cell slice2Poly-Si laminated passivation film, and PAfter P element doping and annealing crystallization treatment are carried out on oly-Si, etching the poly-Si edge on the back by using pulse laser for the second time;
and step four, polishing the back etching area by an RCA cleaning process.
3. The method for reducing the edge recombination of the N-Topcon crystalline silicon solar cell according to claim 2, wherein in the first step, the width of the etching area is 30-100 um.
4. The method for reducing the edge recombination of the N-Topcon crystalline silicon solar cell according to claim 2, wherein in the third step, the width of the etching area is 30-100 um.
CN202010181829.1A 2020-03-16 2020-03-16 Method for reducing edge recombination of N-Topcon crystalline silicon solar cell Pending CN111312860A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112768564A (en) * 2021-01-20 2021-05-07 东方日升(常州)新能源有限公司 Light injection passivation method of Topcon battery
WO2023083418A1 (en) * 2021-11-11 2023-05-19 Hanwha Q Cells Gmbh Solar cell and method for the production of a solar cell

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102969401A (en) * 2012-12-07 2013-03-13 润峰电力有限公司 Production process of efficient crystal silicon solar battery by adopting laser isolation
CN104362219A (en) * 2014-11-06 2015-02-18 天威新能源控股有限公司 Crystalline solar cell production process
CN104835875A (en) * 2015-04-20 2015-08-12 上海大族新能源科技有限公司 Preparation method and side edge laser isolation method for crystalline silicon solar cell
CN106299027A (en) * 2016-08-30 2017-01-04 浙江启鑫新能源科技股份有限公司 A kind of preparation method of N-type monocrystalline double-side cell
CN107968127A (en) * 2017-12-19 2018-04-27 泰州中来光电科技有限公司 One kind passivation contact N-type solar cell and preparation method, component and system
JP2019110185A (en) * 2017-12-18 2019-07-04 株式会社アルバック Manufacturing method of solar battery

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102969401A (en) * 2012-12-07 2013-03-13 润峰电力有限公司 Production process of efficient crystal silicon solar battery by adopting laser isolation
CN104362219A (en) * 2014-11-06 2015-02-18 天威新能源控股有限公司 Crystalline solar cell production process
CN104835875A (en) * 2015-04-20 2015-08-12 上海大族新能源科技有限公司 Preparation method and side edge laser isolation method for crystalline silicon solar cell
CN106299027A (en) * 2016-08-30 2017-01-04 浙江启鑫新能源科技股份有限公司 A kind of preparation method of N-type monocrystalline double-side cell
JP2019110185A (en) * 2017-12-18 2019-07-04 株式会社アルバック Manufacturing method of solar battery
CN107968127A (en) * 2017-12-19 2018-04-27 泰州中来光电科技有限公司 One kind passivation contact N-type solar cell and preparation method, component and system

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
于波 等: "n 型双面 TOPCon 太阳电池钝化技术", 《半导体制造技术》 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112768564A (en) * 2021-01-20 2021-05-07 东方日升(常州)新能源有限公司 Light injection passivation method of Topcon battery
CN112768564B (en) * 2021-01-20 2022-08-30 东方日升(常州)新能源有限公司 Light injection passivation method for Topcon battery
WO2023083418A1 (en) * 2021-11-11 2023-05-19 Hanwha Q Cells Gmbh Solar cell and method for the production of a solar cell

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Application publication date: 20200619