CN111312611B - Wafer bonding method, control unit and system - Google Patents
Wafer bonding method, control unit and system Download PDFInfo
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- CN111312611B CN111312611B CN201811512166.6A CN201811512166A CN111312611B CN 111312611 B CN111312611 B CN 111312611B CN 201811512166 A CN201811512166 A CN 201811512166A CN 111312611 B CN111312611 B CN 111312611B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Abstract
The application provides a wafer bonding method, before a first wafer and a second wafer are bonded together, a thimble loaded on a chuck can be moved, so that the thimble is positioned at the center position of the first wafer, therefore, in the bonding process of the first wafer and the second wafer, the action point of the thimble acting on the first wafer is the center position of the first wafer, and thus, the deformation quantity of the first wafer is symmetrical about the center of the first wafer, and the condition that the deformation quantity at the position symmetrical about the center of the wafer is different does not occur, thereby being beneficial to improving the wafer bonding alignment precision. In addition, because the action point of the thimble acting on the first wafer is the central position of the first wafer, the bonding wave is diffused from the center of the wafer to the edge of the wafer, so that the situation that the action forces at the central symmetrical positions of the wafer are different is avoided, and the torsion degree of the edge area of the wafer is not deteriorated. In addition, the application also provides a wafer bonding control unit and a wafer bonding control system.
Description
Technical Field
The present application relates to the field of integrated circuit manufacturing technologies, and in particular, to a wafer bonding method, a control unit, and a system.
Background
In the current integrated circuit manufacturing technology, in order to increase the integration of the chip, the wafer bonding process is a core technology.
In the wafer bonding process, the wafer bonding alignment accuracy and the bonding torsion degree are key parameters for representing the wafer bonding quality. The bonding torsion can represent the deformation quantity generated by the bonded wafer. Poor alignment precision of wafer bonding can seriously affect the back-end process of the process, even the connection of the circuit, and reduce the yield of the integrated circuit.
Therefore, it is a hot research focus in the industry to improve the wafer bonding alignment accuracy and bonding torsion during the wafer bonding process.
Disclosure of Invention
In view of the above, the present application provides a wafer bonding method, a control unit and a system to improve wafer bonding alignment accuracy and bonding torsion during wafer bonding.
In order to achieve the purpose of the invention, the following technical scheme is adopted in the application:
a first aspect of the present application provides a wafer bonding method, which includes:
acquiring the central position of a chuck of the chuck, wherein the chuck is used for transmitting a first wafer to be bonded;
acquiring the wafer center position of the first wafer after the first wafer is transferred onto the chuck;
calculating the offset between the central position of the chuck and the central position of the wafer;
when the offset is not within the allowable offset range, controlling the ejector pins loaded on the chuck to move to the center position of the wafer according to the offset;
and after a first wafer to be transmitted to the chuck is aligned with a second wafer to be bonded, controlling the ejector pin to outwards eject the first wafer transmitted to the chuck so as to realize bonding of the first wafer and the second wafer.
Optionally, the acquiring a chuck center position of the chuck specifically includes:
acquiring position information of at least three first position points on the same circumference concentric with the chuck;
and acquiring the chuck center position of the chuck according to the position information of the at least three first position points.
Optionally, the acquiring a chuck center position of the chuck specifically includes:
acquiring position information of at least three first marks arranged on the surface of the chuck and on the same circumference concentric with the chuck;
and acquiring the chuck center position of the chuck according to the position information of the at least three first marks.
Optionally, the same circumference concentric with the chuck is the circumference on which the chuck edge is located.
Optionally, the acquiring the wafer center position of the first wafer after the first wafer is transferred onto the chuck specifically includes:
acquiring position information of at least three second position points on the same circumference concentric with the first wafer;
and acquiring the wafer center position of the first wafer according to the position information of the at least three second position points.
Optionally, the acquiring the wafer center position of the first wafer after the first wafer is transferred onto the chuck specifically includes:
acquiring position information of at least three second marks which are arranged on the surface of the first wafer and are concentric with the first wafer on the same circumference;
and obtaining the wafer center position of the first wafer according to the position information of the at least three second marks.
Optionally, the same circumference concentric with the first wafer is a circumference where the edge of the first wafer is located.
A second aspect of the present application provides a wafer bonding control unit, which includes:
the wafer bonding device comprises a first acquisition unit, a second acquisition unit and a third acquisition unit, wherein the first acquisition unit is used for acquiring the central position of a chuck of the chuck, and the chuck is used for transmitting a first wafer to be bonded;
the second acquisition unit is used for acquiring the wafer center position of the first wafer after the first wafer is transferred onto the chuck;
the calculating unit is used for calculating the offset between the central position of the chuck and the central position of the wafer;
the first control unit is used for controlling the ejector pins loaded on the chuck to move to the center position of the wafer according to the offset when the offset is not within the allowable offset range;
and the second control unit is used for controlling the ejector pin to outwards eject the first wafer transferred onto the chuck after the first wafer to be transferred onto the chuck is aligned with the second wafer to be bonded so as to realize bonding of the first wafer and the second wafer.
Optionally, the first obtaining unit specifically includes:
a first acquiring subunit, configured to acquire position information of at least three first position points on the same circumference concentric with the chuck;
and the second acquisition subunit is used for acquiring the chuck center position of the chuck according to the position information of the at least three first position points.
Optionally, the first obtaining unit specifically includes:
a third acquiring subunit configured to acquire position information of at least three first marks provided on the chuck surface and on the same circumference concentric with the chuck;
and the fourth acquisition subunit is used for acquiring the chuck center position of the chuck according to the position information of the at least three first marks.
Optionally, the second obtaining unit specifically includes:
a fifth obtaining subunit, configured to obtain position information of at least three second position points on the same circumference concentric with the first wafer;
and the sixth acquiring subunit is configured to acquire the wafer center position of the first wafer according to the position information of the at least three second position points.
Optionally, the second obtaining unit specifically includes:
a seventh acquiring subunit, configured to acquire position information of at least three second marks that are arranged on the surface of the first wafer and on the same circumference concentric with the first wafer;
and the eighth acquiring subunit is configured to acquire the wafer center position of the first wafer according to the position information of the at least three second marks.
A third aspect of the present application provides a wafer bonding system, comprising: the device comprises a chuck, a bonding machine table, a wafer bonding control unit and a nanometer moving platform unit;
the nano mobile platform unit comprises a thimble capable of moving;
the chuck is used for transmitting a first wafer to be bonded;
the ejector pin is loaded at the central position of the chuck;
the bonding machine is used for bearing a second wafer to be bonded;
the wafer bonding control unit is the wafer bonding control unit according to any one of the above-mentioned second aspect;
and the nanometer moving platform unit is used for driving the ejector pin to move after receiving the control signal of the wafer bonding control unit so as to enable the ejector pin to move to the wafer center position of the first wafer.
Compared with the prior art, the method has the following beneficial effects:
based on the above technical solution, according to the wafer bonding method provided by the present application, before the first wafer and the second wafer are bonded together, the thimble loaded on the chuck can be moved, so that the thimble is located at the center position of the first wafer, and therefore, in the bonding process of the first wafer and the second wafer, an acting point of the thimble acting on the first wafer is the center position of the first wafer, so that the deformation amount of the first wafer is symmetric with respect to the center of the first wafer, and the situation that the deformation amount at the position symmetric with respect to the center of the wafer is different does not occur, thereby being beneficial to improving the wafer bonding alignment accuracy. In addition, because the action point of the thimble acting on the first wafer is the central position of the first wafer, the bonding wave is diffused from the center of the wafer to the edge of the wafer, so that the situation that the action forces at the central symmetrical positions of the wafer are different is avoided, and the torsion degree of the edge area of the wafer is not deteriorated.
Drawings
In order that the detailed description of the present application may be clearly understood, a brief description of the drawings, which will be used when describing the detailed description of the present application, follows.
FIG. 1 is a schematic view of wafer bonding under ideal conditions;
FIG. 2 is a schematic diagram of wafer bonding in an actual situation;
fig. 3 is a schematic structural diagram of a wafer bonding system according to an embodiment of the present disclosure;
FIG. 4 is a schematic structural diagram of a nano mobile platform unit provided in an embodiment of the present application;
fig. 5 is a schematic flowchart of a wafer bonding method according to an embodiment of the present disclosure;
fig. 6 is a schematic structural diagram of a wafer bonding control unit according to an embodiment of the present disclosure.
Detailed Description
In order to improve the wafer bonding alignment precision and the bonding torsion degree in the wafer bonding process, the conventional wafer bonding process is researched and analyzed.
Currently, the wafer bonding process is generally as follows: one wafer is held on the bonder table and the other wafer (which may be considered the top wafer) is transferred by the robot arm to the chuck and held by the chuck. After the two wafers are aligned, the thimble loaded in the center of the chuck jacks up the wafers outwards, so that the two wafers are bonded together. In an ideal situation, as shown in fig. 1, an acting point of the thimble acting on the upper wafer is a wafer center of the upper wafer, so that a wafer deformation amount and an acting force at a position symmetrical with respect to the upper wafer center are the same, and wafer bonding alignment accuracy and bonding torsion degree in a wafer bonding process can meet high requirements.
However, in an actual bonding process, when the upper wafer is transferred to the chuck by the robot arm, there is a possibility that the center of the upper wafer and the center of the chuck do not completely overlap each other but have a certain offset therebetween due to the transfer error. As shown in fig. 2, the action point of the thimble loaded at the center of the chuck acting on the upper wafer is not located at the center of the upper wafer, which may cause a certain wafer alignment error, and may result in that the alignment accuracy may not meet a high requirement.
Based on this, in order to improve the wafer bonding alignment accuracy and the bonding torsion degree in the wafer bonding process, the present application provides a wafer bonding method, which first acquires the chuck center position of the chuck and the wafer center position of the first wafer transferred onto the chuck before the first wafer and the second wafer are bonded together, then calculates the offset between the two center positions, and when the offset is not within the allowable offset range, can move the thimble loaded on the chuck according to the offset so as to make the thimble be located at the first wafer center position, so that, in the first wafer and the second wafer bonding process, the action point of the thimble on the first wafer is the first wafer center position, so the deformation amount of the first wafer is symmetrical with respect to the first wafer center, and the situation that the deformation amount at the positions symmetrical with respect to the wafer center is different does not occur, therefore, the wafer bonding alignment precision is improved. In addition, because the action point of the thimble on the first wafer is the center position of the first wafer, the bonding wave is diffused from the center of the wafer to the edge of the wafer, so that the situation that the action forces at the central symmetrical positions of the wafer are different does not occur, and the torsion degree of the edge area of the wafer is not deteriorated.
For the purpose of clearly understanding the embodiments of the present application, the detailed description of the embodiments of the present application will be given below with reference to the accompanying drawings.
First, a wafer bonding system for implementing the wafer bonding method provided in the embodiments of the present application is described. Referring to fig. 3, the wafer bonding system includes:
a chuck 31, a bonding machine table 32, a wafer bonding control unit 33 and a nanometer moving platform unit 34;
the nano moving platform unit 34 includes a movable thimble 340;
the chuck 31 is used for transferring a first wafer to be bonded;
the thimble 340 is loaded at the central position of the chuck 31;
the bonding machine 32 is used for carrying a second wafer to be bonded;
the wafer bonding control unit 33 is configured to obtain a chuck center position of the chuck 31; acquiring the wafer center position of the first wafer after the first wafer is transferred onto the chuck 31; calculating the offset between the central position of the chuck and the central position of the wafer; when the offset is not within the allowable offset range, controlling the ejector pins 340 loaded on the chuck 31 to move to the wafer center position according to the offset; after a first wafer to be transferred onto the chuck 31 is aligned with a second wafer to be bonded, controlling the ejector pins 340 to eject the first wafer transferred onto the chuck 31 outwards so as to bond the first wafer and the second wafer;
the nano moving platform unit 34 is configured to drive the thimble 340 to move after receiving the control signal from the wafer bonding control unit 33, so that the thimble 340 moves to the wafer center position of the first wafer.
As a specific example, the structure of the nano-moving platform unit 34 may be as shown in fig. 4, which includes a permanent magnet 341, a coil plate 342, a guide 343, a slider 344 and a thimble unit 345,
the thimble unit 345 includes a cylinder 3451 and a thimble 340. Wherein the slider 344 is movable on the guide 343.
The working principle of the wafer bonding system is as follows:
when the wafer bonding control unit 33 acquires the chuck center position of the chuck and the wafer center position of the first wafer transferred onto the chuck, the wafer bonding control unit 33 calculates an offset between the two center positions, and when the offset is not within the allowable offset range, the wafer bonding control unit 33 controls the controller of the electromagnetic motor to supply power to the coil plate 342 of the electromagnetic motor, and the coil plate 342 moves forward in the magnetic field formed by the permanent magnet 341 as a cutting magnetic induction line, and moves together with the slider 344 and the ejector pin unit 345 by the movement of the coil plate 342. The specific moving distance can be read by a grating ruler on the nano moving platform unit 34 and fed back to the wafer bonding control unit 33, then the wafer bonding control unit 33 determines whether the thimble moves to the target position according to the received moving distance, if the thimble moves to the target position, the wafer bonding control unit 33 controls the nano moving platform unit 34 to stop moving, and if the thimble does not move to the target position, the wafer bonding control unit 33 continues to control the nano moving platform unit 34 to move until the thimble moves to the target position, that is, the center position of the first wafer.
Based on the wafer bonding system, referring to fig. 5, a wafer bonding method provided in an embodiment of the present application includes the following steps:
s501: the wafer bonding control unit acquires a chuck center position of a chuck, and the chuck is used for transmitting a first wafer to be bonded.
In order to easily acquire the chuck center position of the chuck, the lower lens on the bonding machine table can be used for realizing the purpose. As an example, S501 may specifically be:
a1: the wafer bonding control unit acquires position information of three first position points on the same circumference concentric with the chuck.
It should be noted that, since three points that are not on the same straight line may determine the circumference and the center of the three points, in this embodiment of the present application, the center of the chuck may be obtained by using three position points that are located on the same circumference concentric with the chuck.
As an example, for simplicity, the circumference concentric with the chuck may be the circumference at which the chuck edge is located. Accordingly, a1 may specifically be: the wafer bonding control unit obtains position information of three first position points on the edge of the chuck.
As a more specific example, a1 may be embodied as: the wafer bonding control unit acquires position information of three first position points on the edge of the chuck by using a lower lens arranged on a bonding machine.
As a more specific example, a rectangular coordinate system may be constructed in advance on the plane on which the chuck is located, and thus, the position information of the first position point may be represented by position coordinates, and as an example, the three first position points are respectively represented as coordinate points (x) 11 ，y 11 )、(x 12 ，y 12 ) And (x) 13 ，y 13 )。
A2: and the wafer bonding control unit acquires the chuck center position of the chuck according to the position information of the three first position points.
The three first position points are positioned on the same circumference, and the circumference is an arc line instead of a straight line, so the three first position points are not positioned on the same straight line, the circle center of the circumference where the three first position points are positioned can be obtained according to the position information of the three first position points, and the circle center of the circumference where the three first position points are positioned is the chuck center position of the chuck because the circumference where the three first position points are positioned is concentric with the chuck.
It should be noted that the acquired chuck center position may be a coordinate point, which may be represented as O as an example 1 (x 1 ，y 1 )。
In the above example, three first position points are described as an example, and actually, the chuck center position of the chuck may be acquired by using 4, 5, or more first position points.
When the surface of the chuck is provided with the marks on the same circumference in advance, as another example, S501 may specifically include the following steps:
b1: a wafer bonding control unit acquires position information of three first marks arranged on the surface of the chuck and on the same circumference concentric with the chuck.
For ease of placement, the first indicia may be disposed on the circumference of the chuck at the edge thereof.
Accordingly, B1 may be embodied as: the wafer bonding control unit acquires position information of three first marks arranged on the surface of the chuck and positioned on the edge of the chuck.
More specifically, B1 may be: the wafer bonding control unit acquires position information of three first marks arranged on the surface of the chuck and positioned on the edge of the chuck by using a lower lens arranged on a bonding machine table.
B2: and the wafer bonding control unit acquires the central position of the chuck according to the position information of the three first marks.
The three first marks are positioned on the same circumference, and the circumference is an arc line instead of a straight line, so that the three first marks are not positioned on the same straight line, the circle center of the circumference where the three first marks are positioned can be obtained according to the position information of the three first marks, and the circle center of the circumference where the three first marks are positioned is the chuck center position of the chuck because the circumference where the three first marks are positioned is concentric with the chuck.
In the above example, the positional information of three first marks is taken as an example, and actually, the chuck center position of the chuck may be acquired by using the positional information of 4, 5, or more first marks.
S502: after the first wafer is transferred onto the chuck, the wafer bonding control unit acquires a wafer center position of the first wafer.
In order to easily acquire the wafer center position of the first wafer, the lower lens on the bonding machine can be used for realizing the purpose. As an example, S502 may specifically include the following steps:
c1: and the wafer bonding control unit acquires three second position point coordinates on the same circumference concentric with the first wafer.
It should be noted that, because three points that are not on the same straight line may determine the circumference and the center of the three points, in this embodiment of the present application, the center of the first wafer may be obtained by using three position points that are on the same circumference concentric with the first wafer.
As an example, for simplicity, the circumference concentric with the first wafer may be the circumference at which the edge of the first wafer is located. Accordingly, C1 may be specifically: the wafer bonding control unit acquires position information of three second position points on the edge of the first wafer.
As a more specific example, C1 may be embodied as: the wafer bonding control unit acquires position information of three second position points on the edge of the first wafer by using a lower lens arranged on a bonding machine.
As a more specific example, a rectangular coordinate system may be constructed in advance on the plane where the first wafer is located, and thus, the position information of the second position point may be represented by position coordinates, and as an example, the three second position points are respectively represented as coordinate points (x) 21 ，y 21 )、(x 22 ，y 22 ) And (x) 23 ，y 23 )。
C2: and the wafer bonding control unit acquires the wafer center position of the first wafer according to the three second position point coordinates.
The three second position points are located on the same circle, and the circle is an arc line instead of a straight line, so that the three second position points are not located on the same straight line, the circle center of the circle where the three second position points are located can be obtained according to the position information of the three second position points, and the circle center of the circle where the three second position points are located is the center position of the first wafer because the circle where the three second position points are located is concentric with the first wafer.
It should be noted that the obtained first wafer center position may be a coordinate point, which may be represented as O as an example 2 (x 2 ，y 2 )。
In addition, in the above example, three second position points are taken as an example for explanation, and actually, the first wafer center position of the first wafer may be acquired by using 4, 5, or more second position points.
In addition, when the first wafer surface is provided with a mark on the same circumference in advance, as another example, S502 may specifically include the following steps:
d1: the wafer bonding control unit acquires three second marks which are arranged on the surface of the first wafer and on the same circumference concentric with the first wafer.
For convenience of arrangement, the second mark may be arranged on a circumference where the edge of the first wafer is located.
Accordingly, B1 may be embodied as: and acquiring the position information of three second marks which are arranged on the surface of the first wafer and positioned on the edge of the first wafer.
More specifically, B1 may be: and acquiring the position information of three second marks which are arranged on the surface of the first wafer and are positioned on the edge of the first wafer by using a lower lens arranged on a bonding machine table.
D2: and the wafer bonding control unit acquires the wafer center position of the first wafer according to the three second marks.
The three second marks are positioned on the same circumference, and the circumference is an arc line instead of a straight line, so that the three second marks are not positioned on the same straight line, the circle center of the circumference where the three second marks are positioned can be obtained according to the position information of the three second marks, and the circle center of the obtained circumference is the center position of the first wafer because the circumference where the three second marks are positioned is concentric with the first wafer.
In the above example, the position information of three second marks is taken as an example for explanation, and actually, the first wafer center position of the first wafer may also be acquired by using the position information of 4, 5, or more second marks.
S503: the wafer bonding control unit calculates the offset between the chuck center position and the wafer center position.
When the central position of the chuck and the central position of the wafer are both represented by coordinate points in a rectangular coordinate system, and the rectangular coordinate systems of the chuck and the wafer are the same coordinate system, the method comprises the following steps:
calculating the offset X of the central position of the chuck and the central position of the wafer in the X-axis direction d And calculating the offset Y between the central position of the chuck and the central position of the wafer in the Y-axis direction d 。
S504: when the offset is not within the allowable offset range, the wafer bonding control unit controls the ejector pins loaded on the chuck to move to the center position of the wafer according to the offset.
It should be noted that, in order to ensure the alignment accuracy of wafer bonding, an allowable offset range between the chuck center and the first wafer center is preset. Typically, the allowable offset range includes the X-axis direction X d0 And the allowable offset range Y in the Y-axis direction d0 . More specifically, in general, X d0 ＝0，Y d0 ＝0。
Thus, S504 may specifically be:
when the offset X between the central position of the chuck and the central position of the wafer in the X-axis direction d Allowable offset range X out of the X-axis direction d0 The wafer bonding control unit is based on X d And X d0 The difference value of the first and second control signals is used for controlling the thimble loaded on the chuck to move to the central position of the wafer.
When the central position of the chuck and the central position of the wafer have an offset Y in the Y-axis direction d Allowable offset range Y not in Y-axis direction d0 When is in accordance with Y d And Y d0 The difference value of the first and second control signals is used for controlling the thimble loaded on the chuck to move to the central position of the wafer.
S505: after a first wafer to be transmitted to the chuck is aligned with a second wafer to be bonded, the wafer bonding control unit controls the ejector pins to eject outwards to the first wafer transmitted to the chuck, so that bonding of the first wafer and the second wafer is achieved.
The step may specifically be: by adopting a wafer bonding process which is commonly used in the field, after a first wafer to be transferred onto a chuck is aligned with a second wafer placed on a bonding machine, the ejector pins are controlled to eject outwards to transfer the first wafer onto the chuck, so that the first wafer and the second wafer are bonded.
It should be noted that after the wafer bonding is completed, the ejector pin can be restored to the center of the chuck as needed.
In the specific implementation manner of the wafer bonding method provided by the embodiment of the present application, before the first wafer and the second wafer are bonded together, the thimble loaded on the chuck can be moved, so that the thimble is located at the center position of the first wafer, and therefore, in the bonding process of the first wafer and the second wafer, an action point of the thimble acting on the first wafer is the center position of the first wafer, so that the deformation amount of the first wafer is symmetric with respect to the center of the first wafer, and the situation that the deformation amounts at positions symmetric with respect to the center of the wafer are different does not occur, thereby being beneficial to improving the wafer bonding alignment accuracy. In addition, because the action point of the thimble acting on the first wafer is the central position of the first wafer, the bonding wave is diffused from the center of the wafer to the edge of the wafer, so that the situation that the action forces at the central symmetrical positions of the wafer are different is avoided, and the torsion degree of the edge area of the wafer is not deteriorated.
Based on the wafer bonding method provided by the above embodiment, the present application also provides a specific implementation manner of the wafer bonding control unit.
Referring to fig. 6, a wafer bonding control unit according to an embodiment of the present disclosure includes:
a first obtaining unit 61 configured to obtain a chuck center position of a chuck, the chuck being configured to transfer a first wafer to be bonded;
a second obtaining unit 62, configured to obtain a wafer center position of the first wafer after the first wafer is transferred onto the chuck;
a calculating unit 63 for calculating an offset between a center position of the chuck and a center position of the wafer;
a first control unit 64 for controlling the ejector pins loaded on the chuck to move to the center of the wafer according to the offset when the offset is not within the allowable offset range;
and the second control unit 65 is used for controlling the ejector pins to eject the first wafer transferred onto the chuck outwards after the first wafer to be transferred onto the chuck is aligned with the second wafer to be bonded, so as to bond the first wafer and the second wafer.
Based on the wafer bonding control unit, before the first wafer and the second wafer are bonded together, the ejector pin loaded on the chuck can be moved, so that the ejector pin is located at the center position of the first wafer, therefore, in the bonding process of the first wafer and the second wafer, the action point of the ejector pin on the first wafer is the center position of the first wafer, and thus, the deformation amount of the first wafer is symmetrical about the center of the first wafer, and the condition that the deformation amount at the position symmetrical about the center of the wafer is different does not occur, so that the wafer bonding alignment accuracy is favorably improved. In addition, because the action point of the thimble on the first wafer is the center position of the first wafer, the bonding wave is diffused from the center of the wafer to the edge of the wafer, so that the situation that the action forces at the central symmetrical positions of the wafer are different does not occur, and the torsion degree of the edge area of the wafer is not deteriorated.
As a specific implementation manner of the present application, in order to be able to simply acquire the chuck center position of the chuck, the first acquiring unit 61 may specifically include:
a first acquiring subunit, configured to acquire position information of at least three first position points on the same circumference concentric with the chuck;
and the second acquisition subunit is used for acquiring the chuck center position of the chuck according to the position information of the at least three first position points.
As another specific implementation manner of the present application, when the marks located on the same circumference are preset on the chuck surface, the first obtaining unit 61 may also specifically include:
a third acquiring subunit configured to acquire position information of at least three first marks provided on the surface of the chuck and on the same circumference concentric with the chuck;
and the fourth acquisition subunit is used for acquiring the chuck center position of the chuck according to the position information of the at least three first marks.
As another specific implementation manner of the present application, in order to simply acquire the wafer center position of the first wafer, the second acquiring unit 62 may specifically include:
the fifth acquiring subunit is used for acquiring at least three second position point coordinates on the same circumference concentric with the first wafer;
and the sixth acquiring subunit is configured to acquire the wafer center position of the first wafer according to the at least three second position point coordinates.
As another specific implementation manner of the present application, when the first wafer surface is provided with a mark on the same circumference in advance, the second obtaining unit 62 may also specifically include:
a seventh acquiring subunit, configured to acquire at least three second marks that are arranged on the surface of the first wafer and on the same circumference that is concentric with the first wafer;
and the eighth acquiring subunit is used for acquiring the wafer center position of the first wafer according to the at least three second marks.
The above is a specific implementation manner of the embodiment of the present application.
Claims (13)
1. A wafer bonding method, comprising:
acquiring the central position of a chuck of the chuck, wherein the chuck is used for transmitting a first wafer to be bonded;
after the first wafer is transferred onto the chuck, acquiring the wafer center position of the first wafer;
calculating the offset between the central position of the chuck and the central position of the wafer;
when the offset is not within the allowable offset range, controlling the ejector pins loaded on the chuck to move to the center position of the wafer according to the offset;
and after a first wafer to be transmitted to the chuck is aligned with a second wafer to be bonded, controlling the ejector pin to outwards eject the first wafer transmitted to the chuck so as to realize bonding of the first wafer and the second wafer.
2. The method according to claim 1, wherein the obtaining the chuck center position of the chuck specifically comprises:
acquiring position information of at least three first position points on the same circumference concentric with the chuck;
and acquiring the chuck center position of the chuck according to the position information of the at least three first position points.
3. The method according to claim 1, wherein the obtaining the chuck center position of the chuck specifically comprises:
acquiring position information of at least three first marks arranged on the surface of the chuck and on the same circumference concentric with the chuck;
and acquiring the chuck center position of the chuck according to the position information of the at least three first marks.
4. A method according to claim 2 or 3, wherein the same circumference concentric with the chuck is the circumference on which the chuck rim is located.
5. The method as claimed in any one of claims 1 to 4, wherein said obtaining the wafer center position of the first wafer after the first wafer is transferred onto the chuck comprises:
acquiring position information of at least three second position points on the same circle concentric with the first wafer;
and acquiring the wafer center position of the first wafer according to the position information of the at least three second position points.
6. The method as claimed in any one of claims 1 to 4, wherein said obtaining the wafer center position of the first wafer after the first wafer is transferred onto the chuck comprises:
acquiring position information of at least three second marks which are arranged on the surface of the first wafer and are concentric with the first wafer on the same circumference;
and acquiring the wafer center position of the first wafer according to the position information of the at least three second marks.
7. The method of claim 5 or 6, wherein the same circumference concentric with the first wafer is a circumference at which the first wafer edge is located.
8. A wafer bonding control unit, comprising:
the first acquiring unit is used for acquiring the central position of a chuck of the chuck, and the chuck is used for transmitting a first wafer to be bonded;
the second acquisition unit is used for acquiring the wafer center position of the first wafer after the first wafer is transferred onto the chuck;
the calculating unit is used for calculating the offset between the central position of the chuck and the central position of the wafer;
the first control unit is used for controlling the ejector pins loaded on the chuck to move to the center position of the wafer according to the offset when the offset is not within the allowable offset range;
and the second control unit is used for controlling the ejector pin to outwards eject the first wafer transmitted to the chuck after the first wafer to be transmitted to the chuck is aligned with the second wafer to be bonded so as to realize bonding of the first wafer and the second wafer.
9. The control unit according to claim 8, wherein the first obtaining unit specifically includes:
a first acquiring subunit, configured to acquire position information of at least three first position points on the same circumference concentric with the chuck;
and the second acquisition subunit is used for acquiring the chuck center position of the chuck according to the position information of the at least three first position points.
10. The control unit according to claim 8, wherein the first obtaining unit specifically includes:
a third acquiring subunit configured to acquire position information of at least three first marks provided on the chuck surface and on the same circumference concentric with the chuck;
and the fourth acquisition subunit is used for acquiring the chuck center position of the chuck according to the position information of the at least three first marks.
11. The control unit according to any one of claims 8 to 10, wherein the second obtaining unit specifically includes:
a fifth obtaining subunit, configured to obtain position information of at least three second position points on the same circumference concentric with the first wafer;
and the sixth acquiring subunit is configured to acquire the wafer center position of the first wafer according to the position information of the at least three second position points.
12. The control unit according to any one of claims 8 to 10, wherein the second obtaining unit specifically includes:
a seventh obtaining subunit, configured to obtain position information of at least three second marks that are arranged on the surface of the first wafer and on the same circumference that is concentric with the first wafer;
and the eighth acquiring subunit is configured to acquire the wafer center position of the first wafer according to the position information of the at least three second marks.
13. A wafer bonding system, comprising: the device comprises a chuck, a bonding machine table, a wafer bonding control unit and a nanometer moving platform unit;
the nano mobile platform unit comprises a thimble capable of moving;
the chuck is used for transmitting a first wafer to be bonded;
the thimble is loaded at the central position of the chuck;
the bonding machine is used for bearing a second wafer to be bonded;
the wafer bonding control unit is the wafer bonding control unit of any one of claims 8-12;
and the nano mobile platform unit is used for driving the thimble to move after receiving the control signal of the wafer bonding control unit so as to enable the thimble to move to the wafer center position of the first wafer.
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