CN111304638A - CVD equipment - Google Patents
CVD equipment Download PDFInfo
- Publication number
- CN111304638A CN111304638A CN201911232135.XA CN201911232135A CN111304638A CN 111304638 A CN111304638 A CN 111304638A CN 201911232135 A CN201911232135 A CN 201911232135A CN 111304638 A CN111304638 A CN 111304638A
- Authority
- CN
- China
- Prior art keywords
- plate
- radio frequency
- cover plate
- upper cover
- assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 239000007921 spray Substances 0.000 claims abstract description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 22
- 238000005086 pumping Methods 0.000 claims description 22
- 229910052802 copper Inorganic materials 0.000 claims description 21
- 239000010949 copper Substances 0.000 claims description 21
- 239000000919 ceramic Substances 0.000 claims description 10
- 238000005507 spraying Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 15
- 230000001133 acceleration Effects 0.000 abstract description 10
- 239000007789 gas Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 12
- 238000000151 deposition Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000000605 extraction Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
Abstract
The invention belongs to the technical field of chemical vapor deposition, and particularly relates to CVD equipment which comprises a radio frequency assembly and a reaction chamber assembly, wherein the radio frequency assembly comprises a radio frequency generator and a radio frequency converter, the reaction chamber assembly comprises an upper cover plate and a lower cavity, an upper vent hole penetrates through the upper cover plate, the lower cavity is provided with a lower air outlet, a spray plate and a heating plate are arranged in a chamber formed by the upper cover plate and the lower cavity, and the radio frequency assembly is electrically connected with the spray plate and the heating plate respectively. The CVD equipment provided by the invention is provided with the radio frequency converter, the upper cover plate is provided with the upper vent hole, the lower cavity is provided with the lower air outlet, the radio frequency converter is controlled to carry out electrode conversion after the film is formed, the acceleration direction of the plasma is changed, and the upper vent hole of the upper cover plate is controlled to be opened so as to pump away the redundant plasma, thereby reducing the probability that the redundant plasma falls on the film and improving the quality of the film.
Description
Technical Field
The invention belongs to the technical field of Chemical Vapor Deposition (CVD), and particularly relates to CVD equipment.
Background
Currently, CVD equipment is widely used in the field of semiconductor integrated circuit manufacturing. In some thin film processing, plasma is used to assist the processing. With the increasing requirements of chips on the process yield and cleanliness of equipment, the requirements on the radio frequency control technology and the equipment structure also need to be gradually optimized.
In the current process of ionizing the chemical source by using radio frequency, at the end stage of the reaction process, the supply of the chemical source and the output of the radio frequency are required to be closed, although the process can be controlled to be closed instantly, a part of redundant plasma of the chemical source still deposits on the film of the wafer, and the thickness uniformity of the film is influenced.
Disclosure of Invention
The invention aims to provide CVD equipment, which solves the problem that the existing equipment has the defect that the thickness uniformity of a thin film is influenced because redundant plasma is deposited on the thin film in the thin film preparation process.
The technical scheme adopted by the invention for solving the technical problems is as follows: the utility model provides a CVD equipment, includes radio frequency assembly and reaction chamber subassembly, wherein, the radio frequency assembly includes radio frequency generator and radio frequency converter, the reaction chamber subassembly includes upper cover plate and lower cavity, it has last exhaust hole to run through on the upper cover plate, the cavity is provided with down the gas outlet down, be provided with spray plate and heating plate in the cavity that upper cover plate and lower cavity constitute, the radio frequency assembly respectively with spray plate and heating plate electricity be connected.
Further preferred embodiments of the present invention are: the reaction chamber assembly further comprises an upper air exhaust assembly, the upper air exhaust assembly comprises an air exhaust ring and an upper air exhaust opening arranged at the upper end of the air exhaust ring, and the air exhaust ring is arranged at the upper end of the upper air exhaust opening.
Further preferred embodiments of the present invention are: the radio frequency assembly further comprises an upper copper strip and a lower copper strip, and the radio frequency assembly is electrically connected with the spraying plate through the upper copper strip and is electrically connected with the heating plate through the lower copper strip.
Further preferred embodiments of the present invention are: the upper end of the spraying plate is also provided with an air inlet plate, the air inlet plate is provided with an air inlet, and the upper copper strip is connected with the air inlet plate.
Further preferred embodiments of the present invention are: the upper vent hole is provided with a plurality of holes, and the upper vent hole is annularly arranged on the upper cover plate.
Further preferred embodiments of the present invention are: the upper vent hole is obliquely arranged.
Further preferred embodiments of the present invention are: the inner side of the upper cover plate is provided with a concave step, the spray plate is provided with a boss matched with the concave step, and the spray plate is arranged on the concave step of the upper cover plate.
Further preferred embodiments of the present invention are: the heating plate below is provided with the ceramic plate, the ceramic plate is hollow circular cylinder, and the ceramic plate sets up in the cavity of resorption internally, is provided with down the exhaust hole on the ceramic plate.
The invention has the beneficial effects that:
the CVD equipment provided by the invention is provided with the radio frequency converter, the upper cover plate is provided with the exhaust hole, the lower cavity is provided with the air outlet, the radio frequency converter is controlled to carry out electrode conversion after the film is formed, the acceleration direction of the plasma is changed, and the exhaust hole of the upper cover plate is controlled to be opened to pump away the redundant plasma, so that the probability that the redundant plasma falls on the film is reduced, and the film quality is improved.
Drawings
The invention will be further described with reference to the accompanying drawings and examples, in which:
FIG. 1 is a sectional view of a CVD apparatus of the present invention;
FIG. 2 is a schematic structural view of a CVD apparatus according to the present invention;
FIG. 3 is an exploded schematic view of a reaction chamber assembly of the present invention;
FIG. 4 is a schematic view of the ion acceleration direction and gas flow direction during deposition according to the present invention;
FIG. 5 is a schematic view of the ion acceleration direction and gas flow direction after the deposition of the present invention is completed;
the reference numbers in the figures are:
a radio frequency generator 10; a radio frequency converter 11; a cable 12; feeding a copper strip 13; a lower copper strip 14; a reaction chamber assembly 2; an upper cover plate 21; an upper vent hole 211; a lower cavity 22; a lower pumping port 221; a shower plate 3; an air intake plate 4; an air inlet 41; a heating plate 5; an upper air exhaust assembly 6; an upper pumping port 61; an air extraction ring 62; a ceramic plate 7; and a lower vent hole 71.
Detailed Description
The preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings.
As shown in fig. 1 to 3, the present invention provides a CVD apparatus for ionizing a chemical reaction source into plasma and then depositing the plasma into a thin film for use in semiconductor integrated circuit fabrication. The CVD equipment comprises a radio frequency assembly and a reaction chamber assembly 2, wherein the radio frequency assembly is used for providing power and comprises a radio frequency generator 10 and a radio frequency converter 11, and the radio frequency generator 10 and the radio frequency converter 11 are connected through a cable; the reaction chamber component 2 comprises an upper cover plate 21 and a lower chamber 22, the upper cover plate 21 and the lower cover plate form a vacuum chamber for providing a vapor deposition place, an upper vent hole 211 penetrates through the upper cover plate 21, the lower chamber 22 is provided with a lower air outlet 221, a spray plate 3 and a heating plate 5 are arranged in the chamber formed by the upper cover plate 21 and the lower chamber 22, and the radio frequency component is respectively electrically connected with the spray plate 3 and the heating plate 5to form different electrodes. The CVD equipment provided by the invention is provided with the radio frequency converter 11, the upper cover plate 21 is provided with the upper exhaust hole 211, the lower cavity 22 is provided with the lower air outlet 221, the radio frequency converter 11 is controlled to carry out electrode conversion after the film is formed, the acceleration direction of ions is changed, and the upper exhaust hole 211 of the upper cover plate 21 is controlled to be opened to pump away redundant plasma, so that the probability that redundant ions fall onto the film is reduced, and the quality of the film is improved.
In connection with fig. 1, in particular, for the rf assembly, an rf transducer 11 is provided, which can switch electrodes, changing the ion acceleration direction. In this embodiment, the cable is a copper cable, the rf module further includes an upper copper strip 13 and a lower copper strip 14, and the rf module is connected to the shower plate 3 through the upper copper strip 13 and is electrically connected to the heating plate 5 through the lower copper strip 14. Good electrical conductivity can be ensured by copper wire cables and copper tapes, and other conductive materials can be used in other embodiments.
Referring to fig. 2-3, for the reaction chamber assembly 2, in this embodiment, the reaction chamber assembly 2 further includes an upper pumping assembly 6, the upper pumping assembly 6 includes a pumping ring 62 and an upper pumping hole 61 disposed at an upper end of the pumping ring 62, the pumping ring 62 is disposed at an upper end of the upper pumping hole 211, and the upper pumping assembly is provided with a control valve (not shown). The upper end of the upper vent hole 211 of the upper cover plate 21 is connected to the exhaust ring 62, the lower end of the upper vent hole is connected to the chamber, and the upper vent hole 211 is used for pumping redundant plasma from the chamber to the exhaust ring 62 and then discharging the redundant plasma, the upper vent hole 211 is provided with a plurality of holes, the upper cover plate 21 is arranged annularly, and the exhaust ring 62 corresponds to the position of the upper vent hole 211. In this embodiment, the upper vent holes 211 are disposed obliquely.
In this embodiment, the inner side of the upper cover plate 21 is provided with a concave step, the spray plate 3 is provided with a boss matched with the concave step, and the spray plate 3 is arranged on the concave step of the upper cover plate 21 to ensure the compact structure. The upper end of the spray plate 3 is provided with an air inlet plate 4, the air inlet plate 4 is provided with an air inlet 41 for air inlet of a chemical reaction source, and an upper copper belt 13 of the radio frequency assembly is directly electrically connected with the air inlet plate 4 and is transmitted to the spray plate 3 through the air inlet plate 4.
Further, a ceramic plate 7 is arranged below the heating plate 5, the ceramic plate 7 is in a hollow cylindrical shape and comprises a circular ring and a cylindrical body part, a lower exhaust hole 71 is formed in the circular ring of the ceramic plate 7, and the cylindrical body part is arranged in the lower cavity 22, so that a gap is reserved between the circular ring part and a bottom plate of the lower cavity 22, and the plasma is guaranteed to flow out.
The method of using the CVD apparatus according to the present invention is described with reference to FIGS. 4 and 5, in which FIG. 4 is a schematic view showing the direction of ion acceleration and the direction of gas flow during the deposition according to the present invention; FIG. 5 is a schematic view of the ion acceleration direction and gas flow direction after the deposition of the present invention is completed;
referring to fig. 4, specifically, the source gases of the reaction are: silane and ammonia, and the technological parameters in the preparation process are as follows: the using temperature is 350 ℃, the total flow of the source gas for reaction is 15000sccm, the process time is 10 minutes, and the pressure in the cavity is 5 torr; the radio frequency starting time is 9 minutes;
the indexes of the prepared film are as follows: the thickness of the silicon nitride film is 3000 nanometers.
And (3) the reaction source gas enters the chamber through the gas inlet 41 on the gas inlet plate 4, the radio frequency generator 10 is started, the upper copper strip 13 and the lower copper strip 14 act on the two motors of the spray plate 3 and the heating plate 5, the reaction source gas is ionized into an ion state, and the ion state bombards the substrate of the heating plate to start to deposit a film. At the moment, the ion acceleration direction is directed to the heating plate from the spray plate 3, and redundant gas uniformly flows out through the lower exhaust port and the lower extraction port of the ceramic plate 7.
As shown in fig. 5, after 9 minutes, the deposition is finished, at this time, the film reaches the thickness of the process index, the source gas is turned off, the rf converter 11 is controlled to exchange the rf input and the loop, so that the electrical properties of the two electrodes in the chamber are changed, the ion acceleration direction is changed to be directed to the spray plate 3 by the heating plate, at this time, the upper pumping assembly 6 is turned on to start working, and a part of the gas and the ions enter the pumping ring 62 through the upper exhaust port under the action of the pumping ring 62, and are pumped away through the upper pumping port 61.
After the time lasts for 1 minute, the upper air exhaust assembly 6 and the radio frequency assembly are closed, the extraction of redundant plasma is completed, and a thin film with uniform thickness is formed.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
Claims (8)
1. The utility model provides a CVD equipment, its characterized in that, includes radio frequency assembly and reaction chamber subassembly, wherein, the radio frequency assembly includes radio frequency generator and radio frequency converter, the reaction chamber subassembly includes upper cover plate and lower cavity, it has last exhaust hole to run through on the upper cover plate, the cavity is provided with down the gas outlet down, be provided with spray plate and heating plate in the cavity that upper cover plate and lower cavity constitute, the radio frequency assembly respectively with spray plate and heating plate electricity be connected.
2. The CVD apparatus of claim 1, wherein the reaction chamber assembly further comprises an upper pumping assembly, the upper pumping assembly comprises a pumping ring and an upper pumping hole disposed at an upper end of the pumping ring, and the pumping ring is disposed at an upper end of the upper pumping hole.
3. The CVD apparatus of claim 2, wherein the rf assembly further comprises an upper copper strip and a lower copper strip, the rf assembly being electrically connected to the shower plate via the upper copper strip and to the heater plate via the lower copper strip.
4. The CVD equipment according to claim 3, wherein an air inlet plate is further arranged at the upper end of the spraying plate, an air inlet is arranged on the air inlet plate, and the upper copper strip is connected with the air inlet plate.
5. The CVD apparatus according to claim 4, wherein a plurality of upper vent holes are provided, and the upper vent holes are provided in a ring shape on the upper cover plate.
6. The CVD apparatus according to claim 5, wherein the upper vent holes are arranged obliquely.
7. The CVD apparatus according to claim 1 or 6, wherein a recessed step is provided on an inner side of the upper cover plate, the shower plate is provided with a projection which fits the recessed step, and the shower plate is placed on the recessed step of the upper cover plate.
8. The CVD apparatus according to claim 7, wherein a ceramic plate having a hollow cylindrical shape is provided below the heating plate, and a lower exhaust hole is provided in the lower chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911232135.XA CN111304638B (en) | 2019-12-05 | 2019-12-05 | CVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911232135.XA CN111304638B (en) | 2019-12-05 | 2019-12-05 | CVD equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111304638A true CN111304638A (en) | 2020-06-19 |
| CN111304638B CN111304638B (en) | 2022-03-18 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911232135.XA Active CN111304638B (en) | 2019-12-05 | 2019-12-05 | CVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111304638B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113136567A (en) * | 2021-03-12 | 2021-07-20 | 拓荆科技股份有限公司 | Thin film deposition device and method for improving uniformity of cavity airflow |
| CN116623141A (en) * | 2023-07-20 | 2023-08-22 | 江苏微镀新能源科技有限公司 | PVD vacuum ion jet coating machine |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080236492A1 (en) * | 2007-03-27 | 2008-10-02 | Tokyo Electron Limited | Plasma processing apparatus |
| US20090203198A1 (en) * | 2008-02-12 | 2009-08-13 | Samsung Electronics Co., Ltd. | Semiconductor manufacturing apparatus and semiconductor manufacturing method using the same |
| CN103811263A (en) * | 2014-02-25 | 2014-05-21 | 清华大学 | Plasma confinement device and plasma processing device provided with plasma confinement device |
-
2019
- 2019-12-05 CN CN201911232135.XA patent/CN111304638B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080236492A1 (en) * | 2007-03-27 | 2008-10-02 | Tokyo Electron Limited | Plasma processing apparatus |
| US20090203198A1 (en) * | 2008-02-12 | 2009-08-13 | Samsung Electronics Co., Ltd. | Semiconductor manufacturing apparatus and semiconductor manufacturing method using the same |
| CN103811263A (en) * | 2014-02-25 | 2014-05-21 | 清华大学 | Plasma confinement device and plasma processing device provided with plasma confinement device |
Non-Patent Citations (1)
| Title |
|---|
| 魏明山: "《无线电测控技术基础》", 30 September 2015, 国防工业出版社 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113136567A (en) * | 2021-03-12 | 2021-07-20 | 拓荆科技股份有限公司 | Thin film deposition device and method for improving uniformity of cavity airflow |
| CN116623141A (en) * | 2023-07-20 | 2023-08-22 | 江苏微镀新能源科技有限公司 | PVD vacuum ion jet coating machine |
| CN116623141B (en) * | 2023-07-20 | 2023-10-13 | 江苏微镀新能源科技有限公司 | PVD vacuum ion jet coating machine |
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| Publication number | Publication date |
|---|---|
| CN111304638B (en) | 2022-03-18 |
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Address after: 518000 unit 1b-1, building A6, Guangming Science Park, China Merchants Group, Fenghuang street, Guangming District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Nashe Intelligent Equipment Co.,Ltd. Address before: 518000 unit 1b-1, building A6, Guangming Science Park, China Merchants Group, Fenghuang street, Guangming District, Shenzhen City, Guangdong Province Patentee before: Shenzhen Nashi Intelligent Equipment Co.,Ltd. |