CN103811263A - Plasma confinement device and plasma processing device provided with plasma confinement device - Google Patents
Plasma confinement device and plasma processing device provided with plasma confinement device Download PDFInfo
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- CN103811263A CN103811263A CN201410065214.7A CN201410065214A CN103811263A CN 103811263 A CN103811263 A CN 103811263A CN 201410065214 A CN201410065214 A CN 201410065214A CN 103811263 A CN103811263 A CN 103811263A
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Abstract
The invention provides a plasma confinement device. The plasma confinement device comprises a confinement ring, a first confinement sheet and a second confinement sheet, wherein the confinement ring comprises a plurality of concentric circular rings, apertures among the concentric circular rings form a confinement channel, the height of the confinement ring is greater than the average free travel of plasmas, and the confinement channel is used for suppressing the pass of the plasmas; the first confinement sheet is arranged on the top of the confinement ring to enclose the confinement channel, and a plurality of confinement through holes are formed in the first confinement sheet; the second confinement sheet is rotationally arranged on the first confinement sheet along the axial direction of the confinement ring, and a plurality of confinement through holes are formed in the second confinement sheet. The plasma confinement device according to the embodiment has the advantages of simple structure, low maintenance cost and capability of effectively suppressing the diffusion of plasmas. A plasma processing device is further provided.
Description
Technical field
The present invention designs microelectronics technology, particularly a kind of plasm restraint device and have its plasma processing apparatus.
Background technology
In the chamber of etching, under radio-frequency current effect, gas can be converted into plasma.Active chemical group in plasma, can not be subject to the region of photoresist protection to carry out etching to substrate surface.Generally, the bi-product gas after reaction finishes can hinder the carrying out of etching, causes the follow-up reactive ion etching gas waste that enters chamber, therefore needs to use molecular pump to be taken away as early as possible.But plasma also can be followed to bleed and is diffused into the reaction chamber region beyond machining area, and reaction chamber wall is caused to etching and deposition, and then produce internal particle and stain and cause substrate surface to pollute, shorten the working life of reaction chamber simultaneously.
Industrial quarters is generally carried out confined plasma by confinement ring, in the course of processing, plasma is locked in cavity volume (chamber volume), allows to be electroneutral byproduct of reaction simultaneously and is pumped.Research shows, confinement ring is in chamber, to adjust the most important structure of uniformity on plasma sheet, and on sheet, uniformity is the target that industrial quarters is pursued always.
If application number is that US5534751 discloses the device with plasma confinement function, the annulus of this device adopts insulating material, suppresses plasma diffusion by upper and lower close-packed arrays.Most of charged particle can be encountered wall stop motion afterwards when through gap, but the diffusion that still can not completely cut off charged particle completely; Material adopts the fragile material such as such as quartz insulation, easily damaged, so all relative difficulties of processing, installation and maintenance.
If application number is that CN101150909 discloses another plasm restraint device, this device has larger improvement to confinement ring, the donut that donut electric conducting material and annulus adopt diameter to increase, donut can be processed as to unified part, greatly reduce the difficulty of installation and maintenance.But because the gap between confinement ring is fixed, conductance is less, if desired obtain larger conductance, need to roll up the number of rings of donut, chamber diameter is increased greatly, volume is not utilized effectively.
As application number be CN201514924U by donut gap is adjusted, expanded conductance, but because donut excesssive gap in the outer part easily causes charged ion diffusion, be not a kind of stable mode.
If application number is the plasm restraint device that CN101441983 discloses, this device is tubular sandwich construction, be furnished with through hole on tubular structure, can adjust conductance by the confinement ring rotation of multilayer.This relatively simple for structure, handling ease, good uniformity on sheet.But patent requires cylindrical structure surface to carry out anodic oxidation, because barrel contact area is larger, requires the accuracy of manufacture and installation accuracy all very high, make easily wearing and tearing of surface in rotation, easily bring out plasma partial discharge.Simultaneous reactions accessory substance is when the through hole, and easily cohesion is the reactive polymeric thing of easy to clean not, and the easy polymer of sandwich construction is easily filled tubular structural walls face gap, causes cleaning cleaning polyalcohol insufficient.
Summary of the invention
The present invention is intended at least one of solve the problems of the technologies described above.
For this reason, one object of the present invention is to propose a kind of plasm restraint device.This plasm restraint device has simple in structure, and maintenance cost is low and can effectively suppress the advantage of plasma diffusion.
Another object of the present invention is to propose a kind of plasma processing apparatus.
To achieve these goals, the embodiment of first aspect present invention provides a kind of plasm restraint device, comprise: confinement ring, described confinement ring comprises multiple donuts, slit-shaped between described multiple donut is into about beam passage, the height of described confinement ring is greater than the mean free path of plasma, and described confined channel is used for suppressing described plasma and passes through; The first constraint sheet, described the first constraint sheet is arranged on the top of described confinement ring, to seal described confined channel, on described the first constraint sheet, is formed with multiple constraint through holes; And the second constraint sheet, described the second constraint sheet is along on described the first constraint sheet of axially can be rotatably set in of described confinement ring, and described the second constraint is formed with multiple described constraint through holes on sheet.
According to the plasm restraint device of the embodiment of the present invention, slit-shaped between multiple donuts of confinement ring is into about beam passage, and the height of confinement ring is greater than the mean free path (being the mean free path that the height of the confined channel of the above-below direction of confinement ring is greater than plasma) of plasma, thereby confined channel can effectively suppress plasma diffusion.In addition, the second constraint sheet can axially can be rotatably set on the first constraint sheet along confinement ring, therefore, the openings of sizes of the constraint through hole on the first constraint sheet and the second constraint sheet can be adjusted, like this, can adjust by plasma distribution profile, and then improve uniformity on the sheet of plasma.The adjustment of all right convection current conductance of this device, makes byproduct of reaction can discharge rapidly reaction chamber, promotes the rate of discharge of byproduct of reaction.In addition, this plasm restraint device has advantages of simple in structure, easy to maintenance and cost is low.
In addition, plasm restraint device according to the above embodiment of the present invention can also have following additional technical characterictic:
In some instances, described confinement ring and described the second constraint sheet can conduct electricity, described the first constraint sheet insulation.
In some instances, described the second constraint sheet has the aluminium of carborundum to make by surface spraying, and described the first constraint sheet is made up of quartz.
In some instances, described constraint through hole is Long Circle roughly.
In some instances, the width of described constraint through hole radially reducing gradually along direction from outside to inside in described confinement ring.
In some instances, each described constraint through hole comprises multiple son constraint through holes, described multiple son constraint through holes radially arranging along direction from outside to inside in described confinement ring.
In some instances, described multiple son constraint through holes are Long Circle roughly, and the length of described multiple son constraint through holes reducing gradually in the radially edge of described confinement ring direction from outside to inside.
In some instances, described multiple son constraint through holes be circular, reduce gradually near the radius that partly radially retrains through hole near the son of the internal perisporium of described confinement ring of the son constraint through hole of the periphery wall of described confinement ring.
In some instances, the area sum of the open domain of described multiple constraint through hole on described the first constraint sheet is [40% with the ratio of the area of described the first constraint sheet, 80%], the area sum of the open domain of described multiple constraint through hole on described the second constraint sheet is [40%, 80%] with the ratio of the area of described the second constraint sheet.
The embodiment of second aspect present invention provides a kind of plasma processing apparatus, comprising: reaction chamber; Be arranged on top electrode and bottom electrode in described reaction chamber; Exhaust apparatus, described exhaust apparatus comprises the multiple steam vents that arrange around described reaction chamber; Plasm restraint device as described in above-mentioned first aspect embodiment, described plasm restraint device is around described reaction chamber and be arranged on close described multiple steam vents place, so that the gas that described steam vent is discharged is disposed to the external world through described plasm restraint device.
According to the plasma processing apparatus of the embodiment of the present invention, slit-shaped between multiple donuts of confinement ring is into about beam passage, and the height of confinement ring is greater than the mean free path (being the mean free path that the height of the confined channel of the above-below direction of confinement ring is greater than plasma) of plasma, thereby confined channel can effectively suppress plasma diffusion.In addition, the second constraint sheet can axially can be rotatably set on the first constraint sheet along confinement ring, therefore, the openings of sizes of the constraint through hole on the first constraint sheet and the second constraint sheet can be adjusted, like this, can adjust by plasma distribution profile, and then improve uniformity on the sheet of plasma.The adjustment of all right convection current conductance of this device, makes byproduct of reaction can discharge rapidly reaction chamber, promotes the rate of discharge of byproduct of reaction.In addition, this plasma processing apparatus has advantages of simple in structure, easy to maintenance and cost is low.
Additional aspect of the present invention and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or additional aspect of the present invention and advantage accompanying drawing below combination is understood becoming the description of embodiment obviously and easily, wherein:
Fig. 1 is the explosive view of plasm restraint device according to an embodiment of the invention;
Fig. 2 is the schematic diagram of plasm restraint device according to an embodiment of the invention;
Fig. 3 is the schematic diagram of plasm restraint device in accordance with another embodiment of the present invention;
Fig. 4 is the schematic diagram of the plasm restraint device of another embodiment according to the present invention; And
Fig. 5 is the structure chart of plasma processing apparatus according to an embodiment of the invention.
Embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of identical or similar functions from start to finish.Be exemplary below by the embodiment being described with reference to the drawings, only for explaining the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention, it will be appreciated that, term " " center ", " longitudinally ", " laterally ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end ", " interior ", orientation or the position relationship of indications such as " outward " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, rather than device or the element of indication or hint indication must have specific orientation, with specific orientation structure and operation, therefore can not be interpreted as limitation of the present invention.In addition, term " first ", " second " be only for describing object, and can not be interpreted as indication or hint relative importance.
In description of the invention, it should be noted that, unless otherwise clearly defined and limited, term " installation ", " being connected ", " connection " should be interpreted broadly, and for example, can be to be fixedly connected with, and can be also to removably connect, or connect integratedly; Can be mechanical connection, can be also electrical connection; Can be to be directly connected, also can indirectly be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, can concrete condition understand above-mentioned term concrete meaning in the present invention.
With reference to description and accompanying drawing below, these and other aspects of embodiments of the invention will be known.In these descriptions and accompanying drawing, specifically disclose some specific implementations in embodiments of the invention, represent some modes of the principle of implementing embodiments of the invention, but should be appreciated that the scope of embodiments of the invention is not limited.On the contrary, embodiments of the invention comprise all changes, modification and the equivalent within the scope of spirit and the intension that falls into additional claims.
Describe according to the plasm restraint device of the embodiment of the present invention and there is its plasma processing apparatus below in conjunction with accompanying drawing.
Fig. 1 is the schematic diagram of plasm restraint device according to an embodiment of the invention.As shown in Figure 1, plasm restraint device according to an embodiment of the invention, comprising: confinement ring 100, the first constraint sheet 200 and the second constraint sheet 300.
Wherein, confinement ring 100 comprises multiple donuts (as shown in Figure 1), and the slit-shaped between multiple donuts is into about beam passage 110, and the height d of confinement ring 100 is greater than the mean free path of plasma, and confined channel 110 is passed through for suppressing plasma.The first constraint sheet 200 is arranged on the top of confinement ring 100, is formed with multiple constraint through holes 210 to seal on confined channel 110, the first constraint sheets 200.The second constraint sheet 300 can be rotatably set on the first constraint sheet 200 along axial (by the center of circle of confinement ring 100 and the direction vertical with the radial direction of confinement ring 100) of confinement ring 100, on the second constraint sheet 300, is formed with multiple constraint through holes 210.
As a concrete example, confinement ring 100 and the second constraint sheet 300 can conduct electricity, and the first constraint sheet 200 insulate.For example: the second constraint sheet 300 has the aluminium of carborundum SiC to make by surface spraying, the first constraint sheet 200 is made up of quartz.Wherein, confinement ring 100 connects floating ground, can be by the charging neutrality of charged particle.And the second constraint sheet 300 ground connection, the electric field of can avoiding vacillating forms new radio frequency source, again produces plasma.
In concrete example of the present invention, constraint through hole 210 can have various structures.Wherein, a kind of structure of constraint through hole 210 as shown in Figure 2.
Particularly, as shown in Figure 2, each constraint through hole 210 is Long Circle roughly, and wherein, Long Circle refers to for example be similar to substantially run-track shaped.
Again in conjunction with Fig. 2, the width of each constraint through hole 210 reduces along direction from outside to inside (i.e. the direction to internal perisporium 150 by the periphery wall 140 of confinement ring 100) gradually radially (being the radial direction of confinement ring) of confinement ring 100.
Specifically, by the second constraint sheet 300 ground connection.The first constraint sheet 200 adopts insulating material, can be the silicon semiconductor material of quartz or doped with boron element or nitrogen element, can be also the aluminium carrying out after anodic oxidation.200 fixations of the first constraint sheet.Slit-shaped grooving (being confined channel 110) between multiple donuts of confinement ring 100, passes through to suppress plasma.As shown in Figure 2, the two ends of constraint through hole 210 are all circular arc (being similar to runway), and circular arc top is to the first constraint sheet 200(and the second constraint sheet 300) edge is no less than 3mm.The extended line of two straight lines of constraint through hole 210 is all by the center of circle of confinement ring 100, thereby make near the width in the center of circle little, and it is large away from the width in the center of circle, thereby make external plasma concentration lower region obtain larger conductance, can meet plasma confinement, conductance can be as often as possible provided again.
In addition, the area sum of the open domain of multiple constraint through holes 210 on the first constraint sheet 200 is [40% with the ratio of the area of the first constraint sheet 200,80%], the area sum of the open domain of multiple constraint through holes 210 on the second constraint sheet 300 is [40%, 80%] with the ratio of the area of the second constraint sheet 300.The material of the second constraint sheet 300 preferably sprays the aluminium of SiC, or SiC, and electrical ground.The meaning of the second constraint sheet 300 ground connection is, near the electric field of vacillating (stray electric field) radio-frequency current and the electrode transmitting along the conductor wall of reaction chamber finally can import the earth by the second constraint sheet 300 of ground connection, avoid radio frequency to enter other regions beyond reaction chamber, cause secondary discharge to form new plasma and cause and corrode and stain.
In another example of the present invention, as shown in Figure 3, each confined channel 210 comprises multiple son constraint through holes 211.Multiple son constraint through holes 211 radially arranging along direction from outside to inside in confinement ring 100.And, as can be seen from Figure 2, multiple son constraint through holes 211 are Long Circle roughly, the length of multiple son constraint through holes 211 radially reduces along direction from outside to inside gradually confinement ring 100, i.e. the length of the son of close periphery wall 140 constraint through hole 211 is greater than the length near the son constraint through hole 211 of internal perisporium 150.As shown in Figure 3, show each confined channel 130 and comprise 3 sub-confined channel 131.But be understandable that, each confined channel 210 can comprise that being not limited to 3 sons retrains through holes 211, for example 4,5.
That is to say, each confined channel 210 comprises many conduits along the radial arrangement of confinement ring 100 (being multiple son constraint through holes 211).The length of conduit opening is according to the radius ratio opening at conduit center, and to keep inner side conductance low, outside conductance is high.Open domain ratio is greater than 40% and lower than 80%, and the second constraint sheet 300 ground connection.
As shown in Figure 4, in another embodiment of the present invention, multiple son constraint through holes 211 are circular, and, as shown in Figure 4, partly radially reducing gradually near the radius of the son constraint through hole 211 of the internal perisporium 150 of confinement ring 100 near the son constraint through hole 211 of the periphery wall 140 of confinement ring 100.As shown in Figure 4, show each confined channel 210 and comprise 3 son constraint through holes 211.But be understandable that, each confined channel 210 can comprise that being not limited to 3 sons retrains through holes 211, for example 4,5.
That is to say, this confined channel 210 also can comprise multiple manholes (being multiple son constraint through holes 211) of symmetric arrays.Guarantee that circular arc top is no less than in the situation of 3mm to the distance of outer edge (periphery wall 140 and internal perisporium 150), as often as possible arrange manhole, and need meet when manhole layout: the same radially circular hole of (on the same Radius of confinement ring 100) has common tangent, and common tangent also will pass through the center of circle of confinement ring 100, to keep inner side conductance low, outside conductance is high.Open domain ratio is greater than 40% and lower than 80%, and the second confinement ring 300 ground connection.
According to the plasm restraint device of the embodiment of the present invention, slit-shaped between multiple donuts of confinement ring is into about beam passage, and the height of confinement ring is greater than the mean free path (being the mean free path that the height of the confined channel of the above-below direction of confinement ring is greater than plasma) of plasma, thereby confined channel can effectively suppress plasma diffusion.In addition, the second constraint sheet can axially can be rotatably set on the first constraint sheet along confinement ring, therefore, the openings of sizes of the constraint through hole on the first constraint sheet and the second constraint sheet can be adjusted, like this, can adjust by plasma distribution profile, and then improve uniformity on the sheet of plasma.The adjustment of all right convection current conductance of this device, makes byproduct of reaction can discharge rapidly reaction chamber, improves the uniformity that plasma distributes in chamber, and promotes the rate of discharge of byproduct of reaction.In addition, this plasm restraint device has advantages of simple in structure, easy to maintenance and cost is low.
Fig. 5 is the structure chart of plasma processing apparatus according to an embodiment of the invention.As shown in Figure 5, and in conjunction with Fig. 1-4, plasma processing apparatus 400 according to an embodiment of the invention, comprising: reaction chamber 410, top electrode 420, bottom electrode 430, exhaust apparatus 440 and plasm restraint device.
Wherein, top electrode 420 and bottom electrode 430 are arranged in reaction chamber 410, and top electrode 420 is positioned at the top of bottom electrode 430.Exhaust apparatus 440 comprises the multiple steam vents 441 that arrange around reaction chamber 410.Plasm restraint device is around reaction chamber 410 and be arranged on close multiple steam vents 441 places, so that the gas that steam vent 441 is discharged is disposed to the external world through plasm restraint device.
The operation principle of the plasma processing apparatus to the embodiment of the present invention is described in detail below.
Shown in Fig. 1-5, this plasma processing apparatus 400 has a reaction chamber 410, is generally cylindrical.In reaction chamber 410, there is the top electrode 420 and the bottom electrode 430 that be arranged in parallel.Conventionally, namely spray head of top electrode 420, bottom electrode 430 is electrostatic chuck (electro-static chuck), and the region between top electrode 420 and bottom electrode 430 is called cavity volume (chamber volume), this region by formation high-frequency energy to light and to maintain plasma.Above bottom electrode 430, place substrate, from substrate, can cut out the integrated circuit (IC) chip of One's name is legion.High low radio frequency is applied to respectively on top electrode 420 and bottom electrode 430, thereby at the interior generation electric field of reaction chamber 410, this electric field applies electric field force to the electronics in reaction chamber 410, after electronics accelerates, in the molecular collision of reacting gas, the electronics loss in molecule, produces secondary electron, secondary electron constantly accelerates and new molecular collision again, avalanche effect occurs, make chamber reaction gases plasma, plasma obtains and excites.The remaining carbonium of molecule that loses the reacting gas after electronics, accelerates to bottom electrode 430, and the neutral substance in substrate is combined, and strong chemical reaction occurs, and the semiconducter process such as deposition, etching are carried out.Prolong the position that is parallel to top electrode 420 and bottom electrode 430 exhaust apparatus 440 is set, exhaust apparatus 440 has exhaust outlet 441, exhaust outlet 441 is arranged symmetrically with up and down, opening direction respectively up and down, and be connected with plasm restraint device provided by the invention, also in time byproduct of reaction got rid of to reaction chamber 410 in order to confined plasma.The periphery of upper and lower two plasm restraint devices, a quartz ring 450 can be set to be surrounded, quartz can corrode by anti-plasma, on quartz ring 450, can comprise and prolong three the linear-motion actuator 460(linear actuator that are no less than that are circumferentially evenly arranged simultaneously), quartz ring 450 can axially be moved up and down along chamber reposefully.When after substrate completion of processing, open and get sheet window, quartz ring 450 moves simultaneously, manipulator can be taken away substrate, and place new substrate.
The plasm restraint device of the plasma processing apparatus 400 of the embodiment of the present invention has the following advantages:
1, opening (the retraining through hole) size that retrains sheet in processing in upper and lower two confinement ring can be adjusted (for example, by rotation the second constraint sheet, form dislocation with the first constraint sheet, like this, the size of constraint through hole changes), and then the plasma distribution profile in reaction chamber is adjusted, uniformity on sheet is improved.
2, this plasm restraint device can provide the larger region of more than 1.4 times conductances, particularly diameter that larger conductance relatively can be provided in identical space, makes byproduct of reaction can discharge quickly reaction chamber.
3, this plasm restraint device can make charged particle to break through to be diffused in non-machining area, has also protected non-machining area when having improved the utilance of plasma.
According to the plasma processing apparatus of the embodiment of the present invention, slit-shaped between multiple donuts of confinement ring is into about beam passage, and the height of confinement ring is greater than the mean free path (being the mean free path that the height of the confined channel of the above-below direction of confinement ring is greater than plasma) of plasma, thereby confined channel can effectively suppress plasma diffusion.In addition, the second constraint sheet can axially can be rotatably set on the first constraint sheet along confinement ring, therefore, the openings of sizes of the constraint through hole on the first constraint sheet and the second constraint sheet can be adjusted, like this, can adjust by plasma distribution profile, and then improve uniformity on the sheet of plasma.The adjustment of all right convection current conductance of this device, makes byproduct of reaction can discharge rapidly reaction chamber, promotes the rate of discharge of byproduct of reaction.In addition, this plasma processing apparatus has advantages of simple in structure, easy to maintenance and cost is low.
In the description of this specification, the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present invention or example in conjunction with specific features, structure, material or the feature of this embodiment or example description.In this manual, the schematic statement of above-mentioned term is not necessarily referred to identical embodiment or example.And specific features, structure, material or the feature of description can be with suitable mode combination in any one or more embodiment or example.
Although illustrated and described embodiments of the invention, those having ordinary skill in the art will appreciate that: in the situation that not departing from principle of the present invention and aim, can carry out multiple variation, modification, replacement and modification to these embodiment, scope of the present invention is by claim and be equal to and limit.
Claims (10)
1. a plasm restraint device, is characterized in that, comprising:
Confinement ring, described confinement ring comprises multiple donuts, and the slit-shaped between described multiple donuts is into about beam passage, and the height of described confinement ring is greater than the mean free path of plasma, and described confined channel is used for suppressing described plasma and passes through;
The first constraint sheet, described the first constraint sheet is arranged on the top of described confinement ring, to seal described confined channel, on described the first constraint sheet, is formed with multiple constraint through holes; And
The second constraint sheet, described the second constraint sheet, along on described the first constraint sheet of axially can be rotatably set in of described confinement ring, is formed with multiple described constraint through holes on described the second constraint sheet.
2. plasm restraint device according to claim 1, is characterized in that, described confinement ring and described the second constraint sheet can conduct electricity, described the first constraint sheet insulation.
3. plasm restraint device according to claim 2, is characterized in that, described the second constraint sheet has the aluminium of carborundum to make by surface spraying, and described the first constraint sheet is made up of quartz.
4. according to the plasm restraint device described in claim 1-3 any one, it is characterized in that, described constraint through hole is Long Circle roughly.
5. plasm restraint device according to claim 4, is characterized in that, the width of described constraint through hole radially reduces along direction from outside to inside gradually described confinement ring.
6. according to the plasm restraint device described in claim 1-3 any one, it is characterized in that, each described constraint through hole comprises multiple son constraint through holes, described multiple son constraint through holes radially arranging along direction from outside to inside in described confinement ring.
7. plasm restraint device according to claim 6, is characterized in that, described multiple son constraint through holes are Long Circle roughly, and the length of described multiple son constraint through holes reducing gradually in the radially edge of described confinement ring direction from outside to inside.
8. plasm restraint device according to claim 6, it is characterized in that, described multiple son constraint through hole be circular, reduces gradually near the radius that partly radially retrains through hole near the son of the internal perisporium of described confinement ring of the son constraint through hole of the periphery wall of described confinement ring.
9. plasm restraint device according to claim 1, it is characterized in that, the area sum of the open domain of described multiple constraint through hole on described the first constraint sheet is [40% with the ratio of the area of described the first constraint sheet, 80%], the area sum of the open domain of described multiple constraint through hole on described the second constraint sheet is [40%, 80%] with the ratio of the area of described the second constraint sheet.
10. a plasma processing apparatus, is characterized in that, comprising:
Reaction chamber;
Be arranged on top electrode and bottom electrode in described reaction chamber;
Exhaust apparatus, described exhaust apparatus comprises the multiple steam vents that arrange around described reaction chamber;
Plasm restraint device as described in claim 1-9 any one, described plasm restraint device is around described reaction chamber and be arranged on close described multiple steam vents place, so that the gas that described steam vent is discharged is disposed to the external world through described plasm restraint device.
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| CN106920731A (en) * | 2015-12-28 | 2017-07-04 | 中微半导体设备(上海)有限公司 | A kind of ground loop and reaction chamber for limiting plasma leakage |
| CN108538745A (en) * | 2017-03-01 | 2018-09-14 | 北京北方华创微电子装备有限公司 | Reaction chamber |
| CN110610841A (en) * | 2018-06-14 | 2019-12-24 | 中微半导体设备(上海)股份有限公司 | Plasma confinement assembly and processing device thereof |
| CN111304638A (en) * | 2019-12-05 | 2020-06-19 | 深圳市纳设智能装备有限公司 | CVD equipment |
| CN111653468A (en) * | 2020-05-23 | 2020-09-11 | 上海邦芯半导体设备有限公司 | Plasma confinement device and plasma equipment |
| CN113130282A (en) * | 2019-12-31 | 2021-07-16 | 中微半导体设备(上海)股份有限公司 | Plasma confinement structure, manufacturing method thereof and plasma processing device |
| CN114420524A (en) * | 2020-10-28 | 2022-04-29 | 中微半导体设备(上海)股份有限公司 | Gas flow regulating device and method and plasma processing device using same |
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