CN101076219A - Decoupling reactive ion etching chamber containing multiple processing platforms - Google Patents

Decoupling reactive ion etching chamber containing multiple processing platforms Download PDF

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Publication number
CN101076219A
CN101076219A CNA2007100422855A CN200710042285A CN101076219A CN 101076219 A CN101076219 A CN 101076219A CN A2007100422855 A CNA2007100422855 A CN A2007100422855A CN 200710042285 A CN200710042285 A CN 200710042285A CN 101076219 A CN101076219 A CN 101076219A
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frequency
plasma
chamber
radio
processing region
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CN100452945C (en
Inventor
尹志尧
倪图强
陈金元
钱学煜
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Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd.
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Advanced Micro Fabrication Equipment Inc Shanghai
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Priority to CNB2007100422855A priority Critical patent/CN100452945C/en
Priority to US11/772,726 priority patent/US8366829B2/en
Publication of CN101076219A publication Critical patent/CN101076219A/en
Priority to KR1020070138741A priority patent/KR100950116B1/en
Priority to JP2008004243A priority patent/JP4963293B2/en
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Publication of CN100452945C publication Critical patent/CN100452945C/en
Priority to US13/620,654 priority patent/US9208998B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Abstract

The invention is used for isolating the plasma and RF. In the invention, each handling area at least has two RF frequencies feeding in its cathode; wherein, one RF frequency is at least two times higher than the other one so as to provide the decoupling reactive ion etching capability; the room body of the handling room is grounded. By the frequency isolation, the multi RF frequencies fed-in from cathode is not able to bring RF cross talk and fluctuation. The invention also uses a plasma restraint device to avoid the cross talk of plasma. A grounded shared exhaust passage is attached to the vacuum pump.

Description

The decoupling reactive ion etching chamber that comprises a plurality of processing platforms
[technical field]
The present invention relates to plasma processing chamber, relate in particular to a kind of have a pair of or a plurality of parallel processing regions, can be individually or side by side two of processed or the more plasma processing chamber of multi-disc substrate.
[background technology]
In the manufacturing process of semiconductor chip, can adopt two based semiconductor chip treatment systems usually.First kind system is commonly called batch processing (batch processing) system.The main cause of using batch processing system can be by the while processed at a plurality of chips or substrate, thereby this system can provide high output production capacity.But along with the increasingly stringent of performance of semiconductor device code requirement, industrial quarters has transferred to use the second class process chamber, that is, and and the monocrepid process chamber.The main cause of exploitation monocrepid treatment system is that it is more convenient for controlling the operational characteristic of substrate and the technology homogeneity of substrate surface.
On the other hand, in some specific application scenario, people also attempt providing the single process chamber of two substrates of a kind of parallel processing simultaneously.This kind application can two substrates of single treatment in the advantage that the bonding substrate is handled.United States Patent (USP) the 5th, 811 has disclosed a kind of two/substrate process chamber system of parallel (twin/tandem) for No. 022, and this invention is a kind of inductance coupling high type plasma chamber, and using plasma is removed photoresist, in the industry also by be: photoresist ashing.Photoresist ashing is a kinds of oxidation reaction, and this process uses oxygen to remove organic photoresist.Photoresist is oxidized to gas, as carbon monoxide, carbon dioxide and water vapour, extracts process chamber out by vacuum pump then.Therefore, this type of is applied in the semiconductor chip processing procedure and does not require and has and the strict more same technology homogeneity of application (as the semiconductor chip etching) of some performance specification.
Because the processing requirements of photoresist ashing is not strict, ' process chamber that proposes in 022 comprises that the plasma of two separation generates chamber (two separate plasma generation chamber) to patent, the bottom that each plasma generates the chamber is open, and link to each other with a substrate process chamber, this substrate process chamber content is provided with two substrates.Be provided with a charged particle filter between plasma generation chamber and the substrate process chamber, be used to prevent that charged particle from entering the substrate process chamber, but allow electroneutral active particle to enter the substrate process chamber, thereby photoresist is removed from substrate.Because the structure of this substrate process chamber is configured to can't be by starter on substrate less than separation and plasma between two substrates, further, owing to used filter to prevent that charged particle from entering the substrate process chamber, ' the substrate process chamber that proposes in 022 can not be used for current performance specification and require stricter application (as the semiconductor chip etching) patent, and only can be used for simple ashing.
United States Patent (USP) the 5th, 855 has also proposed another parallel process chamber configurations for No. 681.' process chamber that proposes in 681 comprises two processing regions and can handle two substrates simultaneously patent, and comprises discrete gas distribution assembly and radio frequency power source to provide density uniform plasma above the substrate surface in each processing region.Especially, ' weak point of having explained Mattson system (content of aforementioned patent ' 022) in 681 is by in a plurality of processing platforms in single process chamber (multiple stations) the multi-disc substrate being carried out partly PROCESS FOR TREATMENT and directly cause to patent.In order to improve this design, patent ' 681 teachings should have " processing region of isolating mutually " to process chamber, so that " PROCESS FOR TREATMENT of isolating simultaneously at least two zones can be handled at least two substrates so simultaneously ".
Although the solution in isolation processing zone can realize two substrates of parallel processing, it has been drawn and has been commonly called as the difficulty (stationmatching) into " chamber coupling " (chamber matching) or " processing platform coupling ".That is, it makes two processing regions of control and treatment chamber become difficult so that identical plasma treatment condition/environment to be provided.For example, if the etch rate of a processing region is higher than another processing region, then be difficult to the end point of control etching process.In other words, if the end point of etching technics is definite according to higher etch rate zone, will cause the substrate in another processing region not obtain complete etching.Otherwise if the end point of etching technics is delayed, thereby the substrate in the then high etch rate zone will be damaged by overetch.
United States Patent (USP) the 6th, 962 has proposed the improvement version of above-mentioned parallel processing chamber, proposed " process chamber with processing region of a plurality of mutual isolation " in this patent for No. 644.' adopt " pump chamber is taken out at the center " (a central pumping plenum) to make two process chambers " communication " mutually in 644, still this design has caused being called as technically " radio frequency is crosstalked " problem (RFcrosstalk) again in patent.In parallel treatment system, radio frequency is crosstalked and is had great harm, because the variation meeting of condition has a negative impact to the PROCESS FOR TREATMENT in second processing region in processing region.
Also there is a problem that causes owing to " isolation " in aforementioned parallel processing chamber, and it is difficult to matching treatment result between two processing regions.In addition, ' two radio frequency power sources have been used in the parallel processing chamber of describing in 644 to patent, and the phase place of these two radio frequency power sources and frequency are locked in together, are used for preventing that two power sources from causing the pulse ripple of radio-frequency power (beating).This has increased the structure of process chamber and the complexity of configuration.At last, the method that produces plasma in the aforementioned parallel processing chamber can not be guaranteed to satisfy and makes the needed strict performance code requirement of advanced semiconductor device.Therefore, semi-conductor industry circle still has demand that a kind of many substrates process chamber is provided, and it can guarantee high-caliber processing performance, can also guarantee that the processing performance in each processing region of process chamber is all mated mutually simultaneously.
[summary of the invention]
The object of the present invention is to provide a kind of many substrates process chamber, it can be individually or side by side two of processed or more multi-disc substrate, it can guarantee high-caliber processing performance, can also guarantee that the processing performance in each processing region of process chamber is all mated mutually simultaneously.
A plurality of embodiment of the present invention has provided the process chamber that comprises two processing regions or more a plurality of parallel processing regions together with plasma isolation and frequency isolation performance, and they can be from a plurality of rf frequencies of each processing region bottom feed-in.Process chamber wall (chamber wall) ground connection, and also ground connection of the dividing wall (partition wall) between two adjacent processing regions.Frequency of utilization is isolated makes that can not produce radio frequency from a plurality of rf frequencies of negative electrode feed-in crosstalks and fluctuate.The plasma restraint device is used to prevent plasma crosstalk (plasma crosstalk).Also provide the common exhaust passage (grounded common evacuation path) of a ground connection to be connected on the single vacuum pump (single vacuum pump) in addition.
Be provided with rings of micro-tunnels structure (micro-channels ringstructure) in exhaust channel porch, can confine a plasma in the processing region, thereby plasma just can not enter the exhaust passage and can not produce plasma between processing region and crosstalk like this.Because the present invention adopts single vacuum pump to aspirate exhaust, thereby can cause asymmetric suction exhaust, this microchannel also helps to realize the pressure distribution in the processing region.This ring structure can also prevent to produce between two processing regions radio-frequency radiation and reveal.This ring structure is configured to top and insulate, thereby can not cause plasma sputtering (no plasma sputtering), but the bottom is the also ground connection of conduction, reveals (RFleakage) to prevent radio frequency.
The restriction of the plasma of process chamber of the present invention can prevent the radio frequency fluctuation, thereby does not need the phase place and the frequency of locking radio frequency power source in the prior art as described above.And because the present invention disposes the plasma restriction and radio frequency separates, each processing region can carry out PROCESS FOR TREATMENT separately or a plurality of processing region carries out PROCESS FOR TREATMENT simultaneously concurrently.
[description of drawings]
The accompanying drawing that comprises in this specification, the part as this specification shows embodiments of the present invention, and is used from explanation and describes principle of the present invention and enforcement with specification one.Accompanying drawing is intended to describe in a kind of mode of summary the principal character of described embodiment.The purpose of accompanying drawing does not also lie in each detailed features of describing actual execution mode, do not lie in the real size of describing described element, and element is not to draw in proportion yet.
Fig. 1 is the schematic cross-section of the parallel plasma processing chamber drawn according to one embodiment of present invention.
Fig. 2 is the schematic cross-section of C-C along the line among Fig. 1.
Fig. 3 is the profile of an embodiment of ionic medium body restraint device of the present invention.
Fig. 4 is the profile part, that vertically amplify of plasma restraint device as shown in Figure 3.
Fig. 5 is the structural representation of radio frequency matching network among the present invention.
Fig. 6 shows an embodiment, has wherein adopted isostasy mechanism between two processing regions.
Fig. 7 shows an alternative embodiment of the invention, and wherein each in two negative electrodes all is applied in a plurality of rf frequencies.
Fig. 8 shows an example that adopts two offset frequencies to carry out PROCESS FOR TREATMENT of realizing according to embodiments of the invention.
Fig. 9 shows an example that adopts two source frequencies to carry out PROCESS FOR TREATMENT of realizing according to embodiments of the invention.
[embodiment]
Embodiments of the invention have provided a multiduty plasma chamber, and it can provide high-precision homogeneity processed under the situation of high yield.The present invention can realize the stability and the consistency of the plasma in each processing region, and the PROCESS FOR TREATMENT result who is obtained has satisfied the high-precision requirement in the sophisticated semiconductor processing.The invention provides the decoupling reactive ion etching chamber (multi-station decoupled reactive ion etch chamber) with a plurality of processing platforms or processing region, wherein each processing region all is applied in a plurality of radio frequency power sources.The present invention has adopted multifrequency nature and design to prevent between adjacent two parallel processing regions producing frequency fluctuation and radio frequency is crosstalked.Also nobody proposed to realize decoupling reactive ion etching at two or more rf frequencies of negative electrode feed-in of each processing region of the process chamber that walks abreast especially, up to now.
Fig. 1 is the sectional view of the parallel plasma processing chamber 100 drawn according to one embodiment of present invention, and Fig. 2 is the sectional view of C-C along the line among Fig. 1.Description meeting herein is with reference to these two figure.Chamber body (chamber body) 105 is made by conductive metallic material (as aluminium) usually, and the chamber body comprises two parallel processing regions 110 and 115. Processing region 110 and 105 is physically separated by dividing wall 122; In addition, also adopt isostasy mechanism to come pressure between two processing regions 110 of balance and 105, specific design will be elaborated hereinafter.Chamber body 105 (comprising dividing wall 122) is grounded, thereby provides electric field isolation between two processing regions 110 and 115, helps avoid radio frequency and crosstalks.
A fixing negative electrode (fixed cathode) 120 and 125 is respectively arranged in each processing region 110 and 115, can be used to place substrate 130,135 so that carry out PROCESS FOR TREATMENT.In the present embodiment, negative electrode is fixed, because it is with respect to the ground connection better of negative electrode movably.Because in the present embodiment, two frequencies are by the negative electrode feed-in, therefore effectively ground connection seems extremely important.Hence one can see that, uses fixed negative pole to have bigger advantage than prior art for present embodiment.
Negative electrode 120 and 125 comprises a clamping device (chuck mechanism), substrate can be fixed on assigned address.This clamping device can be any traditional clamping device, as traditional electrostatic chuck.In addition, negative electrode 120 and 125 also comprises a built-in electrode, is used for radio-frequency energy radiation is entered processing region.Radio-frequency (RF) energy is sent to negative electrode by radio frequency conductor (RF conductors) 140 and 145.Each radio frequency conductor couples mutually with two radio frequency power sources, as, radio frequency power source 152 and 154 is coupled to radio frequency conductor 140, and radio frequency power source 156 and 168 is coupled to radio frequency conductor 145, and the two realizes coupling via match circuit 153 and 157 respectively.In the present embodiment, radio-frequency power is coupled equably to be distributed on the negative electrode, such as, in the present embodiment, realize power delivery by triadius type coupler (3-pronged coupler), each triadius type coupler has 3 connectors (only showing two 150,155 in the sectional view), is 120 angles between three connectors separately.
In the present embodiment, decoupling reactive ion etching realizes that by apply two rf frequencies on each negative electrode wherein these two frequency intervals are enough big, makes that the radio-frequency power that comes from these two power sources is uncoupling (decoupled).For example, the ratio of high-frequency and low-frequency frequency is set at least greater than 2, can guarantee two isolation between the frequency like this.For example, low frequency can be selected in 500khz to 2.2MHZ scope.For a specific example, low frequency is made as about 2MHZ, and second rf frequency is made as about 27MHZ.In another example, low frequency is made as about 2MHZ, and second rf frequency is made as about 60MHZ or 100MHZ approximately.
In the present embodiment, the ground of the interference sections between two processing regions 110 and 115 is avoided by radio frequency power source being carried out frequency adjustment (frequency tuning).It can realize quick adjustment (for example, less than 1 second response time), thereby any disturbance in processing region can not have a negative impact to the PROCESS FOR TREATMENT in its adjacent area.In the present embodiment, adopted radio-frequency (RF) match 153 and 157 high efficiency, self-isolation, each radio-frequency (RF) match is with the negative electrode in processing region of two-way radiofrequency signal access.For this purpose, can adopt the radio frequency matching circuit that proposes in the U.S. Patent application of having announced 2005/0133163.But ' radio frequency matching method that proposes in 163 requires to use filter, and this can increase the complexity of radio-frequency (RF) match structure in patent application.Thereby it will be more suitable adopting the U.S. Patent application of having announced 2007/0030091.Patent application ' has been avoided the use of filter about the innovative design of radio-frequency (RF) match in 091.
Fig. 5 is a kind of structural representation of radio frequency matching network, and it can be used in the process chamber of the present invention, and it does not need to use filter.As shown in the figure, this embodiment has two radio frequency inputs, and one is the high frequency importation, and another is the low frequency importation.This radio frequency matching network always has three ports, and wherein two is input port,, is connected to the high frequency input port 158 and the low frequency input port 156 that is connected to the low frequency radio frequency generator of high-frequency radio frequency generator that is; And the radio-frequency (RF) output end mouth that the energy of a plurality of radio freqnency generators is outputed to vacuum processing chamber by transmitting medium (not shown).The radio frequency matching network of this vacuum processing chamber can be divided into a low frequency part and a HFS, and these two parts merge by same tie point at the output port place.HFS comprises a ground capacitor C1 ', a capacitor C2 ' and an inductor L '.In addition, low frequency part comprises a terminal by capacitor C1 ground connection, and another terminal that is connected to capacitor C2, is connected to output port after this capacitor C2 and inductor L are parallel.
In low frequency part, inductor L, capacitor C1 and capacitor C2 have constituted a low pass filter, and at HFS, inductor L ', ground capacitor C1 ' and capacitor C2 ' have constituted a high pass filter.When the frequency of high frequency input is higher than the frequency of low frequency input far away, the frequency that is the high frequency input is that at least 2 times of low frequency incoming frequencies are (preferred, be at least 10 times) time, because the characteristic of high pass filter and the vacuum processing chamber impedance operator under the high frequency input, HFS only needs a less inductance just can realize the conjugate impedance match of whole matching network and vacuum processing chamber.Under certain conditions, it is feasible using non-physics inductor (physical inductor) at HFS, and only uses conductive features (as connecting line) the radio-frequency (RF) output end mouth to be connected to the bottom electrode of vacuum processing chamber with a conduction connector.Conductive features has replaced the effect of inductor like this.Under this configuration, the self-induction of conductive features and conduction connector equivalence basically is an inductor.At this moment, ground capacitor C1 ' can be replaced by the capacitor parasitics between conductive features, conduction connector and the ground connection.Because the less and difficult adjusting of value of capacitor parasitics C1 ' and L ', the capacitor C2 ' of HFS can adopt adjustable condenser so that adjust the impedance of circuit.
The value of capacitor and inductor can obtain by the Frequency Estimation of high and low frequency part.And desirable impedance can obtain by the value of selecting capacitor C1.As everyone knows, these matching networks of being made up of capacitor and inductor itself have complex impedance.So,, can realize radio-frequency (RF) match by the value of components and parts in selection and the adjustment matching network because circuit elements device and lead have the self-resistance value.When low frequency part was connected to the low frequency radio frequency generator, resulting impedance under low frequency was gripped coupling substantially altogether with resulting impedance under low frequency when output port is partly measured via the return path tremendously low frequency when the output port tremendously low frequency is partly measured.When HFS was connected to the high-frequency radio frequency generator, resulting impedance under high frequency was gripped coupling substantially altogether with resulting impedance under high frequency when output port is partly measured via the return path tremendously high frequency when the output port tremendously high frequency is partly measured.
In radio frequency matching network shown in Figure 5, the low frequency radio frequency energy is exported at output port by the circuit that comprises capacitor C2 and inductor L.Low frequency radio frequency output can have two branch roads or path connects away then, that is, and and input vacuum processing chamber or import HFS.HFS comprises (except that parasitic capacitance) capacitor C2 ' and inductor L '.In the present embodiment, the capacitor C2 ' of HFS and inductor L ' be through being provided with, and makes for the low frequency radio frequency input impedance of HFS be far longer than the impedance of vacuum processing chamber.Therefore, most energy of low frequency radio frequency generator all are input to vacuum processing chamber, thereby and can not be imported into HFS and burn the high-frequency radio frequency generator.Further, by the value of choose reasonable capacitor C2 ', the energy that is input to HFS can be lowered to below 2%.
Similarly, after the high-frequency radio frequency energy is produced by the high-frequency radio frequency source, through by capacitor C 2 ' and inductance L ' circuit formed arrives output port, and it is optional that high-frequency radio frequency output at this moment has two branch roads, that is, and input vacuum reaction chamber or import low frequency part.Low frequency part comprises parasitic capacitance, capacitor C2 and inductor L, and wherein inductor L is connected with capacitor C2 is parallel.The end of capacitor C1 is connected to capacitor C2, other end ground connection.By this circuit arrangement, increase the estimated value of capacitor and inductor, the value of the whole capacitor of the step of going forward side by side can be so that for the high-frequency radio frequency input, the impedance of low frequency part be far longer than the impedance of vacuum processing chamber.Therefore, most energy of high-frequency radio frequency generator all are imported into vacuum processing chamber, thereby and can not be imported into low frequency part and burn the low frequency radio frequency generator.In addition, by the value of choose reasonable capacitor C1, the energy that is input to low frequency part can be lowered to below 2%.
Refer again to Fig. 1 and Fig. 2, handling gas is provided by a shared source 160.Be assigned in each process chamber by gas tip 170 and 175 from the gas of sharing source 160, in the present embodiment, these two gas tips adopt two-region (dual zone) or multi-region gas tip.That is, as shown in Figure 1, gas tip 170 comprises central area 172 and outer peripheral areas 176, and central area 172 and outer peripheral areas 176 separate by sealing 174.Appendix 171 delivers gas to central area 172, and appendix 173 delivers gas to outer peripheral areas 176.Gas delivery ratio between central area and the outer peripheral areas can be by sharing source 160 controls.In addition, can be by the part of pipeline 171 and 173 gases of carrying by sharing source 160 controls.That is, pipeline 171 and 173 can be carried similar and different gas or admixture of gas.
Gas tip 170 and 175 also comprises a built-in conductive electrode, thereby is to constitute grounded circuit with respective cathode 120 and 125 radio frequency power sources that are coupled.
Fig. 1 also shows a center vacuum pump 180.Center vacuum pump 180 can be discharged gas in processing region 110 and 115 by the exhaust outlet 182 of exhaust chamber 184.Use single center vacuum pump 180 to simplify the structure of entire process chamber, and can make process chamber compact more.In addition, the exhaust outlet 182 of Gong Xianging can also help the pressure between balanced two processing regions 110 and 115.But this design has also brought some problems, will describe according to present embodiment below.
Below explain about processing region 110, but should be appreciated that same explanation is also applicable to processing region 115.As shown in Figure 1, because exhaust outlet 182 is between two processing regions 110 and 115, it has made the exhaust channel of an inclination for each processing region.For example, arrow a is the path of particle along close exhaust outlet 182 processes of processing region, and arrow b is that particle is along the path of processing region away from exhaust outlet 182 processes.Understand easily, path b will be longer than path a, and this will cause having pressure differential in the processing region 110.In order to overcome this deficiency, in the present embodiment, in each processing region, be provided with microchannel plasma restraint device 190,195.Restraint device 190 is used for isolation processing zone 110 and exhaust outlet 182, allows from processing region 110 interior with the mode extracting gases along processing region 110 counterpressures simultaneously.Restraint device 190 can adopt the structure of any ring that proposes in the U.S. Patent application of having announced 2007/0085483.
An embodiment of the plasma restraint device that can be used for Fig. 1 process chamber has been shown among Fig. 3 and Fig. 4, has marked with sequence number 70.Although the present invention can adopt the plasma restraint device of other type, can provide more complete explanation for the reader to the description of Fig. 3 and Fig. 4.As shown in Fig. 3 and Fig. 4, the plasma restraint device is between processing region 110 and exhaust chamber 184.In the embodiment shown in fig. 1, the upper position of restraint device 70 and substrate 130 roughly are in sustained height.Plasma restraint device 70 comprises the conductive component 71 of a ground connection.The conductive component 71 of this ground connection is by its outer peripheral edge 72 and relative inner peripheral edge 73 definition, and it is usually around the inwall 183 of exhaust chamber 184.In addition, the conductive component 71 of ground connection has top surface 74 and relative basal surface 75.As shown in the figure, several passages 76 form according to the predetermined way setting in conductive component 71 inside of ground connection, and extend between basal surface 74 and the top surface 75.The conductive component 71 of ground connection has constituted an electric field barrier, and the radio-frequency transmissions (RF emissions) that has suppressed to come from plasma basically arrives exhaust outlet 182.By this mode, plasma can be by starter or formation in exhaust outlet 182.In addition, radio frequency between two processing regions 110 and 155 crosstalk (RF crosstalk) has also been avoided in this configuration.
Plasma restraint device 70 also comprises an electric insulation layer 80, and this insulating barrier is positioned at the top surface 74 of the conductive component 71 of (or part applies) ground connection.As shown in Figure 4, this electric insulation layer with respect to its outer peripheral edge 72 substantially radially, extend internally.This electric insulation layer can be made of one deck (as shown in the figure) or multilayer.Be positioned at electric insulation layer 80 the top be an electrically conductive support ring 90.This support ring 90 has an its outer peripheral edge 91 (it and its outer peripheral edge 72 coplanes), and also has an inner peripheral border 92 that separates certain space.This support ring and this several electrically conductive parts 95 integrate, make these electrical conductivity parts 95 be spaced from each other by predetermined interval, and with conductive component 71 insulation of ground connection, thereby these electrical conductivity parts 95 are electric floating ground (electrically floating from ground) to the earth in process treatment process.These electrical conductivity parts 95 are expressed as one group of isolated donut 96 herein, and annulus 96 constituted one group of channel 99 each other, and passage 76 fluids on the conductive component 71 of this channel 99 and ground connection are communicated with.Therefore, passage 76 and 99 has constituted a fluid passage, and the reacting gas that allows to be used for to produce plasma in processing region 110 leaves processing region 110, and arrives exhaust outlet 182.In a kind of form of the present invention, electrical conductivity assembly or parts 95 can adopt the semiconductor doping material to make.In the case, semi-conducting material mixes has increased the electrical conductance of semi-conducting material.
Can know that from Fig. 4 the length of each bar passage 99 is all greater than the mean free path of any charged particle, these charged particles are present in the plasma in the process chamber 110.Thereby, when plasma is sucked into the process of exhaust area from processing region, all charged particles by passage 99 all can clash into this several electrically conductive donuts 96, thus charged particle before arriving the discharge areas of plasma processing chamber, just be disconnected its with electric charge.In the present invention, as shown in Figure 3 and Figure 4, the surface that should understand electrical conductivity parts 95 (being shown as the donut 96 of one group of electrically conductive herein) can be coated with or be enclosed with a kind of material, and this material can be resisted and come from the processing region 110 plasma that the produces plasma etching to it.In one embodiment of the invention, the material that is coated on electrical conductivity parts 96 surfaces comprises Y 2O 3Thereby this coat has been guaranteed the corrasion that electrical conductivity parts 95 can not be subjected to plasma and has been avoided the micronic dust particle (particles) that produces therefrom.In another embodiment, electrical conductivity parts 96 can be a kind of integrally formed conductive plates (not shown), conductive plate is provided with long and narrow hole or hole, the configuration of long and narrow hole or hole be configured to equally when the charged particle in the plasma by the time charged particle is neutralized, allow neutral particle to pass through simultaneously.
Can also adopt the multiple alternate embodiment of restraint device in addition.For example, understand easily, the conductive component 71 of ground connection carries out anodization with the surface of the electrical conductivity ring 96 that those can contact with plasma, thereby prevents plasma etching, forms electric insulation layer simultaneously thereon.Anodization is a kind of electrolysis procedure, and this processing can make the metal surface form one deck oxide protective layer.Anodization can be used for multiple purpose, is included in the metal surface and forms hard coating, perhaps makes metal have electric insulating quality, and makes metal anticorrosive.In a kind of form of the present invention, the conductive component 71 of electrically conductive parts 96, electrically conductive support ring 90 and ground connection is made of aluminum, electric insulation layer 80 is a kind of aluminium anodes layers, its can by with conductive supporting ring 90 towards the surface of electrical grounding assembly 71 or electrical grounding assembly 71 carry out anodization towards the surface of conductive supporting ring 90 and obtain.In another embodiment of the present invention, the all surface of these structures can be by anodization, can guarantee that like this electrical conductivity parts 95 are electric floating ground (electrically floating relative to the ground) with respect to the earth in process treatment process.Further, in of the present invention other implemented, several conducting rings in the conductive component 100 and path 10 2 can at first carry out anodization towards processing region or the surf zone that touches plasma, apply the material that one deck prevents plasma etching subsequently again, such as: apply one deck Y 2O 3Material is with further opposing plasma etching.Except aforementioned embodiments, as a kind of other execution mode of the present invention, electric insulation layer 80 can substitute with the electric insulation spacer block with identical function (electrically insulativespacer) (not shown), this electric insulation spacer block can make conductive component 100 and electrical grounding assembly 71 mutual electric insulations, also can play connection or supporting role simultaneously, make the two connection more stable.The electric insulation spacer block can make conductive component 100 be in the state on floating ground similarly.
Understand easily, be used for conductive component 71 and position electrically conductive thereon and parts 95 that can float ground that plasma treatment zone 110 interior plasma restraint devices 70 comprise ground connection.Under this mode, the plasma restraint device has constituted plasma shield (plasma shield) and radio shielding (RF shield).That is, can float the parts on ground constitute plasma shield, can prevent that active particle from therefrom passing through, and the conductive component of ground connection has constituted radio shielding, can prevent that radio-frequency (RF) energy from therefrom passing through.But floating member 95 has defined one group of passage 99, can carry out suction process according to a kind of controllable mode to processing region 110 by them.These passages 99 have certain configuration (dimension), so that quencher (quench) charged particle allows neutral particle to pass through simultaneously.By this way, restraint device 70 can be controlled suction (pumping) operation of processing region 110, in the entire process zone, to produce uniform pressure, prevent that charged particle from entering exhaust outlet 182, prevent RF-coupled to exhaust outlet 182, thereby prevent that plasma from exciting generation at exhaust outlet 182 places, crosstalks but also avoid radio frequency occurring between processing region 110 and 115.
Another characteristic of present embodiment is the shading ring 132 shown in Fig. 2.Shading ring 132 in the vertical directions are movably, shown in arrow d.For substrate is moved into or shift out processing region 110, need this shading ring 132 is moved to the higher position, thereby expose substrate loading and unloading groove 134.After substrate places on the negative electrode, this shading ring is moved to as shown in Figure 2 lower position.On this position, the processing region 110 that is defined by this shading ring 132 is symmetrical circular (symmetrically circular), and loading and unloading groove 134 " is hidden " in shading ring 132 back thereby can not contacted with plasma, and the zone that plasma can touch is the circular boundary (circular boundary) that is defined by this shading ring 132.That is, on lower position, each shading ring has defined a peripheral boundary (peripheral boundary of eachprocessing region) for each processing region.In addition, in the present embodiment, shading ring be make by dielectric material and have certain thickness T, the locular wall and the plasma of ground connection can be isolated (isolate) mutually and come.That is, thickness T can be by reasonable computation and value, thereby can prevent that radio frequency return path (RF returnpath) is from the locular wall 105 of plasma through ground connection.In this way, radio frequency return path Be Controlled gas coming through shower nozzle 170, this gas tip 170 realizes that as top electrode radio frequency returns.
Shading ring 132 can also be used to isostasy (pressure equalizing).Fig. 6 has provided an example of this configuration.Similar among process chamber 600 among Fig. 6 and Fig. 1 and Fig. 2, thus no longer describe in detail herein, and only specify the other inventive features shown in Fig. 6.Embodiment shown in Fig. 6 has shown be provided with isostasy mechanism (pressureequalizing mechanism) between two processing region.In this example, isostasy mechanism realizes by shading ring 632.As shown in the figure, dividing wall 682 is provided with a passage (channel) 684.When shading ring 632 moved to its higher position, shown in arrow d, passage 684 allowed gas freely to pass through between processing region 610 and 615.In addition, in shading ring 632, also be provided with isostasy path (pressure equalizing passage) 634,636.When shading ring places lower position, as shown in Figure 6, isostasy path 634,636 and the passage 684 common paths (passage) of forming.By this mode, the pressure in the processing region 610 and 615 can reach balanced (be equalized) by the path 634,684 and 636 that mutual fluid is communicated with.
Be appreciated that, because the present invention disposes the plasma restriction and radio frequency separates, each processing region can carry out PROCESS FOR TREATMENT separately or a plurality of processing region carries out PROCESS FOR TREATMENT simultaneously concurrently, and a plurality of processing region can have identical plasma treatment condition/environment.Thereby solved the deficiency of " processing platform coupling " (station matching) of the prior art.
Fig. 7 has provided an alternative embodiment of the invention, and wherein two negative electrodes all are applied in a plurality of radio-frequency powers.The embodiment that provides among Fig. 7 can realize by other embodiment that the modification this patent provides, or realizes jointly with other implementation that does not provide herein.The specific embodiment that provides among Fig. 7 has adopted the given embodiment of Fig. 1, and similar parts have been adopted similar number designation, and difference is that they mark parts according to 700 series rather than 100 series.
As shown in Figure 7, each negative electrode 720 and 725 all receives 3 rf frequencies.The purpose of this measure is in order to control etching technics by independent control plasma density and ion energy.That is, one or two frequency can be used to control plasma ion energy.The plasma ion energy frequency should be chosen in the lower scope, as, a frequency is chosen in the 500khz-2MHZ scope, and another selects 13MHZ (the more accurate 13.56MHZ that says so).These frequencies are commonly called offset frequency (bias frequency).The density of plasma can be controlled by higher frequency, and as 27MHZ, 60MHZ, 100MHZ or 160MHZ, this is commonly called source frequency (sourcefrequency).On the other hand, also can adopt single offset frequency and pair of source frequency.For example, the value of single offset frequency can be chosen in the 500khz-2MHZ scope or select 13MHZ.And this value to source frequency can be 27MHZ, 60MHZ, 100MHZ or 160MHZ.
In an object lesson, adopted an offset frequency 754,757, and be set as 2MHZ or 13MHZ, and adopted two source frequencies: the source frequency 752 and 754 and the source frequency 758 and 759 that is used for negative electrode 725 that is used for negative electrode 720.One in the rf frequency of source is set as 27MHZ, and another is set as 60MHZ.This kind configuration can dissociating of article on plasma body particle provide better control.
Another feature of the embodiment that provides among Fig. 7 is diverter switch 763 and 767. Diverter switch 763 and 767 makes present embodiment to switch between a plurality of optional frequencies, thereby can further control dissociating of plasma.By using diverter switch 763 and 767, aforementioned all embodiment can be used to provide phase I technological operation and second stage technological operation in plasma chamber.When the phase I technological operation, adopt first combination of offset frequency and source frequency, when the second stage technological operation, adopt second combination of offset frequency and source frequency.For example, process chamber can use low offset frequency (as, about 2MHZ) to carry out the technology in main etching stage; Then, in order to realize " soft landing ", system will be switched to and be operated under the higher offset frequency, as 13MHZ when over etching.On the other hand, process chamber can adopt lower source frequency to carry out etch step, as adopting 27MHZ; Yet after finishing etching, substrate will be moved out of process chamber, adopt more highdensity plasma to clean to process chamber.More highdensity plasma can the source frequency of high frequency obtains by adopting more, as 60MHZ, 100MHZ or 160MHZ.
Fig. 8 shows an example that adopts two offset frequencies to carry out PROCESS FOR TREATMENT of realizing according to embodiments of the invention.This technology can be, such as, etching one block semiconductor substrate.In step 800, the source radio frequency source is energized with bombardment plasma.The frequency of source radio frequency source can be 27MHZ, 60MHZ, 100MHZ, 160MHZ etc.In step 810, first offset frequency is energized and is applied to process chamber and removes to bombard substrate (first processing step, step 820) to produce dissociating ions.After first processing step was finished, first bias power was disconnected (de-energized) in step 830, and second bias power is energized in step 840, to carry out second processing step 850.In the case, first offset frequency can be about 2MHZ, and second offset frequency is about 13MHZ.In this example, when offset frequency was 2MHZ, source frequency at least should be higher 2 times than it, preferably is embodied as height more than at least 10 times.On the other hand, when offset frequency was 13MHZ, source frequency can be its twice or higher.For example, when offset frequency was 13MHZ, source frequency can be its twice (being 27MHZ), or was its five times (being 60MHZ), or higher (100MHZ or 160MHZ).
Fig. 9 shows an example that adopts two source frequencies to carry out PROCESS FOR TREATMENT of realizing according to embodiments of the invention.For example, this technology can be, such as, etching semiconductor substrate and " original position " cleaning after this.In step 900, the first source radio frequency power source is energized with bombardment plasma.The frequency of this source radio frequency power source can be 27MHZ.In step 810, offset frequency is energized and is applied to process chamber and is used to bombard the dissociating ions of substrate with generation, is used for etching technics step (step 920).After etching process was finished, bias power was disconnected in step 930, and in step 935 substrate was shifted out process chamber.In step 940, activate second source power then to carry out cleaning step (step 950).In the case, the frequency of second source power can be 60MHZ, 100MHZ or 160MHZ.
At last, should be appreciated that technology described herein and technology are not directly related with any specific device, it can be realized with any suitable elements combination.In addition, content that can be in accordance with the teachings of the present invention, various types of general-purpose devices all can be employed.Also can make special equipment and realize described method of this patent and step, and have certain advantage.The present invention describes with reference to concrete execution mode, and its all aspects all should be schematic explanation but not be determinate.The combination that one skilled in the art will recognize that different hardware, software and firmware is all applicable to implementing the present invention.Such as, described software can be described with a variety of programs or script, such as compilation, C/C++, PERL, SHELL, PHP, JAVA or the like.
The present invention describes with reference to embodiment, but its all aspects all should be schematic but not determinate.In addition, by research disclosed inventive features of this patent and enforcement, the technical staff who is familiar with field of the present invention also can relatively easily find out other execution modes.The various aspects of the described execution mode of this patent and/or element can use separately or with combination in any in the plasma chamber technology.The feature of the explanation in specification and the accompanying drawing and execution mode should only be interpreted as exemplary in nature, and true scope of the present invention and spirit then are by defined in the following claims.

Claims (32)

  1. One kind comprise at least two processing regions can be individually or side by side handle the plasma processing chamber of at least two substrates, comprising:
    The process chamber body comprises at least two plasma treatment zones, and each processing region is provided with a negative electrode and is provided with an anode on the top of processing region at the lower position place, and described chamber body comprises the exhaust passage;
    At least one vacuum pump is connected with described exhaust passage;
    At least two radio frequency matching circuits, each radio frequency matching circuit side by side are coupled at least one first rf frequency and one second rf frequency on one of them negative electrode;
    Wherein, first rf frequency is higher than second rf frequency.
  2. 2. plasma processing chamber as claimed in claim 1 also further comprises at least two plasma restraint devices, and each plasma restraint device is positioned near the corresponding negative electrode, is used to prevent that plasma from entering the exhaust passage from processing region.
  3. 3. plasma processing chamber as claimed in claim 2, wherein each plasma restraint device comprises plasma shield and radio shielding.
  4. 4. that plasma processing chamber as claimed in claim 3, described plasma shield comprise conduction but the parts on electric floating ground, described radio shielding comprises the conductive component of ground connection.
  5. 5. plasma processing chamber as claimed in claim 1, also comprise at least two shading rings that movably insulate, each shading ring is positioned at a processing region, and each shading ring defines peripheral boundary for each processing region when shading ring is positioned at its lower position.
  6. 6. plasma processing chamber as claimed in claim 5, wherein said process chamber body is provided with the locular wall of ground connection for each processing region, and the thickness of each shading ring is designed to make the locular wall of ground connection to be shielded by radio-frequency (RF) energy.
  7. 7. plasma processing chamber as claimed in claim 6, wherein each shading ring also comprises at least one isostasy path.
  8. 8. plasma processing chamber as claimed in claim 7, comprise further that also a dividing wall separates two processing regions, described dividing wall comprises an isostasy passage, and described isostasy passage is connected with described isostasy path when shading ring is positioned at its lower position.
  9. 9. plasma processing chamber as claimed in claim 1, also comprise several radio frequency conductors, each radio frequency conductor is coupled to corresponding negative electrode with radio-frequency (RF) energy from described radio frequency matching circuit, each radio frequency conductor comprises that several equally distributed forks are connected with negative electrode, so that in a kind of mode of equilibrium radio-frequency (RF) energy is coupled on the corresponding negative electrode.
  10. 10. plasma processing chamber as claimed in claim 9, wherein each radio frequency matching circuit comprises a high frequency input terminal, a low frequency input terminal, an array output end, between high frequency input terminal and array output end, be coupled with the high frequency match circuit, between low frequency input terminal and array output end, be coupled with the low frequency match circuit, wherein, described high frequency match circuit has high impedance for the second and the 4th rf frequency, described low frequency match circuit for first and the frequent rate of triradius have high impedance.
  11. 11. plasma processing chamber as claimed in claim 10, wherein said first rf frequency is chosen from about 27MHZ, about 60MHZ or about 100MHZ.
  12. 12. plasma processing chamber as claimed in claim 10, wherein second rf frequency is chosen in about 500KHz to 2.2MHZ scope.
  13. 13. as the plasma processing chamber in the claim 1, wherein each radio frequency matching circuit also is coupled to the frequent rate of a triradius one corresponding negative electrode.
  14. 14. the plasma processing chamber as claim 13 kind also comprises several diverter switches, each diverter switch is used for selecting to switch at first, second and third rf frequency.
  15. 15. a parallel plasma etching chamber comprises:
    Conduction chamber body, have first processing region and second processing region, described chamber body also has dividing wall in order to first processing region and second processing region are separated, described chamber body also comprises the exhaust chamber that is communicated with described first processing region and described second process zone fluid, described exhaust chamber has single gas port, described chamber body ground connection;
    Vacuum pump links to each other with described exhaust outlet;
    First fixed negative pole is fixed on the bottom of first processing region, and comprises first chuck and be used for supporting substrate;
    First gas tip is fixed on the top of first processing region, and comprises first electrode;
    Second fixed negative pole is fixed on the bottom of second processing region, and comprises second chuck and be used for supporting substrate;
    Second gas tip is fixed on the top of second processing region, and comprises second electrode;
    Share gas source, for first gas tip and second gas tip provide PROCESS FOR TREATMENT gas;
    First radio frequency matching circuit is simultaneously with at least one low frequency radio frequency frequency and high-frequency radio frequency frequency couple to the first negative electrode;
    Second radio frequency matching circuit is simultaneously with at least one low frequency radio frequency frequency and high-frequency radio frequency frequency couple to the second negative electrode;
    Wherein, the size of described high-frequency radio frequency frequency is the size twice at least of described low frequency radio frequency frequency.
  16. 16. parallel plasma etching as claimed in claim 15 chamber also comprises being positioned near the first plasma restraint device of first negative electrode, is used to prevent that plasma from entering exhaust chamber from first processing region; And be positioned near the second plasma restraint device of second negative electrode, be used to prevent that plasma from entering exhaust chamber from second processing region.
  17. 17. parallel plasma etching as claimed in claim 16 chamber, wherein each first and second plasma restraint device comprises plasma shield and radio shielding.
  18. Parts that 18. parallel plasma etching as claimed in claim 16 chamber, wherein said plasma shield comprise conduction but electric floating ground, described radio shielding comprises the conductive component of ground connection.
  19. 19. parallel plasma etching as claimed in claim 15 chamber also comprises:
    Be arranged in the first removable insulation shading ring of first processing region;
    Be arranged in the second removable insulation shading ring of second processing region;
    Wherein, described first, second removable insulation shading ring is used for substrate load when its higher position, be used for the substrate PROCESS FOR TREATMENT when its lower position.
  20. 20. parallel plasma etching as claimed in claim 19 chamber, wherein said first, second removable insulation shading ring has certain thickness respectively, and the locular wall of ground connection is shielded by radio-frequency (RF) energy.
  21. 21. parallel plasma etching as claimed in claim 20 chamber, wherein the first and second removable insulation shading rings comprise at least one isostasy path respectively.
  22. 22. parallel plasma etching as claimed in claim 21 chamber, wherein said dividing wall comprises an isostasy passage, when the first and second removable insulation shading rings were positioned at its lower position, described isostasy passage was connected with isostasy path on the first and second removable insulation shading rings.
  23. 23. parallel plasma etching as claimed in claim 15 chamber, the scope of wherein said low frequency radio frequency frequency is about 500KHz to 2.2MHZ, and the high-frequency radio frequency frequency can be chosen from about 27MHZ, 60MHZ and 100MHZ.
  24. 24. as the parallel plasma etching chamber in the claim 15, also comprise first diverter switch that is connected with first radio-frequency (RF) match and second diverter switch that is connected with second radio-frequency (RF) match, can pass through
    Each of operating in first and second diverter switches is carried out following selection:
    From two low frequency radio frequency frequencies, select to obtain described low frequency radio frequency frequency; Or
    From two high-frequency radio frequency frequencies, select to obtain described high-frequency radio frequency frequency.
  25. 25. as the parallel plasma etching chamber in the claim 15, each in wherein said first processing region and second processing region all can be independent of another and carry out PROCESS FOR TREATMENT independently.
  26. 26. a decoupling reactive ion etching chamber comprises:
    Conduction chamber body comprises a plurality of processing regions and with the mutual separated dividing wall of a plurality of processing regions, described dividing wall is provided with the fluid passage that is used for the pressure in a plurality of processing regions of balance; Described chamber body also comprises the exhaust chamber of at least one and described a plurality of process zone fluid passages; Described chamber body ground connection;
    At least one vacuum pump links to each other with described exhaust chamber;
    A plurality of negative electrodes, each negative electrode is fixed in the bottom of its corresponding processing region, and comprises that a clamping device is used for supporting substrate;
    A plurality of gas tips, each gas tip is fixed in the top in its respective handling zone, and comprises an electrode;
    Share gas source, for described a plurality of gas tips provide PROCESS FOR TREATMENT gas;
    A plurality of radio-frequency (RF) match, each radio-frequency (RF) match is with at least one low frequency radio frequency frequency and one of them corresponding negative electrode of high-frequency radio frequency frequency feed-in simultaneously.
  27. 27. decoupling reactive ion etching chamber as claimed in claim 26 also comprises a plurality of plasma restraint devices, each plasma restraint device is positioned near its corresponding negative electrode, is used to prevent that plasma from entering exhaust chamber from processing region.
  28. 28. decoupling reactive ion etching chamber as claimed in claim 27, wherein each plasma restraint device comprises plasma shield and radio shielding.
  29. 29. decoupling reactive ion etching chamber as claimed in claim 28, wherein plasma shield comprise conduction but the parts on electric floating ground, radio shielding comprises the conductive component of ground connection.
  30. 30. decoupling reactive ion etching chamber as claimed in claim 26 also comprises a plurality of shading rings that movably insulate, each insulation shading ring is positioned at a processing region, defines the peripheral boundary in respective handling zone when each shading ring is positioned at its low level.
  31. 31. decoupling reactive ion etching chamber as claimed in claim 30, described each insulation shading ring has certain thickness can make the locular wall of ground connection be shielded by radio-frequency (RF) energy.
  32. 32. decoupling reactive ion etching chamber as claimed in claim 31, wherein each insulation shading ring also comprises at least one isostasy path, and when the insulation shading ring was positioned at its low level, described isostasy path was communicated with isostasy passage fluid.
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US11/772,726 US8366829B2 (en) 2005-08-05 2007-07-02 Multi-station decoupled reactive ion etch chamber
KR1020070138741A KR100950116B1 (en) 2007-06-20 2007-12-27 Multi-station decoupled reactive ion etch chamber
JP2008004243A JP4963293B2 (en) 2007-06-20 2008-01-11 Reactive ion etching chamber excluding bonding including multiple processing stations
US13/620,654 US9208998B2 (en) 2005-08-05 2012-09-14 Multi-station decoupled reactive ion etch chamber

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