CN111295739A - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device Download PDF

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Publication number
CN111295739A
CN111295739A CN201880070770.XA CN201880070770A CN111295739A CN 111295739 A CN111295739 A CN 111295739A CN 201880070770 A CN201880070770 A CN 201880070770A CN 111295739 A CN111295739 A CN 111295739A
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CN
China
Prior art keywords
adhesive sheet
pressure
sensitive adhesive
adhesive layer
adhesive
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Granted
Application number
CN201880070770.XA
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Chinese (zh)
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CN111295739B (en
Inventor
冈本直也
阿久津高志
山田忠知
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Lintec Corp
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Lintec Corp
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Publication of CN111295739A publication Critical patent/CN111295739A/en
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Publication of CN111295739B publication Critical patent/CN111295739B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

The present invention relates to a method for manufacturing a semiconductor device, which comprises the following steps (1) to (3) in this order, and which, after step (3), expands expandable particles of an adhesive sheet (a) to separate the adhesive sheet (a) from an adherend. Step (1): stretching the adhesive sheet (B) having the base material (Y2) and the adhesive layer (X2) to expand the distance between the plurality of chips mounted on the adhesive layer (X2) of the adhesive sheet (B); step (2): a step of attaching the pressure-sensitive adhesive layer (X1) of the pressure-sensitive adhesive sheet (A) to the surface of the plurality of chips opposite to the surface in contact with the pressure-sensitive adhesive layer (X2); step (3): and (c) separating the plurality of chips attached to the adhesive sheet (a) from the adhesive sheet (B).

Description

Method for manufacturing semiconductor device
Technical Field
The present invention relates to a method for manufacturing a semiconductor device.
Background
In recent years, electronic devices have been made smaller, lighter, and more functional, and accordingly, semiconductor devices mounted in electronic devices have been required to be made smaller, thinner, and more dense.
Semiconductor chips are sometimes mounted in packages that are close to their size. Such a Package is sometimes called a CSP (Chip Scale Package). As the CSP, there can be mentioned: a WLP (Wafer Level Package) completed by processing in a chip size to a Package final step, a PLP (Panel Level Package) completed by processing in a Panel size larger than the chip size to the Package final step, and the like.
WLPs and PLPs can be classified as Fan-In (Fan-In) and Fan-Out (Fan-Out) types. In fan-out WLP (hereinafter also referred to as "FOWLP") and PLP (hereinafter also referred to as "FOPLP"), a semiconductor chip is covered with a sealing material so as to form a region larger than the chip size, a semiconductor chip sealing body is formed, and a rewiring layer and an external electrode are formed not only on the circuit surface of the semiconductor chip but also on the surface region of the sealing material.
For example, patent document 1 describes a method for manufacturing a semiconductor package, the method including: a semiconductor package is formed by leaving a circuit forming surface of a plurality of semiconductor chips formed by singulating a semiconductor wafer, forming an expanded wafer by surrounding the periphery thereof with a mold member, and extending a rewiring pattern in a region outside the semiconductor chips. In the manufacturing method described in patent document 1, the semiconductor wafer is subjected to a dicing step in which the semiconductor wafer is singulated while being attached to a dicing die attachment tape (hereinafter also referred to as "dicing tape"). The plurality of semiconductor chips obtained in the dicing step are transferred to a spreading wafer mounting tape (hereinafter also referred to as "stretchable tape"), and the stretchable tape is stretched to extend the distance between the plurality of semiconductor chips, thereby performing the spreading step.
The stretchable tape is used for expanding the distance between chips obtained by dicing a workpiece in a manufacturing process of a semiconductor device, and may be used for expanding the distance between chips obtained by dicing, for example, an led (light Emitting diode), an mems (micro Electro Mechanical systems), a ceramic device, a semiconductor package, a semiconductor device having a plurality of devices, or the like, in addition to the above-mentioned semiconductor chips. In either case, the plurality of chips spread at intervals on the stretchable adhesive tape need to be separated from the stretchable adhesive tape in order to be supplied to the next step. Specifically, for example, the semiconductor chip supplied to the expanding step is then supplied to a step of sealing with a sealing resin, but since the sealing resin is usually a thermosetting resin, it is preferable that the semiconductor chip is transferred to a heat-resistant adhesive sheet (hereinafter, also referred to as a "temporary fixing sheet") having heat resistance superior to that of a stretch tape, from the viewpoint of suppressing thermal deformation or the like in the sealing step.
As a method for transferring the chips to another adhesive sheet such as a temporary fixing sheet, there may be a method of directly transferring the chips from the stretchable tape to another adhesive sheet, or a method of separating the chips from the stretchable tape, supplying the chips to a rearrangement step for arranging the chips, and then transferring the chips to another adhesive sheet.
Since the stretch tape is separated from the chip after the pitch of the chip is expanded, an energy ray curable adhesive or the like having a reduced adhesive force after curing by irradiation with an energy ray can be used.
Documents of the prior art
Patent document
Patent document 1: international publication No. 2010/058646
Disclosure of Invention
Problems to be solved by the invention
The stretchable tape using an energy ray-curable adhesive can reduce the adhesive force by irradiation with energy rays, but after irradiation with energy rays, the chip and the adhesive layer are bonded to each other over the entire bonding surface, and therefore a certain degree of adhesive force remains. Therefore, when separating the chips from the stretch tape, the chips 1 need to be picked up one by one or transferred to the adhesive sheet at a time.
For example, in the case of being subjected to the above-described rearrangement step, since it is difficult to move the chips after singulation to the arrangement jig at one time, there is a need to pick up the chips 1 one by one, and this operation is complicated and poor in productivity.
On the other hand, in the case of transferring the pressure-sensitive adhesive sheet to another pressure-sensitive adhesive sheet by the stretch tape, although the plurality of chips can be transferred at one time, if the other pressure-sensitive adhesive sheet is a conventional pressure-sensitive adhesive sheet of a type in which the adhesive strength is reduced by irradiation with energy rays, a certain degree of adhesive strength remains after the irradiation with energy rays as described above, and therefore, there are cases in which: when the separate adhesive sheet is separated from the chip, a certain external force is required, and thus a complicated apparatus is required, or a problem occurs in terms of cleanability due to adhesive residue on the chip. This problem is also the case where the above-described temporary fixing sheet is used as another adhesive sheet, and in this case, when the cured sealing body obtained by sealing the semiconductor chip with the sealing resin on the temporary fixing sheet is separated from the temporary fixing sheet, the above-described complicated apparatus is required, or the obtained cured sealing body has a problem in terms of cleanability.
The present invention has been made in view of the above problems, and an object of the present invention is to provide a method for manufacturing a semiconductor device, in which chips whose spacing is widened by an expanding step can be easily separated from an expandable tape at a time while maintaining the spacing, and the separated chips can be easily supplied to a subsequent step.
Means for solving the problems
The present inventors have found that the above problems can be solved by a method for producing a semiconductor using an expandable adhesive sheet having a substrate containing expandable particles and an adhesive layer, the method comprising specific steps (1) to (3) in this order, and separating the adhesive sheet from an adherend by expanding the expandable particles of the adhesive sheet after the step (3).
That is, the present invention relates to the following [1] to [10 ].
[1] A method for manufacturing a semiconductor device, which comprises using an expandable adhesive sheet (A) having a base material (Y1) containing expandable particles and an adhesive layer (X1),
the method comprises the following steps (1) to (3) in this order, and after the step (3), the expandable particles of the adhesive sheet (A) are expanded to separate the adhesive sheet (A) from the adherend,
step (1): stretching the adhesive sheet (B) having the base material (Y2) and the adhesive layer (X2) to expand the distance between the plurality of chips mounted on the adhesive layer (X2) of the adhesive sheet (B);
step (2): a step of attaching the pressure-sensitive adhesive layer (X1) of the pressure-sensitive adhesive sheet (A) to the surface of the plurality of chips opposite to the surface in contact with the pressure-sensitive adhesive layer (X2);
step (3): and (c) separating the plurality of chips attached to the adhesive sheet (a) from the adhesive sheet (B).
[2] The method for manufacturing a semiconductor device according to [1], wherein the expandable particles are thermally expandable particles having an expansion initiation temperature (t) of 60 to 270 ℃, and the adhesive sheet (A) is separated from an adherend by heating the adhesive sheet (A) after the step (3) to expand the thermally expandable particles.
[3] The method for manufacturing a semiconductor device according to [1] or [2], wherein the adhesive strength of the adhesive layer (X1) of the adhesive sheet (A) before swelling the swellable particles is 0.1 to 10.0N/25 mm.
[4] The method for manufacturing a semiconductor device according to any one of the above [1] to [3], wherein the pressure-sensitive adhesive sheet (A) has a probe tack value of less than 50mN/5mm φ on the surface of the substrate (Y1).
[5] The method for manufacturing a semiconductor device according to any one of [1] to [4], wherein the chip is a semiconductor chip.
[6] The method for manufacturing a semiconductor device according to [5] above, further comprising the steps (4A-1) to (4A-3),
step (4A-1): a step of coating the peripheral portions of the plurality of semiconductor chips on the bonding surfaces of the plurality of semiconductor chips and the pressure-sensitive adhesive layer (X1) with a sealing material, and curing the sealing material to obtain a cured sealing body in which the plurality of semiconductor chips are sealed with the cured sealing material;
step (4A-2): a step of expanding the expandable particles to separate the adhesive sheet (a) from the cured sealing body;
step (4A-3): and (c) forming a rewiring layer on the cured sealing body obtained by separating the adhesive sheet (a).
[7] The method for manufacturing a semiconductor device according to [5] above, further comprising the following steps (4B-1) and (4B-2),
step (4B-1): a step of expanding the expandable particles to separate the adhesive sheet (a) from the plurality of semiconductor chips;
step (4B-2): and (c) aligning the plurality of semiconductor chips separated from the adhesive sheet (a).
[8] The method for manufacturing a semiconductor device according to item [7], wherein the step (4B-2) is a step of aligning the plurality of semiconductor chips separated from the adhesive sheet (A) using an aligning jig having a plurality of housing portions capable of housing the plurality of semiconductor chips.
[9] The method for manufacturing a semiconductor device according to any one of the above [1] to [8], wherein the adhesive sheet (B) has an elongation at break of 100% or more as measured in the MD direction and the CD direction at 23 ℃.
[10] The method for manufacturing a semiconductor device according to any one of [1] to [9], which is a method for manufacturing a fan-out semiconductor device.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, it is possible to provide a method for manufacturing a semiconductor device, in which a chip whose space is widened by an expanding step can be easily separated from an expandable/contractible tape at a time while maintaining the space, and the separated chip can be easily supplied to a subsequent step.
Drawings
Fig. 1 is a sectional view of a double-sided adhesive sheet showing an example of the structure of the double-sided adhesive sheet according to the present embodiment.
Fig. 2 is a sectional view illustrating an example of the manufacturing method according to the present embodiment.
Fig. 3 is a cross-sectional view illustrating an example of the manufacturing method according to the present embodiment, following fig. 2.
Fig. 4 is a cross-sectional view illustrating an example of the manufacturing method according to the present embodiment, following fig. 3.
Fig. 5 is a cross-sectional view illustrating an example of the manufacturing method according to the present embodiment, following fig. 4.
Fig. 6 is a cross-sectional view illustrating an example of the manufacturing method according to the present embodiment, following fig. 5.
Fig. 7 is a cross-sectional view illustrating an example of the manufacturing method according to the present embodiment, following fig. 6.
Fig. 8 is a cross-sectional view illustrating an example of the manufacturing method according to the present embodiment, following fig. 7.
Fig. 9 is a cross-sectional view illustrating an example of the manufacturing method according to the present embodiment, following fig. 8.
Fig. 10 is a cross-sectional view illustrating an example of the manufacturing method according to the present embodiment, following fig. 9.
Fig. 11 is a cross-sectional view illustrating an example of the manufacturing method according to the present embodiment, following fig. 6.
Fig. 12 is a sectional view illustrating an example of the manufacturing method according to the present embodiment.
Fig. 13 is a sectional view illustrating an example of the manufacturing method according to the present embodiment.
FIG. 14 is a plan view showing a biaxial tension expanding device used in the examples.
Description of the symbols
1a adhesive sheet (A)
1b adhesive sheet (A)
10 arrangement clamp
11 accommodating part
11a wall part of the alignment jig
12 frame-shaped body part
20 holding member
40 sealing Material
41 curing the sealing Material
45 peripheral portion of semiconductor chip CP
50 cured seal
50a face
61 st insulating layer
62 nd 2 nd insulating layer
70 rewiring
70A external electrode pad
80 external terminal electrode
100 semiconductor device
200 expansion device
210 holding means
CP semiconductor chip
Side surface of CPa semiconductor chip
W1 circuit plane
W2 circuit
W3 internal terminal electrode
Detailed Description
In the present specification, the "active ingredient" refers to a component other than the diluting solvent among the components contained in the target composition.
The weight average molecular weight (Mw) is a value in terms of standard polystyrene measured by a Gel Permeation Chromatography (GPC) method, and specifically is a value measured by the method described in examples.
In the present specification, "(meth) acrylic" means both acrylic and methacrylic, and other similar terms are used.
In addition, regarding a preferable numerical range (for example, a range of a content or the like), the lower limit value and the upper limit value described in stages may be independently combined. For example, the description of "preferably 10 to 90, more preferably 30 to 60" may be combined with "a preferred lower limit value (10)" and "a more preferred upper limit value (60)" to obtain "10 to 60".
In the present specification, "transfer of a chip" refers to the following operations: after the exposed surface of the chip attached to one adhesive sheet is attached to another adhesive sheet, the one adhesive sheet is separated from the chip, thereby transferring the chip from the one adhesive sheet to the other adhesive sheet.
The method for manufacturing a semiconductor device according to the present embodiment is a method for manufacturing a semiconductor device using an expandable adhesive sheet (A) having a base material (Y1) containing expandable particles and an adhesive layer (X1),
the method comprises the following steps (1) to (3) in this order, and after the step (3), the expandable particles of the adhesive sheet (A) are expanded to separate the adhesive sheet (A) from the adherend,
step (1): stretching the adhesive sheet (B) having the base material (Y2) and the adhesive layer (X2) to expand the distance between the plurality of chips mounted on the adhesive layer (X2) of the adhesive sheet (B);
step (2): a step of attaching the pressure-sensitive adhesive layer (X1) of the pressure-sensitive adhesive sheet (A) to the surface of the plurality of chips opposite to the surface in contact with the pressure-sensitive adhesive layer (X2);
step (3): and (c) separating the plurality of chips attached to the adhesive sheet (a) from the adhesive sheet (B).
The term "chip" used in the present embodiment refers to a material obtained by singulating a workpiece, and the workpiece in the present embodiment refers to a material that is cut in a manufacturing process of a semiconductor device, such as a semiconductor wafer, an LED (Light Emitting Diode), an MEMS (Micro Electro Mechanical Systems), a ceramic device, a semiconductor package, or a silicon wafer having a plurality of devices.
Hereinafter, the adhesive sheet (a) used in the production method of the present embodiment will be described first, and then, the production steps including the steps (1) to (3) will be described.
[ adhesive sheet (A) ]
The pressure-sensitive adhesive sheet (a) is a pressure-sensitive adhesive sheet having expansibility, which comprises a substrate (Y1) containing expandable particles and a pressure-sensitive adhesive layer (X1).
The pressure-sensitive adhesive sheet (a) can keep the pressure-sensitive adhesive property of the pressure-sensitive adhesive layer (X1) high before swelling the swellable particles. Therefore, the adhesive layer (X1) is bonded to the surface exposed surfaces of the plurality of chips on the stretch tape, whereby the plurality of chips are firmly held on the adhesive layer (X1) of the adhesive sheet (a). Thus, the stretch tape can be easily separated from the chip firmly held on the pressure-sensitive adhesive layer (X1) at a time without causing the chip to fall off or the like. On the other hand, when the pressure-sensitive adhesive sheet (a) and the chip are separated from each other, the swelling particles swell to form irregularities on the pressure-sensitive adhesive surface of the pressure-sensitive adhesive layer (X1), whereby the contact area between the pressure-sensitive adhesive surface of the pressure-sensitive adhesive layer (X1) and the chip is reduced, and the adhesive strength can be significantly reduced. As a result, when the adhesive sheet (a) and the chip are separated from each other, the chip can be easily separated at a time without leaving adhesive residue or the like on the chip and while maintaining its cleanness.
Fig. 1(a) and (b) are schematic cross-sectional views of a pressure-sensitive adhesive sheet 1a and a pressure-sensitive adhesive sheet 1b as one embodiment of the pressure-sensitive adhesive sheet (a).
The psa sheet 1a shown in fig. 1(a) has a psa layer (X1) on one side of a substrate (Y1). In the adhesive sheet 1a, the chip on the stretch tape is adhered with the adhesive layer (X1), and the chip is held on the adhesive layer (X1), whereby the stretch tape and the chip are easily separated from each other. When the adhesive sheet 1a is separated from the chip, the expandable particles in the base material (Y1) expand to form irregularities on the surface of the adhesive layer (X1) that contacts the chip, thereby facilitating separation at the interface between the adhesive layer (X1) and the chip.
The psa sheet 1b shown in fig. 1(b) has a psa layer (X1) on one side of a substrate (Y1) and a non-expandable substrate (Y1') on the other side. Although the psa sheet 1b is used in the same manner as the psa sheet 1a, when the expandable particles in the substrate (Y1) are expanded, the presence of the non-expandable substrate (Y1 ') can suppress the occurrence of irregularities on the surface of the substrate (Y1) on the non-expandable substrate (Y1') side, and thus can more effectively form irregularities on the surface on the psa layer (X1) side.
The structure of the pressure-sensitive adhesive sheet (a) is not limited to the structure shown in fig. 1(a) and (b), and may be, for example, a structure having another layer between the substrate (Y1) and the pressure-sensitive adhesive layer (X1). Among them, from the viewpoint of producing a pressure-sensitive adhesive sheet that can be separated with a small force, it is preferable to have a structure in which the substrate (Y1) and the pressure-sensitive adhesive layer (X1) are directly laminated. Further, the substrate (Y1) may have another pressure-sensitive adhesive layer on the surface thereof opposite to the pressure-sensitive adhesive layer (X1).
The pressure-sensitive adhesive sheet (a) may have a release agent on the pressure-sensitive adhesive layer (X1). When the adhesive sheet (a) is used in the production method of the present embodiment, the release agent is appropriately peeled and removed.
The shape of the pressure-sensitive adhesive sheet (a) may take any of sheet, tape, label and the like.
(substrate (Y1))
The substrate (Y1) of the pressure-sensitive adhesive sheet (a) is a non-adhesive substrate containing expandable particles.
In the present invention, the judgment of whether or not a non-adhesive substrate is present is performed as follows: the probe tack value was measured on the surface of the target substrate based on JIS Z0237:1991, and if the measured probe tack value was less than 50mN/5mm φ, the substrate was judged as "non-adhesive substrate".
Here, the probe tack value of the surface of the substrate (Y1) used in the present embodiment is usually less than 50mN/5mm, preferably less than 30mN/5mm, more preferably less than 10mN/5mm, and still more preferably less than 5mN/5 mm.
In the present specification, the method described in examples was used as a specific method for measuring the probe tack value on the surface of the substrate (Y1).
Since the adhesive sheet (a) contains the expandable particles in the non-adhesive resin having a high elastic modulus, not in the adhesive layer, the freedom of design such as adjustment of the thickness of the adhesive layer (X1) on which the chip is mounted, control of the adhesive force, the viscoelastic coefficient, and the like is improved. This can suppress the occurrence of positional deviation of the chip. Further, in the case of using the adhesive sheet (a), since the chips are placed on the adhesive surface of the adhesive layer (X1), the base material (Y1) containing the expandable particles and the chips do not come into direct contact. This makes it possible to prevent residues from the expandable particles and a part of the pressure-sensitive adhesive layer that is significantly deformed from adhering to the chip and to prevent the uneven shape formed on the expandable pressure-sensitive adhesive layer from being transferred to the chip, and to supply the chip to the next step while maintaining cleanliness.
The thickness of the base material (Y1) is preferably 10 to 1000 μm, more preferably 20 to 500 μm, still more preferably 25 to 400 μm, and still more preferably 30 to 300 μm.
In the present specification, the thickness of the base material (Y1) is a value measured by the method described in the examples.
The base material (Y1) may be formed of the resin composition (Y1). The respective components contained in the resin composition (Y1) as a material for forming the base material (Y1) will be described below.
[ expansive particles ]
The pressure-sensitive adhesive sheet (a) is a pressure-sensitive adhesive sheet in which the substrate (Y1) contains expandable particles.
The expandable particles are not particularly limited as long as they are particles that can expand themselves under an external stimulus to form irregularities on the adhesive surface of the pressure-sensitive adhesive layer (X1) and reduce the adhesive strength with an adherend.
Examples of the expandable particles include thermally expandable particles that expand by heating, and energy ray expandable particles that expand by irradiation with energy rays, and the like, but from the viewpoint of versatility and workability, thermally expandable particles are preferable.
The expansion starting temperature (t) of the thermally expandable particles is preferably 60 to 270 ℃, more preferably 70 to 260 ℃, and still more preferably 80 to 250 ℃.
In the present specification, the expansion start temperature (t) of the thermally expandable particles is a value measured by the following method.
[ method for measuring expansion initiation temperature (t) of thermally expandable particles ]
A sample was prepared by placing 0.5mg of thermally expandable particles to be measured in an aluminum cup having a diameter of 6.0mm (inner diameter: 5.65mm) and a depth of 4.8mm, and placing an aluminum cap (diameter: 5.6mm and thickness: 0.1mm) from above.
The height of the sample was measured using a dynamic viscoelasticity measuring apparatus in a state where a force of 0.01N was applied to the sample from the upper portion of the aluminum cap through the pressure head. Then, the sample was heated from 20 ℃ to 300 ℃ at a temperature rising rate of 10 ℃/min with a force of 0.01N applied by the indenter, and the amount of displacement of the indenter in the vertical direction was measured, and the displacement start temperature in the positive direction was set as the expansion start temperature (t).
The heat-expandable particles are preferably microencapsulated blowing agents composed of a shell made of a thermoplastic resin and an encapsulated component encapsulated in the shell and vaporized when heated to a predetermined temperature.
Examples of the thermoplastic resin constituting the shell of the microencapsulated blowing agent include: vinylidene chloride-acrylonitrile copolymers, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polysulfone, and the like.
Examples of the inner component to be enclosed in the outer shell include: propane, butane, pentane, hexane, heptane, octane, nonane, decane, isobutane, isopentane, isohexane, isoheptane, isooctane, isononane, isodecane, cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane, neopentane, dodecane, isododecane, cyclotridecane, hexylcyclohexane, tridecane, tetradecane, pentadecane, hexadecane, heptadecane, octadecane, nonadecane, isotridecane, 4-methyldodecane, isotetradecane, isopentadecane, isohexadecane, 2,4,4,6,8, 8-heptamethylnonane, isoheptadecane, isooctadecane, isononane, 2,6,10, 14-tetramethylpentadecane, cyclotridecane, heptylcyclohexane, n-octylcyclohexane, cyclopentadecane, nonylcyclohexane, or, Decylcyclohexane, pentadecylcyclohexane, hexadecylcyclohexane, heptadecylcyclohexane, octadecylcyclohexane, and the like. These inclusion components can be used alone, also can be combined with 2 or more.
The expansion starting temperature (t) of the thermally expandable particles can be adjusted by appropriately selecting the type of the encapsulated component.
The maximum volume expansion ratio when heated to a temperature not lower than the thermal expansion starting temperature (t) of the thermally expandable particles is preferably 1.5 to 100 times, more preferably 2 to 80 times, still more preferably 2.5 to 60 times, and still more preferably 3 to 40 times.
The average particle diameter of the expandable particles before expansion at 23 ℃ is preferably 3 to 100 μm, more preferably 4 to 70 μm, further preferably 6 to 60 μm, and further preferably 10 to 50 μm.
The average particle diameter of the expandable particles before expansion is referred to as a volume-median particle diameter (D)50) The cumulative volume frequency obtained by calculation from the smaller particle diameter of the expandable particles before expansion in the particle distribution of the expandable particles before expansion, which is measured by a laser diffraction particle size distribution measuring apparatus (for example, product name "Master Sizer 3000" manufactured by Malvern), corresponds to a particle diameter of 50%.
The expandable particles before expansion had a particle diameter of 90% (D) at 23 ℃90) Preferably 10 to 150 μm, more preferably 20 to 100 μm, further preferably 25 to 90 μm, and further preferably 30 to 80 μm.
The expandable particles before expansion had a particle diameter of 90% (D)90) The particle size is a particle size whose cumulative volume frequency calculated from the smaller particle size of the expandable particles before expansion in the particle distribution of the expandable particles before expansion, which is measured by a laser diffraction particle size distribution measuring apparatus (for example, product name "Master Sizer 3000" manufactured by Malvern corporation), corresponds to 90%.
The content of the expandable particles is preferably 1 to 40 mass%, more preferably 5 to 35 mass%, still more preferably 10 to 30 mass%, and yet more preferably 15 to 25 mass% with respect to the total amount (100 mass%) of the active ingredients in the base material (Y1).
[ resin ]
The resin contained in the resin composition (Y1) is not particularly limited as long as it is a resin that makes the substrate (Y1) non-adhesive, and may be a non-adhesive resin or an adhesive resin. That is, even if the resin contained in the resin composition (Y1) is an adhesive resin, it is sufficient if the adhesive resin and the polymerizable compound undergo a polymerization reaction in the process of forming the base material (Y1) from the resin composition (Y1) to obtain a resin that becomes a non-adhesive resin, thereby making the base material (Y1) containing the resin non-adhesive.
The weight average molecular weight (Mw) of the resin contained in the resin composition (y1) is preferably 1,000 to 100 ten thousand, more preferably 1,000 to 70 ten thousand, and still more preferably 1,000 to 50 ten thousand.
When the resin is a copolymer having 2 or more kinds of structural units, the form of the copolymer is not particularly limited, and may be any of a block copolymer, a random copolymer, and a graft copolymer.
The content of the resin is preferably 50 to 99% by mass, more preferably 60 to 95% by mass, even more preferably 65 to 90% by mass, and even more preferably 70 to 85% by mass, based on the total amount (100% by mass) of the active ingredients in the resin composition (y 1).
The resin contained in the resin composition (y1) preferably contains at least one selected from the group consisting of an acrylic urethane resin and an olefin resin. As the acrylic urethane-based resin, an acrylic urethane-based resin (U1) obtained by polymerizing a Urethane Prepolymer (UP) and a vinyl compound containing a (meth) acrylate is preferable.
[ urethane acrylate resin (U1) ]
The Urethane Prepolymer (UP) forming the main chain of the acrylic urethane resin (U1) includes a reaction product of a polyol and a polyisocyanate.
The Urethane Prepolymer (UP) is preferably obtained by further performing a chain extension reaction using a chain extender.
Examples of the polyol to be a raw material of the Urethane Prepolymer (UP) include: alkylene polyols, ether polyols, ester polyols, esteramide polyols, ester/ether polyols, carbonate polyols, and the like.
These polyhydric alcohols may be used alone, or 2 or more kinds may be used in combination.
The polyol used in the present embodiment is preferably a diol, more preferably an ester diol, an alkylene diol, and a carbonate diol, and even more preferably an ester diol or a carbonate diol.
Examples of the ester diol include: from alkanediols such as 1, 3-propanediol, 1, 4-butanediol, 1, 5-pentanediol, neopentyl glycol, and 1, 6-hexanediol; a polycondensate of one or more kinds selected from the group consisting of alkylene glycols such as ethylene glycol, propylene glycol, diethylene glycol and dipropylene glycol and one or more kinds selected from the group consisting of dicarboxylic acids such as phthalic acid, isophthalic acid, terephthalic acid, naphthalenedicarboxylic acid, 4-diphenyldicarboxylic acid, diphenylmethane-4, 4' -dicarboxylic acid, succinic acid, adipic acid, azelaic acid, sebacic acid, chlorendic acid, maleic acid, fumaric acid, itaconic acid, 1, 3-cyclohexanedicarboxylic acid, 1, 4-cyclohexanedicarboxylic acid, hexahydrophthalic acid, hexahydroisophthalic acid, hexahydroterephthalic acid and methylhexahydrophthalic acid, and anhydrides thereof.
Specifically, there may be enumerated: polyethylene adipate glycol, polybutylene adipate glycol, polyhexamethylene isophthalate glycol, polyheptaethylene glycol adipate glycol, polyethylene glycol adipate glycol, polybutylene glycol hexamethylene adipate glycol, polyethylene glycol adipate glycol, polytetramethylene ether adipate glycol, poly (3-methylpentaneadipate) glycol, polyethylene glycol azelate glycol, polyethylene glycol sebacate glycol, polybutylene azelate glycol, polybutylene sebacate glycol, and polyethylene glycol terephthalate glycol.
Examples of alkylene glycols include: alkanediols such as 1, 3-propanediol, 1, 4-butanediol, 1, 5-pentanediol, neopentyl glycol, and 1, 6-hexanediol; alkylene glycols such as ethylene glycol, propylene glycol, diethylene glycol, and dipropylene glycol; polyalkylene glycols such as polyethylene glycol, polypropylene glycol, and polybutylene glycol; polyoxyalkylene glycols such as polytetramethylene glycol; and so on.
Examples of the carbonate diol include: 1, 4-butanediol carbonate, 1, 5-pentanediol carbonate, 1, 6-hexanediol carbonate, 1, 2-propanediol carbonate, 1, 3-propanediol carbonate, 2-dimethylpropanediol carbonate, 1, 7-heptanediol carbonate, 1, 8-octanediol carbonate, 1, 4-cyclohexanediol carbonate, and the like.
Examples of the polyisocyanate used as a raw material of the Urethane Prepolymer (UP) include aromatic polyisocyanates, aliphatic polyisocyanates, and alicyclic polyisocyanates.
These polyisocyanates may be used alone, or 2 or more kinds may be used in combination.
These polyisocyanates may be trimethylolpropane adduct type modified products, biuret type modified products obtained by reaction with water, or isocyanurate type modified products containing a isocyanurate ring.
Among these, the polyisocyanate used in one embodiment of the present invention is preferably a diisocyanate, and more preferably at least one selected from the group consisting of 4,4' -diphenylmethane diisocyanate (MDI), 2, 4-toluene diisocyanate (2,4-TDI), 2, 6-toluene diisocyanate (2,6-TDI), hexamethylene diisocyanate (HMDI), and alicyclic diisocyanate.
Examples of the alicyclic diisocyanate include: 3-isocyanatomethyl-3, 5, 5-trimethylcyclohexyl isocyanate (isophorone diisocyanate, IPDI), 1, 3-cyclopentane diisocyanate, 1, 3-cyclohexane diisocyanate, 1, 4-cyclohexane diisocyanate, methyl-2, 6-cyclohexane diisocyanate and the like, with isophorone diisocyanate (IPDI) being preferred.
In the present embodiment, the Urethane Prepolymer (UP) forming the main chain of the acrylic urethane resin (U1) is a reaction product of a diol and a diisocyanate, and is preferably a linear urethane prepolymer having an ethylenically unsaturated group at both ends.
Examples of the method for introducing an ethylenically unsaturated group into both ends of the linear urethane prepolymer include: a method of reacting a terminal NCO group of a linear urethane prepolymer formed by reacting a diol with a diisocyanate compound with a hydroxyalkyl (meth) acrylate.
Examples of the hydroxyalkyl (meth) acrylate include: 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, and the like.
The branched vinyl compound forming the acrylic urethane resin (U1) contains at least a (meth) acrylate.
The (meth) acrylate is preferably 1 or more selected from alkyl (meth) acrylates and hydroxyalkyl (meth) acrylates, and more preferably a combination of an alkyl (meth) acrylate and a hydroxyalkyl (meth) acrylate is used.
When the alkyl (meth) acrylate and the hydroxyalkyl (meth) acrylate are used in combination, the mixing ratio of the hydroxyalkyl (meth) acrylate to 100 parts by mass of the alkyl (meth) acrylate is preferably 0.1 to 100 parts by mass, more preferably 0.5 to 30 parts by mass, still more preferably 1.0 to 20 parts by mass, and still more preferably 1.5 to 10 parts by mass.
The alkyl group of the alkyl (meth) acrylate has preferably 1 to 24 carbon atoms, more preferably 1 to 12 carbon atoms, still more preferably 1 to 8 carbon atoms, and still more preferably 1 to 3 carbon atoms.
Examples of the hydroxyalkyl (meth) acrylate include the same hydroxyalkyl (meth) acrylates used for introducing an ethylenically unsaturated group into both ends of the linear urethane prepolymer.
Examples of the vinyl compound other than the (meth) acrylic acid ester include aromatic hydrocarbon vinyl compounds such as styrene, α -methylstyrene and vinyltoluene, vinyl ethers such as methyl vinyl ether and ethyl vinyl ether, polar group-containing monomers such as vinyl acetate, vinyl propionate, (meth) acrylonitrile, N-vinylpyrrolidone, (meth) acrylic acid, maleic acid, fumaric acid, itaconic acid and (meth) acrylamide, and the like.
These vinyl compounds may be used alone, or 2 or more of them may be used in combination.
The content of the (meth) acrylate in the vinyl compound is preferably 40 to 100% by mass, more preferably 65 to 100% by mass, even more preferably 80 to 100% by mass, and even more preferably 90 to 100% by mass, based on the total amount (100% by mass) of the vinyl compound.
The total content of the alkyl (meth) acrylate and the hydroxyalkyl (meth) acrylate in the vinyl compound is preferably 40 to 100% by mass, more preferably 65 to 100% by mass, even more preferably 80 to 100% by mass, and even more preferably 90 to 100% by mass, based on the total amount (100% by mass) of the vinyl compound.
The urethane acrylate resin (U1) used in the present embodiment can be obtained by mixing the Urethane Prepolymer (UP) with a vinyl compound containing a (meth) acrylate and polymerizing both.
In this polymerization, it is preferable to further add a radical initiator.
In the acrylic urethane resin (U1) used in the present embodiment, the content ratio of the structural unit (U11) derived from the Urethane Prepolymer (UP) to the structural unit (U12) derived from the vinyl compound [ (U11)/(U12) ] is preferably 10/90 to 80/20, more preferably 20/80 to 70/30, still more preferably 30/70 to 60/40, and still more preferably 35/65 to 55/45 in terms of mass ratio.
[ olefin resin ]
As the resin contained in the resin composition (y1), an olefin-based resin is preferably a polymer having at least a structural unit derived from an olefin monomer.
The olefin monomer is preferably an α -olefin having 2 to 8 carbon atoms, and specific examples thereof include ethylene, propylene, butene, isobutylene, and 1-hexene.
Among them, ethylene and propylene are preferable.
Specific examples of the olefin-based resin include: ultra-low density polyethylene (VLDPE, density: 880 kg/m)3Above and below 910kg/m3) Low density polyethylene (LDPE, density: 910kg/m3Above and below 915kg/m3) Medium density polyethylene (MDPE, density: 915kg/m3Above and below 942kg/m3) High density polyethylene (HDPE, density: 942kg/m3The above), linear low-density polyethylene, and other polyethylene resins; polypropylene resin (PP); polybutene resin (PB); ethylene-propylene copolymers; olefin-based elastomers (TPO); poly (4-methyl-1-pentene) (PMP); ethylene-vinyl acetate copolymers (EVA); ethylene vinyl alcohol copolymers (EVOH); olefin terpolymers such as ethylene-propylene- (5-ethylidene-2-norbornene); and so on.
In the present embodiment, the olefin-based resin may be a modified olefin-based resin obtained by further modifying at least one selected from the group consisting of acid modification, hydroxyl modification, and acryloyl modification.
For example, as the acid-modified olefin-based resin obtained by acid-modifying an olefin-based resin, there can be mentioned a modified polymer obtained by graft-polymerizing an unsaturated carboxylic acid or an acid anhydride thereof onto the above-mentioned unmodified olefin-based resin.
Examples of the unsaturated carboxylic acid or anhydride thereof include: maleic acid, fumaric acid, itaconic acid, citraconic acid, glutaconic acid, tetrahydrophthalic acid, aconitic acid, (meth) acrylic acid, maleic anhydride, itaconic anhydride, glutaconic anhydride, citraconic anhydride, aconitic anhydride, nadic anhydride, tetrahydrophthalic anhydride, and the like.
The unsaturated carboxylic acid or anhydride thereof may be used alone, or 2 or more kinds thereof may be used in combination.
Examples of the acryl-modified olefin resin obtained by acryl-modifying an olefin resin include a modified polymer obtained by graft-polymerizing an alkyl (meth) acrylate as a side chain onto the above-mentioned unmodified olefin resin as a main chain.
The alkyl group of the alkyl (meth) acrylate has preferably 1 to 20 carbon atoms, more preferably 1 to 16 carbon atoms, and still more preferably 1 to 12 carbon atoms.
Examples of the alkyl (meth) acrylate include those similar to those of the compounds described later which can be selected as the monomer (a 1').
Examples of the hydroxyl-modified olefin-based resin obtained by modifying an olefin-based resin with a hydroxyl group include modified polymers obtained by graft-polymerizing a hydroxyl-containing compound onto the above-mentioned unmodified olefin-based resin as a main chain.
Examples of the hydroxyl group-containing compound include: hydroxyalkyl (meth) acrylates such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl (meth) acrylate, and 4-hydroxybutyl (meth) acrylate; unsaturated alcohols such as vinyl alcohol and allyl alcohol.
[ urethane acrylate resin and resin other than olefin resin ]
In the present embodiment, the resin composition (y1) may contain a resin other than the acrylic urethane resin and the olefin resin, within a range not impairing the effects of the present invention.
Examples of such resins include: vinyl resins such as polyvinyl chloride, polyvinylidene chloride and polyvinyl alcohol; polyester resins such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; polystyrene; acrylonitrile-butadiene-styrene copolymers; cellulose triacetate; a polycarbonate; polyurethanes that do not belong to the group of acrylic urethane resins; polysulfones; polyether ether ketone; polyether sulfone; polyphenylene sulfide; polyimide resins such as polyetherimide and polyimide; a polyamide-based resin; acrylic resin; fluorine resins, and the like.
The content of the resin other than the acrylic urethane resin and the olefin resin is preferably less than 30 parts by mass, more preferably less than 20 parts by mass, still more preferably less than 10 parts by mass, yet still more preferably less than 5 parts by mass, and yet still more preferably less than 1 part by mass, based on 100 parts by mass of the total amount of the resins contained in the resin composition (y 1).
[ additive for base Material ]
The resin composition (y1) may contain an additive for substrates contained in a substrate of a general pressure-sensitive adhesive sheet within a range not to impair the effects of the present invention.
Examples of such additives for a base material include: ultraviolet ray absorber, light stabilizer, antioxidant, antistatic agent, slipping agent, anti-blocking agent, colorant, etc.
These additives for base materials may be used alone or in combination of 2 or more.
When these additives for base materials are contained, the content of each additive for base materials is preferably 0.0001 to 20 parts by mass, more preferably 0.001 to 10 parts by mass, based on 100 parts by mass of the resin in the resin composition (y 1).
[ solventless resin composition (y 1') ]
As one embodiment of the resin composition (y1) used in the present embodiment, there is exemplified a solvent-free resin composition (y 1') in which an oligomer having an ethylenically unsaturated group and having a weight average molecular weight (Mw) of 50000 or less, an energy ray-polymerizable monomer, and the above-mentioned expandable particles are blended, and a solvent is not blended.
In the solventless resin composition (y 1'), although no solvent is blended, the energy ray-polymerizable monomer contributes to improvement of plasticity of the oligomer.
The coating film formed from the solvent-free resin composition (Y1') was irradiated with energy rays, whereby a substrate (Y1) was obtained.
The type, shape, and amount (content) of the expandable particles to be blended in the solvent-free resin composition (y 1') are as described above.
The oligomer contained in the solventless resin composition (y 1') has a weight average molecular weight (Mw) of 50000 or less, preferably 1000 to 50000, more preferably 2000 to 40000, still more preferably 3000 to 35000, and still more preferably 4000 to 30000.
The oligomer may be any oligomer having an ethylenically unsaturated group with a weight average molecular weight (Mw) of 50000 or less in the resin contained in the resin composition (y1), and is preferably the Urethane Prepolymer (UP).
As the oligomer, a modified olefin-based resin having an ethylenically unsaturated group or the like can be used.
The total content of the oligomer and the energy ray polymerizable monomer in the solventless resin composition (y1 ') is preferably 50 to 99% by mass, more preferably 60 to 95% by mass, even more preferably 65 to 90% by mass, and even more preferably 70 to 85% by mass, based on the total amount (100% by mass) of the solventless resin composition (y 1').
Examples of the energy ray-polymerizable monomer include: alicyclic polymerizable compounds such as isobornyl (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyloxy (meth) acrylate, cyclohexyl (meth) acrylate, adamantyl (meth) acrylate, and tricyclodecanyl acrylate; aromatic polymerizable compounds such as phenyl hydroxypropyl acrylate, benzyl acrylate, and phenol ethylene oxide-modified acrylate; heterocyclic polymerizable compounds such as tetrahydrofurfuryl (meth) acrylate, morpholinyl acrylate, N-vinylpyrrolidone and N-vinylcaprolactam.
These energy ray-polymerizable monomers may be used alone, or 2 or more of them may be used in combination.
In the solventless resin composition (y 1'), the content ratio of the oligomer to the energy ray polymerizable monomer (the oligomer/energy ray polymerizable monomer) is preferably 20/80 to 90/10, more preferably 30/70 to 85/15, and further preferably 35/65 to 80/20 in terms of mass ratio.
In the present embodiment, the solvent-free resin composition (y 1') is preferably further compounded with a photopolymerization initiator.
By containing a photopolymerization initiator, the curing reaction can be sufficiently performed by irradiation with a low-energy ray.
Examples of the photopolymerization initiator include: 1-hydroxycyclohexyl phenyl ketone, benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether, benzyl phenyl sulfide, tetramethyl thiuram monosulfide, azobisisobutyronitrile, bibenzyl, diacetyl, 8-chloroanthraquinone, and the like.
These photopolymerization initiators may be used alone, or 2 or more of them may be used in combination.
The amount of the photopolymerization initiator is preferably 0.01 to 5 parts by mass, more preferably 0.01 to 4 parts by mass, and still more preferably 0.02 to 3 parts by mass, based on the total amount (100 parts by mass) of the oligomer and the energy ray-polymerizable monomer.
From the viewpoint of improving interlayer adhesion between the substrate (Y1) and another layer to be laminated, the surface of the substrate (Y1) may be subjected to surface treatment or undercoating treatment by an oxidation method, an embossing method, or the like. Examples of the oxidation method include corona discharge treatment, plasma discharge treatment, chromic acid treatment (wet method), hot air treatment, ozone treatment, and ultraviolet irradiation treatment, and examples of the concavo-convex method include sand blast method and solvent treatment method.
[ storage modulus of substrate (Y1) ]
The storage modulus E' (23) of the substrate (Y1) at 23 ℃ is preferably 1.0X 106Pa or more, more preferably 5.0X 106～5.0×1012Pa, more preferably 1.0X 107～1.0×1012Pa, more preferably 5.0X 107～1.0×1011Pa, still more preferably 1.0X 108～1.0×1010Pa. By using the base material (Y1) having the storage modulus E' (23) within the above range, the positional displacement of the semiconductor chip can be prevented, and the chip can be prevented from sinking into the adhesive layer (X1).
In the present specification, the storage modulus E' of the base material (Y1) at a given temperature is a value measured by the method described in examples.
The storage modulus of the base material (Y1) preferably satisfies the following requirement (1).
Essential element (1): the storage modulus E' (100) of the substrate (Y1) at 100 ℃ was 2.0X 105Pa or above.
By providing the base material (Y1) satisfying the requirement (1), even in the temperature environment of the sealing step in the production process of FOWLP and FOPLP, when the chip is sealed on the pressure-sensitive adhesive sheet (a), the flow of the expandable particles can be appropriately suppressed, and therefore, the adhesive surface of the pressure-sensitive adhesive layer (X1) provided on the base material (Y1) is less likely to be deformed. As a result, the positional displacement of the semiconductor chip can be prevented, and the chip can be prevented from sinking into the adhesive layer (X1).
From the above viewpoint, the storage modulus E' (100) of the base material (Y1) is more preferably 4.0 × 105Pa or more, preferably 6.0X 105Pa or more, more preferably 8.0X 105Pa or more, and still more preferably 1.0X 106Pa or above.
In addition, the storage modulus E' (100) of the base material (Y1) is preferably 1.0 × 10 from the viewpoint of effectively suppressing the positional deviation of the chip in the sealing step12Pa or less, more preferably 1.0X 1011Pa or less, more preferably 1.0X 1010Pa or less, more preferably 1.0X 109Pa or less.
When the substrate (Y1) of the pressure-sensitive adhesive sheet of the present embodiment contains thermally expandable particles as the expandable particles, the storage modulus preferably satisfies the following requirement (2).
Essential element (2): the storage modulus E' (t) of the base material (Y1) at the expansion initiation temperature (t) of the thermally expandable particles is 1.0X 107Pa or less.
By providing the substrate (Y1) satisfying the requirement (2), the substrate (Y1) is easily deformed following the volume expansion of the thermally expandable particles at a temperature at which the thermally expandable particles expand, and irregularities are easily formed on the adhesive surface of the pressure-sensitive adhesive layer (X1). This makes it possible to separate the object from the object with a small external force.
From the above viewpointThe storage modulus E' (t) of the base material (Y1) is more preferably 9.0X 106Pa or less, more preferably 8.0X 106Pa or less, more preferably 6.0X 106Pa or less, and still more preferably 4.0X 106Pa or less.
In addition, the storage modulus E' (t) of the base material (Y1) is preferably 1.0 × 10 from the viewpoint of suppressing the flow of the thermally expandable particles after expansion, improving the shape retention of the irregularities formed on the adhesive surface of the pressure-sensitive adhesive layer (X1), and further improving the separability3Pa or more, more preferably 1.0X 104Pa or more, preferably 1.0X 105Pa or above.
(non-swelling substrate (Y1'))
The pressure-sensitive adhesive sheet (a) may have a pressure-sensitive adhesive layer (X1) on one side of a substrate (Y1) and a non-expandable substrate (Y1') on the other side.
The definition of "non-expandable substrate" in this specification is as follows: when the pressure-sensitive adhesive sheet (A) is treated under conditions such that the expandable particles contained therein expand, the volume change rate calculated from the following formula is less than 5 vol%.
Volume change ratio (%) (volume of the layer after treatment-volume of the layer before treatment)/volume of the layer before treatment × 100
The volume change (%) of the non-expandable substrate (Y1') calculated from the above formula is preferably less than 2 vol%, more preferably less than 1 vol%, still more preferably less than 0.1 vol%, and yet more preferably less than 0.01 vol%.
The conditions under which the expandable particles expand are conditions under which, when the expandable particles are thermally expandable particles, a heating treatment is performed at an expansion start temperature (t) for 3 minutes.
The non-expandable substrate (Y1 ') may contain expandable particles, but the smaller the content, the better, the less the content is usually 3 mass%, preferably less than 1 mass%, more preferably less than 0.1 mass%, still more preferably less than 0.01 mass%, still more preferably less than 0.001 mass%, and most preferably no expandable particles are contained with respect to the total mass (100 mass%) of the non-expandable substrate (Y1').
Examples of the material for forming the non-expandable substrate (Y1') include paper, resin, and metal.
Examples of the paper include: tissue paper, medium grade paper, fully pulped paper, impregnated paper, coated paper, parchment paper, glassine paper and the like.
Examples of the resin include: polyolefin resins such as polyethylene and polypropylene; vinyl resins such as polyvinyl chloride, polyvinylidene chloride, polyvinyl alcohol, ethylene-vinyl acetate copolymers, and ethylene-vinyl alcohol copolymers; polyester resins such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; polystyrene; acrylonitrile-butadiene-styrene copolymers; cellulose triacetate; a polycarbonate; urethane resins such as polyurethane and acrylic-modified polyurethane; polymethylpentene; polysulfones; polyether ether ketone; polyether sulfone; polyphenylene sulfide; polyimide resins such as polyetherimide and polyimide; a polyamide-based resin; an acrylic resin; fluorine resins, and the like.
Examples of the metal include: aluminum, tin, chromium, titanium, and the like.
These forming materials may be composed of one kind, or 2 or more kinds may be used in combination.
Examples of the non-expandable substrate (Y1') using 2 or more types of forming materials in combination include a substrate obtained by laminating paper materials with a thermoplastic resin such as polyethylene, and a substrate obtained by forming a metal film on the surface of a resin film or sheet containing a resin.
As a method for forming the metal layer, for example, there can be mentioned: a method of depositing the metal by a PVD method such as vacuum deposition, sputtering, or ion plating; or a method of attaching a metal foil made of the above metal using a general adhesive.
When the pressure-sensitive adhesive sheet (a) has a non-expandable substrate (Y1 '), the thickness ratio [ (Y1)/(Y1 ') ] between the expandable substrate (Y1) and the non-expandable substrate (Y1 ') before the expandable particles are expanded is preferably 0.02 to 200, more preferably 0.03 to 150, and still more preferably 0.05 to 100.
From the viewpoint of improving interlayer adhesion between the non-expandable substrate (Y1 ') and another layer to be laminated, when the non-expandable substrate (Y1 ') is made of a resin, the surface of the non-expandable substrate (Y1 ') may be subjected to a surface treatment or a primer treatment by an oxidation method, an embossing method, or the like, as in the case of the substrate (Y1).
When the non-expandable substrate (Y1') is composed of a resin, the resin may be contained, and the above-mentioned substrate additive that can be contained in the resin composition (Y1) may be contained.
(adhesive layer (X1))
The adhesive layer (X1) is a layer having adhesiveness. The pressure-sensitive adhesive layer (X1) contains a pressure-sensitive adhesive resin and may contain, if necessary, a pressure-sensitive adhesive additive such as a crosslinking agent, a tackifier, a polymerizable compound, or a polymerization initiator.
The adhesive force of the adhesive surface of the adhesive layer (X1) is preferably 0.1 to 10.0N/25mm, more preferably 0.2 to 8.0N/25mm, further preferably 0.4 to 6.0N/25mm, and further preferably 0.5 to 4.0N/25mm at 23 ℃ before the swelling of the swellable particles. If the adhesive force is 0.1N/25mm or more, the adhesive force can be firmly bonded to the chip on the stretch tape, and therefore, the stretch tape can be easily separated from the chip. On the other hand, if the adhesive force is 10.0N/25mm or less, the separation can be easily performed with a slight force when separating from the chip.
The adhesive force is a value measured by the method described in examples.
The shear modulus G' (23) of the adhesive layer (X1) at 23 ℃ is preferably 1.0X 104～1.0×108Pa, more preferably 5.0X 104～5.0×107Pa, more preferably 1.0X 105～1.0×107Pa. If the shear modulus G' (23) of the adhesive layer (X1) is 1.0X 104Pa or more, positional displacement of the chip can be prevented. On the other hand, if the shear modulus G' (23) of the adhesive layer (X1) is 1.0X 108Pa or less, the particles are easily bonded to each other by the expandable particles having been expandedThe surface is formed with irregularities so that the separation can be easily performed with a minute force.
When the pressure-sensitive adhesive sheet (a) is a pressure-sensitive adhesive sheet having a plurality of pressure-sensitive adhesive layers, the shear modulus G '(23) of the pressure-sensitive adhesive layer to which the chip is attached is preferably within the above range, and the shear modulus G' (23) of all the pressure-sensitive adhesive layers on the side to which the chip is attached is preferably within the above range as compared with the substrate (Y1).
In the present specification, the shear modulus G' (23) of the pressure-sensitive adhesive layer (X1) is a value measured by the method described in the examples.
The thickness of the pressure-sensitive adhesive layer (X1) is preferably 1 to 60 μm, more preferably 2 to 50 μm, even more preferably 3 to 40 μm, and even more preferably 5 to 30 μm, from the viewpoint of exhibiting excellent adhesive force and easily forming irregularities on the surface of the pressure-sensitive adhesive layer formed by expansion of the expandable particles in the expandable base material due to heat treatment.
From the viewpoint of preventing positional displacement of the chip, the ratio of the thickness of the base material (Y1) to the thickness of the adhesive layer (X1) (base material (Y1)/adhesive layer (X1)) is preferably 0.2 or more, more preferably 0.5 or more, further preferably 1.0 or more, and further preferably 5.0 or more at 23 ℃, and from the viewpoint of producing an adhesive sheet that can be easily separated with a slight force at the time of separation, it is preferably 1000 or less, more preferably 200 or less, further preferably 60 or less, and further preferably 30 or less.
The thickness of the adhesive layer (X1) is a value measured by the method described in examples.
The adhesive layer (X1) may be formed of an adhesive composition (X1) containing an adhesive resin. The components contained in the pressure-sensitive adhesive composition (x1) will be described below.
[ adhesive resin ]
The adhesive resin that is a material forming the adhesive layer (X1) is preferably a polymer having adhesive properties and a weight average molecular weight (Mw) of 1 ten thousand or more, which is a single resin. From the viewpoint of improving the adhesive force, the weight average molecular weight (Mw) of the adhesive resin is more preferably 1 to 200 ten thousand, still more preferably 2 to 150 ten thousand, and still more preferably 3 to 100 ten thousand.
Examples of the adhesive resin include: rubber-based resins such as acrylic resins, urethane-based resins and polyisobutylene-based resins, polyester-based resins, olefin-based resins, silicone-based resins, and polyvinyl ether-based resins.
These adhesive resins may be used alone, or 2 or more kinds may be used in combination.
When the adhesive resin is a copolymer having 2 or more kinds of structural units, the copolymer form is not particularly limited, and may be any of a block copolymer, a random copolymer, and a graft copolymer.
The adhesive resin may be an energy ray-curable adhesive resin having a polymerizable functional group introduced into a side chain of the adhesive resin.
Examples of the polymerizable functional group include a (meth) acryloyl group and a vinyl group.
In addition, as the energy line, there can be mentioned: ultraviolet rays, electron beams, and the like, and ultraviolet rays are preferred.
The content of the adhesive resin is preferably 30 to 99.99% by mass, more preferably 40 to 99.95% by mass, even more preferably 50 to 99.90% by mass, even more preferably 55 to 99.80% by mass, and even more preferably 60 to 99.50% by mass, based on the total amount (100% by mass) of the active ingredients in the adhesive composition (x 1).
In the following description of the present specification, the "content of each component with respect to the total amount of active ingredients of the pressure-sensitive adhesive composition" means the same as the "content of each component in the pressure-sensitive adhesive layer formed from the pressure-sensitive adhesive composition".
The pressure-sensitive adhesive resin preferably contains an acrylic resin from the viewpoint of exhibiting excellent pressure-sensitive adhesive force and easily forming irregularities due to expansion of the expandable particles on the pressure-sensitive adhesive surface during separation to produce a pressure-sensitive adhesive sheet having improved separability.
The content of the acrylic resin in the adhesive resin is preferably 30 to 100% by mass, more preferably 50 to 100% by mass, even more preferably 70 to 100% by mass, and even more preferably 85 to 100% by mass, based on the total amount (100% by mass) of the adhesive resin contained in the adhesive composition (x 1).
[ acrylic resin ]
As the acrylic resin that can be used as the adhesive resin, for example: a polymer containing a structural unit derived from an alkyl (meth) acrylate having a linear or branched alkyl group, a polymer containing a structural unit derived from a (meth) acrylate having a cyclic structure, and the like, and more preferably an acrylic copolymer (a1) having a structural unit (a1) derived from an alkyl (meth) acrylate (a1 ') (hereinafter, also referred to as "monomer (a 1')") and a structural unit (a2) derived from a functional group-containing monomer (a2 ') (hereinafter, also referred to as "monomer (a 2')").
The number of carbon atoms of the alkyl group of the monomer (a 1') is preferably 1 to 24, more preferably 1 to 12, even more preferably 2 to 10, and even more preferably 4 to 8, from the viewpoint of improving the adhesive properties.
The alkyl group of the monomer (a 1') may be a straight-chain alkyl group or a branched-chain alkyl group.
Examples of the monomer (a 1') include: methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, lauryl (meth) acrylate, tridecyl (meth) acrylate, stearyl (meth) acrylate, and the like.
These monomers (a 1') may be used alone or in combination of 2 or more.
The monomer (a 1') is preferably butyl (meth) acrylate or 2-ethylhexyl (meth) acrylate.
The content of the structural unit (a1) is preferably 50 to 99.9% by mass, more preferably 60 to 99.0% by mass, even more preferably 70 to 97.0% by mass, and even more preferably 80 to 95.0% by mass, based on the total structural units (100% by mass) of the acrylic copolymer (a 1).
Examples of the functional group of the monomer (a 2') include: hydroxyl, carboxyl, amino, epoxy, and the like.
That is, examples of the monomer (a 2') include: hydroxyl group-containing monomers, carboxyl group-containing monomers, amino group-containing monomers, epoxy group-containing monomers, and the like.
These monomers (a 2') may be used alone or in combination of 2 or more.
Among them, the monomer (a 2') is preferably a hydroxyl group-containing monomer or a carboxyl group-containing monomer.
Examples of the hydroxyl group-containing monomer include those similar to the above-mentioned hydroxyl group-containing compounds.
Examples of the carboxyl group-containing monomer include: ethylenically unsaturated monocarboxylic acids such as (meth) acrylic acid and crotonic acid; ethylenically unsaturated dicarboxylic acids such as fumaric acid, itaconic acid, maleic acid, and citraconic acid, and anhydrides thereof, 2- (acryloyloxy) ethyl succinate, and 2-carboxyethyl (meth) acrylate.
The content of the structural unit (a2) is preferably 0.1 to 40% by mass, more preferably 0.5 to 35% by mass, even more preferably 1.0 to 30% by mass, and even more preferably 3.0 to 25% by mass, based on the total structural units (100% by mass) of the acrylic copolymer (a 1).
The acrylic copolymer (a1) may further have a structural unit (a3) derived from a monomer (a3 ') other than the monomers (a1 ') and (a2 ').
In the acrylic copolymer (a1), the content of the structural units (a1) and (a2) is preferably 70 to 100% by mass, more preferably 80 to 100% by mass, even more preferably 90 to 100% by mass, and even more preferably 95 to 100% by mass, based on the total structural units (100% by mass) of the acrylic copolymer (a 1).
Examples of the monomer (a 3') include olefins such as ethylene, propylene and isobutylene, halogenated olefins such as vinyl chloride and vinylidene chloride, diene monomers such as butadiene, isoprene and chloroprene, (meth) acrylates having a cyclic structure such as cyclohexyl (meth) acrylate, benzyl (meth) acrylate, isobornyl (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentenyloxyethyl (meth) acrylate and imide (meth) acrylate, styrene, α -methylstyrene, vinyltoluene, vinyl formate, vinyl acetate, acrylonitrile, (meth) acrylamide, (meth) acrylonitrile, (meth) acryloylmorpholine and N-vinylpyrrolidone.
The acrylic copolymer (a1) may be an energy ray-curable acrylic copolymer having a polymerizable functional group introduced into a side chain thereof. The polymerizable functional group and the energy ray are as described above. The polymerizable functional group can be introduced by reacting the acrylic copolymer having the structural units (a1) and (a2) with a compound having a polymerizable functional group and a substituent capable of bonding to the functional group of the structural unit (a2) of the acrylic copolymer.
Examples of the above-mentioned compounds include: (meth) acryloyloxyethyl isocyanate, (meth) acryloyl isocyanate, (meth) glycidyl acrylate, and the like.
The weight average molecular weight (Mw) of the acrylic resin is preferably 10 to 150 ten thousand, more preferably 20 to 130 ten thousand, still more preferably 35 to 120 ten thousand, and still more preferably 50 to 110 ten thousand.
[ crosslinking agent ]
When the pressure-sensitive adhesive composition (x1) contains a pressure-sensitive adhesive resin having a functional group such as the acrylic copolymer (a1), it preferably further contains a crosslinking agent.
The crosslinking agent is a substance that reacts with the adhesive resins having a functional group and crosslinks the adhesive resins with the functional group as a crosslinking origin.
Examples of the crosslinking agent include: isocyanate crosslinking agents, epoxy crosslinking agents, aziridine crosslinking agents, metal chelate crosslinking agents, and the like.
These crosslinking agents may be used alone, or 2 or more kinds may be used in combination.
Among these crosslinking agents, isocyanate-based crosslinking agents are preferable from the viewpoint of enhancing cohesive force and enhancing adhesive force, and from the viewpoint of easy availability.
The content of the crosslinking agent can be appropriately adjusted by the number of functional groups contained in the adhesive resin, and is preferably 0.01 to 10 parts by mass, more preferably 0.03 to 7 parts by mass, and still more preferably 0.05 to 5 parts by mass, per 100 parts by mass of the adhesive resin having functional groups.
[ adhesion promoter ]
From the viewpoint of further improving the adhesive force, the adhesive composition (x1) preferably further contains a tackifier.
In the present specification, the "tackifier" is a component that assists in improving the adhesive strength of the adhesive resin, is an oligomer having a weight average molecular weight (Mw) of less than 1 ten thousand, and is different from the adhesive resin.
The tackifier has a weight average molecular weight (Mw) of preferably 400 to 10000, more preferably 500 to 8000, and further preferably 800 to 5000.
Examples of the tackifier include: rosin-based resins, terpene-based resins, styrene-based resins, C5-based petroleum resins obtained by copolymerizing C5 fractions such as pentene, isoprene, piperylene (ピペリン), and 1, 3-pentadiene produced by thermal cracking of naphtha, C9-based petroleum resins obtained by copolymerizing C9 fractions such as indene and vinyl toluene produced by thermal cracking of naphtha, hydrogenated resins obtained by hydrogenating these, and the like.
The softening point of the tackifier is preferably 60-170 ℃, more preferably 65-160 ℃, and further preferably 70-150 ℃.
In the present specification, the "softening point" of the tackifier means a value measured in accordance with JIS K2531.
The tackifier may be used alone, or 2 or more different in softening point, structure, and the like may be used in combination. In the case of using 2 or more kinds of tackifiers, the weighted average of the softening points of these plural kinds of tackifiers is preferably in the above range.
The content of the tackifier is preferably 0.01 to 65% by mass, more preferably 0.05 to 55% by mass, even more preferably 0.1 to 50% by mass, even more preferably 0.5 to 45% by mass, and even more preferably 1.0 to 40% by mass, based on the total amount (100% by mass) of the active ingredients in the adhesive composition (x 1).
[ photopolymerization initiator ]
In the present embodiment, when the pressure-sensitive adhesive composition (x1) contains an energy ray-curable pressure-sensitive adhesive resin as the pressure-sensitive adhesive resin, it is preferable that the pressure-sensitive adhesive composition further contains a photopolymerization initiator.
By preparing a pressure-sensitive adhesive composition containing an energy ray-curable pressure-sensitive adhesive resin and a photopolymerization initiator, a pressure-sensitive adhesive layer formed from the pressure-sensitive adhesive composition can sufficiently undergo a curing reaction even when irradiated with energy rays of relatively low energy, and the adhesive strength can be adjusted to a desired range.
The photopolymerization initiator may be the same as the initiator used in the solvent-free resin composition (y 1).
The content of the photopolymerization initiator is preferably 0.01 to 10 parts by mass, more preferably 0.03 to 5 parts by mass, and still more preferably 0.05 to 2 parts by mass, per 100 parts by mass of the energy ray-curable adhesive resin.
[ additive for adhesive agent ]
In the present embodiment, the pressure-sensitive adhesive composition (X1) as a material for forming the pressure-sensitive adhesive layer (X1) may contain, in addition to the above-described additives, an additive for a pressure-sensitive adhesive used in a general pressure-sensitive adhesive within a range in which the effects of the present invention are not impaired.
Examples of such additives for adhesives include: antioxidants, softeners (plasticizers), rust inhibitors, pigments, dyes, reaction inhibitors, reaction accelerators (catalysts), ultraviolet absorbers, and the like.
These additives for adhesives may be used alone, or 2 or more thereof may be used in combination.
When these additives for adhesives are contained, the content of each additive for adhesives is preferably 0.0001 to 20 parts by mass, more preferably 0.001 to 10 parts by mass, per 100 parts by mass of the adhesive resin.
The adhesive layer (X1) may contain expandable particles. The content thereof is preferably 5 parts by mass or less, more preferably 2 parts by mass or less, and most preferably no expandable particles are contained, relative to 100 parts by mass of the adhesive resin.
(Release Material)
As the release material that can be used arbitrarily, a release sheet subjected to double-sided release treatment, a release sheet subjected to single-sided release treatment, and the like can be used, and examples thereof include a release sheet in which a release agent is applied to a release material substrate.
Examples of the base material for release material include: paper such as fully-pulped paper, cellophane and kraft paper; plastic films such as polyester resin films such as polyethylene terephthalate resins, polybutylene terephthalate resins, and polyethylene naphthalate resins, and olefin resin films such as polypropylene resins and polyethylene resins; and so on.
Examples of the release agent include: rubber elastomers such as silicone resins, olefin resins, isoprene resins, and butadiene resins, long-chain alkyl resins, alkyd resins, and fluororesins.
The thickness of the release agent is not particularly limited, but is preferably 10 to 200. mu.m, more preferably 25 to 170. mu.m, and still more preferably 35 to 80 μm.
< method for producing adhesive sheet (A) >
The method for producing the pressure-sensitive adhesive sheet (a) is not particularly limited, and examples thereof include a production method (I) having the following steps (Ia) and (Ib).
Step (Ia): and a step in which a resin composition (Y1) as a material for forming the base material (Y1) is applied to the release-treated surface of the release material to form a coating film, and the coating film is dried or UV-cured to form the base material (Y1).
Step (Ib): and a step in which a pressure-sensitive adhesive composition (X1) as a material for forming the pressure-sensitive adhesive layer (X1) is applied to the surface of the formed substrate (Y1), a coating film is formed, and the coating film is dried, thereby forming the pressure-sensitive adhesive layer (X1).
Another production method of the pressure-sensitive adhesive sheet (a) includes, for example, a production method (II) having the following steps (IIa) to (IIc).
Step (IIa): and a step in which a resin composition (Y1) as a material for forming the base material (Y1) is applied to the release-treated surface of the release material to form a coating film, and the coating film is dried or UV-cured to form the base material (Y1).
Step (IIb): and a step in which a pressure-sensitive adhesive composition (X1) as a material for forming a pressure-sensitive adhesive layer (X1) is applied to the release-treated surface of the release material to form a coating film, and the coating film is dried to form the pressure-sensitive adhesive layer.
Step (IIc): and (3) bonding the surface of the substrate (Y1) formed in step (IIa) to the surface of the pressure-sensitive adhesive layer (X1) formed in step (IIb).
In the above production methods (I) and (II), the resin composition (y1) and the adhesive composition (x1) may be mixed with a diluent solvent to prepare a solution.
Examples of the coating method include: spin coating, spray coating, bar coating, blade coating, roll coating, blade coating, die coating, gravure coating, and the like.
In the production method (I) and the production method (II), the drying or UV irradiation is preferably carried out under conditions where the expandable particles do not expand by being appropriately selected. For example, when the resin composition (Y1) containing the thermally expandable particles is dried to form the base material (Y1), the drying temperature is preferably lower than the expansion initiation temperature (t) of the thermally expandable particles.
When the pressure-sensitive adhesive sheet (a) includes the substrate (Y1) and the non-expandable substrate (Y1 '), the resin composition (Y1) may be applied to the non-expandable substrate (Y1') formed in advance in the steps (Ia) and (IIa). The non-expandable substrate (Y1 ') can be formed, for example, by using a resin composition as a material for forming the non-expandable substrate (Y1') in the same manner as in the above steps (Ia) and (IIa).
[ respective manufacturing steps of the semiconductor device of the present embodiment ]
Next, each step of the method for manufacturing a semiconductor device according to the present embodiment will be described.
The method for manufacturing a semiconductor device of the present embodiment includes the following steps (1) to (3) in this order.
Step (1): and stretching the adhesive sheet (B) having the base material (Y2) and the adhesive layer (X2) to expand the distance between the plurality of chips mounted on the adhesive layer (X2) of the adhesive sheet (B).
Step (2): and a step of attaching the pressure-sensitive adhesive layer (X1) of the pressure-sensitive adhesive sheet (A) to the surface of the plurality of chips opposite to the surface in contact with the pressure-sensitive adhesive layer (X2).
Step (3): and (c) separating the plurality of chips attached to the adhesive sheet (a) from the adhesive sheet (B).
Hereinafter, an example of using a semiconductor chip as a chip will be described with reference to the drawings.
< Process (1) >
The step (1) is a step of stretching the adhesive sheet (B) having the substrate (Y2) and the adhesive layer (X2) to enlarge the intervals between the plurality of chips mounted on the adhesive layer (X2) of the adhesive sheet (B). The dicing step and the semiconductor chip reversing step described later may be performed before the step (1).
(pressure-sensitive adhesive sheet (B))
The adhesive sheet (B) is used as a stretch tape for enlarging the interval between the semiconductor chips CP.
Specifically, the adhesive sheet (B) has a base material (Y2) and an adhesive layer (X2), and is stretched to expand the plurality of semiconductor chips CP mounted on the adhesive layer (X2).
Examples of the material of the substrate (Y2) include: polyvinyl chloride resins, polyester resins (polyethylene terephthalate, etc.), acrylic resins, polycarbonate resins, polyethylene resins, polypropylene resins, acrylonitrile-butadiene-styrene resins, polyimide resins, polyurethane resins, polystyrene resins, and the like.
The substrate (Y2) preferably contains a thermoplastic elastomer, a rubber-based material, or the like, and more preferably contains a thermoplastic elastomer.
As the thermoplastic elastomer, there can be mentioned: urethane elastomers, olefin elastomers, vinyl chloride elastomers, polyester elastomers, styrene elastomers, acrylic elastomers, amide elastomers, and the like.
The substrate (Y2) may be a laminate of a plurality of films made of the above-mentioned materials, or may be a laminate of a film made of the above-mentioned material and another film.
The substrate (Y2) may contain various additives such as pigments, dyes, flame retardants, plasticizers, antistatic agents, slipping agents, and fillers in the film mainly composed of the above-mentioned resinous material.
The adhesive layer (X2) may be composed of a non-energy ray-curable adhesive or an energy ray-curable adhesive.
The non-energy ray-curable adhesive is preferably one having desired adhesive strength and removability, and examples thereof include: acrylic adhesives, rubber adhesives, silicone adhesives, urethane adhesives, polyester adhesives, polyvinyl ether adhesives, and the like. Among these, acrylic adhesives are preferred from the viewpoint of effectively suppressing the peeling of the semiconductor chip and the like when the adhesive sheet (B) is stretched.
The energy ray-curable adhesive is cured by irradiation with an energy ray, and the adhesive strength is lowered, so that the semiconductor chip and the adhesive sheet (B) can be easily separated by irradiation with an energy ray when they are separated.
Examples of the energy ray-curable adhesive constituting the adhesive layer (X2) include adhesives containing at least one selected from the group consisting of (a) polymers having energy ray-curing properties and (b) monomers and/or oligomers having at least one or more energy ray-curing groups.
The energy ray-curable polymer (a) is preferably a (meth) acrylate (co) polymer having an energy ray-curable functional group (energy ray-curable group) such as an unsaturated group introduced into a side chain thereof. Examples of the acrylate (co) polymer include: the polymer is obtained by copolymerizing an alkyl (meth) acrylate having an alkyl group with 1 to 18 carbon atoms with a monomer having a polymerizable double bond and a functional group such as a hydroxyl group, a carboxyl group, an amino group, a substituted amino group, and an epoxy group in the molecule, and then further reacting an unsaturated group-containing compound having a functional group bonded to the functional group.
Examples of the (b) monomer and/or oligomer having at least one or more energy ray-curable groups include esters of a polyol and (meth) acrylic acid, and specific examples thereof include: and polyfunctional acrylates such as cyclohexyl (meth) acrylate, monofunctional acrylates such as isobornyl (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1, 4-butanediol di (meth) acrylate, 1, 6-hexanediol di (meth) acrylate, polyethylene glycol di (meth) acrylate, and dimethylol tricyclodecane di (meth) acrylate, polyester oligomer (meth) acrylate, and urethane oligomer (meth) acrylate.
In addition to the above components, a photopolymerization initiator, a crosslinking agent, and the like may be suitably blended in the energy ray-curable adhesive.
The thickness of the base material (Y2) is not particularly limited, but is preferably 20 to 250 μm, more preferably 40 to 200 μm.
The thickness of the pressure-sensitive adhesive layer (X2) is not particularly limited, but is preferably 3 to 50 μm, more preferably 5 to 40 μm.
The adhesive sheet (B) preferably has an elongation at break at 23 ℃ of 100% or more, measured in the MD direction and the CD direction, respectively. By setting the elongation at break to the above range, a large elongation can be obtained. Therefore, the present invention can be applied to an application requiring a sufficient distance between semiconductor chips, such as manufacturing of a fan-out package.
< dicing Process, semiconductor chip inverting Process and transfer Process >
The method of placing the plurality of semiconductor chips CP on the pressure-sensitive adhesive layer (X2) of the pressure-sensitive adhesive sheet (B) is not particularly limited, and examples thereof include a method of performing the following dicing step, reversing step, and transferring step.
A cutting procedure: a step of obtaining a plurality of singulated semiconductor chips CP on the adhesive layer (X3) by bonding a semiconductor wafer W to the adhesive layer (X3) of the adhesive sheet (C) provided with the base material (Y3) and the adhesive layer (X3), and then dicing the semiconductor wafer W
Turning over the semiconductor chip: and a step of separating the plurality of semiconductor chips CP from the adhesive sheet (C) by using the adhesive sheet (D) having the base material (Y4) and the adhesive layer (X4) and attaching the adhesive layer (X4) of the adhesive sheet (D) to the surface of the plurality of semiconductor chips CP opposite to the surface contacting the adhesive layer (X3).
A transfer printing process: and a step of separating the plurality of semiconductor chips CP from the adhesive sheet (D) by using the adhesive sheet (B) having the base material (Y2) and the adhesive layer (X2), and attaching the adhesive layer (X2) of the adhesive sheet (B) to the surface of the plurality of semiconductor chips CP opposite to the surface contacting the adhesive layer (X4).
(cutting Process)
Fig. 2(a) and (b) are cross-sectional views illustrating a dicing process of obtaining a plurality of singulated semiconductor chips CP on the pressure-sensitive adhesive layer (X3) by dicing the semiconductor wafer W after the pressure-sensitive adhesive layer (X3) attached to the pressure-sensitive adhesive sheet (C).
The pressure-sensitive adhesive sheet (C) is not particularly limited as long as it can achieve the above object, but since it is required to be capable of being attached to and detached from a semiconductor chip, a pressure-sensitive adhesive sheet containing expandable particles such as the pressure-sensitive adhesive sheet (a), a pressure-sensitive adhesive sheet having a pressure-sensitive adhesive layer composed of a non-energy ray-curable pressure-sensitive adhesive and having removability, such as a stretch tape described later, or a pressure-sensitive adhesive sheet having a pressure-sensitive adhesive layer composed of an energy ray-curable pressure-sensitive adhesive is suitable.
When the adhesive sheet (a) is used as the adhesive sheet (C), the form of the adhesive sheet (a) used in the step (3) may be the same as or different from the form of the adhesive sheet (a) used in the present step.
The semiconductor wafer W may be, for example, a silicon wafer, or a compound semiconductor wafer of gallium, arsenic, or the like.
The semiconductor wafer W has a circuit W2 on a circuit surface W1. Examples of a method for forming the circuit W2 include an etching method and an inversion method. In the present specification, the surface opposite to the circuit surface W1 may be referred to as a "chip back surface".
The semiconductor wafer W is ground in advance to a predetermined thickness to expose the back surfaces of the chips, and is attached to the adhesive sheet (a). As a method of grinding the semiconductor wafer W, a known method using a grinder or the like can be mentioned.
For the purpose of holding the semiconductor wafer W, a ring frame may be attached on the adhesive sheet (C). In this case, the ring frame and the semiconductor wafer W are placed on the pressure-sensitive adhesive layer (X3) of the pressure-sensitive adhesive sheet (C), and are lightly pressed and fixed.
Next, the semiconductor wafer W held on the adhesive sheet (C) is singulated by dicing, and a plurality of semiconductor chips CP are formed. For example, dicing methods such as microtome (dicing saw), laser, plasma dicing, and stealth dicing can be used for dicing. The cutting depth at the time of dicing may be appropriately set in consideration of the thickness of the semiconductor wafer, and may be set to a depth of, for example, 2 μm or less from the upper surface of the pressure-sensitive adhesive layer (X3).
In order to distinguish this step from another cutting step described later, this step may be referred to as a "first cutting step".
In the step (1), in order to widen the interval between the obtained plurality of semiconductor chips CP, a process of stretching the adhesive sheet (C) may be included after the semiconductor wafer W is diced.
(turning procedure)
Fig. 3(a) and (b) are cross-sectional views illustrating a process of separating the plurality of semiconductor chips CP and the adhesive sheet (C) by using the adhesive sheet (D) having the base material (Y4) and the adhesive layer (X4) and attaching the adhesive layer (X4) of the adhesive sheet (D) to the surface of the plurality of semiconductor chips CP opposite to the surface contacting the adhesive layer (X3).
This step is an arbitrary step to be performed in accordance with the subsequent steps, and is performed to turn the front and back surfaces (i.e., the circuit surface W1 and the chip back surface) of the plurality of semiconductor chips CP.
The pressure-sensitive adhesive sheet (D) is not particularly limited as long as it can achieve the above object, but since it is required to be capable of being attached to and detached from a semiconductor chip, a pressure-sensitive adhesive sheet containing expandable particles such as the pressure-sensitive adhesive sheet (a), a pressure-sensitive adhesive sheet having a pressure-sensitive adhesive layer composed of a non-energy ray-curable pressure-sensitive adhesive and having removability, such as a stretch tape described later, or a pressure-sensitive adhesive sheet having a pressure-sensitive adhesive layer composed of an energy ray-curable pressure-sensitive adhesive is suitable.
The method of separating the plurality of semiconductor chips CP and the adhesive sheet (C) may be determined depending on the form of the adhesive sheet (C), and when the adhesive layer (X3) is composed of a non-energy ray-curable adhesive, the adhesive sheet (C) may be peeled off again under a predetermined condition, and when the adhesive layer (X3) is composed of an energy ray-curable adhesive, the adhesive sheet (C) may be separated after the adhesive force is reduced by curing by energy ray irradiation, or if the adhesive sheet (C) is an adhesive sheet containing expandable particles such as the adhesive sheet (a), the adhesive sheet (C) may be separated after the adhesive force is reduced by expanding the expandable particles. When the separation is performed, the types of the pressure-sensitive adhesive sheet (C) and the pressure-sensitive adhesive sheet (D) and the method of peeling are selected so that at least the pressure-sensitive adhesive layer (X4) of the pressure-sensitive adhesive sheet (D) has higher adhesiveness than the pressure-sensitive adhesive layer (X3) of the pressure-sensitive adhesive sheet (C).
(transfer printing Process)
Fig. 4(a) and (B) are cross-sectional views illustrating a transfer step of separating the plurality of semiconductor chips CP and the adhesive sheet (D) by bonding the adhesive layer (X2) of the adhesive sheet (B) to the surface of the plurality of semiconductor chips CP opposite to the surface contacting the adhesive layer (X4) using the adhesive sheet (B) having the base material (Y2) and the adhesive layer (X2).
This step is a step of transferring the plurality of semiconductor chips CP transferred onto the adhesive sheet (D) by the inverting step onto the adhesive sheet (B) which is an elastic tape. Thus, the front and back surfaces of the plurality of semiconductor chips CP are opposite to those in the dicing step.
The method of separating the plurality of semiconductor chips CP and the adhesive sheet (D) may be determined according to the form of the adhesive sheet (D) as in the case of the adhesive sheet (C).
< expansion step >
Fig. 5(a) and (B) are cross-sectional views illustrating a step (1) (expansion step) in which the adhesive sheet (B) is stretched to expand the interval between the plurality of semiconductor chips CP mounted on the adhesive layer (X2) of the adhesive sheet (B) having the base material (Y2) and the adhesive layer (X2).
After the transfer step, as shown in fig. 5 a, a plurality of semiconductor chips CP are mounted on the pressure-sensitive adhesive layer (X2) of the pressure-sensitive adhesive sheet (B).
Next, as shown in fig. 5(B), the adhesive sheet (B) is stretched to increase the distance D between the plurality of semiconductor chips CP.
Examples of the method for stretching the adhesive sheet (B) include: a method of placing a ring-shaped or circular expander to stretch the adhesive sheet (B), a method of grasping the outer periphery of the adhesive sheet (B) with a grasping member or the like to stretch the adhesive sheet (B), and the like.
The distance D between the plurality of semiconductor chips CP after expansion may be determined as appropriate depending on the form of the desired semiconductor device, but is preferably 50 to 6000 μm.
< Processes (2) and (3) >
Fig. 6(a) and (B) are sectional views illustrating a step (2) of sticking the adhesive layer (X1) of the adhesive sheet (a) to the surface of the adhesive sheet (B) as an expandable tape on the side opposite to the surface contacting the adhesive layer (X2) of the plurality of semiconductor chips CP using the adhesive sheet (a) having the base material (Y1) and the adhesive layer (X1), and a step (3) of separating the adhesive sheet (B) from the plurality of semiconductor chips CP.
In this step, the method of separating the adhesive sheet (B) from the plurality of semiconductor chips CP may be determined according to the form of the adhesive sheet (B) as in the case of the adhesive sheet (C).
Through the steps (1) to (3), as shown in fig. 7, a plurality of semiconductor chips CP having enlarged intervals therebetween are obtained on the pressure-sensitive adhesive layer (X1) of the pressure-sensitive adhesive sheet (a).
The plurality of semiconductor chips CP on the adhesive sheet (a) may be sealed with a sealing resin on the adhesive sheet (a) and then supplied to the rewiring forming step, or may be supplied to a step of separating the adhesive sheet (a) and arranging the semiconductor chips, and then supplied to the sealing step and the rewiring forming step.
In either case, the adhesive sheet (a) and the plurality of semiconductor chips CP can be separated from each other by forming irregularities on the adhesive surface (X1a) of the adhesive layer (X1) by expanding the adhesive sheet (a) and the plurality of semiconductor chips CP with heat, energy rays, or the like depending on the type of the expandable particles, thereby reducing the adhesive force between the adhesive surface (X1a) and the plurality of semiconductor chips CP.
The method of expanding the expandable particles may be appropriately selected depending on the type of the expandable particles, and when the expandable particles are thermally expandable particles, the expandable particles may be heated to a temperature equal to or higher than the expansion initiation temperature (t). Here, the "temperature equal to or higher than the expansion start temperature (t)" is preferably equal to or higher than "the expansion start temperature (t) +10 ℃ and equal to or lower than" the expansion start temperature (t) +60 ℃ ", and more preferably equal to or higher than" the expansion start temperature (t) +15 ℃ and equal to or lower than "the expansion start temperature (t) +40 ℃". Specifically, the thermally expandable particles can be expanded by heating to, for example, 120 to 250 ℃ depending on the type of the thermally expandable particles.
The swelling of the swellable particles is preferably performed in a state where the surface (Y1a) of the base material (Y1) opposite to the pressure-sensitive adhesive layer (X1) is fixed. By fixing the surface (Y1a), the occurrence of irregularities on the surface (Y1a) side can be physically suppressed, and irregularities can be effectively formed on the adhesive surface (X1a) side of the adhesive layer (X1). The fixation may be performed by any method, and examples thereof include: a method of disposing the non-expandable base material (Y1') on the surface (Y1a) side of the base material (Y1); a method of fixing the surface (Y1a) of the base material (Y1) using a suction table having a plurality of suction holes as a fixing jig; and a method of bonding a hard support to the surface (Y1a) of the base material (Y1) via an optional adhesive layer, double-sided adhesive sheet, or the like.
The suction table has a decompression mechanism such as a vacuum pump, and the object is fixed to the suction surface by sucking the object from the plurality of suction holes by the decompression mechanism.
The material of the hard support may be suitably determined in consideration of mechanical strength, heat resistance, and the like, and examples thereof include: metal materials such as SUS; non-metallic inorganic materials such as glass and silicon wafers; epoxy, ABS, acrylic, engineering plastics, super engineering plastics, polyimide, polyamide-imide and other resin materials; and composite materials such as glass epoxy resins, and among these, SUS, glass, and silicon wafers are preferable. As the engineering plastics, there may be mentioned: nylon, Polycarbonate (PC), and polyethylene terephthalate (PET). As super engineering plastics, there may be mentioned: polyphenylene Sulfide (PPS), polyether sulfone (PES), and polyether ether ketone (PEEK).
Next, a step of forming a rewiring by sealing the plurality of semiconductor chips CP on the adhesive sheet (a) with a sealing resin on the adhesive sheet (a) (hereinafter, also referred to as "step (4A)") and a step of forming a seal and rewiring by separating the plurality of semiconductor chips CP from the adhesive sheet (a) and arranging the plurality of semiconductor chips CP (hereinafter, also referred to as "step (4B)") will be described.
< Process (4A) >
The step (4A) is a step of sealing the plurality of semiconductor chips CP on the adhesive sheet (a) with a sealing resin and then forming rewiring, and preferably includes the following steps (4A-1) to (4A-3).
Step (4A-1): and a step of coating the peripheral portions of the plurality of semiconductor chips CP on the adhesive surface of the adhesive layer (X1) of the adhesive sheet (a) and the plurality of semiconductor chips CP with a sealing material, and curing the sealing material to obtain a cured sealing body in which the plurality of semiconductor chips CP are sealed with the cured sealing material.
Step (4A-2): and a step of expanding the expandable particles to separate the adhesive sheet (a) from the cured sealant.
Step (4A-3): and (c) forming a rewiring layer on the cured sealing body obtained by separating the adhesive sheet (a).
The adhesive sheet (a) is also suitable as a temporary fixing sheet for sealing a semiconductor chip as in the step (4A). In the pressure-sensitive adhesive sheet (a), since the expandable particles are contained not in the pressure-sensitive adhesive layer but in the non-pressure-sensitive adhesive resin having a high elastic modulus, the degree of freedom in design such as adjustment of the thickness of the pressure-sensitive adhesive layer (X1) on which the semiconductor chip is mounted, control of the adhesive force, elastic modulus, and the like is improved. This can suppress the occurrence of positional deviation of the semiconductor chip and the semiconductor chip from sinking into the double-sided adhesive sheet, thereby forming a rewiring layer formation surface having excellent flatness. In addition, in the case of using the adhesive sheet (a), since the semiconductor chip is placed on the adhesive surface of the adhesive layer (X1), the base material (Y1) containing the expandable particles and the rewiring layer formation surface do not come into direct contact. This can prevent the adhesion of residues from the expandable particles and a part of the pressure-sensitive adhesive layer that is significantly deformed to the surface on which the rewiring layer is formed, or the transfer of the uneven shape formed on the thermally expandable pressure-sensitive adhesive layer to the surface on which the rewiring layer is formed, which can reduce the smoothness, and can provide a surface on which the rewiring layer is formed with excellent cleanability and smoothness.
[ Process (4A-1) ]
Fig. 8(a) to (c) are cross-sectional views illustrating a step (4A-1) in which the plurality of semiconductor chips CP and the peripheral portion 45 of the plurality of semiconductor chips CP on the adhesive surface (X1a) of the pressure-sensitive adhesive layer (X1) are covered with the sealing material 40 (hereinafter, this step is also referred to as a "covering step"), and the sealing material 40 is cured (hereinafter, this step is also referred to as a "curing step"), thereby obtaining a cured sealing body 50 in which the plurality of semiconductor chips CP are sealed with the curing sealing material 41 (step (4A-1).
The sealing material 40 has a function of protecting the plurality of semiconductor chips CP and accompanying elements from the external environment. The sealing material 40 is not particularly limited, and any material can be suitably selected from materials conventionally used as a semiconductor sealing material.
The sealing material 40 is a material having curability from the viewpoint of mechanical strength, heat resistance, insulation properties, and the like, and examples thereof include: thermosetting resin compositions, energy ray-curable resin compositions, and the like.
Examples of the thermosetting resin contained in the thermosetting resin composition of the sealing material 40 include: epoxy resins, phenol resins, cyanate ester resins, and the like, and epoxy resins are preferred from the viewpoint of mechanical strength, heat resistance, insulation properties, moldability, and the like.
The thermosetting resin composition may contain, in addition to the thermosetting resin, a phenol resin-based curing agent, a curing agent such as an amine-based curing agent, a curing accelerator, an inorganic filler such as silica, and an additive such as an elastomer, as required.
The sealing material 40 may be in a solid state or a liquid state at room temperature. The form of the sealing material 40 which is solid at room temperature is not particularly limited, and may be, for example, a pellet form, a sheet form, or the like.
In the present embodiment, the coating step and the curing step are preferably performed using a sheet-shaped sealing material (hereinafter, also referred to as a "sheet-shaped sealing material"). In the method using the sheet-like sealing material, the sheet-like sealing material is placed so as to cover the plurality of semiconductor chips CP and the peripheral portions 45 thereof, and the plurality of semiconductor chips CP and the peripheral portions 45 thereof are covered with the sealing material 40. In this case, it is preferable to heat and press the semiconductor chips CP by vacuum lamination or the like while appropriately reducing the pressure so as not to generate a portion not filled with the sealing material 40 in the gap between the semiconductor chips CP.
As the method of coating the plurality of semiconductor chips CP and the peripheral portion 45 thereof with the sealing material 40, any method can be appropriately selected from the methods conventionally used in the semiconductor sealing process, and for example, a roll lamination method, a vacuum pressing method, a vacuum lamination method, a spin coating method, a die coating method, a transfer molding method, a compression molding method, or the like can be applied.
In these methods, the sealant 40 is generally heated to impart fluidity during coating in order to improve the filling property of the sealant 40.
The temperature at which the thermosetting resin composition is heated in the coating step varies depending on the type of the sealing material 40, the type of the adhesive sheet (a), and the like, and is, for example, 30 to 180 ℃, preferably 50 to 170 ℃, and more preferably 70 to 150 ℃. The heating time is, for example, 5 seconds to 60 minutes, preferably 10 seconds to 45 minutes, and more preferably 15 seconds to 30 minutes.
As shown in fig. 8(b), the sealing material 40 covers the entire exposed surfaces of the plurality of semiconductor chips CP and fills gaps between the plurality of semiconductor chips CP.
Next, as shown in fig. 8(c), after the coating step, the sealing material 40 is cured to obtain a cured sealing body 50 in which the plurality of semiconductor chips CP are sealed with the cured sealing material 41.
In the curing step, the temperature for curing the sealing material 40 varies depending on the type of the sealing material 40, the type of the adhesive sheet (a), and the like, and is, for example, 80 to 240 ℃, preferably 90 to 200 ℃, and more preferably 100 to 170 ℃. The heating time is, for example, 10 to 180 minutes, preferably 20 to 150 minutes, and more preferably 30 to 120 minutes.
Through the step (4A-1), the cured sealing body 50 in which the plurality of semiconductor chips CP spaced apart by the predetermined distance are embedded in the cured sealing material 41 is obtained.
[ Process (4A-2) ]
Next, as shown in fig. 8(d), the adhesive sheet (a) is separated from the cured sealant 50.
The method for separating the adhesive sheet (a) is as described above.
In the present embodiment, the description has been given of an example in which the sealing step is performed in a state in which the circuit surface W1 of the plurality of semiconductor chips CP is in contact with the adhesive layer (X1) of the adhesive sheet (a), but the sealing step may be performed in a state in which the circuit surface W1 is exposed (that is, in a state in which the back surface of the chip is in contact with the adhesive layer (X1)). In this case, the circuit surface W1 of the plurality of semiconductor chips CP is covered with the sealing resin, but after the sealing resin is cured, the cured sealing material may be ground using a grinder or the like as appropriate to expose the circuit surface W1 again.
[ step (4A-3): rewiring layer formation Process
Fig. 9(a) to (c) are cross-sectional views illustrating a step (4A-3) of forming a rewiring layer on the cured sealing body 50 after the adhesive sheet (a) is separated.
Fig. 9(b) is a cross-sectional view illustrating a step of forming the 1 st insulating layer 61 on the circuit surface W1 of the semiconductor chip CP and the surface 50a of the cured sealing body 50.
The 1 st insulating layer 61 made of an insulating resin is formed on the circuit surface W1 and the surface 50a, and the internal terminal electrode W3 of the circuit W2 or the circuit W2 of the semiconductor chip CP is exposed. Examples of the insulating resin include: polyimide resin and polybenzene
Figure BDA0002473141480000361
Azole resins, silicone resins, and the like. The material of the internal terminal electrode W3 is not limited as long as it is a conductive material, and examples thereof include: metals such as gold, silver, copper, and aluminum, and alloys containing these metals.
Fig. 9(c) is a cross-sectional view illustrating a step of forming the rewiring 70 electrically connected to the semiconductor chip CP sealed in the cured sealing body 50.
In this embodiment mode, after the 1 st insulating layer 61 is formed, the rewiring 70 is formed. The material of the rewiring 70 is not limited as long as it is a conductive material, and examples thereof include: metals such as gold, silver, copper, and aluminum, and alloys containing these metals. The rewiring 70 can be formed by a known method such as a metal surface etching method or a semi-additive method.
Fig. 10(a) is a cross-sectional view illustrating a step of forming the 2 nd insulating layer 62 covering the rewiring 70.
The rewiring 70 has an external electrode pad 70A for an external terminal electrode. The insulating layer 2 is provided with an opening or the like to expose the external electrode pad 70A for the external terminal electrode. In the present embodiment, the external electrode pad 70A is exposed to the inside and outside of the region (region corresponding to the surface 50A on the cured sealing body 50) of the semiconductor chip CP of the cured sealing body 50 (region corresponding to the circuit surface W1). The rewiring 70 is formed on the surface 50A of the cured sealing body 50 so that the external electrode pads 70A are arranged in an array. In the present embodiment, since the external electrode pad 70A is exposed to the outside of the region of the cured sealing body 50 outside the semiconductor chip CP, FOWLP or FOPLP can be obtained.
(Process for connecting to external terminal electrode)
Next, the external terminal electrode 80 may be connected to the external electrode pad 70 as necessary.
Fig. 10(b) is a cross-sectional view illustrating a process of connecting the external terminal electrode 80 to the external electrode pad 70A.
External terminal electrodes 80 such as solder balls are placed on the external electrode pads 70A exposed from the 2 nd insulating layer 62, and the external terminal electrodes 80 and the external electrode pads 70A are electrically connected by soldering or the like. The material of the solder ball is not particularly limited, and lead-containing solder, lead-free solder, and the like can be given.
(second cutting step)
Fig. 10(c) is a cross-sectional view illustrating a second dicing step for singulating the cured sealing body 50 connected to the external terminal electrode 80.
In this step, the cured sealing body 50 is singulated into individual pieces by the semiconductor chip CP unit. The method for singulating the cured sealing body 50 is not particularly limited, and may be performed by a cutting device such as a dicing saw (dicing saw).
By singulating the cured sealing body 50, the semiconductor device 100 of the semiconductor chip CP unit can be manufactured. As described above, the semiconductor device 100 in which the external terminal electrode 80 and the external electrode pad 70A outside the region fanned out to the semiconductor chip CP are connected may be manufactured as FOWLP, FOPLP, or the like.
(installation procedure)
In this embodiment, it is preferable to further include a step of mounting the singulated semiconductor device 100 on a printed wiring board or the like.
< Process (4B) >
Next, the step (4B) of separating the plurality of semiconductor chips CP from the adhesive sheet (a) after the step (3), performing rearrangement for arranging the semiconductor chips, and then forming sealing and rewiring will be described. The step (4B) preferably includes the following steps (4B-1) and (4B-2).
Step (4B-1): and a step of expanding the expandable particles to separate the adhesive sheet (a) from the plurality of semiconductor chips CP.
Step (4B-2): and aligning the plurality of semiconductor chips CP separated from the adhesive sheet (a).
The step (4B-2) is preferably a step of aligning the plurality of semiconductor chips CP separated from the adhesive sheet (a) using an aligning jig having a plurality of accommodating portions capable of accommodating the plurality of semiconductor chips CP.
[ Process (4B-1) ]
Fig. 11(a) and (B) are sectional views illustrating a step (4B-1) in which the adhesive sheet (a) is separated from the plurality of semiconductor chips CP by swelling the expandable particles in the adhesive sheet (a) and the plurality of separated semiconductor chips CP are moved to the alignment jig 10 placed on the holding member 20 in the step (4B-1). The aligning jig 10 includes a plurality of accommodating portions 11 capable of accommodating the semiconductor chips CP.
The conditions for separating the adhesive sheet (a) from the plurality of semiconductor chips CP are as described above.
As shown in fig. 11(b), the holding member 20 has the aligning jig 10 placed on the holding surface 21 thereof, and the semiconductor chip CP is accommodated in the accommodating portion 11 which is an opening portion of the aligning jig 10.
The holding member 20 can suck and hold the semiconductor chip CP by a decompression mechanism not shown.
Fig. 12 shows a plan view of the alignment jig 10, and the alignment jig 10 has a frame-shaped body portion 12 and an accommodating portion 11 capable of accommodating the semiconductor chip CP. The housing parts 11 of the aligning jig 10 having a substantially square opening in a plan view are arranged in a square lattice shape.
[ Process (4B-2) ]
Fig. 13(a) and (B) are cross-sectional views illustrating a step (4B-2) of arranging a plurality of semiconductor chips CP separated from the adhesive sheet (a).
As shown in fig. 13(a), a plurality of semiconductor chips CP separated from the adhesive sheet (a) are placed in the accommodating portion 11 of the aligning jig 10 having a plurality of accommodating portions 11 capable of accommodating the plurality of semiconductor chips CP.
Next, as shown in fig. 13(b), the aligning jig 10 on the holding member 20 is moved in the X direction and the Y direction, and the wall portion 11a of the aligning jig 10 is brought into contact with the side surface CPa of the semiconductor chip CP. At this time, the holding member 20 itself or both the holding member 20 and the aligning jig 10 may be moved so that the wall portion 11a of the aligning jig 10 is brought into contact with the side surface CPa of the semiconductor chip CP.
As a result, as shown in fig. 13(b), a plurality of aligned semiconductor chips CP are obtained.
The plurality of semiconductor chips CP aligned in the step (4B) are then transferred again to a temporary fixing sheet such as an adhesive sheet (a) after the above-described reversing step, transfer step, and the like are performed as necessary, and subjected to the same sealing step and rewiring forming step as in the step (4A), whereby FOWLP and FOPLP can be manufactured.
Examples
The present invention will be specifically described with reference to the following examples, but the present invention is not limited to the following examples. The physical property values in the following production examples and examples are values measured by the following methods.
< weight average molecular weight (Mw) >)
The measurement was performed under the following conditions using a gel permeation chromatography apparatus (manufactured by Tosoh corporation, product name "HLC-8020"), and the measurement value was calculated as standard polystyrene.
(measurement conditions)
Column chromatography: a column comprising TSK guard column HXL-L, TSK gel G2500HXL, TSK gel G2000HXL and TSK gel G1000HXL (all manufactured by Tosoh Corp.) connected in this order
Column temperature: 40 deg.C
Elution solvent: tetrahydrofuran (THF)
Flow rate: 1.0 mL/min
< measurement of thickness of each layer >
The measurement was carried out using a constant-pressure thickness gauge (model: "PG-02J", according to JIS K6783, Z1702, Z1709) manufactured by Telock.
< average particle diameter (D) of thermally expandable particles50) 90% particle diameter (D)90)＞
The particle distribution of the thermally expandable particles before expansion at 23 ℃ was measured using a laser diffraction particle size distribution measuring apparatus (for example, manufactured by Malvern under the product name "Mastersizer 3000").
Then, the particle diameters corresponding to cumulative volume frequencies of 50% and 90% calculated from the smaller particle diameter in the particle distribution were defined as "average particle diameter of thermally expandable particles (D)50) And 90% particle diameter (D) of the thermally expandable particles90)”。
< storage modulus of Expandable substrate E' >
When the measurement object was a non-adhesive expandable substrate, the expandable substrate was set to a size of 5mm in the longitudinal direction, 30mm in the transverse direction, and 200 μm in the thickness, and the substrate from which the release material was removed was used as a test sample.
The storage modulus E' of the test sample at a given temperature was measured using a dynamic viscoelasticity measuring apparatus (product name "DMAQ 800" manufactured by TA Instruments) under conditions of a test initiation temperature of 0 ℃, a test completion temperature of 300 ℃, a temperature rise rate of 3 ℃/min, a vibration frequency of 1Hz, and an amplitude of 20 μm.
< shear modulus G' of adhesive layer >
In the case where the object to be measured is an adhesive layer having adhesiveness, the adhesive layer is formed to have a diameter of 8mm × a thickness of 3mm, and the adhesive layer from which the release agent is removed is used as a test sample.
The shear modulus G' of the test sample at a given temperature was measured by the torsional shear method using a viscoelasticity measuring apparatus (manufactured by Anton Paar, Inc., under the apparatus name "MCR 300") under the conditions of a test initiation temperature of 0 ℃, a test termination temperature of 300 ℃, a temperature rise rate of 3 ℃/min, and a vibration frequency of 1 Hz. Then, based on the measured value of the shear modulus G ', the value of the storage modulus E' is calculated according to the approximate expression "E '═ 3G'".
< Probe viscosity number >
The expandable substrate or the adhesive layer to be measured was cut into a square having a side length of 10mm, and then left to stand at 23 ℃ for 24 hours in an atmosphere of 50% RH (relative humidity), and the light release film was removed to obtain a test sample.
The probe tack value of the surface of the test sample exposed by removing the light release film was measured in accordance with JIS Z0237:1991 using a tack tester (product name "NTS-4800" manufactured by Nippon Special instruments Co., Ltd.) under an environment of 23 ℃ and 50% RH (relative humidity).
Specifically, the contact load was 0.98N/cm at 1 second2After a stainless steel probe having a diameter of 5mm was brought into contact with the surface of the test sample under the conditions of (1), the force required to separate the probe from the surface of the test sample at a speed of 10 mm/sec was measured. Then, the measured value was taken as the probe tack value of the test sample.
The adhesive resin, additive, thermally expandable particles, and release agent used for forming each layer in the following production examples are described in detail below.
< adhesive resin >
Acrylic copolymer (i): a solution containing an acrylic copolymer having an Mw of 60 ten thousand, the acrylic copolymer having a structural unit derived from a raw material monomer composed of 2-ethylhexyl acrylate (2 EHA)/2-hydroxyethyl acrylate (HEA) at a mass ratio of 80.0/20.0. Diluting the solvent: ethyl acetate, solid content concentration: 40% by mass.
Acrylic copolymer (ii): a solution containing an acrylic copolymer having an Mw of 60 ten thousand having a structural unit derived from a raw material monomer composed of n-Butyl Acrylate (BA)/Methyl Methacrylate (MMA)/2-hydroxyethyl acrylate (HEA)/acrylic acid (mass ratio) of 86.0/8.0/5.0/1.0. Diluting the solvent: ethyl acetate, solid content concentration: 40% by mass.
< additive >
Isocyanate crosslinking agent (i): manufactured by Tosoh corporation, product name "Coronate L", solid content concentration: 75% by mass.
Photopolymerization initiator (i): the product name "Irgacure 184", manufactured by BASF corporation, 1-hydroxycyclohexyl phenyl ketone.
< thermally expandable particles >
Thermally expandable particles (i): manufactured by Kureha under the name "S2640", having an expansion initiation temperature (t) of 208 ℃ and an average particle diameter (D)50) 24 μm, 90% particle size (D)90)＝49μm。
< stripping Material >
Heavy release film: a product name "SP-PET 382150" manufactured by lindecco corporation, in which a release agent layer formed of a silicone release agent was provided on one surface of a polyethylene terephthalate (PET) film, and the thickness: 38 μm.
Light release film: a product name "SP-PET 381031" manufactured by linderaceae corporation, in which a release agent layer formed of a silicone release agent is provided on one surface of a PET film, and the thickness: 38 μm.
Production example 1
(formation of adhesive layer (X1))
An adhesive composition (x1) having a solid content (effective component concentration) of 25 mass% was prepared by adding 5.0 parts by mass (solid content ratio) of the isocyanate-based crosslinking agent (i) to 100 parts by mass of the solid content of the solution of the acrylic copolymer (i) as the adhesive resin, diluting with toluene, and stirring the mixture uniformly.
Then, the prepared pressure-sensitive adhesive composition (X1) was applied to the surface of the release agent layer of the heavy release film to form a coating film, and the coating film was dried at 100 ℃ for 60 seconds to form a pressure-sensitive adhesive layer (X-1) having a thickness of 10 μm. The adhesive layer (X-1) had a shear modulus G' (23) of 2.5X 10 at 23 ℃5Pa。
Production example 2
(formation of adhesive layer (X1'))
The isocyanate-based crosslinking agent (i) was added in an amount of 5.0 parts by mass (solid content ratio) to 100 parts by mass of the solid content of the solution of the acrylic copolymer (i) as an adhesive resin, diluted with toluene, and stirred to be uniform, thereby preparing a solid content concentration(effective component concentration) 25 mass% of the binder composition (x 1'). Then, the prepared adhesive composition (X1 ') was applied on the surface of the release agent layer of the heavy release film to form a coating film, and the coating film was dried at 100 ℃ for 60 seconds to form an adhesive layer (X1') having a thickness of 10 μm. The shear modulus G '(23) of the pressure-sensitive adhesive layer (X1') at 23 ℃ was 2.5X 105Pa。
Production example 3
(formation of swellable substrate (Y1-1))
The terminal isocyanate urethane prepolymer obtained by reacting an ester diol with isophorone diisocyanate (IPDI) was reacted with 2-hydroxyethyl acrylate to obtain a 2-functional acrylate urethane oligomer having a weight average molecular weight (Mw) of 5000.
Then, to 40 mass% (solid content ratio) of the synthesized acrylic urethane oligomer, 40 mass% (solid content ratio) of isobornyl acrylate (IBXA) and 20 mass% (solid content ratio) of phenylhydroxypropyl acrylate (HPPA) were added as energy line polymerizable monomers, and 2.0 parts by mass (solid content ratio) of a photopolymerization initiator (i) and 0.2 parts by mass (solid content ratio) of a phthalocyanine pigment as an additive were further added to 100 parts by mass of the total amount of the acrylic urethane oligomer and the energy line polymerizable monomer to prepare an energy line curable composition. The heat-expandable particles (i) are blended with the energy ray-curable composition to prepare a solvent-free resin composition (y1) containing no solvent. The content of the thermally expandable particles (i) was 20% by mass based on the total amount (100% by mass) of the composition (y 1).
Next, the prepared resin composition (y1) was applied on the surface of the release agent layer of the light release film, and a coating film was formed. Then, an ultraviolet irradiation apparatus (product name "ECS-401 GX" manufactured by Eye Graphics) and a high-pressure mercury lamp (product name "H04-L41" manufactured by Eye Graphics) were used to irradiate light at an illuminance of 160mW/cm2Light quantity 500mJ/cm2The coating film was cured by irradiation with ultraviolet rays under the conditions of (1) to form an expandable substrate (Y1-1) having a thickness of 50 μm. In addition, purpleThe illuminance and the light amount at the time of the external light irradiation are values measured by using an illuminance/light meter (product name "UV PowerPuck II" manufactured by EIT corporation).
The expandable substrate (Y1-1) obtained above had a storage modulus E' of 5.0X 10 at 23 ℃8Pa, storage modulus E' at 100 ℃ of 4.0X 106Pa, storage modulus E' at 208 ℃ of 4.0X 106Pa. The swelling substrate (Y1-1) had a probe tack value of 2mN/5mm φ.
Production example 4
(preparation of adhesive sheet (A))
The pressure-sensitive adhesive layer (X1) formed in production example 1 and the surface of the expandable base material (Y1-1) formed in production example 3 were bonded to each other, the light release film on the expandable base material (Y1-1) side was removed, and the pressure-sensitive adhesive layer (X1') formed in production example 2 was bonded to the exposed surface of the expandable base material (Y1-1). Thus, a pressure-sensitive adhesive sheet (a) was produced in which a light release film/a pressure-sensitive adhesive layer (X1')/an expandable substrate (Y1-1)/a pressure-sensitive adhesive layer (X1)/a heavy release film were laminated in this order.
Production example 5
(preparation of adhesive sheet (B) (stretch adhesive tape))
An energy ray-curable polymer was obtained by reacting an acrylic copolymer obtained by reacting butyl acrylate/2-hydroxyethyl acrylate (mass ratio) of 85/15 (mol%) with methacryloyloxyethyl isocyanate (MOI) in an amount of 80 mol% relative to the 2-hydroxyethyl acrylate. The energy ray-curable polymer had a weight average molecular weight (Mw) of 60 ten thousand. An adhesive composition was obtained by mixing 100 parts by mass of the obtained energy ray-curable polymer, 3 parts by mass of 1-hydroxycyclohexyl phenyl ketone (product name "Irgacure 184" from BASF) as a photopolymerization initiator, and 0.45 parts by mass of a toluene diisocyanate-based crosslinking agent (product name "Coronate L" from tokyo co., ltd.) as a crosslinking agent in a solvent.
Next, the pressure-sensitive adhesive composition was applied to the surface of the release agent layer of a release film (product name "SP-PET 3811", manufactured by linkeko corporation) in which a silicone-based release agent layer was formed on one surface of a polyethylene terephthalate (PET) film, and dried by heating, thereby forming a pressure-sensitive adhesive layer (X2) having a thickness of 10 μm on the release film. Then, one surface of a polyester urethane elastomer sheet (product name "high DUS 202" manufactured by Sheedom corporation, thickness 50 μm) as a substrate (Y2) was bonded to the exposed surface of the pressure-sensitive adhesive layer, and a pressure-sensitive adhesive sheet (B) (stretch tape) was obtained in a state in which a release film was attached to the pressure-sensitive adhesive layer.
[ production of semiconductor device ]
Example 1
Using the adhesive sheet (a) and the adhesive sheet (B) obtained above, a semiconductor device was produced by the following method.
< Process (1) >
The pressure-sensitive adhesive sheet (B) obtained in production example 5 was cut into a size of 210mm × 210 mm. At this time, the cut sheet was cut so that each side was parallel to or perpendicular to the MD direction of the base material (Y2) of the adhesive sheet (B). Then, the release sheet was peeled off from the adhesive sheet (B), the semiconductor wafer (diameter: 150mm, thickness: 350 μm) was diced to obtain a plurality of semiconductor chips (1800 chips), and the obtained plurality of semiconductor chips were attached to the adhesive layer (X2) of the adhesive sheet (B) so that the circuit-formation-face W1 and the adhesive layer (X2) were on the opposite side. At this time, the transfer is performed such that the pair of semiconductor chips is positioned at the center portion of the adhesive sheet (B). The dicing lines at the time of dicing the semiconductor wafer were transferred so as to be parallel or perpendicular to the sides of the adhesive sheet (B).
Next, the adhesive sheet (B) to which the plurality of semiconductor chips are attached is set in a stretching device capable of biaxial stretching. As shown in fig. 14, the stent has an X-axis direction (positive direction is set as + X-axis direction, negative direction is set as-X-axis direction) and a Y-axis direction (positive direction is set as + Y-axis direction, negative direction is set as-Y-axis direction) orthogonal to each other, and has a holding mechanism for stretching in each direction (i.e., the + X-axis direction, the-X-axis direction, the + Y-axis direction, and the-Y-axis direction). The adhesive sheet (B) is set in an expanding device so that the MD direction of the adhesive sheet (B) is aligned with the X-axis or Y-axis direction, and each side of the adhesive sheet (B) is gripped by the holding mechanism, and the adhesive sheet (B) is stretched under the following conditions, thereby expanding the interval between the plurality of semiconductor chips attached to the adhesive layer (X2) of the adhesive sheet (B).
Number of holding mechanisms: each side has 5
Stretching speed: 5 mm/sec
Stretching distance: each side was stretched 60 mm.
< Process (2) >
Next, the pressure-sensitive adhesive sheet (a) obtained in production example 4 was cut into a size of 230mm × 230 mm.
The heavy release film and the light release film were peeled from the cut adhesive sheet (A), the exposed adhesive layer (X1) was adhered to the surface of the plurality of semiconductor chips opposite to the surface thereof in contact with the adhesive layer (X2), and a support (SUS plate, thickness 1mm, size: 200 mm. phi.) was adhered to the surface of the exposed adhesive layer (X1').
< Process (3) >
Next, from one side of the adhesive sheet (B) on the substrate side, the illuminance was 230mW/cm2Light quantity 190mJ/cm2The adhesive layer is cured by irradiation with ultraviolet rays, and the plurality of semiconductor chips attached to the adhesive sheet (a) and the adhesive sheet (B) are separated from each other.
Thus, a plurality of semiconductor chips mounted on the pressure-sensitive adhesive layer (X1) of the pressure-sensitive adhesive sheet (a) with a predetermined interval therebetween were obtained.
< Process (4A-1) >
Next, a sealing resin film (sealing material) was laminated on the adhesive surface (X1) and the plurality of semiconductor chips, and the adhesive surface of the adhesive layer (X1) and the semiconductor chips were covered with the sealing material using a vacuum heat and pressure laminator ("7024 HP 5" manufactured by ROHM and HAAS corporation) and the sealing material was cured to produce a cured sealing body. The sealing conditions were as follows.
Preheating temperature: the working table and the diaphragm are both 100 DEG C
Vacuum suction: 60 seconds
Dynamic hold mode: 30 seconds
Static hold mode: 10 seconds
Sealing temperature: 180 deg.C (lower than 208 deg.C of the expansion starting temperature of the thermally expandable particles)
Sealing time: 60 minutes
< Process (4A-2) >
After sealing, the pressure-sensitive adhesive sheet (a) is heated at 240 ℃ or higher, which is the expansion starting temperature of the heat-expandable particles (208 ℃), for 3 minutes, and the cured seal is separated from the pressure-sensitive adhesive sheet (a). When the pressure-sensitive adhesive sheet (a) is separated, the pressure-sensitive adhesive sheet (a) can be separated at a time while being kept flat without being bent.
As is apparent from the above results, according to the manufacturing method of the present embodiment, the chips whose intervals are widened in the expanding step can be easily separated from the stretchable tape at a time while maintaining the intervals, and the separated chips can be easily supplied to the next step (sealing step). In addition, since the adhesive sheet (a) can significantly reduce the adhesive force by swelling the swellable particles, the adhesive sheet (a) can be easily separated after the sealing step.
Next, the separability of the pressure-sensitive adhesive sheet (a) used in the present embodiment was evaluated by the following tests.
[ measurement of adhesive force of adhesive sheet ]
(measurement of adhesive force before and after heating of adhesive sheet (A))
The light release film of the pressure-sensitive adhesive sheet (A) thus produced was removed, and a polyethylene terephthalate (PET) film (product name "Cosmo ShineA 4100" from Toyo Co., Ltd.) having a thickness of 50 μm was laminated on the pressure-sensitive adhesive surface of the exposed pressure-sensitive adhesive layer (X1') to prepare a pressure-sensitive adhesive sheet with a substrate. Then, the heavy release film of the pressure-sensitive adhesive sheet (a) was also removed, and the exposed pressure-sensitive adhesive surface of the pressure-sensitive adhesive layer (X1) was attached to a stainless steel plate (SUS 304360) as an adherend, and allowed to stand for 24 hours in an environment of 23 ℃ and 50% RH (relative humidity), to obtain a test sample.
Using the above test samples, the adhesive force at 23 ℃ was measured by a 180 ℃ peeling method based on JIS Z0237:2000 at a tensile rate of 300 mm/min under an environment of 23 ℃ and 50% RH (relative humidity).
The test sample was heated on a hot plate at 240 ℃ or higher, which is the expansion start temperature (208 ℃) of the thermally expandable particles, for 3 minutes, left standing in a standard environment (23 ℃, 50% RH (relative humidity)) for 60 minutes, and then the adhesive force after heating at the expansion start temperature or higher was also measured under the same conditions as described above.
(measurement of adhesive force before and after UV irradiation of pressure-sensitive adhesive sheet for comparison)
The pressure-sensitive adhesive sheet for comparison (manufactured by Lindceko corporation, trade name "D-820") was attached to a stainless steel plate (SUS 304360) as an adherend, and left to stand in an environment of 23 ℃ and 50% RH (relative humidity) for 24 hours, and the adhesive strength at 23 ℃ before the irradiation of ultraviolet rays was measured under the same conditions as the pressure-sensitive adhesive sheet (A) as a test sample.
Next, the substrate side of the comparative adhesive sheet was irradiated with light at an illuminance of 230mW/cm2Light quantity 190mJ/cm2After irradiation with ultraviolet rays, the adhesive force at 23 ℃ after irradiation with ultraviolet rays was measured under the same conditions as described above.
[ Table 1]
Resin sheet (A) Adhesive sheet for comparison
Adhesion before swelling or before ultraviolet irradiation (N/25mm) 0.7 4.3
After swelling or after UV irradiationAdhesion (N/25mm) Not measured (.) 0.8
(*): since the test specimen could not be stuck to the adherend (SUS plate), the adhesive force could not be measured
As is clear from table 1, the pressure-sensitive adhesive sheet (a) used in the present embodiment has a smaller adhesive force and an excellent separability after swelling of the swellable particles than the comparative pressure-sensitive adhesive sheet after ultraviolet irradiation. Therefore, according to the manufacturing method of the present embodiment, even when the rearrangement step is performed as a subsequent step, the semiconductor chips can be easily separated compared to the conventional ultraviolet irradiation type adhesive sheet, and can be supplied to the rearrangement step.

Claims (10)

1. A method for manufacturing a semiconductor device, which comprises using an expandable adhesive sheet (A) having a base material (Y1) containing expandable particles and an adhesive layer (X1),
the method comprises the following steps (1) to (3) in this order, and after the step (3), the expandable particles of the adhesive sheet (A) are expanded to separate the adhesive sheet (A) from the adherend,
step (1): stretching the adhesive sheet (B) having the base material (Y2) and the adhesive layer (X2) to expand the distance between the plurality of chips mounted on the adhesive layer (X2) of the adhesive sheet (B);
step (2): a step of attaching the pressure-sensitive adhesive layer (X1) of the pressure-sensitive adhesive sheet (A) to the surface of the plurality of chips opposite to the surface in contact with the pressure-sensitive adhesive layer (X2);
step (3): and (c) separating the plurality of chips attached to the adhesive sheet (a) from the adhesive sheet (B).
2. The method for manufacturing a semiconductor device according to claim 1, wherein the expandable particles are thermally expandable particles having an expansion initiation temperature (t) of 60 to 270 ℃, and the adhesive sheet (A) is separated from the adherend by heating the adhesive sheet (A) after the step (3) to expand the thermally expandable particles.
3. The method for manufacturing a semiconductor device according to claim 1 or 2, wherein the adhesive force of the adhesive layer (X1) of the adhesive sheet (A) before the swelling particles are swelled is 0.1-10.0N/25 mm.
4. The method for manufacturing a semiconductor device according to any one of claims 1 to 3, wherein the adhesive sheet (A) has a probe tack value of less than 50mN/5mm φ on the surface of the base material (Y1).
5. The method for manufacturing a semiconductor device according to any one of claims 1 to 4, wherein the chip is a semiconductor chip.
6. The method for manufacturing a semiconductor device according to claim 5, further comprising the steps (4A-1) to (4A-3),
step (4A-1): a step of coating the peripheral portions of the plurality of semiconductor chips on the bonding surfaces of the plurality of semiconductor chips and the pressure-sensitive adhesive layer (X1) with a sealing material, and curing the sealing material to obtain a cured sealing body in which the plurality of semiconductor chips are sealed with the cured sealing material;
step (4A-2): a step of expanding the expandable particles to separate the adhesive sheet (a) from the cured sealing body;
step (4A-3): and (c) forming a rewiring layer on the cured sealing body obtained by separating the adhesive sheet (a).
7. The method for manufacturing a semiconductor device according to claim 5, further comprising the following steps (4B-1) and (4B-2),
step (4B-1): a step of expanding the expandable particles to separate the adhesive sheet (a) from the plurality of semiconductor chips;
step (4B-2): and (c) aligning the plurality of semiconductor chips separated from the adhesive sheet (a).
8. The method for manufacturing a semiconductor device according to claim 7, wherein the step (4B-2) is a step of arranging the plurality of semiconductor chips separated from the adhesive sheet (A) using an arrangement jig having a plurality of housing portions capable of housing the plurality of semiconductor chips.
9. The method for manufacturing a semiconductor device according to any one of claims 1 to 8, wherein the adhesive sheet (B) has an elongation at break of 100% or more as measured in the MD direction and the CD direction at 23 ℃.
10. The method for manufacturing a semiconductor device according to any one of claims 1 to 9, which is a method for manufacturing a fan-out semiconductor device.
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