CN111293585B - Vertical cavity surface emitting laser, array and manufacturing method - Google Patents
Vertical cavity surface emitting laser, array and manufacturing method Download PDFInfo
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- CN111293585B CN111293585B CN202010112798.4A CN202010112798A CN111293585B CN 111293585 B CN111293585 B CN 111293585B CN 202010112798 A CN202010112798 A CN 202010112798A CN 111293585 B CN111293585 B CN 111293585B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
- H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
- H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
- H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P
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Abstract
The invention discloses a vertical cavity surface emitting laser, an array and a manufacturing method thereof, and a manufacturing method of the vertical cavity surface emitting laser. Inserting a pumping light source into a transmitting light source resonant cavity, and realizing pumping light emission of short wave 800nm to 1100nm by using a GaAs material, wherein the pumping light horizontally oscillates; the vertical coupler structure has the functions of coupling pump light to a vertical surface for output and releasing lattice mismatch stress of an InP buffer layer in the process of hetero-epitaxy on GaAs, so that the problems of small refractive index difference, high thermal resistance, lack of an effective photoelectric limit structure, high resistance of a P-type InP layer, serious heating and the like of a DBR reflector faced by the traditional InP-based long-wavelength vertical cavity surface emitting laser are structurally completely avoided, and the performance and reliability of the device are improved.
Description
Technical Field
The invention relates to the field of semiconductor lasers, in particular to a vertical cavity surface emitting laser, an array and a manufacturing method.
Background
The long wavelength vertical cavity surface emitting laser is a semiconductor laser capable of emitting long wavelength band laser (1.3-1.8um) from the surface, and has the advantages of low threshold, low power consumption, easy integration, etc. The long-wavelength vertical cavity surface emitting laser can be applied to the fields of long-distance (>80km) high-speed optical communication, optical interconnection, gas detection, laser radar and the like, and has great application prospect in the future along with the continuous development of informatization, intellectualization and greening society.
The traditional long-wavelength Vertical Cavity Surface Emitting Laser (VCSEL) preparation technology is based on an indium phosphide (InP) material system, and compared with a mature gallium arsenide (GaAs) based vertical cavity surface emitting laser, the InP based long-wavelength VCSEL is small in refractive index difference of a DBR reflector, large in thermal resistance, short of an effective photoelectric limiting structure, large in resistance of a P-type InP layer, serious in heating and the like, and severely limits the output performance of the long-wavelength VCSEL device. In the prior art, the Buried Tunnel Junction (BTJ) structure is mostly fabricated in the VCSEL to form the photoelectric limit, and the secondary epitaxial process and the ultrahigh (e 20/cm-3) The doping concentration of the silicon nitride is complex in preparation process and low in yield.
Therefore, finding a novel structure of a long-wavelength surface emitting laser and a process preparation method thereof becomes a problem to be solved by technical personnel in the field of long-wavelength vertical cavity surface emitting lasers.
Disclosure of Invention
The invention provides a vertical cavity surface emitting laser, an array and a manufacturing method, which improve the performance of a device and reduce the process difficulty.
In order to solve the above technical problem, the present invention provides a method for manufacturing a vertical cavity surface emitting laser, including:
s1, depositing and growing a lower DBR reflector layer, an N-type waveguide layer, a pump light active layer, a P-type waveguide layer, an oxidation limiting layer and a P-type GaAs cover layer on an N-type GaAs substrate in sequence to prepare a first epitaxial wafer serving as a pump;
s2, carrying out photoetching on the preset region of the P-type GaAs cover layer of the epitaxial wafer to obtain a vertical coupler structure;
s3, depositing a hetero-epitaxial InP buffer layer, an emitting light active layer and an InP waveguide layer on the upper surface of the first epitaxial wafer in sequence to obtain a second epitaxial wafer serving as a light emitter, wherein the pump is optically coupled with the light emitter through the vertical coupler structure;
s4, etching the upper surface of the second epitaxial wafer to manufacture a table board of the light emitter;
s5, growing an upper DBR mirror layer on the upper surface of the light emitter mesa;
s6, etching the upper DBR mirror layer to form a circular upper DBR mirror layer;
s7, arranging a P-face electrode layer on the upper surface of the second epitaxial wafer at a preset distance from the light emitter mesa and arranging an N-face electrode layer on the lower surface of the first epitaxial wafer;
further comprising: plating a high-reflection film layer on the surface of the short side of the table top of the illuminator;
the vertical coupler structure is a group of periodically distributed groove-shaped structures, and the ratio of the groove width in each groove-shaped structure to the distance between adjacent groove-shaped structures is 0.5-0.95.
Wherein the difference between the length of the table top of the pump and the length of the vertical coupler structure is 60-80 μm, and the width of the table top of the pump is the width minus 50 μm of the table top of the pump.
The length of the table top of the pump is 200-1000 microns, the width of the table top of the pump is 100-800 microns, and the ratio of the length to the width of the table top of the pump is 1: 1-5: 1.
The P-plane electrode layer comprises a transverse electrode plate and a longitudinal electrode plate, wherein the transverse electrode plate and the longitudinal electrode plate are connected with each other and parallel to the long side of the vertical coupler structure, and the longitudinal electrode plate and the short side of the vertical coupler structure are parallel to each other.
The distance between the transverse electrode plate and the long side of the vertical coupler structure is 5-20 microns, the distance between the longitudinal electrode plate and the short side of the vertical coupler structure is 10-30 microns, and the width ranges of the transverse electrode plate and the longitudinal electrode plate are 5-50 microns.
In addition, the embodiment of the invention also provides a manufacturing method of the vertical cavity surface emitting laser array, which comprises the manufacturing method of the vertical cavity surface emitting laser.
In addition, the embodiment of the invention also provides a vertical cavity surface emitting laser which comprises the laser manufactured by the manufacturing method of the vertical cavity surface emitting laser.
In addition, an embodiment of the present invention further provides a vertical cavity surface emitting laser array, including a plurality of vertical cavity surface emitting lasers arranged according to a preset array.
Compared with the prior art, the vertical cavity surface emitting laser, the array and the manufacturing method provided by the embodiment of the invention have the following advantages:
the vertical cavity surface emitting laser, the array and the manufacturing method are characterized in that a pumping light source is inserted into an emitting light source resonant cavity, pumping light emission of short wave 800nm to 1100nm is realized by using a GaAs material, and the pumping light horizontally oscillates; the vertical coupler structure has the functions of coupling pump light to a vertical surface for output and releasing lattice mismatch stress of an InP buffer layer in a hetero-epitaxial process on GaAs, so that the problems of small refractive index difference, high thermal resistance, lack of an effective photoelectric limit structure, high resistance of a P-type InP layer, serious heating and the like of a DBR reflector faced by a traditional InP-based long-wavelength vertical cavity surface emitting laser are completely structurally solved, the performance and reliability of a device are improved, photoelectric limit is formed without adopting a buried tunnel junction structure, the process is simple, and the process cost can be reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic flow chart illustrating steps of one embodiment of a method for fabricating a VCSEL provided herein;
FIG. 2 is a schematic structural diagram of one embodiment of a VCSEL provided herein;
FIG. 3 is a schematic structural diagram of another embodiment of a VCSEL provided herein;
FIG. 4 is a schematic structural diagram of one embodiment of a VCSEL array provided herein.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
1-4, FIG. 1 is a schematic flow chart illustrating steps of one embodiment of a method for fabricating a VCSEL provided herein; FIG. 2 is a schematic structural diagram of one embodiment of a VCSEL provided herein; FIG. 3 is a schematic structural diagram of another embodiment of a VCSEL provided herein; FIG. 4 is a schematic structural diagram of one embodiment of a VCSEL array provided herein.
In one embodiment, the method for fabricating a vertical cavity surface emitting laser includes:
s1, sequentially depositing and growing a lower DBR mirror layer 20, an N-type waveguide layer 30, a pump light active layer 40, a P-type waveguide layer 50, an oxidation limiting layer 60, and a P-type GaAs cap layer 70 on an N-type GaAs substrate 10 to prepare a first epitaxial wafer as a pump 100;
s2, carrying out photoetching on a preset region of the P-type GaAs cover layer 70 of the epitaxial wafer to obtain a vertical coupler structure 80;
s3, sequentially depositing a hetero-epitaxial InP buffer layer 210, an active light emitting layer 220, and an InP waveguide layer 230 on the upper surface of the first epitaxial wafer to obtain a second epitaxial wafer as a light emitter 200, wherein the pump 100 is optically coupled to the light emitter 200 through the vertical coupler structure 80;
s4, etching the upper surface of the second epitaxial wafer to manufacture a table board of the light emitter;
s5, growing an upper DBR mirror layer 240 on the upper surface of the emitter mesa;
s6, etching the upper DBR mirror layer to form a circular upper DBR mirror layer;
s7, disposing a P-side electrode layer 300 on the top surface of the second epitaxial wafer at a predetermined distance from the emitter mesa and disposing an N-side electrode layer 400 on the bottom surface of the first epitaxial wafer.
Inserting a pumping light source into a transmitting light source resonant cavity, and realizing pumping light emission of short wave 800nm to 1100nm by using a GaAs material, wherein the pumping light horizontally oscillates; the vertical coupler structure 80 has two functions of coupling pump light to a vertical surface for output and releasing lattice mismatch stress of the InP buffer layer 210 in the process of hetero-epitaxy on GaAs, thereby completely avoiding the problems of small refractive index difference, large thermal resistance, lack of an effective photoelectric limit structure, larger resistance of a P-type InP layer, serious heating and the like of a DBR reflector faced by the traditional InP-based long-wavelength vertical cavity surface emitting laser in structure, improving the performance and reliability of the device, forming photoelectric limit without adopting a buried tunnel junction structure, having simple process and being capable of reducing process cost.
The laser structure of the present invention includes two main parts, a pump 100 and a light emitter 200.
The pump mainly comprises an N-face electrode layer 400, an N-type GaAs substrate 10, a lower DBR mirror layer 20, an N-type waveguide layer 30, a pump light active layer 40, a P-type waveguide layer 50, an oxidation limiting layer 60, a P-type GaAs cover layer 70, a vertical coupler structure 80 and a P-face electrode layer 300; the light emitter 200 is epitaxially integrated with the pump 100 and comprises an InP buffer layer 210, an emitting light active layer 220, an InP waveguide layer 230, an upper DBR mirror layer 240;
the present invention is not limited to the above-mentioned layers, and the N-type waveguide layer 30 is made of AlGaAs, the Al composition range is 0.1 to 0.7, inclusive, and the thickness is one-fourth of the wavelength of the emitted light divided by the refractive index of the layer material multiplied by a positive integer;
the material of the pumping light active layer 40 is generally InGaAs/AlGaAs quantum well, the thickness of the InGaAs well layer ranges from 3nm to 20nm inclusive, the In component ranges from 0.05 to 0.5 inclusive; according to the difference of In components and the difference of the thicknesses of the well layers, the light-emitting waveband range of the pump light is 800nm to 1100 nm; the thickness range of the AlGaAs barrier layer is 5-20 nm, inclusive, and the range of the Al component is 0.05-0.5, inclusive;
the P-type waveguide layer 50 is typically made of AlGaAs, and the Al composition ranges from 0.1 to 0.7, inclusive, and has a thickness of one-quarter of the wavelength of the emitted light divided by the refractive index of the layer material multiplied by a positive integer;
the material of the oxidation limiting layer 60 is AlGaAs, the Al component is 0.98, the thickness range is 5 nm-15 nm, inclusive, and the material is oxidized into an insulating Al2O3 material through a wet oxidation process, the oxidation depth range is 10 mu m-100 mu m, inclusive; the function of the pump is to limit the current injected by the P-type electrode to the center of the active region of the pump;
the thickness range of the P-type GaAs cap layer 70 is 100nm to 1 μm, inclusive;
the pump 100 and the light emitter 200 are connected by a vertical coupler structure 80, the vertical coupler structure is a group of periodically distributed groove-shaped structures, the distance between adjacent groove-shaped structures is one half of the wavelength of the pump light divided by the effective refractive index of the pump, the distance between the groove width and the adjacent groove-shaped structures is 0.5 to 0.95 and comprises end points, the distance between the groove width and the adjacent groove-shaped structures is 50nm to 500nm and comprises end points, and the groove-shaped structures are prepared by a method of photoetching a P-type GaAs cover layer 70.
In one embodiment, the material of the lower DBR mirror layer 20 is periodically grown Al0.12GaAs/Al0.9GaAs, each layer has a thickness of one-quarter of the wavelength of the emitted light divided by the refractive index of the material, and has a period log range of 20 to 40 pairs inclusive and a total thickness range of 2 to 5 μm inclusive. The lower DBR mirror layer functions to reflect light emitted by the emitter back into the emitter, forming an emitted optical oscillation with the upper DBR.
In the present invention, the deposition method of each layer of the pump 100 is not limited, and the conventional MOCVD process may be used.
The light emitter 200 in the present invention comprises an InP buffer layer 210, an emission light active layer 220, an InP waveguide layer 230, an upper DBR mirror layer 240; the InP buffer layer 210 is hetero-integrated with the P-type GaAs cap layer 70, with a thickness in the range of 1 μm to 3 μm, and functions to change the material system from GaAs to InP, serving as a substrate for the growth of the light-emitting active layer 220 and the InP waveguide layer 230;
the light emitting active layer 220 includes an InGaAsP quantum well layer which is an intrinsic type, has a thickness ranging from 5nm to 15nm inclusive, an In composition ranging from 0.65 to 0.9 inclusive, and an InP barrier layer which is an intrinsic type, has a thickness ranging from 5nm to 50nm inclusive, and the light emitting active layer 220 emits light In a wavelength band ranging from 1.3 μm to 1.9 μm inclusive according to the In composition and the thickness of the well layer;
the InP waveguide layer 230 has a thickness in the range of 1 μm to 3 μm, inclusive, and is adjusted to have a thickness from the lower DBR mirror layer 20 to the upper DBR mirror layer 240 of one-half the wavelength of the emitted light divided by the effective refractive index of the material, so that the emitted light can oscillate and amplify between the lower DBR mirror layer 20 and the upper DBR mirror layer 240;
in one embodiment, the upper DBR mirror layer 240 comprises 4 periodic SiO2/TiO2 dielectric film materials, each having a thickness of one-quarter of the lasing wavelength divided by the refractive index of the material.
The pump structure is not limited in the present invention, and typically the pump mesa has a length in the range of 200 μm to 1000 μm, inclusive, and a width in the range of 100 μm to 800 μm, inclusive, and an aspect ratio in the range of 1:1 to 5:1, inclusive. For example, one choice of pump mesa dimensions may be 400 μm long by 200 μm wide, or 500 μm long by 200 μm wide, or 800 μm long by 100 μm wide.
The invention is not limited to the vertical coupler structure 80, the vertical coupler structure 80 is located in the center of a pump table, the vertical coupler is a group of periodically distributed groove-shaped structures, the adjacent groove-shaped interval is half of the pump light wavelength divided by the effective refractive index of the pump, the range of the groove width divided by the adjacent groove-shaped interval is 0.5 to 0.95, the groove depth range is 50nm to 500nm and contains end point values, generally, the groove-shaped length of the vertical coupler is the length minus 60 μm of the pump table, the width is the width minus 50 μm of the pump table, the total period logarithm range of the groove-shaped structures is 100 pairs to 1000 pairs and contains end point values, and the vertical coupler is prepared by a method of etching a P-type GaAs cover layer.
The present invention is not limited with respect to the etching process and the specific dimensional parameters of the vertical coupler structure 80.
The invention is not limited to the light emitter mesa configuration and dimensions, and in one embodiment the light emitter mesa is centered in the pump mesa, has a length of 10 μm minus the length of the vertical coupler structure 80 and a width of 2 μm plus the width of the vertical coupler, and the light emitter 200 mesa is formed by etching the upper DBR mirror layer 240, the InP waveguide layer 230, the light emitting active layer 220, and the InP buffer layer 210 as described above.
The upper DBR mirror layer 240 is generally circular in shape, centered on the pump mesa, with a diameter in the range of 3 to 50 μm, and the upper DBR mirror layer 240 is formed by etching.
The shape, position and material of the P-side electrode layer 300 are not limited in the present invention, and generally, the P-side electrode layer 300 includes a transverse electrode piece parallel to the long side of the vertical coupler structure 80 and a longitudinal electrode piece parallel to the short side, which are connected to each other.
The P-side electrode layer 300 is located on four sides of the vertical coupler structure 80, the electrodes on two sides of the long side of the vertical coupler structure 80 are within a range of 5 μm to 20 μm inclusive from the two long sides of the vertical coupler structure 80, the electrodes on two sides of the short side of the vertical coupler structure 80 are within a range of 10 μm to 30 μm inclusive from the two short sides of the vertical coupler structure 80, the electrode shape of the P-side electrode layer 300 is generally strip-shaped, and the strip width is within a range of 5 μm to 50 μm inclusive. That is, the distance between the transverse electrode pieces and the long side of the vertical coupler structure 80 is generally 5 to 20 μm, the distance between the longitudinal electrode pieces and the short side of the vertical coupler structure 80 is generally 10 to 30 μm, and the width of the transverse electrode pieces and the longitudinal electrode pieces is generally 5 to 50 μm.
In order to further improve the performance of the device, one embodiment further comprises: and plating a high-reflection film layer 250 on the surface of the short side of the table top of the light emitter. The high-reflection coating 250 is positioned on two sides of the long-wavelength vertical cavity surface emitting laser array table-board of the electro-optical pump, the center of a high-reflection wave band is the wavelength of the pumping light, the high-reflection coating 250 has the functions of reducing the loss of the cavity surface of the pumping light and reducing the threshold value of the pumping light, and the high-reflection coating 250 is formed by coating the cavity surfaces on two sides of the long edge of the device after the device is cleaved.
In addition, the embodiment of the invention also provides a manufacturing method of the vertical cavity surface emitting laser array, which comprises the manufacturing method of the vertical cavity surface emitting laser.
Since the laser manufactured by the method for manufacturing the vertical cavity surface emitting laser array has the same beneficial effects, the invention is not repeated herein.
In one embodiment, the long wavelength VCSEL array comprises 10 rows of repeating light bars, each comprising a vertical coupler 1005, a light emitter mesa 1004, an upper DBR mirror 1006, and a P-plane electrode layer 1003.
The length of the vertical coupler structure 1005 is the length minus 60 μm of the pump table top 1001, the width is the width minus 50 μm of the pump table top 1001, the vertical coupler 1005 is a group of periodically distributed groove structures, the adjacent groove spacing is half of the pump light wavelength divided by the effective refractive index of the pump, the range of the groove width divided by the adjacent groove spacing is 0.5 to 0.95, including end point values, the range of the groove depth is 50nm to 500nm, including end point values, the total period logarithm range of the groove structures is 2000 pairs to 20000 pairs, and the vertical coupler 1005 is prepared by a method of etching a P-type GaAs cover layer.
In one embodiment, the upper DBR mirror 1006 is circular in shape, 20 in number, horizontally aligned in a row with a pitch between adjacent circles in the range of 10 μm to 50 μm and a diameter in the range of 3 μm to 50 μm, and is formed by etching.
The P-plane electrodes 1003 are located on four sides of the vertical coupler 1005, the electrodes on two sides of the long side of the vertical coupler 1005 are 5 μm to 20 μm inclusive from the two long sides of the vertical coupler 1005, the electrodes on two sides of the short side of the vertical coupler 1005 are 10 μm to 30 μm inclusive from the two short sides of the vertical coupler 1005, and the P-plane electrodes 1003 are in the shape of a strip having a strip width ranging from 5 μm to 50 μm inclusive.
In one embodiment, the long wavelength vcsel array comprises a pump mesa 1001 and 10 rows of repeatedly arranged phosphor stripes, each of which comprises a vertical coupler 1005, a phosphor mesa 1004, an upper DBR reflector 1006, and a P-side electrode 1003, and further comprises a high reflective coating 1002;
the pump table 1001 has a length in the range of 1mm to 3mm, inclusive, and a width in the range of 1mm to 3mm, inclusive.
In addition, the embodiment of the invention also provides a vertical cavity surface emitting laser which comprises the laser manufactured by the manufacturing method of the vertical cavity surface emitting laser. Since the vertical cavity surface emitting laser is a laser manufactured by the above method for manufacturing a vertical cavity surface emitting laser, the same beneficial effects should be obtained, and the detailed description thereof is omitted in the present invention.
In addition, an embodiment of the present invention further provides a vertical cavity surface emitting laser array, including a plurality of vertical cavity surface emitting lasers arranged according to a preset array.
The vertical cavity surface emitting laser array generally adopts a vertical cavity surface emitting laser array manufacturing method, and the vertical cavity surface emitting lasers are arranged and arranged, so that the same beneficial effects are achieved, and the invention is not repeated in detail.
In summary, in the vertical cavity surface emitting laser, the array and the manufacturing method provided in the embodiments of the present invention, the pump light source is inserted into the transmitting light source resonant cavity, and the GaAs material is used to realize the pumping light emission with a short wavelength of 800nm to 1100nm, and the pumping light oscillates horizontally; the vertical coupler structure has the functions of coupling pump light to a vertical surface for output and releasing lattice mismatch stress of an InP buffer layer in a hetero-epitaxial process on GaAs, so that the problems of small refractive index difference, high thermal resistance, lack of an effective photoelectric limit structure, high resistance of a P-type InP layer, serious heating and the like of a DBR reflector faced by a traditional InP-based long-wavelength vertical cavity surface emitting laser are completely structurally solved, the performance and reliability of a device are improved, photoelectric limit is formed without adopting a buried tunnel junction structure, the process is simple, and the process cost can be reduced.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. A method for manufacturing a vertical cavity surface emitting laser includes:
s1, depositing and growing a lower DBR reflector layer, an N-type waveguide layer, a pump light active layer, a P-type waveguide layer, an oxidation limiting layer and a P-type GaAs cover layer on an N-type GaAs substrate in sequence to prepare a first epitaxial wafer serving as a pump;
s2, carrying out photoetching on the preset region of the P-type GaAs cover layer of the epitaxial wafer to obtain a vertical coupler structure;
s3, depositing a hetero-epitaxial InP buffer layer, an emitting light active layer and an InP waveguide layer on the upper surface of the first epitaxial wafer in sequence to obtain a second epitaxial wafer serving as a light emitter, wherein the pump is optically coupled with the light emitter through the vertical coupler structure;
s4, etching the upper surface of the second epitaxial wafer to manufacture a table board of the light emitter;
s5, growing an upper DBR mirror layer on the upper surface of the light emitter mesa;
s6, etching the upper DBR mirror layer to form a circular upper DBR mirror layer;
s7, arranging a P-face electrode layer on the upper surface of the second epitaxial wafer at a preset distance from the light emitter mesa and arranging an N-face electrode layer on the lower surface of the first epitaxial wafer;
further comprising: plating a high-reflection film layer on the surface of the short side of the table top of the illuminator;
the vertical coupler structure is a group of periodically distributed groove-shaped structures, and the ratio of the groove width in each groove-shaped structure to the distance between adjacent groove-shaped structures is 0.5-0.95.
2. A method as claimed in claim 1, wherein the difference between the length of the mesa of the pump and the length of the vertical coupler structure is 60 μm to 80 μm, and the width of the mesa of the pump is the width of the mesa of the pump minus 50 μm.
3. A method for fabricating a vertical cavity surface emitting laser according to claim 2, wherein the length of the mesa of the pump is 200 μm to 1000 μm, the width is 100 μm to 800 μm, and the ratio of the length to the width of the mesa of the pump is 1:1 to 5: 1.
4. A method of fabricating a vertical cavity surface emitting laser according to claim 3, wherein said P-plane electrode layer includes a transverse electrode piece parallel to a long side and a longitudinal electrode piece parallel to a short side of said vertical coupler structure, which are connected to each other.
5. A method for fabricating a vertical cavity surface emitting laser according to claim 4, wherein the distance between said lateral electrode pads and the long side of said vertical coupler structure is 5 μm to 20 μm, the distance between said longitudinal electrode pads and the short side of said vertical coupler structure is 10 μm to 30 μm, and the width of said lateral electrode pads and said longitudinal electrode pads is 5 μm to 50 μm.
6. A method of fabricating a vertical cavity surface emitting laser array comprising using the method of fabricating a vertical cavity surface emitting laser according to any of claims 1 to 5.
7. A vertical cavity surface emitting laser comprising a laser fabricated by the method of fabricating a vertical cavity surface emitting laser according to any one of claims 1 to 5.
8. A vertical cavity surface emitting laser array comprising a plurality of vertical cavity surface emitting lasers according to claim 7 arranged in a predetermined array.
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| CN101093931A (en) * | 2006-06-22 | 2007-12-26 | 中国科学院半导体研究所 | Long wavelength laser transmitted perpendicular to surface of cavity by using integrated pumping light source |
| CN101521353A (en) * | 2009-04-08 | 2009-09-02 | 中国科学院长春光学精密机械与物理研究所 | Vertical cavity surface emitting laser (VCSEL) capable of controlling polarization through emergent light window electrode structure |
| CN101588017A (en) * | 2008-05-21 | 2009-11-25 | 中国科学院半导体研究所 | Photonic crystal vertical cavity surface emitting laser with single module, large power and low divergence angle |
| CN101667715A (en) * | 2008-09-03 | 2010-03-10 | 中国科学院半导体研究所 | Single-mode high-power vertical cavity surface emitting laser and manufacturing method thereof |
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| US6816526B2 (en) * | 2001-12-28 | 2004-11-09 | Finisar Corporation | Gain guide implant in oxide vertical cavity surface emitting laser |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101093931A (en) * | 2006-06-22 | 2007-12-26 | 中国科学院半导体研究所 | Long wavelength laser transmitted perpendicular to surface of cavity by using integrated pumping light source |
| CN101588017A (en) * | 2008-05-21 | 2009-11-25 | 中国科学院半导体研究所 | Photonic crystal vertical cavity surface emitting laser with single module, large power and low divergence angle |
| CN101667715A (en) * | 2008-09-03 | 2010-03-10 | 中国科学院半导体研究所 | Single-mode high-power vertical cavity surface emitting laser and manufacturing method thereof |
| CN101521353A (en) * | 2009-04-08 | 2009-09-02 | 中国科学院长春光学精密机械与物理研究所 | Vertical cavity surface emitting laser (VCSEL) capable of controlling polarization through emergent light window electrode structure |
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