CN114498281B - Semiconductor laser using P-type substrate and preparation method thereof - Google Patents
Semiconductor laser using P-type substrate and preparation method thereof Download PDFInfo
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- CN114498281B CN114498281B CN202210134222.7A CN202210134222A CN114498281B CN 114498281 B CN114498281 B CN 114498281B CN 202210134222 A CN202210134222 A CN 202210134222A CN 114498281 B CN114498281 B CN 114498281B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a semiconductor laser adopting a P-type substrate, which comprises the following components: a P-type substrate; a P-type buffer layer, a P-type transmission layer and a P-type limiting layer are sequentially epitaxially grown on the P-type substrate; forming a P-type waveguide layer on the P-type confinement layer; forming an active layer on the P-type waveguide layer; an N-type waveguide layer is formed on the active layer, and the thickness of the N-type waveguide layer is larger than that of the P-type waveguide layer; forming a laminated structure on the N-type waveguide layer, wherein the laminated structure comprises an N-type limiting layer, an N-type buffer layer and an N-type ohmic contact layer which are sequentially formed; wherein the stack is etched from the stack surface to form a ridge waveguide, the ridge waveguide being closer to the N-type waveguide layer than to the P-type waveguide layer. According to the laser provided by the invention, the ridge waveguide is closer to the N-type waveguide layer than the P-type waveguide layer, so that the ridge waveguide is closer to the optical field, and better feedback is provided for the optical field.
Description
Technical Field
At least one embodiment of the invention relates to a semiconductor laser, in particular to a semiconductor laser adopting a P-type substrate and a preparation method thereof.
Background
As semiconductor lasers are used in more fields, there is a higher demand for device performance of semiconductor lasers, and it is desired to obtain semiconductor lasers with narrower linewidths and higher output powers. One factor that restricts the semiconductor laser from realizing high power output is that the emission wavelength of the semiconductor laser changes with temperature under high power, which makes it particularly important to solve the problem of heat dissipation of the laser. Another factor is the requirement for narrow linewidths, which has led to the introduction of Distributed Bragg Reflector Structures (DBRs) in semiconductor lasers, where the coupling efficiency of the DBRs is also a problem that has been studied in the relevant field.
Disclosure of Invention
In view of the above, the present invention provides a semiconductor laser using a P-type substrate to solve at least one of the above or other problems in the prior art.
According to an aspect of the present invention, there is provided a semiconductor laser employing a P-type substrate, comprising: a P-type substrate; a P-type buffer layer, a P-type transmission layer and a P-type limiting layer are sequentially epitaxially grown on the P-type substrate; forming a P-type waveguide layer on the P-type confinement layer; forming an active layer on the P-type waveguide layer; an N-type waveguide layer is formed on the active layer, and the thickness of the N-type waveguide layer is larger than that of the P-type waveguide layer; forming a laminated structure on the N-type waveguide layer, wherein the laminated structure comprises an N-type limiting layer, an N-type buffer layer and an N-type ohmic contact layer which are sequentially formed; wherein the stack is etched from the stack surface to form a ridge waveguide, the ridge waveguide being closer to the N-type waveguide layer than to the P-type waveguide layer.
In some embodiments, a distributed Bragg reflector structure is fabricated on the ridge waveguide.
In some embodiments, the ridge waveguide has a ridge width of 1-200 μm and a ridge height of 100 nm-10 μm.
In some embodiments, the period of the distributed Bragg reflector structure is 10nm to 10 μm.
In some embodiments, the thickness of the P-type waveguide layer is 100-500 nm; the thickness of the N-type waveguide layer is 100-1000 nm.
In some embodiments, the material of the active layer comprises InGaAs/InP, inGaAs/GaAs, inGaAs/AlGaAs, inGaAs/GaAsP, or InGaAs/InGaAsP; the thickness of the active layer is 10-200nm; the number of quantum wells of the active layer is 1-5.
In some embodiments, the doping concentration of the P-type substrate is 1×10 18 ～3×10 19 cm -3 。
In some embodiments, the P-type buffer layer has a doping concentration of 1×10 18 ～3×10 19 cm -3 The thickness is 100-800nm; the doping concentration of the P-type transmission layer is 1 multiplied by 10 18 ～3×10 19 cm -3 The thickness is 100-800nm; the doping concentration of the P-type limiting layer is 5 multiplied by 10 17 ～3×10 19 cm -3 The thickness is 100-2000 nm; the doping concentration of the P-type waveguide layer is 0-3 multiplied by 10 19 cm -3 。
In some embodiments, the N-type waveguide layer has a doping concentration of 5×10 16 ～3×10 19 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentration of the N-type limiting layer is 5 multiplied by 10 16 ～3×10 19 cm -3 The thickness is 100-2000 nm; the doping concentration of the N-type buffer layer is 5 multiplied by 10 16 ～3×10 19 cm -3 The thickness is 100-2000 nm; the doping concentration of the N-type ohmic contact layer is 5 multiplied by 10 16 ～3×10 19 cm -3 The thickness is 100-1000 nm.
The invention also provides a preparation method of the semiconductor laser, which comprises the following steps: sequentially epitaxially growing a P-type buffer layer, a P-type transmission layer and a P-type limiting layer on the upper surface of the P-type substrate by using a metal organic compound chemical vapor deposition technology; forming a P-type waveguide layer on the P-type confinement layer; forming an active layer on the P-type waveguide layer; forming an N-type waveguide layer on the active layer, wherein the thickness of the N-type waveguide layer is greater than that of the P-type waveguide layer; forming a laminated structure on the N-type waveguide layer, wherein the laminated structure comprises an N-type limiting layer, an N-type buffer layer and an N-ohm contact layer which are sequentially formed; etching the laminated structure from the surface of the laminated structure to form a ridge waveguide; forming an N-type electrode on the ridge waveguide by utilizing a magnetron sputtering technology; and forming a P-type electrode on the lower surface of the P-type substrate.
According to the semiconductor laser adopting the P-type substrate provided by the embodiment of the invention, the optical field is distributed on the N-type waveguide layer more than the P-type waveguide layer by designing that the thickness of the N-type waveguide layer is larger than that of the P-type waveguide layer; the semiconductor laser with the P-type substrate is designed, and the ridge waveguide and the DBR structure are manufactured on the surface of the semiconductor laser, so that the ridge waveguide and the DBR structure are closer to the N-type waveguide layer relative to the P-type waveguide layer, the ridge waveguide and the DBR structure are closer to the optical field, and better feedback can be realized on the optical field.
Drawings
Fig. 1 is a schematic perspective view of a semiconductor laser employing a P-type substrate according to one embodiment of the present invention;
fig. 2 is a schematic perspective view of a semiconductor laser employing a P-type substrate according to another embodiment of the present invention;
FIG. 3 is a graph of refractive index profile versus optical field profile for a semiconductor laser employing an N-type substrate; and
fig. 4 is a graph of refractive index profile versus optical field profile of a semiconductor laser employing a P-type substrate in accordance with one embodiment of the present invention.
[ reference numerals description ]
A 1-P type substrate;
a 2-P type buffer layer;
a 3-P type transmission layer;
a 4-P type confinement layer;
a 5-P type waveguide layer;
6-an active layer;
a 7-N type waveguide layer;
an 8-N type confinement layer;
9-N type buffer layer;
a 10-N type ohmic contact layer;
11-ridge waveguide;
12-distributed bragg mirror structure.
Detailed Description
The present invention will be further described in detail below with reference to specific embodiments and with reference to the accompanying drawings, in order to make the objects, technical solutions and advantages of the present invention more apparent.
The present invention provides a semiconductor laser using a P-type substrate, as shown with reference to fig. 1, comprising: a P-type substrate 1; a P-type buffer layer 2, a P-type transmission layer 3 and a P-type limiting layer 4 are sequentially epitaxially grown on a P-type substrate 1; a P-type waveguide layer 5 is formed on the P-type confinement layer 4; an active layer 6 is formed on the P-type waveguide layer 5; an N-type waveguide layer 7 is formed on the active layer 6, and the thickness of the N-type waveguide layer 7 is greater than that of the P-type waveguide layer 5; forming a laminated structure on the N-type waveguide layer 7, wherein the laminated structure comprises an N-type limiting layer 8, an N-type buffer layer 9 and an N-type ohmic contact layer 10 which are sequentially formed; wherein the stack is etched from the stack surface to form a ridge waveguide 11, the ridge waveguide 11 being closer to the N-type waveguide layer 7 than to the P-type waveguide layer 5.
According to an embodiment of the present invention, the ridge width of the ridge waveguide 11 is 1 to 200 μm, and may be, for example, 5 μm, 20 μm, 50 μm, 100 μm, 200 μm; the ridge height of the ridge waveguide 11 is 100nm to 10 μm, and may be, for example, 100nm, 500nm, 1200nm, 2000nm, 5000nm.
According to an embodiment of the present invention, as shown with reference to fig. 2, a distributed bragg mirror structure (DBR structure) 12 is fabricated on a ridge waveguide 11.
According to an embodiment of the invention, the period of the distributed Bragg mirror structure 12 is 10 nm-10 μm, for example, may be 204nm.
It should be noted that, the internal loss of the semiconductor laser is mainly caused by light absorption caused by scattering of photons by free carriers in each layer, and the hole light absorption coefficient in the P-type waveguide layer is far greater than the electron light absorption coefficient in the N-type waveguide layer, so in order to obtain lower loss, more optical field is generally distributed in the N-type waveguide layer.
Fig. 3 is a graph of refractive index profile versus optical field profile for a semiconductor laser employing an N-type substrate.
Referring to fig. 3, the semiconductor laser using the N-type substrate uses the N-type semiconductor material as the substrate, the N-type waveguide layer 7 is designed to have a thickness larger than that of the P-type waveguide layer 5, so that the optical field is more distributed near the N-type waveguide layer, and when the ridge waveguide and the DBR structure are etched on the surface of the laser, the ridge waveguide and the DBR structure are far away from the N-type waveguide layer, that is, the ridge waveguide and the DBR structure are far away from the optical field, where E represents the optical field, N represents the refractive index of each layer in the semiconductor laser, 7 represents the N-type waveguide layer of the semiconductor laser using the N-type substrate, and 5 represents the P-type waveguide layer of the semiconductor laser using the N-type substrate.
Fig. 4 is a graph of refractive index profile versus optical field profile of a semiconductor laser employing a P-type substrate in accordance with one embodiment of the present invention.
Referring to fig. 4, the semiconductor laser using the P-type substrate uses the P-type semiconductor material as the substrate, by designing the thickness of the N-type waveguide layer 7 to be greater than that of the P-type waveguide layer 5, the optical field is more distributed near the N-type waveguide layer 7, and when the ridge waveguide 11 and the DBR structure 12 are etched on the surface of the semiconductor laser, the ridge waveguide 11 and the DBR structure 12 are closer to the N-type waveguide layer 7, that is, the ridge waveguide 11 and the DBR structure 12 are closer to the optical field, so that better optical feedback is obtained, where E represents the optical field, N represents the refractive index of each layer in the semiconductor laser, 7 represents the N-type waveguide layer of the semiconductor laser using the P-type substrate, and 5 represents the P-type waveguide layer of the semiconductor laser using the P-type substrate.
According to the embodiment of the invention, the optical field is distributed on the N-type waveguide layer more than the P-type waveguide layer by designing that the thickness of the N-type waveguide layer is larger than that of the P-type waveguide layer; the semiconductor laser with the P-type substrate is designed, and the ridge waveguide and the DBR structure are manufactured on the surface of the semiconductor laser, so that the ridge waveguide and the DBR structure are closer to the N-type waveguide layer relative to the P-type waveguide layer, the ridge waveguide and the DBR structure are closer to the optical field, and better feedback can be realized on the optical field.
According to an embodiment of the present invention, the doping concentration of the P-type substrate 1 is 1×10 18 ～3×10 19 cm -3 For example, the doping concentration may be 1×10 18 cm -3 。
According to an embodiment of the present invention, the doping concentration of the P-type buffer layer 2 is 1×10 18 ～3×10 19 cm -3 The thickness is 100-800nm; for example, the doping concentration may be 1×10 18 cm -3 The thickness may be 300nm.
According to an embodiment of the present invention, the doping concentration of the P-type transmission layer 3 is 1×10 18 ～3×10 19 cm -3 The thickness is 100-800nm; for example, the doping concentration may be 1×10 18 cm -3 The thickness can be 200nm。
According to an embodiment of the present invention, the doping concentration of the P-type confinement layer 4 is 5×10 17 -3×10 19 cm -3 The thickness is 100-2000 nm; for example, the doping concentration may be 5×10 17 cm -3 The thickness may be 1200nm.
According to an embodiment of the present invention, the doping concentration of the P-type waveguide layer 5 is 0 to 3×10 19 cm -3 For example, the doping concentration may be 0 and the thickness of the p-type waveguide layer 5 may be 100 to 500nm.
According to an embodiment of the invention, the material of the active layer 6 comprises InGaAs/InP, inGaAs/GaAs, inGaAs/AlGaAs, inGaAs/GaAsP or InGaAs/InGaAsP.
According to an embodiment of the present invention, the thickness of the active layer 6 is 10 to 200nm, for example, the thickness may be 10nm, 40nm, 800nm, 100nm, 200nm.
According to an embodiment of the present invention, the number of quantum wells of the active layer 6 is 1 to 5.
According to an embodiment of the present invention, the doping concentration of the N-type waveguide layer 7 is 5×10 16 ～3×10 19 cm -3 For example, it may be 5X 10 16 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The thickness of the N-type waveguide layer 7 is 100-1000 nm.
According to an embodiment of the present invention, the thickness of the P-type waveguide layer 5 is smaller than the thickness of the N-type waveguide layer 7; for example, the thickness of the P-type waveguide layer 5 may be 300nm and the thickness of the n-type waveguide layer 7 may be 500nm.
According to the embodiment of the invention, the thickness of the P-type waveguide layer 5 is smaller than that of the N-type waveguide layer 7, and compared with a semiconductor laser adopting an N-type substrate, the semiconductor laser adopting a P-type substrate has a shorter distance from the active layer 6 to a packaging heat dissipation table when being packaged, thereby being beneficial to better heat dissipation effect of the semiconductor laser and further prolonging the service life of the semiconductor laser. Wherein the package heat sink is located at the back of the P-type substrate 1.
According to an embodiment of the present invention, the doping concentration of the N-type confinement layer 8 is 5×10 16 ～3×10 19 cm -3 For example, it may be 5X 10 16 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The thickness of the N-type limiting layer 8 is100-2000nm, for example, 100nm, 500nm, 1000nm, 1500nm, 2000nm.
According to an embodiment of the present invention, the N-type buffer layer 9 has a doping concentration of 5×10 16 ～3×10 19 cm -3 For example, it may be 1X 10 18 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The thickness is 100 to 2000nm, for example, 100nm, 300nm, 1000nm, 1500nm, 2000nm.
According to an embodiment of the present invention, the doping concentration of the N-type ohmic contact layer 10 is 5×10 16 -3×10 19 cm -3 For example, it may be 1X 10 19 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The thickness is 100 to 1000nm, for example, 100nm, 400nm, 1000nm, 1500nm, 2000nm.
According to an embodiment of the present invention, a current injection window is formed on the N-type ohmic contact layer 10.
The invention also provides a preparation method of the semiconductor laser, which comprises the following steps: sequentially epitaxially growing a P-type buffer layer 2, a P-type transmission layer 3 and a P-type limiting layer 4 on the upper surface of a P-type substrate 1 by using a metal organic compound chemical vapor deposition technology; forming a P-type waveguide layer 5 on the P-type confinement layer 4; forming an active layer 6 on the P-type waveguide layer 5; forming an N-type waveguide layer 7 on the active layer 6, wherein the thickness of the N-type waveguide layer 7 is greater than the thickness of the P-type waveguide layer 5; forming a laminated structure on the N-type waveguide layer 7, wherein the laminated structure comprises an N-type limiting layer 8, an N-type buffer layer 9 and an N ohmic contact layer 10 which are sequentially formed; etching the laminated structure from the surface of the laminated structure to form a ridge waveguide 11; forming an N-type electrode (not shown) on the ridge waveguide 11 using a magnetron sputtering technique; a P-type electrode (not shown in the drawing) is formed on the lower surface of the P-type substrate 1.
According to the semiconductor laser adopting the P-type substrate provided by the embodiment of the invention, the optical field is distributed on the N-type waveguide layer more than the P-type waveguide layer by designing that the thickness of the N-type waveguide layer is larger than that of the P-type waveguide layer; the semiconductor laser with the P-type substrate is designed, and the ridge waveguide and the DBR structure are manufactured on the surface of the semiconductor laser, so that the ridge waveguide and the DBR structure are closer to the N-type waveguide layer relative to the P-type waveguide layer, the ridge waveguide and the DBR structure are closer to the optical field, and better feedback can be realized on the optical field.
According to the semiconductor laser adopting the P-type substrate provided by the embodiment of the invention, the thickness of the P-type waveguide layer is smaller than that of the N-type waveguide layer, and compared with the semiconductor laser adopting the N-type substrate, the semiconductor laser adopting the P-type substrate has the advantages that the distance from the active layer to the packaging cooling table is closer when being packaged, and the semiconductor laser is beneficial to obtaining better cooling effect.
The foregoing description of the embodiments has been provided for the purpose of illustrating the general principles of the invention, and is not meant to limit the invention thereto, but to limit the invention thereto, and any modifications, equivalents, improvements and equivalents thereof may be made without departing from the spirit and principles of the invention.
Claims (11)
1. A semiconductor laser employing a P-type substrate, comprising:
a P-type substrate;
a P-type buffer layer, a P-type transmission layer and a P-type limiting layer are sequentially epitaxially grown on the P-type substrate;
forming a P-type waveguide layer on the P-type confinement layer;
forming an active layer on the P-type waveguide layer;
forming an N-type waveguide layer on the active layer, wherein the thickness of the N-type waveguide layer is larger than that of the P-type waveguide layer;
forming a laminated structure on the N-type waveguide layer, wherein the laminated structure comprises an N-type limiting layer, an N-type buffer layer and an N-type ohmic contact layer which are formed in sequence;
and etching the laminated structure from the surface of the laminated structure to form a ridge waveguide, so that the ridge waveguide is closer to the N-type waveguide layer than the P-type waveguide layer.
2. The semiconductor laser of claim 1, wherein the ridge waveguide has a distributed bragg mirror structure fabricated thereon.
3. The semiconductor laser according to claim 1, wherein a ridge width of the ridge waveguide is 1 to 200 μm and a ridge height of the ridge waveguide is 100nm to 10 μm.
4. The semiconductor laser of claim 2, wherein the period of the distributed bragg mirror structure is 10nm to 10 μm.
5. The semiconductor laser of claim 1, wherein the thickness of the P-type waveguide layer is 100-500 nm;
the thickness of the N-type waveguide layer is 100-1000 nm.
6. The semiconductor laser of claim 1, wherein the material of the active layer comprises InGaAs/InP, inGaAs/GaAs, inGaAs/AlGaAs, inGaAs/GaAsP, or InGaAs/InGaAsP.
7. The semiconductor laser according to claim 6, wherein the thickness of the active layer is 10 to 200nm;
the number of quantum wells of the active layer is 1-5.
8. The semiconductor laser of claim 1, wherein the P-type substrate has a doping concentration of 1 x 10 18 ~3×10 19 cm -3 。
9. The semiconductor laser of claim 1, wherein the P-type buffer layer has a doping concentration of 1 x 10 18 ~3×10 19 cm -3 The thickness is 100-800nm;
the doping concentration of the P-type transmission layer is 1 multiplied by 10 18 ~3×10 19 cm -3 The thickness is 100-800nm;
the doping concentration of the P-type limiting layer is 5 multiplied by 10 17 ~3×10 19 cm -3 The thickness is 100-2000 nm;
the doping concentration of the P-type waveguide layer is 0-3 multiplied by 10 19 cm -3 。
10. The semiconductor laser of claim 1, wherein the N-type waveguide layer has a doping concentration of 5 x 10 16 ~3×10 19 cm -3 ；
The doping concentration of the N-type limiting layer is 5 multiplied by 10 16 ~3×10 19 cm -3 The thickness is 100-2000 nm;
the doping concentration of the N-type buffer layer is 5 multiplied by 10 16 ~3×10 19 cm -3 The thickness is 100-2000 nm;
the doping concentration of the N-type ohmic contact layer is 5 multiplied by 10 16 ~3×10 19 cm -3 The thickness is 100-1000 nm.
11. The method for manufacturing a semiconductor laser according to any one of claims 1 to 10, comprising:
sequentially epitaxially growing a P-type buffer layer, a P-type transmission layer and a P-type limiting layer on the upper surface of the P-type substrate by using a metal organic compound chemical vapor deposition technology;
forming a P-type waveguide layer on the P-type confinement layer;
forming an active layer on the P-type waveguide layer;
forming an N-type waveguide layer on the active layer, wherein the thickness of the N-type waveguide layer is greater than that of the P-type waveguide layer;
forming a laminated structure on the N-type waveguide layer, wherein the laminated structure comprises an N-type limiting layer, an N-type buffer layer and an N-ohm contact layer which are formed in sequence;
etching the laminated structure from the surface of the laminated structure to form a ridge waveguide;
forming an N-type electrode on the ridge waveguide by utilizing a magnetron sputtering technology;
and forming a P-type electrode on the lower surface of the P-type substrate.
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| 基于SiGeSn的量子阱激光器的研究;马进阁;《中国优秀硕士学位论文全文数据库信息科技辑》(第04期);第 I135-102页 * |
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