CN111289105A - Purple infrared dual wavelength composite detector - Google Patents

Purple infrared dual wavelength composite detector Download PDF

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Publication number
CN111289105A
CN111289105A CN202010274303.8A CN202010274303A CN111289105A CN 111289105 A CN111289105 A CN 111289105A CN 202010274303 A CN202010274303 A CN 202010274303A CN 111289105 A CN111289105 A CN 111289105A
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Prior art keywords
resistor
pin
capacitor
circuit
central processor
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Chinese (zh)
Inventor
周海明
黄腾飞
游述怀
甘孝冬
田超
罗智威
杜胜球
车波
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Yueyang Mapower Thermprocess & Electromagnetic Technology Co ltd
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Yueyang Mapower Thermprocess & Electromagnetic Technology Co ltd
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Priority to CN202010274303.8A priority Critical patent/CN111289105A/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
    • F23M—CASINGS, LININGS, WALLS OR DOORS SPECIALLY ADAPTED FOR COMBUSTION CHAMBERS, e.g. FIREBRIDGES; DEVICES FOR DEFLECTING AIR, FLAMES OR COMBUSTION PRODUCTS IN COMBUSTION CHAMBERS; SAFETY ARRANGEMENTS SPECIALLY ADAPTED FOR COMBUSTION APPARATUS; DETAILS OF COMBUSTION CHAMBERS, NOT OTHERWISE PROVIDED FOR
    • F23M11/00—Safety arrangements
    • F23M11/04—Means for supervising combustion, e.g. windows
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/429—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to measurement of ultraviolet light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J2001/4247—Photometry, e.g. photographic exposure meter using electric radiation detectors for testing lamps or other light sources

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

The invention discloses a purple infrared dual-wavelength composite detector, which comprises a central processor unit circuit, an ultraviolet detection circuit, an infrared detection circuit, a digital display circuit, a flame intensity output circuit, a fire relay contact switch output circuit and a circuit fault diagnosis alarm output circuit. The central processor unit circuit comprises an STM32F103RXT6 central processor U1, a first crystal oscillator circuit, a second crystal oscillator circuit and a reset circuit. The invention adopts the probes with purple and infrared different wavelengths to respectively collect light signals in different wavelength areas of the flame, the light signals are processed by the internal program of the central processor and compared and controlled with the relevant background threshold value and bandwidth prestored value in the memory, the flame existence and the flame intensity can be accurately judged and output under various working conditions, the reliability of the flame sensor is improved, and the invention has the self-diagnosis function and can regularly detect, diagnose and output main devices of the circuit.

Description

Purple infrared dual wavelength composite detector
Technical Field
The invention belongs to the field of flame monitors, and particularly relates to a purple infrared dual-wavelength composite detector.
Background
Various industrial furnaces are applied in the fields of petroleum, chemical industry, electric power steel and environmental protection, and a flame monitor is a core device for ensuring the safe operation of the industrial furnaces, so that the performance of the flame monitor determines the performance of an industrial furnace system.
The flame in the hearth of an industrial furnace is characterized as follows: firstly, a large amount of light rays can be radiated when the flame burns, the flame spectrum is continuous, the range is wide, and the wavelength with stronger pulsatility sequentially comprises an ultraviolet ray region, a visible light region and a far infrared ray region from small to large; secondly, with the improvement of energy conservation and environmental protection and the improvement of waste utilization requirements, the types of burning fuels (such as gas fuel, liquid fuel, solid fuel and gas-liquid phase composite fuel thereof) are more and more complicated, and the fuel components and the heat value are changed. Different combustion conditions, particularly conditions in which fuel properties and components change more frequently, have increasingly higher requirements on flame sensors. The single ultraviolet and infrared flame sensor is difficult to meet the requirements of the complex working conditions.
Disclosure of Invention
The invention aims to solve the technical problem that the existing flame sensor is difficult to meet the requirements of complex working conditions, and provides a purple infrared dual-wavelength composite detector which integrates a purple infrared probe, can meet the requirements of complex working conditions and improves the reliability and accuracy of flame detection.
In order to solve the technical problems, the invention adopts the following technical scheme:
a purple infrared dual-wavelength composite detector comprises a central processor unit circuit, and an ultraviolet detection circuit, an infrared detection circuit, a digital display circuit, a flame intensity output circuit, a fire relay contact switch output circuit and a circuit fault diagnosis alarm output circuit which are respectively connected with the central processor unit circuit.
The central processor unit circuit comprises an STM32F103RXT6 central processor U1, and a first crystal oscillator circuit, a second crystal oscillator circuit and a reset circuit which are respectively connected with the STM32F103RXT6 central processor U1.
In one embodiment, the STM32F103RXT6 central processor U1 is an embedded ARM processor, with up to 72MHz operating frequency, and 2 embedded 2-bit analog/digital converter circuits.
In one embodiment, the ultraviolet detection circuit detects 0.19-0.29 μm ultraviolet light, and the ultraviolet detection circuit comprises an ultraviolet photosensitive tube J1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, a sixth capacitor C6, a seventh capacitor C7, an eighth capacitor C8, a ninth capacitor C9, a first diode V1, a second diode V2 and a first operational amplifier U2-1.
A sixth capacitor C6 and a seventh capacitor C7 are respectively connected to two ends of the second resistor R2, one end of the second resistor R2 is connected to a 300V power supply, the other end of the second resistor R2 is connected to one end of the ultraviolet photosensitive tube J1, the other end of the ultraviolet photosensitive tube J1 is respectively connected to one ends of the third resistor R3, the first diode V1, the second diode V2, the eighth capacitor C8 and the fourth resistor R4, the other end of the third resistor is grounded, the other end of the first diode V1 is connected to a 5V power supply, the other end of the second diode V2 is grounded, the other end of the eighth capacitor C8 is grounded, the other end of the fourth resistor R4 is connected to the 3 pin of the first operational amplifier U2-1, the 1 pin of the first operational amplifier U2-1 is respectively connected to one end of the sixth resistor R6, the seventh resistor R7 and the ninth capacitor C9, the other end of the ninth capacitor C9 is connected to one end of the fifth resistor R6955, the first operational amplifier U82861 is respectively connected to the fifth resistor R8653, the end of the fifth resistor R5 far away from the 2-pin of the first operational amplifier U2-1 is grounded, and the end of the sixth resistor R6 far away from the 1-pin of the first operational amplifier U2-1 is connected with the PA2 pin of the STM32F103RXT6 central processor U1.
In one embodiment, the infrared detection circuit detects 4.20-4.50 μm infrared light, and the infrared detection circuit comprises an infrared probe J2, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, an eleventh resistor R11, a twelfth resistor R12, a tenth capacitor C10, an eleventh capacitor C11, a twelfth capacitor C12, a thirteenth capacitor C13 and a second operational amplifier U2-2.
The infrared probe J2 is respectively connected with a 5V power supply, ground, a seventh resistor R7 and one end of a tenth capacitor C10, the other end of the seventh resistor R7 is grounded, the other end of the tenth capacitor is respectively connected with an eleventh capacitor C11 and an eighth resistor R8, one end of a twelfth capacitor C12 is connected, the other end of the twelfth capacitor C12 is connected with one end of a ninth resistor R9, the other end of the ninth resistor is connected with a pin 5 of a second operational amplifier U2-2, a pin 7 of the second operational amplifier U2-2 is respectively connected with one ends of a twelfth resistor R12, an eleventh resistor R11 and a thirteenth capacitor C13, a pin 6 of the second operational amplifier U2-2 is respectively connected with a pin 6 of an eleventh resistor R11, the other end of a thirteenth capacitor C13 and one end of a tenth resistor R10, the end, far away from the pin 7, of the tenth resistor R10 of the second operational amplifier U2-2 is grounded, and the end, far away from the pin 7 of the second operational amplifier U2-2, of the twelfth resistor R12 is connected with a pin PA4 of a central processor U1 of the STM32F103RXT 6.
In one embodiment, the first crystal oscillator circuit is an 8MHz operating frequency circuit composed of a first crystal oscillator X1, a first capacitor C1 and a second capacitor C2, a pin 1 of the first crystal oscillator X1 is connected with a pin PC14 of a central processor U1 of an STM32F103RXT6, and a pin 2 of the first crystal oscillator X1 is connected with a pin PC15 of a central processor U1 of the STM32F103RXT 6.
The second crystal oscillator circuit is an 8MHz working frequency circuit formed by a second crystal oscillator X2, a third capacitor C3 and a fourth capacitor C4, a pin 1 of the second crystal oscillator X2 is connected with a pin PD0 of an STM32F103RXT6 central processor U1, and a pin 2 of the second crystal oscillator X2 is connected with a pin PD1 of an STM32F103RXT6 central processor U1.
The reset circuit comprises a first resistor R1, a fifth capacitor C5 and a manual reset button K1, wherein the manual reset button K1 is connected with the fifth capacitor C5 in parallel and then connected with the first resistor R1 in series, and the middle point of the series connection is connected with a pin 7 of an STM32F103RXT6 central processor U1.
In one embodiment, the digital display circuit comprises a decoder U6 and a nixie tube U4, wherein an STM32F103RXT6 central processor U1 outputs data signals to an 8 pin and a1 pin of the decoder U6 through a 61 pin and a 62 pin thereof, the data signals are decoded by the decoder U6 and then output by a 3 pin, a4 pin, a 5 pin, a 6 pin, a 10 pin, an 11 pin, a 12 pin and a 13 pin of the decoder U6, and then are sent to a 3 pin, a 5 pin, a 10 pin, a2 pin, a4 pin, a 7 pin and a 9 pin of the nixie tube U4 through a nineteenth resistor R19, a twentieth resistor R20, a twenty-first resistor R21, a twenty-second resistor R22, a twenty-third resistor R23, a twenty-fourth resistor R24, a twenty-fifth resistor R25 and a twenty-sixth resistor R26 respectively to be displayed by the nixie tube U4.
The nixie tube U4 is of a two-bit type, a display bit is determined by a bit selection circuit, a bit selection end of the first bit is connected with an 8 pin of an STM32F103RXT6 central processor U1 through a fourth triode Q4, and a bit selection end of the second bit is connected with an 11 pin of an STM32F103RXT6 central processor U1 through a third triode Q3.
In one embodiment, the flame intensity output circuit comprises a third operational amplifier U3, a first triode Q1, a thirteenth resistor R13 and a fourteenth resistor R14, a flame intensity signal is output to the + end of the third operational amplifier U3 through a pin 21 of an STM32F103RXT6 central processor U1, a voltage drop is formed on the fourteenth resistor R14 by current in a load, and a signal of 4-20 mA can be obtained between a collector of the first triode Q1 and the thirteenth resistor R13.
In one embodiment, the output circuit of the contact switch of the fireless relay comprises a sixteenth resistor R16 and a second relay KA2, one end of the second relay KA2 is connected with a 5V power supply through the sixteenth resistor R16, and the other end of the second relay KA2 is connected with a pin 39 of a central processor U1 of an STM32F103RXT 6.
In one embodiment, the circuit fault diagnosis alarm output circuit comprises a fifteenth resistor R15 and a first relay KA1, wherein one end of the first relay KA1 is connected with a 5V power supply through the fifteenth resistor R15, and the other end of the first relay KA1 is connected with a pin 35 of a central processor U1 of the STM32F103RXT 6.
The invention has the advantages and beneficial effects that:
1. the invention utilizes the flame spectrum characteristic and the flame flicker characteristic, and respectively adopts the purple and infrared probes to detect the flame light on different characteristic wave bands; the detector is designed for monitoring flame of a burner, is suitable for industrial furnaces (including boilers, reaction furnaces, incinerators, heating furnaces and the like) with multiple burners and single burners, and is suitable for detecting flame of natural gas, waste gas, fuel oil, coal and the like.
2. The invention improves the reliability of the flame detector and has wide light spectrum and pulse frequency response range. The invention adopts probes with purple and infrared different wavelengths to respectively collect light signals in different wavelength regions of flame (an ultraviolet detection circuit detects ultraviolet light with the wavelength of 0.19-0.29 mu m in the flame, an infrared detection circuit detects infrared light with the wavelength of 4.20-4.50 mu m in the flame), the ultraviolet light and the infrared light are processed by an internal program of a central processor and compared and controlled with a related background threshold value and a bandwidth prestored value in a memory, and the existence of the flame and the flame intensity can be accurately judged and output under various working conditions.
3. The design of the circuit fault diagnosis alarm output circuit in the detector has a self-diagnosis function, and the circuit fault diagnosis alarm output circuit can be used as a remote alarm signal and can perform detection diagnosis output on main devices of the circuit at regular time.
4. The digital display circuit of the invention displays and outputs the working state of the detector.
5. The invention adopts a flame intensity (4-20 mA) output circuit as a remote signal of the flame intensity.
6. The invention adopts the output circuit of the contact switch of the fire-free relay as a fire or fire-free remote transmission signal.
Drawings
FIG. 1 is a schematic structural diagram of the present invention.
FIG. 2 is a circuit diagram of the CPU circuit of the present invention.
Fig. 3 is a circuit diagram of the ultraviolet detection circuit of the present invention.
Fig. 4 is a circuit diagram of an infrared detection circuit of the present invention.
FIG. 5 is a circuit diagram of a digital display circuit according to the present invention.
FIG. 6 is a circuit diagram of the flame intensity output circuit of the present invention.
Fig. 7 is a circuit diagram of the output circuit of the contact switch of the relay with or without fire according to the present invention.
Fig. 8 is a circuit diagram of the circuit fault diagnosis alarm output circuit of the present invention.
FIG. 9 is a flowchart of the operation of the CPU circuit of the present invention.
Detailed Description
In order to facilitate an understanding of the invention, a full description thereof will be given below with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
Example 1
Referring to fig. 1 to 9, a purple infrared dual-wavelength composite detector includes a central processor unit circuit 1, and an ultraviolet detection circuit 2, an infrared detection circuit 3, a digital display circuit 4, a flame intensity output circuit 5, a contact switch output circuit 6 of a relay with or without fire, and a circuit fault diagnosis alarm output circuit 7, which are respectively connected to the central processor unit circuit 1.
As shown in fig. 2, the central processor unit circuit 1 includes an STM32F103RXT6 central processor U1, and a first crystal oscillator circuit, a second crystal oscillator circuit, and a reset circuit respectively connected to the STM32F103RXT6 central processor U1. (in the figure 2, a first crystal oscillator circuit, a second crystal oscillator circuit, a reset circuit and an STM32F103RXT6 central processor U1 are arranged from left to right in sequence)
The STM32F103RXT6 central processor U1 is a latest generation embedded ARM processor, has the highest working frequency of 72MHz, and provides excellent computing performance and advanced and rapid interrupt system response function; and 2-bit analog/digital converter circuits are embedded, so that the circuit design is simplified.
As shown in FIG. 3, the ultraviolet detection circuit 2 detects ultraviolet light of 0.19 to 0.29 μm. The ultraviolet detection circuit 2 comprises an ultraviolet photosensitive tube J1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, a sixth capacitor C6, a seventh capacitor C7, an eighth capacitor C8, a ninth capacitor C9, a first diode V1, a second diode V2 and a first operational amplifier U2-1.
Specifically, the sixth capacitor C6 and the seventh capacitor C7 are respectively connected to two ends of the second resistor R2. One end of a second resistor R2 is connected with a 300V power supply, the other end of the second resistor R2 is connected with one end of an ultraviolet photosensitive tube J1, the other end of the ultraviolet photosensitive tube J1 is connected with one end of a third resistor R3, a first diode V1, a second diode V2, an eighth capacitor C8 and one end of a fourth resistor R4 respectively, the other end of the third resistor is grounded, the other end of a first diode V1 is connected with a 5V power supply, the other end of a second diode V2 is grounded, the other end of an eighth capacitor C8 is grounded, the other end of a fourth resistor R4 is connected with a pin 3 of a first operational amplifier U2-1, a pin 1 of the first operational amplifier U2-1 is connected with one end of a sixth resistor R6, a seventh resistor R7 and a ninth capacitor C9 respectively, the other end of the ninth capacitor C9 is connected with one end 5 of a fifth resistor R639, a pin 2 of the first operational amplifier U2-1 is connected with the other end of the fifth resistor R7 and the other end of the fifth resistor R7, the first operational amplifier U599 is connected with a pin 599, the end of the sixth resistor R6 far from the 1 pin of the first operational amplifier U2-1 is connected with the PA2 pin of the STM32F103RXT6 central processor U1.
Specifically, a 300V dc voltage is applied to two ends of the uv photodiode J1 through the current-limiting second resistor R2, so that a stable potential field is formed by two plates in the uv photodiode J1, when the uv photodiode J1 receives uv radiation, gas atoms in the uv photodiode J1 are ionized, free electrons are released to flow directionally under the action of the electric field, and the current is proportional to the intensity of the uv radiation. The ultraviolet current signal is changed into a voltage signal through the third resistor R3 and is applied to the pin 3 of the operational amplifier U2-1, and the voltage signal is output through the pin 1 of the U2-1 and then loaded on the pin PA2 of the STM32F103RXT6 central processor U1 through the sixth resistor R6. The sixth capacitor C6, the seventh capacitor C7, the eighth capacitor C8 and the ninth capacitor C9 are filter capacitors for alternating current and direct current, the seventh resistor R7 and the fifth resistor R5 are negative feedback loop resistors of the operational amplifier U2-1, and the first diode V1 and the second diode V2 are clamping diodes.
As shown in FIG. 4, the infrared detection circuit 3 detects 4.20 to 4.50 μm infrared light. The infrared detection circuit 3 comprises an infrared probe J2, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, an eleventh resistor R11, a twelfth resistor R12, a tenth capacitor C10, an eleventh capacitor C11, a twelfth capacitor C12, a thirteenth capacitor C13 and a second operational amplifier U2-2.
Specifically, the infrared probe J2 is respectively connected to a 5V power supply, ground, a seventh resistor R7 and one end of a tenth capacitor C10, the other end of the seventh resistor R7 is grounded, the other end of the tenth capacitor is respectively connected to an eleventh capacitor C11 and an eighth resistor R8, one end of a twelfth capacitor C12 is connected, the other end of the twelfth capacitor C12 is connected with one end of a ninth resistor R9, the other end of the ninth resistor is connected with a pin 5 of a second operational amplifier U2-2, a pin 7 of the second operational amplifier U2-2 is respectively connected with one ends of a twelfth resistor R12, an eleventh resistor R11 and a thirteenth capacitor C13, a pin 6 of the second operational amplifier U2-2 is respectively connected with a pin 6 of an eleventh resistor R11, the other end of a thirteenth capacitor C13 and one end of a tenth resistor R10, the end, far away from the pin 7, of the tenth resistor R10 of the second operational amplifier U2-2 is grounded, and the end, far away from the pin 7 of the second operational amplifier U2-2, of the twelfth resistor R12 is connected with a pin PA4 of a central processor U1 of the STM32F103RXT 6.
Specifically, the infrared detection circuit 3, because the pyroelectric infrared probe has no dependence on wavelength, typically filters out 4.20 to 4.50 μm infrared light through the photosensitive glass in front of the probe, while the flame is fluctuated and burned, and the fluctuation frequency of the flame is between 10HZ and 30HZ, so the detected signal is also alternating. 5V direct current is added between one end of the infrared probe J2 and the ground to form a potential field, an alternating voltage is formed on a seventh resistor R7 after infrared light irradiation output, the alternating voltage is isolated by a tenth capacitor C10 and a twelfth capacitor C12, the alternating voltage is amplified by an operational amplifier U2-2, and the amplified voltage is matched by a twelfth resistor R12 and then is sent to a PA4 pin of an STM32F103RXT6 central processor U1. The eleventh capacitor C11 is a signal feedback capacitor, the eighth resistor R8 is a voltage stabilizing resistor, and the tenth resistor R10, the eleventh resistor R11 and the thirteenth capacitor C13 are negative feedback loops.
As shown in fig. 2, the first crystal oscillator circuit is an 8MHz operating frequency circuit composed of a first crystal oscillator X1, a first capacitor C1 and a second capacitor C2, a pin 1 of the first crystal oscillator X1 is connected to a pin PC14 of a central processor U1 of STM32F103RXT6, and a pin 2 of the first crystal oscillator X1 is connected to a pin PC15 of a central processor U1 of the STM32F103RXT 6.
As shown in fig. 2, the second crystal oscillator circuit is an 8MHz operating frequency circuit composed of a second crystal oscillator X2, a third capacitor C3 and a fourth capacitor C4, a pin 1 of the second crystal oscillator X2 is connected with a pin PD0 of a central processor U1 of an STM32F103RXT6, and a pin 2 of the second crystal oscillator X2 is connected with a pin PD1 of a central processor U1 of the STM32F103RXT 6.
As shown in FIG. 2, the reset circuit comprises a first resistor R1, a fifth capacitor C5 and a manual reset button K1, wherein the manual reset button K1 is connected with the fifth capacitor C5 in parallel and then connected with the first resistor R1 in series, and the middle point of the series connection is connected with the 7 pin of the STM32F103RXT6 central processor U1.
As shown in fig. 5, the digital display circuit 4 includes a decoder U6 and a nixie tube U4. The STM32F103RXT6 central processor U1 outputs data signals to the 8 pin and the 1 pin of the decoder U6 through the 61 pin and the 62 pin thereof, the data signals are decoded by the decoder U6 and then output by the 3 pin, the 4 pin, the 5 pin, the 6 pin, the 10 pin, the 11 pin, the 12 pin and the 13 pin of the decoder U6, and then are respectively sent to the 3 pin, the 5 pin, the 10 pin, the 1 pin, the 2 pin, the 4 pin, the 7 pin and the 9 pin of the nixie tube U4 through the nineteenth resistor R19, the twentieth resistor R20, the twenty-first resistor R21, the twenty-second resistor R22, the twenty-third resistor R23, the twenty-fourth resistor R24, the twenty-fifth resistor R25 and the twenty-sixth resistor R26 to be displayed by the nixie tube U4.
The nixie tube U4 is of a two-bit type, the display bit is determined by a bit selection circuit, the bit selection end of the first bit (namely, the pin 6 of the nixie tube U4) is connected with the pin 8 of the STM32F103RXT6 central processor U1 through a fourth triode Q4, and the bit selection end of the second bit (namely, the pin 8 of the nixie tube U4) is connected with the pin 11 of the STM32F103RXT6 central processor U1 through a third triode Q3. Specifically, the first bit is shown as being determined by an eighteenth resistor R18 and a fourth transistor Q4, the collector of the fourth transistor Q4 being connected to pin 6 of the nixie tube U4, the emitter thereof being grounded, the base thereof being connected to an eighteenth resistor R18, the input of the eighteenth resistor R18 being connected to pin 8 of the STM32F103RXT6 central processor U1. The second bit is shown as being defined by a seventeenth resistor R17 and a third transistor Q3, the collector of the third transistor Q3 being connected to pin 8 of the nixie tube U4, the emitter thereof being grounded, the base thereof being connected to a seventeenth resistor R17, the input of the seventeenth resistor R17 being connected to pin 11 of the STM32F103RXT6 central processor U1.
Referring to fig. 6, the flame intensity output circuit 5 includes a third operational amplifier U3, a first transistor Q1, a thirteenth resistor R13, and a fourteenth resistor R14. The flame intensity signal is output to the + end of a third operational amplifier U3 through a pin 21 of an STM32F103RXT6 central processor U1, the current in the load forms a voltage drop on a fourteenth resistor R14, and a signal of 4-20 mA can be obtained between the collector of the first triode Q1 and a thirteenth resistor R13.
Referring to fig. 7, the fireless relay contact switch output circuit 6 comprises a sixteenth resistor R16 and a second relay KA2, wherein one end of the second relay KA2 is connected with a 5V power supply through the sixteenth resistor R16, and the other end of the second relay KA2 is connected with a pin 39 of a central processor U1 of an STM32F103RXT 6.
As shown in fig. 8, the circuit fault diagnosis alarm output circuit 7 comprises a fifteenth resistor R15 and a first relay KA1, wherein one end of the first relay KA1 is connected with a 5V power supply through the fifteenth resistor R15, and the other end of the first relay KA1 is connected with a pin 35 of a central processor U1 of an STM32F103RXT 6.
Working process and working principle of the invention
The invention adopts probes with purple and infrared different wavelengths to respectively collect light signals in different wavelength regions of flame (the ultraviolet detection circuit 2 detects ultraviolet light with the wavelength of 0.19-0.29 mu m in the flame, and the infrared detection circuit 3 detects infrared light with the wavelength of 4.20-4.50 mu m in the flame), and the light signals are processed by an internal program of a central processor and compared and controlled with a related background threshold value and a bandwidth prestored value in a memory, so that the presence or absence of the flame and the flame intensity can be accurately judged and output under various working conditions. The design of the circuit fault diagnosis alarm output circuit 7 has a self-diagnosis function, and can perform detection diagnosis output on main devices of the circuit at regular time to serve as a remote transmission alarm signal.
Fig. 9 is a schematic diagram of the working flow of the central processor unit circuit.
The invention has the advantages and beneficial effects that:
1. the invention utilizes the flame spectrum characteristic and the flame flicker characteristic, and respectively adopts the purple and infrared probes to detect the flame light on different characteristic wave bands; the detector is designed for monitoring flame of a burner, is suitable for industrial furnaces (including boilers, reaction furnaces, incinerators, heating furnaces and the like) with multiple burners and single burners, and is suitable for detecting flame of natural gas, waste gas, fuel oil, coal and the like.
2. The invention has wide light spectrum and pulse frequency response range. The invention adopts probes with purple and infrared different wavelengths to respectively collect light signals in different wavelength regions of flame (the ultraviolet detection circuit 2 detects ultraviolet light with the wavelength of 0.19-0.29 mu m in the flame, and the infrared detection circuit 3 detects infrared light with the wavelength of 4.20-4.50 mu m in the flame), and the light signals are processed by an internal program of a central processor and compared and controlled with a related background threshold value and a bandwidth prestored value in a memory, so that the presence or absence of the flame and the flame intensity can be accurately judged and output under various working conditions.
3. The circuit fault diagnosis alarm output circuit 7 in the detector of the invention is used as a remote transmission alarm signal, has a self-diagnosis function, and can perform detection diagnosis output on main devices of the circuit at regular time.
4. The digital display circuit 4 of the invention displays and outputs the working state of the detector.
5. The invention adopts a flame intensity (4-20 mA) output circuit 5 as a remote signal of the flame intensity.
6. The invention adopts the output circuit 6 of the contact switch of the fire-free relay as a fire or fire-free remote transmission signal.
The purple infrared fusion probe fusion technology is an effective method for improving the reliability of a flame sensor, namely, signals are collected by utilizing a purple infrared fusion probe and an infrared fusion probe and are comprehensively processed. Each probe is capable of detecting signals of different characteristics, such as rapid or slow flame pulsation, continuous or discontinuous, steady or unsteady. The information sensing principle of the purple infrared fusion sensor is that field energy and a method of multi-aspect information are considered when the human brain is simulated, information of two different sensors is integrated, and the information is processed by applying a certain rule and then is used to obtain a uniform description, so that the reliability and the accuracy of flame detection are improved.
The above-mentioned embodiments only express one embodiment of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (9)

1. A purple infrared dual-wavelength composite detector is characterized by comprising a central processor unit circuit, and an ultraviolet detection circuit, an infrared detection circuit, a digital display circuit, a flame intensity output circuit, a fire relay contact switch output circuit and a circuit fault diagnosis alarm output circuit which are respectively connected with the central processor unit circuit;
the central processor unit circuit comprises an STM32F103RXT6 central processor U1, and a first crystal oscillator circuit, a second crystal oscillator circuit and a reset circuit which are respectively connected with the STM32F103RXT6 central processor U1.
2. The purple-infrared dual-wavelength composite detector according to claim 1, wherein the STM32F103RXT6 central processor U1 is an embedded ARM processor, with maximum 72MHz operating frequency, and 2-bit analog/digital converter circuits embedded.
3. The purple infrared dual-wavelength composite detector as claimed in claim 1, wherein the ultraviolet detection circuit detects ultraviolet light of 0.19-0.29 μm, and the ultraviolet detection circuit comprises an ultraviolet photosensitive tube J1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, a sixth capacitor C6, a seventh capacitor C7, an eighth capacitor C8, a ninth capacitor C9, a first diode V1, a second diode V2 and a first operational amplifier U2-1;
a sixth capacitor C6 and a seventh capacitor C7 are respectively connected to two ends of the second resistor R2, one end of the second resistor R2 is connected to a 300V power supply, the other end of the second resistor R2 is connected to one end of the ultraviolet photosensitive tube J1, the other end of the ultraviolet photosensitive tube J1 is respectively connected to one ends of the third resistor R3, the first diode V1, the second diode V2, the eighth capacitor C8 and the fourth resistor R4, the other end of the third resistor is grounded, the other end of the first diode V1 is connected to a 5V power supply, the other end of the second diode V2 is grounded, the other end of the eighth capacitor C8 is grounded, the other end of the fourth resistor R4 is connected to the 3 pin of the first operational amplifier U2-1, the 1 pin of the first operational amplifier U2-1 is respectively connected to one end of the sixth resistor R6, the seventh resistor R7 and the ninth capacitor C9, the other end of the ninth capacitor C9 is connected to one end of the fifth resistor R6955, the first operational amplifier U82861 is respectively connected to the fifth resistor R8653, the end of the fifth resistor R5 far away from the 2-pin of the first operational amplifier U2-1 is grounded, and the end of the sixth resistor R6 far away from the 1-pin of the first operational amplifier U2-1 is connected with the PA2 pin of the STM32F103RXT6 central processor U1.
4. The purple infrared dual-wavelength composite detector as claimed in claim 1, wherein the infrared detection circuit detects infrared rays of 4.20-4.50 μm, and the infrared detection circuit comprises an infrared probe J2, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, an eleventh resistor R11, a twelfth resistor R12, a tenth capacitor C10, an eleventh capacitor C11, a twelfth capacitor C12, a thirteenth capacitor C13 and a second operational amplifier U2-2;
the infrared probe J2 is respectively connected with a 5V power supply, ground, a seventh resistor R7 and one end of a tenth capacitor C10, the other end of the seventh resistor R7 is grounded, the other end of the tenth capacitor is respectively connected with an eleventh capacitor C11 and an eighth resistor R8, one end of a twelfth capacitor C12 is connected, the other end of the twelfth capacitor C12 is connected with one end of a ninth resistor R9, the other end of the ninth resistor is connected with a pin 5 of a second operational amplifier U2-2, a pin 7 of the second operational amplifier U2-2 is respectively connected with one ends of a twelfth resistor R12, an eleventh resistor R11 and a thirteenth capacitor C13, a pin 6 of the second operational amplifier U2-2 is respectively connected with a pin 6 of an eleventh resistor R11, the other end of a thirteenth capacitor C13 and one end of a tenth resistor R10, the end, far away from the pin 7, of the tenth resistor R10 of the second operational amplifier U2-2 is grounded, and the end, far away from the pin 7 of the second operational amplifier U2-2, of the twelfth resistor R12 is connected with a pin PA4 of a central processor U1 of the STM32F103RXT 6.
5. The purple infrared dual-wavelength composite detector as claimed in claim 1, wherein the first crystal oscillator circuit is an 8MHz working frequency circuit composed of a first crystal oscillator X1, a first capacitor C1 and a second capacitor C2, a pin 1 of the first crystal oscillator X1 is connected with a pin PC14 of a central processor U1 of STM32F103RXT6, and a pin 2 of the first crystal oscillator X1 is connected with a pin PC15 of a central processor U1 of the STM32F103RXT 6;
the second crystal oscillator circuit is an 8MHz working frequency circuit consisting of a second crystal oscillator X2, a third capacitor C3 and a fourth capacitor C4, a pin 1 of the second crystal oscillator X2 is connected with a pin PD0 of an STM32F103RXT6 central processor U1, and a pin 2 of the second crystal oscillator X2 is connected with a pin PD1 of an STM32F103RXT6 central processor U1;
the reset circuit comprises a first resistor R1, a fifth capacitor C5 and a manual reset button K1, wherein the manual reset button K1 is connected with the fifth capacitor C5 in parallel and then connected with the first resistor R1 in series, and the middle point of the series connection is connected with a pin 7 of an STM32F103RXT6 central processor U1.
6. The mauve-infrared dual-wavelength composite detector as claimed in claim 1, wherein the digital display circuit comprises a decoder U6, a nixie tube U4, and an STM32F103RXT6 central processor U1 outputting data signals to 8 pins and 1 pin of the decoder U6 through 61 pins and 62 pins thereof, after being decoded by a decoder U6, then outputting the data signals by 3 pins, 4 pins, 5 pins, 6 pins, 10 pins, 11 pins, 12 pins and 13 pins of a decoder U6, and then respectively sending the data signals to 3 pins, 5 pins, 10 pins, 1 pin, 2 pins, 4 pins, 7 pins and 399 pins of the nixie tube U4 through a nineteenth resistor R19, a twentieth resistor R20, a twenty-first resistor R21, a twenty-second resistor R22, a twenty-third resistor R23, a twenty-fourth resistor R24, a twenty-fifth resistor R25 and a twenty-sixth resistor R26;
the nixie tube U4 is of a two-bit type, a display bit is determined by a bit selection circuit, a bit selection end of the first bit is connected with an 8 pin of an STM32F103RXT6 central processor U1 through a fourth triode Q4, and a bit selection end of the second bit is connected with an 11 pin of an STM32F103RXT6 central processor U1 through a third triode Q3.
7. The purple infrared dual-wavelength composite detector as claimed in claim 1, wherein the flame intensity output circuit comprises a third operational amplifier U3, a first triode Q1, a thirteenth resistor R13 and a fourteenth resistor R14, a flame intensity signal is output to the + terminal of the third operational amplifier U3 through a pin 21 of a STM32F103RXT6 central processor U1, a voltage drop is formed on the fourteenth resistor R14 by a current in the load, and a signal of 4-20 mA can be obtained between a collector electrode of the first triode Q1 and the thirteenth resistor R13.
8. The mauve infrared dual wavelength composite detector as claimed in claim 1, wherein the fireless relay contact switch output circuit includes a sixteenth resistor R16, a second relay KA2, one end of the second relay KA2 is connected to 5V power supply through the sixteenth resistor R16, and the other end of the second relay KA2 is connected to pin 39 of STM32F103RXT6 central processor U1.
9. The purple infrared double-wavelength composite detector as claimed in claim 1, characterized in that the circuit fault diagnosis alarm output circuit comprises a fifteenth resistor R15 and a first relay KA1, one end of the first relay KA1 is connected with a 5V power supply through the fifteenth resistor R15, and the other end of the first relay KA1 is connected with a pin 35 of a STM32F103RXT6 central processor U1.
CN202010274303.8A 2020-04-09 2020-04-09 Purple infrared dual wavelength composite detector Pending CN111289105A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112185056A (en) * 2020-09-03 2021-01-05 西安北方光电科技防务有限公司 High-precision flame detector and flame detection method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112185056A (en) * 2020-09-03 2021-01-05 西安北方光电科技防务有限公司 High-precision flame detector and flame detection method

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