CN111286240A - Ultraviolet radiation prevention film material and ultraviolet radiation prevention film for photoelectronic device and preparation method thereof - Google Patents
Ultraviolet radiation prevention film material and ultraviolet radiation prevention film for photoelectronic device and preparation method thereof Download PDFInfo
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Abstract
The invention discloses an ultraviolet radiation prevention film material and an ultraviolet radiation prevention film for an optoelectronic device and a preparation method thereof. The ultraviolet radiation prevention film material comprises the following components in percentage by mass: 25-45% of ultraviolet radiation resistant agent, 14-16% of porous protective agent and 40-60% of mixed solvent. The ultraviolet radiation prevention film material utilizes the porous structure of the porous protective agent to protect the activity of the ultraviolet radiation prevention agent and increase the specific surface area of the molecular distribution of the ultraviolet radiation prevention agent, so that the film-formed ultraviolet radiation prevention film has excellent ultraviolet radiation prevention performance.
Description
Technical Field
The invention belongs to the technical field of anti-ultraviolet radiation materials, and particularly relates to an anti-ultraviolet radiation film material and an anti-ultraviolet radiation film for optoelectronic devices and a preparation method thereof.
Background
Optoelectronic devices are various functional devices made using the electro-photon conversion effect. Optoelectronic devices are key and core components of optoelectronic technology, are leading-edge research fields of modern optoelectronic technology and microelectronic technology, and are also important components of information technology. The optoelectronic component must withstand the external environment to ensure the reliability of the entire electronic device. The ultraviolet radiation can seriously accelerate the aging process of the equipment, damage internal components, obviously influence the electrical performance, the mechanical performance and the like of the whole equipment, and seriously influence the development process of integration and multiple functions of the whole industry of the electronic equipment. Therefore, the problem of protection against ultraviolet radiation is urgently needed to be solved in the process of designing large-scale integrated circuits and packaging electronic devices.
On one hand, most of the conventional ultraviolet radiation resistant products on the market are based on organic molecules, but the organic molecules of the type have poor adhesive force, low thermal decomposition temperature and low solid content, and are difficult to form a stable and durable ultraviolet radiation resistant film, so that the requirement of the existing products on the ultraviolet radiation resistance is difficult to meet. On the other hand, although based on SiO2Various types of UV-protective films have been used, but the existing SiO2Most of solvents used by the ultraviolet radiation resistant material contain toxic components such as benzene and the like harmful to the environment and human body, do not meet the requirements of the future industry on green, environment-friendly and sustainable preparation of electronic products, and are limited by the preparation process of SiO2The uv radiation protective films are all within a few centimeters thick, which is not suitable for current integrated, portable, and multifunctional electronic or flexible devices. At the same time, SiO2The uniformity of the film is difficult to control in the preparation process, and the condition that the ultraviolet radiation resistant film has dead spots is easy to occur, so that the yield of products is reduced.
Disclosure of Invention
The invention aims to: aiming at the problems of instability, durability and large thickness of an ultraviolet radiation resistant film in the prior art, the invention provides an ultraviolet radiation resistant film material for an optoelectronic device, an ultraviolet radiation resistant film and a preparation method thereof.
The technical scheme adopted by the invention is as follows:
an ultraviolet radiation-proof film material for photoelectronic devices. The ultraviolet radiation prevention film material comprises the following components in percentage by mass:
25 to 45 percent of ultraviolet radiation resistant agent,
14-16% of porous protective agent,
40-60% of a mixed solvent.
In the above technical solution, the ultraviolet radiation preventing agent has excellent ultraviolet radiation resistance, and the porous protective agent has a porous structure, on one hand, the ultraviolet radiation preventing agent is attached to the inner and outer surfaces of the porous structure of the porous protective agent at the same time, so that the possibility that the ultraviolet radiation preventing agent is directly exposed to the extreme environment outside the ultraviolet radiation is greatly reduced, the activity of the ultraviolet radiation preventing agent is effectively protected, and the ultraviolet radiation preventing film material has excellent ultraviolet radiation resistance; on the other hand, the porous protective agent has a larger specific surface area, so that the ultraviolet radiation preventing agent attached to the inner surface and the outer surface of the porous protective agent also has a larger distribution area, and the ultraviolet radiation preventing efficiency of the ultraviolet radiation preventing film material is improved.
The ultraviolet radiation resistant film material comprises the components with the content of 100%, wherein the content of the ultraviolet radiation resistant agent is 25-45%. When the addition amount of the ultraviolet radiation preventing agent is less than 25%, the ultraviolet radiation preventing performance of the ultraviolet radiation preventing film material is reduced, the adhesive force on the substrate is also reduced, a stable film structure is difficult to form, the contact area with the substrate is small, and the service life is short. When the addition amount of the ultraviolet radiation preventing agent is more than 45%, the content of the mixed solvent is reduced, and uniform film formation is not facilitated, so that the yield of products is reduced.
Further, the ultraviolet radiation resistant agent is a mixture of weather-resistant wood oil and glycerin. The weather-resistant wood oil disclosed by the invention is selected from the weather-resistant wood oil with the characteristics of environmental protection and no toxicity, so that the pollution to the environment and the damage to the health of a user are avoided. The addition of the weather-resistant wood oil can increase the permeability and the adhesive force of the ultraviolet radiation resistant agent, so that the ultraviolet radiation resistant film material and the substrate are combined together durably, and the ultraviolet radiation resistant service life is prolonged.
Further, in the ultraviolet radiation resistant agent, the content of the weather-resistant wood oil is 20-40%, and the content of the glycerol is 60-80%.
The content of each component in the ultraviolet radiation prevention film material is 100%, wherein the content of the porous protective agent is 14-16%. When the addition amount of the porous protective agent is less than 14%, the activity of the ultraviolet radiation resistant agent cannot be effectively protected, so that the ultraviolet radiation resistant performance of the ultraviolet radiation resistant film material is reduced. When the addition amount of the porous protective agent is more than 16%, the ultraviolet radiation resistance of the ultraviolet radiation resistant film material is not further increased, but the cost is increased.
Further, the porous protective agent is nano-scale porous SiO2Glycol solution of the particles. The nano-scale porous SiO2The specific surface area of the particles is large, and the activity of the ultraviolet radiation preventing agent attached to the inner surface and the outer surface of the particles can be effectively protected.
Further, the nano-scale porous SiO2The particle diameter of the particles is 20-50nm, and the nano-scale porous SiO in the particle diameter range2The specific surface area of the particles is larger, so that the ultraviolet radiation resistant agent is more favorably attached.
Further, the nano-scale porous SiO2The mass/volume ratio of the particles and the ethylene glycol is 20-60g/mL, such that the nanoporous SiO2The particles have good uniformity in the film preparation process, and the condition of dead spots in the ultraviolet radiation resistant film material is reduced, so that the yield of products is improved.
The content of each component in the ultraviolet radiation prevention film material is 100%, wherein the content of the mixed solvent is 40-60%. When the addition amount of the mixed solvent is less than 40%, uniform film formation and control of film formation thickness are not facilitated; when the addition amount of the mixed solvent is more than 60%, the contents of the ultraviolet radiation preventing agent and the porous protective agent are reduced, and the ultraviolet radiation preventing performance of the ultraviolet radiation preventing film material is reduced.
Further, the mixed solvent is a mixture of ethylene glycol, a polymeric polyelectrolyte type 731 dispersant, silane coupling agents YGO-1204 and 20% aqueous acrylic resin emulsion. The mixed solvent does not contain toxic components such as benzene and the like harmful to the environment and human bodies, and is green and environment-friendly.
Further, in the mixed solvent, the content of the ethylene glycol is 30-40%, the content of the polymeric polyelectrolyte type 731 dispersant is 30-40%, the content of the silane coupling agent YGO-1204 is 10-20%, and the content of the 20% aqueous acrylic resin emulsion is 10-20%.
In addition, the invention also provides an ultraviolet radiation prevention film which can be used for optoelectronic devices. The ultraviolet radiation prevention film is prepared from the ultraviolet radiation prevention film material, and the thickness of the ultraviolet radiation prevention film is not more than 8 mu m.
In addition, the invention also provides a preparation method of the ultraviolet radiation prevention film for the photoelectronic device. The preparation method comprises the following steps:
(1) cleaning the surface of the substrate, drying the substrate by dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment;
(2) preparing the ultraviolet radiation resistant film material according to a ratio, and preparing the ultraviolet radiation resistant film on the surface of the substrate treated in the step (1) by adopting a roller coating method, an LB film method, a drop coating method, a spraying method, a pulling method, an ink-jet printing method or a screen printing method;
(3) and (3) drying the ultraviolet radiation prevention film obtained in the step (2).
The substrate used in the present invention is not particularly limited, and may be a rigid substrate such as glass or sapphire, or a flexible substrate such as a metal foil, polyethylene terephthalate, polymethyl methacrylate, polycarbonate, polyurethane, polyimide, vinyl chloride-vinyl acetate resin, or a polymer film such as polyacrylic acid. The ultraviolet radiation prevention film is combined with a flexible substrate, so that the photoelectronic device has a bendable characteristic and can be used for manufacturing wearable electronic equipment.
Compared with the prior art, the invention has the beneficial effects that:
(1) the ultraviolet radiation prevention film material can prevent the ultraviolet radiation prevention agent from losing activity due to the fact that the ultraviolet radiation prevention agent is directly exposed to external extreme environments such as ultraviolet radiation and the like by utilizing the porous structure of the protective agent;
(2) meanwhile, the ultraviolet radiation resistant film material utilizes the characteristic that the ultraviolet radiation resistant agent can be simultaneously attached to the inner surface and the outer surface of the porous structure of the protective agent after film formation, so that the specific surface area of effective ultraviolet radiation resistance is increased, the distribution range and the number of ultraviolet radiation resistant molecules can be effectively increased, and the ultraviolet radiation resistant efficiency is greatly improved;
(3) the solvent adopted by the ultraviolet radiation prevention film material does not contain toxic components such as benzene and the like harmful to the environment and human body, and meets the requirements of the industry in the future on green, environment-friendly and sustainable preparation of electronic products;
(4) the thickness of the prepared ultraviolet radiation resistant film is micron level, and the film formed on the flexible substrate has the characteristic of bending;
(5) the preparation process provided by the invention is simple, and can be used for preparing micron-level films, so that the magnitude of the thickness of the ultraviolet radiation resistant film material is greatly reduced, and the industrialized market demand can be met.
Drawings
Fig. 1 shows a schematic structural view of an ultraviolet radiation protection film that can be used for an optoelectronic device according to the present invention.
Labeled as: 1-mixed solvent; 2-an anti-ultraviolet radiation agent; 3-a porous protectant; 4-substrate.
Detailed Description
The present invention will be described in more detail below with reference to examples and comparative examples. The present invention is not limited to the following examples.
In the following examples and comparative examples, the polymeric polyelectrolyte type 731 dispersant was obtained from Rohm and Haas, USA; silane coupling agents YGO-1204 were purchased from Harbin chemical research institute; the 20% aqueous acrylic resin emulsion was purchased from Changzhou Guangshu chemical technology Co., Ltd; weatherable wood oil was purchased from cherex chemical limited, shanghai.
Example 1
The ultraviolet radiation resistant film material for the photoelectronic device comprises the following components:
60 percent of mixed solvent,
25 percent of ultraviolet radiation resistant agent,
15 percent of porous protective agent,
wherein the mixed solvent is a mixture of 35% of glycol, 35% of polyelectrolyte type 731 dispersant, 15% of silane coupling agent YGO-1204 and 15% of 20% of water-based acrylic resin emulsion, the ultraviolet radiation preventing agent is a mixture of 30% of weather-resistant wood oil solution and 70% of glycerol, and the porous protective agent is nano-scale porous SiO with glycol as solvent2Granular, nano-scale porous SiO2The mass/volume ratio of the particles to the glycol is 40g/mL, and the nano-scale porous SiO is2The particle size of the particles is 20-50 nm.
The preparation method of the ultraviolet radiation resistant film for the photoelectronic device comprises the following steps:
(1) firstly, cleaning a photoelectronic device or a surface substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the photoelectronic device or the surface substrate has good adhesiveness with a film;
(2) spraying the ultraviolet radiation prevention film raw material mixed solution with the concentration of 2mg/mL on the surface of the substrate treated in the step (1) by adopting a spraying method, wherein the spraying speed is 525 mu L/min;
(3) and (3) drying the film obtained in the step (2) at 80 ℃ for 5min to obtain the ultraviolet radiation resistant film for the optoelectronic device, wherein the thickness of the ultraviolet radiation resistant film is 8 microns.
Example 2
The ultraviolet radiation resistant film material for the photoelectronic device comprises the following components:
57 percent of mixed solvent,
28 percent of ultraviolet radiation resistant agent,
15 percent of porous protective agent,
wherein the mixed solvent is a mixture of 35% of glycol, 35% of polyelectrolyte type 731 dispersant, 15% of silane coupling agent YGO-1204 and 15% of 20% of water-based acrylic resin emulsion, the ultraviolet radiation preventing agent is a mixture of 30% of weather-resistant wood oil solution and 70% of glycerol, and the porous protective agent is nano-scale porous SiO with glycol as solvent2Granular, nano-scale porous SiO2The mass/volume ratio of the particles to the glycol is 40g/mL, and the nano-scale porous SiO is2The particle size of the particles is 20-50 nm.
The preparation method of the ultraviolet radiation resistant film for the photoelectronic device comprises the following steps:
(1) firstly, cleaning a photoelectronic device or a surface substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the photoelectronic device or the surface substrate has good adhesiveness with a film;
(2) spraying the ultraviolet radiation prevention film raw material mixed solution with the concentration of 2mg/mL on the surface of the substrate treated in the step (1) by adopting a spraying method, wherein the spraying speed is 525 mu L/min;
(3) and (3) drying the film obtained in the step (2) at 80 ℃ for 5min to obtain the ultraviolet radiation resistant film for the optoelectronic device, wherein the thickness of the ultraviolet radiation resistant film is 8 microns.
Example 3
The ultraviolet radiation resistant film material for the photoelectronic device comprises the following components:
55 percent of mixed solvent,
30 percent of ultraviolet radiation resistant agent,
15 percent of porous protective agent,
wherein the mixed solvent is a mixture of 35% of glycol, 35% of polyelectrolyte type 731 dispersant, 15% of silane coupling agent YGO-1204 and 15% of 20% of water-based acrylic resin emulsion, the ultraviolet radiation preventing agent is a mixture of 30% of weather-resistant wood oil solution and 70% of glycerol, and the porous protective agent is nano-scale porous SiO with glycol as solvent2Granular, nano-scale porous SiO2The mass/volume ratio of the particles to the glycol is 40g/mL, and the nano-scale porous SiO is2The particle size of the particles is 20-50 nm.
The preparation method of the ultraviolet radiation resistant film for the photoelectronic device comprises the following steps:
(1) firstly, cleaning a photoelectronic device or a surface substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the photoelectronic device or the surface substrate has good adhesiveness with a film;
(2) spraying the ultraviolet radiation prevention film raw material mixed solution with the concentration of 2mg/mL on the surface of the substrate treated in the step (1) by adopting a spraying method, wherein the spraying speed is 525 mu L/min;
(3) and (3) drying the film obtained in the step (2) at 80 ℃ for 5min to obtain the ultraviolet radiation resistant film for the optoelectronic device, wherein the thickness of the ultraviolet radiation resistant film is 8 microns.
Example 4
The ultraviolet radiation resistant film material for the photoelectronic device comprises the following components:
53 percent of mixed solvent,
32 percent of ultraviolet radiation resistant agent,
15 percent of porous protective agent,
wherein the mixed solvent is a mixture of 35% of glycol, 35% of polyelectrolyte type 731 dispersant, 15% of silane coupling agent YGO-1204 and 15% of 20% of water-based acrylic resin emulsion, and the ultraviolet radiation resistant agent is 30% of weather-resistant wood oil solutionAnd 70% glycerol, the porous protective agent is nano-scale porous SiO using glycol as solvent2Granular, nano-scale porous SiO2The mass/volume ratio of the particles to the glycol is 40g/mL, and the nano-scale porous SiO is2The particle size of the particles is 20-50 nm.
The preparation method of the ultraviolet radiation resistant film for the photoelectronic device comprises the following steps:
(1) firstly, cleaning a photoelectronic device or a surface substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the photoelectronic device or the surface substrate has good adhesiveness with a film;
(2) spraying the ultraviolet radiation prevention film raw material mixed solution with the concentration of 2mg/mL on the surface of the substrate treated in the step (1) by adopting a spraying method, wherein the spraying speed is 525 mu L/min;
(3) and (3) drying the film obtained in the step (2) at 80 ℃ for 5min to obtain the ultraviolet radiation resistant film for the optoelectronic device.
Example 5
The ultraviolet radiation resistant film material for the photoelectronic device comprises the following components:
50 percent of mixed solvent is used,
35 percent of ultraviolet radiation resistant agent,
15 percent of porous protective agent,
wherein the mixed solvent is a mixture of 35% of glycol, 35% of polyelectrolyte type 731 dispersant, 15% of silane coupling agent YGO-1204 and 15% of 20% of water-based acrylic resin emulsion, the ultraviolet radiation preventing agent is a mixture of 30% of weather-resistant wood oil solution and 70% of glycerol, and the porous protective agent is nano-scale porous SiO with glycol as solvent2Granular, nano-scale porous SiO2The mass/volume ratio of the particles to the glycol is 40g/mL, and the nano-scale porous SiO is2The particle size of the particles is 20-50 nm.
The preparation method of the ultraviolet radiation resistant film for the photoelectronic device comprises the following steps:
(1) firstly, cleaning a photoelectronic device or a surface substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the photoelectronic device or the surface substrate has good adhesiveness with a film;
(2) spraying the ultraviolet radiation prevention film raw material mixed solution with the concentration of 2mg/mL on the surface of the substrate treated in the step (1) by adopting a spraying method, wherein the spraying speed is 525 mu L/min;
(3) drying the film obtained in the step (2) at 80 ℃ for 5min to obtain the ultraviolet radiation resistant film for the optoelectronic device, wherein the thickness of the ultraviolet radiation resistant film is 8 mu m;
example 6
The ultraviolet radiation resistant film material for the photoelectronic device comprises the following components:
47 percent of mixed solvent,
38 percent of ultraviolet radiation resistant agent,
15 percent of porous protective agent,
wherein the mixed solvent is a mixture of 35% of glycol, 35% of polyelectrolyte type 731 dispersant, 15% of silane coupling agent YGO-1204 and 15% of 20% of water-based acrylic resin emulsion, the ultraviolet radiation preventing agent is a mixture of 30% of weather-resistant wood oil solution and 70% of glycerol, and the porous protective agent is nano-scale porous SiO with glycol as solvent2Granular, nano-scale porous SiO2The mass/volume ratio of the particles to the glycol is 40g/mL, and the nano-scale porous SiO is2The particle size of the particles is 20-50 nm.
The preparation method of the ultraviolet radiation resistant film for the photoelectronic device comprises the following steps:
(1) firstly, cleaning a photoelectronic device or a surface substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the photoelectronic device or the surface substrate has good adhesiveness with a film;
(2) spraying the ultraviolet radiation prevention film raw material mixed solution with the concentration of 2mg/mL on the surface of the substrate treated in the step (1) by adopting a spraying method, wherein the spraying speed is 525 mu L/min;
(3) drying the film obtained in the step (2) at 80 ℃ for 5min to obtain the ultraviolet radiation resistant film for the optoelectronic device, wherein the thickness of the ultraviolet radiation resistant film is 8 mu m;
example 7
The ultraviolet radiation resistant film material for the photoelectronic device comprises the following components:
45 percent of mixed solvent,
40 percent of ultraviolet radiation resistant agent,
15 percent of porous protective agent,
wherein the mixed solvent is a mixture of 35% of glycol, 35% of polyelectrolyte type 731 dispersant, 15% of silane coupling agent YGO-1204 and 15% of 20% of water-based acrylic resin emulsion, the ultraviolet radiation preventing agent is a mixture of 30% of weather-resistant wood oil solution and 70% of glycerol, and the porous protective agent is nano-scale porous SiO with glycol as solvent2Granular, nano-scale porous SiO2The mass/volume ratio of the particles to the glycol is 40g/mL, and the nano-scale porous SiO is2The particle size of the particles is 20-50 nm.
The preparation method of the ultraviolet radiation resistant film for the photoelectronic device comprises the following steps:
(1) firstly, cleaning a photoelectronic device or a surface substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the photoelectronic device or the surface substrate has good adhesiveness with a film;
(2) spraying the ultraviolet radiation prevention film raw material mixed solution with the concentration of 2mg/mL on the surface of the substrate treated in the step (1) by adopting a spraying method, wherein the spraying speed is 525 mu L/min;
(3) drying the film obtained in the step (2) at 80 ℃ for 5min to obtain the ultraviolet radiation resistant film for the optoelectronic device, wherein the thickness of the ultraviolet radiation resistant film is 8 mu m;
example 8
The ultraviolet radiation resistant film material for the photoelectronic device comprises the following components:
42 percent of mixed solvent,
43 percent of ultraviolet radiation resistant agent,
15 percent of porous protective agent,
wherein the mixed solvent is a mixture of 35% of glycol, 35% of polyelectrolyte type 731 dispersant, 15% of silane coupling agent YGO-1204 and 15% of 20% of water-based acrylic resin emulsion, the ultraviolet radiation preventing agent is a mixture of 30% of weather-resistant wood oil solution and 70% of glycerol, and the porous protective agent is nano-scale porous SiO with glycol as solvent2Granular, nano-scale porous SiO2The mass/volume ratio of the particles to the glycol is 40g/mL, and the nano-scale porous SiO is2The particle size of the particles is 20-50 nm.
The preparation method of the ultraviolet radiation resistant film for the photoelectronic device comprises the following steps:
(1) firstly, cleaning a photoelectronic device or a surface substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the photoelectronic device or the surface substrate has good adhesiveness with a film;
(2) spraying the ultraviolet radiation prevention film raw material mixed solution with the concentration of 2mg/mL on the surface of the substrate treated in the step (1) by adopting a spraying method, wherein the spraying speed is 525 mu L/min;
(3) and (3) drying the film obtained in the step (2) at 80 ℃ for 5min to obtain the ultraviolet radiation resistant film for the optoelectronic device, wherein the thickness of the ultraviolet radiation resistant film is 8 microns.
Example 9
The ultraviolet radiation resistant film material for the photoelectronic device comprises the following components:
41 percent of mixed solvent,
44 percent of ultraviolet radiation resistant agent,
15 percent of porous protective agent,
wherein the mixed solvent is 35% of glycol, 35% of polyelectrolyte type 731 dispersant, 15% of silane coupling agent YGO-1204 and 15%The ultraviolet radiation preventing agent is a mixture of 30 percent of weather-proof wood oil solution and 70 percent of glycerin, and the porous protective agent is nano-scale porous SiO with glycol as a solvent2Granular, nano-scale porous SiO2The mass/volume ratio of the particles to the glycol is 40g/mL, and the nano-scale porous SiO is2The particle size of the particles is 20-50 nm.
The preparation method of the ultraviolet radiation resistant film for the photoelectronic device comprises the following steps:
(1) firstly, cleaning a photoelectronic device or a surface substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the photoelectronic device or the surface substrate has good adhesiveness with a film;
(2) spraying the ultraviolet radiation prevention film raw material mixed solution with the concentration of 2mg/mL on the surface of the substrate treated in the step (1) by adopting a spraying method, wherein the spraying speed is 525 mu L/min;
(3) drying the film obtained in the step (2) at 80 ℃ for 5min to obtain the ultraviolet radiation resistant film for the optoelectronic device, wherein the thickness of the ultraviolet radiation resistant film is 8 mu m;
example 10
The ultraviolet radiation resistant film material for the photoelectronic device comprises the following components:
40 percent of mixed solvent,
45 percent of ultraviolet radiation resistant agent,
15 percent of porous protective agent,
wherein the mixed solvent is a mixture of 35% of glycol, 35% of polyelectrolyte type 731 dispersant, 15% of silane coupling agent YGO-1204 and 15% of 20% of water-based acrylic resin emulsion, the ultraviolet radiation preventing agent is a mixture of 30% of weather-resistant wood oil solution and 70% of glycerol, and the porous protective agent is nano-scale porous SiO with glycol as solvent2Granular, nano-scale porous SiO2The mass/volume ratio of the particles to the glycol is 40g/mL, and the nano-scale porous SiO is2The particle size of the particles is 20-50 nm.
The preparation method of the ultraviolet radiation resistant film for the photoelectronic device comprises the following steps:
(1) firstly, cleaning a photoelectronic device or a surface substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the photoelectronic device or the surface substrate has good adhesiveness with a film;
(2) spraying the ultraviolet radiation prevention film raw material mixed solution with the concentration of 2mg/mL on the surface of the substrate treated in the step (1) by adopting a spraying method, wherein the spraying speed is 525 mu L/min;
(3) and (3) drying the film obtained in the step (2) at 80 ℃ for 5min to obtain the ultraviolet radiation resistant film for the optoelectronic device, wherein the thickness of the ultraviolet radiation resistant film is 8 microns.
Comparative example 1
The ultraviolet radiation resistant film material for the photoelectronic device comprises the following components:
59 percent of mixed solvent,
22 percent of ultraviolet radiation resistant agent,
19 percent of porous protective agent,
other conditions and film preparation method were the same as example 1.
Comparative example 2
The ultraviolet radiation resistant film material for the photoelectronic device comprises the following components:
39 percent of mixed solvent,
48 percent of ultraviolet radiation resistant agent,
13 percent of porous protective agent,
other conditions and film preparation method were the same as example 1.
Comparative example 3
The surface of the pure optoelectronic device is not provided with the ultraviolet radiation prevention film.
Table 1 shows the uv light absorption (%) of the optoelectronic devices coated with the uv-blocking thin film materials of examples 1 to 10 and comparative examples 1 to 2, and the pure optoelectronic devices of comparative example 3 after different time intervals under the same uv irradiation and temperature conditions.
TABLE 1
| Time (week) | 0 | 1 | 2 | 3 | 4 | 5 |
| Example 1 | 100 | 96 | 89 | 73 | 66 | 65 |
| Example 2 | 100 | 94 | 87 | 69 | 61 | 55 |
| Example 3 | 100 | 93 | 89 | 64 | 55 | 44 |
| Example 4 | 100 | 96 | 85 | 68 | 60 | 53 |
| Example 5 | 100 | 95 | 87 | 69 | 63 | 50 |
| Example 6 | 100 | 98 | 98 | 98 | 97 | 96 |
| Example 7 | 100 | 95 | 83 | 66 | 57 | 47 |
| Example 8 | 100 | 94 | 84 | 64 | 56 | 49 |
| Example 9 | 100 | 96 | 85 | 65 | 57 | 56 |
| Example 10 | 100 | 93 | 84 | 67 | 59 | 45 |
| Comparative example 1 | 100 | 84 | 55 | 21 | 10 | 5 |
| Comparative example 2 | 100 | 88 | 64 | 32 | 15 | 4 |
| Comparative example 3 | 100 | 90 | 72 | 41 | 28 | 6 |
Claims (10)
1. The ultraviolet radiation prevention film material for the optoelectronic device is characterized by comprising the following components in percentage by mass:
25 to 45 percent of ultraviolet radiation resistant agent,
14-16% of porous protective agent,
40-60% of a mixed solvent.
2. The ultraviolet radiation protection film material for optoelectronic devices as claimed in claim 1, wherein the ultraviolet radiation protection agent is a mixture of weather-resistant wood oil and glycerin.
3. The ultraviolet radiation protection film material for optoelectronic devices as claimed in claim 2, wherein the weatherable wood oil is contained in an amount of 20-40% and the glycerin is contained in an amount of 60-80%.
4. The UV-radiation-resistant thin film material for optoelectronic devices as claimed in claim 1, wherein the porous protecting agent is nano-porous SiO2Glycol solution of the particles.
5. The method of claim 4The ultraviolet radiation prevention film material for the photoelectronic device is characterized in that the nano-scale porous SiO2The particle size of the particles is 20-50 nm.
6. The UV-radiation-shielding thin film material for optoelectronic devices according to claim 4 or 5, wherein the nano-porous SiO is2The mass/volume ratio of the particles to said glycol is between 20 and 60 g/mL.
7. The UV-resistant thin film material for optoelectronic devices as claimed in claim 1, wherein the mixed solvent is a mixture of ethylene glycol, polymeric polyelectrolyte type 731 dispersant, silane coupling agent YGO-1204 and 20% aqueous acrylic resin emulsion.
8. The UV-resistant film material for optoelectronic devices as claimed in claim 7, wherein the content of said ethylene glycol is 30-40%, the content of said polymeric polyelectrolyte type 731 dispersant is 30-40%, the content of said silane coupling agent YGO-1204 is 10-20%, and the content of said 20% aqueous acrylic resin emulsion is 10-20%.
9. An ultraviolet radiation prevention film usable for an optoelectronic device, wherein the ultraviolet radiation prevention film is prepared from the ultraviolet radiation prevention film material according to any one of claims 1 to 8, and the thickness of the ultraviolet radiation prevention film is not more than 8 μm.
10. A preparation method of an ultraviolet radiation prevention film for an optoelectronic device is characterized by comprising the following steps:
(1) cleaning the surface of the substrate, drying the substrate by dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment;
(2) preparing the ultraviolet radiation prevention film material of any one of claims 1 to 8 according to a ratio, and preparing the ultraviolet radiation prevention film on the surface of the substrate treated in the step (1) by adopting a roller coating method, an LB film method, a dropping coating method, a spraying method, a pulling method, an ink-jet printing method or a screen printing method;
(3) and (3) drying the ultraviolet radiation prevention film obtained in the step (2).
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102153292A (en) * | 2010-12-27 | 2011-08-17 | 上海师范大学 | High-transmission nano silicon dioxide anti-reflection film and preparation method and application thereof |
| CN102391568A (en) * | 2011-09-29 | 2012-03-28 | 东方电气集团东方汽轮机有限公司 | Ethylene-vinyl acetate copolymer packaging thin film |
| US20140004709A1 (en) * | 2009-07-03 | 2014-01-02 | National Tsing Hua University | Antireflection structures with an exceptional low refractive index and devices containing the same |
| CN103571237A (en) * | 2013-11-01 | 2014-02-12 | 苏州泰科尼光伏材料有限公司 | Coating for EVA (ethylene-vinyl acetate copolymer) film surface of solar packaged cell |
| CN104312375A (en) * | 2014-09-15 | 2015-01-28 | 天长市巨龙车船涂料有限公司 | Wear-resistant scratch-resistant anti-ultraviolet paint for ships and preparation method thereof |
| CN108250576A (en) * | 2018-01-11 | 2018-07-06 | 常州回天新材料有限公司 | The weather-proof polyolefin adhesive film of photovoltaic module superelevation and preparation method |
-
2020
- 2020-03-19 CN CN202010196346.9A patent/CN111286240A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140004709A1 (en) * | 2009-07-03 | 2014-01-02 | National Tsing Hua University | Antireflection structures with an exceptional low refractive index and devices containing the same |
| CN102153292A (en) * | 2010-12-27 | 2011-08-17 | 上海师范大学 | High-transmission nano silicon dioxide anti-reflection film and preparation method and application thereof |
| CN102391568A (en) * | 2011-09-29 | 2012-03-28 | 东方电气集团东方汽轮机有限公司 | Ethylene-vinyl acetate copolymer packaging thin film |
| CN103571237A (en) * | 2013-11-01 | 2014-02-12 | 苏州泰科尼光伏材料有限公司 | Coating for EVA (ethylene-vinyl acetate copolymer) film surface of solar packaged cell |
| CN104312375A (en) * | 2014-09-15 | 2015-01-28 | 天长市巨龙车船涂料有限公司 | Wear-resistant scratch-resistant anti-ultraviolet paint for ships and preparation method thereof |
| CN108250576A (en) * | 2018-01-11 | 2018-07-06 | 常州回天新材料有限公司 | The weather-proof polyolefin adhesive film of photovoltaic module superelevation and preparation method |
Non-Patent Citations (2)
| Title |
|---|
| 徐蕾: "《负载型多酸光催化材料及应用》", 31 March 2015, 东北师范大学出版社 * |
| 陆启玉等著: "《方便面生产技术》", 31 December 1994, 中原农民出版社 * |
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