CN111490017A - Moisture-proof structure for optoelectronic device and preparation method thereof - Google Patents
Moisture-proof structure for optoelectronic device and preparation method thereof Download PDFInfo
- Publication number
- CN111490017A CN111490017A CN202010301019.5A CN202010301019A CN111490017A CN 111490017 A CN111490017 A CN 111490017A CN 202010301019 A CN202010301019 A CN 202010301019A CN 111490017 A CN111490017 A CN 111490017A
- Authority
- CN
- China
- Prior art keywords
- moisture
- proof
- film
- substrate
- agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 37
- 239000003223 protective agent Substances 0.000 claims abstract description 33
- 239000002994 raw material Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 106
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 48
- 238000005507 spraying Methods 0.000 claims description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 31
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 28
- 239000012046 mixed solvent Substances 0.000 claims description 27
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 24
- 238000001035 drying Methods 0.000 claims description 24
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 23
- 238000004140 cleaning Methods 0.000 claims description 22
- 239000011259 mixed solution Substances 0.000 claims description 22
- 239000002904 solvent Substances 0.000 claims description 19
- 235000012239 silicon dioxide Nutrition 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 240000002853 Nelumbo nucifera Species 0.000 claims description 14
- 235000006508 Nelumbo nucifera Nutrition 0.000 claims description 14
- 235000006510 Nelumbo pentapetala Nutrition 0.000 claims description 14
- 235000011187 glycerol Nutrition 0.000 claims description 14
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 13
- 239000002270 dispersing agent Substances 0.000 claims description 13
- 239000000839 emulsion Substances 0.000 claims description 13
- 229920000867 polyelectrolyte Polymers 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 238000001548 drop coating Methods 0.000 claims description 12
- 238000007641 inkjet printing Methods 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 238000007650 screen-printing Methods 0.000 claims description 12
- 238000007761 roller coating Methods 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 3
- 229920002125 Sokalan® Polymers 0.000 claims description 3
- HGAZMNJKRQFZKS-UHFFFAOYSA-N chloroethene;ethenyl acetate Chemical compound ClC=C.CC(=O)OC=C HGAZMNJKRQFZKS-UHFFFAOYSA-N 0.000 claims description 3
- 239000011888 foil Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 3
- -1 polyethylene terephthalate Polymers 0.000 claims description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 4
- 230000005855 radiation Effects 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract description 3
- 239000002131 composite material Substances 0.000 abstract 1
- 238000005536 corrosion prevention Methods 0.000 abstract 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 20
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 20
- 238000000576 coating method Methods 0.000 description 11
- 239000008367 deionised water Substances 0.000 description 10
- 229910021641 deionized water Inorganic materials 0.000 description 10
- 239000003599 detergent Substances 0.000 description 10
- 238000003618 dip coating Methods 0.000 description 10
- 125000003827 glycol group Chemical group 0.000 description 10
- 239000008187 granular material Substances 0.000 description 10
- 238000001338 self-assembly Methods 0.000 description 10
- 238000004528 spin coating Methods 0.000 description 10
- 238000010345 tape casting Methods 0.000 description 10
- 238000004506 ultrasonic cleaning Methods 0.000 description 10
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- 230000007613 environmental effect Effects 0.000 description 5
- 230000006378 damage Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000036541 health Effects 0.000 description 2
- 239000004584 polyacrylic acid Substances 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
Abstract
The invention discloses a moisture-proof structure for an optoelectronic device and a preparation method thereof, relating to the technical field of moisture-proof materials, the moisture-proof structure comprises a substrate and a moisture-proof film which are arranged from bottom to top, the total thickness of the moisture-proof film is not more than 10 mu m, and the raw materials of the moisture-proof film comprise the following components in percentage by weight: the moisture-proof and corrosion-resistant composite material is used for moisture protection and corrosion prevention of optoelectronic devices, and has the advantages that the porous structure of the protective agent can prevent the moisture-proof agent from being directly exposed to external extreme environments such as ultraviolet radiation and the like to cause the moisture-proof agent to lose activity, meanwhile, the characteristic that the moisture-proof agent can be simultaneously attached to the inner surface and the outer surface of the porous structure of the protective agent after being dried is utilized, the effective moisture-proof specific surface area is increased, and the moisture-proof effect is greatly improved.
Description
Technical Field
The invention relates to the technical field of moisture-proof materials, in particular to a moisture-proof structure for an optoelectronic device and a preparation method thereof.
Background
With the increasing requirements of the human society on production efficiency, the requirements on the aspects of light weight, convenience in carrying, flexibility, transparency and integration degree integration of electronic equipment are higher and higher. With the increasing development degree of light weight, portability, multifunction and the like of electronic products, materials, parts and components used by electronic equipment can generate environmental effects under various environmental conditions, so that the reliability of the equipment is reduced, and the service life of the equipment is prolonged. Particularly, with the high integration, high-density assembly and micro-electronics degree of electronic equipment and the amplification characteristic of electronic circuits, metal is slightly corroded, the influence on the electrical performance, the mechanical performance and the like of the whole equipment is more obvious and fatal, the development process of the whole industry of the electronic equipment is seriously influenced, and one of the most obvious factors influencing the corrosion degree of the metal is the humidity of the ambient environment. Therefore, the issue of moisture protection is urgently needed to be solved in the process of designing large-scale integrated circuits and packaging electronic devices.
Most common traditional moisture-proof products in the market at present are based on common organic molecules, but the organic moisture-proof molecules of the type have poor adhesive force, low thermal decomposition temperature and low solid content, and are difficult to form a stable and durable moisture-proof film, so that the requirements of the existing products on moisture-proof performance are difficult to meet, and in addition, the organic molecules are sensitive to ultraviolet radiation, and are unstable in structure under exposure to ultraviolet radiation, so that the moisture-proof service life is short. Meanwhile, as the great advantages of the porous silicon dioxide (SiO2) in terms of structure and waterproofness are beginning to be widely applied to the moisture-proof industry, the moisture-proof film made of various types of SiO2 materials which are used at present also improves the moisture resistance of electronic products to a certain extent. However, most solvents used by the existing SiO2 moisture-proof material are benzene-containing, so that the solvent has great harm to the environment and human health after volatilization, the requirements of the future industry on green, environment-friendly and sustainable preparation of electronic products are not met, the thickness of the SiO2 moisture-proof film is within several centimeters due to the limitation of the size of the material and the limitation of the preparation process of the SiO2 moisture-proof material film, and the thickness is unacceptable for the current integrated, portable and multifunctional electronic equipment or flexible equipment. Meanwhile, the SiO2 film is easily dispersed unevenly during the preparation process, which easily causes the occurrence of defect spots in the moisture-proof film, and it is necessary to spend a large amount of cost to solve the problem, which not only increases the cost of the electronic product, but also reduces the yield and efficiency of the product. The problems seriously restrict the application and popularization of the SiO2 moisture-proof material film in the industrialization of optoelectronic products.
Disclosure of Invention
The invention aims to: in order to solve the technical problems that most solvents used by the conventional SiO2 moisture-proof material contain benzene and SiO2 film is easy to disperse unevenly in the preparation process, so that the situation that dead spots exist in the moisture-proof film is easy to occur, the invention provides a moisture-proof structure for an optoelectronic device and a preparation method thereof.
The invention specifically adopts the following technical scheme for realizing the purpose:
a moisture-proof structure usable in an optoelectronic device, comprising a substrate and a moisture-proof film provided on the substrate, the moisture-proof film having a total thickness of not more than 10 μm, the moisture-proof film being made of a material comprising the following components in parts by weight: 60-40% of mixed solvent, 20-30% of moisture-proof agent and 20-30% of protective agent.
The mixed solvent comprises glycol, a polymeric polyelectrolyte type 731 dispersant, silane coupling agents YGO-1204 and an aqueous emulsion.
The moisture-proof agent is a lotus extract liquid and glycerin mixed liquid with a stable film structure.
The protective agent is nano-scale porous SiO2 particles using ethylene glycol as a solvent.
The substrate is a rigid substrate or a flexible substrate, the rigid substrate is glass or sapphire, and the flexible substrate is one of polymer films such as metal foil, polyethylene terephthalate, polymethyl methacrylate, polycarbonate, polyurethane, polyimide, vinyl chloride-vinyl acetate resin or polyacrylic acid.
A method for preparing a moisture-proof structure for an optoelectronic device is characterized by comprising the following steps: the method comprises the following steps:
step 1, cleaning an optoelectronic device or a surface substrate to be sprayed, drying the cleaned optoelectronic device by dry nitrogen, and then performing oxygen plasma bombardment treatment to ensure good adhesion with a film;
and 3, drying the film obtained in the step 2 to obtain the moisture-proof structure film for the optoelectronic device.
The invention has the following beneficial effects:
1. the invention utilizes the porous structure of the protective agent to avoid the loss of activity of the moisture-proof agent caused by the fact that the moisture-proof agent is directly exposed to external extreme environments such as ultraviolet irradiation and the like, and simultaneously utilizes the characteristic that the moisture-proof agent can be simultaneously attached to the inner surface and the outer surface of the porous structure of the protective agent after being dried, thereby increasing the effective moisture-proof specific surface area and greatly improving the moisture-proof effect; the preparation process is simple, and the micron-level film can be prepared, so that the magnitude of the thickness of the moisture-proof film is greatly reduced, and the market demand of industrialization can be met.
2. The nano-scale porous SiO2 added with glycol as the solvent has a porous structure, the solvent is green and environment-friendly, the film is flexible, and the porous structure can be used for increasing the effective specific surface area after the nano-scale porous SiO2 is mixed with the heat dissipating agent, sprayed and dried, so that the distribution range and the number of moisture-proof molecules can be effectively increased, and the moisture-proof efficiency is improved;
3. the selected protective agent nano-scale porous SiO2 has a three-dimensional porous structure and high heat resistance, can effectively prevent the damage of ultraviolet radiation and external high-temperature environment to the internal moisture-proof agent, and prolongs the service life of the moisture-proof agent;
4. the heat dissipating agent distributed among the protective agents is natural lotus extract dissolved in glycerin, has the characteristics of environmental protection and no toxicity, does not need to use benzene-containing or toxic solvents, and avoids the pollution to the environment and the damage to the health of users.
Drawings
FIG. 1 is a schematic view of a moisture barrier construction that may be used in an optoelectronic device;
reference numerals: 1-substrate, 2-moisture-proof film, a-mixed solvent, b-protective agent and c-moisture-proof agent.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention.
A moisture-proof structure usable in an optoelectronic device, comprising a substrate and a moisture-proof film provided on the substrate, the moisture-proof film having a total thickness of not more than 10 μm, the moisture-proof film being made of a material comprising the following components in parts by weight: 60-40% of mixed solvent, 20-30% of moisture-proof agent and 20-30% of protective agent.
The mixed solvent comprises glycol, a polymeric polyelectrolyte type 731 dispersant, silane coupling agents YGO-1204 and an aqueous emulsion.
The moisture-proof agent is a lotus extract liquid and glycerin mixed liquid with a stable film structure.
The protective agent is nano-scale porous SiO2 particles using ethylene glycol as a solvent.
The substrate is a rigid substrate or a flexible substrate, the rigid substrate is glass or sapphire, and the flexible substrate is one of polymer films such as metal foil, polyethylene terephthalate, polymethyl methacrylate, polycarbonate, polyurethane, polyimide, vinyl chloride-vinyl acetate resin or polyacrylic acid.
Example 1
As shown in fig. 1, a moisture-proof structure for optoelectronic devices comprises a substrate 1 and a moisture-proof film 2 arranged from bottom to top, wherein the total thickness of the moisture-proof film is 10 μm, and the moisture-proof film comprises the following raw materials in percentage by weight: 60% of mixed solvent, 20% of moisture-proof agent and 20% of protective agent;
the mixed solvent is glycol, polyelectrolyte type 731 dispersant, silane coupling agent YGO-1204 and water-based emulsion, and the moisture-proof agent is L B adopting roller coatingThe lotus extract and glycerin mixed solution has a stable film structure after being treated by any one of a film method, a blade coating method, a spin coating method, a drop coating method, a spray coating method, a pulling method, a tape casting method, a dip coating method, an ink-jet printing method, a self-assembly method or a screen printing method, and has large contact area and green environmental protection characteristics, and the protective agent is nano-scale porous SiO liquid using ethylene glycol as a solvent2And (3) granules.
The preparation method comprises the following steps:
step 1, cleaning a photoelectronic device or a surface substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the photoelectronic device or the surface substrate has good adhesiveness with a film;
and 4, carrying out moisture resistance test on the film obtained in the step 3.
Example 2
As shown in fig. 1, a moisture-proof structure for optoelectronic devices comprises a substrate 4 and a moisture-proof film arranged from bottom to top, wherein the total thickness of the moisture-proof film is 10 μm, and the moisture-proof film comprises the following raw materials in percentage by weight: 50% of mixed solvent, 20% of moisture-proof agent and 30% of protective agent;
the mixed solvent is glycol, a macromolecular polyelectrolyte type 731 dispersant, a silane coupling agent YGO-1204 and a water-based emulsion, the moisture-proof agent is a lotus extract and glycerin mixed solution which has a stable film structure and large contact area and green and environment-friendly characteristics and is processed by any one of a roller coating method, a L B film method, a blade coating method, a spin coating method, a drop coating method, a spray coating method, a pulling method, a tape casting method, a dip coating method, an ink-jet printing method, a self-assembly method or a screen printing method, and the protective agent is nano-scale porous SiO using the glycol as the solvent2And (3) granules.
The preparation method comprises the following steps:
step 1, cleaning a photoelectronic device or a surface substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the photoelectronic device or the surface substrate has good adhesiveness with a film;
and 4, carrying out moisture resistance test on the film obtained in the step 3.
Example 3
As shown in fig. 1, a moisture-proof structure for optoelectronic devices comprises a substrate 4 and a moisture-proof film arranged from bottom to top, wherein the total thickness of the moisture-proof film is 10 μm, and the moisture-proof film comprises the following raw materials in percentage by weight: 50% of mixed solvent, 30% of moisture-proof agent and 20% of protective agent;
the mixed solvent is glycol, a macromolecular polyelectrolyte type 731 dispersant, a silane coupling agent YGO-1204 and a water-based emulsion, the moisture-proof agent is a lotus extract and glycerin mixed solution which has a stable film structure and large contact area and green and environment-friendly characteristics and is processed by any one of a roller coating method, a L B film method, a blade coating method, a spin coating method, a drop coating method, a spray coating method, a pulling method, a tape casting method, a dip coating method, an ink-jet printing method, a self-assembly method or a screen printing method, and the protective agent is nano-scale porous SiO using the glycol as the solvent2And (3) granules.
The preparation method comprises the following steps:
step 1, cleaning a photoelectronic device or a surface substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the photoelectronic device or the surface substrate has good adhesiveness with a film;
and 4, carrying out moisture resistance test on the film obtained in the step 3.
Example 4
As shown in fig. 1, a moisture-proof structure for optoelectronic devices comprises a substrate 4 and a moisture-proof film arranged from bottom to top, wherein the total thickness of the moisture-proof film is 10 μm, and the moisture-proof film comprises the following raw materials in percentage by weight: 50% of mixed solvent, 26% of moisture-proof agent and 24% of protective agent;
the mixed solvent is glycol, a macromolecular polyelectrolyte type 731 dispersant, a silane coupling agent YGO-1204 and a water-based emulsion, the moisture-proof agent is a lotus extract and glycerin mixed solution which has a stable film structure and large contact area and green and environment-friendly characteristics and is processed by any one of a roller coating method, a L B film method, a blade coating method, a spin coating method, a drop coating method, a spray coating method, a pulling method, a tape casting method, a dip coating method, an ink-jet printing method, a self-assembly method or a screen printing method, and the protective agent is nano-scale porous SiO using the glycol as the solvent2And (3) granules.
The preparation method comprises the following steps:
step 1, cleaning a photoelectronic device or a surface substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the photoelectronic device or the surface substrate has good adhesiveness with a film;
and 4, carrying out moisture resistance test on the film obtained in the step 3.
Example 5
As shown in fig. 1, a moisture-proof structure for optoelectronic devices comprises a substrate 4 and a moisture-proof film arranged from bottom to top, wherein the total thickness of the moisture-proof film is 10 μm, and the moisture-proof film comprises the following raw materials in percentage by weight: 50% of mixed solvent, 22% of moisture-proof agent and 28% of protective agent;
the mixed solvent is glycol, a macromolecular polyelectrolyte type 731 dispersant, a silane coupling agent YGO-1204 and a water-based emulsion, the moisture-proof agent is a lotus extract and glycerin mixed solution which has a stable film structure and large contact area and green and environment-friendly characteristics and is processed by any one of a roller coating method, a L B film method, a blade coating method, a spin coating method, a drop coating method, a spray coating method, a pulling method, a tape casting method, a dip coating method, an ink-jet printing method, a self-assembly method or a screen printing method, and the protective agent is nano-scale porous SiO using the glycol as the solvent2And (3) granules.
The preparation method comprises the following steps:
step 1, cleaning a photoelectronic device or a surface substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the photoelectronic device or the surface substrate has good adhesiveness with a film;
and 4, carrying out moisture resistance test on the film obtained in the step 3.
Example 6
As shown in fig. 1, a moisture-proof structure for optoelectronic devices comprises a substrate 4 and a moisture-proof film arranged from bottom to top, wherein the total thickness of the moisture-proof film is 10 μm, and the moisture-proof film comprises the following raw materials in percentage by weight: 50% of mixed solvent, 36% of moisture-proof agent and 24% of protective agent;
the mixed solvent is glycol, a polymeric polyelectrolyte type 731 dispersant, a silane coupling agent YGO-1204 and a water-based emulsion, and the moisture-proof agent is prepared by adopting a roll coating method, a L B film method, a blade coating method, a spin coating method, a drop coating method, a spray coating method, a pulling method, a tape casting method, a dip coating method, an ink-jet printing method, a self-assembly method or a silk-screen printing methodThe lotus extract and glycerin mixed solution which is treated by any one method and has stable film structure, larger contact area and green environmental protection characteristic is brushed, and the protective agent is nano-scale porous SiO with glycol as solvent2And (3) granules.
The preparation method comprises the following steps:
step 1, cleaning a photoelectronic device or a surface substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the photoelectronic device or the surface substrate has good adhesiveness with a film;
and 4, carrying out moisture resistance test on the film obtained in the step 3.
Example 7
As shown in fig. 1, a moisture-proof structure for optoelectronic devices comprises a substrate 4 and a moisture-proof film arranged from bottom to top, wherein the total thickness of the moisture-proof film is 10 μm, and the moisture-proof film comprises the following raw materials in percentage by weight: 50% of mixed solvent, 22% of moisture-proof agent and 38% of protective agent;
the mixed solvent is glycol, a macromolecular polyelectrolyte type 731 dispersant, a silane coupling agent YGO-1204 and a water-based emulsion, the moisture-proof agent is a lotus extract and glycerin mixed solution which has a stable film structure and large contact area and green and environment-friendly characteristics and is processed by any one of a roller coating method, a L B film method, a blade coating method, a spin coating method, a drop coating method, a spray coating method, a pulling method, a tape casting method, a dip coating method, an ink-jet printing method, a self-assembly method or a screen printing method, and the protective agent is nano-scale porous SiO using the glycol as the solvent2And (3) granules.
The preparation method comprises the following steps:
step 1, cleaning a photoelectronic device or a surface substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the photoelectronic device or the surface substrate has good adhesiveness with a film;
and 4, carrying out moisture resistance test on the film obtained in the step 3.
Example 8
As shown in fig. 1, a moisture-proof structure for optoelectronic devices comprises a substrate 4 and a moisture-proof film arranged from bottom to top, wherein the total thickness of the moisture-proof film is 10 μm, and the moisture-proof film comprises the following raw materials in percentage by weight: 50% of mixed solvent, 32% of moisture-proof agent and 28% of protective agent;
the mixed solvent is glycol, a macromolecular polyelectrolyte type 731 dispersant, a silane coupling agent YGO-1204 and a water-based emulsion, the moisture-proof agent is a lotus extract and glycerin mixed solution which has a stable film structure and large contact area and green and environment-friendly characteristics and is processed by any one of a roller coating method, a L B film method, a blade coating method, a spin coating method, a drop coating method, a spray coating method, a pulling method, a tape casting method, a dip coating method, an ink-jet printing method, a self-assembly method or a screen printing method, and the protective agent is nano-scale porous SiO using the glycol as the solvent2And (3) granules.
The preparation method comprises the following steps:
step 1, cleaning a photoelectronic device or a surface substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the photoelectronic device or the surface substrate has good adhesiveness with a film;
and 4, carrying out moisture resistance test on the film obtained in the step 3.
Example 9
As shown in fig. 1, a moisture-proof structure for optoelectronic devices comprises a substrate 4 and a moisture-proof film arranged from bottom to top, wherein the total thickness of the moisture-proof film is 10 μm, and the moisture-proof film comprises the following raw materials in percentage by weight: 50% of mixed solvent, 25% of moisture-proof agent and 25% of protective agent;
the mixed solvent is glycol, a macromolecular polyelectrolyte type 731 dispersant, a silane coupling agent YGO-1204 and a water-based emulsion, the moisture-proof agent is a lotus extract and glycerin mixed solution which has a stable film structure and large contact area and green and environment-friendly characteristics and is processed by any one of a roller coating method, a L B film method, a blade coating method, a spin coating method, a drop coating method, a spray coating method, a pulling method, a tape casting method, a dip coating method, an ink-jet printing method, a self-assembly method or a screen printing method, and the protective agent is nano-scale porous SiO using the glycol as the solvent2And (3) granules.
The preparation method comprises the following steps:
step 1, cleaning a photoelectronic device or a surface substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the photoelectronic device or the surface substrate has good adhesiveness with a film;
and 4, carrying out moisture resistance test on the film obtained in the step 3.
Example 10
As shown in fig. 1, a moisture-proof structure for optoelectronic devices comprises a substrate 4 and a moisture-proof film arranged from bottom to top, wherein the total thickness of the moisture-proof film is 10 μm, and the moisture-proof film comprises the following raw materials in percentage by weight: 40% of mixed solvent, 30% of moisture-proof agent and 30% of protective agent;
the mixed solvent is glycol, a macromolecular polyelectrolyte type 731 dispersant, a silane coupling agent YGO-1204 and a water-based emulsion, the moisture-proof agent is a lotus extract and glycerin mixed solution which has a stable film structure and large contact area and green and environment-friendly characteristics and is processed by any one of a roller coating method, a L B film method, a blade coating method, a spin coating method, a drop coating method, a spray coating method, a pulling method, a tape casting method, a dip coating method, an ink-jet printing method, a self-assembly method or a screen printing method, and the protective agent is nano-scale porous SiO using the glycol as the solvent2And (3) granules.
The preparation method comprises the following steps:
step 1, cleaning a photoelectronic device or a surface substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the photoelectronic device or the surface substrate has good adhesiveness with a film;
and 4, carrying out moisture resistance test on the film obtained in the step 3.
Table 1 shows the comparison of the corrosion degree (%) of the pure optoelectronic device and the optoelectronic device coated with the moisture-proof film of examples 1-10 under the same initial humidity and temperature conditions at different time intervals.
TABLE 1
Claims (6)
1. A moisture barrier structure useful in optoelectronic devices, comprising: the moisture-proof film comprises a substrate and a moisture-proof film, wherein the substrate and the moisture-proof film are arranged from bottom to top, the total thickness of the moisture-proof film is not more than 10 mu m, and raw materials of the moisture-proof film comprise the following components in percentage by weight: 60-40% of mixed solvent, 20-30% of moisture-proof agent and 20-30% of protective agent.
2. The moisture barrier structure useful in optoelectronic devices of claim 1, wherein: the mixed solvent comprises glycol, a polymeric polyelectrolyte type 731 dispersant, silane coupling agents YGO-1204 and an aqueous emulsion.
3. The moisture barrier structure useful in optoelectronic devices of claim 1, wherein: the moisture-proof agent is a lotus extract liquid and glycerin mixed liquid with a stable film structure.
4. The moisture barrier structure useful in optoelectronic devices of claim 1, wherein: the protective agent is nano-scale porous SiO2 particles using ethylene glycol as a solvent.
5. The moisture barrier structure useful in optoelectronic devices of claim 1, wherein: the substrate is a rigid substrate or a flexible substrate, the rigid substrate is glass or sapphire, and the flexible substrate is one of metal foil, polyethylene terephthalate, polymethyl methacrylate, polycarbonate, polyurethane, polyimide, vinyl chloride-vinyl acetate resin or polyacrylic acid polymer film.
6. A method for preparing a moisture-proof structure for an optoelectronic device is characterized by comprising the following steps: the method comprises the following steps:
step 1, cleaning an optoelectronic device or a surface substrate to be sprayed, drying the cleaned optoelectronic device by dry nitrogen, and then performing oxygen plasma bombardment treatment to ensure good adhesion with a film;
step 2, preparing a raw material mixed solution of the moisture-proof film on the surface of the substrate treated in the step 1 by adopting any one of a roller coating method, an L B film method, a drop coating method, a spraying method, a pulling method, an ink-jet printing method or a screen printing method;
and 3, drying the film obtained in the step 2 to obtain the moisture-proof structure film for the optoelectronic device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010301019.5A CN111490017A (en) | 2020-04-16 | 2020-04-16 | Moisture-proof structure for optoelectronic device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010301019.5A CN111490017A (en) | 2020-04-16 | 2020-04-16 | Moisture-proof structure for optoelectronic device and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111490017A true CN111490017A (en) | 2020-08-04 |
Family
ID=71798447
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010301019.5A Pending CN111490017A (en) | 2020-04-16 | 2020-04-16 | Moisture-proof structure for optoelectronic device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111490017A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112509984A (en) * | 2020-12-14 | 2021-03-16 | 电子科技大学 | Moisture-proof structure for optoelectronic device and preparation method thereof |
| CN112509985A (en) * | 2020-12-14 | 2021-03-16 | 电子科技大学 | Moisture-proof structure for optoelectronic device and preparation method thereof |
| CN112599422A (en) * | 2020-12-14 | 2021-04-02 | 电子科技大学 | High heat-resistant structure for heat dissipation of photoelectronic device and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010009160A1 (en) * | 1998-12-07 | 2001-07-26 | Bridgestone Corporation | Covering member for solar battery, sealing film and solar battery |
| US20070202362A1 (en) * | 2006-01-20 | 2007-08-30 | Neto Jarbas C D | Process of making a nanostructured thin film, self-cleaning nanostructured thin film and method to apply said film on lens surfaces and optical devices |
| CN101344601A (en) * | 2008-08-27 | 2009-01-14 | 吉林大学 | Method for preparing anti-fog anti-reflection coating layer based on layered packaging technique |
| CN102849962A (en) * | 2011-06-29 | 2013-01-02 | 比亚迪股份有限公司 | Preparation method of SiO2 super-hydrophobic film and super-hydrophobic material |
| CN105336873A (en) * | 2015-11-05 | 2016-02-17 | 南京济民信息技术有限公司 | Substrate for flexible photoelectronic device, and preparation method thereof |
| CN105399340A (en) * | 2015-12-14 | 2016-03-16 | 上海电力学院 | Super-hydrophobic high-transmittance SiO2 anti-reflecting thin film and preparation method thereof |
| CN105657303A (en) * | 2016-01-26 | 2016-06-08 | 电子科技大学 | Strong heat dissipation structure used for heat dissipation of laser television and preparation method thereof |
| CN110436795A (en) * | 2019-08-28 | 2019-11-12 | 福建工程学院 | A method of preparing the silica membrane of the structure of shape containing Egg Tarts |
-
2020
- 2020-04-16 CN CN202010301019.5A patent/CN111490017A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010009160A1 (en) * | 1998-12-07 | 2001-07-26 | Bridgestone Corporation | Covering member for solar battery, sealing film and solar battery |
| US20070202362A1 (en) * | 2006-01-20 | 2007-08-30 | Neto Jarbas C D | Process of making a nanostructured thin film, self-cleaning nanostructured thin film and method to apply said film on lens surfaces and optical devices |
| CN101344601A (en) * | 2008-08-27 | 2009-01-14 | 吉林大学 | Method for preparing anti-fog anti-reflection coating layer based on layered packaging technique |
| CN102849962A (en) * | 2011-06-29 | 2013-01-02 | 比亚迪股份有限公司 | Preparation method of SiO2 super-hydrophobic film and super-hydrophobic material |
| CN105336873A (en) * | 2015-11-05 | 2016-02-17 | 南京济民信息技术有限公司 | Substrate for flexible photoelectronic device, and preparation method thereof |
| CN105399340A (en) * | 2015-12-14 | 2016-03-16 | 上海电力学院 | Super-hydrophobic high-transmittance SiO2 anti-reflecting thin film and preparation method thereof |
| CN105657303A (en) * | 2016-01-26 | 2016-06-08 | 电子科技大学 | Strong heat dissipation structure used for heat dissipation of laser television and preparation method thereof |
| CN110436795A (en) * | 2019-08-28 | 2019-11-12 | 福建工程学院 | A method of preparing the silica membrane of the structure of shape containing Egg Tarts |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112509984A (en) * | 2020-12-14 | 2021-03-16 | 电子科技大学 | Moisture-proof structure for optoelectronic device and preparation method thereof |
| CN112509985A (en) * | 2020-12-14 | 2021-03-16 | 电子科技大学 | Moisture-proof structure for optoelectronic device and preparation method thereof |
| CN112599422A (en) * | 2020-12-14 | 2021-04-02 | 电子科技大学 | High heat-resistant structure for heat dissipation of photoelectronic device and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111490017A (en) | Moisture-proof structure for optoelectronic device and preparation method thereof | |
| Wang et al. | Moisture‐triggered self‐healing flexible perovskite photodetectors with excellent mechanical stability | |
| US4699804A (en) | Process for producing electrically conductive composite polymer article | |
| KR102202997B1 (en) | Laminated structure manufacturing method, laminated structure, and electronic apparatus | |
| JP5835864B2 (en) | Method for preparing a nanoconductor for application to a polymer substrate | |
| EP3091587B1 (en) | Organic electronic device and fabrication method therefor | |
| KR100856148B1 (en) | Basic solution washable antistatic composition and polymer products manufactured by using the same | |
| US20150137049A1 (en) | Structures with surface-embedded additives and related manufacturing methods | |
| CN102604585B (en) | Electronic protecting glue, and preparation method and application thereof | |
| CN107022319A (en) | The preparation technology of antistatic UV visbreakings composition, diaphragm and the diaphragm | |
| TW200704685A (en) | Anti-static polyester film | |
| CN104916351A (en) | Flexible and transparent conductive film and preparation method thereof | |
| CN104629510B (en) | The coating peeled off the preparation method of boron nitride anticorrosive paint and its obtain, the application of coating | |
| CN103996457A (en) | Silver nanowire thin film and preparation method thereof, array substrate and display device | |
| CN102201538A (en) | Substrate for flexible photoelectronic device and preparation method thereof | |
| CN106336521B (en) | A kind of resin compound, transparent conductive film and its graphical preparation method | |
| KR20160085620A (en) | Preparing method for flexible substrate | |
| CN110878191B (en) | Bonding sheet for display and display including the same | |
| CN110364640B (en) | Packaging structure, packaging ink and application thereof | |
| CN109148717A (en) | OLED display panel and preparation method thereof | |
| CN111269599A (en) | Ultraviolet radiation prevention structure for display device and preparation method thereof | |
| CN105657303A (en) | Strong heat dissipation structure used for heat dissipation of laser television and preparation method thereof | |
| CN105957800B (en) | A kind of process of surface treatment of substrate | |
| CN108250469A (en) | A kind of production technology of nano-silver thread transparent conductive film | |
| CN114023492A (en) | Silver nanowire dispersion liquid with low ultraviolet absorption and application of silver nanowire dispersion liquid in conductive ink and conductive film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200804 |