CN111254409A - Preparation method of diamond film first wall facing to plasma - Google Patents
Preparation method of diamond film first wall facing to plasma Download PDFInfo
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- CN111254409A CN111254409A CN201811466051.8A CN201811466051A CN111254409A CN 111254409 A CN111254409 A CN 111254409A CN 201811466051 A CN201811466051 A CN 201811466051A CN 111254409 A CN111254409 A CN 111254409A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
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- Organic Chemistry (AREA)
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- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a plasma-oriented diamond film first wall and a preparation method thereof, which combines ultrasonic cleaning, thermal electron enhanced hydrogen/argon plasma etching purification treatment and diamond coating hot wire chemical vapor deposition, and grows a hydrogen ion etching resistant diamond film on the surface of graphite, and has the beneficial effects that: compared with graphite and low-activation martensitic steel, the diamond film has extremely high thermal conductivity, high hydrogen ion etching resistance, low deuterium and tritium adsorption capacity and extremely high tritium permeation resistance, and is expected to become another plasma-oriented material choice of a fusion experimental device. The compact diamond film grows on the graphite surface with the square of 200mm, and no surface micro-morphology change is observed under an electron microscope after the compact diamond film is irradiated for 10 hours by hydrogen ions with 400eV and 50mA, which shows that the diamond film has higher hydrogen ion etching resistance.
Description
Technical Field
The invention belongs to a wall treatment method of a fusion experimental device, and particularly relates to a first wall of a diamond film facing to plasma and a preparation method.
Background
Controlled thermonuclear fusion energy is a major approach to effectively address the future energy needs of humans. One of the key problems faced by the use of controlled thermonuclear fusion energy is that currently there is no material that fully meets the working requirements of the first wall structure materials facing high temperature plasmas, i.e. Plasma Facing Materials (PFMs). Current PFMs candidate materials for thermal gates include beryllium, carbon-based materials, and tungsten. Beryllium has the advantages of low atomic number, high thermal conductivity, good adaptability to plasma, high specific strength, high elastic modulus, small pollution to plasma, small neutron absorption interface, large scattering cross section and the like, and is selected as the PFMs of the International thermonuclear test reactor plan (ITER), but has the defects of low melting point, high vapor pressure, high physical sputtering yield, poor sputtering resistance, short service life and the like. Tungsten has the advantages of high melting point and thermal conductivity, small adsorption amount to deuterium and tritium, strong sputtering resistance, high plasma scouring resistance, no reaction with hydrogen and the like, is PFMs with a good prospect, but can seriously affect the quality and stability of plasma after being sputtered into reactor core plasma as a high-Z element, and can generate filamentation after plasma irradiation.
The carbon-based material has the advantages of low atomic number, high thermal conductivity, high thermal shock resistance, certain strength at high temperature, good compatibility with plasma, high bearing capacity on abnormal events in a Tokamak device and the like, is a preferred material for PFMs (fusion experimental devices) of many early stages, and has the defects of poor sputtering resistance, high hydrogen corrosion rate, high adsorptivity on deuterium and tritium and the like. The carbon-based materials used earliest were high purity graphite; however, with the development of nuclear fusion research, pure graphite materials cannot meet the use requirements, and people improve the chemical corrosion resistance of graphite and reduce tritium retention by doping boron, silicon, titanium, SiC and the like, but the effect is poor. Diamond is the material with the highest thermal conductivity and elastic modulus, the etching rate of hydrogen ions is much lower than that of graphite, and the adsorption amount of deuterium and tritium is lower. If a layer of diamond film with high bonding strength can be prepared on the surface of graphite, the hydrogen ion etching resistance and deuterium tritium absorption performance of the carbon-based PFMs can be obviously improved, and the method has an important promotion effect on the research and utilization of the controlled thermonuclear fusion energy.
Disclosure of Invention
The invention aims to provide a plasma-oriented diamond film first wall and a preparation method thereof, which can improve the hydrogen ion etching resistance and deuterium-tritium adsorption performance of a carbon-based plasma-oriented first wall material.
The technical scheme of the invention is as follows: a preparation method of a first wall of a diamond film facing to plasma combines ultrasonic cleaning, thermal electron enhanced hydrogen/argon plasma etching purification treatment and diamond coating hot wire chemical vapor deposition, and grows a hydrogen ion etching resistant diamond film on the surface of graphite, and the method comprises the following steps:
(1) firstly, removing a graphite or low-activation martensitic steel substrate surface pollution layer by using an ultrasonic cleaning technology;
(2) then, utilizing hydrogen/argon plasma generated by hot wire chemical vapor deposition equipment to perform etching purification treatment on the surface of the graphite or low-activation martensitic steel substrate;
(3) finally, the diamond coating is grown by hot wire chemical vapor deposition equipment.
Depositing a SiC transition layer by adopting a hot wire chemical vapor deposition process before the step (3); the graphite is high-purity graphite, the low-activation martensitic steel is domestic CLF-1 and CLAM, the low-activation martensitic steel mainly comprises Fe and Cr, a small amount of V, Mn, W, Ta and other elements are added, and the specific component proportion is (in mass percent): fe over 85%, Cr between 7-13%, V between 0.1-0.3%, W between 1.0-2.0%, Mn between 0.1-0.6%, Ta between 0.01-0.2%.
The hydrogen/argon plasma required by the step (2) is generated by the collision of hot electrons emitted by the hot wire and the mixed gas of argon and hydrogen, the temperature range of the hot wire is 1800-2500 ℃, the total pressure range of the mixed gas of argon and hydrogen is 0.1-10Pa, and the proportion range of argon and hydrogen is 0.1-10.
And (3) during the operation in the step (2), the anode of the hot wire discharge power supply is connected with the hot wire, the cathode of the hot wire discharge power supply is connected with the workpiece table, and the output voltage range of the hot wire discharge power supply is 20-300V.
When the step (2) is operated, the temperature of the substrate is controlled to be 800-2000 ℃.
And (3) during operation, simultaneously introducing hydrogen and carbon-containing gas into the vacuum chamber through the gas inlet system, wherein the carbon-containing gas can be methane, acetylene, ethanol, acetone and toluene.
When the step (3) is operated, the temperature range of the hot wire is 1800-.
And (3) when the SiC transition layer is prefabricated, connecting the negative electrode of a hot wire discharge power supply with a hot wire, connecting the positive electrode of the hot wire discharge power supply with a workpiece table, and setting the output voltage range of the hot wire discharge power supply to be 10-300V.
And (3) controlling the temperature of the matrix at 600-1200 ℃ during the operation of prefabricating the SiC transition layer.
The invention has the beneficial effects that: compared with graphite and low-activation martensitic steel, the diamond film has extremely high thermal conductivity, high hydrogen ion etching resistance, low deuterium and tritium adsorption capacity and extremely high tritium permeation resistance, and is expected to become another plasma-oriented material choice of a fusion experimental device. The compact diamond film grows on the graphite surface with the square of 200mm, and no surface micro-morphology change is observed under an electron microscope after the compact diamond film is irradiated for 10 hours by hydrogen ions with 400eV and 50mA, which shows that the diamond film has higher hydrogen ion etching resistance.
Detailed Description
The present invention will be described in further detail with reference to specific examples.
The preparation method of the first wall of the diamond film facing to the plasma mainly comprises the following steps: ultrasonic cleaning, hot electron enhanced hydrogen/argon plasma etching purification treatment and diamond coating hot wire chemical vapor deposition are combined, and a hydrogen ion etching resistant diamond film grows on the surface of graphite, and the method comprises the following steps:
(1) firstly, removing a graphite or low-activation martensitic steel substrate surface pollution layer by using an ultrasonic cleaning technology;
(2) then, utilizing hydrogen/argon plasma generated by hot wire chemical vapor deposition equipment to perform etching purification treatment on the surface of the graphite or low-activation martensitic steel substrate;
(3) finally, the diamond coating is grown by hot wire chemical vapor deposition equipment.
On the basis of the preparation method, a SiC transition layer can be added between the graphite or low-activation martensitic steel substrate and the diamond film to enhance the interface bonding force.
Depositing a SiC transition layer by adopting a hot filament chemical vapor deposition process before the preparation method (3);
the graphite is high-purity graphite, the low-activation martensitic steel is domestic CLF-1 and CLAM, the low-activation martensitic steel mainly comprises Fe and Cr, a small amount of V, Mn, W, Ta and other elements are added, and the specific component proportion is (in mass percent): fe over 85%, Cr between 7-13%, V between 0.1-0.3%, W between 1.0-2.0%, Mn between 0.1-0.6%, Ta between 0.01-0.2%.
In the preparation method, the hot wire chemical vapor deposition equipment consists of a vacuum chamber, a vacuum pump, a vacuum measurement system, an air inlet system, a hot wire, a workpiece table, a hot wire heating power supply, a hot wire discharging power supply and an electric control cabinet.
In the preparation method, a hot wire heating power supply of the hot wire chemical vapor deposition equipment is an alternating current power supply; the hot wire discharge power supply is a direct current power supply.
In the preparation method, the hydrogen/argon plasma required by the step (2) is generated by the collision of hot electrons emitted by the hot wire and the mixed gas of argon and hydrogen, the temperature range of the hot wire is 1800-2500 ℃, the total pressure range of the mixed gas of argon and hydrogen is 0.1-10Pa, and the proportion range of argon and hydrogen is 0.1-10.
In the preparation method, when the step (2) is operated, the anode of the hot wire discharge power supply is connected with the hot wire, the cathode of the hot wire discharge power supply is connected with the workpiece table, and the output voltage range of the hot wire discharge power supply is 20-300V.
In the preparation method, the temperature of the substrate is controlled at 800-2000 ℃ during the operation of the step (2).
In the preparation method, when the step (3) is operated, hydrogen and carbon-containing gas are simultaneously introduced into the vacuum chamber through the gas inlet system, wherein the carbon-containing gas can be methane, acetylene, ethanol, acetone and toluene.
In the preparation method, when the step (3) is operated, the temperature of the hot wire is 1800-2500 ℃, the total pressure of the mixed gas of hydrogen and carbon-containing gas is 100-10000Pa, the hydrogen content of the mixed gas is 90-99.5%, and the carbon-containing gas content is 0.5-10%.
In the preparation method, when the SiC transition layer is prefabricated, hydrogen, carbon-containing gas and silane are simultaneously introduced into the vacuum chamber through the gas inlet system, wherein the carbon-containing gas can be methane, acetylene, ethanol, acetone and toluene.
In the preparation method, when the SiC transition layer is prefabricated, the temperature range of the hot wire is 1800-2500 ℃, the total pressure range of the mixed gas of hydrogen, carbon-containing gas and silane is 50-5000Pa, the hydrogen content range of the mixed gas is 90-99%, the carbon-containing gas content range is 0.1-10%, and the silane content range is 0.1-10%.
In the preparation method, when the step (3) and the operation of prefabricating the SiC transition layer are carried out, the negative electrode of the hot wire discharge power supply is connected with the hot wire, the positive electrode of the hot wire discharge power supply is connected with the workpiece table, and the output voltage range of the hot wire discharge power supply is 10-300V.
In the preparation method, the temperature of the matrix is controlled to be 600-1200 ℃ when the step (3) and the operation of prefabricating the SiC transition layer are carried out.
Example 1
(1) Firstly, removing a surface pollution layer of the high-purity graphite by using an ultrasonic cleaning technology. (2) And then the graphite surface is etched and purified by using hydrogen/argon plasma generated by hot wire chemical vapor deposition equipment. And introducing argon and hydrogen into the vacuum chamber in the etching process, wherein the flow rates of the argon and the hydrogen are respectively 50 sccm and 200sccm, and the total gas pressure is controlled to be 1 Pa. The heating power supply of the hot wire is an alternating current power supply, and the heating temperature of the hot wire is controlled to 2200 ℃; the hot wire is connected with the anode of a hot wire discharge power supply, the sample table is connected with the cathode of the discharge power supply, and the discharge voltage is 200V. The substrate temperature was controlled at 1500 ℃. (3) And preparing a SiC transition layer on the surface of the etched graphite by using hot wire chemical vapor deposition equipment. And introducing hydrogen, methane and silane into the vacuum chamber in the process of preparing the SiC transition layer, wherein the flow rates of the hydrogen, the methane and the silane are respectively 200sccm, 5sccm and 5sccm, and the total gas pressure is controlled at 200 Pa. The heating power supply of the hot wire is an alternating current power supply, and the heating temperature of the hot wire is controlled to 2200 ℃; the hot wire is connected with the negative electrode of a hot wire discharge power supply, the sample table is connected with the voltage of the discharge power supply, and the discharge voltage is 100V. The temperature of the substrate was controlled at 900 ℃. (4) Finally, the diamond coating is grown by hot wire chemical vapor deposition equipment. And introducing hydrogen and methane into the vacuum chamber when the diamond coating grows, wherein the flow rates of the hydrogen and the methane are respectively 200sccm and 2sccm, and the total gas pressure is controlled at 3000 Pa. The heating power supply of the hot wire is an alternating current power supply, and the heating temperature of the hot wire is controlled to 2200 ℃; the hot wire is connected with the negative electrode of a hot wire discharge power supply, the sample table is connected with the voltage of the discharge power supply, and the discharge voltage is 50V. The temperature of the substrate was controlled at 900 ℃.
Example 2
(1) Firstly, removing a surface pollution layer of the high-purity graphite by using an ultrasonic cleaning technology. (2) And then the graphite surface is etched and purified by using hydrogen/argon plasma generated by hot wire chemical vapor deposition equipment. And introducing argon and hydrogen into the vacuum chamber in the etching process, wherein the flow rates of the argon and the hydrogen are respectively 50 sccm and 500sccm, and the total gas pressure is controlled to be 2 Pa. The heating power supply of the hot wire is an alternating current power supply, and the heating temperature of the hot wire is controlled to be 2100 ℃; the hot wire is connected with the anode of a hot wire discharge power supply, the sample table is connected with the cathode of the discharge power supply, and the discharge voltage is 300V. The temperature of the substrate was controlled at 1200 ℃. (3) And preparing a SiC transition layer on the surface of the etched graphite by using hot wire chemical vapor deposition equipment. And introducing hydrogen, methane and silane into the vacuum chamber in the process of preparing the SiC transition layer, wherein the flow rates of the hydrogen, the acetylene and the silane are respectively 300 sccm, 2sccm and 3sccm, and the total gas pressure is controlled at 1000 Pa. The heating power supply of the hot wire is an alternating current power supply, and the heating temperature of the hot wire is controlled to be 2100 ℃; the hot wire is connected with the negative electrode of a hot wire discharge power supply, the sample table is connected with the voltage of the discharge power supply, and the discharge voltage is 80V. The temperature of the substrate was controlled at 800 ℃. (4) Finally, the diamond coating is grown by hot wire chemical vapor deposition equipment. And introducing hydrogen and acetylene into the vacuum chamber when the diamond coating grows, wherein the flow rates of the hydrogen and the acetylene are respectively 300 sccm and 2sccm, and the total gas pressure is controlled at 5000 Pa. The heating power supply of the hot wire is an alternating current power supply, and the heating temperature of the hot wire is controlled to be 2100 ℃; the hot wire is connected with the negative electrode of a hot wire discharge power supply, the sample table is connected with the voltage of the discharge power supply, and the discharge voltage is 80V. The temperature of the substrate was controlled at 800 ℃.
Claims (9)
1. The preparation method of the diamond film first wall facing to the plasma is characterized in that: ultrasonic cleaning, hot electron enhanced hydrogen/argon plasma etching purification treatment and diamond coating hot wire chemical vapor deposition are combined, and a hydrogen ion etching resistant diamond film grows on the surface of graphite, and the method comprises the following steps:
(1) firstly, removing a graphite or low-activation martensitic steel substrate surface pollution layer by using an ultrasonic cleaning technology;
(2) then, utilizing hydrogen/argon plasma generated by hot wire chemical vapor deposition equipment to perform etching purification treatment on the surface of the graphite or low-activation martensitic steel substrate;
(3) finally, the diamond coating is grown by hot wire chemical vapor deposition equipment.
2. A method of preparing a plasma-facing diamond film first wall according to claim 1, wherein: depositing a SiC transition layer by adopting a hot wire chemical vapor deposition process before the step (3); the graphite is high-purity graphite, the low-activation martensitic steel is domestic CLF-1 and CLAM, the low-activation martensitic steel mainly comprises Fe and Cr, a small amount of V, Mn, W, Ta and other elements are added, and the specific component proportion is (in mass percent): fe over 85%, Cr between 7-13%, V between 0.1-0.3%, W between 1.0-2.0%, Mn between 0.1-0.6%, Ta between 0.01-0.2%.
3. A method of preparing a plasma-facing diamond film first wall according to claim 1, wherein: the hydrogen/argon plasma required by the step (2) is generated by the collision of hot electrons emitted by the hot wire and the mixed gas of argon and hydrogen, the temperature range of the hot wire is 1800-2500 ℃, the total pressure range of the mixed gas of argon and hydrogen is 0.1-10Pa, and the proportion range of argon and hydrogen is 0.1-10.
4. A method of preparing a plasma-facing diamond film first wall according to claim 1, wherein: and (3) during the operation in the step (2), the anode of the hot wire discharge power supply is connected with the hot wire, the cathode of the hot wire discharge power supply is connected with the workpiece table, and the output voltage range of the hot wire discharge power supply is 20-300V.
5. A method of preparing a plasma-facing diamond film first wall according to claim 1, wherein: when the step (2) is operated, the temperature of the substrate is controlled to be 800-2000 ℃.
6. A method of preparing a plasma-facing diamond film first wall according to claim 1, wherein: and (3) during operation, simultaneously introducing hydrogen and carbon-containing gas into the vacuum chamber through the gas inlet system, wherein the carbon-containing gas can be methane, acetylene, ethanol, acetone and toluene.
7. A method of preparing a plasma-facing diamond film first wall according to claim 1, wherein: when the step (3) is operated, the temperature range of the hot wire is 1800-.
8. A method of preparing a plasma-facing diamond film first wall according to claim 1, wherein: and (3) when the SiC transition layer is prefabricated, connecting the negative electrode of a hot wire discharge power supply with a hot wire, connecting the positive electrode of the hot wire discharge power supply with a workpiece table, and setting the output voltage range of the hot wire discharge power supply to be 10-300V.
9. A method of preparing a plasma-facing diamond film first wall according to claim 1, wherein: and (3) controlling the temperature of the matrix at 600-1200 ℃ during the operation of prefabricating the SiC transition layer.
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| JPH04353794A (en) * | 1991-05-30 | 1992-12-08 | Japan Atom Energy Res Inst | Cladding method for the first wall of fusion reactor |
| US5527559A (en) * | 1994-07-18 | 1996-06-18 | Saint Gobain/Norton Industrial Ceramics Corp. | Method of depositing a diamond film on a graphite substrate |
| JP2007138303A (en) * | 2006-12-25 | 2007-06-07 | Toyo Tanso Kk | Diamond-coated carbon member and method for manufacturing the same |
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| CN101880866A (en) * | 2010-06-14 | 2010-11-10 | 大连理工大学 | Method for preparing diamond-silicon carbide-cobalt disilicide composite interlayer of diamond coating on hard alloy |
| CN104962876A (en) * | 2015-06-12 | 2015-10-07 | 西南科技大学 | Boron-doped diamond film material on surface of graphite and preparation method thereof |
| CN105624642A (en) * | 2016-03-16 | 2016-06-01 | 大连理工大学 | Method for directly depositing diamond film on graphite substrate |
| CN107545936A (en) * | 2017-08-22 | 2018-01-05 | 廊坊西波尔钻石技术有限公司 | Diamond film and graphite composite material |
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2018
- 2018-12-03 CN CN201811466051.8A patent/CN111254409A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01201478A (en) * | 1987-10-31 | 1989-08-14 | Sumitomo Electric Ind Ltd | Diamond-coated carbon member |
| JPH04353794A (en) * | 1991-05-30 | 1992-12-08 | Japan Atom Energy Res Inst | Cladding method for the first wall of fusion reactor |
| US5527559A (en) * | 1994-07-18 | 1996-06-18 | Saint Gobain/Norton Industrial Ceramics Corp. | Method of depositing a diamond film on a graphite substrate |
| JP2007138303A (en) * | 2006-12-25 | 2007-06-07 | Toyo Tanso Kk | Diamond-coated carbon member and method for manufacturing the same |
| CN101787520A (en) * | 2010-03-24 | 2010-07-28 | 中国地质大学（北京） | Tungsten-titanium co-doped diamond coating material and preparation technique thereof |
| CN101880866A (en) * | 2010-06-14 | 2010-11-10 | 大连理工大学 | Method for preparing diamond-silicon carbide-cobalt disilicide composite interlayer of diamond coating on hard alloy |
| CN104962876A (en) * | 2015-06-12 | 2015-10-07 | 西南科技大学 | Boron-doped diamond film material on surface of graphite and preparation method thereof |
| CN105624642A (en) * | 2016-03-16 | 2016-06-01 | 大连理工大学 | Method for directly depositing diamond film on graphite substrate |
| CN107545936A (en) * | 2017-08-22 | 2018-01-05 | 廊坊西波尔钻石技术有限公司 | Diamond film and graphite composite material |
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Application publication date: 20200609 |