CN111244761B - 一种GaSb基InSb量子点及其制备方法 - Google Patents

一种GaSb基InSb量子点及其制备方法 Download PDF

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CN111244761B
CN111244761B CN202010066837.1A CN202010066837A CN111244761B CN 111244761 B CN111244761 B CN 111244761B CN 202010066837 A CN202010066837 A CN 202010066837A CN 111244761 B CN111244761 B CN 111244761B
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欧欣
张晓蕾
王庶民
岳丽
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Shanghai Institute of Microsystem and Information Technology of CAS
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Abstract

本申请提供一种GaSb基InSb量子点及其制备方法，该GaSb基InSb量子点的制备方法包括以下步骤：获取GaSb衬底；将GaSb衬底放入分子束外延生长室进行脱氧处理；在GaSb衬底上生长GaSb缓冲层；在GaSb缓冲层上生长AlAs形核层；在AlAs形核层上生长InSb量子点层。本申请实施例提供的GaSb基InSb量子点的制备方法中，在生长InSb量子点之前先生长原子层尺度的AlAs层，利用AlAs和GaSb之间较大的晶格失配以及表面能差异来形成有效的AlAs形核层；该制备方法既可以改变InSb量子点成核界面的阴离子类型又可以增加InSb量子点生长界面的粗糙度，二者都可以降低In原子的扩散长度，提高InSb量子点的形核中心，从而提高InSb量子点的密度。

Description

一种GaSb基InSb量子点及其制备方法
技术领域
本申请涉及量子点制备技术领域，特别涉及一种GaSb基InSb量子点及其制备方法。
背景技术
Ⅲ族/Ⅴ族量子点因为具备一些独一无二的物理特性而被广泛应用于激光器、探测器等光电器件的研究，例如量子点激光器一般具有高增益、低阈值电流密度以及低温度敏感系数等优势。InSb作为一种窄带隙半导体，因其拥有的高电子迁移率等特性受到了越来越多的关注。尤其是InSb较小的禁带宽度使其在3-5微米高性能中红外激光器的研究具有重要意义。
目前关于InSb量子点系统的研究主要分为两种，分别是InSb/InAs和InSb/GaSb。InSb/GaSb系统的晶格失配度与已经被广泛研究的InAs/GaAs系统极其相似，分别为6.3％和7.3％，这一特性吸引了越来越多的研究者去挖掘InSb/GaSb系统的可能性。此外GaSb衬底相比于InAs衬底发展更成熟，价格更便宜，更具有商业价值。
通过分子束外延技术在GaSb衬底上外延生长InSb量子点是一种常见方法。研究发现在GaSb上生长InSb量子点存在很多问题。和其它Ⅲ/Ⅴ量子点的生长相似，InSb在GaSb表面的生长也遵循Stranski-Krastanow的生长模式。由于In原子和Sb原子之间的键能较小，In原子在GaSb界面的扩散长度较大，使得生长出来的InSb量子点的的尺寸较大，密度较低、存在大量缺陷并且处于弛豫状态，因此如何减小In原子的扩散长度，获得高密度、高质量的GaSb基InSb量子点一直是一个难题。由于InSb量子点密度难以提高，目前国际上关于在GaSb衬底上生长InSb量子点的研究大多停留在量子点的形貌上，对于其发光特性未能进行深入探索，近年来关于InSb量子点的研究进程缓慢。因此，想要进一步获得高性能的GaSb基InSb量子点光电器件，迫切需要找到有效提高InSb量子点密度的方法，从而获得高密度、高质量的InSb量子点。
发明内容
本申请要解决是如何提高InSb量子点密度的技术问题。
为解决上述技术问题，本申请实施例公开了一种GaSb基InSb量子点的制备方法，包括以下步骤：
获取GaSb衬底；
将GaSb衬底放入分子束外延生长室进行脱氧处理；
在GaSb衬底上生长GaSb缓冲层；
在GaSb缓冲层上生长AlAs形核层；
在AlAs形核层上生长InSb量子点层。
进一步地，脱氧处理的脱氧温度为630-680℃。
进一步地，脱氧处理的脱氧时间为10-20分钟。
进一步地，GaSb缓冲层的厚度为100-200纳米。
进一步地，GaSb缓冲层的生长温度为580-630℃。
进一步地，AlAs形核层的厚度为0.5-1个原子层。
进一步地，AlAs形核层的生长温度为380-480℃。
进一步地，InSb量子点层的厚度为2-3个原子层。
进一步地，InSb量子点层的生长温度为380-480℃。
本申请另一方面提供一种GaSb基InSb量子点，包括GaSb衬底、GaSb缓冲层、AlAs形核层和InSb量子点层；
GaSb衬底、GaSb缓冲层、AlAs形核层和InSb量子点层依次层叠连接。
采用上述技术方案，本申请具有如下有益效果：
本申请实施例提供的GaSb基InSb量子点的制备方法中，在生长InSb量子点之前先生长原子层尺度的AlAs层，利用AlAs和GaSb之间较大的晶格失配以及表面能差异来形成有效的AlAs形核层；该制备方法既可以改变InSb量子点成核界面的阴离子类型又可以增加InSb量子点生长界面的粗糙度，二者都可以降低In原子的扩散长度，提高InSb量子点的形核中心，从而提高InSb量子点的密度。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例一种GaSb基InSb量子点的制备方法的流程示意图；
图2为本申请实施例未插入AlAs形核层的GaSb基InSb量子点样品的原子力显微镜图像；
图3为本申请实施例插入1个原子层厚的AlAs形核层的GaSb基InSb量子点样品的原子力显微镜图像；
图4为本申请实施例一种GaSb基InSb量子点的结构示意图。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动的前提下所获得的所有其他实施例，都属于本申请保护的范围。
此处所称的“一个实施例”或“实施例”是指可包含于本申请至少一个实现方式中的特定特征、结构或特性。在本申请实施例的描述中，需要理解的是，术语“上”、“下”、“顶”、“底”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含的包括一个或者更多个该特征。而且，术语“第一”、“第二”等是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换，以便这里描述的本申请的实施例能够以除了在这里图示或描述的那些以外的顺序实施。
请参见图1，图1为本申请实施例一种GaSb基InSb量子点的制备方法的流程示意图，该制备方法包括以下步骤：
获取GaSb衬底；
将GaSb衬底放入分子束外延生长室进行脱氧处理；
在GaSb衬底上生长GaSb缓冲层；
在GaSb缓冲层上生长AlAs形核层；
在AlAs形核层上生长InSb量子点层。
本申请实施例中，脱氧处理的脱氧温度为630-680℃，脱氧处理的脱氧时间为10-20分钟。
本申请实施例中，GaSb缓冲层的厚度为100-200纳米，GaSb缓冲层的生长温度为580-630℃。
本申请实施例中，AlAs形核层的厚度为0.5-1个原子层，AlAs形核层的生长温度为380-480℃。
本申请实施例中，InSb量子点层的厚度为2-3个原子层，InSb量子点层的生长温度为380-480℃。
本申请实施例提供的GaSb基InSb量子点的制备方法中，在生长InSb量子点之前先生长原子层尺度的AlAs层，利用AlAs和GaSb之间较大的晶格失配以及表面能差异来形成有效的AlAs形核层；该制备方法既可以改变InSb量子点成核界面的阴离子类型又可以增加InSb量子点生长界面的粗糙度，二者都可以降低In原子的扩散长度，提高InSb量子点的形核中心，从而提高InSb量子点的密度。图1为在GaSb缓冲层上直接生长InSb量子点层，未生长AlAs形核层的InSb量子点样品的原子力显微镜图像，；图2为插入1个原子层厚的AlAs形核层的GaSb基InSb量子点样品的原子力显微镜图像，其在GaSb缓冲层上生长1个原子层厚的AlAs形核层，再生长InSb量子点层；图1和图2其它生长条件均一致。从图1中计算的InSb量子点密度约为4.1×109/cm2，从图2中计算的InSb量子点密度约为1.3×1010/cm2，后者约为前者的3倍，说明插入AlAs形核层可以有效提高InSb量子点密度，证明了本申请实施例提供的GaSb基InSb量子点的制备方法可以有效提高InSb量子点的密度。
本申请实施例另一方面提供一种GaSb基InSb量子点，包括GaSb衬底、GaSb缓冲层、AlAs形核层和InSb量子点层；
GaSb衬底、GaSb缓冲层、AlAs形核层和InSb量子点层依次层叠连接。
本申请实施例中，GaSb缓冲层的厚度为100-200纳米，AlAs形核层的厚度为0.5-1个原子层，InSb量子点层的厚度为2-3个原子层；本申请实施例提供的GaSb基InSb量子点可以采用分子束外延方法制备。
以上仅为本申请的较佳实施例，并不用以限制本申请，凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的保护范围之内。

Claims (2)

1.一种GaSb基InSb量子点的制备方法，其特征在于，包括以下步骤：
获取GaSb衬底；
将所述GaSb衬底放入分子束外延生长室进行脱氧处理；所述脱氧处理的脱氧温度为630-680℃；所述脱氧处理的脱氧时间为10-20分钟；
在所述GaSb衬底上生长GaSb缓冲层；所述GaSb缓冲层的厚度为100-200纳米；所述GaSb缓冲层的生长温度为580-630℃；
在所述GaSb缓冲层上生长AlAs形核层；所述AlAs形核层的厚度为0.5-1个原子层；所述AlAs形核层的生长温度为380-480℃；
在所述AlAs形核层上生长InSb量子点层；所述InSb量子点层的厚度为2-3个原子层；所述InSb量子点层的生长温度为380-480℃。
2.一种GaSb基InSb量子点，其特征在于，利用权利要求1所述的制备方法制备得到，所述GaSb基InSb量子点包括GaSb衬底、GaSb缓冲层、AlAs形核层和InSb量子点层；
所述GaSb衬底、所述GaSb缓冲层、所述AlAs形核层和所述InSb量子点层依次层叠连接。
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