CN111244750A - Diode of integrated backlight detector and preparation method thereof - Google Patents
Diode of integrated backlight detector and preparation method thereof Download PDFInfo
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- CN111244750A CN111244750A CN202010060361.0A CN202010060361A CN111244750A CN 111244750 A CN111244750 A CN 111244750A CN 202010060361 A CN202010060361 A CN 202010060361A CN 111244750 A CN111244750 A CN 111244750A
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- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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Abstract
The invention discloses a diode of an integrated backlight detector and a preparation method thereof, wherein the method comprises the following steps: forming an optical waveguide with a preset pattern on the front surface of the semiconductor epitaxial wafer; forming electric isolation in a first area on the front surface of the semiconductor epitaxial wafer to obtain an absorption area; forming a first electrode in a second area and a third area on the front surface of the semiconductor epitaxial wafer, wherein the second area is positioned on one side of the absorption area, and the third area is positioned on the other side of the absorption area or in the absorption area; and forming a second electrode on the back surface of the semiconductor epitaxial wafer to obtain the diode of the integrated backlight detector. By implementing the invention, the optical waveguide structure is formed on the semiconductor epitaxial wafer, and the absorption region is formed in an electric isolation mode, so that the light emitting region and the detection region can be formed in the regions at two sides of the absorption region, and the monitoring and the control of the light emitting power of the device can be further realized. Meanwhile, the detector material does not need to be extended again, the manufacturing process is simple, the detection efficiency is high, and the monitoring cost of the luminous power of the super-radiation light-emitting diode can be effectively reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric integration, in particular to a diode of an integrated backlight detector and a preparation method thereof.
Background
The super-radiation light emitting diode is widely applied to the light sensing field due to the characteristics of wide spectrum, high power, good coherence and the like. The superradiation light emitting diode needs to inhibit the resonance of light, so that a light absorption area is introduced, the optical gain of the superradiation light emitting diode is smaller than that of an F-P cavity laser, the threshold current of the superradiation light emitting diode is large, heat is more, the stability is poor, and the service life of a chip is influenced.
By adopting an output light monitoring closed-loop feedback technology, the output light power can be monitored in real time, and the driving current is adjusted to maintain the constant power output of light. However, the coupling of one light path out of the forward direction for monitoring results in a loss of output power, and the scheme is complicated and costly. Therefore, the light emitting diode with backlight detection is produced, the backlight detection technology can avoid the loss of forward output light, the integration is easy, and the overall reliability is improved.
In the existing integration method of the diode and the backlight detector, an RIE etching method is adopted to form an isolation groove between the laser diode and the backlight detector, and SiN is filled in the groove to realize the electrical isolation of the laser diode and the detector. However, the waveguide of the diode and the detector formed by the method is discontinuous, and light beams near the detector are dispersed, so that the method is not beneficial to weak light detection; and the filled SiN is difficult to form a good high-reflection film, and cannot ensure high-quality beam output.
Disclosure of Invention
In view of this, embodiments of the present invention provide a diode of an integrated backlight detector and a method for manufacturing the same, so as to solve the technical problem that the conventional diode of the integrated backlight detector is not favorable for weak light detection.
The technical scheme provided by the invention is as follows:
the first aspect of the embodiments of the present invention provides a method for manufacturing a diode of an integrated backlight detector, including the following steps: forming an optical waveguide with a preset pattern on the front surface of the semiconductor epitaxial wafer; forming electric isolation in a first area on the front surface of the semiconductor epitaxial wafer to obtain an absorption area; forming a first electrode in a second area and a third area on the front surface of the semiconductor epitaxial wafer, wherein the second area is positioned on one side of the absorption area, and the third area is positioned on the other side of the absorption area or in the absorption area; and forming a second electrode on the back surface of the semiconductor epitaxial wafer to obtain the diode of the integrated backlight detector.
Optionally, before forming the optical waveguide with the preset pattern on the front side of the semiconductor epitaxial wafer, the method includes: selecting a substrate; and sequentially growing a lower contact layer, a lower transition layer, an active layer, an upper transition layer and an upper contact layer on the substrate to form the semiconductor epitaxial wafer.
Optionally, forming a preset pattern of optical waveguides on the front surface of the semiconductor epitaxial wafer includes: depositing a mask layer on the front surface of the semiconductor epitaxial wafer; photoetching the mask layer to obtain a preset pattern; and etching the mask layer according to the preset pattern to obtain the optical waveguide with the preset pattern.
Optionally, forming an electrical isolation in the first region of the front side of the semiconductor epitaxial wafer, obtaining an absorption region, including: and forming electric isolation in the first area of the front surface of the semiconductor epitaxial wafer by adopting a proton implantation or diffusion process to obtain an absorption area.
Optionally, forming a first electrode in the second region and the third region on the front surface of the semiconductor epitaxial wafer includes: forming a passivation layer on the front surface of the semiconductor epitaxial wafer; forming electrode openings in the second and third regions of the passivation layer; a first electrode is formed in the electrode opening.
Optionally, the method for manufacturing a diode of an integrated backlight detector further includes: and forming antireflection films on the light-emitting end face and the backlight end face of the diode.
A second aspect of an embodiment of the present invention provides a diode for an integrated backlight detector, including: a semiconductor epitaxial wafer, the front surface of which has an optical waveguide structure, the first region of which contains an absorption region for electrical isolation; the first electrode is arranged in a second area and a third area on the front surface of the semiconductor epitaxial wafer, the second area is positioned on one side of the absorption area, and the third area is positioned on the other side of the absorption area or in the absorption area; and the second electrode is arranged on the back surface of the semiconductor epitaxial wafer.
Optionally, the diode of the integrated backlight detector further comprises: and the passivation layer is arranged on the front surface of the semiconductor epitaxial wafer, the second region and the third region of the passivation layer comprise electrode openings, and the first electrode is arranged in the electrode openings.
Optionally, the diode of the integrated backlight detector further comprises: and the antireflection film is arranged on the light-emitting end face and the backlight end face of the diode.
Optionally, the optical waveguide structure is one or more of a straight waveguide structure, a curved waveguide structure, or a tapered waveguide structure.
The technical scheme of the invention has the following advantages:
according to the diode of the integrated backlight detector and the preparation method of the diode of the integrated backlight detector, the optical waveguide structure is formed on the semiconductor epitaxial wafer, and the absorption region is formed in an electric isolation mode, so that the light emitting region and the detection region can be formed in the regions on two sides of the absorption region, the light emitting diode and the photoelectric detector can be formed on the same epitaxial wafer, and the light emitting power of a device can be monitored and controlled. Meanwhile, the semiconductor epitaxial wafer only has one active region structural layer, and the light emitting diode and the detector can respectively realize light emitting and photoelectric conversion by using the active region structural layer.
The diode of the integrated backlight detector and the preparation method thereof provided by the embodiment of the invention can ensure that the formed optical waveguide penetrates through three sections of areas, namely the light emitting area, the absorption area and the photosensitive area, and the optical waveguides of the light emitting diode and the photoelectric detector are continuous and have no cross section, so that the backlight can enter the detector more intensively, and the detection sensitivity is improved. Meanwhile, the detector material does not need to be extended again, the manufacturing process is simple, the detection efficiency is high, and the monitoring cost of the luminous power of the super-radiation light-emitting diode can be effectively reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a flow chart of a method for manufacturing a diode of an integrated backlight detector according to an embodiment of the present invention;
FIG. 2 is a flow chart of a method for manufacturing a diode of an integrated backlight detector according to another embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a diode obtained by a method for manufacturing a diode of an integrated backlight detector according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a diode structure obtained by a diode manufacturing method for an integrated backlight detector according to another embodiment of the present invention;
fig. 5 is a schematic structural diagram of a diode of an integrated backlight detector in an embodiment of the invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The embodiment of the invention provides a preparation method of a diode of an integrated backlight detector, which comprises the following steps of:
step S101: and forming a preset pattern of optical waveguide on the front surface of the semiconductor epitaxial wafer.
Optionally, the semiconductor epitaxial wafer can be made of InP, GaAs, GaN, GaSb, GaP, InN, InAs series III-V materials, Si, Ge, SiC series materials, ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, HgSe, HgTe series II-VI materials. Specifically, the semiconductor epitaxial wafer may include a lower contact layer, a lower transition layer, an active layer, an upper transition layer, and an upper contact layer, which are epitaxially grown in this order on a substrate. Wherein the substrate may be a p-type semi-doped semiconductor substrate material. The lower contact layer and the lower transition layer may comprise p-type materials, and the upper contact layer and the upper transition layer may comprise n-type materials. The active layer may be a double heterojunction, single quantum well, multiple quantum well, superlattice, quantum wire, quantum dot structure. Alternatively, the active layer may include an active layer, a quantum well layer, and an active layer that are stacked.
In one embodiment, the optical waveguide structure can be obtained by etching part of the upper contact layer and the upper transition layer by using a photolithography process. Specifically, a mask layer can be deposited on the front surface of the semiconductor epitaxial wafer; photoetching the mask layer to obtain a preset pattern; and etching or corroding the mask layer according to the preset pattern to obtain the optical waveguide with the preset pattern.
Alternatively, the optical waveguide may be a ridge waveguide structure or a buried waveguide structure; the optical waveguide can be vertical to the light-emitting end face and can also be inclined at a certain angle with the end face; the optical waveguide is in the shape of a straight waveguide, a curved waveguide or a wedge waveguide, or the combination of the straight waveguide and the curved waveguide, the straight waveguide and the wedge waveguide, or the combination of the straight waveguide, the curved waveguide and the wedge waveguide.
Step S102: forming electric isolation in a first area on the front surface of the semiconductor epitaxial wafer to obtain an absorption area; alternatively, the absorption region may be electrically isolated using a proton implantation or diffusion process. The injected or diffused material can be selected from He, Si, Fe, B, Ti and the like. Specifically, the absorption region may be formed in a middle region of the semiconductor epitaxial wafer, and after the optical waveguide is formed, proton implantation or diffusion may be performed in a middle portion of the front surface of the semiconductor epitaxial wafer, so that the implanted or diffused material enters the inside of the semiconductor epitaxial wafer, thereby achieving electrical isolation of regions on both sides of the absorption region.
Step S103: forming a first electrode in a second area and a third area on the front surface of the semiconductor epitaxial wafer, wherein the second area is positioned on one side of the absorption area, and the second area is positioned on the other side of the absorption area or in the absorption area; alternatively, when the first electrode is formed, a passivation layer may be formed on the front surface of the semiconductor epitaxial wafer; forming electrode openings in the second and third regions of the passivation layer; the first electrode is formed in the electrode opening by photolithography, metal deposition, lift-off, or the like.
Step S104: and forming a second electrode on the back surface of the semiconductor epitaxial wafer to obtain the diode of the integrated backlight detector.
Specifically, through the diode of the integrated backlight detector formed in steps S101 to S104, an absorption region for electrical isolation is formed through an implantation or diffusion process, and when the second region is located at one side of the absorption region and the third region is located at the other side of the absorption region, regions respectively including the first electrodes at both sides of the absorption region may be respectively applied with opposite biases to form a light emitting region and a detection region (photosensitive region) of the diode. Meanwhile, the optical waveguide formed on the front surface of the semiconductor epitaxial wafer can penetrate through the light emitting region, the absorption region and the detection region to form an optical limiting structure, so that the optical gain of the light emitting region is improved; and moreover, the backlight received by the detection area is concentrated, and the sensitivity is improved. Meanwhile, when the diode of the integrated backlight detector is applied, the light emitting area can emit light in a forward bias mode, and the detection area absorbs backlight in a reverse bias mode to realize photoelectric conversion.
As an alternative to the embodiment of the present invention, the specific positions of the second region and the third region may also be that the second region is located on one side of the absorption region, and the third region is located inside the absorption region, so that after the first electrode is formed in the second region and the third region, the region located on one side of the absorption region is forward biased to form the light emitting region, and the electrode region located inside the absorption region is reverse biased to form the light sensitive region, so that the structure of light emitting region-absorption region-light sensitive region-absorption region can be formed. Further, when the third region includes a plurality of regions, a structure in which a light emitting region-an absorbing region-a plurality of photosensitive regions and absorbing regions alternate may also be formed, that is, the photosensitive regions and the absorbing regions may be two regions independent of each other, or the photosensitive regions may be contained inside the absorbing regions.
According to the method for manufacturing the diode of the integrated backlight detector, the optical waveguide structure is formed on the semiconductor epitaxial wafer, and the absorption region is formed in the electric isolation mode, so that the light emitting region and the detection region can be formed in the regions on two sides of the absorption region, the light emitting diode and the photoelectric detector can be formed on the same epitaxial wafer, and the light emitting power of the device can be monitored and controlled. Meanwhile, the semiconductor epitaxial wafer only has one active region structural layer, and the light emitting diode and the detector can respectively realize light emitting and photoelectric conversion by using the active region structural layer.
According to the preparation method of the diode of the integrated backlight detector provided by the embodiment of the invention, the formed optical waveguide penetrates through three sections of the light emitting area, the absorption area and the photosensitive area, and the optical waveguides of the light emitting diode and the photoelectric detector are continuous and have no cross section, so that backlight can enter the detector more intensively, and the detection sensitivity is improved. Meanwhile, the detector material does not need to be extended again, the manufacturing process is simple, the detection efficiency is high, and the monitoring cost of the luminous power of the super-radiation light-emitting diode can be effectively reduced.
In one embodiment, the optical waveguide may penetrate the entire detection region, or may extend into the detection region but not penetrate the detection region, or may not enter the detection region, and when the optical waveguide covers the detection region, an optical confinement structure may be formed to improve the optical gain of the light emitting region; and the waveguide can enable the backlight received by the detection area to be concentrated, and the sensitivity is improved.
As an optional implementation manner of the embodiment of the present invention, the method for manufacturing a diode of an integrated backlight detector further includes: and forming antireflection films on the light-emitting end face and the backlight end face of the diode. Namely, antireflection films are respectively arranged at the front end of the formed light emitting area and the tail end of the formed detection area, so that the light transmittance can be increased, the F-P oscillation can be inhibited, and the wide-spectrum output of the light emitting diode can be ensured. In addition, the backlight end face of the detection area can be a natural cleavage face or an inclined face ground to a certain angle.
As an optional implementation manner of the embodiment of the present invention, as shown in fig. 2, the method for manufacturing a diode of an integrated backlight detector provided in the embodiment of the present invention may be implemented according to the following steps:
step S201: a p-type contact layer 11 and a p-type transition layer 12 are epitaxial on a p-type semi-doped semiconductor substrate material 10.
Step S202: an i-type active region layer 13, a quantum well layer 14 and an i-type active layer 15 are epitaxially grown on the p-type transition layer 12.
Step S203: an n-type transition layer 16 and an n-type contact layer 18 are epitaxially grown on the i-type active layer 15, thereby completing epitaxial wafer growth.
Step S204: and depositing a mask layer on the epitaxial wafer, photoetching a waveguide pattern, etching or etching the mask layer, and then etching or etching the n-type contact layer 18 and the n-type transition layer 16 to form the ridge waveguide.
Step S205: an absorption region for electrical isolation is formed in a first region of the front surface of the epitaxial wafer by implantation or diffusion, wherein the first region may be located in a middle region of the front surface of the epitaxial wafer.
Step S206: depositing SiO on the front surface of the epitaxial wafer2Or SiNx A passivation layer 17.
Step S207: the second and third regions of the passivation layer 17 are etched after photolithography to form electrode openings.
Step S208: the n-type metal electrode 19 is fabricated in the electrode opening by photolithography, metal deposition, lift-off, and the like.
Step S209: and depositing a p-type metal electrode 9 on the back surface of the substrate after the substrate 10 is thinned. The structure after the above steps S201 to S209 is shown in fig. 3.
Step S210: and respectively plating antireflection films on the light-emitting end face and the backlight end face to finish the manufacture of the diode of the integrated backlight detector.
The structure after the above steps S201 to S210 is shown in fig. 4. A top view of a diode obtained by the method for manufacturing a diode for an integrated backlight detector is given in fig. 4. The first region 1 forms an absorption region for electrical isolation by implantation or diffusion process, and the implantation or diffusion depth may be any depth, which is not limited in the present invention as long as the electrical isolation effect can be achieved. The waveguide 6 on the front surface of the epitaxial wafer penetrates through the three regions to form an optical limiting structure, so that the optical gain of the light emitting region 2 is improved; and the waveguide can make the backlight received by the detection area 3 more concentrated, thereby improving the sensitivity. The front end of the light emitting region 2 and the tail end of the detection region 3 are respectively coated with antireflection films 8 and 5, so that the light transmittance can be increased, F-P oscillation can be inhibited, and the wide-spectrum output of the superradiant tube can be ensured. And 7 and 4 are metal electrodes of a light emitting region 2 and a detection region 3 respectively, the light emitting region 2 emits light in a forward bias mode, and the photosensitive region 3 absorbs backlight in a reverse bias mode to realize photoelectric conversion. Specifically, since the first electrode formed on the front surface of the epitaxial wafer has a small area, forward bias of the light emitting region 2 and reverse bias of the light sensitive region 3 can be achieved by means of electrode extraction.
An embodiment of the present invention further provides a diode integrated with a backlight detector, as shown in fig. 5, the diode includes: a semiconductor epitaxial wafer 20, wherein the front surface of the semiconductor epitaxial wafer 20 is provided with an optical waveguide structure 6, and a first region 1 of the semiconductor epitaxial wafer 20 comprises an absorption region for electrical isolation; the first electrode 7 is arranged in the second region 2 and the third region 3 on the front surface of the semiconductor epitaxial wafer, the second region 2 is positioned on one side of the absorption region 1, and the third region 3 is positioned on the other side of the absorption region 1 or in the absorption region 1; and a second electrode 21 provided on the back surface of the semiconductor epitaxial wafer 20.
It should be noted that fig. 5 shows a structure in which the second region 2 is located on one side of the absorbent region 1, and the second region 3 is located on the other side of the absorbent region 1.
Specifically, in the diode of the integrated backlight detector provided by the embodiment of the present invention, the absorption region for electrical isolation is formed through an implantation or diffusion process, and when the second region is located on one side of the absorption region and the third region is located on the other side of the absorption region, the regions on both sides of the absorption region respectively containing the first electrode may be respectively applied with opposite bias voltages to form the light emitting region and the detection region (photosensitive region) of the diode. Meanwhile, the optical waveguide formed on the front surface of the semiconductor epitaxial wafer can penetrate through the light emitting region, the absorption region and the detection region to form an optical limiting structure, so that the optical gain of the light emitting region is improved; and the waveguide can enable the backlight received by the detection area to be concentrated, and the sensitivity is improved. Meanwhile, when the diode of the integrated backlight detector is applied, the light emitting area can emit light in a forward bias mode, and the detection area absorbs backlight in a reverse bias mode to realize photoelectric conversion.
As an alternative to the embodiment of the present invention, the specific positions of the second region and the third region may also be that the second region is located on one side of the absorption region, and the third region is located inside the absorption region, so that after the first electrode is formed in the second region and the third region, the region located on one side of the absorption region is forward biased to form the light emitting region, and the electrode region located inside the absorption region is reverse biased to form the light sensitive region, so that the structure of light emitting region-absorption region-light sensitive region-absorption region can be formed. Further, when the third region includes a plurality of regions, a structure in which a light emitting region-an absorbing region-a plurality of photosensitive regions and absorbing regions alternate may also be formed, that is, the photosensitive regions and the absorbing regions may be two regions independent of each other, or the photosensitive regions may be contained inside the absorbing regions.
According to the diode of the integrated backlight detector provided by the embodiment of the invention, the light waveguide structure is formed on the semiconductor epitaxial wafer, and the absorption region is formed in an electric isolation mode, so that the light emitting region and the detection region can be formed in the regions at two sides of the absorption region, and therefore, the light emitting diode and the photoelectric detector can be formed on the same epitaxial wafer, and the light emitting power of the device can be monitored and controlled. Meanwhile, the semiconductor epitaxial wafer only has one active region structural layer, and the light emitting diode and the detector can respectively realize light emitting and photoelectric conversion by using the active region structural layer.
The diode of the integrated backlight detector provided by the embodiment of the invention can enable the formed optical waveguide to penetrate through three sections of areas, namely the light emitting area, the absorption area and the photosensitive area, and the optical waveguides of the light emitting diode and the photoelectric detector are continuous and have no cross section, so that backlight can enter the detector more intensively, and the detection sensitivity is improved. Meanwhile, the diode does not need to be extended with detector materials again, the manufacturing process is simple, the detection efficiency is high, and the monitoring cost of the luminous power of the super-radiation light-emitting diode can be effectively reduced.
As an optional implementation manner of the embodiment of the present invention, the diode of the integrated backlight detector further includes: a passivation layer disposed on the front surface of the semiconductor epitaxial wafer, the second and third regions of the passivation layer including electrode openings, the first electrode disposed in the electrode openingsIn (1). Specifically, the passivation layer can be SiO2Or SiNxA material.
As an alternative implementation manner of the embodiment of the present invention, as shown in fig. 5, the diode of the integrated backlight detector further includes: and the antireflection film is arranged on the light-emitting end face and the backlight end face of the diode. Namely, antireflection films 8 and 5 are respectively arranged at the front end of the formed light emitting area and the tail end of the formed detection area, so that the light transmittance can be increased, F-P oscillation can be inhibited, and the wide-spectrum output of the light emitting diode can be ensured. In addition, the backlight end face of the detection area can be a natural cleavage face or an inclined face ground to a certain angle.
Alternatively, the optical waveguide may be a ridge waveguide structure or a buried waveguide structure; the optical waveguide can be vertical to the light-emitting end face and can also be inclined at a certain angle with the end face; the optical waveguide is in the shape of a straight waveguide, a curved waveguide or a wedge waveguide, or the combination of the straight waveguide and the curved waveguide, the straight waveguide and the wedge waveguide, or the combination of the straight waveguide, the curved waveguide and the wedge waveguide.
Although the present invention has been described in detail with respect to the exemplary embodiments and the advantages thereof, those skilled in the art will appreciate that various changes, substitutions and alterations can be made to the embodiments without departing from the spirit and scope of the invention as defined by the appended claims. For other examples, one of ordinary skill in the art will readily appreciate that the order of the process steps may be varied while maintaining the scope of the present invention.
Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure of the present invention, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present invention. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps.
Claims (10)
1. A preparation method of a diode of an integrated backlight detector is characterized by comprising the following steps:
forming an optical waveguide with a preset pattern on the front surface of the semiconductor epitaxial wafer;
forming electric isolation in a first area on the front surface of the semiconductor epitaxial wafer to obtain an absorption area;
forming a first electrode in a second area and a third area on the front surface of the semiconductor epitaxial wafer, wherein the second area is positioned on one side of the absorption area, and the third area is positioned on the other side of the absorption area or in the absorption area;
and forming a second electrode on the back surface of the semiconductor epitaxial wafer to obtain the diode of the integrated backlight detector.
2. The method for preparing a diode of an integrated backlight detector as claimed in claim 1, wherein before forming the optical waveguide with a predetermined pattern on the front surface of the semiconductor epitaxial wafer, the method comprises:
selecting a substrate;
and sequentially growing a lower contact layer, a lower transition layer, an active layer, an upper transition layer and an upper contact layer on the substrate to form the semiconductor epitaxial wafer.
3. The method for preparing a diode of an integrated backlight detector as claimed in claim 1, wherein the step of forming the optical waveguide with a predetermined pattern on the front surface of the semiconductor epitaxial wafer comprises:
depositing a mask layer on the front surface of the semiconductor epitaxial wafer;
photoetching the mask layer to obtain a preset pattern;
and etching the mask layer according to the preset pattern to obtain the optical waveguide with the preset pattern.
4. The method of claim 1, wherein forming an electrical isolation in the first region of the front side of the semiconductor epitaxial wafer to obtain an absorption region comprises:
and forming electric isolation in the first area of the front surface of the semiconductor epitaxial wafer by adopting a proton implantation or diffusion process to obtain an absorption area.
5. The method for preparing a diode of an integrated backlight detector as claimed in claim 1, wherein forming the first electrode on the second region and the third region of the front surface of the semiconductor epitaxial wafer comprises:
forming a passivation layer on the front surface of the semiconductor epitaxial wafer;
forming electrode openings in the second and third regions of the passivation layer;
a first electrode is formed in the electrode opening.
6. The method for preparing a diode of an integrated backlight detector according to claim 1, further comprising: and forming antireflection films on the light-emitting end face and the backlight end face of the diode.
7. A diode integrated backlight detector, comprising:
a semiconductor epitaxial wafer, the front surface of which has an optical waveguide structure, the first region of which contains an absorption region for electrical isolation;
the first electrode is arranged in a second area and a third area on the front surface of the semiconductor epitaxial wafer, the second area is positioned on one side of the absorption area, and the third area is positioned on the other side of the absorption area or in the absorption area;
and the second electrode is arranged on the back surface of the semiconductor epitaxial wafer.
8. The diode of the integrated backlight detector of claim 7, further comprising:
and the passivation layer is arranged on the front surface of the semiconductor epitaxial wafer, the second region and the third region of the passivation layer comprise electrode openings, and the first electrode is arranged in the electrode openings.
9. The diode of the integrated backlight detector of claim 7, further comprising:
and the antireflection film is arranged on the light-emitting end face and the backlight end face of the diode.
10. The diode of claim 7, wherein the optical waveguide structure is one or more of a straight waveguide structure, a curved waveguide structure, or a tapered waveguide structure.
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| CN202010060361.0A CN111244750B (en) | 2020-01-19 | 2020-01-19 | Diode of integrated backlight detector and preparation method thereof |
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| CN111244750B CN111244750B (en) | 2021-12-21 |
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| CN113224643A (en) * | 2021-05-08 | 2021-08-06 | 中国电子科技集团公司第四十四研究所 | Super-radiation light-emitting diode chip of integrated backlight detector and preparation method |
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| CN117420479A (en) * | 2023-12-19 | 2024-01-19 | 成都光创联科技有限公司 | Negative bias current testing circuit for backlight detector of common-negative optical device |
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