CN103456829A - Monolithic integration PON (passive optical network) ONU (optical network unit) end optical transceiving chip and manufacturing method thereof - Google Patents

Monolithic integration PON (passive optical network) ONU (optical network unit) end optical transceiving chip and manufacturing method thereof Download PDF

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Publication number
CN103456829A
CN103456829A CN2012101736704A CN201210173670A CN103456829A CN 103456829 A CN103456829 A CN 103456829A CN 2012101736704 A CN2012101736704 A CN 2012101736704A CN 201210173670 A CN201210173670 A CN 201210173670A CN 103456829 A CN103456829 A CN 103456829A
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layer
chip
waveguide
type
optical
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CN103456829B (en
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汪洋
汪波涛
李明维
王东山
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State Grid Corp of China SGCC
State Grid Electric Power Research Institute
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State Grid Corp of China SGCC
State Grid Electric Power Research Institute
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Priority to PCT/CN2013/074774 priority patent/WO2013177997A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention provides a monolithic integration PON (passive optical network) ONU (optical network unit) end optical transceiving chip and a manufacturing method thereof. The chip comprises an optical waveguide and an optical device manufactured in the waveguide. The method includes the steps of firstly, extending waveguide materials for one time to form a stacked structure of gain materials and absorbing materials; secondly, selecting regional corrosion top materials, and manufacturing Bragg gratings in filter areas to form waveguide core layers of different devices; thirdly, extending cover materials for two times to form a p-i-n structure; fourthly, etching a ridge waveguide until the corrosion stop layer; fifthly, manufacturing positive and negative electrodes of active devices; wherein different devices in the second step includes a laser, a filter, a power detector and a signal detector. By the monolithic integration PON ONU end optical transceiving chip and the manufacturing method thereof, separated optical transmitting devices and optical receiving devices are integrated in one chip, and accordingly an optical transceiving module is further miniaturized, and encapsulation cost is lowered.

Description

The integrated PON network of a kind of monolithic ONU end light transceiving chip and preparation method thereof
Technical field
The invention belongs to semiconductor device and manufacture field, be specifically related to the integrated PON network of a kind of monolithic ONU end light transceiving chip and preparation method thereof.
Background technology
EPON (PON) refers to a kind of light access technology and corresponding system of point-to-multipoint, its system is comprised of optical line terminal (OLT), Optical Distribution Network (ODN), optical network unit (ONU) three parts, ODN only comprises passive device or equipment, does not comprise active device or equipment.The function that the optical transceiver module of PON network ONU end will be realized sending uplink optical signal and receive downlink optical signal, be comprised of single fiber bi-directional optics assembly (BOSA) and control/drive circuit.Existing BOSA adopts the mode of discrete device Space Coupling to form, and active device comprises light emission and light receiving element, and the service band of optical transmitting component is 1260nm-1360nm, is generally FP laser or the Distributed Feedback Laser chip of TO encapsulation; The service band of light receiving element is 1480nm-1500nm, is generally PIN detector or the APD detector chip of TO encapsulation.Fig. 1 is the structural representation of the optical transceiver module (Optical Transceiver) of employing prior art, semiconductor laser (LD) is encapsulated in a TO shell jointly with laser power detector (MPD), upstream data is converted to light signal from the signal of telecommunication, film filtering slice (TFF) is crossed in transmission, through Lens Coupling, enters optical fiber; Signal sensor (PD) is encapsulated in another TO shell jointly with trans-impedance amplifier (TIA), the downlink optical signal received from optical fiber is entered this TO shell by the TFF reflection, by PD, is absorbed after being converted to current signal and is converted to voltage signal and amplifies by TIA.
Adopt the BOSA assembly of prior art, comprise two orthogonal TO shells in position, a composition such as TFF filter plate, its volume is larger, is difficult to continue miniaturization, and the assembly cost is higher; Need to aim at uplink and downlink two-way light, the coupling cost is higher.
Summary of the invention
For overcoming above-mentioned defect, the invention provides the integrated PON network of a kind of monolithic ONU end light transceiving chip and preparation method thereof, solve the problem that single-fiber bidirectional optical transmitting-receiving subassembly volume is large, the coupling package cost is high that in prior art, discrete optical device forms.
For achieving the above object, the invention provides the integrated PON network of a kind of monolithic ONU end light transceiving chip, its improvements are, described chip comprises fiber waveguide and is produced on optical device wherein.
In optimal technical scheme provided by the invention, described fiber waveguide is strip optical waveguide.
In the second optimal technical scheme provided by the invention, described optical device comprises laser, filter, power detector and the signal sensor be arranged in order along described fiber waveguide.
In the 3rd optimal technical scheme provided by the invention, described laser, under current signal drives, the emission uplink optical signal, up wave band comprises 1260nm-1360nm; Filter, reflect the light of up wave band the light of transmission downstream band; Power detector, the light of the up wave band of absorption transmission filter ripple device, be converted to current signal for monitoring the average light power of laser; Signal sensor, absorb downlink optical signal, and downstream band comprises 1480nm-1500nm.
In the 4th optimal technical scheme provided by the invention, at the fiber waveguide port of laser one end, be the light input/output port mouth; Described light input/output port mouth sends uplink optical signal, and is coupled into the downlink optical signal of fiber waveguide.
In the 5th optimal technical scheme provided by the invention, provide the manufacture method of the integrated PON network of a kind of monolithic ONU end light transceiving chip, its improvements are, described method comprises the steps:
(1). extension waveguide material once forms the stepped construction of gain material and absorbing material;
(2). select the zonal corrosion quilting material, and make Bragg grating (1) in filter region, form the waveguide core layer of different components;
(3). the secondary epitaxy cover material forms the p-i-n structure;
(4). etch ridge waveguide, until etch stop layer;
(5). make the positive and negative electrode of active device;
Different components described in step 2 comprises: laser, filter, power detector and signal sensor.
In the 6th optimal technical scheme provided by the invention, in described step 1, the band gap wavelength of gain material is 1.3 microns; The band gap wavelength of absorbing material is 1.5 microns.
In the 7th optimal technical scheme provided by the invention, described step 1 comprises: on N-shaped InP Semiconductor substrate, by metal oxide chemical vapor deposition (MOCVD) method growing n-type InP resilient coating (6) successively, i type lower limit layer (5), i type multiple quantum well layer (4), i type upper limiting layer (3) and i type InGaAs absorbed layer (2); Wherein, described i type lower limit layer and described i type upper limiting layer adopt InGaAsP or the AlGaInAs quaternary compound semiconductor of band gap wavelength between InP substrate (7) band gap and excitation wavelength.
In the 8th optimal technical scheme provided by the invention, described i type multiple quantum well layer is obtained by quantum well and base alternating growth, and trap and base adopt InGaAsP or AlGaInAs material to manufacture; The gain peak wavelength of described i type multiple quantum well layer is 1.3 microns.
In the 9th optimal technical scheme provided by the invention, in described step 2, the top layer i type InGaAs absorbed layer in laser, filter, power detector zone is eroded, again the i type upper limiting layer of filter region and i type multiple quantum well layer are eroded, on the i of filter region type lower limit layer, make Bragg-grating structure.
In the tenth optimal technical scheme provided by the invention, Bragg-grating structure is made by electron beam exposure or holographic exposure.
In more preferably technical scheme provided by the invention, in described step 3, by the MOCVD method, extension i type InP grating buried layer (9), i type InGaAsP etch stop layer, p-type InP cap rock (8) and p-type InGaAs contact layer (10) successively.
Provided by the invention second more preferably in technical scheme, in described step 4, photoetching forms bar shaped mask protection layer, by wet etching, use different corrosive liquids to remove successively p-type InGaAs contact layer and the p-type InP cap rock of bar shaped mask both sides, utilize the Etching effect of InP corrosive liquid to control the degree of depth arrival etch stop layer corroded; The ridge structure refractive index formed along the bar shaped mask corrosion, higher than the both sides air, forms ridge optical waveguide.
The provided by the invention the 3rd more preferably in technical scheme, and the width of described bar shaped mask protection layer is 3 microns.
The provided by the invention the 4th more preferably in technical scheme, and in described step 5, described active device comprises laser, power detector and signal sensor; Described step 5 comprises the steps:
(5-1). the p-type InGaAs contact layer of corrosion top layer above the waveguide above the waveguide of filter section, between power detector district and signal sensor, and etch isolation channel (14) downwards or carry out Implantation;
(5-2) at chip surface deposition one deck SiO 2perhaps SiN xdielectric insulating film (15), and the deielectric-coating of laser, power detector and signal sensor zone ridge waveguide top layer is eroded, expose p-type InGaAs contact layer;
(5-3). at chip surface sputtered with Ti/Au metal p electrode layer, and erode away the figure of the p electrode (11,12,13) of laser, power detector and signal sensor;
(5-4). the attenuate substrate, evaporation Au/Ge/Ni alloy annealing on the chip back substrate, more overleaf on substrate evaporation Cr/Au form public n electrode (16).
Compared with the prior art, the integrated PON network of a kind of monolithic provided by the invention ONU end light transceiving chip and preparation method thereof, the single-fiber bidirectional optical transmitting-receiving subassembly volume formed for existing discrete optical device is large, coupling package high in cost of production problem, discrete light emitting devices and light receiving element are integrated in a chip, can make the further miniaturization of optical transceiver module, reduce packaging cost; And upward signal and downstream signal have a public input/output port in integrated chip, reduce the coupling cost.
The accompanying drawing explanation
The optical transceiver module structural representation that Fig. 1 is prior art.
The example structure schematic diagram that Fig. 2 is the integrated PON network of monolithic ONU end light transceiving chip.
The implementation Process illustration intention of the manufacture method step 1 that Fig. 3 is the integrated PON network of monolithic ONU end light transceiving chip.
The implementation Process illustration intention of the manufacture method step 2 that Fig. 4 is the integrated PON network of monolithic ONU end light transceiving chip.
The implementation Process illustration intention of the manufacture method step 3 that Fig. 5 is the integrated PON network of monolithic ONU end light transceiving chip.
The implementation Process illustration intention of the manufacture method step 4 that Fig. 6 is the integrated PON network of monolithic ONU end light transceiving chip.
The implementation Process illustration intention of the manufacture method step 5 that Fig. 7 is the integrated PON network of monolithic ONU end light transceiving chip.
Embodiment
The present invention proposes the technical scheme of monolithic integrating optical transmit-receive chip, the receiving chip of the transmitting chip of uplink optical signal and downlink optical signal is integrated in same chip, realize optical coupling and light filtering in chip, only need single TO encapsulating package, reduce the BOSA assembly volume, reduce the assembly cost; Upward signal and downstream signal have a public input/output port in integrated chip, reduce the coupling cost.
The single-fiber bidirectional optical transmitting-receiving subassembly volume that the present invention is directed to discrete optical device composition is large, coupling package high in cost of production problem, monolithic integrating optical transmit-receive chip and preparation method thereof has been proposed, discrete light emitting devices and light receiving element are integrated in a chip, make the reduction of the further miniaturization of optical transceiver module and packaging cost become possibility.
Monolithic integrating optical transmit-receive chip of the present invention comprises: laser (LD), filter, power detector (MPD), signal sensor (PD), fiber waveguide, light input/output port mouth.Its structural representation as shown in Figure 2.
Laser, under current signal drives, the emission uplink optical signal, up wave band is 1260nm-1360nm.
Filter, passive device, reflect the light of most of up wave band, the light of transmission downstream band.
Power detector, absorb the light of the up wave band of fraction of transmission filter ripple device fully, is converted to current signal for monitoring the average light power of laser.
Signal sensor, absorb downlink optical signal, and downstream band is 1480nm-1500nm.
Fiber waveguide, in chip, all light signals are limited in same strip optical waveguide, common for laser, filter, power detector and signal sensor, and, in strip optical waveguide, laser, filter, power detector and signal sensor are arranged in order.
The light input/output port mouth, be public light input/output port mouth at the fiber waveguide port of laser one end, and uplink optical signal sends from this port, and downlink optical signal is coupled into fiber waveguide by this port.
Referring to Fig. 3-7, the manufacture method of monolithic integrating optical transmit-receive chip comprises the following steps:
Step 1, an extension waveguide material, form the approximately about stepped construction of absorbing material of 1.5 microns of the gain material of 1.3 microns and band gap wavelength of band gap wavelength.
On N-shaped InP Semiconductor substrate, by near metal oxide chemical vapor deposition (being called for short MOCVD) method growing n-type InP resilient coating (6), i type lower limit layer (5), i type gain peak multiple quantum well layer (4), i type upper limiting layer (3), the i type InGaAs absorbed layer (2) 1.3 microns successively.Wherein, lower limit layer and upper limiting layer adopt InGaAsP or the AlGaInAs quaternary compound semiconductor of band gap wavelength between InP substrate (7) band gap and excitation wavelength; Multiple quantum well layer is obtained with building alternating growth by quantum well, and trap is InGaAsP or the AlGaInAs material that component is different with barrier material.
Step 2, selection zonal corrosion quilting material, and make Bragg grating in filter region, form the waveguide core layer of different components.
The top layer InGaAs absorbed layer in laser, filter, power detector zone is eroded, again the upper limiting layer of filter region and multiple quantum well layer are eroded, make Bragg-grating structure (1) by electron beam exposure or holographic exposure on the lower limit layer of filter region, the wavelength of grating cycle by its reflection determines.
Step 3, secondary epitaxy cover material, form the p-i-n structure.
By the MOCVD method, extension i type InP grating buried layer (9), i type InGaAsP etch stop layer, p-type InP cap rock (8) and p-type InGaAs contact layer (10) successively.
Step 4, etch ridge waveguide, until etch stop layer.
Photoetching forms the bar shaped mask protection layer of 3 microns left and right; remove successively p-type InGaAs contact layer, the p-type InP cap rock of bar shaped mask both sides by wet etching (wet etching) with different corrosive liquids, utilize the Etching effect of InP corrosive liquid to control the degree of depth arrival etch stop layer corroded.The ridge structure refractive index formed along the bar shaped mask corrosion, higher than the both sides air, is ridge optical waveguide.
The positive and negative electrode of step 5, making active device (laser, power detector, signal sensor).
The p-type InGaAs contact layer of corrosion top layer above the waveguide above the waveguide of filter section, between power detector district and signal sensor, and etch isolation channel (14) downwards or Implantation improves the electricity isolation between active device.
At chip surface deposition one deck SiO 2perhaps SiN xdielectric insulating film (15), and the deielectric-coating of laser, power detector and signal sensor zone ridge waveguide top layer is eroded, expose p-type InGaAs contact layer.
At chip surface sputtered with Ti/Au metal p electrode layer, and erode away the figure of the p electrode (11,12,13) of laser, power detector and signal sensor.
The attenuate substrate, evaporation Au/Ge/Ni alloy annealing on the chip back substrate, more overleaf on substrate evaporation Cr/Au form public n electrode (16).
Need statement, content of the present invention and embodiment are intended to prove the practical application of technical scheme provided by the present invention, should not be construed as limiting the scope of the present invention.Those skilled in the art inspired by the spirit and principles of the present invention, can do various modifications, be equal to and replace or improve.But in the protection range that these changes or modification are all awaited the reply in application.

Claims (15)

1. the integrated PON network of a monolithic ONU end light transceiving chip, is characterized in that, described chip comprises fiber waveguide and is produced on optical device wherein.
2. chip according to claim 1, is characterized in that, described fiber waveguide is strip optical waveguide.
3. chip according to claim 1, is characterized in that, described optical device comprises laser, filter, power detector and the signal sensor be arranged in order along described fiber waveguide.
4. according to the described chip of claim 1-3 any one, it is characterized in that, described laser, under current signal drives, the emission uplink optical signal, up wave band comprises 1260nm-1360nm; Filter, reflect the light of up wave band the light of transmission downstream band; Power detector, the light of the up wave band of absorption transmission filter ripple device, be converted to current signal for monitoring the average light power of laser; Signal sensor, absorb downlink optical signal, and downstream band comprises 1480nm-1500nm.
5. chip according to claim 4, is characterized in that, at the fiber waveguide port of laser one end, is the light input/output port mouth; Described light input/output port mouth sends uplink optical signal, and is coupled into the downlink optical signal of fiber waveguide.
6. the manufacture method of the integrated PON network of a monolithic ONU end light transceiving chip, is characterized in that, described method comprises the steps:
(1). extension waveguide material once forms the stepped construction of gain material and absorbing material;
(2). select the zonal corrosion quilting material, and make Bragg grating (1) in filter region, form the waveguide core layer of different components;
(3). the secondary epitaxy cover material forms the p-i-n structure;
(4). etch ridge waveguide, until etch stop layer;
(5). make the positive and negative electrode of active device;
Different components described in step 2 comprises: laser, filter, power detector and signal sensor.
7. manufacturing method of chip according to claim 6, is characterized in that, in described step 1, the band gap wavelength of gain material is 1.3 microns; The band gap wavelength of absorbing material is 1.5 microns.
8. manufacturing method of chip according to claim 7, it is characterized in that, described step 1 comprises: on N-shaped InP Semiconductor substrate, by metal oxide chemical vapor deposition (MOCVD) method growing n-type InP resilient coating (6) successively, i type lower limit layer (5), i type multiple quantum well layer (4), i type upper limiting layer (3) and i type InGaAs absorbed layer (2); Wherein, described i type lower limit layer and described i type upper limiting layer adopt InGaAsP or the AlGaInAs quaternary compound semiconductor of band gap wavelength between InP substrate (7) band gap and excitation wavelength.
9. manufacturing method of chip according to claim 8, is characterized in that, described i type multiple quantum well layer is obtained by quantum well and base alternating growth, and trap and base adopt InGaAsP or AlGaInAs material to manufacture; The gain peak wavelength of described i type multiple quantum well layer is 1.3 microns.
10. according to the described manufacturing method of chip of claim 6-9 any one, it is characterized in that, in described step 2, the top layer i type InGaAs absorbed layer in laser, filter, power detector zone is eroded, again the i type upper limiting layer of filter region and i type multiple quantum well layer are eroded, on the i of filter region type lower limit layer, make Bragg-grating structure.
11. manufacturing method of chip according to claim 10, is characterized in that, Bragg-grating structure is made by electron beam exposure or holographic exposure.
12. according to the described manufacturing method of chip of claim 6-9 any one, it is characterized in that, in described step 3, by the MOCVD method, extension i type InP grating buried layer (9), i type InGaAsP etch stop layer, p-type InP cap rock (8) and p-type InGaAs contact layer (10) successively.
13. according to the described manufacturing method of chip of claim 6-9 any one, it is characterized in that, in described step 4, photoetching forms bar shaped mask protection layer, by wet etching, use different corrosive liquids to remove successively p-type InGaAs contact layer and the p-type InP cap rock of bar shaped mask both sides, utilize the Etching effect of InP corrosive liquid to control the degree of depth arrival etch stop layer corroded; The ridge structure refractive index formed along the bar shaped mask corrosion, higher than the both sides air, forms ridge optical waveguide.
14. manufacturing method of chip according to claim 13, is characterized in that, the width of described bar shaped mask protection layer is 3 microns.
15. according to the described manufacturing method of chip of claim 6-9 any one, it is characterized in that, in described step 5, described active device comprises laser, power detector and signal sensor; Described step 5 comprises the steps:
(5-1). the p-type InGaAs contact layer of corrosion top layer above the waveguide above the waveguide of filter section, between power detector district and signal sensor, and etch isolation channel (14) downwards or carry out Implantation;
(5-2) at chip surface deposition one deck SiO 2perhaps SiN xdielectric insulating film (15), and the deielectric-coating of laser, power detector and signal sensor zone ridge waveguide top layer is eroded, expose p-type InGaAs contact layer;
(5-3). at chip surface sputtered with Ti/Au metal p electrode layer, and erode away the figure of the p electrode (11,12,13) of laser, power detector and signal sensor;
(5-4). the attenuate substrate, evaporation Au/Ge/Ni alloy annealing on the chip back substrate, more overleaf on substrate evaporation Cr/Au form public n electrode (16).
CN201210173670.4A 2012-05-30 2012-05-30 A kind of single-chip integration PON ONU end light transceiving chip and preparation method thereof Active CN103456829B (en)

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PCT/CN2013/074774 WO2013177997A1 (en) 2012-05-30 2013-04-26 Onu-end optical transceiver chip for monolithic integrated pon system and manufacturing method therefor

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CN111244751A (en) * 2020-01-19 2020-06-05 中国科学院半导体研究所 Optical communication transceiving structure integrating laser and photoelectric detector
CN111244750A (en) * 2020-01-19 2020-06-05 全球能源互联网研究院有限公司 Diode of integrated backlight detector and preparation method thereof
CN114639753A (en) * 2022-03-16 2022-06-17 中国科学院半导体研究所 Monolithic integrated optical transceiver chip and preparation method thereof
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CN109459817A (en) * 2018-11-30 2019-03-12 北京邮电大学 The preparation method of monolithic silicon based opto-electronics integrated chip
CN111244751A (en) * 2020-01-19 2020-06-05 中国科学院半导体研究所 Optical communication transceiving structure integrating laser and photoelectric detector
CN111244750A (en) * 2020-01-19 2020-06-05 全球能源互联网研究院有限公司 Diode of integrated backlight detector and preparation method thereof
CN111244751B (en) * 2020-01-19 2021-08-03 中国科学院半导体研究所 Optical communication transceiving structure integrating laser and photoelectric detector
CN111244750B (en) * 2020-01-19 2021-12-21 全球能源互联网研究院有限公司 Diode of integrated backlight detector and preparation method thereof
CN114639753A (en) * 2022-03-16 2022-06-17 中国科学院半导体研究所 Monolithic integrated optical transceiver chip and preparation method thereof
CN114924362A (en) * 2022-07-20 2022-08-19 日照市艾锐光电科技有限公司 Transmitting-receiving bidirectional integrated chip and application thereof in optical bidirectional transmitting-receiving assembly
CN116314169A (en) * 2023-05-23 2023-06-23 之江实验室 Packaging structure of silicon-based integrated light receiving chip
CN116314169B (en) * 2023-05-23 2023-08-11 之江实验室 Packaging structure of silicon-based integrated light receiving chip

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