CN111240391B - Low-power-supply-voltage large-slope temperature sensor circuit - Google Patents
Low-power-supply-voltage large-slope temperature sensor circuit Download PDFInfo
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- CN111240391B CN111240391B CN202010057885.4A CN202010057885A CN111240391B CN 111240391 B CN111240391 B CN 111240391B CN 202010057885 A CN202010057885 A CN 202010057885A CN 111240391 B CN111240391 B CN 111240391B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Abstract
A low power supply voltage large-slope temperature sensor circuit comprises four current sources, two diode series circuits, four NMOS tubes and two resistors, wherein the positive ends of the four current sources are connected with the positive electrode of a power supply; the negative end of the first diode series circuit is grounded, and the positive end of the first diode series circuit is connected with the negative end of the first current source; the positive end of the second diode series circuit is connected with the negative end of a second current source, and the negative end of the second diode series circuit is connected with the drain end of the first NMOS tube and is connected with the negative end of the first current source through a first resistor; the negative end of the third current source is connected with the grid end of the first NMOS tube and the drain end and the grid end of the second NMOS tube; the negative end of a fourth current source is connected with the grid end of the third NMOS tube and the drain end and the grid end of the fourth NMOS tube; one end of the second resistor is connected with the negative end of the second current source, and the other end of the second resistor is connected with the drain end of the third NMOS tube and then serves as the output end of the sensor; the source ends of the four NMOS tubes are grounded. The invention can operate under lower voltage and improve the sensitivity of the sensor.
Description
Technical Field
The invention relates to an integrated temperature sensor circuit with low power supply voltage and high sensitivity (large slope), belonging to the technical field of semiconductor devices.
Background
The temperature sensor can detect the ambient temperature and output a corresponding voltage signal. In electronic systems, temperature sensors are widely used. For example, a temperature sensor is required to detect the ambient temperature in various electronic devices such as computers, mobile phones and tablets. In these electronic products, the temperature sensor is often integrated in a chip. The structure of a common integrated temperature sensor is shown in fig. 1, and the principle of the integrated temperature sensor is to use the negative temperature characteristic of the base-emitter voltage of a triode to realize the measurement of temperature. The linear voltage output by the temperature sensor is:
VT＝VBE
wherein VBEThe base-emitter voltage of the transistor is represented, and the transistor has negative temperature characteristics. Output voltage VTHas negative temperature characteristics, namely, the output voltage value is reduced along with the increase of the temperature. However, this temperature sensor circuit has two disadvantages: firstly, the slope of the output linear voltage along with the temperature change is small, and the sensitivity of the sensor is not high; and secondly, the output linear voltage range is improved by superposing diodes, and higher power supply voltage is required.
Disclosure of Invention
The present invention is directed to provide a temperature sensor circuit with low power voltage and large slope for improving the sensitivity of the sensor and reducing the power voltage of the sensor.
The problem of the invention is realized by the following technical scheme:
a low power supply voltage large-slope temperature sensor circuit comprises four current sources, two diode series circuits, four NMOS tubes and two resistors, wherein the positive ends of the four current sources are connected with the positive electrode of a power supply; the negative end of the first diode series circuit is grounded, and the positive end of the first diode series circuit is connected with the negative end of the first current source; the positive end of the second diode series circuit is connected with the negative end of the second current source, and the negative end of the second diode series circuit is connected with the drain end of the first NMOS tube and is connected with the negative end of the first current source through a first resistor; the negative end of the third current source is connected with the grid end of the first NMOS tube and the drain end and the grid end of the second NMOS tube; the negative end of a fourth current source is connected with the grid end of the third NMOS tube and the drain end and the grid end of the fourth NMOS tube; one end of the second resistor is connected with the negative end of the second current source, and the other end of the second resistor is connected with the drain end of the third NMOS tube and then serves as the output end of the sensor; the source ends of the four NMOS tubes are grounded.
In the low-power-supply-voltage large-slope temperature sensor circuit, the four current sources are PTAT (proportional to absolute temperature) current sources with the same temperature coefficient, and the currents of the first current source, the second current source and the third current source are twice the current of the fourth current source.
In the low power supply voltage large-slope temperature sensor circuit, the width-length ratio and the size of the first NMOS tube and the second NMOS tube are the same; the width-length ratio and the size of the third NMOS tube are the same as those of the fourth NMOS tube.
In the low power voltage large slope temperature sensor circuit, the first diode series circuit comprises three diodes, the positive end of the first diode is connected with the negative end of the first current source, the negative end of the first diode (D1) is connected with the positive end of the second diode, the negative end of the third diode is grounded, and the positive end is connected with the negative end of the second diode.
In the low-power-supply-voltage large-slope temperature sensor circuit, the second diode series circuit comprises a fourth diode and a fifth diode, the positive end of the fourth diode is connected with the negative end of the second current source, the positive end of the fifth diode is connected with the negative end of the fourth diode, and the negative end of the fifth diode (D5) is connected with the drain end of the first NMOS tube and is connected with the negative end of the first current source through the first resistor.
The invention has the following beneficial effects: the invention reasonably improves the temperature sensor circuit, so that the sensor can operate under lower power supply voltage, the slope of the output signal along with the temperature change is larger, the range of the output linear voltage is wider, and the sensitivity of the sensor is effectively improved.
Drawings
FIG. 1 is a schematic diagram of a conventional integrated temperature sensor circuit;
FIG. 2 is a schematic diagram of an integrated temperature sensor circuit according to the present invention;
FIG. 3 is a graph showing the output voltage temperature characteristic of the circuit of the present invention.
The list of labels in the figure is: CS, a PTAT current source, CS 1-CS 4, a first current source-a fourth current source, Q1, a triode, D1-D5, a first diode-a fifth diode, M1-M4, a first NMOS tube-a fourth NMOS tube, R1, a first resistor, R2 and a second resistor.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
The invention provides a low-power-supply-voltage large-slope temperature sensor circuit which solves the technical problems of small slope of a voltage-temperature characteristic curve and small output linear voltage range of the conventional temperature sensor circuit.
Referring to fig. 2, the present invention includes four PTAT current sources (i.e., the first current source CS1 to the fourth current source CS4), five diodes (i.e., the first diode D1 to the fifth diode D5), four NMOS transistors (i.e., the first NMOS transistor M1 to the fourth NMOS transistor M4), a first resistor R1, and a second resistor R2.
The positive ends of the first current source CS 1-the fourth current source CS4 are all connected with the power supply voltage VDD, the negative end of the first current source CS1 is connected with the positive end of a first diode D1, the first diode D1, a second diode D2 and a third diode D3 are connected in series, and the negative end of the third diode D3 is grounded;
the negative end of the second current source CS2 is connected with the positive end of a fourth diode D4, a fourth diode D4 is connected with a fifth diode D5 in series, and the negative end of the fifth diode D5 is connected with one end of a first resistor R1 and the drain end of a first NMOS transistor M1;
the negative end of a third current source CS3 is connected with the drain end and the gate end of the second NMOS tube M2;
the negative end of a fourth current source CS4 is connected with the drain end and the gate end of a fourth NMOS transistor M4;
one end of the first resistor R1 is connected to the positive terminal of the first diode D1, and the other end is connected to the negative terminal of the fifth diode D5 and the drain terminal of the first NMOS transistor M1;
one end of the second resistor R2 is connected with the positive end of the fourth diode D4, and the other end is connected with the drain end of the third NMOS transistor M3;
the source ends of the first NMOS transistor M1, the second NMOS transistor M2, the third NMOS transistor M3 and the fourth NMOS transistor M4 are all grounded, the gate end of the first NMOS transistor M1 is connected with the gate end and the drain end of the second NMOS transistor M2, and the gate end of the third NMOS transistor M3 is connected with the gate end and the drain end of the fourth NMOS transistor M4;
the first to fourth current sources CS1 to CS4 are positive temperature characteristic current sources with the same temperature coefficient, and the first, second, and third PTAT current sources CS1, CS2, and CS3 all have the same current and are twice as large as the fourth PTAT current source CS 4.
The width-to-length ratio and the size setting of the first NMOS transistor M1 and the second NMOS transistor M2 are the same, and the width-to-length ratio and the size setting of the third NMOS transistor M3 and the fourth NMOS transistor M4 are the same.
The negative temperature coefficient voltage V1 at the positive end of the first diode D1 subtracts the positive temperature coefficient voltage at the two ends of the first resistor R1 to obtain a second negative temperature coefficient voltage V2, the negative temperature coefficient voltage at the two ends of the diodes D4 and D5 is added to the V2 to obtain a third negative temperature coefficient voltage V3, the positive temperature coefficient voltage at the two ends of the second resistor R2 is subtracted from the V3 to obtain a fourth negative temperature coefficient voltage, namely the output voltage VOUT, and a larger negative temperature coefficient is obtained.
The negative temperature coefficient voltage V1 at the positive terminal of the first diode D1 is formulated as follows:
V1＝3VBE
wherein VBEThe base-emitter voltage of the transistor is represented, and the transistor has negative temperature characteristics.
The second negative temperature coefficient voltage V2 is formulated as follows:
V2＝3VBE-R1×IPTAT
wherein IPTATThe first resistor R1 is a fixed resistor set to represent a current proportional to temperature.
The third negative temperature coefficient voltage V3 is formulated as follows:
V3＝V2+2VBE＝5VBE-R1×IPTAT
the output voltage VOUT is formulated as follows:
VOUT＝V3-R2×IPTAT＝5VBE-(R1+R2)IPTAT
i of the first current source CS1 to the third current source CS3 is setPTAT4 muA at 27 deg.C, 0.02 muA/deg.C positive temperature characteristic, and I of the fourth current source CS4PTATThe temperature of the output voltage is 2 muA at 27 ℃, the positive temperature characteristic is 0.02 muA/DEG C, the resistance values of the first resistor R1 and the second resistor R2 are both 200K, the sizes of the first NMOS transistor M1 to the fourth NMOS transistor M4 are 10/5 (mu M), the power supply voltage is 4.5V, a simulation diagram shown in figure 3 is obtained through Cadence Spetre simulation, the simulation shows that the negative temperature change slope of the output voltage generated under a standard process corner (tt corner) is 17.2 mV/DEG C in a temperature range from-40 ℃ to 125 ℃, and the output linear voltage range is 0.97V to 3.82V. The circuit has low requirement on normal working power supply voltage, large temperature change slope, large output linear voltage range and high sensor sensitivity.
The foregoing is illustrative of the present invention and is not to be construed as limiting thereof, since various other modifications and combinations will be suggested in the art and are included within the spirit and scope of the invention.
Claims (5)
1. A low power supply voltage large-slope temperature sensor circuit is characterized by comprising four current sources, two diode series circuits, four NMOS tubes and two resistors, wherein the positive ends of the four current sources are connected with the positive electrode of a power supply; the negative end of the first diode series circuit is grounded, and the positive end of the first diode series circuit is connected with the negative end of a first current source (CS 1); the positive end of the second diode series circuit is connected with the negative end of the second current source (CS2), and the negative end of the second diode series circuit is connected with the drain end of the first NMOS tube (M1) and is connected with the negative end of the first current source (CS1) through a first resistor (R1); the negative end of the third current source (CS3) is connected with the gate end of the first NMOS tube (M1) and the drain end and the gate end of the second NMOS tube (M2); the negative end of the fourth current source (CS4) is connected with the gate end of the third NMOS tube (M3) and the drain end and the gate end of the fourth NMOS tube (M4); one end of the second resistor (R2) is connected with the negative end of the second current source (CS2), and the other end of the second resistor (R2) is connected with the drain end of the third NMOS tube (M3) and then serves as the output end of the sensor; the source ends of the four NMOS tubes are grounded.
2. The low supply voltage high slope temperature sensor circuit of claim 1, wherein the four current sources are PTAT current sources with the same temperature coefficient, and the current of the first current source (CS1), the second current source (CS2) and the third current source (CS3) is twice the current of the fourth current source (CS 4).
3. The low supply voltage large slope temperature sensor circuit according to claim 1 or 2, wherein the width-to-length ratio and the size of the first NMOS transistor (M1) and the second NMOS transistor (M2) are the same; the width-length ratio and the size of the third NMOS tube (M3) and the fourth NMOS tube (M4) are the same.
4. The low supply voltage high slope temperature sensor circuit according to claim 3, wherein said first diode series circuit comprises three diodes, the positive terminal of the first diode (D1) is connected to the negative terminal of the first current source (CS1), the negative terminal of the first diode (D1) is connected to the positive terminal of the second diode (D2), the negative terminal of the third diode (D3) is connected to ground, and the positive terminal is connected to the negative terminal of the second diode (D2).
5. The low supply voltage large slope temperature sensor circuit according to claim 4, wherein said second diode series circuit comprises a fourth diode (D4) and a fifth diode (D5), the positive terminal of the fourth diode (D4) is connected to the negative terminal of the second current source (CS2), the positive terminal of the fifth diode (D5) is connected to the negative terminal of the fourth diode (D4), and the negative terminal of the fifth diode (D5) is connected to the drain terminal of the first NMOS transistor (M1) and to the negative terminal of the first current source (CS1) through the first resistor (R1).
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| CN202010057885.4A CN111240391B (en) | 2020-01-16 | 2020-01-16 | Low-power-supply-voltage large-slope temperature sensor circuit |
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| CN111240391B true CN111240391B (en) | 2021-09-07 |
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| JPH0774550A (en) * | 1993-09-01 | 1995-03-17 | Nec Corp | Overheat detection circuit |
| JPH11258065A (en) * | 1998-03-11 | 1999-09-24 | Toko Inc | Temperature detecting circuit |
| CN1488922A (en) * | 2002-08-27 | 2004-04-14 | ������������ʽ���� | Temperature sensing circuit, semiconductor integrated circuit and regulating method thereof |
| CN105980006A (en) * | 2014-02-07 | 2016-09-28 | 波士顿科学神经调制公司 | Temperature sensing circuitry for an implantable medical device |
| CN106055010A (en) * | 2016-06-21 | 2016-10-26 | 南开大学 | Large-slope temperature sensor circuit having repairing and adjustment function |
| CN108664068A (en) * | 2018-05-16 | 2018-10-16 | 电子科技大学 | A kind of fractional expression band-gap reference circuit applied to low supply voltage |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3619659A (en) * | 1969-12-02 | 1971-11-09 | Honeywell Inf Systems | Integrator amplifier circuit with voltage regulation and temperature compensation |
| US6088208A (en) * | 1997-03-31 | 2000-07-11 | Matsushita Electronics Corporation | Electronic device, electronic switching apparatus including the same, and production method thereof |
| JP2005134145A (en) * | 2003-10-28 | 2005-05-26 | Seiko Instruments Inc | Temperature sensor circuit |
| CN202309520U (en) * | 2011-10-24 | 2012-07-04 | 无锡芯朋微电子有限公司 | Power supply circuit capable of converting high voltage of chip enable zero shutdown current into low voltage |
| TWI671617B (en) * | 2018-07-09 | 2019-09-11 | 華邦電子股份有限公司 | Current generating circuits |
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2020
- 2020-01-16 CN CN202010057885.4A patent/CN111240391B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0774550A (en) * | 1993-09-01 | 1995-03-17 | Nec Corp | Overheat detection circuit |
| JPH11258065A (en) * | 1998-03-11 | 1999-09-24 | Toko Inc | Temperature detecting circuit |
| CN1488922A (en) * | 2002-08-27 | 2004-04-14 | ������������ʽ���� | Temperature sensing circuit, semiconductor integrated circuit and regulating method thereof |
| CN105980006A (en) * | 2014-02-07 | 2016-09-28 | 波士顿科学神经调制公司 | Temperature sensing circuitry for an implantable medical device |
| CN106055010A (en) * | 2016-06-21 | 2016-10-26 | 南开大学 | Large-slope temperature sensor circuit having repairing and adjustment function |
| CN108664068A (en) * | 2018-05-16 | 2018-10-16 | 电子科技大学 | A kind of fractional expression band-gap reference circuit applied to low supply voltage |
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