CN111223884A - 一种光电感测器及其制造方法 - Google Patents
一种光电感测器及其制造方法 Download PDFInfo
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- CN111223884A CN111223884A CN202010159895.9A CN202010159895A CN111223884A CN 111223884 A CN111223884 A CN 111223884A CN 202010159895 A CN202010159895 A CN 202010159895A CN 111223884 A CN111223884 A CN 111223884A
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- 229910021332 silicide Inorganic materials 0.000 claims description 8
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- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
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- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202010159895.9A CN111223884B (zh) | 2020-03-10 | 2020-03-10 | 一种光电感测器及其制造方法 |
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CN202010159895.9A CN111223884B (zh) | 2020-03-10 | 2020-03-10 | 一种光电感测器及其制造方法 |
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CN111223884A true CN111223884A (zh) | 2020-06-02 |
CN111223884B CN111223884B (zh) | 2022-08-09 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030038299A1 (en) * | 2001-08-23 | 2003-02-27 | Motorola, Inc. | Semiconductor structure including a compliant substrate having a decoupling layer, device including the compliant substrate, and method to form the structure and device |
CN101996955A (zh) * | 2009-08-19 | 2011-03-30 | 精材科技股份有限公司 | 芯片封装体及其制造方法 |
US20110193210A1 (en) * | 2007-08-08 | 2011-08-11 | Wen-Cheng Chien | Image sensor package with trench insulator and fabrication method thereof |
CN103681537A (zh) * | 2012-09-25 | 2014-03-26 | 精材科技股份有限公司 | 晶片封装体及其形成方法 |
CN104517976A (zh) * | 2013-09-30 | 2015-04-15 | 中芯国际集成电路制造(北京)有限公司 | Cmos图像传感器的像素结构及其形成方法 |
CN110610953A (zh) * | 2019-09-30 | 2019-12-24 | 山东砚鼎电子科技有限公司 | 一种相机感测组件及其制造方法 |
-
2020
- 2020-03-10 CN CN202010159895.9A patent/CN111223884B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030038299A1 (en) * | 2001-08-23 | 2003-02-27 | Motorola, Inc. | Semiconductor structure including a compliant substrate having a decoupling layer, device including the compliant substrate, and method to form the structure and device |
US20110193210A1 (en) * | 2007-08-08 | 2011-08-11 | Wen-Cheng Chien | Image sensor package with trench insulator and fabrication method thereof |
CN101996955A (zh) * | 2009-08-19 | 2011-03-30 | 精材科技股份有限公司 | 芯片封装体及其制造方法 |
CN103681537A (zh) * | 2012-09-25 | 2014-03-26 | 精材科技股份有限公司 | 晶片封装体及其形成方法 |
CN104517976A (zh) * | 2013-09-30 | 2015-04-15 | 中芯国际集成电路制造(北京)有限公司 | Cmos图像传感器的像素结构及其形成方法 |
CN110610953A (zh) * | 2019-09-30 | 2019-12-24 | 山东砚鼎电子科技有限公司 | 一种相机感测组件及其制造方法 |
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