CN111201616B - Optoelectronic device with boron nitride alloy electron blocking layer and method of manufacture - Google Patents
Optoelectronic device with boron nitride alloy electron blocking layer and method of manufacture Download PDFInfo
- Publication number
- CN111201616B CN111201616B CN201880060084.4A CN201880060084A CN111201616B CN 111201616 B CN111201616 B CN 111201616B CN 201880060084 A CN201880060084 A CN 201880060084A CN 111201616 B CN111201616 B CN 111201616B
- Authority
- CN
- China
- Prior art keywords
- layer
- electron blocking
- blocking layer
- boron nitride
- doped contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000000903 blocking effect Effects 0.000 title claims abstract description 151
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 52
- 239000000956 alloy Substances 0.000 title claims abstract description 46
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 46
- 229910052582 BN Inorganic materials 0.000 title claims abstract description 45
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title description 5
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000004888 barrier function Effects 0.000 claims description 56
- 229910002601 GaN Inorganic materials 0.000 claims description 40
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 22
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 238000005215 recombination Methods 0.000 description 9
- 230000006798 recombination Effects 0.000 description 9
- 239000000203 mixture Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- FGUJWQZQKHUJMW-UHFFFAOYSA-N [AlH3].[B] Chemical compound [AlH3].[B] FGUJWQZQKHUJMW-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Led Devices (AREA)
Abstract
An optoelectronic device, comprising: the semiconductor device includes a substrate, a first doped contact layer disposed on the substrate, a multiple quantum well layer disposed on the first doped contact layer, a boron nitride alloy electron blocking layer disposed on the multiple quantum well layer, and a second doped contact layer disposed on the boron nitride alloy electron blocking layer.
Description
Cross Reference to Related Applications
The present application claims priority from U.S. provisional patent application No. 62/559,842 entitled "significant improvement in blue and ultraviolet light emitting diode performance by using boron aluminum nitride electron blocking layers," filed on 2017, 9, 18, the disclosure of which is incorporated herein by reference in its entirety.
Background
Technical Field
Embodiments of the disclosed subject matter generally relate to optoelectronic devices having boron nitride alloy electron blocking layers to improve the efficiency of the optoelectronic devices and methods of fabricating the same.
Background
Due to the higher efficiency of light emitting diodes and the much smaller capacity required to produce light emitting diodes than to produce other types of light emitting devices, light emitting diodes are increasingly being used in place of other light emitting devices (e.g., incandescent or fluorescent light emitting devices). Common problems in light emitting diodes are electron leakage from the active layer and low hole injection, which reduces the efficiency of the device.
One solution to reduce electron leakage from the active layer is to provide an Electron Blocking Layer (EBL) between the topmost quantum barrier and the top contact layer. For example, a blue light emitting diode has been manufactured using an aluminum gallium nitride (AlGaN) electron blocking layer, and has a multiple quantum well layer including a plurality of indium gallium nitride (InGaN) active layers and gallium nitride (GaN) barrier layers. To avoid undesired polarization and poor crystal quality due to large lattice mismatch between the aluminum gallium nitride electron blocking layer and the indium gallium nitride active layer, the aluminum content of the electron blocking layer is typically limited to 30% of the alloy composition. However, this limitation in aluminum content limits the effectiveness of aluminum gallium nitride electron blocking layers. In addition, hole injection into the active layer is reduced due to large Valence Band Offset (VBO). Therefore, studies have shown that the aluminum gallium nitride electron blocking layer cannot effectively attenuate electron leakage, resulting in a decrease in efficiency, i.e., internal quantum efficiency, as current density increases.
Accordingly, it is desirable to provide an optoelectronic device having an electron blocking layer that effectively blocks leakage of electrons from an active layer and facilitates hole injection.
Disclosure of Invention
According to one embodiment, there is a photovoltaic device comprising: the semiconductor device includes a substrate, a first doped contact layer disposed on the substrate, a multiple quantum well layer disposed on the first doped contact layer, a boron nitride alloy electron blocking layer disposed on the multiple quantum well layer, and a second doped contact layer disposed on the boron nitride alloy electron blocking layer.
According to another embodiment, there is a method of forming an optoelectronic device. A first doped contact layer is formed on a substrate. A multiple quantum well layer is formed on the first doped contact layer. And forming a boron nitride alloy electron barrier layer on the multiple quantum well layer. And forming a second doped contact layer on the boron nitride alloy electron blocking layer.
According to yet another embodiment, there is an optoelectronic device comprising a light emitting diode comprising a multiple quantum well layer, an electron blocking layer, a first doped contact layer and a second doped contact layer, and a high electron mobility transistor having a two-dimensional electron gas channel layer and an electron blocking layer. The two-dimensional electron gas channel layer of the high electron mobility transistor is composed of the last barrier layer of the multiple quantum well layer of the light emitting diode. The electron blocking layer is a boron nitride alloy electron blocking layer disposed on a two-dimensional electron gas channel layer of the high electron mobility transistor.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate one or more embodiments and, together with the description, explain these embodiments. In the drawings:
FIG. 1 is a schematic view of a photovoltaic device according to an embodiment;
fig. 2 is a flow diagram of a method of forming an optoelectronic device according to an embodiment;
fig. 3A and 3B are graphs of band edge profiles of optoelectronic devices having different electron blocking layers according to an embodiment;
FIGS. 4A and 4B are graphs of electron and hole carrier densities, respectively, for optoelectronic devices having different electron blocking layers according to embodiments;
fig. 5 is a graph of internal quantum efficiency of optoelectronic devices having different electron blocking layers according to an embodiment;
fig. 6 is a graph of output power versus current density for optoelectronic devices having different electron blocking layers according to an embodiment;
FIG. 7 is a graph of spontaneous emission rate versus wavelength for optoelectronic devices having different electron blocking layers according to an embodiment;
FIG. 8 is a graph of log radiative recombination rates for photovoltaic devices having different electron blocking layers according to an embodiment;
FIG. 9 is a schematic view of a photovoltaic device according to an embodiment;
10A and 10B are graphs of band edge profiles of optoelectronic devices having different electron blocking layers according to embodiments;
11A and 11B are graphs of electron and hole carrier densities, respectively, for optoelectronic devices having different electron blocking layers according to embodiments;
fig. 12 is a graph of internal quantum efficiency of optoelectronic devices having different electron blocking layers according to an embodiment;
fig. 13 is a graph of output power and voltage versus current density for optoelectronic devices having different electron blocking layers according to an embodiment;
FIG. 14 is a graph of log radiative recombination rates for photovoltaic devices having different electron blocking layers according to an embodiment; and
fig. 15 is a diagram of an optoelectronic device with a monolithically integrated light emitting diode and high electron mobility transistor, according to an embodiment.
Detailed Description
The following exemplary embodiments are described with reference to the accompanying drawings. The same reference numbers in different drawings identify the same or similar elements. The following detailed description does not limit the invention. Rather, the scope of the invention is defined by the appended claims. For simplicity, the following embodiments are discussed in terms of the terminology and structure of optoelectronic devices.
Reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the subject matter disclosed. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
Fig. 1 is a diagrammatic view of an optoelectronic device according to an embodiment. The optoelectronic device 100 includes a substrate 105 and a first doped contact layer 110 disposed on the substrate 105. The multiple quantum well layer 115 is disposed on the first doped contact layer 110. A boron nitride alloy electron blocking layer 120 is disposed on the multiple quantum well layer 115. A second doped contact layer 125 is disposed on the boron nitride alloy electron blocking layer 120. The optoelectronic device 100 is a light emitting diode.
In one embodiment, the substrate 105 can be, for example, a sapphire substrate. The first doped contact layer 110 can be, for example, a 3 μm n-type gallium nitride (GaN) layer. The doping of the first contact layer 110 can be, for example, 5 x 1018cm-3Is doped n-type (e.g., silicon doped). In another embodiment, the first doped contact layer 110 can be an aluminum gallium nitride layer. The mqw layer 115 includes a plurality of alternating barrier layers 115A and active layers 115B (only two of which are labeled). In one embodiment, the barrier layer 115A can be, for example, an 8nm thick gallium nitride layer, and the active layer 115B can be, for example, a 2nm thick indium gallium nitride layer. In one embodiment, the indium gallium nitride active layer 115B can be In0.20Ga0.80And N layers. In another embodiment, the active layer 115B can be an aluminum gallium nitride layer. The mqw layer 115 further includes a sixth barrier layer 115C, which can be thicker than the other barrier layers 115A. For example, the sixth barrier layer 115C can be 18nm thick. Although the illustrated embodiment includes five barrier layers 115A and active layers 115B, the multiple quantum well layer 115 can include more or less than five barrier layers 115A and active layers 115B.
The boron nitride alloy layer 120 can be, for example, a boron aluminum nitride (BAlN) layer. In one embodiment, the boron nitride alloy layer 120 has a composition of B0.14Al0.86And N is added. However, it should be recognized that the boron and aluminum content can be varied with B0.14Al0.86The content of boron and aluminum in N varies, as long as some boron forms an optoelectronic device with band edge profiles as described below, which helps to form a higher electron blocking barrier and a lower hole barrier, allowing less electrons to escape from the active layer and more holes to be injected into the active layer. The second doped contact layer 125 can be, for example, a 100nm p-type GaN layer. The doping of the second contact layer 125 can be, for example, 2 x 1018cm-3P-type doping (e.g., magnesium doping). In another embodiment, the second doped contact layer 125 can be an aluminum gallium nitride layer. The optoelectronic device 100 further includes electrodes 130A and 130B for powering the device. The photoelectric device 100 configured as described above functions as a blue light emitting diode.
Fig. 2 is a flow diagram of a method of forming an optoelectronic device according to an embodiment. First, a first doped contact layer 110 is formed on a substrate 105 (step 205). A multiple quantum well layer 115 is then formed on the first doped contact layer 110 (step 210). A boron nitride alloy electron blocking layer 120 is formed on the multiple quantum well layer 115 (step 215). A second doped contact layer 125 is formed on the boron nitride alloy electron blocking layer 120 (step 220). Then, the electrodes 130A and 130B can be formed.
The method shown in the flow chart of fig. 2 can be performed using any technique suitable for the materials of the various layers. In an embodiment, the optoelectronic device 100 can be formed using, for example, Metal Organic Chemical Vapor Deposition (MOCVD).
The disclosed optoelectronic devices with boron nitride alloy electron blocking layers were evaluated relative to similar devices with aluminum gallium nitride electron blocking layers. The two devices are identical except for the composition and thickness of the electron blocking layer and the thickness of the sixth barrier layer. Specifically, an 18nm sixth barrier layer was employed in devices with a boron nitride alloy electron blocking layer, and the boron nitride alloy electron blocking layer was 10nm thick B0.14Al0.86And N layers. The sixth barrier layer of 8nm is employed in devices with an aluminum gallium nitride electron barrier layer, and the aluminum gallium nitride electron barrier layer is 20nm thick Al0.15Ga0.85And N layers.
FIGS. 3A and 3B are each 200A/cm2B of (A)0.14Al0.86N-electron blocking layer and Al0.15Ga0.85Graph of band edge profile of a photovoltaic device with an N-electron blocking layer. As shown, the photovoltaic device with the AlGaN electron blocking layer has a B hole barrier height compared to the 450meV hole barrier height of the photovoltaic device with the AlGaN electron blocking layer0.14Al0.86The photovoltaic device of the N-electron blocking layer has a more favorable hole barrier height of 330 meV. Therefore, with Al0.15Ga0.85Photoelectric devices having an N-electron blocking layer, in contrast to those having B0.14Al0.86Photovoltaic devices with N-electron blocking layers allow for greater hole insertion.
In addition, with Al0.15Ga0.85Photoelectric devices with an N-electron blocking layer having a 600meV electron barrier height compared to that of B0.14Al0.86The photovoltaic device of the N-electron blocking layer has a more favorable electron barrier height of 1.43 eV. Therefore, with Al0.15Ga0.85Photoelectric devices having an N-electron blocking layer, in contrast to those having B0.14Al0.86The photovoltaic device of the N-electron blocking layer blocks more electrons.
For understanding the corresponding carrier distribution, at 200A/cm2The concentration of electrons and holes was evaluated at the current density of (a), and the results are shown in fig. 4A and 4B on a logarithmic scale. As shown, and has Al0.15Ga0.85A photovoltaic device of N, having B0.14Al0.86The larger electron barrier and smaller hole barrier of the optoelectronic device of the N-electron blocking layer results in a reduction of electron leakage from the quantum well and an increase of hole concentration in the quantum well. In the last three quantum wells, as shown in FIG. 4A, there is B0.14Al0.86Electron concentration in photovoltaic devices with N-electron blocking layers is increased while having Al0.15Ga0.85The electron concentration in the photovoltaic device of the N-electron blocking layer is kept at a low level. Then, the electron concentration is in the sixth barrier layer and B0.14Al0.86The interface between the N electron blocking layer is obviously reduced, and the reduction is between the sixth barrier layer and Al0.15Ga0.85The interface between the N-electron blocking layers is not apparent. This proves that B0.14Al0.86N electron blocking layer ratio of Al0.15Ga0.85The N-electron blocking layer blocks significantly more electrons.
Turning now to FIG. 4B, there is B due to the lower hole potential height resulting in more hole injection0.14Al0.86The hole concentration in the device of the N-electron blocking layer is significantly increased in the five quantum wells. The improved hole injection can also be confirmed by the lower hole concentration at the interface between the EBL and the p-GaN layer, which indicates that B0.14Al0.86N electron blocking layer ratio of Al0.15Ga0.85The N-electron blocking layer allows significantly more hole injection.
As mentioned above, Al0.15Ga0.85One of the problems with N-electron blocking layers is apparentThe efficiency is reduced. Therefore, the Internal Quantum Efficiency (IQE) and the output power of two light emitting diodes having different electron blocking layers were evaluated according to their current densities, and the results are shown in fig. 5 and 6. As shown in FIG. 5, having B0.14Al0.86The photovoltaic device of the N electron blocking layer has a peak internal quantum efficiency of 88% and Al0.15Ga0.85The peak internal quantum efficiency of the photovoltaic device of the N-electron blocking layer was 80%. Furthermore, at 400A/cm2At a current density of (2) with Al0.15Ga0.85The photovoltaic device of the N-electron blocking layer showed a 62% drop in internal quantum efficiency from its peak internal quantum efficiency, with B0.14Al0.86The photovoltaic device of the N-electron blocking layer showed a drop in internal quantum efficiency from 30% of its peak internal quantum efficiency. Therefore, with Al0.15Ga0.85Photoelectric devices having an N-electron blocking layer, in contrast to those having B0.14Al0.86Photovoltaic devices with N-electron blocking layers operate more efficiently at higher current densities.
As shown in FIG. 6, having B0.14Al0.86Photovoltaic devices with N-electron blocking layers produce higher output power with respect to current density. Photovoltaic device B as shown0.14Al0.86N and Al0.15Ga0.85The difference in output power of N deviates as the current density increases. This is due to the presence of Al0.15Ga0.85Photoelectric devices having an N-electron blocking layer, in contrast to those having B0.14Al0.86The photoelectric device of the N electronic barrier layer has smaller internal quantum efficiency reduction and larger emissivity.
As shown in FIG. 7, having B0.14Al0.86The photovoltaic device of the N-electron blocking layer also produces a stronger light emission at the desired wavelength of about 450nm, corresponding to the blue light emission. In particular, at 450nm, with B0.14Al0.86The spontaneous emission rate of the photovoltaic device of the N electron blocking layer is about 1.6 multiplied by 1026cm-3s-1eV-1Whereas the spontaneous emission rate of the photovoltaic device having the AlGaN electron blocking layer is about 1X 1026cm-3s-1eV-1。
As shown in FIG. 8, with Al0.15Ga0.85Photoelectric devices having an N-electron blocking layer, in contrast to those having B0.14Al0.86The photoelectric device of the N electron blocking layer improves the radiation recombination rate. As shown, and has Al0.15Ga0.85Photoelectric devices having an N-electron blocking layer, in contrast to those having B0.14Al0.86The logarithmic radiative recombination rate (i.e., the rate of photon or light generation) of the photovoltaic device of the N-electron blocking layer exhibits higher peaks and valleys. It should be noted that in fig. 8, the positions from 0.01 to 0.07 represent the positions of multiple quantum well layers.
Fig. 3A-8 illustrate performance characteristics of a blue LED. The boron aluminum nitride electron blocking layer of the present invention can also be used with other types of light emitting diodes, such as ultraviolet light emitting diodes, examples of which will now be described in connection with fig. 9-14.
Fig. 9 illustrates an optoelectronic device according to one embodiment, which in the illustrated embodiment is an ultraviolet LED. The reference numerals used are similar to those of figure 1. The optoelectronic device 900 includes a substrate 905 and a first doped contact layer 910 disposed on the substrate 905. The multiple quantum well layer 915 is disposed on the first doped contact layer 910. A boron nitride alloy electron blocking layer 920 is disposed on the multiple quantum well layer 915. A second doped contact layer 925 is disposed on the boron nitride alloy electron blocking layer 920. A capping layer 935 is disposed on the second doped contact layer 925. The cover layer 935 reduces contact resistance. It should be noted that no capping layer is needed in the device 100 of fig. 1, because the device 100 comprises the aluminum gallium nitride second contact layer 125 as a top layer, which effectively performs the function of a capping layer.
In one embodiment, the substrate 905 can be, for example, a sapphire substrate. The first doped contact layer 910 can be, for example, Al0.20Ga0.80An N-type aluminum gallium nitride layer of 3 μm composed of N. The doping of the first contact layer 910 can be, for example, 5 x 1018cm-3Is doped n-type (e.g., silicon doped). The multiple quantum well layer 915 includes a plurality of alternating barrier layers 915A and active layers 915B (only two of which are labeled). In one embodiment, the barrier layer 915A can beIs an aluminum gallium nitride layer, e.g., 8nm thick, and the active layer 915B can be a gallium nitride layer, e.g., 2nm thick. In one embodiment, the aluminum gallium nitride barrier layer 915B can be Al0.20Ga0.80And N layers. Unlike the blue light emitting diode of fig. 1, the ultraviolet light emitting diode of fig. 9 does not include a sixth barrier layer as part of the multiple quantum well layer 915. Although the illustrated embodiment includes five barrier layers 915A and active layers 915B, the multiple quantum well layer 915 can include more or less than five barrier layers 915A and active layers 915B.
The boron nitride alloy layer 920 can be, for example, a boron aluminum nitride layer. In one embodiment, the boron nitride alloy layer 920 has a composition of B0.14Al0.86And N is added. However, it should be recognized that the boron and aluminum content can be varied with B0.14Al0.86The boron and aluminum content in N differ as long as some boron forms an optoelectronic device with band edge profiles as described below, which helps to form a higher electron blocking barrier and a lower hole barrier, allowing less electrons to escape from the active layer and more holes to be injected into the active layer. The second doped contact layer 925 can be, for example, Al0.10Ga0.90A 100nm p-type aluminum gallium nitride layer consisting of N. The doping of the second contact layer 925 can be, for example, 5 x 1017cm-3P-doping (e.g., magnesium doping). The overlay layer 935 can be, for example, of 5 × 1018cm-3A p-doped 10nm thick gallium nitride layer. The opto-electronic device 900 also includes electrodes 930A and 930B for powering the device. In one embodiment, UV LED 900 has a thickness of, for example, 200X 200 μm2Is rectangular in area.
The method of manufacturing the uv led is similar to the method of manufacturing the blue led described above, in combination with the additional step of forming a cover layer 935 on top of the second doped contact layer.
The disclosed optoelectronic devices with boron nitride alloy electron blocking layers were evaluated relative to similar devices with aluminum gallium nitride electron blocking layers. The two devices are identical except for the composition of the electron blocking layer. Specifically, the boron nitride alloy electron blocking layer is 10nm thick B0.14Al0.86N layer and the AlGaN electron blocking layer is 10nm thick Al0.30Ga0.70And N layers.
FIGS. 10A and 10B are respectively shown with Al as shown in FIG. 90.30Ga0.70A p-type electron blocking layer of N and B0.14Al0.86The structure of the light emitting diode with the structure of the N p-type electron blocking layer is 200A/cm2Energy band edge profile at current density of (a). As shown in FIG. 10A, due to the polarization induced electric field, there is Al0.30Ga0.70The energy band at the last quantum barrier and electron blocking layer of the device of the p-type electron blocking layer of N is pulled low. The bending effect greatly reduces the effective barrier height in the conduction band of electrons, which deteriorates the electron blocking effect. In addition, the last quantum barrier of GaN is associated with Al0.30Ga0.70Hole injection is also hindered by a very large valence band offset between the N p-type electron blocking layers.
As shown in FIGS. 10A and 10B, Al0.30Ga0.70The effective conduction band barrier height of electrons in the N p-type electron blocking layer is 490meV, to B0.14Al0.86The 2.1eV in the p-type electron blocking layer of N is much smaller. B is0.14Al0.86The 2.1eV conduction band barrier height of the N p-type electron blocking layer can significantly reduce electron leakage. Further, as shown in FIG. 10A, Al is present0.30Ga0.70The light emitting diode of the N p-type electron blocking layer creates a high valence band barrier of 400meV for holes, which can hinder the transport of holes into the active region of the device. As shown in FIG. 10B, in the state of having B0.14Al0.86In the light emitting diode with the N p-type electron blocking layer, the valence band barrier of holes is reduced to 270 meV. The high conduction band barrier height of the electron and the small valence band barrier height of the hole are respectively represented by B0.14Al0.86The wide band gap of the N p-type electron blocking layer and almost zero Valence Band Offset (VBO) with respect to the p-type aluminum gallium nitride contact layer.
For understanding the corresponding carrier distribution, at 200A/cm2The concentration of electrons and holes was evaluated at the current density of (a), and the results are shown in fig. 11A and 11B on a logarithmic scale. As can be seen by comparing FIGS. 11A and 11B, the method of the present inventionHigh conduction band barrier height for electrons and low valence band barrier height for holes, B0.14Al0.86The N p-type electron blocking layer promotes both effective electron blocking and hole injection into the active region, resulting in higher carrier concentration levels in the multiple quantum wells and less electron leakage into the p-type aluminum gallium nitride layer.
The internal quantum efficiency, forward voltage relationship and output power of two ultraviolet light emitting diodes having different electron blocking layers were evaluated according to their current densities, and the results are shown in fig. 12 and 13. As shown in FIG. 12, B0.14Al0.86The p-type electron blocking layer of N is 400A/cm2Has an efficiency ratio at a current density of Al0.30Ga0.70The device of the N p-type electron blocking layer is improved by 42 percent. In addition, B0.14Al0.86The N p-type electron blocking layer reduces the efficiency drop (defined as the rate at which the efficiency drops from the peak) by 24%.
As shown by the lower two curves in fig. 13 (indicated by circles with arrows pointing to the right vertical axis in the figure), and using Al0.30Ga0.70P-type electron blocking layer of N compared with B0.14Al0.86A p-type electron blocking layer of N, 400A/cm2The output power of the ultraviolet light emitting diode at the current density of (a) is increased from 10mW to 22 mW. Due to the use of B0.14Al0.86The N p-type electron blocking layer realizes improved carrier injection, and the internal quantum efficiency and the output power are both obviously improved.
As shown by the upper two curves in FIG. 13 (represented by circles with arrows pointing to the left vertical axis in the figure), the current-voltage (I-V) curves are shown with Al0.30Ga0.70Comparison of the 3.5V conduction voltage of the N p-type electron blocking layer LED, B0.14Al0.86The p-type electron blocking layer of N produces a large on-voltage of 3.8V. The large on-state voltage originates from the wide band gap B0.14Al0.86High activation energy of the dopant in the N p-type electron blocking layer results in large sheet resistance. In addition, having B0.14Al0.86N p-type electron blocking layerThe photodiode also has a large forward voltage after the device is turned on.
To fully understand the power conversion efficiency, the electro-optic conversion efficiency (WPE) (defined as the ratio of output power to input power) was calculated. It has been confirmed that Al is contained0.30Ga0.70The electro-optic conversion efficiency of the ultraviolet light emitting diode with the N p-type electron blocking layer is lower than 6 percent, and the ultraviolet light emitting diode with the N p-type electron blocking layer has the B0.14Al0.86The ultraviolet light emitting diode with the N p-type electron blocking layer can improve the electro-optic conversion efficiency to 8%. It has also been determined to have Al0.30Ga0.70Devices with P-type electron blocking layers of N, having B0.14Al0.86The electro-optic conversion efficiency of the device of the N p-type electron blocking layer is 400A/cm2The current density of (a) is improved by 2.4%.
And with Al0.30Ga0.70Compared with an ultraviolet light-emitting diode with an N p-type electron blocking layer, the ultraviolet light-emitting diode with the N p-type electron blocking layer has the structure that B is0.14Al0.86The ultraviolet light emitting diode with the N p-type electron blocking layer shows larger emitted light intensity. The emitted light intensity is determined by the radiative recombination process in the active region. FIG. 14 shows a structure having Al0.30Ga0.70UV-LED with P-type electron blocking layer of N and having B0.14Al0.86The ultraviolet light emitting diode with the N p-type electron blocking layer is 200A/cm2A comparison of radiative recombination rates (logarithmic scale) in the active region at current densities of (a). As shown, has B0.14Al0.86Devices with a p-type electron blocking layer of N exhibit peak radiative recombination rates with Al0.30Ga0.70The peak radiative recombination rate of the device of the N p-type electron blocking layer is about four times (i.e., the logarithmic scale increases from 27.2 to 27.8). The enhanced radiative recombination rate is due to Al0.30Ga0.70Devices with P-type electron blocking layers of N, having B0.14Al0.86The carrier concentration in the active region of the device increases for a p-type electron blocking layer of N.
Fig. 15 is a schematic view of a photovoltaic device according to an embodiment. The reference numerals in fig. 15 are similar to those in fig. 1 and 9. The optoelectronic device 1500 is a combined light emitting diode and High Electron Mobility Transistor (HEMT). Specifically, the device 1500 comprises a light emitting diode comprising a multiple quantum well layer 1515, an electron blocking layer 1520, and two doped contact layers 1510 and 1525. The device also includes a high electron mobility transistor that includes a boron nitride alloy electron blocking layer 1520 and a portion of the last quantum barrier layer 1540 that is a two-dimensional electron gas (2DEG)1541 channel. Thus, as shown, the channel 1541 is comprised of a portion of the last quantum barrier layer 1540 of the multiple quantum well layer 1515. A boron nitride alloy electron blocking layer 1520 is disposed over the channel 1541 of the high electron mobility transistor.
The device 1500 further comprises a substrate 1505, a first doped contact layer 1510 interposed between the substrate 1505 and the multiple quantum well layer 1515, a second doped contact layer 1525 arranged on top of the boron nitride alloy electron blocking layer 1520, a capping layer 1535 arranged on top of the second doped contact layer 1525 of the high electron mobility transistor. Contacts 1530A and 1530B are disposed on top of first doped layer 1510 and cap layer 1535, respectively, and serve as current sinks and sources, respectively, for the light emitting diodes. Contact 1530B also serves as the gate of the high electron mobility transistor. Optionally, another contact may be arranged on top of the cover layer 1535 to exclusively serve as a gate for the high electron mobility transistor. Contacts 1530C and 1530D are the drain and source, respectively, of the high electron mobility transistor and are disposed on top of the last quantum barrier layer 1540. The composition and dimensions of the various layers can be the same or different than in the devices of fig. 1 and 9.
The boron nitride alloy electron barrier layer 1520 allows a portion of the last quantum barrier 1540 of the multiple quantum well layer 1515 to serve as a two-dimensional electron gas 1541 channel for high electron mobility transistors. In particular, the large lattice mismatch between the boron nitride alloy electron blocking layer 1520 and the low aluminum content aluminum gallium nitride or gallium nitride layer 1540 (which serves as the last quantum well barrier layer) induces a very strong electric field at the interface between the two layers, which results in a severe downward bending of the energy band as shown in fig. 3A and 10B. This severe downward curvature at the interface is similar to a two-dimensional electron air channel in a high electron mobility transistor and thus the last quantum barrier layer 1540 can be shared between the light emitting diode and the high electron mobility transistor to provide a monolithically integrated light emitting diode and high electron mobility transistor that is cheaper and smaller than conventional light emitting diode and high electron mobility transistor combinations.
It should be appreciated that the encroachment in the light emitting diode can be reduced by increasing the aluminum content of the last quantum barrier layer 1540 (rather than utilizing severe encroachment at the interface to form a monolithically integrated light emitting diode and high electron mobility transistor). The thickness and amount of doping (as appropriate) of each layer in fig. 15 can be the same or similar to the corresponding layer in fig. 9. Although fig. 15 shows a monolithic device incorporating both high electron mobility transistors and UV light emitting diodes, such a monolithic device can incorporate any type of light emitting diode with high electron mobility transistors, such as the blue light emitting diode described above in connection with fig. 1.
Although the exemplary embodiments have been described in connection with light emitting diodes, the disclosed electron blocking layers can be used in other types of optoelectronic devices where electron leakage from the active layer is to be reduced or eliminated.
The disclosed embodiments provide a photovoltaic device and a method of manufacturing the same. It should be understood that this description is not intended to limit the invention. On the contrary, the exemplary embodiments are intended to cover alternatives, modifications and equivalents, which may be included within the spirit and scope of the invention as defined by the appended claims. Furthermore, in the detailed description of the exemplary embodiments, numerous specific details are set forth in order to provide a thorough understanding of the claimed invention. However, it will be understood by those skilled in the art that various embodiments may be practiced without such specific details.
Although the features and elements of the present exemplary embodiments are described in the embodiments in particular combinations, each feature or element can be used alone without the other features and elements of the embodiments or in various combinations with or without other features and elements disclosed herein.
This written description uses examples of the subject matter disclosed to enable any person skilled in the art to practice the subject matter, including making and using any devices or systems and performing any incorporated methods. The patentable scope of the subject matter is defined by the claims, and may include other examples that occur to those skilled in the art. Such other examples are intended to be included within the scope of the claims.
Claims (17)
1. An optoelectronic device (100, 900) comprising:
a substrate (105, 905);
a first doped contact layer (110, 910) disposed on a substrate (105, 905);
a multiple quantum well layer (115, 915) disposed on the first doped contact layer (110, 910);
a boron nitride alloy electron blocking layer (120, 920) disposed on the multiple quantum well layer (115, 915);
a second doped contact layer (125, 925) disposed on the boron nitride alloy electron blocking layer (120, 920);
wherein the boron nitride alloy electron blocking layer comprises:
boron;
aluminum; and
nitrogen;
wherein the boron nitride alloy electron blocking layer comprises:
BxAl1-xN。
2. an optoelectronic device according to claim 1, wherein the first doped contact layer is an n-type contact layer and the second doped contact layer is a p-type contact layer.
3. An optoelectronic device according to claim 1, wherein the boron nitride alloy electron blocking layer comprises:
B0.14Al0.86N。
4. the optoelectronic device of claim 1, wherein the first and second doped contact layers comprise gallium nitride.
5. The optoelectronic device of claim 1, wherein the first and second doped contact layers comprise aluminum gallium nitride.
6. An optoelectronic device according to claim 1, wherein the multiple quantum well layer comprises:
at least one layer of gallium nitride; and
at least one layer of aluminum gallium nitride.
7. An optoelectronic device according to claim 1, wherein the multiple quantum well layer comprises:
at least one layer of gallium nitride; and
at least one layer of indium gallium nitride.
8. An optoelectronic device according to claim 1, wherein the optoelectronic device is a blue light emitting diode or an ultraviolet light emitting diode.
9. A method of forming an optoelectronic device (100, 900), the method comprising:
forming a first doped contact layer (110, 910) on a substrate (105, 905);
forming a multiple quantum well layer (115, 915) on the first doped contact layer (110, 910);
forming a boron nitride alloy electron blocking layer (120, 920) on the multiple quantum well layer (115, 915); and
forming a second doped contact layer (125, 925) on the boron nitride alloy electron blocking layer (120, 920);
wherein the forming of the boron nitride alloy electron blocking layer comprises:
forming a boron nitride alloy electron blocking layer such that an amount of boron and an amount of aluminum in the boron nitride alloy electron blocking layer have the following relationship:
BxAl1-xN。
10. the method of claim 9, wherein the forming of the boron nitride alloy electron blocking layer comprises:
is formed to have B0.14Al0.86A boron nitride alloy electron blocking layer of N.
11. The method of claim 9, wherein the forming of the first and second doped contact layers comprises:
forming a first doped contact layer as an n-doped layer; and
the second doped contact layer is formed as a p-type layer.
12. The method of claim 9, wherein the forming of the multiple quantum well layer comprises:
forming at least one layer of gallium nitride; and
at least one layer of indium gallium nitride is formed.
13. An optoelectronic device (1500), comprising:
a light emitting diode comprising a multiple quantum well layer (1515), an electron blocking layer (1520), a first doped contact layer (1510), and a second doped contact layer (1525); and
a high electron mobility transistor comprising a two-dimensional electron gas channel (1541) and an electron blocking layer (1520), wherein the two-dimensional electron gas channel (1541) of the high electron mobility transistor consists of the last quantum barrier layer (1540) of a multiple quantum well layer (1515) of a light emitting diode,
wherein the electron blocking layer (1520) is a boron nitride alloy electron blocking layer (1520) disposed on a two-dimensional electron gas channel (1541) of a high electron mobility transistor.
14. An optoelectronic device according to claim 13, wherein the boron nitride alloy electron blocking layer comprises:
BxAl1-xN。
15. an optoelectronic device according to claim 13, wherein the multiple quantum well layer comprises:
at least one layer of gallium nitride; and
at least one layer of aluminum gallium nitride.
16. An optoelectronic device according to claim 13, further comprising:
a substrate, wherein,
the first doped contact layer is disposed on a substrate,
the multiple quantum well layer is disposed on the first doped contact layer, an
The second doped contact layer is disposed on the boron nitride alloy electron blocking layer.
17. An optoelectronic device according to claim 13, wherein the optoelectronic device is a monolithically integrated device.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762559842P | 2017-09-18 | 2017-09-18 | |
| US62/559,842 | 2017-09-18 | ||
| PCT/IB2018/056988 WO2019053619A1 (en) | 2017-09-18 | 2018-09-12 | Optoelectronic device having a boron nitride alloy electron blocking layer and method of production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111201616A CN111201616A (en) | 2020-05-26 |
| CN111201616B true CN111201616B (en) | 2020-12-11 |
Family
ID=63713954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880060084.4A Active CN111201616B (en) | 2017-09-18 | 2018-09-12 | Optoelectronic device with boron nitride alloy electron blocking layer and method of manufacture |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US11069834B2 (en) |
| CN (1) | CN111201616B (en) |
| WO (1) | WO2019053619A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110600547B (en) * | 2019-09-19 | 2020-12-18 | 厦门市三安集成电路有限公司 | Gallium nitride-based semiconductor device and manufacturing method thereof |
| CN112259654B (en) * | 2020-10-20 | 2022-02-22 | 广东省科学院半导体研究所 | Ultraviolet LED epitaxial wafer and preparation method and application thereof |
| CN114050208A (en) * | 2021-11-11 | 2022-02-15 | 上海大学 | Improved high electron mobility light emitting transistor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000332295A (en) * | 1999-05-24 | 2000-11-30 | Sanyo Electric Co Ltd | Light emitting element and its manufacture |
| CN1617363A (en) * | 2004-10-26 | 2005-05-18 | 金芃 | Conductice and insulation quasi gallium nitride base growing substrate and its technology and process with low cost |
| CN1622350A (en) * | 2003-11-26 | 2005-06-01 | 三垦电气株式会社 | Light-emitting semiconductor device and method of fabrication |
| WO2008057193A1 (en) * | 2006-11-08 | 2008-05-15 | Raytheon Company | Boron aluminum nitride diamond heterostructure |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3497685B2 (en) * | 1996-02-16 | 2004-02-16 | 株式会社東芝 | Semiconductor device using semiconductor BCN compound |
| US6841806B1 (en) * | 2003-06-24 | 2005-01-11 | The University Of Connecticut | Heterojunction thyristor-based amplifier |
| US7800097B2 (en) * | 2004-12-13 | 2010-09-21 | Panasonic Corporation | Semiconductor device including independent active layers and method for fabricating the same |
| US7265374B2 (en) * | 2005-06-10 | 2007-09-04 | Arima Computer Corporation | Light emitting semiconductor device |
| US8183556B2 (en) * | 2005-12-15 | 2012-05-22 | Intel Corporation | Extreme high mobility CMOS logic |
| TW200843134A (en) * | 2007-04-20 | 2008-11-01 | Everlight Electronics Co Ltd | Light emitting diode structure |
| US8455856B1 (en) * | 2010-04-09 | 2013-06-04 | Stc.Unm | Integration of LED driver circuit with LED |
| KR102032437B1 (en) * | 2012-02-28 | 2019-10-16 | 루미리즈 홀딩 비.브이. | Integration of gallium nitride leds with aluminum gallium nitride/gallium nitride devices on silicon substrates for ac leds |
| US9093581B2 (en) * | 2012-05-05 | 2015-07-28 | Texas Tech University System | Structures and devices based on boron nitride and boron nitride-III-nitride heterostructures |
| US20130292685A1 (en) * | 2012-05-05 | 2013-11-07 | Texas Tech University System | Structures and Devices Based on Boron Nitride and Boron Nitride-III-Nitride Heterostructures |
| KR101957816B1 (en) * | 2012-08-24 | 2019-03-13 | 엘지이노텍 주식회사 | Light emitting device |
| US20160005919A1 (en) * | 2013-02-05 | 2016-01-07 | Tokuyama Corporation | Nitride semiconductor light emitting device |
| US9647168B2 (en) * | 2013-09-03 | 2017-05-09 | Sensor Electronic Technology, Inc. | Optoelectronic device with modulation doping |
| CN105580146B (en) * | 2013-09-23 | 2018-09-21 | 传感器电子技术股份有限公司 | Group III-nitride heterojunction structure for opto-electronic device |
| DE102015103323A1 (en) * | 2015-03-06 | 2016-09-08 | Infineon Technologies Austria Ag | A method of manufacturing semiconductor devices by bonding a semiconductor wafer to a base substrate, composite wafer, and semiconductor device |
| US9948062B2 (en) * | 2015-09-14 | 2018-04-17 | Sensor Electronic Technology, Inc. | Solid-state lighting structure with light modulation control |
| US10002862B2 (en) * | 2015-09-14 | 2018-06-19 | Sensor Electronic Technology, Inc. | Solid-state lighting structure with integrated short-circuit protection |
| KR102700750B1 (en) * | 2015-12-04 | 2024-08-28 | 큐로미스, 인크 | Wide band gap device integrated circuit architecture on fabricated substrates |
| US9894723B2 (en) * | 2015-12-31 | 2018-02-13 | Sensor Electronic Technology, Inc. | Solid-state lighting structure with integrated control |
| US10237929B2 (en) * | 2016-04-27 | 2019-03-19 | Sensor Electronic Technology, Inc. | Solid-state lighting source with integrated electronic modulator |
| US11348908B2 (en) * | 2016-08-17 | 2022-05-31 | The Regents Of The University Of California | Contact architectures for tunnel junction devices |
| US10672884B2 (en) * | 2016-09-28 | 2020-06-02 | Intel Corporation | Schottky diodes on semipolar planes of group III-N material structures |
| US10890712B2 (en) * | 2018-05-11 | 2021-01-12 | Raytheon Bbn Technologies Corp. | Photonic and electric devices on a common layer |
-
2018
- 2018-09-12 WO PCT/IB2018/056988 patent/WO2019053619A1/en active Application Filing
- 2018-09-12 US US16/637,432 patent/US11069834B2/en active Active
- 2018-09-12 CN CN201880060084.4A patent/CN111201616B/en active Active
-
2021
- 2021-06-17 US US17/350,163 patent/US12046698B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000332295A (en) * | 1999-05-24 | 2000-11-30 | Sanyo Electric Co Ltd | Light emitting element and its manufacture |
| CN1622350A (en) * | 2003-11-26 | 2005-06-01 | 三垦电气株式会社 | Light-emitting semiconductor device and method of fabrication |
| CN1617363A (en) * | 2004-10-26 | 2005-05-18 | 金芃 | Conductice and insulation quasi gallium nitride base growing substrate and its technology and process with low cost |
| WO2008057193A1 (en) * | 2006-11-08 | 2008-05-15 | Raytheon Company | Boron aluminum nitride diamond heterostructure |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019053619A1 (en) | 2019-03-21 |
| US11069834B2 (en) | 2021-07-20 |
| CN111201616A (en) | 2020-05-26 |
| US12046698B2 (en) | 2024-07-23 |
| US20210313489A1 (en) | 2021-10-07 |
| US20200388722A1 (en) | 2020-12-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8330174B2 (en) | LED having current spreading layer | |
| US9685586B2 (en) | Semiconductor structure | |
| US8872157B2 (en) | Nitride semiconductor structure and semiconductor light emitting device including the same | |
| US12046698B2 (en) | Optoelectronic device having a boron nitride alloy electron blocking layer and method of production | |
| GB2543682A (en) | Epitaxial structure for improving efficiency drop of GaN-based LED | |
| US10199539B2 (en) | Vertical ultraviolet light emitting device | |
| CN103489973A (en) | Semiconductor light emitting structure | |
| Cao et al. | Temperature dependence of electron and hole impact ionization coefficients in GaN | |
| KR101211657B1 (en) | nitride semiconductor light emitting device | |
| US20100032649A1 (en) | Light emitting device and reduced polarization interlayer thereof | |
| CN108550670B (en) | Nitride semiconductor structure and semiconductor light emitting element | |
| US8932943B2 (en) | Nitride semiconductor light emitting device and method of manufacturing the same | |
| KR100751632B1 (en) | Light emitting device | |
| US20210066542A1 (en) | Epitaxial light emitting structure and light emitting diode | |
| KR101063286B1 (en) | Light emitting diodes with diffusion barrier | |
| CN107968138B (en) | Nitride light-emitting diode | |
| CN111987196A (en) | Semiconductor device with a plurality of semiconductor chips | |
| JP2011066047A (en) | Nitride semiconductor light emitting element | |
| KR101196961B1 (en) | Hlight emitting diode and method for manufacturing the same | |
| JP6670401B2 (en) | Semiconductor laminate | |
| US10153394B2 (en) | Semiconductor structure | |
| US9054275B1 (en) | Light emitting diode | |
| KR20160014343A (en) | Light emitting device and lighting system | |
| KR20130124718A (en) | Light emitting diode | |
| KR20230157953A (en) | light emitting element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |