CN111200029B - 一种光电探测器及其制备方法与应用 - Google Patents

一种光电探测器及其制备方法与应用 Download PDF

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CN111200029B
CN111200029B CN202010032304.1A CN202010032304A CN111200029B CN 111200029 B CN111200029 B CN 111200029B CN 202010032304 A CN202010032304 A CN 202010032304A CN 111200029 B CN111200029 B CN 111200029B
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杨为家
王凤鸣
关则毅
何鑫
温大尉
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Abstract

本发明公开了一种光电探测器及其制备方法与应用，所述光电探测器包括半导体薄膜、第一电极和第二电极；所述光电探测器由下至上依次为衬底、n型ZnAlO薄膜层、Ni@NiO量子点(quantum dot，QDs)层、ZnLiS层和p型AlZnLiN薄膜层，所述第一电极位于所述n型ZnAlO薄膜层上，所述第二电极位于所述p型AlZnLiN薄膜层的上表面。本发明方案设计巧妙，制备操作简单，制得的光电探测器响应灵敏度高，具有良好的工业应用前景。

Description

一种光电探测器及其制备方法与应用
技术领域
本发明涉及半导体材料技术领域，具体涉及一种光电探测器及其制备方法与应用。
背景技术
AlN是III-V族化合物，通常以六方晶系中的纤锌矿结构存在，具有许多优异的性能，如高的热传导性、低的热膨胀系数、高的电绝缘性质、高的介质穿强度、优异的机械强度、优异的化学稳定性和低毒害性、良好的光学性能等。由于AlN有诸多优异性能，如带隙宽、极性强，禁带宽度为6.2eV，使得其在光电探测器等领域有着广阔的应用前景。
光电探测器由于可以将光信号转换成为电信号输出而广泛的被应用在光学通讯、成像、生物传感中。AlN薄膜在制备基于光电探测器中具有潜在的应用价值，然而，由于AlN薄膜的激活比较困难，导致高质量AlN薄膜一直难以突破，这也使得基于AlN薄膜的光电器件一直处于研发的初始阶段。因此，制备一种高质量AlN薄膜对于开发光电器件具有重要意义。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一。为此，本发明提出一种光电探测器，该光电探测器结构新颖且响应灵敏度高。
本发明还提出一种上述光电探测器的制备方法。
本发明还提出一种上述光电探测器的应用。
本发明第一方面实施例的光电探测器，所述光电探测器包括AlN薄膜、第一电极和第二电极；所述AlN薄膜由下至上依次为衬底、n型ZnAlO薄膜层、Ni@NiO量子点(quantumdot，QDs)层、ZnLiS层和p型AlZnLiN薄膜层，所述第一电极位于所述n型ZnAlO薄膜层上，所述第二电极位于所述p型AlZnLiN薄膜层的上表面。
根据本发明的一些实施例，所述电极呈回形。
根据本发明的一些实施例，所述n型ZnAlO薄膜层的厚度为(300～1200)nm。
根据本发明的一些实施例，所述Ni@NiO QDs层的厚度为(2～50)nm。
根据本发明的一些实施例，所述ZnLiS层的厚度为(30～50)nm。
根据本发明的一些实施例，所述p型AlZnLiN薄膜层的厚度为(300～500)nm。
本发明实施例的光电探测器，至少具有以下有益效果：本发明方案将Zn和Li巧妙的共掺杂在AlN中，制得的薄膜材料不仅具有较好地结晶质量，而且具有较好的光学性能，在光电探测器制备中具有良好的应用前景，本发明方案的薄膜结构新颖，利用Ni@NiO QDs层提高光生载流子的空穴分离效率，该光电探测器具有较高的响应灵敏度。
本发明第二方面实施例的制备方法，包括以下步骤：
S1、在衬底上形成n型ZnAlO薄膜层；
S2、在所述n型ZnAlO薄膜层上形成Ni@NiO QDs层；
S3、在除第一电极安装空隙外的n型ZnAlO薄膜层表面部分生长ZnLiS薄膜层；
S4、在ZnLiS薄膜层表面生长p型AlZnLiN薄膜层，在n型ZnAlO薄膜层表面上第一电极安装空隙部分制备第一电极，在p型AlZnLiN薄膜层表面制备第二电极，即得所述光电探测器。
根据本发明的一些实施例，所述步骤S1中，n型ZnAlO薄膜层为使用磁控溅射法在(600～900)℃下溅射形成得到。
根据本发明的一些实施例，所述步骤S2中，Ni@NiO QDs层的形成过程为：在n型ZnAlO薄膜层溅射Ni金属膜层(优选为5～30nm)，并在氧等离子体气氛，(600～900)℃下退火(30～180)s，从而获得所述Ni@NiO QDs层。
根据本发明的一些实施例，所述步骤S3中，使用磁控溅射轰击ZnLiS靶材，在(500-900)℃生长(30-50)纳米的ZnLiS薄膜。
根据本发明的一些实施例，所述步骤S4中，使用磁控溅射溅射AlZnLiN靶材，在(700-900)℃生长(300-500)纳米的AlZnLiN薄膜层。
根据本发明的一些实施例，所述步骤S4中还包括p型激活操作；具体为，将AlZnLiN薄膜层在(850～950)℃、氮等离子气氛下退火处理(3～12)h。
根据本发明的实施例的制备方法，至少具有以下有益效果：本发明方案的制备工艺简单，成本低廉，利用量子点的高效分离技术，可以有效地提升光电探测器的性能；该方法可与现有生产设备兼容，有利于降低生产成本。
根据本发明第三方面实施例的应用，上述光电探测器在光学通讯、成像或生物传感领域中的应用。
根据本发明实施例的应用，至少具有以下有益效果：本发明的方案光电探测器响应灵敏度高，具有良好的工业应用前景。
本发明的附加方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本发明的实践了解到。
附图说明
图1为本发明实施例1中的光电探测器的侧面示意图；
图2为本发明实施例1中的光电探测器的性能测试结果图。
标号说明：11、衬底；12、ZnAlO薄膜层；13、Ni@NiO QDs层；14、ZnLiS薄膜层；15、AlZnLiN薄膜层；16、第二电极；17、第一电极。
具体实施方式
为详细说明本发明的技术内容、所实现目的及效果，以下结合实施方式予以说明。
本发明实施例1为：基于AlZnLiN/ZnLiS/Ni@NiO QDs/ZnAlO光电探测器，其制备步骤具体如下：
(1)首先在干净蓝宝石衬底11上使用磁控溅射在600℃下溅射形成300纳米n型ZnAlO薄膜层12；
(2)接着在n型ZnAlO薄膜层12溅射5纳米厚的Ni金属薄膜层，并在氧等离子体气氛下900℃快速退火30s，从而获得2-20纳米的Ni@NiO QDs层13；
(3)接着使用掩膜板盖住步骤(2)所制备的样品，留出n型电极(第一电极17)的位置；
(4)使用磁控溅射轰击高纯(99.9％以上)ZnLiS靶材，在500℃生长30纳米的ZnLiS薄膜层14；
(5)接着使用磁控溅射高纯(99.9％以上)AlZnLiN靶材，在700℃下生长500纳米的AlZnLiN薄膜层15。此后，并在900℃、氮等离子气氛下退火处理3h，实现p型激活。
(6)使用热蒸镀和掩膜板在p型AlZnLiN薄膜层15(即第二电极16)和n型ZnAlO薄膜层12上制备Pt电极，从而获得结构完整的光电探测器，如图1所示。
制备的光电探测器具有较好的性能，尤其对紫外光具有较好的响应特性，在外加8V偏压、250nm 0.5μW/cm2单色光照下电流-时间图如图2所示。从图2中可以看出，上升时间为20ms，下降时间为32ms，光敏性为0.91A/W。
本发明实施例2为：基于AlZnLiN/ZnLiS/Ni@NiO QDs/ZnAlO光电探测器，其制备步骤具体如下：
(1)首先在干净蓝宝石衬底11上使用磁控溅射在900℃下溅射1200纳米n型ZnAlO薄膜层12；
(2)接着在n型ZnAlO薄膜层12溅射30纳米厚的Ni金属薄膜层，并在氧等离子体气氛下600℃快速退火180s，从而获得20-50纳米的Ni@NiO QDs层13；
(3)接着使用掩膜板盖住步骤(2)所制备的样品，留出n型电极的位置；
(4)使用磁控溅射轰击高纯ZnLiS靶材，在900℃生长50纳米的ZnLiS薄膜层14；
(5)接着使用磁控溅射高纯AlZnLiN靶材，在900℃下生长500纳米的AlZnLiN薄膜层15。此后，并在900℃、氮等离子气氛下退火处理12h，实现p型激活。
(6)使用热蒸镀和掩膜板在p型AlZnLiN薄膜层15和n型ZnAlO薄膜层12上制备Au电极，从而获得结构完整的光电探测器。
本实施例制备的光电探测器，性能与实施例1类似，在此不再赘述。
本发明中所称“第一”、“第二”仅为便于说明存在两个电极及两个电极的相对位置，并不对其构成限定，两个电极既可以为同类电极也可以为不同类电极，也不对其顺序构成限制。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书内容所作的等同变换，或直接或间接运用在相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (10)

1.一种光电探测器，其特征在于：所述光电探测器包括半导体薄膜、第一电极和第二电极；所述光电探测器由下至上依次为衬底、n型ZnAlO薄膜层、Ni@NiO QDs层、ZnLiS层和p型AlZnLiN薄膜层，所述第一电极位于所述n型ZnAlO薄膜层上，所述第二电极位于所述p型AlZnLiN薄膜层的上表面。
2.根据权利要求1所述的光电探测器，其特征在于：所述n型ZnAlO薄膜层的厚度为300nm ~1200nm。
3.根据权利要求1所述的光电探测器，其特征在于：所述Ni@NiO QDs层的厚度为2 nm ~50nm。
4.根据权利要求1所述的光电探测器，其特征在于：所述ZnLiS层的厚度为30nm~50nm。
5.根据权利要求1所述的光电探测器，其特征在于：所述p型AlZnLiN薄膜层的厚度为300 nm ~500nm。
6.一种光电探测器的制备方法，其特征在于：包括以下步骤：
S1、在衬底上形成n型ZnAlO薄膜层；
S2、在所述n型ZnAlO薄膜层上形成Ni@NiO QDs层；
S3、在除第一电极安装空隙外的n型ZnAlO薄膜层表面部分生长ZnLiS薄膜层；
S4、在ZnLiS薄膜层表面生长p型AlZnLiN薄膜层，在n型ZnAlO薄膜层表面上第一电极安装空隙部分制备第一电极，在p型AlZnLiN薄膜层表面制备第二电极，即得所述光电探测器。
7.根据权利要求6所述的光电探测器的制备方法，其特征在于：所述步骤S2中，Ni@NiOQDs层的形成过程为：在n型ZnAlO薄膜层溅射Ni金属膜层，并在氧等离子体气氛，600℃~900℃下退火30 s ~180s，从而获得所述Ni@NiO QDs层。
8.根据权利要求6所述的光电探测器的制备方法，其特征在于：所述步骤S4中，使用磁控溅射溅射AlZnLiN靶材，在700℃-900℃生长300纳米-500纳米的AlZnLiN薄膜层。
9.根据权利要求6所述的光电探测器的制备方法，其特征在于：所述步骤S4中还包括p型激活操作；具体为，将AlZnLiN薄膜层在850℃~950℃、氮等离子气氛下退火处理3h~12h。
10.如权利要求1至5任一项所述的光电探测器在光学通讯、成像或生物传感领域中的应用。
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