CN111193174A - 一种基于碲化铋异质结的可饱和吸收体及其制备方法和应用 - Google Patents
一种基于碲化铋异质结的可饱和吸收体及其制备方法和应用 Download PDFInfo
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- CN111193174A CN111193174A CN202010028390.9A CN202010028390A CN111193174A CN 111193174 A CN111193174 A CN 111193174A CN 202010028390 A CN202010028390 A CN 202010028390A CN 111193174 A CN111193174 A CN 111193174A
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- Prior art keywords
- bismuth telluride
- heterojunction
- saturable absorber
- nanosheets
- telluride heterojunction
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- 229910052797 bismuth Inorganic materials 0.000 title claims abstract description 158
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 title claims abstract description 158
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 title claims abstract description 149
- 239000006096 absorbing agent Substances 0.000 title claims abstract description 64
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000002135 nanosheet Substances 0.000 claims abstract description 100
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 13
- 150000003624 transition metals Chemical class 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 57
- 239000000835 fiber Substances 0.000 claims description 43
- 239000000243 solution Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 26
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 claims description 17
- 229920003081 Povidone K 30 Polymers 0.000 claims description 17
- 229910003069 TeO2 Inorganic materials 0.000 claims description 16
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 8
- 229910021578 Iron(III) chloride Inorganic materials 0.000 claims description 6
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- 239000002055 nanoplate Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 238000005411 Van der Waals force Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 239000011259 mixed solution Substances 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- 229910002899 Bi2Te3 Inorganic materials 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 45
- 239000013307 optical fiber Substances 0.000 description 41
- 230000010287 polarization Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 13
- 229920006254 polymer film Polymers 0.000 description 11
- 239000004205 dimethyl polysiloxane Substances 0.000 description 9
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 239000002998 adhesive polymer Substances 0.000 description 5
- 239000000047 product Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000011031 large-scale manufacturing process Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920006316 polyvinylpyrrolidine Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- -1 transition metal sulfides Chemical class 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 239000005371 ZBLAN Substances 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical group [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000012994 industrial processing Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
- H01S3/06716—Fibre compositions or doping with active elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06791—Fibre ring lasers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Lasers (AREA)
Abstract
Description
1 | 2 | 3 | 4 | |
搅拌时间 | 60min | 55min | 65min | 70min |
加热温度 | 180℃ | 185℃ | 175℃ | 170℃ |
保持时间 | 12h | 10h | 15h | 18h |
实施例1 | 实施例2 | 实施例3 | 实施例4 | |
PVP-K30 | 0.8g | 0.7g | 0.6g | 0.9g |
EG | 50ml | 45ml | 40ml | 55ml |
FeCl<sub>3</sub>·6H<sub>2</sub>O | 72mg | 68mg | 64mg | 76mg |
TeO<sub>2</sub> | 0.24g | 0.24g | 0.24g | 0.24g |
NaOH | 1g | 1g | 1g | 1g |
实施例1 | 实施例2 | 实施例3 | 实施例4 | |
加热温度 | 180℃ | 175℃ | 185℃ | 190℃ |
时间 | 24h | 24h | 24h | 24h |
Claims (10)
Priority Applications (1)
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CN202010028390.9A CN111193174B (zh) | 2020-01-10 | 2020-01-10 | 一种基于碲化铋异质结的可饱和吸收体及其制备方法和应用 |
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CN202010028390.9A CN111193174B (zh) | 2020-01-10 | 2020-01-10 | 一种基于碲化铋异质结的可饱和吸收体及其制备方法和应用 |
Publications (2)
Publication Number | Publication Date |
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CN111193174A true CN111193174A (zh) | 2020-05-22 |
CN111193174B CN111193174B (zh) | 2021-07-30 |
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CN202010028390.9A Active CN111193174B (zh) | 2020-01-10 | 2020-01-10 | 一种基于碲化铋异质结的可饱和吸收体及其制备方法和应用 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115149376A (zh) * | 2022-06-09 | 2022-10-04 | 深圳大学 | 基于碲-铋异质结的可饱和吸收体及其制备方法、激光器 |
CN115755245A (zh) * | 2022-11-28 | 2023-03-07 | 南方科技大学 | 一种可饱和吸收体及其制备方法与可饱和吸收体器件 |
Citations (7)
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US20090116798A1 (en) * | 2005-08-17 | 2009-05-07 | Alcatel Lucent | Optical guide including nanoparticles and manufacturing method for a preform intended to be shaped into such an optical guide |
CN104218443A (zh) * | 2014-08-20 | 2014-12-17 | 鲍小志 | 基于二维层状材料的实用化可饱和吸收器件及其制备方法 |
JP2016111219A (ja) * | 2014-12-08 | 2016-06-20 | 公立大学法人大阪府立大学 | 光伝導素子、テラヘルツ波発生装置、テラヘルツ波検出装置、テラヘルツ波発生方法およびテラヘルツ波検出方法 |
CN105896257A (zh) * | 2016-06-02 | 2016-08-24 | 深圳大学 | 一种异质结可饱和吸收镜及其制备方法、锁膜光纤激光器 |
CN105896258A (zh) * | 2016-06-16 | 2016-08-24 | 深圳大学 | 二维半导体可饱和吸收镜及其制备方法、脉冲光纤激光器 |
CN108199252A (zh) * | 2018-01-24 | 2018-06-22 | 深圳大学 | 可饱和吸收体及其制备方法和超快被动锁模激光器 |
CN109467060A (zh) * | 2019-01-13 | 2019-03-15 | 韩金玲 | 一种镉负载碲化铋纳米线的制备方法 |
-
2020
- 2020-01-10 CN CN202010028390.9A patent/CN111193174B/zh active Active
Patent Citations (7)
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US20090116798A1 (en) * | 2005-08-17 | 2009-05-07 | Alcatel Lucent | Optical guide including nanoparticles and manufacturing method for a preform intended to be shaped into such an optical guide |
CN104218443A (zh) * | 2014-08-20 | 2014-12-17 | 鲍小志 | 基于二维层状材料的实用化可饱和吸收器件及其制备方法 |
JP2016111219A (ja) * | 2014-12-08 | 2016-06-20 | 公立大学法人大阪府立大学 | 光伝導素子、テラヘルツ波発生装置、テラヘルツ波検出装置、テラヘルツ波発生方法およびテラヘルツ波検出方法 |
CN105896257A (zh) * | 2016-06-02 | 2016-08-24 | 深圳大学 | 一种异质结可饱和吸收镜及其制备方法、锁膜光纤激光器 |
CN105896258A (zh) * | 2016-06-16 | 2016-08-24 | 深圳大学 | 二维半导体可饱和吸收镜及其制备方法、脉冲光纤激光器 |
CN108199252A (zh) * | 2018-01-24 | 2018-06-22 | 深圳大学 | 可饱和吸收体及其制备方法和超快被动锁模激光器 |
CN109467060A (zh) * | 2019-01-13 | 2019-03-15 | 韩金玲 | 一种镉负载碲化铋纳米线的制备方法 |
Non-Patent Citations (1)
Title |
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HAORAN MU ET AL.: "Graphene-Bi2Te3 Heterostructure as Saturable Absorber for Short Pulse Generation", 《ACS PHOTONICS》 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115149376A (zh) * | 2022-06-09 | 2022-10-04 | 深圳大学 | 基于碲-铋异质结的可饱和吸收体及其制备方法、激光器 |
CN115755245A (zh) * | 2022-11-28 | 2023-03-07 | 南方科技大学 | 一种可饱和吸收体及其制备方法与可饱和吸收体器件 |
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