CN111192810A - Large-beam ion implanter dose offset method - Google Patents
Large-beam ion implanter dose offset method Download PDFInfo
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- CN111192810A CN111192810A CN201811357791.8A CN201811357791A CN111192810A CN 111192810 A CN111192810 A CN 111192810A CN 201811357791 A CN201811357791 A CN 201811357791A CN 111192810 A CN111192810 A CN 111192810A
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- pmac
- power supply
- motion
- linear
- ignition
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Links
- 238000000034 method Methods 0.000 title claims abstract description 10
- XEBWQGVWTUSTLN-UHFFFAOYSA-M phenylmercury acetate Chemical compound CC(=O)O[Hg]C1=CC=CC=C1 XEBWQGVWTUSTLN-UHFFFAOYSA-M 0.000 claims abstract description 23
- 238000001514 detection method Methods 0.000 claims abstract description 11
- 230000001502 supplementing effect Effects 0.000 claims abstract description 3
- 238000005468 ion implantation Methods 0.000 claims description 4
- 230000007246 mechanism Effects 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 description 12
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 238000002513 implantation Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000032671 dosage compensation Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000246 remedial effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a method for supplementing the sparking dose of a large-beam ion implanter, which comprises the following steps: the PMAC board card (1) ACC-24E2A PMAC shaft card (2) ignition detection board (3) linear motion control component (4), industrial computer (5), PMAC MACRO cabinet (6), grating scale (7), linear motor (8), driver (9) and power supply (10) are mainly characterized in that the PMAC board card (1) is responsible for data acquisition and instruction sending of the whole controller in the industrial computer (6), and the industrial computer (6) is provided with a WINDOWS operating system. ACC-24E2A PMAC spindle card (2) controls the motor motion in PMAC MACRO cabinet (6), ignition signal capture processing and power output on. The linear motion control assembly (4) comprises a linear motor (8), a grating ruler (7) and a driver (9) for controlling the motion of the linear module, and the ignition detection plate (3) monitors the ignition state of the power supply (10), records the motion history of the power supply and sends the actions of opening and closing the power supply. The linear module has two motion mechanisms: an upper limit (12) and a lower limit (11).
Description
Technical Field
The invention is applied to the problem of sparking (glitch) in the dose injection of the large-beam ion implanter, and can keep the accuracy degree of the ion injection dose to the maximum extent and improve the injection abnormity processing capability of the large-beam ion implanter.
Background
The large beam ion implantation machine is an important equipment in microelectronic manufacture and is characterized by that the large beam energy is relatively small. When the large-beam ion implanter is used for a long time, the large beam of ions easily causes charge accumulation and pollution inside the implanter, and ignition cannot be avoided under the condition, so that the position of ignition is required to be recorded, the power supply is cut off to stop injection, the reverse injection is carried out when the beam returns to be normal, and the power supply is also cut off when the beam moves to the position of the last ignition, so that the dose compensation during ignition is realized.
Disclosure of Invention
The invention discloses a method for supplementing the sparking dose of a large-beam ion implanter, which is mainly used for the implantation exception handling of the ion implanter and can keep the accuracy degree of the ion implantation dose to the maximum extent and improve the implantation exception handling capacity of the large-beam ion implanter.
The invention is realized by the following hardware: the device comprises a PMAC board card (1), an ACC-24E2A PMAC shaft card (2), an ignition detection board (3), a linear motion control component (4), an industrial personal computer (5), a PMAC MACRO case (6), a grating ruler (7), a linear motor (8), a driver (9) and a power supply (10).
The hardware of the invention is characterized in that a PMAC board card (1) is inserted into an industrial personal computer (6) to be responsible for data acquisition and instruction sending of the whole controller, and the industrial personal computer (6) is provided with a WINDOWS operating system. The ACC-24E2A PMAC shaft card (2) is inserted into a PMAC MACRO cabinet (6) to control the motion of a motor, the ignition signal capture process and the power output are turned on. The linear motion control assembly (4) comprises a linear motor (8) and a grating ruler (7), a driver (9) controls the motion of the linear module, and the ignition detection plate (3) monitors the ignition state of the power supply (10), records the motion history of the power supply and sends the actions of opening and closing the power supply. The linear module has two motion mechanisms: an upper movement limit (12) and a lower movement limit (11).
The process of the invention is characterized in that the position is captured when the ignition occurs, and the synchronous comparison output is used when the linear module moves to the ignition position in the opposite direction, namely, the power supply is turned off when the position where the ignition occurs is recorded when the ignition occurs, and the high level is synchronously output when the linear module moves to the position where the ignition occurs last time when the injection dosage is recovered, so that the power supply is turned off.
The invention has the following remarkable advantages:
1. the position capturing precision is high.
2. The dosage compensation precision is high.
3. The hardware architecture is simple.
Detailed Description
The present invention will be further described with reference to, but not limited to, fig. 1, fig. 2, fig. 3 and fig. 4.
1. When single injection starts, the initial movement direction is from the lower movement limit (11) to the upper movement limit (12), the ignition detection plate (3) detects the state of the power supply (10) in real time, and when ignition occurs, the ignition detection plate (3) sends the same signal to the power supply (10) and the ACC-24E2A PMAC shaft card (2) at the same time. The ignition signal is sent to the power supply (10) for instantly turning off the power supply (10), the signal is sent to the ACC-24E2A PMAC shaft card (2) for capturing the motion instant position of the linear module (4) when ignition occurs, and the motion instant position is recorded in the PMAC shaft card (1), and meanwhile, the linear template continues to move to the upper motion limit (12) according to the original motion direction, wherein as shown in figure 3, the injected area of the wafer is on, and the non-injected area is on.
2. When the ion implanter is recovered after sparking occurs, a power supply (10) is turned on first, the beam current of the ion implanter is adjusted to a set value, ion implantation is carried out again, the linear module (4) moves in the opposite direction, namely, the linear module moves from the upper movement limit (12) to the lower movement limit (11), when the linear module moves to the position where sparking is captured last time, the ACC-24E2A PMAC shaft card (2) sends a signal to the sparking detection plate (3) to turn off the power supply (10), and the motion module (4) continues to move to the lower movement limit (11). At this point, the entire wafer is fully implanted.
3. If no sparking occurs during a single injection, the next injection is performed. If the ignition occurs, the frequency and time of the ignition need to be counted by the upper computer so as to facilitate the maintenance of the ion implanter in the later period.
Drawings
FIG. 1 is a hardware block diagram of a dose remedial system;
FIG. 2 is a top and bottom labeled position diagram of the linear motor during dose implantation;
FIG. 3 is a graph of the distribution of implanted and non-implanted regions assuming a wafer is implanted from top to bottom;
FIG. 4 is a flow chart of the replenishment dose when sparking occurs.
The contents of the present patent have been described in detail with reference to specific embodiments thereof. Any obvious modifications to the disclosure herein disclosed which do not depart from the spirit of the disclosure herein will be readily apparent to those skilled in the art as a violation of the disclosure and the pertinent legal responsibility will be afforded thereto.
Claims (3)
1. A method for supplementing the sparking dose of a large-beam ion implanter comprises hardware: the device comprises a PMAC board card (1), an ACC-24E2A PMAC shaft card (2), an ignition detection board (3), a linear motion control component (4), an industrial personal computer (5), a PMAC MACRO case (6), a grating ruler (7), a linear motor (8), a driver (9) and a power supply (10). The method is characterized in that: the ignition detection plate (3) detects the state of the power supply (10) in real time, and when ignition occurs, the ignition detection plate (3) sends the same signals to the power supply (10) and the ACC-24E2A PMAC shaft card (2) at the same time. The signal is sent to the power supply (10) for instantly shutting down the power supply (10), the signal is sent to the ACC-24E2A PMAC shaft card (2) for capturing the motion instant position of the linear module (4) when the ignition occurs, and the motion instant position is recorded in the PMAC shaft card (1), and meanwhile, the linear template continues to move to the motion upper limit (12) according to the original motion direction, wherein the initial motion direction is assumed to be from the motion lower limit (11) to the motion upper limit (12). As shown in fig. 3, the implanted regions are above and the non-implanted regions are below.
2. The method for reigniting the dose of the large beam current ion implanter as claimed in claim 1, wherein after the strike occurs, when the ion implanter is recovered, the power supply (10) is turned on first, the beam current of the ion implanter is adjusted to a set value, the ion implantation is performed again, the linear module (4) moves in the opposite direction, i.e. from the upper movement limit (12) to the lower movement limit (11), when the linear module moves to the position where the strike was last captured, the ACC-24E2A PMAC shaft card (2) sends a signal to the strike detection board (3) to turn off the power supply (10), and the linear module (4) continues to move to the lower movement limit (11).
3. A method as claimed in claim 1, wherein the linear module (4) is moved in the opposite direction to perform the dose compensation when the ignition occurs.
Priority Applications (1)
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CN201811357791.8A CN111192810A (en) | 2018-11-15 | 2018-11-15 | Large-beam ion implanter dose offset method |
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CN201811357791.8A CN111192810A (en) | 2018-11-15 | 2018-11-15 | Large-beam ion implanter dose offset method |
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CN201811357791.8A Pending CN111192810A (en) | 2018-11-15 | 2018-11-15 | Large-beam ion implanter dose offset method |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1638015A (en) * | 2004-01-09 | 2005-07-13 | 应用材料有限公司 | Improvements relating to ion implantation |
WO2007111822A2 (en) * | 2006-03-22 | 2007-10-04 | Axcelis Technologies, Inc. | A method of ion beam control for glitch recovery |
CN101203932A (en) * | 2005-04-02 | 2008-06-18 | 瓦里安半导体设备公司 | Methods and apparatus for transient state interference recovery in stationary-beam ion implantation process using fast ion beam control |
CN103026450A (en) * | 2010-07-29 | 2013-04-03 | 艾克塞利斯科技公司 | Versatile beam glitch detection system |
CN104022007A (en) * | 2014-06-16 | 2014-09-03 | 北京中科信电子装备有限公司 | Device and method for avoiding ion beam glitches |
-
2018
- 2018-11-15 CN CN201811357791.8A patent/CN111192810A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1638015A (en) * | 2004-01-09 | 2005-07-13 | 应用材料有限公司 | Improvements relating to ion implantation |
CN101203932A (en) * | 2005-04-02 | 2008-06-18 | 瓦里安半导体设备公司 | Methods and apparatus for transient state interference recovery in stationary-beam ion implantation process using fast ion beam control |
WO2007111822A2 (en) * | 2006-03-22 | 2007-10-04 | Axcelis Technologies, Inc. | A method of ion beam control for glitch recovery |
CN103026450A (en) * | 2010-07-29 | 2013-04-03 | 艾克塞利斯科技公司 | Versatile beam glitch detection system |
CN104022007A (en) * | 2014-06-16 | 2014-09-03 | 北京中科信电子装备有限公司 | Device and method for avoiding ion beam glitches |
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