CN111183553A - 芯片结构 - Google Patents

芯片结构 Download PDF

Info

Publication number
CN111183553A
CN111183553A CN201880053838.3A CN201880053838A CN111183553A CN 111183553 A CN111183553 A CN 111183553A CN 201880053838 A CN201880053838 A CN 201880053838A CN 111183553 A CN111183553 A CN 111183553A
Authority
CN
China
Prior art keywords
layer
applications
chip structure
chip
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201880053838.3A
Other languages
English (en)
Inventor
阿赫迈特·阿克塔格
穆拉特·埃达尔·达格德伦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aselsan Elektronik Sanayi ve Ticaret AS
Original Assignee
Aselsan Elektronik Sanayi ve Ticaret AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aselsan Elektronik Sanayi ve Ticaret AS filed Critical Aselsan Elektronik Sanayi ve Ticaret AS
Publication of CN111183553A publication Critical patent/CN111183553A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S13/00—Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
    • G01S13/02—Systems using reflection of radio waves, e.g. primary radar systems; Analogous systems
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
    • G01S7/03—Details of HF subsystems specially adapted therefor, e.g. common to transmitter and receiver
    • G01S7/032—Constructional details for solid-state radar subsystems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S13/00—Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
    • G01S13/02—Systems using reflection of radio waves, e.g. primary radar systems; Analogous systems
    • G01S2013/0236—Special technical features
    • G01S2013/0245—Radar with phased array antenna
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
    • G01S7/027—Constructional details of housings, e.g. form, type, material or ruggedness
    • G01S7/028—Miniaturisation, e.g. surface mounted device [SMD] packaging or housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6616—Vertical connections, e.g. vias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/141—Disposition
    • H01L2224/1412—Layout
    • H01L2224/1415—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
    • H01L2224/14152—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry being non uniform, i.e. having a non uniform pitch across the array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/1033—Gallium nitride [GaN]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/141—Analog devices
    • H01L2924/142—HF devices
    • H01L2924/1421—RF devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

在本发明中，提供了一种适用于雷达应用的芯片结构。所述芯片结构包括至少一个镓基第一层(1)，以执行RF应用；至少一个镓基第二层(2)，置于所述第一层(1)上，以执行数字应用；位于第一层(1)和第二层(2)之间的至少两个铜基柱(3)，在第一层(1)和第二层(2)之间提供电连接，并确保第一层(1)和第二层(2)之间存在安全距离。

Description

芯片结构
技术领域
本发明涉及一种特别适用于相控阵雷达应用的芯片结构。
背景技术
相控阵雷达由多个接收和/或发射模块和天线组成，必须由波长施加的一定距离将它们隔开。根据操作频段，模块之间的距离必须很小。在相控阵雷达应用中，几乎同时执行不同的任务(例如发送信号、接收信号、处理信号等)。由于每个微波模块的可用空间有限，并且分配的任务数量很高，因此模块中使用的芯片需要很小的尺寸。此外，芯片的脆裂性质在处理上限制了最大的芯片尺寸。大多数硅酮基半导体技术兼容模拟、数字和RF电路，因此可以形成同时具有模拟、数字和RF电路的硅酮基紧凑型多通道芯片。但是，与其他半导体技术(如砷化镓)相比，硅基技术的某些关键RF性能受到限制(噪声系数，输出功率等)。尽管砷化镓基技术具有更好的RF性能，但其完整性低于硅酮基技术，这使芯片尺寸增加到了不可接受的水平。
发明内容
在本发明中，提供了一种适用于相控阵雷达应用的芯片结构。所述芯片结构包括至少一个镓基第一层，以执行RF应用；至少一个镓基第二层，置于所述第一层上，以执行数字应用；位于第一层和第二层之间的至少两个铜基支柱，在第一层和第二层之间提供电连接，并确保第一层和第二层之间存在安全距离，以防止任何非期望的RF耦合。
在本申请中，芯片结构具有多层，用于执行不同应用(即，RF应用和数字应用)。在第一层中以高性能执行RF应用，在第二层中执行数字应用。因此，使用本申请的芯片结构，以更小的占用空间执行RF应用和数字应用。
发明目的
本发明的目的是提供一种既执行数字应用又执行RF应用的芯片结构。
本发明的另一个目的是提供一种紧凑的芯片结构，在数字和RF应用中具有高性能。
本发明的另一个目的是提供一种适用于相控阵雷达应用的芯片结构。
附图说明
图1是本申请的芯片结构的透视图。
图中所示的所有部件均单独分配了附图标号，这些标号的相应术语如下：
第一层(1)
第二层(2)
支柱(3)
具体实施方式
在雷达应用中，数字电路和RF电路需要一起使用。为了在单个芯片上执行多通道数字和RF程序，通常使用硅酮基结构。然而，由于硅酮基结构的RF性能受到限制，因此所述单个芯片结构的整体性能受到限制。因此，本发明提供了执行数字和RF应用的芯片结构。
图1示出了本发明的芯片结构的透视图。所述芯片结构包括至少一个镓基(例如砷化镓-GaAs，氮化镓-GaN等)第一层(1)，以执行RF应用；至少一个镓基(例如砷化镓-GaAs，氮化镓-GaN等)第二层(2)，置于所述第一层(1)上，以执行数字应用；位于第一层(1)和第二层(2)之间的至少两个铜基支柱(3)，在第一层(1)和第二层(2)之间提供电连接，并确保第一层(1)和第二层(2)之间存在安全距离。
在本发明的示例性实施例中，砷化镓基第一层(1)连接至控制单元，用于发送/接收信号/命令。由第一层(1)接收的信号/命令通过铜基支柱(3)发送到第二层(2)。因此，在第一层(1)和第二层(2)之间提供了安全的电连接。此外，所述支柱(3)确保在第一层(1)和第二层(2)之间存在安全距离。详细地，在第一层(1)的设计过程中，假设在第一层(1)上方仅存在空气。因此，为了执行期望的RF功能，相应地确定第一层(1)的参数。然而，当将第二层(2)置于第一层(1)之上时，第一层(1)的RF功能可能受到影响。为了避免这种情况，在第一层(1)和第二层(2)之间必须存在安全距离。由于所述支柱(3)确保了所述安全距离，所以根据本发明，第一层(1)的RF性能不受第二层(2)的影响。
在本申请的优选实施例中，每个所述支柱(3)的长度在30-50um之间(优选为40um)。研究表明，当第一层(1)和第二层(2)之间的距离保持在50um以上时，第一层(1)的RF性能受到第二层(2)的影响程度最低。
在本申请的另一优选实施例中，第二层(2)的部件面向第一层(1)。由于所述结构，在第一层(1)和第二层(2)之间提供了更容易和更可靠的连接。
在本申请的另一优选实施例中，第一层(1)为四通道芯片的形式。类似地，第二层(2)优选为四通道芯片的形式。因此，在本实施例中，芯片结构具有四个通道。由于本申请的芯片结构的多层结构，四通道芯片具有较小的尺寸。
在本申请中，芯片结构具有多层，用于执行不同应用(即，RF应用和数字应用)。在第一层(1)中以高性能执行RF应用，在第二层(2)中执行数字应用。因此，使用本申请的芯片结构，以更小的占用空间执行RF应用和数字应用。

Claims (6)

1.一种适用于雷达应用的芯片结构，其特征在于，包括：
-至少一个镓基第一层(1)，以执行RF应用；
-至少一个镓基第二层(2)，置于所述第一层(1)上，以执行数字应用；
-位于所述第一层(1)和所述第二层(2)之间的至少两个铜基支柱(3)，在所述第一层(1)和第二层(2)之间提供电连接，并确保所述第一层(1)和第二层(2)之间存在安全距离。
2.根据权利要求1所述的芯片结构，其特征在于：所述支柱(3)的长度在30-50um之间。
3.根据权利要求1所述的芯片结构，其特征在于：所述支柱(3)的长度为40um。
4.根据权利要求1所述的功率放大器系统，其特征在于：所述第二层(2)的部件面向所述第一层(1)。
5.根据权利要求1所述的功率放大器系统，其特征在于：第一层(1)为四通道芯片的形式。
6.根据权利要求1或5所述的功率放大器系统，其特征在于：第二层(2)为四通道芯片的形式。
CN201880053838.3A 2018-01-30 2018-01-30 芯片结构 Pending CN111183553A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/TR2018/050032 WO2019151960A1 (en) 2018-01-30 2018-01-30 A chip structure

Publications (1)

Publication Number Publication Date
CN111183553A true CN111183553A (zh) 2020-05-19

Family

ID=67479446

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880053838.3A Pending CN111183553A (zh) 2018-01-30 2018-01-30 芯片结构

Country Status (4)

Country Link
US (1) US20200118910A1 (zh)
EP (1) EP3747050A4 (zh)
CN (1) CN111183553A (zh)
WO (1) WO2019151960A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111722189A (zh) * 2020-06-05 2020-09-29 东方红卫星移动通信有限公司 一种多波束毫米波相控阵芯片及制造方法

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262794A (en) * 1991-07-18 1993-11-16 Communications Satellite Corporation Monolithic gallium arsenide phased array using integrated gold post interconnects
US6002375A (en) * 1997-09-02 1999-12-14 Motorola, Inc. Multi-substrate radio-frequency circuit
US20030155651A1 (en) * 2000-09-11 2003-08-21 Xytrans, Inc. Microwave monolithic integrated circuit package
US20040130490A1 (en) * 2001-12-14 2004-07-08 Single Ku-Bank Multi-Polarization Gallium Arsenide Transmit Chip Single ku-band multi-polarization gallium arsenide transmit chip
CN1853354A (zh) * 2003-09-17 2006-10-25 摩托罗拉公司 具有堆叠单芯片结构的无线接收机
CN101385149A (zh) * 2006-02-15 2009-03-11 德克萨斯仪器股份有限公司 多管芯集成电路封装
US20110031627A1 (en) * 2009-08-07 2011-02-10 International Business Machines Corporation Reducing Crosstalk In The Design Of Module Nets
CN202103042U (zh) * 2011-01-27 2012-01-04 思亚诺移动芯片有限公司 带有整体隔离层的堆叠式数字和射频片上系统
CN102723412A (zh) * 2012-01-18 2012-10-10 许并社 具有埋入式银纳米粒子的白光led芯片结构
CN103094261A (zh) * 2011-09-16 2013-05-08 阿尔特拉公司 电子组件装置和关联方法
US20130207266A1 (en) * 2012-02-10 2013-08-15 Chang-Hwang Hua Copper Interconnect for III-V Compound Semiconductor Devices
CN103283023A (zh) * 2010-12-20 2013-09-04 英特尔公司 封装衬底中具有集成无源器件的集成数字和射频片上系统器件及其制造方法
CN105006507A (zh) * 2015-07-03 2015-10-28 山东浪潮华光光电子股份有限公司 GaAs基发光二极管芯片上P电极的制备方法
CN105789163A (zh) * 2016-03-23 2016-07-20 宜确半导体（苏州）有限公司 射频前端芯片集成模块和射频前端芯片集成方法
CN105957937A (zh) * 2016-06-27 2016-09-21 山东浪潮华光光电子股份有限公司 一种GaAs基发光二极管芯片及其切割方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7508267B1 (en) * 2007-09-28 2009-03-24 Rockwell Collins, Inc. GaN based digital controlled broadband MMIC power amplifier
EP2104182A1 (en) * 2008-01-17 2009-09-23 Raysat, Inc. Integrated antenna phased array control device

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262794A (en) * 1991-07-18 1993-11-16 Communications Satellite Corporation Monolithic gallium arsenide phased array using integrated gold post interconnects
US6002375A (en) * 1997-09-02 1999-12-14 Motorola, Inc. Multi-substrate radio-frequency circuit
US20030155651A1 (en) * 2000-09-11 2003-08-21 Xytrans, Inc. Microwave monolithic integrated circuit package
US20040130490A1 (en) * 2001-12-14 2004-07-08 Single Ku-Bank Multi-Polarization Gallium Arsenide Transmit Chip Single ku-band multi-polarization gallium arsenide transmit chip
CN1853354A (zh) * 2003-09-17 2006-10-25 摩托罗拉公司 具有堆叠单芯片结构的无线接收机
CN101385149A (zh) * 2006-02-15 2009-03-11 德克萨斯仪器股份有限公司 多管芯集成电路封装
US20110031627A1 (en) * 2009-08-07 2011-02-10 International Business Machines Corporation Reducing Crosstalk In The Design Of Module Nets
CN103283023A (zh) * 2010-12-20 2013-09-04 英特尔公司 封装衬底中具有集成无源器件的集成数字和射频片上系统器件及其制造方法
CN202103042U (zh) * 2011-01-27 2012-01-04 思亚诺移动芯片有限公司 带有整体隔离层的堆叠式数字和射频片上系统
CN103094261A (zh) * 2011-09-16 2013-05-08 阿尔特拉公司 电子组件装置和关联方法
CN102723412A (zh) * 2012-01-18 2012-10-10 许并社 具有埋入式银纳米粒子的白光led芯片结构
US20130207266A1 (en) * 2012-02-10 2013-08-15 Chang-Hwang Hua Copper Interconnect for III-V Compound Semiconductor Devices
CN105006507A (zh) * 2015-07-03 2015-10-28 山东浪潮华光光电子股份有限公司 GaAs基发光二极管芯片上P电极的制备方法
CN105789163A (zh) * 2016-03-23 2016-07-20 宜确半导体（苏州）有限公司 射频前端芯片集成模块和射频前端芯片集成方法
CN105957937A (zh) * 2016-06-27 2016-09-21 山东浪潮华光光电子股份有限公司 一种GaAs基发光二极管芯片及其切割方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111722189A (zh) * 2020-06-05 2020-09-29 东方红卫星移动通信有限公司 一种多波束毫米波相控阵芯片及制造方法
CN111722189B (zh) * 2020-06-05 2023-01-10 东方红卫星移动通信有限公司 一种多波束毫米波相控阵芯片及制造方法

Also Published As

Publication number Publication date
WO2019151960A1 (en) 2019-08-08
EP3747050A1 (en) 2020-12-09
EP3747050A4 (en) 2020-12-09
US20200118910A1 (en) 2020-04-16

Similar Documents

Publication Publication Date Title
Yan et al. Performance, power, and area design trade-offs in millimeter-wave transmitter beamforming architectures
Herd et al. The evolution to modern phased array architectures
US10056922B1 (en) Radio frequency device modules and methods of formation thereof
US6738017B2 (en) Modular phased array with improved beam-to-beam isolation
US20140009364A1 (en) Antenna array connectivity layout and a method for designing thereof
CN107850663B (zh) 发送模块、具备该发送模块的阵列天线装置以及发送装置
US6897806B2 (en) Method and device for scanning a phased array antenna
US20150280650A1 (en) Modular spatially combined ehf power amplifier
WO2006033767A1 (en) Transmitting and receiving radio frequency signals using an active electronically scanned array
JP5871647B2 (ja) 減結合回路
US20130147657A1 (en) Radar apparatus and method of assembling the same
CN111183553A (zh) 芯片结构
Gryglewski et al. A 10W GaN based X-band T/R module for AESA
US9831906B1 (en) Active electronically scanned array with power amplifier drain bias tapering
US12034468B2 (en) Antenna wireless device
US20150256128A1 (en) Multi-port amplifier and method for controlling thereof
KR102215882B1 (ko) 빔포밍을 수행하기 위한 다중모드 증폭기 및 이를 포함하는 전자 장치
KR101205720B1 (ko) 통신 시스템에서 신호 송수신 장치
Navarro Heterogeneously-integrated phased-array antennas for line-of-sight (LOS) communications and sensor applications
Rieger et al. SMTR® module-Evolution towards airborne applications
KR20180047680A (ko) 초고주파 저손실 전력 분배기/합성기 및 이를 포함하는 전력 증폭기
US20240250424A1 (en) Multi-chip multi-channel beamformer module with interposer passives
CN219893304U (zh) 可重构射频开关电路
CN211879584U (zh) 功率合成模块和功率合成电路
JP5925622B2 (ja) アンテナ装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20200519

WD01 Invention patent application deemed withdrawn after publication