CN111180567A - Carrier and light emitting device - Google Patents

Carrier and light emitting device Download PDF

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Publication number
CN111180567A
CN111180567A CN202010107215.9A CN202010107215A CN111180567A CN 111180567 A CN111180567 A CN 111180567A CN 202010107215 A CN202010107215 A CN 202010107215A CN 111180567 A CN111180567 A CN 111180567A
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China
Prior art keywords
substrate
light
dam
carrier
emitting device
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CN202010107215.9A
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Chinese (zh)
Inventor
申小飞
曹永革
李英魁
麻朝阳
文子诚
王恩哥
王充
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Institute of Physics of CAS
Songshan Lake Materials Laboratory
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Songshan Lake Materials Laboratory
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Priority to CN202010107215.9A priority Critical patent/CN111180567A/en
Publication of CN111180567A publication Critical patent/CN111180567A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

A carrier and a light emitting device belong to the field of illumination. The carrier includes an integrally formed substrate, and it includes opposing top and bottom surfaces. The substrate is provided with a dam protruding from a top surface, the top surface is provided with an inner area and an outer area on two sides of the dam, the inner area is provided with a plurality of convex columns protruding from the top surface, and each convex column is provided with a groove protruding from a bottom surface. The substrate has an outstanding heat conduction effect, so that thermal quenching can be effectively avoided after the substrate is applied to the light-emitting diode.

Description

Carrier and light emitting device
Technical Field
The application relates to the field of lighting, in particular to a carrier and a light-emitting device.
Background
Chip On Board (COB) is a Chip On Board (Chip On Board) in which a bare Chip is adhered to an interconnection substrate by a conductive or non-conductive adhesive and then electrically connected by wire bonding. The light emitting diode based on the plate chip is also called as a COB LED, so that the LED is characterized by wide application.
The COB LED may be implemented in the following two ways.
Firstly, the light-emitting chip is arranged on the circuit layer of the substrate, and then a circle of plastic packaging material is pressed on the periphery of the light-emitting chip to form a dispensing area of fluorescent powder glue.
Secondly, on the substrate, a circle of white silica gel is drawn as an enclosure dam through a dispenser, and then the LED chips are arranged in the area in the enclosure dam and the fluorescent powder glue is dispensed.
With the development of semiconductor lighting devices, light sources gradually evolve toward high power and high luminous flux density. From the perspective of cost and application, the integrated COB package is more suitable for the next generation of high power and high optical throughput package structure. However, high power and high luminous flux density can lead to problems of the fluorescent material and heating of the fluorescent material during the conversion process. Only by solving the heating problem, the popularization of semiconductor high-power and high-luminous-flux-density illumination can be further promoted, the production and the use of mercury-containing lamps are reduced, and the ecological environment is protected.
Disclosure of Invention
In order to solve the problem that the existing light-emitting diode is poor in heat resistance, the application provides a carrier and a light-emitting device.
The application is realized as follows:
in a first aspect, embodiments of the present application provide a carrier for a light emitting diode, the carrier comprising an integrally formed substrate comprising opposing top and bottom surfaces;
the substrate is provided with a dam protruding from a top surface, the top surface has an inner area and an outer area on both sides of the dam, the inner area has a plurality of posts protruding from the top surface, and each post has a groove provided from a bottom surface.
In some optional examples, the dam is provided with blind holes from the bottom surface; and/or the box dam is provided with a through hole which is communicated with the inner side area and the outer side area.
In some alternative examples, the top surface is a mirror surface that is reflective; and/or the substrate is made of heat conducting materials.
In a second aspect, embodiments of the present application provide a light emitting device, including:
a carrier;
a fluorescent material bonded to the substrate through the dam and covering the inner region;
a light emitting chip disposed in an inner region of a top surface of the substrate;
the conducting wire is used for connecting the light-emitting chip and leading out the electrode;
the insulating layer covers the outer side area of the substrate;
and the circuit layer covers the insulating layer, is provided with a connecting point for an external circuit, and is electrically connected with the electrode.
In some alternative examples, the tops of all the posts are in contact with the plate-shaped fluorescent material.
In some alternative examples, the phosphor material is a fluorescent ceramic and comprises cerium-doped yttrium aluminum garnet. The molecular formula of the cerium-doped yttrium aluminum garnet is Y3Al5O12:xCe3+Wherein x is a real number, and x is more than 0 and less than or equal to 0.09.
In some alternative examples, the fluorescent material is plate-shaped.
Has the advantages that:
the light emitting device in the example has good heat dissipation performance by improving the carrier structure and the like. Wherein, the fluorescent material can be selected from heat-resistant and heat-conductive materials; the carrier structure is integrated and has a channel, so that the carrier structure has better air tightness and is easier to dissipate heat during installation, thereby avoiding thermal quenching.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a schematic structural diagram of a COB LED device fabricated by the inventor;
FIG. 2 is a schematic diagram of a basic structure of a carrier according to an embodiment of the present disclosure;
fig. 3 is a schematic cross-sectional structure diagram of a light emitting device according to an embodiment of the present disclosure;
fig. 4 is a schematic top view of the light emitting device of fig. 3;
fig. 5 shows an exploded view of the light emitting device of fig. 3;
fig. 6 shows a flow chart of the fabrication of the light emitting device in fig. 3.
Icon: 22-a conductive line layer; 23-organic glue box dam; 24-organic glue mixed fluorescent powder; 25-gold wire; 26-a light emitting chip; 27-a substrate; 300-a substrate; 301-bottom surface; 302-a top surface; 303-box dam; 3031-a notch; 304-convex column; 305-a groove; 306-blind hole; 307-installation space; 308-step; 400-a light emitting device; 1-a fluorescent material; 3-a line layer; 4-an insulating layer; 6-a light emitting chip; 7-a pad; 17-electrically conductive wires.
Detailed Description
In the present application, all the embodiments, implementations, and features of the present application may be combined with each other without contradiction or conflict. In the present application, conventional equipment, devices, components, etc. are either commercially available or self-made in accordance with the present disclosure. In this application, some conventional operations and devices, apparatuses, components are omitted or only briefly described in order to highlight the importance of the present application.
COB LED refers to a light emitting diode device in which a chip is directly bonded and packaged on an entire substrate. The device has a plurality of LED chips on a substrate and is packaged by being integrated together. The COB LED can be used to solve the problem of manufacturing a high-power LED lamp by a low-power chip, and thus is widely applied to lamps such as a bulb, a spot lamp, a down lamp, a fluorescent lamp, a street lamp, and an industrial and mining lamp.
For the related research, the inventors fabricated a COB LED having a structure as shown in fig. 1. The LED packaging structure comprises a conductive circuit layer 22, an organic glue dam 23, organic glue mixed fluorescent powder 24, gold wires 25, a light emitting chip 26 and a substrate 27. The light emitting chip 26 is disposed on the substrate 27, the organic glue dam 23 is disposed on the periphery of the light emitting chip 26, and the organic glue mixed phosphor 24 covers the substrate 27 and also covers the light emitting chip 26. The light emitting chips 26 are electrically connected to each other by gold wires 25. After all the light emitting chips 26 are connected, the conductive circuit layer 22 is connected at both ends to serve as a contact point for an external power source.
In practical tests, the COB LED described above showed at least the following problems:
1. the heat dissipation performance is poor.
2. The light emitting effect is not good.
3. The service life is short.
4. The airtightness is poor.
As a result of research and analysis, the inventors considered that the cause of the above problems is related to the following factors.
1. The LED chips are all located on the surface of the substrate, and no reflecting layer is arranged, so that the light emitting effect is poor.
2. The adhesion between the pressed plastic package material, the lead frame and the substrate is poor, or glue leakage and other phenomena occur, moisture and harmful gas in the environment easily permeate into the package body, and the service life of the LED is shortened.
3. The conventional integrated COB LED package has the problems that the fluorescent material cannot dissipate heat, a heat dissipation channel is not available, and the air tightness is poor.
In addition, some existing COB LEDs have LED chips that are not in direct contact with the substrate, and therefore, heat generated by the LED chips emitting light is not easily dissipated.
In view of the above, the inventor tries to solve the problems of the existing light source packaging technology that heat is easy to gather, heat resistance is poor, air tightness is poor, and moisture absorption is easy to cause light attenuation.
In combination with the above-described research and findings in practice, the inventors believe that the problems that cause quenching and burning of the fluorescent material will be expected to be eliminated by the improvement in the fluorescent material, the structure, and also contribute to solving the airtightness and hygroscopicity of the semiconductor light source COB package, thereby avoiding the occurrence of light attenuation and lamp death.
Thus, in the examples, the materials of the phosphor material are selected for improvement, as well as the substrate structure is selected for improvement. In general, in some examples, improvements in the present solution relate primarily to the following aspects:
1. and selecting a high-heat-conductivity mirror aluminum substrate, and arranging a circuit on the mirror aluminum as required.
2. And designing a stamping die according to the size of the box dam required by the light source and the quantity of the heat conduction salient points.
3. And placing the semiconductor light-emitting chip according to the wiring requirement.
4. The semiconductor chips are electrically connected using ultrasonic bonding techniques.
5. And firing the fluorescent material according to the light color requirement.
6. And arranging a weldable layer on the fluorescent material according to the position requirement.
7. And sealing the cover with fluorescent welding fluorescent material.
Practice proves that through the implementation of the improvement, the light conversion material in the semiconductor lighting device is high-temperature resistant and does not generate heat quenching, and because of an effective and smooth heat dissipation channel, the fluorescent material does not generate heat accumulation during working, and the conversion efficiency is greatly improved. The box dam has good air tightness and no moisture absorption, can effectively prevent moisture and sulfur-containing substances from entering a light-emitting area, and prolongs the service life of a light source.
The following will describe the relevant products in more detail in the examples.
In this application, an improvement lies in the base plate structure to COB LED. In an example, a carrier is proposed based thereon. The carrier includes a base plate 300 integrally formed therewith, and is structured as shown in fig. 2. Various components and features of the LED are attached to and defined by the substrate 300. As the name implies, the substrate 300 has a plate shape, for example, a rectangular plate having a length and a width greater than a thickness (for example, a thickness of 1cm, a width and a length of 10 cm). In other examples, the base plate 300 has a plate shape and is a circular plate. Generally, the LED light source has a larger plane structure, so that LED chips with the number as much as possible or preset number can be loaded and used as a light emitting surface. The substrate is usually a flat plate in view of manufacturing process, and for a case with special requirements, the substrate can be laid out in a plurality of substrates as required by reducing the size of the substrate, such as a curved surface.
The substrate 300 has opposite top and bottom surfaces 302 and 301 arranged in a thickness direction. The top surface 302 and the bottom surface 301 are provided with different modified structures, respectively. Wherein the substrate 300 is convexly provided with a dam 303 on the top surface 302. In consideration of the characteristics of the LED wiring, the dam 303 is provided with a through hole communicating the inner region and the outer region, or may be a notch 3031 (which may be disclosed in a later part of the drawings). Thus, the wires (hereinafter, referred to again as conductive wires) connecting the light emitting chips 6 can be connected to the peripheral wiring (hereinafter, referred to again as wiring layer) on the substrate through the notches, and the positive and negative electrodes (such as pads) connected to the power supply can be provided by the peripheral wiring.
The top surface 302 has an inboard region and an outboard region (not shown) on either side of the distribution box dam 303. The inner region has a plurality of posts 304 (3 shown) disposed protruding from the top surface 302, each post 304 disposed with a groove 305 from the bottom surface 301.
Thus, in the inner region of the top surface, between the posts 304 and the dam 303 are arranged as the mounting space 307 for the LED chip. The groove 305 corresponding to the convex pillar 304 can be used as a heat dissipation channel for dissipating heat generated by the LED chip. Alternatively, the top of the stud 304 is in contact with the bottom of the phosphor 1, as shown in fig. 3, based on the need to dissipate heat or promote thermal conduction.
Further, the dam may be designed according to the selection, for example, the dam 303 is provided with a blind hole 306 from the bottom surface 301, and the blind hole 306 may also be used as a heat dissipation channel. Still further, the extension depth of the blind hole may also be defined, for example extending to a major part of the height of the dam, for example 1/3 or 2/3 or 3/4, etc. Generally, it would be advantageous to extend the blind hole above the plane of the top of the heat-generating chip (as shown in FIG. 3) for heat dissipation.
In addition, to facilitate and facilitate heat dissipation, the substrate may be made of a heat conductive material, such as a metal material, and in an example, the substrate may be made of an aluminum material. In order to improve the light extraction rate of the LED light emitting chip, the top surface 302 of the substrate 300 may be modified, for example, configured as a mirror surface, so that it has higher reflection performance. This may be accomplished by sanding and polishing the top surface of the substrate. The mirror surface of the light reflection can be arranged in the inner region of the top surface, while optionally no mirror surface is formed in the outer region of the top surface.
Based on the above improvement, the advantages of fluorescent heat resistance, thermal conductivity, substrate heat dissipation, light reflection, and sealing performance can be obtained, and therefore, the light emitting device 400, i.e., the LED based on the COB package process, can be manufactured in a matching manner. By selecting the color of the light emitting chip in the light emitting device 400 and the selection of the fluorescent material, the emission of white light can be realized in combination.
For example, the first method: yellow fluorescent powder capable of being excited by blue light is coated on the blue LED chip. The blue light emitted by the LED chip and the yellow light emitted by the fluorescent powder are complemented to form white light.
The second method comprises the following steps: the blue LED chip is coated with green and red fluorescent powders. The blue light emitted by the LED chip is compounded with the green light and the red light emitted by the fluorescent powder to obtain white light.
The third method comprises the following steps: the purple light or ultraviolet light LED chip is coated with phosphor powder with three primary colors or multiple colors. The long-wave ultraviolet light (370nm-380nm) or the purple light (380nm-410nm) emitted by the LED chip is used for exciting the fluorescent powder to realize white light emission.
The structure of the light emitting device 400 can be seen in fig. 3, 4 and 5.
As shown, the light emitting device 400 includes a carrier (shown as a substrate 300), a fluorescent material 1, a circuit layer 3, an insulating layer 4, a light emitting chip 6, and a conductive line 17.
Wherein the fluorescent material 1 is bonded to the substrate 300 by the dam 303 and covers an inner area of the top surface 302 (area surrounded by the dam). The dam 303 may be provided with a step 308 for supporting the fluorescent material 1 in consideration of reducing the thickness of the light emitting device. Since both the fluorescent material and the substrate are thermally conductive, it may be considered that the top of the stud 304 is in contact (abutting) with the fluorescent material when the light emitting device is constructed. Further, the both can be tightly combined, thereby improving airtightness.
The light emitting chip 6 is disposed in an inner region of the top surface of the substrate, i.e., the mounting space 307 shown in fig. 2. The mounting density of the light emitting chips 6 can be freely selected without particular limitation.
Conductive line 17 may be made of gold wire to reduce heat loss and improve conductivity. For a substrate having a large area, a plurality of light emitting chips 6 may be provided, and the respective light emitting chips 6 may be connected in series and parallel through the conductive line 17, and an electrode may be led out.
The insulating layer 4 covers the outer region of the substrate 300. For example, it may be formed by removing a portion of the inner region through a square or rectangular plate. When assembling, the hollow part is sleeved on the dam of the substrate.
The circuit layer 3 covers the insulating layer 4. The circuit layer 3 is provided with connection points (such as bonding pads 7) for external circuit, and the connection points are electrically connected with the electrodes. The wiring layer 3 may have a substantially similar profile configuration to the insulating layer 4. Thus, the wiring layer and the insulating layer may be arranged in a layered manner.
The light-emitting device 400 can be manufactured by the flow shown in fig. 6.
In the first step, a mirror-finished aluminum plate material is provided as a substrate material.
And secondly, sequentially superposing the insulating layer and the circuit layer on the surface of the mirror aluminum, performing gold plating (corrosion prevention) operation on the circuit layer, and then stamping by adopting a die, so that the insulating layer and the circuit layer are combined on the mirror aluminum, and simultaneously pressing the mirror aluminum into various structures such as grooves, blind holes and the like
And thirdly, arranging (such as welding) a dam and a convex column (bump) at a selected position of the pressed mirror aluminum, fixing the light-emitting chip at a selected gap, and electrically connecting the light-emitting chip through a conducting wire.
And fourthly, welding the fluorescent material manufactured by the powder metallurgy sintering process on the dam through the arranged welding piece to finish the capping operation.
As a brief exemplary description, the fluorescent material may be obtained in the following manner.
The choice of a fluorescent material that is not susceptible to thermal damage is clearly beneficial to the lifetime of a light emitting device such as an LED lamp. Therefore, in selecting a fluorescent material, it is desirable to have a higher thermal conductivity to transfer heat to reduce heat accumulation; it is also desired to have high heat resistance by itself. I.e., the fluorescent material has both heat resistance and thermal conductivity, a fluorescent ceramic is given as an example. Compared with the existing fluorescent powder glue mixture, the thermal conductivity coefficient of the fluorescent ceramic is higher than that of the fluorescent powder glue; ceramic 8-9W/m.K; silica gel 0.2-0.25W/m.K.
In an alternative embodiment, the fluorescent ceramic is cerium-doped yttrium aluminum garnet and has the formula Y3Al5O12:xCe3 +(also can be abbreviated as YAG: Ce), wherein x is a real number, and x is more than 0 and less than or equal to 0.09. The value of x can also be 0.01-0.07, or 0.03-0.05, and so on.
Wherein x represents a doping ratio of cerium with respect to other elements. The doping proportion can be controlled by controlling the proportion of the raw materials for manufacturing the fluorescent ceramic. The phosphor material is selected to be made plate-like in the example based on practical use and device structure considerations, as shown in fig. 3. Of course, it should be noted that the phosphor material may also be made in other shapes, such as an arc (illustratively, a sphere), which is not specifically limited in this application. Based on higher requirements, the fluorescent material can be modified to have a better use profile. For example by cutting, grinding, polishing.
In order to make the application easier for the person skilled in the art to carry out, an alternative solution is proposed in the examples for making the aforementioned fluorescent ceramics.
Sintering the ceramic raw material powder and the auxiliary agent under the condition of mixing. Wherein the ceramic raw material powder comprises Al2O3、Y2O3And CeO2The auxiliary agent comprises MgO or SiO2Or MgO and SiO2A mixture of (a). The amount of the adjuvant is specifically controlled to avoid adverse effects thereof. In the examples, the amount of the auxiliary agent is greater than 0 and not more than 3%, such as 0.2%, 0.5%, 0.9%, 1.2%, 1.4%, 1.8%, 2.3%, 2.6%, and the like, based on the total mass of the ceramic raw material powder.
Overall, the fluorescent ceramic may be fabricated by a powder metallurgy process. For example, in one example, the ceramic raw material powder and the auxiliary agent are sintered by vacuum sintering and annealing, which are sequentially performed, and then cooled in a furnace to obtain a finished product. By means of sintering and other technological operation, the assistant may be eliminated to obtain assistant containing no material.
The vacuum sintering conditions are as follows: the sintering temperature is 1600-1900 deg.C (e.g., 1609 deg.C, 1625 deg.C, 1730 deg.C, 1790 deg.C, 1840 deg.C, 1870 deg.C, etc.), the holding time is 8-40 hours (e.g., 9 hours, 14 hours, 26 hours, 33 hours, 36 hours, 39 hours, etc.), and the vacuum degree is 10-3Pa～10-6Pa (e.g., 10)-5Pa、10-4Pa, etc.). The conditions of annealing are, for example: the incubation is carried out at 1100-1600 deg.C (e.g., 1209 deg.C, 1325 deg.C, 1400 deg.C, 1587 deg.C, 1590 deg.C, etc.) for 5-30 hours (e.g., 6 hours, 10 hours, 11 hours, 17 hours, 20 hours, 28 hours, etc.).
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims (10)

1. A carrier for a light emitting diode, the carrier comprising an integrally formed substrate comprising opposed top and bottom surfaces;
the substrate is provided with a dam protruding from a top surface, the top surface is provided with an inner area and an outer area on two sides of the dam, the inner area is provided with a plurality of convex columns protruding from the top surface, and each convex column is provided with a groove protruding from a bottom surface.
2. The carrier of claim 1 wherein the dam is provided with blind holes from a bottom surface.
3. The carrier according to claim 1 or 2, wherein the dam is provided with a through hole communicating the inner and outer regions.
4. The carrier of claim 1 wherein the top surface is a mirror surface that is reflective.
5. The carrier according to claim 1 or 4, wherein the substrate is made of a heat conducting material.
6. A light-emitting device, comprising:
the vector of any one of claims 1 to 5;
a fluorescent material bonded to the substrate through the dam and covering the inner region;
a light emitting chip disposed in an inner region of a top surface of the substrate;
the conducting wire is used for connecting the light-emitting chip and leading out the electrode;
the insulating layer covers the outer side area of the substrate;
and the circuit layer covers the insulating layer, is provided with a connecting point for an external circuit, and is electrically connected with the electrode.
7. The light-emitting device according to claim 6, wherein the fluorescent material is a fluorescent ceramic material.
8. The light-emitting device according to claim 7, wherein the fluorescent material is a planar plate-like structure.
9. The light-emitting device of claim 7, wherein the fluorescent ceramic material has the formula Y3Al5O12:xCe3+Wherein x is a real number, and x is more than 0 and less than or equal to 0.09.
10. The light-emitting device according to claim 6, wherein the top of all the posts is in contact with the plate-shaped fluorescent material.
CN202010107215.9A 2020-02-21 2020-02-21 Carrier and light emitting device Pending CN111180567A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111720807A (en) * 2020-07-15 2020-09-29 中山市利乐照明有限公司 Industrial and mining lamp and production method thereof

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070145383A1 (en) * 2005-11-10 2007-06-28 Samsung Electronics Co., Ltd. High luminance light emitting diode and liquid crystal display device using the same
CN102751273A (en) * 2012-07-10 2012-10-24 贵州大学 Structure of white LED (Light Emitting Diode) fluorescent lamp and production method of structure
JP2014011448A (en) * 2012-07-02 2014-01-20 Kowadenki Co Ltd Luminaire
CN204088315U (en) * 2014-08-26 2015-01-07 北京大学东莞光电研究院 MCOB LED fluorescent powder separate package structure
US20150021633A1 (en) * 2013-07-17 2015-01-22 Lextar Electronics Corporation Light-emitting diode package and light-emitting device
CN104617205A (en) * 2015-01-23 2015-05-13 厦门多彩光电子科技有限公司 Combined type round high power integration LED (light emitting diode) light source
CN211654852U (en) * 2020-02-21 2020-10-09 松山湖材料实验室 Light emitting device and carrier

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070145383A1 (en) * 2005-11-10 2007-06-28 Samsung Electronics Co., Ltd. High luminance light emitting diode and liquid crystal display device using the same
JP2014011448A (en) * 2012-07-02 2014-01-20 Kowadenki Co Ltd Luminaire
CN102751273A (en) * 2012-07-10 2012-10-24 贵州大学 Structure of white LED (Light Emitting Diode) fluorescent lamp and production method of structure
US20150021633A1 (en) * 2013-07-17 2015-01-22 Lextar Electronics Corporation Light-emitting diode package and light-emitting device
CN204088315U (en) * 2014-08-26 2015-01-07 北京大学东莞光电研究院 MCOB LED fluorescent powder separate package structure
CN104617205A (en) * 2015-01-23 2015-05-13 厦门多彩光电子科技有限公司 Combined type round high power integration LED (light emitting diode) light source
CN211654852U (en) * 2020-02-21 2020-10-09 松山湖材料实验室 Light emitting device and carrier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111720807A (en) * 2020-07-15 2020-09-29 中山市利乐照明有限公司 Industrial and mining lamp and production method thereof

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