CN111172595A - Air inlet and exhaust device for pipe - Google Patents
Air inlet and exhaust device for pipe Download PDFInfo
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- CN111172595A CN111172595A CN202010152888.6A CN202010152888A CN111172595A CN 111172595 A CN111172595 A CN 111172595A CN 202010152888 A CN202010152888 A CN 202010152888A CN 111172595 A CN111172595 A CN 111172595A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 239000011148 porous material Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 40
- 238000009792 diffusion process Methods 0.000 abstract description 25
- 239000002912 waste gas Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 41
- 235000012431 wafers Nutrition 0.000 description 14
- 238000009826 distribution Methods 0.000 description 6
- 239000005388 borosilicate glass Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 210000003437 trachea Anatomy 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a gas inlet and exhaust device for a pipe, which comprises a gas inlet pipe and an exhaust pipe, wherein the gas inlet pipe and the exhaust pipe are distributed in a furnace pipe and are close to the inner wall of the furnace; the air inlet pipe and the air outlet pipe are of a multi-layer sleeve structure with the same structure, and the multi-layer sleeve structure is formed by sleeving at least two air pipes from inside to outside with the same axis; each layer of air pipe is provided with a plurality of air holes. The gas inlet pipe and the gas outlet pipe adopt a multilayer sleeve structure, and the internal space of the multilayer sleeve structure enables diffusion source gas and reaction residual waste gas to be fully and uniformly mixed in the multilayer sleeve structure and then enter or be discharged out of the furnace pipe. On the other hand, the position, the angle, the aperture, the pitch and the hole direction of the air holes in each layer of air pipes are all adjusted, so that the stability and the uniformity of the air flow direction entering the furnace pipe are realized.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a pipe air inlet and exhaust device suitable for a high-temperature diffusion pipe.
Background
At present, PERC + SE technology is one of the most mature and efficient cell technology routes, and mass production has been achieved, in which diffusion is one of the core processes of laser selective emitter (selective SE) technology. The laser SE technology is characterized in that a doping source in phosphorosilicate glass or borosilicate glass is deposited on the surface of a silicon wafer, and the redistribution of the doping source is realized under the action of the laser thermal effect. At present, the crystalline silicon battery diffusion adopts a tubular diffusion mode, the diffusion uniformity of the crystalline silicon battery is adjusted by adjusting three factors of process time, gas flow and temperature, and meanwhile, the crystalline silicon battery diffusion has great relation with the gas inlet and exhaust modes and positions of a furnace tube.
The traditional high-temperature diffusion tube adopts the modes of furnace mouth gas inlet furnace tail gas extraction, furnace tail gas inlet furnace mouth gas extraction or spraying gas inlet furnace gas extraction and the like, and the gas inlet and exhaust pipes are single-layer pipes. Under the condition, the reaction distribution of the doping gas on the surface of the silicon wafer is not uniform, the uniformity of the sheet internal and inter-sheet resistance of the whole furnace tube is adversely affected, and the distribution uniformity of the thickness of the phosphorosilicate glass or borosilicate glass on the surface of the silicon wafer and the concentration of the doping source can be affected, so that the laser SE rear sheet resistance in the next step is affected.
In addition, the traditional high-temperature diffusion tube has other problems, which are shown in the following steps that (1) only the air inlet tube is focused, and the exhaust tube is still a single-layer tube, but the transverse airflow disturbance can be caused by the mode; (2) the single-layer gas inlet pipe cannot uniformly mix the doping gas, so that the uniform distribution of the diffusion gas is influenced; (3) the irregular holes of the air inlet pipe cause the air inlet pipe and the exhaust pipe not to be universal, and the cost is increased.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention provides a gas inlet and outlet device for a tube, which can ensure the uniform and stable distribution of the diffused gas in the furnace tube.
In order to achieve the purpose, the technical scheme of the invention is as follows:
the gas inlet and exhaust device for the tube comprises a gas inlet tube and an exhaust tube, wherein the gas inlet tube and the exhaust tube are distributed in the furnace tube and are abutted against the inner wall of the furnace; the air inlet pipe and the air outlet pipe are of a multi-layer sleeve structure with the same structure, and the multi-layer sleeve structure is formed by sleeving at least two air pipes from inside to outside with the same axis; each layer of air pipe is provided with a plurality of air holes.
Preferably, the plurality of air holes on each layer of air pipe are arranged side by side in one row or more than one row along the axial direction or the circumferential direction of the air pipe.
Preferably, a plurality of air holes on the air pipes between adjacent layers are arranged in a staggered mode.
Preferably, the pore diameters of the pores of the adjacent trachea gradually decrease from the inner layer to the outer layer in the multi-layer sleeve structure.
Preferably, the hole spacing of each adjacent air hole on each layer of air pipe in the multilayer sleeve pipe structure is gradually decreased from the inner layer to the outer layer.
Preferably, the positions of the openings of the air holes in adjacent air tubes in the multi-layer sleeve structure are opposite to each other.
Preferably, a plurality of air holes in the multilayer sleeve structure on the outermost air pipe are arranged in parallel in the axial direction on the circumferential surface to form 1-3 rows.
Preferably, if the air holes in the outermost air pipe are arranged in 3 rows in parallel along the circumferential direction, an angle α is formed between central intersection lines of two adjacent air holes located on the left and right sides in the two outermost air holes, and the angle α is 50 ° to 100 °.
The invention has the following beneficial effects:
compared with the prior art, the invention redesigns the air inlet pipe and the air outlet pipe, the air inlet pipe and the air outlet pipe adopt a multilayer sleeve structure, and the internal space of the multilayer sleeve structure enables the diffusion source gas and the reaction residual waste gas to be fully and uniformly mixed in the multilayer sleeve structure and then enter or be discharged out of the furnace tube.
On the other hand, the position, the angle, the aperture, the pitch and the hole direction of the air holes in each layer of air pipes are all adjusted, so that the stability and the uniformity of the air flow direction entering the furnace pipe are realized.
The symmetrical design of the air inlet pipe and the air outlet pipe ensures that air flows in a direction perpendicular to the arrangement direction of the silicon wafers, and prevents the transverse air flow from influencing the thickness uniformity and concentration distribution of phosphorosilicate glass or borosilicate glass on the surfaces of the silicon wafers in the whole furnace tube space. Ensures that the deposition reaction of the process gas (phosphorus source or boron source) on the surface of the silicon wafer is more uniform, and is beneficial to the stability of the subsequent SE laser process
Drawings
Fig. 1 is a diagram showing an application of a pipe intake and exhaust device according to an embodiment of the invention.
Fig. 2 shows a schematic cross-sectional view of fig. 1.
Fig. 3 shows a schematic diagram of an intake pipe or an exhaust pipe in a pipe intake and exhaust device according to an embodiment of the present invention.
Fig. 4 shows a schematic cross-sectional view of fig. 3.
Fig. 5 shows a distribution diagram of outermost air holes of an inlet pipe or an exhaust pipe in an inlet and exhaust device for a pipe according to an embodiment of the invention.
Wherein: 101. a furnace tube; 102. an air inlet pipe; 103. an exhaust pipe; 104. a silicon wafer; 201. a first air hole; 202. a second air hole; 203. a third air hole; 204. a first hole pitch; 205. a second hole pitch; 206. a third hole pitch; 208. an included angle; 208. an outer tube; 209. a middle-layer pipe; 2010. an inner tube.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The present invention will be described in detail below with reference to the accompanying drawings, which are used for illustration purposes.
As shown in fig. 1 and 2, the gas inlet and outlet device for a tube includes a gas inlet tube 102 and a gas outlet tube 103, wherein the gas inlet tube 102 and the gas outlet tube 103 are distributed in a furnace tube 101 and abut against the inner wall of the furnace, and the gas inlet tube 102 and the gas outlet tube 103 are symmetrically distributed around a silicon wafer 104 arranged in the furnace tube 101. As shown in FIG. 1, the symmetrical design of the gas inlet pipe 102 and the gas outlet pipe 103 ensures that the gas flows in a direction perpendicular to the arrangement direction of the silicon wafers 104 as shown by the arrow in FIG. 1, and prevents the transverse gas flow from influencing the thickness uniformity and concentration distribution of the phosphorosilicate glass or borosilicate glass on the surfaces of the silicon wafers in the whole furnace tube space.
The air inlet pipe 102 and the air outlet pipe 103 are both of a multilayer sleeve structure with the same structure, and the multilayer sleeve structure is formed by sleeving at least more than two air pipes from inside to outside coaxially; preferably, as shown in fig. 3 and 4, in this embodiment, the air inlet pipe 102 or the air outlet pipe 103 both adopt a three-layer sleeve manner, each layer of air pipe is provided with a plurality of air holes, the plurality of air holes on each layer of air pipe are arranged side by side in a row or more than one row along the axial direction or the circumferential direction of the air pipe, as shown in fig. 3, the plurality of air holes on the air pipes between adjacent layers are arranged in a staggered manner.
As shown in fig. 3, the pore diameters of the pores of the adjacent trachea gradually decrease from the inner layer to the outer layer in the multi-layer sleeve structure. In the multilayer sleeve structure, the hole distance of each adjacent air hole on each layer of air pipe is gradually decreased from the inner layer to the outer layer.
As shown in fig. 3, in the three-layer sleeve of this embodiment, preferably, the aperture of the first air holes 201 of the inner-layer tube 2010 is 4-5 mm, the first hole pitch 204 between the first air holes 201 in the inner-layer tube 2010 is 40-50 mm, the aperture of the first air holes 201 in the inner-layer tube 2010 is preferably 5mm, and the first hole pitch is preferably 45 mm; the aperture of the second air holes 202 in the middle layer pipe 209 is 2-4 mm, the second hole interval 205 between the second air holes 202 in the middle layer pipe 209 is 30-40 mm, the aperture of the second air holes 202 in the middle layer pipe 209 is preferably 3.5mm, the second hole interval is preferably 35mm, the aperture of the third air holes 203 in the outer layer pipe 208 is 0.5-1 mm, the third hole interval 206 between the third air holes 203 in the outer layer pipe 208 is 10-20 mm, the aperture of the second air holes 203 in the outer layer pipe 208 is preferably 0.8mm, and the third hole interval 206 is preferably 15 mm. (theoretically the inner and middle tubes could be chosen to have the same pore diameter).
As shown in fig. 4, the positions of the openings of the air holes in the adjacent air tubes are opposite to each other in the multi-layered tube structure. Preferably, in the three-layer sleeve structure of the present embodiment, each third air hole 203 on the outer layer tube 208 is located at the lower half portion of the outer layer tube 208; each second air hole 202 on the middle-layer pipe 209 is positioned at the upper half part of the middle-layer pipe 209; the first gas holes 201 in the inner tube 2010 are located in the lower half of the inner tube 2010.
Preferably, in the outer layer tube 208 of the present embodiment, as shown in fig. 4 and 5, the third air holes 203 in the outer layer tube 208 are distributed in three rows in the axial direction on the circumferential surface, and as shown in fig. 4, in the two outermost left and right rows of the third air holes 203, an angle α is formed between central intersection lines of two adjacent left and right third air holes 203, and the angle α is 50 ° to 100 °, and in the present embodiment, a preferable angle is 85 °.
After being cleaned and textured, the monocrystalline silicon wafer enters the furnace tube 101 and is subjected to diffusion process treatment according to a set diffusion process. After the diffusion is finished, taking out the silicon wafers (the furnace opening, the left side in the furnace, the right side in the furnace and the furnace tail) placed at five different positions in the furnace tube to test the diffusion sheet resistance of the silicon wafers, and then carrying out SE laser scanning processing to test the sheet resistance change of the silicon wafers.
Both tables 1 and 2 are the sheet resistance test results after diffusion with the same high temperature diffusion tube and process parameters. The difference lies in table 1 adopts conventional fire door admission furnace tail exhaust diffusion pipe, and table 2 adopts pipe in this embodiment to use exhaust apparatus that admits air, can derive from table 1 and table 2, and the pipe in this embodiment of adoption is with exhaust apparatus that admits air's whole diffusion sheet resistance homogeneity is better, and the sheet resistance difference is more stable before and after the diffusion piece laser processing in different boiler tube positions, has realized the homogeneity of surface phosphosilicate glass or borosilicate glass deposit promptly, is convenient for the stability control of follow-up laser SE sheet resistance.
TABLE 1 diffusion and laser rear resistance change of conventional furnace mouth gas inlet furnace tail gas exhaust diffusion tube
| Furnace tail | Left side of furnace | In furnaces | In the furnace to the right | Furnace mouth | |
| After diffusion | 124.00 | 125.52 | 124.78 | 120.86 | 122.14 |
| After laser | 85.16 | 83.16 | 79.74 | 73.6 | 73.24 |
| Difference value | 38.84 | 42.36 | 45.04 | 47.26 | 48.90 |
TABLE 2 diffusion and laser rear resistance change of the diffuser tube of the air intake and exhaust device designed by the invention
| Furnace tail | Left side of furnace | In furnaces | In the furnace to the right | Furnace mouth | |
| After diffusion | 127.3 | 129.16 | 127.78 | 129.16 | 128.54 |
| After laser | 84.04 | 83.7 | 83.84 | 84.48 | 84.11 |
| Difference value | 43.26 | 45.46 | 43.94 | 44.68 | 44.43 |
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (8)
1. The gas inlet and exhaust device for the pipe comprises a gas inlet pipe (102) and an exhaust pipe (103), wherein the gas inlet pipe (102) and the exhaust pipe (103) are distributed in a furnace pipe (101) and are abutted against the inner wall of the furnace, and the gas inlet pipe (102) and the exhaust pipe (103) are symmetrically distributed by taking a silicon wafer (104) arranged in the furnace pipe (101) as a center; the method is characterized in that: the air inlet pipe (102) and the air outlet pipe (103) are both of a multilayer sleeve structure with the same structure, and the multilayer sleeve structure is formed by sleeving at least two air pipes from inside to outside with the same axis; each layer of air pipe is provided with a plurality of air holes.
2. The air intake and exhaust apparatus for a pipe of claim 1, wherein: the air holes on each layer of air pipe are arranged side by side in a row or more than one row along the axial direction or the circumferential direction of the air pipe.
3. The air intake and exhaust apparatus for a pipe of claim 2, wherein: the air holes on the air pipes between adjacent layers are arranged in a staggered manner.
4. An air intake and exhaust apparatus for a pipe as claimed in any one of claims 1 to 3, wherein: the pore diameters of the pores of the adjacent air pipes in the multi-layer sleeve structure gradually decrease from the inner layer to the outer layer.
5. The air intake and exhaust apparatus for a pipe of claim 4, wherein: in the multilayer sleeve structure, the hole distance of each adjacent air hole on each layer of air pipe is gradually decreased from the inner layer to the outer layer.
6. An air intake and exhaust apparatus for a pipe as set forth in claim 5, wherein: the positions of the openings of the air holes in the adjacent air pipes in the multi-layer sleeve structure are opposite to each other.
7. An air intake and exhaust apparatus for a pipe as claimed in claim 6, wherein: a plurality of air holes in the multilayer sleeve structure on the outermost air pipe are arranged in parallel in the axial direction on the circumferential surface to form 1-3 rows.
8. An air intake and exhaust apparatus for a pipe as claimed in claim 7, wherein: if the air holes on the outermost air pipe are circumferentially arranged in 3 rows side by side, an included angle alpha is formed between central intersection lines of two adjacent air holes located on the left side and the right side in the two outermost air holes, and the included angle alpha is 50-100 degrees.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010152888.6A CN111172595A (en) | 2020-03-06 | 2020-03-06 | Air inlet and exhaust device for pipe |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010152888.6A CN111172595A (en) | 2020-03-06 | 2020-03-06 | Air inlet and exhaust device for pipe |
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| CN111172595A true CN111172595A (en) | 2020-05-19 |
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| CN202010152888.6A Pending CN111172595A (en) | 2020-03-06 | 2020-03-06 | Air inlet and exhaust device for pipe |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100258053A1 (en) * | 2007-12-20 | 2010-10-14 | Chantal Arena | Apparatus for delivering precursor gases to an epitaxial growth substrate |
| CN202167467U (en) * | 2011-08-17 | 2012-03-14 | 百力达太阳能股份有限公司 | Tail air spraying and diffusing apparatus used for solar energy battery |
| CN202275863U (en) * | 2011-10-09 | 2012-06-13 | 宁波升日太阳能电源有限公司 | Quartz furnace tube used for manufacturing PN junction of crystalline silicon solar cell |
| CN103839747A (en) * | 2012-11-27 | 2014-06-04 | 财团法人工业技术研究院 | Plasma device |
| CN211947290U (en) * | 2020-03-06 | 2020-11-17 | 帝尔激光科技(无锡)有限公司 | Air inlet and exhaust device for pipe |
-
2020
- 2020-03-06 CN CN202010152888.6A patent/CN111172595A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100258053A1 (en) * | 2007-12-20 | 2010-10-14 | Chantal Arena | Apparatus for delivering precursor gases to an epitaxial growth substrate |
| CN202167467U (en) * | 2011-08-17 | 2012-03-14 | 百力达太阳能股份有限公司 | Tail air spraying and diffusing apparatus used for solar energy battery |
| CN202275863U (en) * | 2011-10-09 | 2012-06-13 | 宁波升日太阳能电源有限公司 | Quartz furnace tube used for manufacturing PN junction of crystalline silicon solar cell |
| CN103839747A (en) * | 2012-11-27 | 2014-06-04 | 财团法人工业技术研究院 | Plasma device |
| CN211947290U (en) * | 2020-03-06 | 2020-11-17 | 帝尔激光科技(无锡)有限公司 | Air inlet and exhaust device for pipe |
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