CN111162057B - Semiconductor power device and power processing assembly for semiconductor power device - Google Patents
Semiconductor power device and power processing assembly for semiconductor power device Download PDFInfo
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- CN111162057B CN111162057B CN202010008279.3A CN202010008279A CN111162057B CN 111162057 B CN111162057 B CN 111162057B CN 202010008279 A CN202010008279 A CN 202010008279A CN 111162057 B CN111162057 B CN 111162057B
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- insulating substrate
- chip
- processing assembly
- temperature sensor
- power processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The invention relates to a semiconductor power device and a power processing assembly for the same, wherein the power processing assembly comprises an insulating substrate; a plurality of chips disposed on an insulating substrate; and the temperature sensor comprises a sensor body which is arranged in the insulating substrate completely and positioned below the selected chip, and an electric connecting piece which is connected with the sensor body and penetrates out of the insulating substrate. The power processing assembly can reduce the risk that the short circuit arc breakdown damages the temperature sensor, solve the problem that the error between the temperature detection result of the temperature sensor and the actual working temperature of the selected chip is large, and is favorable for accurately controlling the working temperature of the chip.
Description
Technical Field
The present invention relates to a semiconductor electronic device, and more particularly, to a power processing assembly for a semiconductor power device and a semiconductor power device including the same.
Background
With the continuous development and progress of science and technology, semiconductor power devices are widely applied to the fields of rail transit, smart grids, aerospace, electric vehicles, new energy equipment and the like. As shown in fig. 1, the power processing component is similar to the circuit board structure with components, and is a core unit for implementing the basic functions of the semiconductor power device 100 ', the performance of the power processing component is closely related to the operating temperature of the chip 22 ', and a slight variation in the operating temperature may cause a sudden drop in the performance of the power processing component, so that it is particularly important to precisely control the operating temperature of the chip 22 '. The existing power processing component mainly detects the temperature of a selected chip 22 ' (representative of all chips) through a temperature sensor 23 ' carried by the existing power processing component, and controls a heat radiator to carry out heat radiation on the power processing component to different degrees based on the detection result of the temperature sensor 23 ' so as to maintain continuous and efficient operation of each chip in a desired temperature range.
The chips 22 ' and the temperature sensors 23 ' shown in fig. 1, which are closest to the prior art power processing assembly, are all provided on the insulating substrate 21 ', but in order to reduce the risk of arc breakdown of the chips 22 ' and damage to the temperature sensors 23 ' upon short-circuiting, the temperature sensors 23 ' are not provided in contact with selected chips 22 ', but the temperature sensors 23 ' and the chips 22 ' are insulated from each other by a potting adhesive (not shown). Although the potting adhesive can reduce the risk of short-circuit arc breakdown of the chip 22 ' and damage to the temperature sensor 23 ', the error between the temperature detection result of the temperature sensor 23 ' and the actual operating temperature of the selected chip 22 ' can be increased, which is not favorable for accurately controlling the operating temperature of the chip 22 '.
Disclosure of Invention
In order to solve all or part of the problems, the invention aims to provide a power processing assembly for a semiconductor power device and the semiconductor power device comprising the power processing assembly, wherein the power processing assembly can reduce the risk of damaging a temperature sensor by short-circuit arc breakdown, solve the problem of large error between the temperature detection result of the temperature sensor and the actual working temperature of a selected chip, and is beneficial to accurately controlling the working temperature of the chip.
According to a first aspect of the present invention, there is provided a power handling assembly for a semiconductor power device, comprising an insulating substrate; a plurality of chips disposed on the insulating substrate; and the temperature sensor comprises a sensor body which is integrally arranged in the insulating substrate and positioned below the selected chip, and an electric connecting piece which is connected with the sensor body and penetrates out of the insulating substrate.
According to the power processing assembly for the semiconductor power device related to the first aspect of the invention, the sensor body of the temperature sensor is completely arranged in the insulating substrate, so that the sensor body can be insulated and isolated from the chip by the insulating substrate, and the risk of short-circuit arc breakdown of the chip and damage to the temperature sensor is reduced. The sensor body of the temperature sensor in the invention is arranged below the selected chip besides the insulating substrate, but the sensor of the temperature sensor in the prior art is arranged on one side of the chip, and the inventor of the invention finds out that the heat quantity of the lower area of the selected chip (especially the inner part of the insulating substrate) is closer to the actual working temperature of the chip than the heat quantity of the side area of the selected chip after great efforts, so compared with the prior art, the error between the temperature detection result of the temperature sensor in the invention and the actual working temperature of the selected chip is smaller, and the invention is beneficial to accurately controlling the working temperature of the chip.
According to a second aspect of the present invention, there is provided a semiconductor power device, which includes the power processing assembly for the semiconductor power device according to the first aspect of the present invention, a heat conducting base plate for assembling the power processing assembly, a housing fastened on the heat conducting base plate and accommodating the power processing assembly together with the heat conducting base plate, and a potting adhesive disposed between the housing and the heat conducting base plate and capable of burying the power processing assembly.
According to the semiconductor power device provided by the second aspect of the invention, the risk of damaging the temperature sensor by short-circuit arc breakdown is reduced, and meanwhile, the error between the temperature detection result of the temperature sensor and the actual working temperature of the selected chip is ensured to be smaller, so that the accurate control of the working temperature of the chip is facilitated.
Drawings
Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. In the figure:
fig. 1 is a schematic structural diagram of a semiconductor power device in the prior art;
FIG. 2 schematically illustrates a semiconductor power device not incorporating a temperature sensor in accordance with an embodiment of the present invention;
fig. 3 schematically shows a semiconductor power device having a temperature sensor incorporated therein according to an embodiment of the present invention.
In the drawings, like parts are provided with like reference numerals. The figures are not drawn to scale.
Detailed Description
The invention will be further explained with reference to the drawings.
Fig. 2 and 3 show the structure of a semiconductor power device of an embodiment of the present invention. As shown in fig. 2 and 3, the semiconductor power device 100 may be an IGCT device (Integrated Gate-commutilated Thyristor in chinese), an IGBT device (Insulated Gate Bipolar Transistor in chinese) or the like. The semiconductor power device 100 includes a power processing assembly, a heat conducting base plate 30 for carrying the power processing assembly, a housing 40 fastened to the heat conducting base plate 30 and accommodating the power processing assembly together therewith, and a potting adhesive (not shown) disposed between the housing 40 and the heat conducting base plate 30 and capable of burying the power processing assembly.
The power processing module includes an insulating substrate 21 and a plurality of chips 22 disposed on the insulating substrate 21. The insulating substrate 21 may be selected from a glass substrate with a wiring layer (e.g., copper foil), a quartz substrate, a sapphire substrate, or a ceramic substrate. The plurality of chips 22 are electrically connected through the wiring layer of the insulating substrate 21. The particular choice of chip 22 is related to the particular choice of semiconductor power device 100, such as when semiconductor power device 100 is selected as an IGCT device, chip 22 may be selected as a GTO chip 22; for another example, when semiconductor power device 100 is selected as an IGBT device, chip 22 may be selected as IGBT chip 22. It should be noted that when the chip 22 is selected as the IGBT chip 22 of the IGBT device, it is difficult to connect the chips 22 by only the line layer of the insulating substrate 21 to meet the requirement of the IGBT device, so the power processing assembly may further include a bonding wire 24 for electrically connecting the top electrode of the chip 22 with the insulating substrate 21.
The power processing assembly also includes a temperature sensor. The temperature sensor includes a sensor body 231 disposed within the insulating substrate 21 and below a selected chip 22, and an electrical connection 232 connected to the sensor body 231 and extending out of the insulating substrate 21. The sensor body 231 is used for detecting the working temperature of the chip 22, and the electric connection member 232 can transmit the detection signal of the sensor body 231 to the outside of the insulating substrate 21. The temperature sensor is typically selected to be a thermistor or thermocouple with a pin that is an integral or partial structure of electrical connection 232. Electrical connector 232 is preferably L-shaped so that a first end thereof can enter dielectric substrate 21 and be connected to sensor body 231, while an opposite second end can exit the top of housing 40 and facilitate a person making an electrical connection therewith. To improve the stability of the L-shaped electrical connector 232, the second end of the L-shaped electrical connector may first penetrate the sidewall of the housing and then exit the top of the housing 40.
In the present embodiment, the sensor body 231 of the temperature sensor of the power processing assembly is completely disposed in the insulating substrate 21, so that it can be insulated from the chip 22 by the insulating substrate 21, and the risk of short-circuit arc breakdown of the chip 22 and damage to the temperature sensor is reduced. Meanwhile, the sensor body 231 of the temperature sensor in the present embodiment is located below the selected chip 22 in addition to the insulating substrate 21, but the sensor of the temperature sensor in the prior art is originally located at one side of the chip 22, and since the inventor of the present invention finds that the heat quantity of the lower region of the selected chip 22 (especially, the inside of the insulating substrate 21) is closer to the actual operating temperature of the chip 22 than the heat quantity of the side region thereof after the inventor of the present invention has paid attention to, compared with the prior art, the error between the temperature detection result of the temperature sensor in the present embodiment and the actual operating temperature of the selected chip 22 is smaller, which is beneficial to accurately controlling the operating temperature of the chip 22. In a preferred embodiment, the insulating substrate 21 is selected as a ceramic substrate with a circuit layer, which not only can further reduce the risk of short-circuit arc breakdown of the chip 22 and damage to the temperature sensor, but also can further reduce the error between the temperature detection result of the temperature sensor and the actual operating temperature of the selected chip 22, because the ceramic substrate has the advantages of low cost, good insulation and high heat transfer efficiency.
In the present embodiment, the insulating substrate 21 includes a substrate body 211 and a receiving groove 212 formed on the substrate body 211, wherein the receiving groove 212 is for receiving a sensor body 231 of the temperature sensor and an electrical connector 232. By accommodating the temperature sensor in the accommodation groove 212 provided in the substrate body 211, the temperature sensor can be incorporated into the insulating substrate 21 at low cost, and the insulating substrate 21 can ensure good insulation between the sensor body 231 of the temperature sensor and the chip 22. In addition to the way of accommodating the temperature sensor by the accommodation groove 212 provided in the substrate body 211, the temperature sensor may be installed in the insulating substrate 21 by another way (for example, a pre-embedded way), and the insulating substrate 21 can ensure that the sensor body 231 of the temperature sensor and the chip 22 are insulated and isolated.
In this embodiment, the substrate body 211 includes a first edge and a second edge opposite to each other, and the receiving groove 212 vertically extends from the first edge of the substrate body 211 toward the second edge thereof, so that the manufacturing difficulty and the manufacturing cost of the receiving groove 212 can be effectively reduced. In order to determine the length of the accommodating groove 212 and further reduce the manufacturing difficulty and the manufacturing cost of the accommodating groove 212, the distance from the selected chip 22 to the first edge of the insulating substrate 21 is less than or equal to the distance from the other chips 22 to the first edge of the insulating substrate 21. The cross section of the receiving groove 212 may be selected to be circular, polygonal or other shapes, but it is recommended to select the shape to match the cross section of the sensor body 231, so as to ensure a larger contact area between the two, and further reduce the error between the temperature detection result of the temperature sensor and the actual operating temperature of the selected chip 22.
In this embodiment, the power processing assembly further includes a thermal conductive adhesive (not shown) filled in the receiving groove 212 and capable of fixing the temperature sensor in the receiving groove 212. The thermal conductive adhesive not only can fix the temperature sensor in the accommodating groove 212, but also can further reduce the error between the temperature detection result of the temperature sensor and the actual working temperature of the selected chip 22. The heat-conducting glue belongs to the conventional products in the field and is not described in detail herein.
Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
The above description is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily make changes or variations within the technical scope of the present invention disclosed, and such changes or variations should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims. The technical features mentioned in the embodiments can be combined in any way as long as there is no structural conflict. It is intended that the invention not be limited to the particular embodiments disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.
Claims (7)
1. A power handling assembly for a semiconductor power device, comprising:
an insulating substrate;
a plurality of chips disposed on the insulating substrate;
the temperature sensor comprises a sensor body which is completely arranged in the insulating substrate and positioned below the selected chip, so that the temperature sensor is insulated and isolated from the chip by the insulating substrate;
the electric connecting piece is connected with the sensor body and penetrates out of the insulating substrate;
the insulating substrate comprises a substrate body and a containing groove which is formed on the substrate body and used for containing the sensor body of the temperature sensor and the electric connecting piece, wherein the containing groove vertically extends from a first edge of the substrate body to a second edge of the substrate body, the first edge and the second edge are opposite sides, and the distance from the selected chip to the first edge of the insulating substrate is smaller than or equal to the distance from other chips to the first edge of the insulating substrate.
2. The power processing assembly of claim 1, further comprising a thermally conductive adhesive filled in the receiving groove and capable of fixing the temperature sensor in the receiving groove.
3. The power processing assembly of claim 1, wherein the temperature sensor comprises a thermistor or thermocouple with a pin that is a unitary or partial structure of the electrical connection.
4. The power processing assembly of claim 1, further comprising a bond wire electrically connecting a top electrode of the chip with the insulating substrate, wherein the chip is an IGBT chip.
5. The power processing assembly of claim 1, wherein the insulating substrate is a ceramic substrate capable of electrically connecting the plurality of chips.
6. A semiconductor power device characterized in that it comprises a power handling component according to any of claims 1 to 5.
7. The semiconductor power device according to claim 6, comprising a heat conducting base plate for carrying the power processing assembly, a housing fastened to the heat conducting base plate and accommodating the power processing assembly together with the heat conducting base plate, and a potting adhesive disposed between the housing and the heat conducting base plate and filling the power processing assembly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010008279.3A CN111162057B (en) | 2020-01-06 | 2020-01-06 | Semiconductor power device and power processing assembly for semiconductor power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202010008279.3A CN111162057B (en) | 2020-01-06 | 2020-01-06 | Semiconductor power device and power processing assembly for semiconductor power device |
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| Publication Number | Publication Date |
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| CN111162057A CN111162057A (en) | 2020-05-15 |
| CN111162057B true CN111162057B (en) | 2022-01-21 |
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| CN202010008279.3A Active CN111162057B (en) | 2020-01-06 | 2020-01-06 | Semiconductor power device and power processing assembly for semiconductor power device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112393818B (en) * | 2020-11-13 | 2021-10-15 | 湖南大学 | Temperature measurement system and temperature measurement method of power module |
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| CN102541120A (en) * | 2010-11-26 | 2012-07-04 | 三星电子株式会社 | Semiconductor devices and methods of controlling temperature thereof |
| CN108323211A (en) * | 2018-01-26 | 2018-07-24 | 香港应用科技研究院有限公司 | Power device package |
| CN108807314A (en) * | 2018-07-30 | 2018-11-13 | 紫光股份有限公司 | A kind of semiconductor refrigeration radiating device for central processing unit (CPU) chip |
| CN109599372A (en) * | 2017-10-03 | 2019-04-09 | 三菱电机株式会社 | Semiconductor device |
| CN208923554U (en) * | 2018-11-13 | 2019-05-31 | 重庆川仪分析仪器有限公司 | Semiconductor laser with thermostat |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0945752A (en) * | 1995-07-27 | 1997-02-14 | Dainippon Screen Mfg Co Ltd | Substrate treatment device |
| JP2003347507A (en) * | 2002-05-27 | 2003-12-05 | Fuji Electric Co Ltd | Semiconductor power device |
| US7741834B2 (en) * | 2007-08-07 | 2010-06-22 | International Business Machines Corporation | Method to monitor substrate viability by a sensor mounted to a substrate |
| JP5987297B2 (en) * | 2011-11-10 | 2016-09-07 | 富士電機株式会社 | Method for manufacturing power semiconductor device |
| JP2015046496A (en) * | 2013-08-28 | 2015-03-12 | シャープ株式会社 | Printed circuit board |
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2020
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1855361A (en) * | 2005-04-28 | 2006-11-01 | 富士通株式会社 | Method for controlling temperature and device |
| CN102541120A (en) * | 2010-11-26 | 2012-07-04 | 三星电子株式会社 | Semiconductor devices and methods of controlling temperature thereof |
| CN109599372A (en) * | 2017-10-03 | 2019-04-09 | 三菱电机株式会社 | Semiconductor device |
| CN108323211A (en) * | 2018-01-26 | 2018-07-24 | 香港应用科技研究院有限公司 | Power device package |
| CN108807314A (en) * | 2018-07-30 | 2018-11-13 | 紫光股份有限公司 | A kind of semiconductor refrigeration radiating device for central processing unit (CPU) chip |
| CN208923554U (en) * | 2018-11-13 | 2019-05-31 | 重庆川仪分析仪器有限公司 | Semiconductor laser with thermostat |
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