CN111161992B - Reaction chamber cooling device of semiconductor equipment - Google Patents
Reaction chamber cooling device of semiconductor equipment Download PDFInfo
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- CN111161992B CN111161992B CN201911381868.XA CN201911381868A CN111161992B CN 111161992 B CN111161992 B CN 111161992B CN 201911381868 A CN201911381868 A CN 201911381868A CN 111161992 B CN111161992 B CN 111161992B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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Abstract
The present application relates to a reaction chamber cooling apparatus of a semiconductor device. The device includes: reaction chamber cooling device includes cistern, liquid way baffle and fender liquid strip: the liquid tank comprises a liquid tank bottom plate and a liquid tank side plate; the reaction cavity is arranged in the liquid tank, and the liquid tank is used for containing cooling liquid; the liquid tank side plates are respectively arranged on the left side and the right side of the liquid tank bottom plate; the liquid blocking strips are respectively arranged on the front side and the rear side of the liquid tank bottom plate and positioned on the inner side of the liquid tank side plate; the height of the liquid blocking strip is smaller than that of the liquid tank side plate; the liquid channel partition plates are arranged on the bottom plate of the liquid tank, and a plurality of liquid channels are isolated in the liquid tank. By adopting the scheme disclosed by the application, the heat dissipation efficiency can be improved, and the problem of local overheating of the lower surface of the epitaxial reaction cavity is avoided.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a reaction cavity cooling device of semiconductor equipment.
Background
The general structure of the APCVD apparatus is shown in fig. 1 (a) and 1 (b), wherein fig. 1 (a) is a side view of the APCVD apparatus, and fig. 1 (b) is a top view of the APCVD apparatus. The APCVD apparatus grows a silicon epitaxial layer on a surface of a substrate such as a silicon substrate using a CVD (Chemical Vapor Deposition) technique. The substrate is placed in the wafer groove C1-5 of the circular base C1-1 before epitaxy, and reactants flowing through the surface of the silicon wafer generate an epitaxial film on the surface of the substrate due to chemical reaction at a controlled temperature. Generally, in order to obtain a good thickness uniformity of the epitaxial layer, the susceptor is rotated around the support shaft at a certain speed during the epitaxial process. The graphite susceptor is placed in a closed chamber C1-2 made of quartz. The reaction gas is introduced from one side, flows through the surface of the susceptor and then flows out from the opposite side. Various byproducts are also commonly produced concomitantly in the reaction process, but most are carried along with the gas flow and are not left in the reaction chamber. The APCVD equipment also comprises a gas transmission pipeline C1-3, a tail gas treatment pipeline C1-4 and the like.
The surface of the epitaxial reaction cavity is coated with a reflecting layer (a representative reflecting layer is a gold-plated layer) capable of reflecting infrared radiation back, so that the infrared radiation emitted by the base at high temperature can be reflected into the cavity, and the utilization rate of heat is improved. The CVD reaction temperature can be up to 1050 deg.C or above, and the temperature of the reaction cavity surface can be up to about 200 deg.C. The gold plating layer on the surface of the reaction chamber is easy to peel off and fall off at such high temperature, thereby affecting the service performance of the reaction chamber. Particularly, the epitaxial reaction chamber is a core component of the APCVD equipment, the cost is high, and the service life of the epitaxial reaction chamber can be prolonged, so that the use cost and the maintenance cost can be reduced. Therefore, temperature control of the reaction chamber surfaces is very important.
The lower surface of the epitaxial reactor is usually water-cooled to control the temperature. Figure 2 shows a top view of a prior art cooling apparatus with an epitaxial reactor chamber disposed thereon. Fig. 3 shows a partial oblique view of the cooling device. FIG. 4 shows a top view of the cooling apparatus without the epitaxial reactor chamber.
As shown in fig. 2, 3 and 4, the cooling liquid flows in through a water inlet C2-7, the cooling liquid is provided through a transverse water inlet pipe C2-1 at two sides of the reaction chamber, a water outlet hole C2-3 is formed in the water inlet pipe C2-1 opposite to the side of the reaction chamber C2-2, the cooling liquid enters the area X1 through the water outlet hole C2-3 until the area X1 is filled, then flows back to a liquid blocking strip C2-5 through a gap in the middle of a water blocking plate C2-4, and is poured to the area X2 after passing through the liquid blocking strip C2-5, and then the cooling water flows out through a water outlet hole C2-6. In the whole machine operation process, the bottom of the reaction cavity C2-2 is always soaked in the cooling liquid.
The cooling device has the following defects:
(1) The nozzle is located cistern border position, and the cooling water that the nozzle launches slows down because of the resistance in the flow process, and the velocity of flow reduces obviously when reacing cooling cistern central zone, leads to heat exchange capacity also lower, and according to actual conditions, because central zone is in graphite base projection area just, the temperature is the highest, needs stronger cooling capacity.
(2) The surface temperature of the reaction chamber C2-2 can reach 150-200 ℃, and due to the existence of the water-stop sheet C2-4, the thickness of a cooling water layer between the reaction chamber C2-2 and the water-stop sheet C2-4 is thin, and the cooling water layer can not be supplemented in time after high-temperature evaporation, so that the bottom of the reaction chamber C2-2 is locally overheated, and the situations of discoloration and peeling of a gold-plated layer can also occur.
FIG. 5 is a top view and FIG. 6 is a side view of another epitaxial reactor lower surface cooling apparatus of the prior art. As shown in the figure, cooling water is distributed into 2 longitudinal side pipes P1 and P2 through a cooling water distribution system, two groups of bent radial pipes P3 and P4 are respectively connected with the pipes P1 and P2, and then the cooling water is sprayed out from spray holes on the pipes P3 and P4 to form a vortex state in a liquid tank for cooling the bottom of the reaction chamber. The cooling water flows to the water drainage part P6 through the liquid blocking strip P5 after passing through the bottom surface of the reaction chamber and the water stop plate.
The cooling devices of fig. 5 and 6 have the following disadvantages:
(1) The bent water outlet pipes P3 and P4 can attenuate the water flow rate to a certain extent, which is not beneficial to cooling.
(2) The flow of a single jet pipeline cannot be read, cannot be adjusted and controlled, cannot ensure the uniform water flow, and cannot effectively form a vortex.
(3) Along with the flowing of water to the edge, the water flow speed is attenuated, and bubbles are easy to be detained at the edge of the central circular hole of the water-stop plate, so that the area is insufficiently cooled, the temperature of the gold-plated layer is higher, and the gold layer is easy to peel off.
Other cooling devices have been proposed in the prior art, which form a vortex by means of a plurality of nozzles distributed in the center of the bottom of the tank, significantly increasing the flow rate and heat exchange capacity, and also improving the problem of local overheating in the central area. However, as the water flows to the edge, the water flow speed is attenuated, so that bubble retention is easy to occur between the water-stop plate and the lower surface of the reaction cavity, the edge area is not cooled sufficiently, the temperature of the gold-plated layer is high, and the gold layer at the edge is easy to peel off. In addition, the water flow emitted by the nozzle is affected by adjacent water flows in different degrees, so that the uniformity of the water flow cannot be ensured, turbulence is often formed, and vortex is difficult to form effectively.
Disclosure of Invention
The application aims at providing a cooling device with a better cooling effect to avoid the phenomenon that the gold-plated layer is discolored or falls off due to local overheating of the lower surface of an epitaxial reaction cavity.
The application provides a reaction cavity cooling device of semiconductor equipment on the one hand, the reaction cavity cooling device comprises a liquid tank, a liquid channel partition plate and a liquid blocking strip;
the liquid tank comprises a liquid tank bottom plate and a liquid tank side plate; the reaction cavity is arranged in the liquid tank, and the liquid tank is used for containing cooling liquid;
the liquid tank side plates are respectively arranged on the left side and the right side of the liquid tank bottom plate;
the liquid blocking strips are respectively arranged on the front side and the rear side of the liquid tank bottom plate and positioned on the inner side of the liquid tank side plate;
the height of the liquid blocking strip is smaller than that of the liquid tank side plate;
the liquid channel partition plates are arranged on the liquid tank bottom plate, and a plurality of liquid channels are isolated in the liquid tank.
Optionally, the liquid channel partition plates are arranged according to a pattern of one of the following:
a plurality of concentric circles, a plurality of concentric ellipses, a spiral, a plurality of concentric squares.
Optionally, the reaction chamber cooling device further comprises a plurality of first nozzles and a plurality of liquid outlet pipes;
the liquid outlet pipe penetrates through the liquid tank bottom plate and introduces liquid into the liquid tank;
the first nozzle is arranged in the liquid channel, is connected with the liquid outlet pipe and is used for spraying cooling liquid;
the distance between the first nozzle and the bottom plate of the liquid tank is less than the height of the liquid channel partition plate;
the first nozzles are arranged in one-to-one correspondence with the liquid outlet pipes.
Optionally, the liquid channel partition plate is perpendicular to the liquid tank bottom plate; and a preset height difference is formed between the adjacent liquid channel partition plates.
Optionally, the liquid emitting direction of each first nozzle is parallel to the liquid channel or forms a preset included angle with the liquid channel.
Optionally, the reaction cavity cooling device further comprises a plurality of liquid outlet pipe lead-out grooves arranged on the liquid tank bottom plate; the liquid outlet pipe penetrates through the liquid outlet pipe lead-out groove and leads cooling liquid out to the first nozzle.
Optionally, each water inlet pipe is provided with an independent on-off valve and a flow control valve.
Optionally, the liquid blocking strip is as wide as the liquid tank bottom plate, or is shorter than the liquid tank bottom plate so as to leave a gap on one side.
Optionally, the reaction chamber cooling device further includes a second nozzle and a second nozzle drain pipe connected to the second nozzle, the second nozzle is disposed at the inner side of the liquid blocking strip and close to the liquid blocking strip, and is used for increasing the flow rate of the cooling liquid at the edge region of the liquid tank.
The beneficial effect of this application lies in:
1. the liquid channel structure is arranged on the liquid tank bottom plate, so that the mutual interference of the cooling liquid emitted by the nozzle can be effectively avoided, the cooling liquid is guided to form a vortex without generating turbulence, and the flow speed can be remarkably accelerated to improve the heat dissipation effect;
2. the design of no water-stop sheet is adopted, bubbles and a thin water layer area are not easy to appear, enough liquid flow in a high-temperature area can be ensured, and the condition of local overheating is avoided.
Drawings
The foregoing and other objects, features and advantages of the application will be apparent from the following more particular descriptions of exemplary embodiments of the application, as illustrated in the accompanying drawings wherein like reference numbers generally represent like parts throughout the exemplary embodiments of the application.
Fig. 1 (a) shows a side view of an APVCD device;
FIG. 1 (b) shows a top view of the APVCD device;
FIG. 2 is a top view of a prior art apparatus for cooling the lower surface of an epitaxial reactor chamber;
FIG. 3 shows a partial oblique view of the device of FIG. 2;
FIG. 4 is a plan view of the cooling apparatus described above when the reaction chamber is not placed;
FIG. 5 is a top view of another prior art epitaxial reactor lower surface cooling apparatus;
FIG. 6 shows a side view of the epitaxial reactor chamber of FIG. 5;
FIG. 7 is a top view of a reaction chamber cooling apparatus of a semiconductor device according to one embodiment of the present application;
FIG. 8 is a plan view of a reaction chamber cooling apparatus of a semiconductor device according to another embodiment of the present application.
Description of the reference numerals:
c1-1, a base; c1-2, an epitaxial reaction chamber; c1-3, a gas transmission pipeline; c1-4, a tail gas treatment pipeline, C1-5, a slice groove;
c2-1, a water inlet pipe; c2-2, an epitaxial reaction chamber; c2-3, water outlet holes; c2-4, a water-stop sheet; c2-5, a liquid blocking strip; c2-6, a water outlet; c2-7, a water inlet; c2-8, a reaction chamber guard plate;
p1, longitudinal side pipe; p2, longitudinal side tubes; p3, radial tube; p4, radial tube; p5, a liquid blocking strip; p6, drainage site;
11, a liquid channel clapboard; 12, a liquid channel; 13, a first nozzle; 14, a liquid blocking strip; 15, leading out the liquid outlet pipe from the groove; 16, cooling groove center hole; 17, a second nozzle;
21, a liquid channel clapboard; 22, a liquid channel; 23, a first nozzle; 24, a liquid barrier strip; and 26, cooling the central hole of the groove.
Detailed Description
The present application will be described in more detail below with reference to the accompanying drawings. While the preferred embodiments of the present application have been illustrated in the accompanying drawings, it should be understood that the present application may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
This application provides a reaction chamber cooling device on the one hand, reaction chamber cooling device includes cistern, liquid channel baffle and fender liquid strip:
the liquid tank comprises a liquid tank bottom plate and a liquid tank side plate; the reaction cavity is arranged in the liquid tank, and the liquid tank is used for containing cooling liquid;
the liquid tank side plates are separated from the left side and the right side of the liquid tank bottom plate;
the liquid blocking strips are respectively arranged on the front side and the rear side of the liquid tank bottom plate and positioned on the inner side of the liquid tank side plate;
the height of the liquid blocking strip is smaller than that of the liquid tank side plate;
the liquid channel partition plates are arranged on the liquid tank bottom plate, and a plurality of liquid channels are isolated in the liquid tank.
According to this application, coolant liquid pours into the cistern into constantly, owing to there is the liquid way structure, has effectively avoided the coolant liquid mutual interference of nozzle transmission, and can guide the coolant liquid to form stable even vortex. Under the action of vortex, the liquid in the edge area of the liquid tank can be drained timely, and the liquid in the central area can continuously flow outwards and is mixed with the liquid outside, and finally the liquid is overflowed from the liquid tank and drained. The process can take away a large amount of heat on the lower surface of the reaction cavity, so that the heat exchange device has strong heat exchange capacity. Moreover, the design of the water-stop-free plate is adopted, bubbles and a thin water layer region are not easy to appear, enough liquid flow in a high-temperature region can be guaranteed, and the local overheating condition is avoided.
The liquid channel partition plate can be processed by high-temperature-resistant, corrosion-resistant and good-thermal stability materials and can be fixed on the bottom plate of the liquid tank during installation. The height of the liquid channel partition plate can be set as required. If the top of the liquid channel partition plate is too high, vortex forming can be influenced, cooling liquid is difficult to enter an adjacent outer liquid channel and flow to the edge area, and heat exchange is influenced. In addition, the distance from the bottom of the reaction cavity is too close, and the service life of the liquid tank side plate can be influenced due to too high temperature.
The first nozzle may be circular, elliptical, rectangular, etc. in configuration. Any suitable nozzle configuration may be selected by one skilled in the art.
The liquid blocking strip can be of a solid or hollow structure and can be of a rectangular or semicircular cross-sectional structure. The position and the height of the vortex can be set according to the vortex effect so as to control the height of the liquid level in the liquid tank and the flow and the speed of the liquid discharged from the liquid tank. According to the process requirement, the liquid level height of the cooling liquid in the liquid tank can be adjusted by adjusting the height of the liquid blocking strip, so that the cooling liquid can submerge the preset position at the bottom of the reaction cavity. The liquid level of the coolant is usually set to a certain depth, for example, 1mm to 60mm, over the bottom of the reaction chamber. The liquid blocking strip can be made of corrosion-resistant and high-temperature-resistant materials, and can ensure that the liquid blocking strip has enough stability in cooling liquid at a higher temperature (40-100 ℃).
In one example, the liquid passage partition plates are arranged in a pattern of one of: a plurality of concentric circles, a plurality of concentric ellipses, a spiral, a plurality of concentric squares. The center of the ellipse refers to the intersection of the major and minor axes of the ellipse, where a concentric ellipse refers to a plurality of nested ellipses that are concentric but have different major and minor axes and do not intersect. The spiral shape here may be a circular spiral, or may be a square or other shaped spiral. Thereby better guiding the motion track of the liquid flow emitted by the first nozzle and forming more stable vortex.
In one example, the reaction chamber cooling device further comprises a plurality of first nozzles and a plurality of liquid outlet pipes; the liquid outlet pipe penetrates through the liquid tank bottom plate and introduces liquid into the liquid tank; the first nozzle is arranged in the liquid channel, is connected with the liquid outlet pipe and is used for spraying cooling liquid; the distance between the first nozzle and the bottom plate of the liquid tank is less than the height of the liquid channel partition plate; the first nozzles are arranged in one-to-one correspondence with the liquid outlet pipes. The first nozzle is arranged in the liquid channel, and the distance between the first nozzle and the liquid tank bottom plate is smaller than the height of the liquid channel partition plate, so that liquid flow emitted by the first nozzle is constrained in the liquid channel, and the vortex is more stable and uniform.
In one example, the liquid channel partition is perpendicular to the liquid tank bottom plate; and a preset height difference is formed between the adjacent liquid channel partition plates. This is favorable to further improving rivers heat transfer condition.
In one example, the liquid emission direction of each first nozzle is parallel to the liquid channel or at a predetermined angle (e.g., -60 °). So that the liquid emission direction of each first nozzle is approximately the same as the direction of the liquid flow there, to reduce the resistance of the adjacent emitted liquid flow in the emission direction, contributing to a better swirl.
In one example, the reaction chamber cooling device further comprises a plurality of liquid outlet pipe lead-out grooves arranged on the liquid groove bottom plate; the liquid outlet pipe penetrates through the liquid outlet pipe lead-out groove and leads cooling liquid out to the first nozzle. This helps to reduce the effect of the liquid flow drawing mechanism such as the liquid outlet pipe on the vortex flow, and only the nozzle can be protruded from the upper surface of the liquid tank bottom plate as much as possible.
In one example, separate on-off valves and flow control valves are provided for each outlet conduit to allow independent control of the on-off of each conduit and the flow of coolant. The flow regulating valve can be selected from a readable flow regulating valve.
In one example, the liquid blocking strip is as wide as the bottom plate of the liquid tank, and the cooling liquid is discharged after passing through the liquid blocking strip. In another example, the water retaining sleeve is shorter than the width of the bottom plate of the liquid tank to leave a gap on one side, so that the flow speed at the edge can be increased, and the heat dissipation efficiency of the edge can be further improved.
In one example, the reaction chamber cooling device further includes a second nozzle and a second nozzle liquid outlet pipe connected to the second nozzle, and the second nozzle is disposed inside and near the liquid blocking strip, and is configured to increase a flow rate of the cooling liquid in the edge region of the liquid bath, so as to further improve the edge heat dissipation efficiency.
Examples
FIG. 7 is a top view of a reaction chamber cooling apparatus of a semiconductor device according to one embodiment of the present application. As shown in the figure, the arrangement pattern of the liquid passage partition 11 is a plurality of concentric circles. The liquid channel partition plate 11 is arranged on the whole upper surface of the liquid tank bottom plate. The drain tube leads the coolant out to the first nozzle 13 through a drain lead-out slot 15. The plurality of first nozzles 13 are uniformly distributed throughout the liquid passage 12.
The liquid blocking strip 14 is slightly shorter than the width of the bottom plate of the liquid tank, and the edge is provided with a notch. The inner side of the liquid barrier strip 14 is also provided with a second nozzle 17 to further accelerate the flow velocity of the marginal area.
The rotating structure of the support base extends into the fluid bath through the cooling bath central aperture 16.
FIG. 8 is a plan view of a reaction chamber cooling apparatus of a semiconductor device according to an embodiment of the present application. As shown, the arrangement pattern of the liquid passage partition plates 21 is a circular spiral. The liquid channel partition plate 21 is arranged on the whole upper surface of the bottom plate of the liquid tank. The drain pipe leads the coolant out to the first nozzle 23 through the drain pipe lead-out groove. The plurality of first nozzles 23 are uniformly distributed throughout the liquid passage 22.
The liquid blocking strip 24 is slightly shorter than the width of the bottom plate of the liquid tank, and the edge is provided with a notch. The inner side of the liquid barrier strip 24 is also provided with a second nozzle to further accelerate the flow rate of the marginal area.
The rotating structure of the support base extends into the fluid bath through the cooling bath central aperture 26.
Having described embodiments of the present application, the foregoing description is intended to be exemplary, not exhaustive, and not limited to the disclosed embodiments. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments.
Claims (8)
1. A cooling device for a reaction cavity of semiconductor equipment is characterized by comprising a liquid tank, a liquid channel partition plate, a liquid blocking strip, a plurality of first nozzles and a plurality of liquid outlet pipes;
the liquid tank comprises a liquid tank bottom plate and a liquid tank side plate; the reaction cavity is arranged in the liquid tank, and the liquid tank is used for containing cooling liquid;
the liquid tank side plates are separated from the left side and the right side of the liquid tank bottom plate;
the liquid blocking strips are respectively arranged on the front side and the rear side of the liquid tank bottom plate and positioned on the inner side of the liquid tank side plate;
the height of the liquid blocking strip is smaller than that of the liquid tank side plate;
the liquid channel partition plates are arranged on the liquid tank bottom plate, and a plurality of liquid channels are isolated in the liquid tank;
wherein, the liquid channel clapboard is arranged according to one of the following patterns:
a plurality of concentric circles, a plurality of concentric ellipses, a spiral shape, a plurality of concentric squares;
the liquid outlet pipe penetrates through the liquid tank bottom plate and introduces the cooling liquid into the liquid tank;
the first nozzles are uniformly arranged in the whole liquid channel, are connected with the liquid outlet pipe and are used for spraying the cooling liquid;
the first nozzles are arranged in one-to-one correspondence with the liquid outlet pipes.
2. The reaction chamber cooling apparatus of claim 1, wherein:
the distance between the first nozzle and the bottom plate of the liquid tank is smaller than the height of the liquid channel partition plate.
3. The reaction chamber cooling device according to claim 1, wherein the liquid passage partition is perpendicular to the liquid bath bottom plate; and a preset height difference is formed between the adjacent liquid channel partition plates.
4. The reaction chamber cooling device of claim 1, wherein the liquid emitting direction of each first nozzle is parallel to the liquid channel or forms a preset included angle with the liquid channel.
5. The reaction chamber cooling arrangement of claim 1 further comprising a plurality of effluent pipe exit slots disposed on the fluid slot floor; the liquid outlet pipe penetrates through the liquid outlet pipe lead-out groove and leads cooling liquid out to the first nozzle.
6. The reaction chamber cooling apparatus of claim 1, wherein each of the liquid outlet pipes is provided with an independent on-off valve and a flow control valve.
7. The reaction chamber cooling device according to claim 1, wherein the liquid blocking strip is as wide as the liquid tank bottom plate or shorter than the liquid tank bottom plate to leave a gap on one side.
8. The reaction chamber cooling device of claim 1, further comprising a second nozzle and a second nozzle drain connected to the second nozzle, wherein the second nozzle is disposed inside and near the liquid barrier strip for increasing the flow rate of the cooling liquid in the edge region of the liquid bath.
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| CN201911381868.XA CN111161992B (en) | 2019-12-27 | 2019-12-27 | Reaction chamber cooling device of semiconductor equipment |
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| CN201911381868.XA CN111161992B (en) | 2019-12-27 | 2019-12-27 | Reaction chamber cooling device of semiconductor equipment |
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| CN111161992B true CN111161992B (en) | 2022-11-25 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN206157270U (en) * | 2016-07-19 | 2017-05-10 | Lpe公司 | A reacting chamber and reactor for epitaxial deposition has a liquid distribution ware |
| CN109423624A (en) * | 2017-08-31 | 2019-03-05 | Asm知识产权私人控股有限公司 | Cooling device, gas supply device and substrate-treating apparatus |
| CN208767255U (en) * | 2018-09-11 | 2019-04-19 | 北京北方华创微电子装备有限公司 | Chamber cooling device and semiconductor processing equipment |
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| EP1809789B1 (en) * | 2004-10-01 | 2015-12-09 | Lpe Spa | Epitaxial reactor cooling method and reactor cooled thereby |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN206157270U (en) * | 2016-07-19 | 2017-05-10 | Lpe公司 | A reacting chamber and reactor for epitaxial deposition has a liquid distribution ware |
| CN109423624A (en) * | 2017-08-31 | 2019-03-05 | Asm知识产权私人控股有限公司 | Cooling device, gas supply device and substrate-treating apparatus |
| CN208767255U (en) * | 2018-09-11 | 2019-04-19 | 北京北方华创微电子装备有限公司 | Chamber cooling device and semiconductor processing equipment |
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