CN111146185A - Inductor and manufacturing method thereof - Google Patents
Inductor and manufacturing method thereof Download PDFInfo
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- CN111146185A CN111146185A CN201910463786.3A CN201910463786A CN111146185A CN 111146185 A CN111146185 A CN 111146185A CN 201910463786 A CN201910463786 A CN 201910463786A CN 111146185 A CN111146185 A CN 111146185A
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- inductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
Abstract
The invention discloses an inductor and a manufacturing method thereof, wherein the method comprises the following steps: depositing an inductor first metal layer, wherein the inductor first metal layer comprises a plurality of discrete metal sections; depositing a first nitride layer on the inductor first metal layer; depositing an inductor second metal layer on the first nitride layer, wherein the inductor second metal layer crosses the middle position of the metal section; depositing a second nitride layer on the inductor second metal layer; opening first nitrides at two ends of the metal section; and the opening is used as a pier to manufacture the air bridge, so that different metal sections are connected end to end, and an inductance coil formed by the metal sections and the air bridge is wound on the inductance second metal layer. The technical scheme can manufacture a three-dimensional inductor, has better quality factor under the high-frequency condition and has larger inductance.
Description
Technical Field
The invention relates to the field of manufacturing of inductors on semiconductor devices, in particular to an inductor and a manufacturing method thereof.
Background
In the prior art, most of integrated inductors with a planar structure are adopted, and along with the complication of circuit application, the traditional integrated inductors cannot present better characteristics; the filter circuit integrated with the traditional inductor cannot filter out disturbing electromagnetic fields to generate differential mode current between transmission lines, so that interference is caused on a load. In addition, in the prior art, due to the limitation of the manufacturing process and materials of the integrated circuit, it is difficult to achieve high inductance and high Q factor at the same time. The inductor in the prior art is prepared by the following steps: firstly, evaporating an inductor main body metal (a first metal layer) on a substrate, and leading out two ends of the inductor main body; secondly, covering a protective layer under the condition that the metal evaporation of the inductor main body is finished; thirdly, carrying out a planarization process on the basis of the step two; and fourthly, carrying out a deposition process of a second metal layer, wherein the second metal layer connects the independent first metal layers of each section along the contour path of the material of the planarization layer.
Disclosure of Invention
Therefore, it is desirable to provide an inductor and a method for manufacturing the same, which solve the problem that it is difficult to achieve high inductance and high quality factor simultaneously in the conventional planar inductor.
In order to achieve the above object, the inventor provides an inductor manufacturing method, including the following steps:
depositing an inductor first metal layer, wherein the inductor first metal layer comprises a plurality of discrete metal sections;
depositing a first nitride layer on the inductor first metal layer;
depositing an inductor second metal layer on the first nitride layer, wherein the inductor second metal layer crosses the middle position of the metal section;
depositing a second nitride layer on the inductor second metal layer;
opening first nitrides at two ends of the metal section;
and the opening is used as a pier to manufacture the air bridge, so that different metal sections are connected end to end, and an inductance coil formed by the metal sections and the air bridge is wound on the inductance second metal layer.
Further, when depositing the inductance first metal layer, depositing the gate metal of the transistor at the same time;
depositing a first metal layer of a transistor at the same time when depositing a second metal layer of the inductor;
and simultaneously depositing a second metal layer of the transistor when the air bridge is manufactured.
Further, the gate metal of the deposited transistor is depletion type gate metal of the deposited transistor;
then the method further comprises the following steps before depositing the gate metal:
and depositing an enhancement type grid metal.
Furthermore, the second metal layer is in a closed ring shape, the inductance second metal layer is wound on the inductance coil formed by the metal section and the air bridge in one direction, and the head section and the tail section of the inductance coil formed by the metal section and the air bridge are led out from one side of the inductance second metal layer.
Furthermore, the second metal layer is square, three sides of the second metal layer of the inductor are wound in one direction by the inductor coil formed by the metal sections and the air bridge, and the head and tail sections of the inductor coil formed by the metal sections and the air bridge are led out from the rest side of the second metal layer of the inductor.
The invention provides an inductor, which is manufactured by the method.
The invention provides an inductor, which comprises an inductor first metal layer, an inductor second metal layer, a first nitride layer, a second nitride layer and an air bridge, wherein the inductor first metal layer is arranged on the first nitride layer;
the first metal layer of the inductor comprises a plurality of discrete metal sections, a first nitride layer is deposited on the metal sections of the first metal layer of the inductor, a second metal layer of the inductor is deposited on the first nitride layer, the second metal layer of the inductor crosses the middle position of the metal sections, a second nitride layer is deposited on the second metal layer of the inductor, first nitrides at two ends of the metal sections are provided with openings, the openings are used as piers of air bridges, the air bridges are connected with the heads and the tails of different metal sections, and an inductance coil formed by the metal sections and the air bridges is wound on the second metal layer of the inductor.
Furthermore, the second metal layer is in a closed ring shape, the inductance second metal layer is wound on the inductance coil formed by the metal section and the air bridge in one direction, and the head section and the tail section of the inductance coil formed by the metal section and the air bridge are led out from one side of the inductance second metal layer.
Furthermore, the second metal layer is square, three sides of the second metal layer of the inductor are wound in one direction by the inductor coil formed by the metal sections and the air bridge, and the head and tail sections of the inductor coil formed by the metal sections and the air bridge are led out from the rest side of the second metal layer of the inductor.
Different from the prior art, the technical scheme can manufacture a three-dimensional inductor, has better quality factor under the high-frequency condition and has larger inductance value.
Drawings
Fig. 1 is a schematic structural diagram of a first metal layer of an inductor according to an embodiment of the invention;
FIG. 2 is a schematic diagram illustrating a first nitride layer deposited on a first metal layer of an inductor according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a second metal layer of an inductor according to an embodiment of the invention;
FIG. 4 is a schematic diagram illustrating a second nitride layer deposited on a second metal layer of an inductor according to an embodiment of the present invention;
FIG. 5 is a schematic view of a first nitride layer opening according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of an air bridge according to an embodiment of the present invention after being fabricated; .
Description of reference numerals:
1. a first metal layer of an inductor, a second metal layer,
2. a second metal layer of the inductor,
3. an opening is formed in the bottom of the container,
4. an air bridge.
Detailed Description
To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.
Referring to fig. 1 to 6, the present embodiment provides a method for manufacturing an inductor, which can be generally performed on an epitaxial wafer of a semiconductor device. The method comprises the following steps: an inductor first metal layer 1 is deposited, the inductor first metal layer comprising a plurality of discrete metal segments, the resulting structure being shown in fig. 1. A first nitride layer is then deposited over the inductor first metal layer such that the first nitride covers each metal segment, as shown in fig. 2. The nitride of the present invention functions as an insulator, and may be, for example, silicon nitride. And then depositing an inductor second metal layer 2 on the first nitride layer, wherein the inductor second metal layer crosses the middle position of the metal segment, that is, the inductor second metal layer does not cross the two ends of the metal segment, so that the two ends of the metal segment at the back can be conveniently connected, and the structure is shown in fig. 3. A second nitride layer is deposited on the second metal layer of the inductor, and the structure is as shown in fig. 4, so that the second nitride layer covers the second metal layer of the inductor. The first nitride on the two ends of the metal segment is opened 3, so that the first metal layer of the inductor at the opening is exposed, and the structure is shown in fig. 5. The air bridge 4 is made by taking the opening as a pier, so that different metal sections are connected end to end, and an inductance coil formed by the metal sections and the air bridge is wound on the inductance second metal layer, and the structure is shown in fig. 6. The air bridge is a metal structure, and is used for connecting different metal segments, generally, adjacent metal segments are connected, the air bridge crosses the second metal layer of the inductor, and the spiral advancing direction of the air bridge is along the second metal layer of the inductor, that is, the air bridge is sequentially arranged along the second metal layer of the inductor. Therefore, the air bridge and the metal section can be connected in series to form a spiral inductance coil, and the second metal layer of the inductance can be arranged in the spiral inductance coil due to the fact that the second metal layer of the inductance crosses the middle position of the metal section, the effect similar to an inductance iron core is formed, the inductance value of the inductance can be increased, and the quality factor of the three-dimensional inductance structure under the high-frequency condition is better.
The inductor can be manufactured at the same time of manufacturing the transistor, so that the manufacturing of the inductor can be completed under the condition of not increasing the process steps of the existing transistor. Specifically, when depositing the inductance first metal layer, depositing the gate metal of the transistor at the same time; namely, the inductance first metal layer and the grid metal are respectively deposited in one metal deposition. Depositing a first metal layer of the transistor at the same time when depositing a second metal layer of the inductor; namely, the inductance second metal layer and the transistor first metal layer are respectively deposited in one metal deposition. Depositing a second metal layer of the transistor simultaneously when manufacturing the air bridge; namely, the inductive air bridge and the second metal layer of the transistor are respectively deposited in one metal deposition.
Further, the gate metal of the deposited transistor is depletion type gate metal of the deposited transistor; then the method further comprises the following steps before depositing the gate metal: and depositing an enhancement type grid metal. Thus, the manufacture of a depletion transistor and an enhancement transistor can be realized simultaneously. Then, in order to complete the manufacture of the transistor, when depositing a first layer metal of the transistor and a second layer metal of the transistor, depositing the first layer metal and the second layer metal of the transistor of the depletion type grid metal and the transistor of the enhancement type grid metal respectively.
In one embodiment, one complete process step is as follows: the first step is as follows: and (3) cleaning the surface of the epitaxial wafer, depositing a source electrode/drain electrode metal deposition process of the device, and depositing a source electrode and a drain electrode. The second step is that: in the enhanced gate photoetching process, the position of the photoresist window is the position of the strong gate. The third step: and an enhanced grid metal deposition process, namely manufacturing enhanced grid metal at the position of the enhanced grid. The fourth step: in the depletion type grid electrode photoetching process, the windowing position comprises a depletion type grid electrode and an inductance first metal layer position. The fifth step: and in the depletion type gate metal deposition process, the deposition positions are the depletion type gate position and the inductor first metal layer position, and the depletion type gate metal and the inductor first metal layer can be manufactured by one-time metal deposition. And a sixth step: a first layer of nitride is deposited overlying the depletion mode gate metal and the inductor first metal layer. The seventh step: and a first metal layer photoetching process, wherein photoetching positions are a first metal layer position of the transistor and a second metal layer position of the inductor. Eighth step: and a first metal layer deposition process, wherein the deposition positions are the position of the first metal layer of the transistor and the position of the second metal layer of the inductor, and the first metal layer of the transistor and the second metal layer of the inductor can be manufactured by one-time metal deposition. The ninth step: a second layer of nitride is deposited. The tenth step: the first layer of nitride is etched at locations across the metal segment of the first metal layer of the inductor. The eleventh step: PO (bridge pier) photoresist coating. The twelfth step: and (5) sputtering TiW metal. The thirteenth step: BR (air bridge) photoresist photoetching process. The fourteenth step is that: and a second metal layer deposition process, wherein the deposition positions are the second metal layer position of the transistor and the air bridge position, and the second metal layer of the transistor and the air bridge are manufactured by one-time metal deposition.
The invention can be used for manufacturing a differential mode inductor, the second metal layer is in a closed ring shape, for example, the second metal layer can be in a ring shape, the inductor coil formed by the metal section and the air bridge winds the second metal layer of the inductor in a direction, the direction is clockwise or anticlockwise around the second metal layer, namely, the inductor coil is wound outside the second metal layer in the clockwise or anticlockwise direction, and the head and tail sections of the inductor coil formed by the metal section and the air bridge are led out from one side of the second metal layer of the inductor.
In a preferred embodiment, the second metal layer is square, the inductor coil formed by the metal segments and the air bridges is wound around three sides of the second metal layer of the inductor in one direction, and the head and tail segments of the inductor coil formed by the metal segments and the air bridges are led out from the rest one side of the second metal layer of the inductor.
The invention provides an inductor, which is manufactured by the method. The inductance of the inductor manufactured by the method can be increased, and the quality factor of the three-dimensional inductor structure under the high-frequency condition is better.
The invention provides an inductor which is an inductor with a final structure and can be prepared according to the method, wherein the final structure is shown in fig. 6 and comprises an inductor first metal layer 1, an inductor second metal layer 2, a first nitride layer, a second nitride layer and an air bridge 4; the first metal layer of the inductor comprises a plurality of discrete metal segments, i.e. there are no connections between the metal segments. The first nitride layer is deposited on a metal section of the first metal layer of the inductor, the second metal layer of the inductor is deposited on the first nitride layer, the second metal layer of the inductor crosses the middle position of the metal section, the second nitride layer is deposited on the second metal layer of the inductor, first nitrides at two ends of the metal section are provided with openings 3, the openings are used as piers of an air bridge, the air bridge is connected with the head and the tail of different metal sections, and an inductance coil formed by the metal section and the air bridge is wound on the second metal layer of the inductor.
Furthermore, the second metal layer is in a closed ring shape, the inductance second metal layer is wound on the inductance coil formed by the metal section and the air bridge in one direction, and the head section and the tail section of the inductance coil formed by the metal section and the air bridge are led out from one side of the inductance second metal layer. This can realize a differential mode inductor, reduce eddy current while increasing the inductance by increasing the inductance flux, and improve the quality factor and the performance of the inductor coil. In some embodiments, the second metal layer is square, the inductor coil formed by the metal segments and the air bridges is wound around three sides of the second metal layer of the inductor in one direction, and the head and tail segments of the inductor coil formed by the metal segments and the air bridges are led out from the rest one side of the second metal layer of the inductor.
It should be noted that, although the above embodiments have been described herein, the invention is not limited thereto. Therefore, based on the innovative concepts of the present invention, the technical solutions of the present invention can be directly or indirectly applied to other related technical fields by making changes and modifications to the embodiments described herein, or by using equivalent structures or equivalent processes performed in the content of the present specification and the attached drawings, which are included in the scope of the present invention.
Claims (9)
1. The inductor manufacturing method is characterized by comprising the following steps:
depositing an inductor first metal layer, wherein the inductor first metal layer comprises a plurality of discrete metal sections;
depositing a first nitride layer on the inductor first metal layer;
depositing an inductor second metal layer on the first nitride layer, wherein the inductor second metal layer crosses the middle position of the metal section;
depositing a second nitride layer on the inductor second metal layer;
opening first nitrides at two ends of the metal section;
and the opening is used as a pier to manufacture the air bridge, so that different metal sections are connected end to end, and an inductance coil formed by the metal sections and the air bridge is wound on the inductance second metal layer.
2. The method of claim 1, wherein the step of:
depositing gate metal of the transistor simultaneously when depositing the first metal layer of the inductor;
depositing a first metal layer of a transistor at the same time when depositing a second metal layer of the inductor;
and simultaneously depositing a second metal layer of the transistor when the air bridge is manufactured.
3. The method of claim 2, wherein:
depositing the grid metal of the transistor into depletion type grid metal of the transistor;
then the method further comprises the following steps before depositing the gate metal:
and depositing an enhancement type grid metal.
4. The method of claim 1, wherein the step of: the second metal layer is in a closed ring shape, the inductance second metal layer is wound on the inductance coil formed by the metal section and the air bridge in one direction, and the head section and the tail section of the inductance coil formed by the metal section and the air bridge are led out from one side of the inductance second metal layer.
5. The method of claim 4, wherein: the second metal layer is square, three sides of the second metal layer of the inductor are wound in one direction by the inductor coil formed by the metal sections and the air bridge, and the head and tail sections of the inductor coil formed by the metal sections and the air bridge are led out from the rest side of the second metal layer of the inductor.
6. An inductor, characterized by: the inductor is made by the method of any one of claims 1 to 5.
7. An inductor, characterized by: the inductor comprises an inductor first metal layer, an inductor second metal layer, a first nitride layer, a second nitride layer and an air bridge;
the first metal layer of the inductor comprises a plurality of discrete metal sections, a first nitride layer is deposited on the metal sections of the first metal layer of the inductor, a second metal layer of the inductor is deposited on the first nitride layer, the second metal layer of the inductor crosses the middle position of the metal sections, a second nitride layer is deposited on the second metal layer of the inductor, first nitrides at two ends of the metal sections are provided with openings, the openings are used as piers of air bridges, the air bridges are connected with the heads and the tails of different metal sections, and an inductance coil formed by the metal sections and the air bridges is wound on the second metal layer of the inductor.
8. An inductor according to claim 7, wherein: the second metal layer is in a closed ring shape, the inductance second metal layer is wound on the inductance coil formed by the metal section and the air bridge in one direction, and the head section and the tail section of the inductance coil formed by the metal section and the air bridge are led out from one side of the inductance second metal layer.
9. An inductor according to claim 8, wherein: the second metal layer is square, three sides of the second metal layer of the inductor are wound in one direction by the inductor coil formed by the metal sections and the air bridge, and the head and tail sections of the inductor coil formed by the metal sections and the air bridge are led out from the rest side of the second metal layer of the inductor.
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| CN201910463786.3A CN111146185A (en) | 2019-05-30 | 2019-05-30 | Inductor and manufacturing method thereof |
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| CN201910463786.3A CN111146185A (en) | 2019-05-30 | 2019-05-30 | Inductor and manufacturing method thereof |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030054233A (en) * | 2001-12-24 | 2003-07-02 | 엘지전자 주식회사 | MicroInductor for Wireless Communication Module |
| JP2006108323A (en) * | 2004-10-04 | 2006-04-20 | Matsushita Electric Ind Co Ltd | Inductance element and its manufacturing method |
| CN101625920A (en) * | 2008-07-11 | 2010-01-13 | 株式会社村田制作所 | Inductor and filter |
| CN101740195A (en) * | 2008-11-27 | 2010-06-16 | 上海华虹Nec电子有限公司 | Semiconductor solenoid inductor and manufacture method thereof |
| CN102403097A (en) * | 2010-09-16 | 2012-04-04 | 三星电机株式会社 | Transformer |
| CN102915957A (en) * | 2012-09-17 | 2013-02-06 | 北京大学 | Method for making air bridge and inductance |
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2019
- 2019-05-30 CN CN201910463786.3A patent/CN111146185A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030054233A (en) * | 2001-12-24 | 2003-07-02 | 엘지전자 주식회사 | MicroInductor for Wireless Communication Module |
| JP2006108323A (en) * | 2004-10-04 | 2006-04-20 | Matsushita Electric Ind Co Ltd | Inductance element and its manufacturing method |
| CN101625920A (en) * | 2008-07-11 | 2010-01-13 | 株式会社村田制作所 | Inductor and filter |
| CN101740195A (en) * | 2008-11-27 | 2010-06-16 | 上海华虹Nec电子有限公司 | Semiconductor solenoid inductor and manufacture method thereof |
| CN102403097A (en) * | 2010-09-16 | 2012-04-04 | 三星电机株式会社 | Transformer |
| CN102915957A (en) * | 2012-09-17 | 2013-02-06 | 北京大学 | Method for making air bridge and inductance |
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Application publication date: 20200512 |