CN101740195A - Semiconductor solenoid inductor and manufacture method thereof - Google Patents
Semiconductor solenoid inductor and manufacture method thereof Download PDFInfo
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- CN101740195A CN101740195A CN200810044019A CN200810044019A CN101740195A CN 101740195 A CN101740195 A CN 101740195A CN 200810044019 A CN200810044019 A CN 200810044019A CN 200810044019 A CN200810044019 A CN 200810044019A CN 101740195 A CN101740195 A CN 101740195A
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- magnetic core
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- lower metal
- metal bar
- metal strips
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Abstract
The invention discloses a semiconductor solenoid inductor which comprises a plurality of upper-layer metal strips and a plurality of lower-layer metal strips, wherein a magnetic core is clamped between the upper-layer metal strips and the lower-layer metal strips; the upper-layer metal strips and the lower-layer metal strips are sequentially connected end to end by contact holes to form a solenoid surrounding the magnetic core along the same direction; the periphery of the magnetic core is wrapped by insulating medium. The invention also discloses a manufacture method of the semiconductor solenoid inductor, which comprises the following steps of: photoetching to form the lower-layer metal strips; then manufacturing an insulating layer on the lower-layer metal strips, manufacturing the magnetic core on the insulating layer and manufacturing an insulating layer on the magnetic core again; manufacturing the contact holes and leading the head ends and the tail ends of the lower-layer metal strips out; and finally photoetching on the insulating layer to form the upper-layer metal strips. The invention effectively improves the magnetic induction intensity in a way of the mutual connection and winding of the metal strips among different layers and the magnetic core, reduces the chip area occupied by a semiconductor inductor and improves the integrated level of chips.
Description
Technical field
The present invention relates to a kind of inductance, especially a kind of semiconductor solenoid inductor.The invention still further relates to a kind of manufacture method of semiconductor solenoid inductor.
Background technology
In radio frequency integrated circuit or radio-frequency micro-machinery field, inductance is a kind of device commonly used.Manufacture method commonly used at present is to use helical coil, as shown in Figure 1, owing to there is not magnetic core, this inductance can't produce bigger magnetic flux density, and in order to increase magnetic flux density, need increase the number of turns of coil, but increasing the number of turns makes this inductance take bigger chip area again as far as possible.And now the integrated level of semiconductor device is more and more higher, the needs that existing this semicoductor capacitor more and more can not the adaptive technique development.
Summary of the invention
Technical problem to be solved by this invention provides a kind of semiconductor solenoid inductor, and the manufacture method of this semiconductor solenoid inductor, can effectively improve magnetic flux density, and reduce the shared chip area of semiconductor inductance, improve the integrated level of chip.
For solving the problems of the technologies described above, the technical scheme of semiconductor solenoid inductor of the present invention is, comprise a plurality of upper stratas bonding jumper and a plurality of lower metal bar, a magnetic core is clipped between described upper strata bonding jumper and the described lower metal bar, described upper strata bonding jumper and described lower metal bar are end to end successively by contact hole, form one along the solenoid of same directional ring, be enclosed with dielectric around the described magnetic core around described magnetic core.
The present invention also provides a kind of manufacture method of semiconductor solenoid inductor, and its technical scheme is in turn include the following steps:
(1) chemical wet etching forms the lower metal bar;
(2) on described lower metal bar, make insulating barrier, cover described lower metal bar fully;
(3) on the insulating barrier of step (2) deposit, make magnetic core;
(4) on magnetic core, make insulating barrier again, cover described magnetic core fully;
(5) make contact hole, described contact hole is drawn the two ends of described lower metal bar;
(6) chemical wet etching forms the upper strata bonding jumper on the insulating barrier of step (4) deposit, makes upper strata bonding jumper and described lower metal bar end to end successively by contact hole, forms one along the solenoid of same directional ring around described magnetic core.
Bonding jumper interconnects the mode of twining with magnetic core between different layers by adopting in the present invention, has effectively improved magnetic flux density, and has reduced the shared chip area of semiconductor inductance, has improved the integrated level of chip.
Description of drawings
The present invention is further detailed explanation below in conjunction with drawings and Examples:
Fig. 1 is the structural representation of conventional semiconductor inductance;
Fig. 2 is the generalized section of semiconductor solenoid electric capacity of the present invention;
Fig. 3 and Fig. 4 are the schematic diagram of semiconductor solenoid electric capacity embodiment of the present invention;
Fig. 5～Figure 10 is the schematic diagram of each step of manufacture method of semiconductor solenoid electric capacity of the present invention.
Reference numeral is among the figure, 1. the upper strata bonding jumper; 2. lower metal bar; 3. magnetic core; 4. contact hole; 5. dielectric.
Embodiment
The invention discloses a kind of semiconductor solenoid inductor, as Fig. 2, Fig. 3 and shown in Figure 4, comprise a plurality of upper stratas bonding jumper 1 and a plurality of lower metal bar 2, a magnetic core 3 is clipped between described upper strata bonding jumper 1 and the described lower metal bar 2, described upper strata bonding jumper 1 and described lower metal bar 2 are end to end successively by contact hole 4, form one along the solenoid of same directional ring, be enclosed with dielectric 5 around the described magnetic core 3 around described magnetic core 3.
As shown in Figure 3, described magnetic core is a strip.
As shown in Figure 4, described magnetic core is a ring-type.
The invention also discloses a kind of manufacture method of above-mentioned semiconductor solenoid inductor, in turn include the following steps:
(1) chemical wet etching forms lower metal bar 2, as shown in Figure 5;
(2) make insulating barrier on described lower metal bar 2, cover described lower metal bar 2 fully, described insulating barrier is made of dielectric 5, as shown in Figure 6;
(3) on the insulating barrier of step (2) deposit, make magnetic core 3, as shown in Figure 7;
(4) on magnetic core 3, make the insulating barrier that constitutes by dielectric 5 again, cover described magnetic core 3 fully, as shown in Figure 8;
(5) make contact hole 4, described contact hole 4 is drawn the two ends of described lower metal bar, as shown in Figure 9;
(6) chemical wet etching forms upper strata bonding jumper 1 on the insulating barrier of step (4) deposit, makes upper strata bonding jumper 1 and described lower metal bar end to end successively by contact hole, forms one along the solenoid of same directional ring around described magnetic core, as shown in figure 10.
The method of making insulating barrier in described step (2) and the step (4) is to utilize chemical vapor deposition to form insulating barrier earlier, then insulating barrier is carried out chemico-mechanical polishing.
The method of making described magnetic core in the described step (3) is to utilize the method deposit magnetic core film of physical vapor deposition or chemical vapor deposition earlier, then with photoetching lithographic method making formation magnetic core.
In the present invention, described upper strata bonding jumper or lower metal bar can be made with the metal interconnecting wires when anterior layer, and described dielectric can adopt materials such as silicon dioxide, and core material can be nickel, cobalt, iron etc.
In sum, bonding jumper interconnects the mode of twining with magnetic core between different layers by adopting in the present invention, has effectively improved magnetic flux density, and has reduced the shared chip area of semiconductor inductance, has improved the integrated level of chip.
Claims (6)
1. semiconductor solenoid inductor, it is characterized in that, comprise a plurality of upper stratas bonding jumper and a plurality of lower metal bar, a magnetic core is clipped between described upper strata bonding jumper and the described lower metal bar, described upper strata bonding jumper and described lower metal bar are end to end successively by contact hole, form one along the solenoid of same directional ring, be enclosed with dielectric around the described magnetic core around described magnetic core.
2. semiconductor solenoid inductor according to claim 1 is characterized in that, described magnetic core is a strip.
3. semiconductor solenoid inductor according to claim 1 is characterized in that, described magnetic core is a ring-type.
4. the manufacture method as any described semiconductor solenoid inductor in the claim 1～3 is characterized in that, in turn includes the following steps:
(1) chemical wet etching forms the lower metal bar;
(2) on described lower metal bar, make insulating barrier, cover described lower metal bar fully;
(3) on the insulating barrier of step (2) deposit, make magnetic core;
(4) on magnetic core, make insulating barrier again, cover described magnetic core fully;
(5) make contact hole, described contact hole is drawn the two ends of described lower metal bar;
(6) chemical wet etching forms the upper strata bonding jumper on the insulating barrier of step (4) deposit, makes upper strata bonding jumper and described lower metal bar end to end successively by contact hole, forms one along the solenoid of same directional ring around described magnetic core.
5. the manufacture method of semiconductor solenoid inductor according to claim 4, it is characterized in that, the method of making insulating barrier in described step (2) and the step (4) is to utilize chemical vapor deposition to form insulating barrier earlier, then insulating barrier is carried out chemico-mechanical polishing.
6. the manufacture method of semiconductor solenoid inductor according to claim 4, it is characterized in that, the method of making described magnetic core in the step (3) is to utilize the method deposit magnetic core film of physical vapor deposition or chemical vapor deposition earlier, then with photoetching lithographic method making formation magnetic core.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810044019A CN101740195A (en) | 2008-11-27 | 2008-11-27 | Semiconductor solenoid inductor and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810044019A CN101740195A (en) | 2008-11-27 | 2008-11-27 | Semiconductor solenoid inductor and manufacture method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101740195A true CN101740195A (en) | 2010-06-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN200810044019A Pending CN101740195A (en) | 2008-11-27 | 2008-11-27 | Semiconductor solenoid inductor and manufacture method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465329A (en) * | 2014-12-18 | 2015-03-25 | 江苏长电科技股份有限公司 | Technique for arranging annular magnetic core inductor in substrate |
| CN111146185A (en) * | 2019-05-30 | 2020-05-12 | 福建省福联集成电路有限公司 | Inductor and manufacturing method thereof |
| WO2022151691A1 (en) * | 2021-01-14 | 2022-07-21 | 长鑫存储技术有限公司 | Semiconductor structure and manufacturing method therefor |
-
2008
- 2008-11-27 CN CN200810044019A patent/CN101740195A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465329A (en) * | 2014-12-18 | 2015-03-25 | 江苏长电科技股份有限公司 | Technique for arranging annular magnetic core inductor in substrate |
| CN111146185A (en) * | 2019-05-30 | 2020-05-12 | 福建省福联集成电路有限公司 | Inductor and manufacturing method thereof |
| WO2022151691A1 (en) * | 2021-01-14 | 2022-07-21 | 长鑫存储技术有限公司 | Semiconductor structure and manufacturing method therefor |
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Application publication date: 20100616 |