CN110277376B - Air bridge integrated inductor and manufacturing method thereof - Google Patents
Air bridge integrated inductor and manufacturing method thereof Download PDFInfo
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- CN110277376B CN110277376B CN201910374018.0A CN201910374018A CN110277376B CN 110277376 B CN110277376 B CN 110277376B CN 201910374018 A CN201910374018 A CN 201910374018A CN 110277376 B CN110277376 B CN 110277376B
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
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Abstract
The invention discloses an air bridge integrated inductor and a manufacturing method thereof, comprising the following steps: manufacturing a first inductance metal layer on a substrate; manufacturing a first layer of light resistance on the first inductance metal layer, and etching the pier position of the air bridge to be manufactured to form a groove; manufacturing a metal connecting layer on the first layer of light resistance and the groove; manufacturing a second layer of light resistance on the metal connecting layer; exposing and developing the second layer of light resistance, and removing the metal connecting layer of the groove part to form an air bridge path; manufacturing a second inductance metal layer on the second layer of light resistance, wherein the second inductance metal layer is connected with the first inductance metal layer at the groove position; and removing the first layer of photoresist, the metal connecting layer and the second layer of photoresist. The air bridge integrated inductor takes the second inductor metal layer as a main body metal so as to enable the inductor coil to present three-dimensional distribution, reduce vortex current while improving inductor magnetic flux to increase inductance value, and improve quality factor Q value and performance of the inductor coil.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a manufacturing method of an air bridge integrated inductor and the integrated inductor.
Background
In the prior art, most of the integrated inductors are of a planar structure, and because the integrated inductors are manufactured on a plane parallel to a substrate, Eddy Current (Eddy Current) can be formed in the substrate under a high-frequency condition, the direction of the Eddy Current is opposite to that of Current in an inductance coil, which leads to reduction of magnetic flux of the inductance coil, extra energy loss is large, and the Q value of the whole inductor is reduced. In addition, in the prior art, due to the limitation of the manufacturing process and materials of the integrated circuit, it is difficult to achieve high inductance and high Q factor at the same time.
The inductor in the prior art is prepared by the following steps: firstly, evaporating an inductor main body metal (a first layer of metal) on a substrate, and leading out two ends of the inductor main body; secondly, covering a protective layer under the condition that the metal evaporation of the inductor main body is finished; thirdly, carrying out a planarization process on the basis of the step two; fourth, a second metal layer is deposited, which connects the individual first metal layers along the contour of the planarization layer material.
Disclosure of Invention
Therefore, a novel preparation method of the air bridge integrated inductor is needed to be provided, and the problems that the inductor prepared by the prior art is low in inductance value and high in quality factor Q value of the inductor are solved.
In order to achieve the above object, the inventor provides a method for manufacturing an air bridge integrated inductor, comprising the following steps:
a manufacturing method of an air bridge integrated inductor is characterized by comprising the following steps:
manufacturing a first inductance metal layer on a substrate;
manufacturing a first layer of light resistance on the first inductance metal layer, and etching the pier position of the air bridge to be manufactured to form a groove;
manufacturing a metal connecting layer on the first layer of light resistance and the groove;
manufacturing a second layer of light resistance on the metal connecting layer;
exposing and developing the second layer of light resistance, and removing the metal connecting layer of the groove part to form an air bridge path;
manufacturing a second inductance metal layer on a second layer of light resistance forming an air bridge path, wherein the second inductance metal layer is connected with the first inductance metal layer at the groove position;
and removing the first layer of photoresist, the metal connecting layer and the second layer of photoresist.
Further, the first inductance metal layer comprises more than two parallel laminated plate structures.
Further, the air bridge projection and the connected parallel laminates form a Z-shaped structure.
Furthermore, two ends of the air bridge are respectively connected with different laminates.
Further, the projections of the air bridge paths on the substrate are parallel to each other.
Further, the air bridge is in a semicircular arc shape.
Further, the first inductance metal layer is formed in an evaporation or electroplating deposition mode.
Further, the second inductance metal layer is formed in an evaporation or electroplating deposition mode.
Furthermore, the metal connecting layer is manufactured by adopting a sputtering process.
The inventor also provides an air bridge integrated inductor, which is manufactured by the method in any one of the above-mentioned methods.
Different from the prior art, the technical scheme adopts the air bridge process, so that the two ends of the second inductance metal layer are respectively connected with the first metal layer, and the metal middle part is in a suspended state in a three-dimensional space. The air bridge integrated inductor takes the second inductor metal layer as main body metal to enable the inductor coil to be in three-dimensional distribution, and the structure improves the inductance flux to increase the inductance value, reduces the vortex current and improves the quality factor Q value and the performance of the inductor coil. Compared with the existing planar inductor, the air bridge integrated inductor reduces the occupation of the surface area of a wafer, improves the integration level of a chip and reduces the production cost of the chip.
Drawings
FIG. 1 is a schematic structural diagram of a first inductor metal layer;
FIG. 2 is a schematic diagram of a structure of a first photoresist layer on a first inductor metal layer
FIG. 3 is a schematic diagram of the structure after etching the first layer of photoresist to form a recess;
FIG. 4 is a schematic structural diagram of a metal connection layer;
FIG. 5 is a schematic view of a structure with a second photoresist layer;
FIG. 6 is a schematic diagram of the structure of the air bridge path formed by exposing and developing the second layer of photoresist;
FIG. 7 is a schematic structural diagram of a second inductor metal layer;
FIG. 8 is a schematic structural diagram of an air bridge integrated inductor after removing a first photoresist layer, a metal connection layer and a second photoresist layer
FIG. 9 is a schematic view of the three-dimensional structure after the air bridge pier of the first photoresist layer is etched to form a groove and the groove is developed;
FIG. 10 is a perspective view of an air bridge;
FIG. 11 is a schematic structural view of an air bridge integrated inductor (A \ B \ C \ D \ E \ F \ G is a groove position)
Description of reference numerals:
1. a first inductor metal layer;
2. a first layer of photoresist;
21. groove
3. A metal connection layer;
4. a second layer of photoresist;
5. a second inductor metal layer.
Detailed Description
To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.
Referring to fig. 1 to fig. 11, the present embodiment provides a method for manufacturing an air bridge integrated inductor, which is used on a wafer, and can reduce the occupation of the surface area of the wafer, improve the integration level of the chip, and reduce the production cost of the chip.
The invention comprises the following steps:
manufacturing a first inductance metal layer 1 on a substrate in a vapor deposition mode; AE, BF, CG, DH, I, J in FIG. 11 are all the first inductance metal layers; wherein AE, BF, CG and DH are parallel layer plate structures.
Manufacturing a first layer of light resistance 2 on the first inductance metal layer 1, and etching the pier position of an air bridge to be manufactured to form a groove 21; in the embodiment, the first layer of photoresist and the etching thereof adopt PO photoresist photoetching to etch the A/B/C/D/E/F/G/H point photoresist to form a groove, and the area of the opening of the groove is larger than that of the bottom, so that the trapezoidal pier is conveniently formed in the later period.
Manufacturing a metal connecting layer 3 on the first layer of light resistance 2 and the groove 21 by a metal sputtering process; so that the whole first layer of photoresist plane and the photoresist groove are covered by the sputtered metal. The metal connecting layer is used for facilitating the removal of the first inductance metal layer and has no etching-resistant buffer effect. The metal in the metal connecting layer is made of easily corroded metal, the metal connecting layer is made to be thin through a sputtering process, and meanwhile the metal connecting layer has strong binding force with the first layer of light resistance and assists in removing the first inductance metal layer in the later period.
Manufacturing a second layer of light resistance 4 on the metal connecting layer 3; exposing and developing on the second layer of photoresist 4 to form the air bridge path; wherein the metal connection layer 3 of the recess 21 portion is removed in the process. In the embodiment, the second layer of light resistance and the development thereof adopt a photoetching process of BR light resistance, and the BR light resistance at AF, BG and CH is selectively developed to form an air bridge path; the air bridge path is in a semi-circular arc shape. The projections of the air bridge and the connected parallel plates form a Z-shaped structure, and the projections of the air bridge paths on the substrate are parallel to each other.
Depositing a second inductance metal layer 5 on the second layer of light resistance 4 by an evaporation method; the second inductance metal layer 5 is connected with the first inductance metal layer 1 at the position of the groove 21; AF. BG, CH air bridges are formed.
And finally, removing the first layer of light resistance 2, the metal connecting layer 3 and the second layer of light resistance 5 to obtain the air bridge integrated inductor.
The invention provides an air bridge integrated inductor, which is manufactured by the method. The air bridge integrated inductor prepared by the method.
Compared with the existing integrated inductor, the air bridge integrated inductor has the advantages that the second inductor metal layer is used as the connecting metal for connecting the first inductor metal layer and also used as the inductor main body metal for forming the three-dimensional air bridge inductor, two ends of the second inductor metal layer are respectively connected with the first inductor metal layer, the middle part of the metal is in a suspended state in a three-dimensional space, the structure enables the inductor coil to be in three-dimensional distribution, the inductance flux is improved, the inductance value is increased, the vortex current is reduced, and the quality factor Q value and the performance of the inductor coil are improved. The second inductor metal layer of the conventional integrated inductor is merely used as a connecting wire of the first inductor metal layer and is attached to the planarization material in a climbing manner.
Compared with the planar inductor, the three-dimensional inductor prepared by the invention reduces the occupation of the surface area of the wafer, improves the integration level of the chip and reduces the production cost of the chip.
It should be noted that, although the above embodiments have been described herein, the invention is not limited thereto. Therefore, based on the innovative concepts of the present invention, the technical solutions of the present invention can be directly or indirectly applied to other related technical fields by making changes and modifications to the embodiments described herein, or by using equivalent structures or equivalent processes performed in the content of the present specification and the attached drawings, which are included in the scope of the present invention.
Claims (10)
1. A manufacturing method of an air bridge integrated inductor is characterized by comprising the following steps:
manufacturing a first inductance metal layer on a substrate;
manufacturing a first layer of light resistance on the first inductance metal layer, and etching the pier position of the air bridge to be manufactured to form a groove;
manufacturing a metal connecting layer on the first layer of light resistance and the groove;
manufacturing a second layer of light resistance on the metal connecting layer;
exposing and developing the second layer of light resistance, and removing the metal connecting layer of the groove part to form an air bridge path;
manufacturing a second inductance metal layer on a second layer of light resistance forming an air bridge path, wherein the second inductance metal layer is connected with the first inductance metal layer at the groove position;
and removing the first layer of photoresist, the metal connecting layer and the second layer of photoresist.
2. The method of claim 1, wherein the first inductor metal layer comprises at least two parallel plate structures.
3. The method as claimed in claim 2, wherein the projection of the air bridge on the substrate and the connected parallel plates form a zigzag structure.
4. The method of claim 2, wherein the projections of the air bridge paths onto the substrate are parallel to each other.
5. The method of claim 1, wherein the air bridge is shaped as a half-circular arc.
6. The method as claimed in claim 1, wherein two ends of the air bridge are respectively connected to different laminate boards.
7. The method as claimed in claim 1, wherein the first inductor metal layer is formed by evaporation or electroplating deposition.
8. The method of claim 1, wherein the second inductor metal layer is formed by evaporation or electroplating deposition.
9. The method as claimed in claim 1, wherein the metal connection layer is formed by sputtering.
10. Air bridge integrated inductor, its characterized in that: the air bridge integrated inductor is manufactured by the method of any one of claims 1 to 9.
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| CN110767634B (en) * | 2019-10-11 | 2021-12-10 | 福建省福联集成电路有限公司 | Sunken spiral inductor structure and manufacturing method thereof |
| CN111063659B (en) * | 2019-11-28 | 2022-08-19 | 福建省福联集成电路有限公司 | Passive device with double-layer structure and manufacturing method |
| CN113764261B (en) * | 2020-10-15 | 2023-08-22 | 腾讯科技（深圳）有限公司 | Hollow bridge structure and manufacturing method thereof, superconducting quantum chip and manufacturing method thereof |
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| CN101373734A (en) * | 2007-08-22 | 2009-02-25 | 中国科学院半导体研究所 | Method for preparing nanometer dimension nickel-gold air bridge |
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| JPH08167647A (en) * | 1994-12-13 | 1996-06-25 | Matsushita Electric Ind Co Ltd | Formation of metallic wiring for semiconductor integrated circuit |
| JP2000269418A (en) * | 1999-03-17 | 2000-09-29 | Sony Corp | Wiring structure, inductor and formation method therefor |
| US6798064B1 (en) * | 2000-07-12 | 2004-09-28 | Motorola, Inc. | Electronic component and method of manufacture |
| KR101043343B1 (en) * | 2008-12-30 | 2011-06-21 | (재)나노소자특화팹센터 | Method for manufacturing air-bridge using negative photoresist |
| CN106744661B (en) * | 2016-12-27 | 2018-07-06 | 成都海威华芯科技有限公司 | A kind of passive device high quality factor inductance production method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101373734A (en) * | 2007-08-22 | 2009-02-25 | 中国科学院半导体研究所 | Method for preparing nanometer dimension nickel-gold air bridge |
Non-Patent Citations (2)
| Title |
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| Modelling of double air-bridged structured inductor implemented by a GaAs integrated passive device manufacturing process;Li, Y等;《SEMICONDUCTOR SCIENCE AND TECHNOLOGY》;20170327;全文 * |
| 空气桥玻璃芯片电感;林毅等;《固体电子学研究与进展》;19920525(第02期);全文 * |
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