CN111139460A - Radio frequency leading-in device and semiconductor processing equipment - Google Patents
Radio frequency leading-in device and semiconductor processing equipment Download PDFInfo
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- CN111139460A CN111139460A CN201911376061.7A CN201911376061A CN111139460A CN 111139460 A CN111139460 A CN 111139460A CN 201911376061 A CN201911376061 A CN 201911376061A CN 111139460 A CN111139460 A CN 111139460A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- 238000012545 processing Methods 0.000 title claims abstract description 16
- 230000007246 mechanism Effects 0.000 claims abstract description 97
- 238000000034 method Methods 0.000 claims abstract description 56
- 230000008569 process Effects 0.000 claims abstract description 56
- 239000013078 crystal Substances 0.000 claims abstract description 10
- 238000003825 pressing Methods 0.000 claims description 9
- 238000002161 passivation Methods 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 8
- 230000002457 bidirectional effect Effects 0.000 abstract 1
- 238000013461 design Methods 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- 229910010293 ceramic material Inorganic materials 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The embodiment of the application provides a radio frequency leading-in device and semiconductor processing equipment. The radio frequency introducing device is used for introducing radio frequency to a crystal boat positioned inside a semiconductor process furnace and comprises the following components: the device comprises a supporting mechanism, a front radio frequency mechanism and a rear radio frequency mechanism; the supporting mechanism comprises a supporting rod, the first end of the supporting rod is connected with the furnace mouth of the semiconductor process furnace, and the second end of the supporting rod is connected with the furnace tail of the semiconductor process furnace; the front radio frequency mechanism and the rear radio frequency mechanism are arranged on the supporting rod in parallel and used for bearing the wafer boat; the front radio frequency mechanism is arranged close to the first end of the supporting rod, and the rear radio frequency mechanism is arranged close to the second end of the supporting rod; the front radio frequency mechanism is electrically connected with one end of the wafer boat, and the rear radio frequency mechanism is electrically connected with the other end of the wafer boat. The embodiment of the application realizes the bidirectional introduction of the radio frequency of the crystal boat, thereby changing the current direction between the anode and the cathode of the crystal boat in a semiconductor process furnace and further improving the uniformity and passivation effect of the process.
Description
Technical Field
The application relates to the technical field of semiconductor processing, in particular to a radio frequency leading-in device and semiconductor processing equipment.
Background
Currently, solar cells are an important option for solving increasingly severe energy and environmental problems, and crystalline silicon cells have always occupied a significant market share throughout the entire photovoltaic industry due to their advantages in cost and efficiency. After many years of research and development, Light Management (Light Management) and passivation (passivation) have been recognized as effective ways to improve the efficiency of crystalline silicon cells. Generally, light management is mainly to treat the light receiving surface of the cell, including surface texturing and adding an antireflection film, so as to greatly improve the absorption of incident sunlight; passivation is the deposition of certain dielectric materials on the front and back surfaces of the cell to reduce molecular recombination caused by surface defects.
In the actual production process of the crystalline silicon battery, the preparation of the anti-reflective film and/or the passivation film is generally realized by using a Plasma Enhanced Chemical Vapor Deposition (PECVD) apparatus. For example, for an aluminum back surface field P-type cell which is dominant in the crystalline silicon cell industry, SiNx H is deposited on the surface (namely a light receiving surface) of an N-type emitter by using PECVD equipment, and the N-type emitter can play roles in antireflection and passivation at the same time; for the currently growing Passivated emitter and back Cell (PERC), the AlOx/SiNx stack is considered to have a better back passivation effect, and both films can be prepared by PECVD equipment. In the prior art, a substrate of a crystalline silicon battery is generally carried by a wafer boat, and then the wafer boat is placed into a PECVD (plasma enhanced chemical vapor deposition) device for processing. But the prior connection mode of the electrode and the wafer boat leads to poor process performance; in addition, the wafer boat and the electrodes of the equipment are required to be connected in each process, so that the process efficiency is influenced due to inconvenient operation, and the safety and the stability are influenced.
Disclosure of Invention
The application provides a radio frequency introducing device and semiconductor processing equipment aiming at the defects of the prior art, and aims to solve the technical problems of poor process performance, low process efficiency and poor safety and stability in the prior art.
In a first aspect, an embodiment of the present application provides an rf introducing apparatus for introducing rf into a substrate boat inside a semiconductor process furnace, including: the device comprises a supporting mechanism, a front radio frequency mechanism and a rear radio frequency mechanism; the supporting mechanism comprises a supporting rod, a first end of the supporting rod is connected with a furnace mouth of the semiconductor process furnace, and a second end of the supporting rod is connected with a furnace tail of the semiconductor process furnace; the front radio frequency mechanism and the rear radio frequency mechanism are arranged on the supporting rod in parallel and used for bearing the wafer boat; the front radio frequency mechanism is arranged close to the first end of the supporting rod, and the rear radio frequency mechanism is arranged close to the second end of the supporting rod; the front radio frequency mechanism is electrically connected with one end of the crystal boat, and the rear radio frequency mechanism is electrically connected with the other end of the crystal boat.
In an embodiment of the present application, the supporting mechanism includes two supporting rods arranged in parallel, and the first end and the second end of the supporting rods are both connected to the flange of the semiconductor process furnace.
In an embodiment of the present application, the front rf mechanism includes two front bearing blocks, and the two front bearing blocks are respectively sleeved on the two support rods and used for bearing the front end of the wafer boat; the rear radio frequency mechanism comprises two rear bearing blocks, and the two rear bearing blocks are respectively sleeved on the two supporting rods and used for bearing the rear ends of the crystal boats; the front radio frequency mechanism further comprises a front lead-in piece and a front lead-in part, the front lead-in piece is arranged on the supporting rod and is positioned between the rear radio frequency mechanism and the second end of the supporting rod, and the front lead-in piece is electrically connected with the front lead-in part; the front radio frequency mechanism further comprises a connecting rod, and two ends of the connecting rod are electrically connected with the front bearing block and the front leading-in piece respectively.
In an embodiment of the present application, the connecting rod is covered with an insulating sleeve.
In an embodiment of the present application, the front rf mechanism further includes a positioning element, and the positioning element is fixedly disposed on the supporting rod and used for positioning the front bearing block.
In an embodiment of the present application, a protrusion is disposed on the positioning element, a clamping groove is disposed on the front bearing block, and the protrusion and the clamping groove are cooperatively disposed to position the front bearing block.
In an embodiment of the present application, the rear rf mechanism further includes a rear introducing part and a rear introducing part, the rear introducing part is disposed between the two rear bearing blocks, the rear introducing part is electrically connected to the two rear bearing blocks, and the rear introducing part is electrically connected to the rear introducing part.
In an embodiment of the present application, the supporting mechanism further includes a plurality of supporting blocks and a plurality of pressing plates, the supporting blocks are respectively sleeved on the ends of the first end of the supporting rod and the second end of the supporting rod, and the supporting blocks are disposed on the flange through the pressing plates.
In an embodiment of the present application, a guard bar is disposed inside the supporting bar for improving the strength and toughness of the supporting bar.
In a second aspect, embodiments of the present application provide a semiconductor processing apparatus comprising a semiconductor processing furnace and an rf introduction device as provided in the first aspect.
The technical scheme provided by the embodiment of the application has the following beneficial technical effects:
according to the embodiment of the application, the supporting rod is arranged in the semiconductor process furnace, and then the front radio frequency mechanism and the rear radio frequency mechanism which are arranged in parallel are respectively connected with the first electrode and the second electrode to be matched with each other to introduce radio frequency into the wafer boat, so that the radio frequency of the wafer boat is introduced in a two-way mode, the current direction between the anode and the cathode of the wafer boat in the semiconductor process furnace is changed, and the uniformity and the passivation effect of the process are improved. In addition, the front radio frequency mechanism and the rear radio frequency mechanism are fixedly arranged in the semiconductor process furnace, and the wafer boat can be directly positioned and contacted with the front radio frequency mechanism and the rear radio frequency mechanism, so that repeated positioning between the process wafer boat and an electrode at each time can be avoided, the safety and the stability are improved, and the process efficiency can be effectively improved.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
The foregoing and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic top view of an rf lead-in device according to an embodiment of the present disclosure;
fig. 2 is a schematic left-side view illustrating a radio frequency introducing device according to an embodiment of the present disclosure in cooperation with a semiconductor processing furnace;
fig. 3A is a schematic structural view illustrating a matching structure of a positioning member, a supporting rod and a front bearing block according to an embodiment of the present disclosure;
FIG. 3B is a schematic cross-sectional view A-A of the structure shown in FIG. 3A.
Detailed Description
Reference will now be made in detail to the present application, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar parts or parts having the same or similar functions throughout. In addition, if a detailed description of the known art is not necessary for illustrating the features of the present application, it is omitted. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application.
It will be understood by those within the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The following describes the technical solutions of the present application and how to solve the above technical problems with specific embodiments.
The embodiment of the present application provides a radio frequency introducing device for introducing radio frequency to a wafer boat located inside a semiconductor process furnace 100, and the structure schematic diagram of the radio frequency introducing device is shown in fig. 1 and fig. 2, and the radio frequency introducing device includes: the radio frequency device comprises a supporting mechanism 1, a front radio frequency mechanism 2 and a rear radio frequency mechanism 3; the supporting mechanism 1 comprises a supporting rod 11, the supporting rod 11 is arranged inside the semiconductor process furnace 100, a first end 12 of the supporting rod 11 is connected with a furnace mouth of the semiconductor process furnace 100, and a second end 13 of the supporting rod 11 is connected with a furnace tail of the semiconductor process furnace 100; the front radio frequency mechanism 2 and the rear radio frequency mechanism 3 are arranged on the support rod 11 in parallel and used for bearing the wafer boat; the front radio frequency mechanism 2 is arranged close to the first end 12 of the support rod 11, and the rear radio frequency mechanism 3 is arranged close to the second end 13 of the support rod 11; the front radio frequency mechanism 2 is electrically connected with one end of the wafer boat, and the rear radio frequency mechanism 3 is electrically connected with the other end of the wafer boat.
As shown in fig. 1, the rf introducing apparatus of the embodiment of the present invention can be applied to a horizontal Plasma Enhanced Chemical Vapor Deposition (PECVD) apparatus, and the semiconductor processing furnace 100 can be made of a horizontal quartz tube. It should be noted that, the embodiment of the present application is not limited to a specific application of the radio frequency introducing device, and a person skilled in the art may adjust the setting according to actual situations. Specifically, the support rod 11 may be a rod-shaped structure made of a ceramic material, the first end 12 of the support rod 11 may be connected to the furnace mouth of the semiconductor process furnace 100, and the second end 13 of the support rod 11 may be connected to the furnace tail of the semiconductor process furnace 100, but the present application is not limited thereto, and for example, the positions of the two ends of the support rod 11 may be changed. The front radio frequency mechanism 2 and the rear radio frequency mechanism 3 can be arranged on the support rod 11 in parallel, and the front radio frequency mechanism 2 can be arranged near the first end 12, namely the front radio frequency mechanism 2 can be arranged near the furnace mouth; the rear radiofrequency mechanism 3 can then be arranged close to the second end 13, i.e. the rear radiofrequency mechanism 3 can be arranged close to the furnace tail. The front radio frequency mechanism 2 and the rear radio frequency mechanism 3 can be matched for bearing the wafer boat and are electrically connected with two ends of the wafer boat. The front rf mechanism 2 and the rear rf mechanism 3 may be connected to a first electrode and a second electrode (not shown) respectively for introducing rf to the front and rear ends of the wafer boat. Alternatively, the first electrode may be a positive electrode, and the second electrode may be a negative electrode, but the embodiment of the present application is not limited thereto, and the first electrode and the second electrode may be interchanged.
According to the embodiment of the application, the supporting rod is arranged in the semiconductor process furnace, and then the front radio frequency mechanism and the rear radio frequency mechanism which are arranged in parallel are respectively connected with the first electrode and the second electrode to be matched with each other to introduce radio frequency into the wafer boat, so that the radio frequency of the wafer boat is introduced in a two-way mode, the current direction between the anode and the cathode of the wafer boat in the semiconductor process furnace is changed, and the uniformity and the passivation effect of the process are improved. In addition, the front radio frequency mechanism and the rear radio frequency mechanism are fixedly arranged in the semiconductor process furnace, and the wafer boat can be directly positioned and contacted with the front radio frequency mechanism and the rear radio frequency mechanism, so that repeated positioning between the process wafer boat and an electrode at each time can be avoided, the safety and the stability are improved, and the process efficiency can be effectively improved.
In the present embodiment, the specific implementation of the support rod 11 is not limited, and for example, the support rod 11 may be made of other high-temperature-resistant insulating materials. Therefore, the embodiment of the present application does not limit this, and those skilled in the art can adjust the setting according to the actual situation.
In an embodiment of the present application, as shown in fig. 1 and 2, the supporting mechanism 1 includes two supporting rods 11 disposed in parallel, and a first end 12 and a second end 13 of each supporting rod 11 are connected to a flange 101 of the semiconductor processing furnace 100. Specifically, two support rods 11 may be arranged in parallel in the semiconductor process furnace 100, and when the semiconductor process furnace 100 is a quartz tube, the first end 12 and the second end 13 of the support rods 11 may be fixedly connected to the flanges 101 at the two ends of the quartz tube. By adopting the design, the direct bearing of the semiconductor process furnace can be avoided, but the bearing is realized by the flange 101, the damage of the radio frequency introducing device and the boat to the semiconductor process furnace 100 can be prevented, so that the safety and the stability can be effectively improved, the fault rate of the semiconductor process furnace 100 can be effectively reduced, and the maintenance and use cost can be further reduced.
In an embodiment of the present application, the front rf mechanism 2 includes two front bearing blocks 21, and the two front bearing blocks 21 are respectively sleeved on the two support rods 11 for bearing the front ends of the wafer boat; the rear rf mechanism 3 includes two rear bearing blocks 31, and the two rear bearing blocks 31 are respectively sleeved on the two support rods 11 and are used for bearing the rear end of the wafer boat.
As shown in fig. 1 and fig. 2, the front rf mechanism 2 may include two front bearing blocks 21, the front bearing blocks 21 may be made of a conductive material, and the two front bearing blocks 21 may be respectively sleeved on the two support rods 11. The two front bearing blocks 21 can be connected with the two boat feet at the front end of the wafer boat, i.e. the two front bearing blocks 21 are matched with the two boat feet near the furnace mouth. The rear rf mechanism 3 may also include two rear bearing blocks 31, the rear bearing blocks 31 may also be made of a conductive material, the two rear bearing blocks 31 may be respectively sleeved on the two support rods 11, and the two rear bearing blocks 31 may be connected to two boat legs at the rear end of the wafer boat. By adopting the design, the front and rear introduction blocks are connected with the four boat feet of the wafer boat, so that the contact area between the radio frequency introduction device and the wafer boat can be greatly increased, the conductivity can be greatly increased, and the process performance and the effect can be improved.
It should be noted that, the embodiment of the present application is not limited to the specific implementation of the front and rear bearing blocks 31, for example, both of them may be made of metal material, and may be disposed on the supporting rod 11 in a threaded manner or a clamping manner. Therefore, the embodiment of the present application does not limit this, and those skilled in the art can adjust the setting according to the actual situation.
In an embodiment of the present application, the front rf mechanism 2 further includes a front lead-in 22 and a front lead-in 23, the front lead-in 22 is disposed on the supporting rod 11 and located between the rear rf mechanism 3 and the second end 13 of the supporting rod 11, and the front lead-in 22 is electrically connected to the front lead-in 23.
As shown in fig. 1 and 2, the front lead-in member 22 may be a plate-shaped structure made of a metal material. The two ends of the front lead-in member 22 may be respectively sleeved on the two support rods 11 and fixedly connected with the two support rods 11, for example, the front lead-in member may be fixedly disposed in a clamping manner or a bolt connection manner, but the embodiment of the present invention is not limited thereto. The front lead-in part 23 may be a sleeve structure, which may be an integral structure with the front lead-in part 22 for connecting with the rod-shaped first electrode, but the embodiment of the present application is not limited thereto. Because the front lead-in member 22 is disposed at a position close to the second end 13, the first electrode can be led in from the furnace tail of the semiconductor process furnace 100, so that the furnace mouth space can be effectively saved, and the embodiment of the present application can be simple in structure and easy to use and maintain.
It should be noted that the embodiment of the present application is not limited to the specific implementation of the front lead-in member 22, for example, the front lead-in member 22 may be separately disposed on any one of the support rods 11, and is not necessarily disposed on both of the support rods 11. Therefore, the embodiment of the present application does not limit this, and those skilled in the art can adjust the setting according to the actual situation.
In an embodiment of the present application, the front rf mechanism 2 further includes a connecting rod 24, two ends of the connecting rod 24 are respectively connected to the front bearing block 21 and the front introducing element 22, and the connecting rod 24 is covered with an insulating sleeve 241. Optionally, the insulating sleeve 241 is a ceramic insulating sleeve.
As shown in fig. 1 and 2, the connecting rods 24 may be two, and the two connecting rods 24 are respectively connected to the two front bearing blocks 21 and are both connected to the front lead-in 22. The connecting rod 24 may also be a rod-shaped structure made of a conductive material, one end of the connecting rod 24 may be connected to the front lead-in member 22, the other end may be connected to the front bearing block 21, and both the connecting rods 24 may be located outside the two supporting rods 11. By adopting the design, the front lead-in piece 22 can be connected with the two front bearing blocks 21 by adopting the connecting rod 24, so that the structure of the embodiment of the application is simple, and the application and maintenance cost can be effectively reduced. Further, the outer side of the connecting rod 24 may include an insulating sleeve 241, and the insulating sleeve 241 may be made of a ceramic material. By adopting the design, the influence of the connecting rod 24 on the wafer boat in practical application can be avoided, so that the influence of the current in the connecting rod 24 on the process can be prevented, and the process performance and the effect can be improved. In addition, the insulating sleeve made of ceramic materials is adopted, so that the cost can be effectively reduced, and the economic efficiency is improved.
It should be noted that the embodiment of the present application does not limit the specific arrangement manner of the connecting rod 24, for example, the connecting rod 24 may also be arranged inside or above and below the supporting rod 11, and in addition, as shown in fig. 3A, the front bearing block 21 may have two mounting holes for connecting with two connecting rods 24, that is, each front bearing block 21 may be connected with the front lead-in 22 through two connecting rods 24. Therefore, the embodiment of the present application does not limit this, and those skilled in the art can adjust the setting according to the actual situation.
In an embodiment of the present application, as shown in fig. 3A and 3B, the front rf mechanism 2 further includes a positioning member 25, and the positioning member 25 is fixedly disposed on the supporting rod 11 for positioning the front bearing block 21. The positioning member 25 may be a snap ring structure made of metal or insulating material. The positioning member 25 can be sleeved on the supporting rod 11, and two ends of the positioning member 25 can be connected by bolts to position the front bearing block 21 on the supporting rod 11, so as to prevent the front bearing block 21 from rotating. By adopting the above design, when the front bearing block 21 is sleeved on the support rod 11, the positioning piece 25 can prevent the front bearing block 21 from rotating, so that the safety and the stability can be effectively improved. It should be noted that, the embodiment of the present application is not limited to the specific implementation of the positioning element 25, for example, the positioning element 25 may also have a positioning block structure, and the positioning grooves for matching and positioning are disposed on both the support rod 11 and the front bearing block 21. Therefore, the embodiment of the present application does not limit this, and those skilled in the art can adjust the setting according to the actual situation.
In an embodiment of the present application, as shown in fig. 3A and 3B, the positioning element 25 is provided with a protrusion 26, the front bearing block 21 is provided with a slot 27, and the protrusion 26 and the slot 27 are cooperatively arranged to position the front bearing block 21. A protrusion 26 may be disposed on a side of the positioning member 25 facing the front bearing block 21, and a locking groove 27 may be correspondingly disposed on a side of the front bearing block 21 facing the positioning member 25. In practical applications, the positioning member 25 is fixed on the supporting rod 11 in a snap-fit manner, and the protrusion 26 can extend into the slot 27 to position the front bearing block 21 on the supporting rod. By adopting the above design, the positioning piece 25 is provided with the projection 26 to position the front bearing block 21 on the support rod 11, so that the structure of the embodiment of the application is simple, and the application and maintenance cost is effectively reduced.
In an embodiment of the present application, as shown in fig. 1 and fig. 2, the rear rf mechanism 3 further includes a rear lead-in member 32 and a rear lead-in portion 33, the rear lead-in member 32 is disposed between the two rear bearing blocks 31, the rear lead-in member 32 is electrically connected to the two rear bearing blocks 31, and the rear lead-in portion 33 is electrically connected to the rear lead-in member 32. The rear inlet 32 may be a plate-shaped structure made of a metal material. The two end portions of the rear lead-in member 32 may be fixedly connected to the two rear bearing blocks 31, for example, the rear lead-in member may be fixedly disposed in a clamping manner or a bolt connection manner, but the embodiment of the present application is not limited thereto. The rear lead-in part 33 may be a sleeve structure, which may be integrally formed with the rear lead-in part 32 for connecting with the rod-shaped second electrode, but the embodiment of the present application is not limited thereto. Since the rear lead-in member 32 is disposed between the two rear bearing blocks 31, not only the two rear bearing blocks 31 can be fixed, but also the two rear bearing blocks 31 can be connected to facilitate the introduction of radio frequency. In addition, the second electrode can be introduced from the furnace tail of the semiconductor process furnace 100, so that the furnace mouth space can be effectively saved, and the structure of the embodiment of the application is simple and is easy to use and maintain.
In an embodiment of the present application, as shown in fig. 1 and 2, the supporting mechanism 1 further includes a plurality of supporting blocks 14 and a plurality of pressing plates 15, the supporting blocks 14 are sleeved on the first end 12 of the supporting rod 11 and the ends of the second end 13 of the supporting rod 11, and the supporting blocks 14 are disposed on the flange 101 through the pressing plates 15. The supporting block 14 and the pressing plate 15 may be formed in an integral manner, the supporting block 14 may be configured to be sleeved on the first end 12 and the second end 13 of the supporting rod 11, and the supporting block 14 may be connected with the first end 11 and the second end 13 of the supporting rod 11 by a screw connection, a clamping connection, or an adhesion connection, but the embodiment of the present invention is not limited thereto. The pressing plate 15 may be configured to have a circular arc structure, and may be attached to the inner side of the flange 101 and may be fixedly connected by bolts, but the embodiment of the present application does not limit the specific connection manner between the two. By adopting the design, the embodiment of the application has the advantages of simple structure, and convenience in disassembly and maintenance.
It should be noted that the embodiment of the present application does not necessarily include the supporting block 14 and the pressing plate 15, and the supporting rod 11 may be disposed on the flange 101 in various ways. Therefore, the embodiment of the present application does not limit this, and those skilled in the art can adjust the setting according to the actual situation.
In an embodiment of the present invention, as shown in fig. 1 and 2, a guard bar 16 is disposed inside the supporting bar 11 for improving the strength and toughness of the supporting bar 11. The support rod 11 is made of ceramic materials, so that the support rod not only can be suitable for the high-temperature environment in the semiconductor process furnace 100, but also can effectively reduce the application cost due to the lower cost of the ceramic materials. Furthermore, a guard bar 16 may be further disposed in the support bar 11, the guard bar 16 may specifically be a rod-shaped structure made of a metal material, and the support bar 11 may be wrapped outside the guard bar 16. By adopting the design, the supporting rod 11 can meet the requirement of insulativity, and the strength of the supporting rod 11 can be effectively improved, so that the wafer boat can be effectively prevented from falling into the semiconductor process furnace 100, the service life of the semiconductor process furnace 100 and the semiconductor processing equipment is prolonged, and the equipment productivity is improved.
The embodiment of the application provides semiconductor processing equipment which comprises a semiconductor process furnace and a radio frequency introducing device provided by the above embodiments.
By applying the embodiment of the application, at least the following beneficial effects can be realized:
according to the embodiment of the application, the supporting rod is arranged in the semiconductor process furnace, and then the front radio frequency mechanism and the rear radio frequency mechanism which are arranged in parallel are respectively connected with the first electrode and the second electrode to be matched with each other to introduce radio frequency into the wafer boat, so that the radio frequency of the wafer boat is introduced in a two-way mode, the current direction between the anode and the cathode of the wafer boat in the semiconductor process furnace is changed, and the uniformity and the passivation effect of the process are improved. In addition, the front radio frequency mechanism and the rear radio frequency mechanism are fixedly arranged in the semiconductor process furnace, and the wafer boat can be directly positioned and contacted with the front radio frequency mechanism and the rear radio frequency mechanism, so that repeated positioning between the process wafer boat and an electrode at each time can be avoided, the safety and the stability are improved, and the process efficiency can be effectively improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present invention.
The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The foregoing is only a partial embodiment of the present application, and it should be noted that, for those skilled in the art, several modifications and decorations can be made without departing from the principle of the present application, and these modifications and decorations should also be regarded as the protection scope of the present application.
Claims (10)
1. An rf introducing apparatus for introducing rf into a boat positioned inside a semiconductor process furnace, comprising: the device comprises a supporting mechanism, a front radio frequency mechanism and a rear radio frequency mechanism;
the supporting mechanism comprises a supporting rod, a first end of the supporting rod is connected with a furnace mouth of the semiconductor process furnace, and a second end of the supporting rod is connected with a furnace tail of the semiconductor process furnace;
the front radio frequency mechanism and the rear radio frequency mechanism are arranged on the supporting rod in parallel and used for bearing the wafer boat;
the front radio frequency mechanism is arranged close to the first end of the supporting rod, and the rear radio frequency mechanism is arranged close to the second end of the supporting rod;
the front radio frequency mechanism is electrically connected with one end of the crystal boat, and the rear radio frequency mechanism is electrically connected with the other end of the crystal boat.
2. The radio frequency introduction device according to claim 1, wherein the support mechanism comprises two support rods arranged side by side, and a first end and a second end of each support rod are connected with a flange of the semiconductor process furnace.
3. The radio frequency introduction device according to claim 2,
the front radio frequency mechanism comprises two front bearing blocks, and the two front bearing blocks are respectively sleeved on the two support rods and used for bearing the front ends of the crystal boats; the rear radio frequency mechanism comprises two rear bearing blocks, and the two rear bearing blocks are respectively sleeved on the two supporting rods and used for bearing the rear ends of the crystal boats;
the front radio frequency mechanism further comprises a front lead-in piece and a front lead-in part, the front lead-in piece is arranged on the supporting rod and is positioned between the rear radio frequency mechanism and the second end of the supporting rod, and the front lead-in piece is electrically connected with the front lead-in part;
the front radio frequency mechanism further comprises a connecting rod, and two ends of the connecting rod are electrically connected with the front bearing block and the front leading-in piece respectively.
4. The radio frequency introduction device according to claim 3, wherein the connecting rod is covered with an insulating sheath.
5. The radio frequency lead-in device according to claim 3, wherein the front radio frequency mechanism further comprises a positioning member, and the positioning member is fixedly disposed on the supporting rod and used for positioning the front bearing block.
6. The radio frequency introduction device according to claim 5, wherein the positioning member is provided with a protrusion, the front bearing block is provided with a slot, and the protrusion and the slot are cooperatively arranged to position the front bearing block.
7. The radio frequency lead-in device according to claim 3, wherein the rear radio frequency mechanism further comprises a rear lead-in member and a rear lead-in portion, the rear lead-in member is disposed between the two rear bearing blocks, the rear lead-in member is electrically connected to the two rear bearing blocks, and the rear lead-in portion is electrically connected to the rear lead-in member.
8. The rf lead-in device of claim 2, wherein the supporting mechanism further comprises a plurality of supporting blocks and a plurality of pressing plates, the supporting blocks are respectively sleeved on the ends of the first end of the supporting rod and the second end of the supporting rod, and the supporting blocks are disposed on the flange through the pressing plates.
9. The radio frequency introduction device according to claim 2, wherein a guard bar is provided within the support bar for increasing the stiffness of the support bar.
10. A semiconductor processing apparatus comprising a semiconductor processing furnace and a radio frequency introduction device as claimed in any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911376061.7A CN111139460A (en) | 2019-12-27 | 2019-12-27 | Radio frequency leading-in device and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911376061.7A CN111139460A (en) | 2019-12-27 | 2019-12-27 | Radio frequency leading-in device and semiconductor processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111139460A true CN111139460A (en) | 2020-05-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911376061.7A Withdrawn CN111139460A (en) | 2019-12-27 | 2019-12-27 | Radio frequency leading-in device and semiconductor processing equipment |
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| Country | Link |
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| CN (1) | CN111139460A (en) |
Cited By (1)
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| CN114411122A (en) * | 2022-01-20 | 2022-04-29 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and process chamber thereof |
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Application publication date: 20200512 |