CN111139450B - Mask assembly and manufacturing method thereof - Google Patents

Mask assembly and manufacturing method thereof Download PDF

Info

Publication number
CN111139450B
CN111139450B CN202010001378.9A CN202010001378A CN111139450B CN 111139450 B CN111139450 B CN 111139450B CN 202010001378 A CN202010001378 A CN 202010001378A CN 111139450 B CN111139450 B CN 111139450B
Authority
CN
China
Prior art keywords
mask
assembly
mask plate
reticle
concave part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010001378.9A
Other languages
Chinese (zh)
Other versions
CN111139450A (en
Inventor
王钰
王永茂
雒磊
岳小非
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Chengdu BOE Optoelectronics Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to CN202010001378.9A priority Critical patent/CN111139450B/en
Publication of CN111139450A publication Critical patent/CN111139450A/en
Application granted granted Critical
Publication of CN111139450B publication Critical patent/CN111139450B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04Coating on selected surface areas, e.g. using masks
    • C23C16/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45544Atomic layer deposition [ALD] characterized by the apparatus

Abstract

The invention relates to the field of display and discloses a mask component and a manufacturing method thereof, wherein the mask component is provided with a hollow area; and a concave part is formed on the side wall of at least one part of the hollow-out area. Through the hollow area on the mask plate assembly, the concave part is formed, the design mode can enable the edge of the mask plate assembly at the hollow area to generate vortex, the film forming gas at the edge of the mask plate assembly is gathered at the edge position, the film forming gas is prevented from entering the mask plate assembly, the distance of an over-boundary film coating area can be reduced, and the applicability of the atomic layer deposition technology is improved.

Description

Mask assembly and manufacturing method thereof
Technical Field
The invention relates to the technical field of display, in particular to a mask assembly and a manufacturing method of the mask assembly.
Background
Atomic layer deposition (ald) is a vapor deposition method that can deposit a substance onto a substrate surface layer by layer as a single atomic film. In an atomic layer deposition process, the chemical reaction of a new atomic film is directly related to the previous one in such a way that only one layer of atoms is deposited per reaction. The atomic layer deposition technology has wide application potential in the fields of micro-nano electronics, nano materials and the like due to the highly controllable deposition parameters such as thickness, composition and structure, and excellent deposition uniformity and consistency.
Because of the uniqueness of atomic deposition, a very long over-boundary coating area can be formed on the edge of a mask plate assembly on a substrate when an atomic film is formed, the edge of the film which influences the atomic layer deposition is irregular, and the applicability of the atomic layer deposition material is further influenced.
Disclosure of Invention
The invention discloses a mask assembly and a manufacturing method thereof, which can reduce the distance of an over-boundary coating area and improve the applicability of an atomic layer deposition technology.
In order to achieve the purpose, the invention provides the following technical scheme:
in a first aspect, the invention provides a mask assembly, which has a hollow area; and a concave part is formed on the side wall of at least one part of the hollow-out area.
In the field of thin film application, when the atomic layer deposition technology is used for depositing a thin film, an area which does not need to be formed on a substrate is deposited with the thin film, and meanwhile, a process for removing an over-boundary coating area may be added, so that the production cost is increased. The film edge irregularity which affects the atomic layer deposition further affects the applicability of the atomic layer deposition material. Through the concave part formed at the hollow area on the mask plate assembly, the design mode can enable the edge of the mask plate assembly at the hollow area to generate vortex, the film forming gas at the edge of the mask plate assembly is gathered at the edge position, the film forming gas is prevented from entering the lower part of the mask plate assembly, and therefore the distance of an over-boundary film coating area is reduced.
Furthermore, a first mask and a second mask are attached to each other along the thickness direction of the mask assembly;
the first mask plate is provided with a first concave part, the second mask plate is provided with a second concave part, and the first concave part is matched with the second concave part to form the concave part.
Further, a contact surface is formed between the first mask and the second mask;
the orthographic projection of the surface of one side, close to the second mask, of the first mask on the contact surface is superposed with the orthographic projection of the surface of one side, close to the first mask, of the second mask on the contact surface;
the orthographic projection of the surface of one side, far away from the first mask plate, of the second mask plate on the contact surface is larger than and covers the orthographic projection of the surface of one side, far away from the second mask plate, of the first mask plate on the contact surface.
Furthermore, the thickness of the first mask is smaller than or equal to that of the second mask.
Further, the thickness of the mask plate assembly is 25 μm-5 mm.
Furthermore, an electrostatic adsorption component is arranged between the first mask plate and the second mask plate, so that the first mask plate is attached to the second mask plate.
In a second aspect, the present invention provides a method for manufacturing a mask assembly, which is used for preparing the mask assembly according to any one of the first aspect, and includes:
etching the mask plate assembly to form the concave part;
and carrying out surface treatment on the mask plate assembly.
The manufacturing method of the mask assembly provided by the invention is used for manufacturing the mask assembly, can achieve the beneficial effects which can be achieved by the mask assembly, and is not repeated.
Further, the reticle assembly includes: a first mask and a second mask;
etching the first mask to form a first concave part; etching the second mask to form a second concave part;
and carrying out counterpoint adsorption on the first mask plate and the second mask plate so as to enable the first mask plate to be attached to the second mask plate.
Further, the first mask and the second mask are subjected to para-position adsorption, and the method comprises the following steps:
and the first mask plate and the second mask plate are aligned and attached under the atmospheric environment.
Further, the first mask plate and the second mask plate are adsorbed by static electricity.
Drawings
FIG. 1 is a schematic diagram of a mask assembly for atomic layer deposition of a thin film according to an embodiment of the present invention;
FIG. 2 is a schematic enlarged view of a part of FIG. 1 according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of a first reticle assembly according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a second reticle assembly according to an embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of a third reticle assembly provided in an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a reticle assembly including an electrostatic adsorption assembly according to an embodiment of the present invention;
fig. 7 is a cross-sectional view of an electrostatic adsorbing member assembly according to an embodiment of the invention;
FIG. 8 is a flowchart illustrating steps in a method for fabricating a reticle assembly according to an embodiment of the present invention;
fig. 9 is a flowchart illustrating a method for manufacturing a reticle assembly including an electrostatic chuck assembly according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
When the atomic layer deposition is carried out on the surface of the substrate, the mask plate assembly shields places which do not need to be deposited, but due to the technical characteristics of the atomic deposition, a long over-boundary coating area can appear in a film forming area which is not needed on the surface of the substrate.
Referring to fig. 1, fig. 1 is a schematic diagram illustrating a mask assembly 300 according to an embodiment of the present invention for depositing a thin film by an atomic layer 700 deposition technique; in a first aspect, an embodiment of the present invention provides a mask assembly 300, where the mask assembly 300 has a hollow area 100;
a recess 200 is formed on a sidewall of at least a portion of the hollow area 100.
It should be noted that, in the field of thin film application, when the atomic layer 700 deposition technique is used to deposit a thin film, an area on the substrate 500 where the thin film is not required to be deposited may be deposited with the thin film, and a process for removing the border plating area 600 may be added, which may increase the production cost. The applicability of the atomic layer 700 deposition material is affected by the irregularities of the film edges that affect the atomic layer 700 deposition. By forming the recessed portion 200 at the hollow area 100 of the mask assembly 300, the design method can generate a vortex at the edge of the mask assembly 300 at the hollow area 100, specifically, the arrow in fig. 1 indicates the gas flow direction, so as to collect the film forming gas at the edge of the mask assembly 300 at the edge position, prevent the film forming gas from entering under the mask assembly 300, and thus prevent the formation of the over-boundary film coating area 600.
Due to the design, the airflow generates vortex at the edge concave part 200 of the mask plate assembly 300, the film forming gas at the edge of the mask plate is gathered at the edge position, the film forming gas is prevented from entering the position below the mask plate, and therefore the over-boundary film coating area 600 is prevented from being formed.
As shown in fig. 2, the mask edge recess 200 is designed according to different air flow schemes, and the depth of the recess and the size of the opening of the edge recess 200 affect the degree of eddy current formed at the edge of the mask assembly 300 by the air flow, so that the distance of the over-boundary coating area 600 can be affected to different degrees.
The mask component 300 provided by the embodiment of the invention has certain difficulty in manufacturing the concave part 200 at the edge of the mask component 300, and the conventional mask component 300 adopts a wet etching process, because the wet etching is isotropic etching, the concave part 200 is difficult to be etched at the edge of the mask component 300.
Therefore, in the mask assembly 300 provided by the embodiment of the present invention, the first mask 310 and the second mask 320 are attached to each other along the thickness direction of the mask assembly 300;
the first reticle 310 has a first recess and the second reticle 320 has a second recess, the first recess and the second recess cooperating to form the recess 200.
A contact surface is formed between the first mask plate 310 and the second mask plate 320;
the orthographic projection of the surface of one side, close to the second mask plate 320, of the first mask plate 310 on the contact surface is coincident with the orthographic projection of the surface of one side, close to the first mask plate 310, of the second mask plate 320 on the contact surface;
the orthographic projection of the surface of the side of the second mask plate 320 far away from the first mask plate 310 on the contact surface is larger than and covers the orthographic projection of the surface of the side of the first mask plate 310 far away from the second mask plate 320 on the contact surface.
Specifically, as shown in fig. 3 to 5, the shapes and structures of the first recess of the first reticle 310 and the second recess of the second reticle 320 are designed according to different airflow schemes, so as to reduce the area of the over-boundary plating region 600.
In addition, the thickness of the first mask 310 is less than or equal to the thickness of the second mask 320; the thickness of the first mask 310 and the thickness of the second mask 320 are adjusted according to the magnitude of the airflow.
The mask assembly 300 is mainly made of the following materials: metal or alloy, and the thickness of the mask assembly 300 is 25 μm-5mm according to actual needs;
when the thicknesses of the first mask 310 and the second mask 320 in the mask blocking assembly 300 are relatively thin, the two masks cannot be separately etched, and then the two masks are bonded into one sheet as shown in fig. 3-5, the relatively thin first mask 310 and the relatively thin second mask 320 can be aligned and bonded together in the atmosphere, and can be firmly adsorbed together due to the cassimel effect in the vacuum environment of the film forming cavity.
When the thicknesses of the first mask 310 and the second mask in the mask assembly 300 are thicker, as shown in fig. 6, an electrostatic adsorption assembly 400 is disposed between the first mask 310 and the second mask 320, so that the first mask 310 is attached to the second mask 320.
When the two masks are thicker, the two masks cannot be firmly attached in the cavity, and the solution is to add a positive electrode 410 and a negative electrode 420 on the first mask 310, so that the positive electrode 410 and the negative electrode 420 form positive and negative potentials, thereby forming an additional electrostatic adsorption circuit board as shown in fig. 7, wherein the electrode material is a metal electrode wrapped by an insulating material, and the thickness of the electrode can be set as required. The positive and negative electrodes need to be welded to the first mask plate 310, and the second mask plate 320 and the electrostatic adsorption assembly 400 are firmly adsorbed together by electrostatic adsorption force brought by positive and negative potentials applied by the electrodes.
As shown in fig. 8, a flowchart illustrating steps of a method for manufacturing a reticle assembly 300 according to an embodiment of the present invention; in a second aspect, an embodiment of the present invention provides a method for manufacturing a reticle assembly 300, for preparing the reticle assembly 300 according to any one of the first aspect, including:
etching on the reticle assembly 300 to form the recess 200;
the reticle assembly 300 is surface treated.
Specifically, the mask assembly 300 includes: a first reticle 310 and a second reticle 320;
step 801: the first mask 310 is etched to form a first recess;
step 802: the second mask 320 is etched to form a second recess;
step 803: performing surface treatment on the first mask plate 310;
step 804: performing surface treatment on the second mask 320; surface treatment the first reticle 310 and the second reticle 320 are surface cleaned and treated with a surface material, which may optionally be an insulating material.
Specifically, if the thickness of reticle assembly 300 is thin, step 805: and aligning and attaching the first mask plate 310 and the second mask plate 320. The first mask 310 and the second mask 320 can be bonded together in an air atmosphere, and then the first mask 310 and the second mask 320 can be firmly adsorbed together due to the Casimir effect in a vacuum environment of the film forming cavity.
As shown in fig. 9, if the reticle assembly 300 is thick, at step 803: after the surface treatment of the first reticle 310, step 806 is performed: adding a positive electrode 410 and a negative electrode 420 to the first mask plate 310, wherein the positive electrode 410 and the negative electrode 420 need to be welded to the first mask plate 310 in a fitting manner; then, after the positive electrode 410 and the negative electrode 420 are bonded or welded to the first mask, step 807 is performed: processing the surface of the first mask; the processing material used here may be the same insulating material as used in step 803, or may be a metal material, and step 807 here may be performed before step 804, to make up for the gap between the electrode and the first reticle contact region that is not sufficiently filled in step 804, and also by omitting step 807: the first reticle 310 is surface treated, only by step 804: the first reticle 310 is surface treated and then processed by step 805: the first mask 310 and the second mask 320 are aligned and attached.
Specifically, the positive electrode 410 and the negative electrode 420 form positive and negative potentials, so as to form an additional electrostatic adsorption circuit board, the electrode material is a metal electrode wrapped by an insulating material, and the thickness of the electrode can be set as required. Finally, the first mask 310 and the second mask 320 are firmly adsorbed together by the electrostatic adsorption force brought by the positive and negative potentials applied by the electrodes.
It will be apparent to those skilled in the art that various changes and modifications may be made in the embodiments of the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.

Claims (9)

1. A mask plate component is characterized in that the mask plate component is provided with a hollow area;
a concave part is formed on the side wall of at least one part of the hollow area;
the first mask and the second mask are attached to each other in the thickness direction of the mask assembly;
the first mask plate is provided with a first concave part, the second mask plate is provided with a second concave part, and the first concave part is matched with the second concave part to form the concave part.
2. The reticle assembly of claim 1, wherein a contact surface is formed between the first reticle and the second reticle;
the orthographic projection of the surface of one side, close to the second mask, of the first mask on the contact surface is superposed with the orthographic projection of the surface of one side, close to the first mask, of the second mask on the contact surface;
the orthographic projection of the surface of one side, far away from the first mask plate, of the second mask plate on the contact surface is larger than and covers the orthographic projection of the surface of one side, far away from the second mask plate, of the first mask plate on the contact surface.
3. The reticle assembly of claim 2, wherein a thickness of the first reticle is less than or equal to a thickness of the second reticle.
4. The reticle assembly of claim 1, wherein the reticle assembly has a thickness of 25 μ ι η to 5 mm.
5. The mask assembly of any one of claims 1-4, wherein an electrostatic adsorption assembly is disposed between the first mask and the second mask to attach the first mask to the second mask.
6. A method of making a reticle assembly for use in the preparation of a reticle assembly according to any one of claims 1 to 5, comprising:
etching the mask plate assembly to form the concave part;
and carrying out surface treatment on the mask plate assembly.
7. The method of claim 6, wherein the reticle assembly comprises: a first mask and a second mask;
etching the first mask to form a first concave part; etching the second mask to form a second concave part;
and carrying out counterpoint adsorption on the first mask plate and the second mask plate so as to enable the first mask plate to be attached to the second mask plate.
8. The method according to claim 7, wherein the positioning and the adsorbing of the first mask and the second mask comprise:
and the first mask plate and the second mask plate are aligned and attached under the atmospheric environment.
9. The method of claim 7, wherein the first reticle and the second reticle are electrostatically attracted.
CN202010001378.9A 2020-01-02 2020-01-02 Mask assembly and manufacturing method thereof Active CN111139450B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010001378.9A CN111139450B (en) 2020-01-02 2020-01-02 Mask assembly and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010001378.9A CN111139450B (en) 2020-01-02 2020-01-02 Mask assembly and manufacturing method thereof

Publications (2)

Publication Number Publication Date
CN111139450A CN111139450A (en) 2020-05-12
CN111139450B true CN111139450B (en) 2021-11-09

Family

ID=70523275

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010001378.9A Active CN111139450B (en) 2020-01-02 2020-01-02 Mask assembly and manufacturing method thereof

Country Status (1)

Country Link
CN (1) CN111139450B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103132015A (en) * 2011-11-24 2013-06-05 三星显示有限公司 Mask for deposition and manufacturing method of the same
JP2015021179A (en) * 2013-07-22 2015-02-02 大日本印刷株式会社 Production method of metal mask, and metal mask
CN106521411A (en) * 2015-09-09 2017-03-22 三星显示有限公司 Deposition mask and method of fabricating the same
CN109794684A (en) * 2017-11-14 2019-05-24 三星显示有限公司 Method for manufacturing the equipment of mask and for manufacturing mask

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103132015A (en) * 2011-11-24 2013-06-05 三星显示有限公司 Mask for deposition and manufacturing method of the same
JP2015021179A (en) * 2013-07-22 2015-02-02 大日本印刷株式会社 Production method of metal mask, and metal mask
CN106521411A (en) * 2015-09-09 2017-03-22 三星显示有限公司 Deposition mask and method of fabricating the same
CN109794684A (en) * 2017-11-14 2019-05-24 三星显示有限公司 Method for manufacturing the equipment of mask and for manufacturing mask

Also Published As

Publication number Publication date
CN111139450A (en) 2020-05-12

Similar Documents

Publication Publication Date Title
TWI810479B (en) Method for manufacturing vapor deposition mask, laminate, method for manufacturing pattern, and method for manufacturing organic semiconductor element
WO2015041296A1 (en) Film-forming mask and touch panel substrate
US9666416B2 (en) Apparatus and method for depositing electronically conductive pasting material
CN210394497U (en) Mask and method for manufacturing the same
US20140038393A1 (en) Method and system for ion-assisted processing
KR20160082557A (en) Apparatus for deposition and substrate alignment method in the same
JP2019530211A (en) Electrostatic chuck and manufacturing method thereof
CN111139450B (en) Mask assembly and manufacturing method thereof
KR20140092447A (en) Coating method using graphene metal mixture
CN108779548B (en) Film forming apparatus and platen ring
CN109643682A (en) Electrostatic chuck and its manufacturing method
KR101832988B1 (en) Mother plate and producing method of the same, and producing method of the same
CN111549316A (en) Mask plate for evaporation
KR101775135B1 (en) eletectrostatic chuck
WO2016093139A1 (en) Metal mask, touch panel, and method for manufacturing touch panels
JPH0342035Y2 (en)
JP7423876B2 (en) Metal mask, ball array mask, base material and manufacturing method thereof
RU2285742C2 (en) Method of application of metallic coat on dielectric substrate and device for realization of this method
JP2016128597A (en) Magnet sheet, film deposition method using the same, and touch panel
KR102154479B1 (en) Electrostatic chuck
JPS58202526A (en) Manufacture of x-ray exposure mask
TW201209197A (en) Method of coating
JP7067915B2 (en) Method for manufacturing piezoelectric element laminate and piezoelectric element laminate
JP6900799B2 (en) Through Silicon Via, Through Silicon Via Manufacturing Method and Mechanical Sensor
JPS59161023A (en) Manufacture of element

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant