CN111130499A - Broadband film cavity acoustic resonator filter - Google Patents
Broadband film cavity acoustic resonator filter Download PDFInfo
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- CN111130499A CN111130499A CN202010010060.7A CN202010010060A CN111130499A CN 111130499 A CN111130499 A CN 111130499A CN 202010010060 A CN202010010060 A CN 202010010060A CN 111130499 A CN111130499 A CN 111130499A
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- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000010409 thin film Substances 0.000 claims description 19
- 238000004891 communication Methods 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 34
- 230000008878 coupling Effects 0.000 description 15
- 238000010168 coupling process Methods 0.000 description 15
- 238000005859 coupling reaction Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 11
- 238000004088 simulation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/48—Coupling means therefor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/547—Notch filters, e.g. notch BAW or thin film resonator filters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention is suitable for the field of semiconductor devices and provides a broadband film bulk acoustic resonator filter, wherein the broadband film bulk acoustic resonator filter comprises a substrate, a signal line arranged on the substrate, at least two series resonance units and at least one parallel resonance unit; the at least two series resonant cells are connected in series to the signal line, and the at least one parallel resonant cell is connected between the signal line and a ground terminal; the series resonance unit includes a series resonator formed on the substrate and an inductor connected in series with the series resonator, and the parallel resonance unit includes a parallel resonator formed on the substrate and an inductor connected in series with the parallel resonator. The broadband film cavity acoustic resonator filter provided by the invention has larger relative bandwidth and larger application range.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a broadband film bulk acoustic resonator filter, and a duplexer, a module and communication equipment using the filter.
Background
A Film Bulk Acoustic Resonator (FBAR) filter is a radio frequency filter chip that uses piezoelectric and inverse piezoelectric effects to realize filtering, and is widely applied due to its advantages of high Q value, ultra-small size, etc.
However, the relative bandwidth of the FBAR filter is limited by the electromechanical coupling coefficient of the piezoelectric material, and is difficult to be widened, and the relative bandwidth of the conventional FBAR filter can only be 1-4%, which greatly limits the application range of the FBAR filter.
Disclosure of Invention
In view of this, the present invention provides a broadband film bulk acoustic resonator filter, and a duplexer, a module and a communication device using the same, so as to increase the relative bandwidth of the film bulk acoustic resonator filter and expand the application range of the film bulk acoustic resonator filter.
A first aspect of an embodiment of the present invention provides a broadband thin film bulk acoustic resonator filter, including a substrate, a signal line disposed on the substrate, and at least two series resonant units and at least one parallel resonant unit;
the at least two series resonant cells are connected in series to the signal line, and the at least one parallel resonant cell is connected between the signal line and a ground terminal;
the series resonance unit includes a series resonator formed on the substrate and an inductor connected in series with the series resonator, and the parallel resonance unit includes a parallel resonator formed on the substrate and an inductor connected in series with the parallel resonator.
Based on the first aspect, in one implementation manner, the number of the parallel resonant units is equal to the number of the series resonant units minus one, and a connection point of each parallel resonant unit to the signal line is located between two adjacent series resonant units.
In one implementation, the series resonator and the parallel resonator each include a multilayer structure formed on the substrate, the multilayer structure including at least a lower electrode layer, a piezoelectric layer, and an upper electrode layer;
and a cavity is formed between the substrate and the multilayer structure, and comprises a lower half cavity below the upper surface of the substrate and an upper half cavity which exceeds the upper surface of the substrate and protrudes towards the multilayer structure.
In one implementation manner, the lower half cavity is enclosed by a bottom wall and a first side wall, the bottom wall is entirely parallel to the substrate surface, and the first side wall is a first smooth curved surface extending from an edge of the bottom wall to the upper surface of the substrate.
In one implementation, the inductance of the inductor is related to the required relative bandwidth of the wideband film bulk acoustic resonator filter, and the larger the required relative bandwidth of the wideband film bulk acoustic resonator filter, the larger the inductance of the inductor of the required configuration.
In one implementation, the inductor includes a discrete inductor, a planar inductor, or a solid inductor.
In one implementation, the number of the series resonant cells is 4.
A second aspect of the embodiments of the present invention provides a duplexer, including a transmitting filter and a receiving filter, where at least one of the transmitting filter and the receiving filter includes a broadband thin film bulk acoustic resonator filter as described in any of the implementations of the first aspect and the first aspect.
A third aspect of embodiments of the present invention provides a module, including the broadband thin film bulk acoustic resonator filter according to any one of the implementations of the first aspect and the first aspect, or including the duplexer according to the second aspect.
A fourth aspect of embodiments of the present invention provides a communication device, including the module according to the third aspect.
Compared with the prior art, the invention has the following beneficial effects:
the broadband film cavity acoustic resonant filter provided by the invention comprises a substrate, a signal line arranged on the substrate, at least two series resonant units and at least one parallel resonant unit; the at least two series resonant cells are connected in series to the signal line, and the at least one parallel resonant cell is connected between the signal line and a ground terminal; the series resonance unit includes a series resonator formed on the substrate and an inductor connected in series with the series resonator, and the parallel resonance unit includes a parallel resonator formed on the substrate and an inductor connected in series with the parallel resonator. Because the relative bandwidth of the broadband film bulk acoustic resonator filter is determined by the equivalent electromechanical coupling coefficient of the resonators forming the filter, the equivalent electromechanical coupling coefficient of the resonators is improved by connecting an inductor in series for each resonator to form a resonance unit (a series resonance unit and a parallel resonance unit), thereby increasing the relative bandwidth of the broadband film bulk acoustic resonator filter. Therefore, the broadband film cavity acoustic resonance filter can have more application scenes and a larger application range.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIG. 1 is a schematic diagram of a circuit structure of a broadband film bulk acoustic resonator filter according to an embodiment of the present invention;
FIG. 2 is a schematic diagram showing impedance characteristics of a series resonant unit of a broadband film bulk acoustic resonator filter according to an embodiment of the present invention;
FIG. 3 is a diagram illustrating simulation results of relative bandwidths of a broadband film bulk acoustic resonator filter provided in accordance with an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a piezoelectric resonator according to an embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the following description is made by way of specific embodiments with reference to the accompanying drawings.
The broadband film cavity acoustic resonator filter provided by the embodiment of the invention comprises a common substrate, and all the composition units are arranged on or formed on the common substrate, wherein the common substrate can be a semiconductor polycrystalline substrate, such as a silicon crystal.
Referring to fig. 1, it shows a schematic circuit structure diagram of a broadband film bulk acoustic resonator filter provided by an embodiment of the present invention, which is detailed as follows:
as shown in fig. 1, a broadband film bulk acoustic resonator filter 1 according to an embodiment of the present invention includes a signal line 10, where two ends of the signal line 10 are a signal input end a and a signal output end B, respectively, and the signal line 10 is disposed on the substrate.
The broadband film bulk acoustic resonator filter 1 provided by the embodiment of the present invention further includes at least two series resonant units (111, 112, 113, 114), and the at least two series resonant units (111, 112, 113, 114) are connected in series to the signal line 10.
The broadband film bulk acoustic resonator filter 1 provided by the embodiment of the invention further comprises at least one parallel resonance unit (121, 122, 123), wherein the at least one parallel resonance unit (121, 122, 123) is connected between the signal line 10 and the ground terminal, and when the number of the parallel resonance units is more than two, the parallel resonance units are connected in parallel.
In the broadband film bulk acoustic resonator filter 1 provided by the embodiment of the present invention, the series resonant unit is composed of a series resonator and an inductor which are connected in series, and the parallel resonant unit is composed of a parallel resonator and another inductor which are connected in series. As shown in fig. 1, the series resonance unit 111 includes a series resonator and an inductance L111 connected in series, and the parallel resonance unit 123 includes a parallel resonator and an inductance L123 connected in series.
The series resonator and the parallel resonator are both piezoelectric resonators. In the prior art, a filter is generally composed of only series resonators and parallel resonators, and the filter characteristic of the filter is completely determined by the series-parallel resonance frequency difference of the piezoelectric resonators, that is, the equivalent electromechanical coupling coefficient of the piezoelectric resonators. The electromechanical coupling coefficient of the piezoelectric resonator is related to the structural parameters of the piezoelectric resonator, and when the structural parameters of the piezoelectric resonator are exact, the electromechanical coupling coefficient of the piezoelectric resonator is completely determined by the electromechanical coupling coefficient of the piezoelectric material, so that the piezoelectric material with a small electromechanical coupling coefficient is difficult to realize the FBAR filter with a large bandwidth.
In the embodiment of the invention, a new resonance unit is formed by connecting an inductor in series with the piezoelectric resonator, so that the equivalent electromechanical coupling coefficient of the new resonance unit is increased relative to the equivalent electromechanical coupling coefficient of the piezoelectric resonator before the inductor is not connected in series. That is, the series resonator is connected with an inductor in series to form a series resonance unit, the parallel resonator is also connected with an inductor in series to form a parallel resonance unit, and the series resonance unit and the parallel resonance unit form the film cavity acoustic resonance filter, so that the formed film cavity acoustic resonance filter has larger relative bandwidth.
Fig. 2 is a schematic diagram of impedance characteristic curves of series resonant units of a broadband film bulk acoustic resonator filter according to an embodiment of the present invention. As shown in fig. 2, four curves respectively represent impedance characteristic curves when the piezoelectric resonator is connected in series with inductances of different inductances, where dB (Z (1,1)) represents an impedance characteristic curve corresponding to a piezoelectric resonator when the inductance of the piezoelectric resonator in series is 0, that is, an impedance characteristic curve corresponding to a piezoelectric resonator when the piezoelectric resonator is not connected in series with the inductance; dB (Z (2,2)) represents an impedance characteristic curve corresponding to an inductance of 0.2nH in the series connection of the piezoelectric resonators; dB (Z (3,3)) represents an impedance characteristic curve corresponding to an inductance of 0.4nH in the series connection of the piezoelectric resonators; dB (Z (4,5)) represents an impedance characteristic curve corresponding to the inductance of the series piezoelectric resonator of 0.6 nH.
In the impedance curve of the piezoelectric resonator, the bottom point below indicates the series resonance frequency f of the piezoelectric resonatorsAnd the top point represents the parallel resonance frequency f of the piezoelectric resonatorpThe equivalent electromechanical coupling coefficient of the piezoelectric resonator can be represented by the formula
And (6) calculating.
As can be seen from fig. 2, the series resonator has a series resonance frequency f after an inductor is connected in series (series resonance unit)sThe equivalent electromechanical coupling coefficient is increased; based on the same principle, after an inductor is connected in series (parallel resonance unit) for the parallel resonator, the parallel resonance frequency f of the parallel resonator ispIncreasing the equivalent electromechanical coupling coefficient. Therefore, the film cavity acoustic resonance filter formed based on the series resonance unit and the parallel resonance unit can have a larger relative bandwidth.
In the embodiment of the present invention, the number of the parallel resonant units may be reduced by one from the number of the series resonant units, and a connection point of each parallel resonant unit and the signal line is located between two adjacent series resonant units, that is, each series resonant unit and each parallel resonant unit may form a ladder structure.
Optionally, in this embodiment of the present invention, the inductance of the inductor is related to a required relative bandwidth of the broadband thin film bulk acoustic resonator filter, and the larger the required relative bandwidth of the broadband thin film bulk acoustic resonator filter is, the larger the inductance of the inductor that needs to be configured is.
Fig. 3 is a schematic diagram of simulation results of the relative bandwidth of the broadband film bulk acoustic resonator filter provided by the embodiment of the present invention, as shown in fig. 3, wherein a thinner curve is a simulation diagram of the relative bandwidth of the FBAR filter when inductance is not increased (L ═ 0), in this case, the relative bandwidth of the FBAR filter is about 2.3%; the thicker curve in the figure is a simulation diagram of the relative bandwidth of the FBAR filter when the inductance of the series inductor is 0.6nH, and it can be seen that the relative bandwidth of the FBAR filter is increased from the original 2.3% to about 5.5%.
The broadband film bulk acoustic resonator filter corresponding to the simulation diagram comprises four series resonance units and 3 parallel resonance units, each series resonance unit is formed by connecting a series resonator in series with an inductor of 0.6nH, and each parallel resonance unit is formed by connecting a parallel resonator in series with an inductor of 0.6 nH. It can be seen that the broadband film bulk acoustic resonator filter provided by the embodiment of the present invention can have a larger relative bandwidth compared to the design of the prior art that only includes the series resonators and the parallel resonators.
Optionally, in the embodiment of the present invention, the inductance added to the piezoelectric resonator may be a discrete inductance or a planar inductance, or may also be a three-dimensional inductance, and by adjusting an inductance of the inductance, the adjustment of the relative bandwidth of the film bulk acoustic resonator filter may also be implemented, so that the present invention has certain application flexibility.
In an embodiment of the present invention, the series resonator and the parallel resonator are both piezoelectric resonators, and each of the series resonator and the parallel resonator includes a substrate and a multilayer structure formed on the substrate, and a cavity is formed between the substrate and the multilayer structure.
Fig. 4 shows a schematic structural diagram of a piezoelectric resonator provided by an embodiment of the present invention, and both the series resonator and the parallel resonator described above may include the structure shown in the piezoelectric resonator, as shown in fig. 3, the multilayer structure S11 is at least composed of a lower electrode layer S113, a piezoelectric layer S112, and an upper electrode layer S111; in addition, both the series resonator and the parallel resonator described above may be directly fabricated on the above-described common substrate (i.e., the substrate 13 shown in fig. 4) at the time of fabrication, a cavity S10 may be formed between the substrate 13 and the multilayer structure S11, and the cavity S10 may include a lower half cavity located below the upper surface of the substrate 13 and an upper half cavity protruding beyond the upper surface of the substrate 13 toward the multilayer structure S11.
Further, in the embodiment of the present invention, the lower half cavity may be surrounded by a bottom wall and a first side wall, the bottom wall is entirely parallel to the surface of the substrate 13, and the first side wall is a first smooth curved surface extending from an edge of the bottom wall to the upper surface of the substrate, so as to form a resonator structure, and have a better performance.
From the above, the broadband thin film cavity acoustic resonator filter provided by the invention comprises a substrate, a signal line arranged on the substrate, at least two series resonant units and at least one parallel resonant unit; the at least two series resonant cells are connected in series to the signal line, and the at least one parallel resonant cell is connected between the signal line and a ground terminal; the series resonance unit includes a series resonator formed on the substrate and an inductor connected in series with the series resonator, and the parallel resonance unit includes a parallel resonator formed on the substrate and an inductor connected in series with the parallel resonator. Because the relative bandwidth of the broadband film bulk acoustic resonator filter is determined by the equivalent electromechanical coupling coefficient of the resonators forming the filter, the equivalent electromechanical coupling coefficient of the resonators is improved by connecting an inductor in series for each resonator to form a resonance unit (a series resonance unit and a parallel resonance unit), thereby increasing the relative bandwidth of the broadband film bulk acoustic resonator filter. Therefore, the broadband film cavity acoustic resonance filter can have more application scenes and a larger application range.
Embodiments of the present invention further provide a duplexer, which may include a transmitting filter and a receiving filter, and at least one of the transmitting filter and the receiving filter may include the broadband thin film bulk acoustic resonator filter as described in any of the embodiments above.
Embodiments of the present invention also provide a module, which may include a broadband thin film bulk acoustic resonator filter as described in any of the above embodiments, or may include a duplexer as described in an embodiment above.
The embodiment of the invention also provides a communication device, which can comprise the module in the above embodiment.
As can be seen from the above, the broadband film bulk acoustic resonator filter provided by the embodiment of the present invention can be applied to some application scenarios with a relatively large bandwidth requirement, and can be applied to the duplexer, the module and the communication device, and can adjust the relative bandwidth of the film bulk acoustic resonator filter by changing the inductance of the inductor, so that the filter has good application flexibility.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (10)
1. A broadband thin film bulk acoustic resonator filter, comprising a substrate, a signal line disposed on the substrate, and at least two series resonant cells and at least one parallel resonant cell;
the at least two series resonant cells are connected in series to the signal line, and the at least one parallel resonant cell is connected between the signal line and a ground terminal;
the series resonance unit includes a series resonator formed on the substrate and an inductor connected in series with the series resonator, and the parallel resonance unit includes a parallel resonator formed on the substrate and an inductor connected in series with the parallel resonator.
2. The broadband thin film bulk acoustic resonator filter according to claim 1, wherein the number of the parallel resonant units is reduced by one from the number of the series resonant units, and a connection point of each parallel resonant unit to the signal line is located between two adjacent series resonant units.
3. A broadband thin film bulk acoustic resonator filter according to claim 2, wherein the series resonator and the parallel resonator each comprise a multilayer structure formed on the substrate, the multilayer structure comprising at least a lower electrode layer, a piezoelectric layer and an upper electrode layer;
and a cavity is formed between the substrate and the multilayer structure, and comprises a lower half cavity below the upper surface of the substrate and an upper half cavity which exceeds the upper surface of the substrate and protrudes towards the multilayer structure.
4. The broadband thin film bulk acoustic resonator filter according to claim 3, wherein the lower half cavity is enclosed by a bottom wall and a first side wall, the bottom wall is entirely parallel to the substrate surface, and the first side wall is a first rounded curved surface extending from an edge of the bottom wall to the upper surface of the substrate.
5. The broadband thin film bulk acoustic resonator filter according to any one of claims 1 to 4, wherein the inductance of the inductor is related to the required relative bandwidth of the broadband thin film bulk acoustic resonator filter, and the larger the required relative bandwidth of the broadband thin film bulk acoustic resonator filter, the larger the inductance of the inductor required to be configured.
6. A broadband thin film bulk acoustic resonator filter according to claim 5, wherein the inductor comprises a discrete inductor, a planar inductor or a solid inductor.
7. The broadband thin film bulk acoustic resonator filter according to any one of claims 1 to 4, wherein the number of the series resonant units is 4.
8. A duplexer comprising a transmit filter and a receive filter, at least one of the transmit filter and the receive filter comprising a broadband thin film bulk acoustic resonator filter according to any one of claims 1 to 7.
9. A module comprising a broadband thin film bulk acoustic resonator filter according to any one of claims 1 to 7, or comprising a duplexer according to claim 8.
10. A communication device, characterized in that the communication device comprises a module according to claim 9.
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| CN202010010060.7A CN111130499B (en) | 2020-01-06 | 2020-01-06 | Broadband film cavity acoustic resonant filter |
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| CN202010010060.7A CN111130499B (en) | 2020-01-06 | 2020-01-06 | Broadband film cavity acoustic resonant filter |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1751436A (en) * | 2003-12-01 | 2006-03-22 | 株式会社村田制作所 | Filter device |
| JP2008205720A (en) * | 2007-02-19 | 2008-09-04 | Toshiba Corp | Resonator filter and duplexer |
| WO2017219251A1 (en) * | 2016-06-21 | 2017-12-28 | 诺思（天津）微系统有限公司 | Trapezoidal broadband piezoelectric filter |
| CN109787581A (en) * | 2018-11-28 | 2019-05-21 | 天津大学 | The filter based on bulk acoustic wave resonator with band logical and high pass dual function |
| CN110071702A (en) * | 2019-02-19 | 2019-07-30 | 天津大学 | A kind of bandpass filter and duplexer |
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2020
- 2020-01-06 CN CN202010010060.7A patent/CN111130499B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1751436A (en) * | 2003-12-01 | 2006-03-22 | 株式会社村田制作所 | Filter device |
| JP2008205720A (en) * | 2007-02-19 | 2008-09-04 | Toshiba Corp | Resonator filter and duplexer |
| WO2017219251A1 (en) * | 2016-06-21 | 2017-12-28 | 诺思（天津）微系统有限公司 | Trapezoidal broadband piezoelectric filter |
| CN109787581A (en) * | 2018-11-28 | 2019-05-21 | 天津大学 | The filter based on bulk acoustic wave resonator with band logical and high pass dual function |
| CN110071702A (en) * | 2019-02-19 | 2019-07-30 | 天津大学 | A kind of bandpass filter and duplexer |
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