CN111130499B - Broadband film cavity acoustic resonant filter - Google Patents
Broadband film cavity acoustic resonant filter Download PDFInfo
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- CN111130499B CN111130499B CN202010010060.7A CN202010010060A CN111130499B CN 111130499 B CN111130499 B CN 111130499B CN 202010010060 A CN202010010060 A CN 202010010060A CN 111130499 B CN111130499 B CN 111130499B
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- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000010409 thin film Substances 0.000 claims description 19
- 238000004891 communication Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 31
- 230000008878 coupling Effects 0.000 description 15
- 238000010168 coupling process Methods 0.000 description 15
- 238000005859 coupling reaction Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 9
- 238000004088 simulation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 238000001914 filtration Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/48—Coupling means therefor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/547—Notch filters, e.g. notch BAW or thin film resonator filters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention is applicable to the field of semiconductor devices, and provides a broadband film cavity acoustic resonant filter, wherein the broadband film cavity acoustic resonant filter comprises a substrate, a signal wire arranged on the substrate, at least two series resonant units and at least one parallel resonant unit; the at least two series resonant cells are connected in series to the signal line, the at least one parallel resonant cell being connected between the signal line and a ground terminal; the series resonant unit includes a series resonator formed on the substrate and an inductance connected in series with the series resonator, and the parallel resonant unit includes a parallel resonator formed on the substrate and an inductance connected in series with the parallel resonator. The broadband film cavity acoustic resonator filter provided by the invention has larger relative bandwidth and larger application range.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a broadband film cavity acoustic resonant filter, and a duplexer, a module and communication equipment applying the filter.
Background
The film cavity acoustic resonance (Film Bulk Acoustic Resonator, abbreviated as FBAR) filter is a radio frequency filter chip for realizing filtering by utilizing piezoelectric and inverse piezoelectric effects, and is widely applied due to the advantages of high Q value, ultra-small volume and the like.
However, the relative bandwidth of the FBAR filter is limited by the electromechanical coupling coefficient of the piezoelectric material, so that the relative bandwidth of the conventional FBAR filter can be only 1-4%, which greatly limits the application range of the FBAR filter.
Disclosure of Invention
In view of the above, the present invention provides a wideband film cavity acoustic resonator filter, and a duplexer, a module and a communication device using the same, so as to increase the relative bandwidth of the film cavity acoustic resonator filter and expand the application range of the film cavity acoustic resonator filter.
A first aspect of an embodiment of the present invention provides a wideband thin film cavity acoustic resonator filter, including a substrate, a signal line disposed on the substrate, and at least two series resonant units and at least one parallel resonant unit;
the at least two series resonant cells are connected in series to the signal line, the at least one parallel resonant cell being connected between the signal line and a ground terminal;
the series resonant unit includes a series resonator formed on the substrate and an inductance connected in series with the series resonator, and the parallel resonant unit includes a parallel resonator formed on the substrate and an inductance connected in series with the parallel resonator.
Based on the first aspect, in one implementation manner, the number of the parallel resonant units is the number of the series resonant units minus one, and a connection point of each parallel resonant unit and the signal line is located between two adjacent series resonant units.
In one implementation, the series resonator and the parallel resonator each include a multilayer structure formed on the substrate, the multilayer structure including at least a lower electrode layer, a piezoelectric layer, and an upper electrode layer;
wherein a cavity is formed between the substrate and the multilayer structure, the cavity including a lower cavity half below the upper surface of the substrate and an upper cavity half above the upper surface of the substrate and protruding toward the multilayer structure.
In one implementation, the lower cavity is surrounded by a bottom wall and a first side wall, the bottom wall is entirely parallel to the surface of the substrate, and the first side wall is a first smooth curved surface extending from the edge of the bottom wall to the upper surface of the substrate.
In one implementation, the inductance of the inductor is related to the required relative bandwidth of the wideband thin film cavity acoustic resonator filter, the greater the inductance of the required configuration.
In one implementation, the inductance comprises a discrete inductance, a planar inductance, or a stereo inductance.
In one implementation, the number of series resonant cells is 4.
A second aspect of the embodiments of the present invention provides a duplexer, including a transmit filter and a receive filter, at least one of which includes the wideband thin film cavity acoustic resonator filter as set forth in any one of the implementations of the first aspect and the first aspect.
A third aspect of embodiments of the present invention provides a module comprising a wideband thin film cavity acoustic resonator filter as described in any of the first aspect and the implementation manner of the first aspect, or the module comprises a diplexer as described in the second aspect.
A fourth aspect of an embodiment of the invention provides a communication device comprising a module as described in the third aspect above.
Compared with the prior art, the invention has the beneficial effects that:
the broadband film cavity acoustic resonator filter provided by the invention comprises a substrate, a signal wire arranged on the substrate, at least two series resonance units and at least one parallel resonance unit; the at least two series resonant cells are connected in series to the signal line, the at least one parallel resonant cell being connected between the signal line and a ground terminal; the series resonant unit includes a series resonator formed on the substrate and an inductance connected in series with the series resonator, and the parallel resonant unit includes a parallel resonator formed on the substrate and an inductance connected in series with the parallel resonator. The relative bandwidth of the broadband film cavity acoustic resonator filter is determined by the equivalent electromechanical coupling coefficient of the resonators forming the filter, and the equivalent electromechanical coupling coefficient of the resonators is improved by connecting an inductor in series to form a resonant unit (series resonant unit, parallel resonant unit) for each resonator, so that the relative bandwidth of the broadband film cavity acoustic resonator filter is increased. And further, the broadband film cavity acoustic resonator filter can have more application scenes and a larger application range.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic circuit diagram of a wideband film cavity acoustic resonator filter according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of impedance characteristics of a series resonant unit of a wideband film cavity acoustic resonator filter according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of the results of a simulation of the relative bandwidths of a wideband film cavity acoustic resonator filter provided by an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a piezoelectric resonator according to an embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth such as the particular system architecture, techniques, etc., in order to provide a thorough understanding of the embodiments of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the following description will be made by way of specific embodiments with reference to the accompanying drawings.
The wideband film cavity acoustic resonator filter provided by the embodiment of the invention comprises a common substrate, wherein each component unit is arranged or formed on the common substrate, and the common substrate can be a semiconductor polycrystalline substrate, such as silicon crystal.
Referring to fig. 1, a schematic circuit structure of a wideband thin film cavity acoustic resonator filter according to an embodiment of the present invention is shown, and details thereof are as follows:
as shown in fig. 1, the wideband film cavity acoustic resonator filter 1 provided in the embodiment of the present invention includes a signal line 10, two ends of the signal line 10 are a signal input end a and a signal output end B, respectively, and the signal line 10 is disposed on the above substrate.
The wideband film cavity acoustic resonator filter 1 provided by the embodiment of the present invention further includes at least two series resonant units (111, 112, 113, 114), and the at least two series resonant units (111, 112, 113, 114) are connected to the signal line 10 in series.
The wideband film cavity acoustic resonator filter 1 provided by the embodiment of the invention further comprises at least one parallel resonance unit (121, 122, 123), wherein the at least one parallel resonance unit (121, 122, 123) is connected between the signal line 10 and the ground terminal, and when the number of the parallel resonance units is greater than two, the parallel resonance units are connected in parallel.
In the wideband film cavity acoustic resonator filter 1 provided by the embodiment of the invention, the series resonance unit is composed of one series resonator and one inductor which are connected in series, and the parallel resonance unit is composed of one parallel resonator and the other inductor which are connected in series. As shown in fig. 1, the series resonant unit 111 includes a series resonator and an inductance L111 connected in series, and the parallel resonant unit 123 includes a parallel resonator and an inductance L123 connected in series.
The series resonator and the parallel resonator are piezoelectric resonators. In the prior art, a filter is generally composed of a series resonator and a parallel resonator, and the filtering characteristic of the filter is completely determined by the series-parallel resonant frequency difference of the piezoelectric resonator, that is, the equivalent electromechanical coupling coefficient of the piezoelectric resonator. The electromechanical coupling coefficient of the piezoelectric resonator is related to the structural parameters of the piezoelectric resonator, and when the structural parameters of the piezoelectric resonator are positive, the electromechanical coupling coefficient of the piezoelectric resonator is completely determined by the electromechanical coupling coefficient of the piezoelectric material, so that the piezoelectric material with a small electromechanical coupling coefficient is difficult to realize an FBAR filter with a large bandwidth.
In the embodiment of the invention, the new resonant unit is formed by connecting an inductor in series with the piezoelectric resonator, so that the equivalent electromechanical coupling coefficient of the new resonant unit is increased relative to that of the piezoelectric resonator before the inductor is not connected in series. That is, an inductance is connected in series to form a series resonance unit, an inductance is connected in series to form a parallel resonance unit, and then the series resonance unit and the parallel resonance unit form a film cavity acoustic resonance filter, so that the formed film cavity acoustic resonance filter has a larger relative bandwidth.
Fig. 2 is a schematic diagram of impedance characteristics of a series resonant unit of a wideband thin film cavity acoustic resonator filter according to an embodiment of the present invention. As shown in fig. 2, four curves respectively represent impedance characteristic curves when the piezoelectric resonators are connected in series with inductances of different inductances, wherein dB (Z (1, 1)) represents an impedance characteristic curve corresponding to the piezoelectric resonator when the inductance of the piezoelectric resonator connected in series is 0, that is, an impedance characteristic curve corresponding to the piezoelectric resonator when the piezoelectric resonator is not connected in series with the inductance; dB (Z (2, 2)) represents an impedance characteristic curve corresponding to the inductance of the piezoelectric resonator series connection of 0.2 nH; dB (Z (3, 3)) represents an impedance characteristic curve corresponding to the inductance of the piezoelectric resonator series connection of 0.4 nH; dB (Z (4, 5)) represents an impedance characteristic curve corresponding to the inductance of the piezoelectric resonator series connection of 0.6 nH.
In the impedance curve of the piezoelectric resonator, the bottom point below represents the series resonance frequency point f of the piezoelectric resonator s The upper top point represents the parallel resonant frequency of the piezoelectric resonatorPoint f p The equivalent electromechanical coupling coefficient of the piezoelectric resonator can be represented by the formula
And (5) calculating to obtain the product.
As can be seen from fig. 2, the series resonator has a series resonance frequency point f after a series inductor (series resonance unit) s The equivalent electromechanical coupling coefficient is reduced and the equivalent electromechanical coupling coefficient is increased; based on the same principle, for a parallel resonator, after one inductance is connected in series (parallel resonance unit), its parallel resonance frequency point f p The equivalent electromechanical coupling coefficient increases. Thus, the film cavity acoustic resonator filter based on the series resonance unit and the parallel resonance unit can have a larger relative bandwidth.
In the embodiment of the present invention, the number of parallel resonant units may be the number of the series resonant units minus one, and the connection point of each parallel resonant unit and the signal line is located between two adjacent series resonant units, that is, each series resonant unit and each parallel resonant unit may form a ladder structure.
Optionally, in an embodiment of the present invention, the inductance of the inductor is related to the required relative bandwidth of the wideband thin film cavity acoustic resonator filter, and the larger the required relative bandwidth of the wideband thin film cavity acoustic resonator filter, the larger the inductance of the inductor is required to be configured.
Fig. 3 is a schematic diagram of a simulation result of a relative bandwidth of a wideband thin film cavity acoustic resonator filter according to an embodiment of the present invention, as shown in fig. 3, in which a thinner curve is a simulation diagram of the relative bandwidth of the FBAR filter without increasing the inductance (l=0), and in this case, the relative bandwidth of the FBAR filter is about 2.3%; the thicker curve in the figure is a simulation of the relative bandwidth of the FBAR filter at an inductance of 0.6nH for the series inductance, and it can be seen that the relative bandwidth of the FBAR filter increases from about 2.3% to about 5.5%.
The broadband film cavity acoustic resonator filter corresponding to the simulation diagram comprises four series resonant units and 3 parallel resonant units, wherein each series resonant unit is formed by connecting one series resonator in series with one inductance of 0.6nH, and each parallel resonant unit is formed by connecting one parallel resonator in series with one inductance of 0.6 nH. It can be seen that the wideband film cavity acoustic resonator filter provided in the embodiment of the present invention can have a larger relative bandwidth compared with the design including only the series resonator and the parallel resonator in the prior art.
Optionally, in the embodiment of the present invention, the inductance added to the piezoelectric resonator may be a discrete inductance or a planar inductance, or may be a three-dimensional inductance, and by adjusting the inductance of the inductance, the adjustment of the relative bandwidth of the thin film cavity acoustic resonator filter may be further achieved, which has a certain application flexibility.
In one embodiment of the present invention, the series resonator and the parallel resonator are both piezoelectric resonators, and include a substrate and a multilayer structure formed on the substrate, and a cavity is formed between the substrate and the multilayer structure.
Fig. 4 is a schematic structural diagram of a piezoelectric resonator according to an embodiment of the present invention, where each of the above-mentioned series resonator and parallel resonator may include a structure shown by the piezoelectric resonator, and as shown in fig. 3, the multilayer structure S11 is at least formed by a lower electrode layer S113, a piezoelectric layer S112, and an upper electrode layer S111; in addition, both the series resonator and the parallel resonator may be directly prepared on the common substrate (i.e., the substrate 13 shown in fig. 4) at the time of preparation, and a cavity S10 may be formed between the substrate 13 and the multilayer structure S11, and the cavity S10 may include a lower half cavity located below the upper surface of the substrate 13 and an upper half cavity protruding beyond the upper surface of the substrate 13 and toward the multilayer structure S11.
Further, in the embodiment of the present invention, the lower half cavity may be surrounded by a bottom wall and a first side wall, where the whole bottom wall is parallel to the surface of the substrate 13, and the first side wall is a first rounded curved surface extending from the edge of the bottom wall to the upper surface of the substrate, so that the resonator structure is formed and has better performance.
As can be seen from the above, the wideband film cavity acoustic resonator filter provided by the present invention includes a substrate, a signal line disposed on the substrate, and at least two series resonant units and at least one parallel resonant unit; the at least two series resonant cells are connected in series to the signal line, the at least one parallel resonant cell being connected between the signal line and a ground terminal; the series resonant unit includes a series resonator formed on the substrate and an inductance connected in series with the series resonator, and the parallel resonant unit includes a parallel resonator formed on the substrate and an inductance connected in series with the parallel resonator. The relative bandwidth of the broadband film cavity acoustic resonator filter is determined by the equivalent electromechanical coupling coefficient of the resonators forming the filter, and the equivalent electromechanical coupling coefficient of the resonators is improved by connecting an inductor in series to form a resonant unit (series resonant unit, parallel resonant unit) for each resonator, so that the relative bandwidth of the broadband film cavity acoustic resonator filter is increased. And further, the broadband film cavity acoustic resonator filter can have more application scenes and a larger application range.
The embodiment of the invention also provides a duplexer, which can comprise a transmitting filter and a receiving filter, wherein at least one of the transmitting filter and the receiving filter can comprise the broadband film cavity acoustic resonant filter in any embodiment.
Embodiments of the present invention also provide a module that may include a wideband thin film cavity acoustic resonator filter as described in any of the embodiments above, or that may include a diplexer as described in any of the embodiments above.
The embodiment of the invention also provides a communication device, which can comprise the module in the previous embodiment.
As can be seen from the above, the wideband film cavity acoustic resonator filter provided by the embodiment of the present invention can be applied to some application scenarios with a relatively large bandwidth requirement, and applied to such as the above-mentioned diplexer, module and communication device, and can adjust the relative bandwidth of the film cavity acoustic resonator filter by changing inductance.
The above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention, and are intended to be included in the scope of the present invention.
Claims (7)
1. A broadband thin film cavity acoustic resonator filter, characterized in that the broadband thin film cavity acoustic resonator filter comprises a substrate, a signal line arranged on the substrate, at least two series resonant units and at least one parallel resonant unit;
the at least two series resonant cells are connected in series to the signal line, the at least one parallel resonant cell being connected between the signal line and a ground terminal;
the series resonant unit includes a series resonator formed on the substrate and an inductance connected in series with the series resonator, and the parallel resonant unit includes a parallel resonator formed on the substrate and an inductance connected in series with the parallel resonator;
wherein the series resonator and the parallel resonator each comprise a multilayer structure formed on the substrate, the multilayer structure comprising at least a lower electrode layer, a piezoelectric layer and an upper electrode layer;
wherein a cavity is formed between the substrate and the multilayer structure, the cavity comprising a lower half cavity below the upper surface of the substrate and an upper half cavity protruding beyond the upper surface of the substrate and toward the multilayer structure; the lower half cavity is surrounded by a bottom wall and a first side wall, the whole bottom wall is parallel to the surface of the substrate, and the first side wall is a first smooth curved surface extending from the edge of the bottom wall to the upper surface of the substrate;
the inductance of the inductor is related to the required relative bandwidth of the wideband thin film cavity acoustic resonator filter, the greater the inductance of the required configuration.
2. The wideband thin-film cavity acoustic resonator filter of claim 1, wherein the number of parallel resonant cells is the number of series resonant cells minus one, and a connection point of each parallel resonant cell to the signal line is located between two adjacent series resonant cells.
3. The wideband thin-film cavity acoustic resonator filter of claim 1, wherein the inductance comprises a discrete inductance, a planar inductance, or a stereo inductance.
4. The broadband thin film cavity acoustic resonator filter according to any of claims 1 to 2, wherein the number of series resonant cells is 4.
5. A diplexer comprising a transmit filter and a receive filter, at least one of the transmit filter and the receive filter comprising the wideband thin film bulk acoustic resonator filter of any one of claims 1 to 4.
6. A module comprising a wideband thin film cavity acoustic resonator filter as claimed in any one of claims 1 to 4, or a diplexer as claimed in claim 5.
7. A communication device comprising the module of claim 6.
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| CN202010010060.7A CN111130499B (en) | 2020-01-06 | 2020-01-06 | Broadband film cavity acoustic resonant filter |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1751436A (en) * | 2003-12-01 | 2006-03-22 | 株式会社村田制作所 | Filter device |
| JP2008205720A (en) * | 2007-02-19 | 2008-09-04 | Toshiba Corp | Resonator filter and duplexer |
| WO2017219251A1 (en) * | 2016-06-21 | 2017-12-28 | 诺思（天津）微系统有限公司 | Trapezoidal broadband piezoelectric filter |
| CN109787581A (en) * | 2018-11-28 | 2019-05-21 | 天津大学 | The filter based on bulk acoustic wave resonator with band logical and high pass dual function |
| CN110071702A (en) * | 2019-02-19 | 2019-07-30 | 天津大学 | A kind of bandpass filter and duplexer |
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2020
- 2020-01-06 CN CN202010010060.7A patent/CN111130499B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1751436A (en) * | 2003-12-01 | 2006-03-22 | 株式会社村田制作所 | Filter device |
| JP2008205720A (en) * | 2007-02-19 | 2008-09-04 | Toshiba Corp | Resonator filter and duplexer |
| WO2017219251A1 (en) * | 2016-06-21 | 2017-12-28 | 诺思（天津）微系统有限公司 | Trapezoidal broadband piezoelectric filter |
| CN109787581A (en) * | 2018-11-28 | 2019-05-21 | 天津大学 | The filter based on bulk acoustic wave resonator with band logical and high pass dual function |
| CN110071702A (en) * | 2019-02-19 | 2019-07-30 | 天津大学 | A kind of bandpass filter and duplexer |
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