CN111128981B - IGBT module packaging structure and packaging method - Google Patents

IGBT module packaging structure and packaging method Download PDF

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Publication number
CN111128981B
CN111128981B CN202010010609.2A CN202010010609A CN111128981B CN 111128981 B CN111128981 B CN 111128981B CN 202010010609 A CN202010010609 A CN 202010010609A CN 111128981 B CN111128981 B CN 111128981B
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igbt
chip
igbt chip
igbt module
packaging
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CN111128981A (en
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马浩华
曹俊
敖利波
史波
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Gree Electric Appliances Inc of Zhuhai
Zhuhai Zero Boundary Integrated Circuit Co Ltd
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Gree Electric Appliances Inc of Zhuhai
Zhuhai Zero Boundary Integrated Circuit Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The invention provides an IGBT module packaging structure and a packaging method, wherein the IGBT module packaging structure is characterized by comprising the following components: a substrate (3) on which an IGBT chip (7) can be carried; a case (11) which covers the substrate (3) and in which a cavity for accommodating the IGBT chip (7) is formed inside the case (11), and the IGBT chip (7) is disposed in the cavity; and a plastic package material (9) is filled in the cavity, and at least one partition plate (12) extending downwards is arranged on the lower end face of the top cover (101) of the shell (11) to separate the plastic package material (9). According to the invention, the interior of the top cover of the module is designed into the fence type partition structure, the plastic package material is partitioned into a plurality of narrow spaces by the internal fence, the plastic package material has small vibration space and small swing amplitude, the pulling force on the bonding wire is reduced, the failure rate is reduced, and the reliability is greatly improved.

Description

IGBT module packaging structure and packaging method
Technical Field
The invention belongs to the technical field of integrated circuits, and particularly relates to an IGBT module packaging structure and an IGBT module packaging method.
Background
The IGBT module can generate strong vibration in the transportation process, particularly, the IGBT module is applied to a plurality of modules on an automobile, the application environment is severe, frequent sudden braking and acceleration are performed, and great impact is caused on the structure of a device, so that the requirement on the reliability of the module is particularly high; however, since the plastic package materials such as silica gel and epoxy resin are soft and have certain viscosity, the plastic package materials can vibrate along with the plastic package materials when the plastic package materials vibrate strongly, and meanwhile, bonding wires in the plastic package materials can be pulled, so that the bonding wires and the chip are damaged or even broken, the electrical connection is interrupted, and the IGBT fails. Especially, the module with larger volume has large internal space and large vibration amplitude of the plastic packaging material.
The IGBT module in the prior art can vibrate strongly in the transportation process, the plastic package material can vibrate along with the IGBT module in the prior art, and meanwhile, a bonding wire in the plastic package material can be pulled, so that the bonding wire and a chip are damaged or even broken, the electrical connection is interrupted, the IGBT fails and other technical problems are solved, and therefore the IGBT module packaging structure and the IGBT module packaging method are researched and designed.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to overcome the defects that the bonding wire and the chip are damaged or even broken due to strong vibration of the IGBT module in the transportation process, and the IGBT fails due to interruption of electrical connection, so that the invention provides a structure and a method for packaging the IGBT module.
The invention provides an IGBT module packaging structure, which comprises:
the substrate can bear an IGBT chip thereon;
the shell is covered on the substrate, a cavity for accommodating the IGBT chip is formed in the shell, and the IGBT chip is arranged in the cavity;
and the cavity is filled with a plastic package material, and the lower end face of the top cover of the shell is provided with at least one partition plate extending downwards to separate the plastic package material.
Preferably, the first and second electrodes are formed of a metal,
the partition plates include a plurality of first partition plates extending in a first direction, the first partition plates being arranged to be spaced apart from each other; and/or the partition plates comprise a plurality of second partition plates extending along the second direction, and the second partition plates are arranged at intervals; when both a first direction and a second direction are included, the first direction and the second direction intersect.
Preferably, the first and second electrodes are formed of a metal,
the first direction and the second direction are perpendicular, so that the plurality of first partitions and the plurality of second partitions intersect perpendicularly to form a rectangular cell structure.
Preferably, the first and second electrodes are formed of a metal,
the first partition plates are uniformly distributed, and the distance between every two adjacent first partition plates is equal; and/or the second partition plates in the plurality of second partition plates are spaced at equal distances from two adjacent second partition plates to form uniform distribution.
Preferably, the first and second electrodes are formed of a metal,
the distance between two adjacent first partition boards is equal to the distance between two adjacent second partition boards, so that the cell structure is formed into a square shape.
Preferably, the first and second electrodes are formed of a metal,
the casing includes annular shell main part, the top cap lock sets up the upper end of shell main part.
Preferably, the first and second electrodes are formed of a metal,
the extension length of the partition plate opposite to the IGBT chip is smaller than that of the partition plate not opposite to the IGBT chip.
Preferably, the first and second electrodes are formed of a metal,
the IGBT module comprises a shell, an IGBT chip, a substrate, a welding layer, a heat conduction structure and a radiator, wherein the IGBT chip is arranged in the shell, the substrate and the welding layer are arranged between the IGBT chip and the substrate, and the heat conduction structure and the radiator are arranged at the bottom of the substrate.
The invention also provides a packaging method of the IGBT module, which uses the IGBT module packaging structure to package the IGBT chip.
Preferably, the first and second electrodes are formed of a metal,
welding the IGBT chip and the bonding wire;
plastic packaging, namely pouring a plastic packaging material;
covering a top cover, and uniformly dividing the plastic packaging material into a plurality of spaces;
drying and solidifying into a gel.
The IGBT module packaging structure and the packaging method provided by the invention have the following beneficial effects:
according to the invention, the inside of the top cover of the module is designed into the fence type partition structure, after the module is subjected to plastic package, the cover is covered into the module, and the internal fence divides the plastic package material into a plurality of narrow spaces, so that the vibration space of the plastic package material is small, the swing amplitude is small, the pulling force on the bonding wire is greatly reduced, the failure rate is further reduced, and the reliability is greatly improved.
Drawings
Fig. 1 is an internal structural schematic diagram of an IGBT module package structure of the present invention;
fig. 2 is a schematic structural view of a housing in the IGBT module package structure of the invention; .
The reference numbers in the figures denote:
1. a heat sink; 2. a heat conducting structure; 3. a substrate; 4. welding layer; 5. a substrate; 6. welding layer; 7. an IGBT chip; 8. a gate aluminum line; 9. plastic packaging material; 10. bus bar terminals or pins; 11. a housing; 101. a top cover; 102. a housing main body; 12. a partition plate; 121. a first separator; 122. a second separator; 123. a cell structure.
Detailed Description
As shown in fig. 1-2, the present invention provides an IGBT module package structure, which includes:
a substrate 3 capable of carrying an IGBT chip 7 thereon;
a case 11 that covers the substrate 3, and that forms a cavity in which the IGBT chip 7 is housed inside the case 11, and in which the IGBT chip 7 is disposed;
the cavity is filled with a plastic package material 9, and the lower end face of the top cover 101 of the shell 11 is provided with at least one partition plate 12 extending downwards to separate the plastic package material 9.
According to the invention, the inside of the top cover of the module is designed into the fence type partition structure, after the module is subjected to plastic package, the cover is covered into the module, and the internal fence divides the plastic package material into a plurality of narrow spaces, so that the vibration space of the plastic package material is small, the swing amplitude is small, the pulling force on the bonding wire is greatly reduced, the failure rate is further reduced, and the reliability is greatly improved.
When the module is in vibration or vibration test of application process, the plastic packaging materials such as silica gel and epoxy resin are softer and have certain stickness, and when strong vibration, the plastic packaging material also can vibrate thereupon, can form the bonding wire to its inside simultaneously and drag, causes the damage or even the fracture to the combination of bonding wire and chip, and electrical connection breaks off, and the IGBT inefficacy. Especially, the module with larger volume has large internal space and large vibration amplitude of the plastic packaging material. The vibration space of the plastic package material is small, the swing amplitude is small, the pulling force on the bonding wire is greatly reduced, the failure rate is further reduced, and the reliability is greatly improved.
Preferably, the first and second electrodes are formed of a metal,
the partition plates 12 include first partition plates 121 extending in a first direction, the first partition plates 121 being plural and arranged at intervals from each other; and/or the partition board 12 comprises a second partition board 122 extending along the second direction, and the second partition board 122 is multiple and arranged at intervals; when both a first direction and a second direction are included, the first direction and the second direction intersect. The partition plate is in the optimal structure form, the plastic packaging glue in the inner cavity of the shell can be divided into smaller volume structures through the partition plate structures extending in two different directions, so that the vibration space of the plastic packaging material is further increased and reduced, the swing amplitude is reduced, and the reliability is improved.
Preferably, the first and second electrodes are formed of a metal,
the first direction and the second direction are perpendicular to each other, such that the plurality of first partitions 121 and the plurality of second partitions 122 intersect perpendicularly to form a rectangular cell structure 123. This is a further preferred form of the two-directional structure of the present invention, that is, two directions perpendicular to each other (for example, 121 is along the transverse direction, and 122 is along the longitudinal direction) can further divide the molding compound into rectangular cell structures with substantially equal size, so that the fixing effect of the molding compound in the cell structures is enhanced, and the vibration damping effect is further improved.
Preferably, the first and second electrodes are formed of a metal,
the first partition plates 121 are equally spaced from each other, so that the first partition plates 121 are uniformly distributed; and/or, the second partition plates 122 are equally spaced apart from each other by a distance between two adjacent second partition plates 122 to form a uniform distribution. The plastic package material is uniformly separated in the first direction and the second direction by the uniformly arranged first partition plates and the uniformly arranged second partition plates, so that the vibration reduction and noise reduction effects are enhanced.
Preferably, the first and second electrodes are formed of a metal,
the distance between two adjacent first partitions 121 is equal to the distance between two adjacent second partitions 122, so that the cell structure 123 is formed in a square shape. Therefore, the separated cavity structures are all square structures with equal sizes and areas, the uniform separation effect is further improved, and the vibration reduction and noise reduction effects on the plastic package material are enhanced.
Preferably, the first and second electrodes are formed of a metal,
the housing 11 includes a ring-shaped housing main body 102, and the top cover 101 is snap-fitted to one end of the housing main body 102. This is a further preferred embodiment of the housing according to the invention, i.e. the chip is accommodated by the housing body, the upper end of which is covered by the cover, so that the interior of the housing forms an effective inner chamber-sealing structure.
Preferably, the first and second electrodes are formed of a metal,
the extension length of the spacer 12 opposite to the IGBT chip 7 is smaller than the extension length of the spacer 12 not opposite to the IGBT chip 7. As shown in fig. 1, since there is a space between two adjacent chips, the extension length of the partition board extending from the space can be extended longer, so as to improve the separation effect on the molding compound in the height direction, while the partition board cannot be extended too long at the position opposite to the chip to prevent the partition board from extending to contact with the chip, thereby ensuring the normal operation of the chip.
Preferably, the first and second electrodes are formed of a metal,
inside the casing 11, and be located IGBT chip 7 with still be provided with substrate 5 and chip solder layer 6 between the base plate 3 bottom still is provided with heat conduction structure 2 and radiator 1. This is a further preferred form of construction of the IGBT module package structure of the invention,
1-a radiator, a cooling medium, a heat dissipation channel for a chip and an external installation;
2-a heat conduction structure (preferably heat conduction grease) for filling a tiny gap between the radiator and the metal substrate and increasing the radiating area;
3-substrate (preferably metal substrate), such as copper substrate, aluminum silicon carbide substrate, for better conducting heat away from the chip;
4-welding layer, welding the DCB substrate and the copper substrate together to achieve physical connection and electrical connection, wherein most of the DCB substrate and the copper substrate are made of tin paste or silver paste;
the 5-DCB substrate comprises a copper wiring layer on the surface of the substrate and mainly plays roles in electrical insulation between the electric device and a cooling medium, internal circuit bridging, heat dissipation and the like;
6-chip welding layer for welding chip and copper wiring together to achieve physical connection and electrical connection, wherein most of the chip is made of solder paste or silver paste
7-chip, IGBT chip;
8-grid aluminum wires for realizing the electrical connection between the chip and the copper wires and between the copper wires and the pins;
9-plastic package material, silica gel or epoxy resin, for protecting the chip and internal connection from external influence and insulation;
10-bus terminal or pin, to electrically connect the chip electrode with the outside.
The invention also provides a packaging method of the IGBT module, which uses the IGBT module packaging structure to package the IGBT chip. According to the invention, the inside of the top cover of the module is designed into the fence type partition structure, after the module is subjected to plastic package, the cover is covered into the module, and the internal fence divides the plastic package material into a plurality of narrow spaces, so that the vibration space of the plastic package material is small, the swing amplitude is small, the pulling force on the bonding wire is greatly reduced, the failure rate is further reduced, and the reliability is greatly improved.
Preferably, the first and second electrodes are formed of a metal,
welding the IGBT chip and the bonding wire;
plastic packaging, namely pouring a plastic packaging material;
covering a top cover, and uniformly dividing the plastic packaging material into a plurality of spaces;
the dried plastic packaging material is solidified into a gel.
The specific packaging method of the invention can effectively package the IGBT into the shell, realize the electrical connection with the outside and realize the manufacture of the integrated circuit module. When the module is in vibration or vibration test of application process, the plastic packaging materials such as silica gel and epoxy resin are softer and have certain stickness, and when strong vibration, the plastic packaging material also can vibrate thereupon, can form the bonding wire to its inside simultaneously and drag, causes the damage or even the fracture to the combination of bonding wire and chip, and electrical connection breaks off, and the IGBT inefficacy. Especially, the module with larger volume has large internal space and large vibration amplitude of the plastic packaging material. The vibration space of the plastic package material is small, the swing amplitude is small, the pulling force on the bonding wire is greatly reduced, the failure rate is further reduced, and the reliability is greatly improved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention. The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.

Claims (8)

1. The utility model provides a IGBT module packaging structure which characterized in that: the method comprises the following steps:
a substrate (3) on which an IGBT chip (7) can be carried;
a case (11) which covers the substrate (3) and in which a cavity for accommodating the IGBT chip (7) is formed inside the case (11), and the IGBT chip (7) is disposed in the cavity;
a plastic packaging material (9) is filled in the cavity, the IGBT chip (7) is connected with the bonding wire, and the IGBT chip (7) and the bonding wire are both subjected to plastic packaging through the plastic packaging material (9); at least one partition plate (12) extending downwards is arranged on the lower end face of the top cover (101) of the shell (11) to separate the plastic package material (9); the shell (11) comprises an annular shell main body (102), and the top cover (101) is arranged at the upper end of the shell main body (102) in a buckling mode; the extension length of the spacer (12) opposite to the IGBT chip (7) is smaller than the extension length of the spacer (12) not opposite to the IGBT chip (7).
2. The IGBT module package structure according to claim 1, wherein:
the partition plate (12) comprises a first partition plate (121) extending along a first direction, and the first partition plate (121) is a plurality of and arranged at intervals; and/or the baffle plate (12) comprises a second baffle plate (122) extending along the second direction, and the second baffle plate (122) is a plurality of and arranged at intervals; when both a first direction and a second direction are included, the first direction and the second direction intersect.
3. The IGBT module package structure according to claim 2, wherein:
the first direction and the second direction are perpendicular, so that the plurality of first partitions (121) and the plurality of second partitions (122) intersect perpendicularly to form a rectangular cell structure (123).
4. The IGBT module package structure of claim 3, characterized in that:
the first partition plates (121) are uniformly distributed, and the distance between every two adjacent first partition plates (121) is equal; and/or the second partition plates (122) are uniformly distributed, and the second partition plates (122) are spaced at equal distances.
5. The IGBT module package structure of claim 4, wherein:
the distance between two adjacent first partition boards (121) is equal to the distance between two adjacent second partition boards (122), so that the compartment structure (123) is formed in a square shape.
6. The IGBT module package structure of any one of claims 1-5, characterized in that:
the IGBT heat dissipation device is characterized in that a substrate (5) and a chip welding layer (6) are further arranged inside the shell (11) and between the IGBT chip (7) and the base plate (3), and a heat conduction structure (2) and a radiator (1) are further arranged at the bottom of the base plate (3).
7. A packaging method of an IGBT module is characterized in that:
packaging an IGBT chip by using the IGBT module packaging structure of any one of claims 1-6.
8. The method of packaging of claim 7, wherein:
welding the IGBT chip and the bonding wire;
plastic packaging, namely pouring a plastic packaging material;
covering a top cover, and uniformly dividing the plastic packaging material into a plurality of spaces;
drying and solidifying into a gel.
CN202010010609.2A 2020-01-06 2020-01-06 IGBT module packaging structure and packaging method Active CN111128981B (en)

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CN112964429A (en) * 2021-03-08 2021-06-15 西安中车永电电气有限公司 Sealing performance detection method of IGBT module

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CN202888150U (en) * 2012-11-14 2013-04-17 江苏爱普特半导体有限公司 Three-phase rectification module encapsulation housing
CN205303451U (en) * 2015-12-31 2016-06-08 天津津泰锝科技有限公司 Integrally -packaged power semiconductor device
CN110164826A (en) * 2019-06-12 2019-08-23 珠海格力电器股份有限公司 Power module and electronic equipment

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