CN111125890A - Functional simulation model of IGCT device - Google Patents
Functional simulation model of IGCT device Download PDFInfo
- Publication number
- CN111125890A CN111125890A CN201911252838.9A CN201911252838A CN111125890A CN 111125890 A CN111125890 A CN 111125890A CN 201911252838 A CN201911252838 A CN 201911252838A CN 111125890 A CN111125890 A CN 111125890A
- Authority
- CN
- China
- Prior art keywords
- control signal
- signal
- controllable switch
- circuit
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004088 simulation Methods 0.000 title claims abstract description 47
- 230000001052 transient effect Effects 0.000 claims abstract description 49
- 239000003990 capacitor Substances 0.000 claims description 29
- 102100031025 CCR4-NOT transcription complex subunit 2 Human genes 0.000 claims description 4
- 101001092183 Drosophila melanogaster Regulator of gene activity Proteins 0.000 claims description 4
- 101000919667 Homo sapiens CCR4-NOT transcription complex subunit 2 Proteins 0.000 claims description 4
- 101100294409 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) NOT5 gene Proteins 0.000 claims description 4
- 102100031033 CCR4-NOT transcription complex subunit 3 Human genes 0.000 claims description 3
- 101000919663 Homo sapiens CCR4-NOT transcription complex subunit 3 Proteins 0.000 claims description 3
- 102100032981 CCR4-NOT transcription complex subunit 4 Human genes 0.000 claims 1
- 101000942594 Homo sapiens CCR4-NOT transcription complex subunit 4 Proteins 0.000 claims 1
- 102100029469 WD repeat and HMG-box DNA-binding protein 1 Human genes 0.000 claims 1
- 101710097421 WD repeat and HMG-box DNA-binding protein 1 Proteins 0.000 claims 1
- 238000005094 computer simulation Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 9
- 230000000903 blocking effect Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Abstract
A functional simulation model of an IGCT device belongs to the technical field of simulation modeling of an Integrated Gate Commutated Thyristor (IGCT). The IGCT functional simulation model is formed by combining different circuit elements and comprises four sub-circuits such as a control signal delay sub-circuit, a steady-state sub-circuit, an on transient sub-circuit and an off transient sub-circuit, and the steady-state working characteristic, the on transient characteristic and the off transient characteristic of the IGCT are embodied. The functional simulation model of the IGCT device has the characteristics of high simulation speed, high simulation precision, simple circuit, easiness in realization, wide application range and the like, and can be effectively applied to the research of the transient characteristics of the IGCT switch and a system-level simulation circuit based on the IGCT multi-level frequency converter.
Description
Technical Field
The invention belongs to the technical field of Integrated Gate Commutated Thyristor (IGCT) simulation modeling, and particularly relates to a functional simulation model of an IGCT device.
Background
The large-capacity power electronic converter plays an important role in energy and electric energy conversion, and is widely applied to the fields of metallurgical transmission, west-east gas transmission, pumped storage, wind power generation, ship propulsion and the like.
The integrated gate commutated thyristor IGCT is invented in 1997 by ABB company, and the IGCT device has the characteristics of large conduction current, high bearable withstand voltage, low loss, high reliability, compact structure and the like due to the structural characteristics, and gradually becomes a mainstream device of a large-capacity power electronic converter.
When the high-power electronic device is applied, the energy in the turn-off process of the buffer absorption loop absorption device needs to be added to ensure the normal work of the power device; the research on the transient switching characteristics of the power device has important guiding significance on the structural design of a power unit, the control of a converter device and the like. At present, the research on the transient characteristics of the power device switch is mainly based on a simulation platform, and the establishment of a power device simulation model which has the advantages of high simulation speed, high precision, wide application range and easiness in implementation is a main difficulty.
The power device simulation modeling method can be divided into functional modeling and physical modeling. The functional modeling only considers the external characteristics of the power device, does not consider the geometric properties and the internal physical process, and is realized in the modes of simple data fitting, table look-up or empirical description and the like. The physical model modeling is based on the internal physical mechanism of the device, the model is accurate, the application range is wider, but the method has the defects of large calculation amount, and a plurality of physical parameters required by establishing the physical model are required to be provided by manufacturers, which brings inconvenience to users, so the method is mostly adopted by manufacturers of semiconductor devices.
Disclosure of Invention
The invention aims to provide an IGCT device functional simulation model, which is formed by combining different circuit elements and comprises four sub-circuits, namely a control signal delay sub-circuit, a stable sub-circuit, a turn-on transient sub-circuit, a turn-off transient sub-circuit and the like, and the IGCT device functional simulation model embodies the steady-state working characteristic, the turn-on transient characteristic and the turn-off transient characteristic of the IGCT. The functional simulation model of the IGCT device has the characteristics of high simulation speed, high simulation precision, simple circuit, easiness in implementation, wide application range and the like, and can be effectively applied to the research of the transient characteristics of the IGCT switch and a system-level simulation circuit based on the IGCT multi-level frequency converter.
According to the IGCT device data, extracting the turn-on delay time tdonOn-rise time trOff delay time tdoffOff delay time state feedback tdoffSFOn-state slope resistance RTTurn-on threshold voltage VT0Repeatable blocking voltage VDRMLeakage current IDRMAnd the like.
The invention comprises two input ports, one output port and four functional sub-circuits; two input ports comprise a gate control signal G and a current inflow port A, and one output port is a current outflow port K; the functional sub-circuit comprises a control signal delay sub-circuit, a steady-state sub-circuit, a turn-on transient sub-circuit and a turn-off transient sub-circuit; the input of the control signal delay sub-circuit is a gate control signal G, and the output of the control signal delay sub-circuit is respectively connected with the steady-state sub-circuit, the turn-on transient sub-circuit and the turn-off transient sub-circuit; the steady-state sub-circuit inputs current into port A and outputs current out of port K.
The control signal delay sub-circuit comprises two delay modules (TD 1-TD 2), two logic OR gates (OR 1-OR 2) and a logic NOT 1; the gate control signal G generates a delay signal G1 through a delay module TD1, the delay signal G1 generates a delay signal G2 through a delay module TD2, the delay signal G1 and the delay signal G2 generate a signal G3 through an OR gate OR1, and the delay signal G1 and the signal G3 generate an IGCT turn-on control signal G through an OR gate OR2onTurning on the control signal GonAn IGCT turn-off control signal G is generated through an NOT1off；
The steady state sub-circuit comprises three branches: a conducting branch, a cutting-off branch and a leakage current branch;
wherein, the conduction branch comprises a controllable switch (S1), a voltage control voltage source (VCVS1), a diode (VT0), and a resistor (R)T) A current sensor (Isen) connected in series; the turn-off branch consists of a controllable switch (S2) and a Voltage Control Current Source (VCCS) which are connected in series in a reverse direction; leakage of electricityThe current branch consists of a resistor (R _ slope); the positive end of a voltage control voltage source VCVS1 is input with VA _ CON, and the negative end is input with VK _ CON; two ends of the device A, K output VAK through a voltage sensor Vsen; the positive end of the voltage control current source VCCS inputs IA _ CON, and the negative end inputs IK _ CON;
turn on control signal GonA control signal of S1; off control signal GoffA control signal of S2;
5. the turn-on transient state sub-circuit consists of a voltage control voltage source (VCVS2), two resistors (R1 functional sub-circuit R2), three controllable switches (S3 functional sub-circuit S5), a delay module (TD3), a capacitor (C1), a logic AND gate (AND1) AND two logic NOT gates (NOT 2-NOT 3);
the voltage control voltage source VCVS1, the resistor R1 and the controllable switch S3 are sequentially connected in series and then connected with the capacitor C1 in parallel, and the resistor R2, the controllable switch S4 and the controllable switch S5 are sequentially connected in series and then connected with the capacitor C2 in parallel; the positive end of a voltage control voltage source VCVS2 is input with VAK, and the negative end is input with ground; the upper end of the resistor R2 outputs VA _ CON; the lower end of the controllable switch S5 outputs VK _ CON;
turn on control signal GonGenerating a control signal of S3 through an NOT2, and turning on a control signal GonTurning on control signal G for the control signal of S4onGenerating a signal G4 through a time delay module TD3 and a NOT3, and turning on a control signal GonAND G4 generates the control signal of S5 via AND gate AND 1;
6. the turn-off transient sub-circuit consists of a voltage control voltage source (VCVS3), three resistors (R3-R5), two inductors (L1-L2), two capacitors (C2-C3), five controllable switches (S6-S10), three delay modules (TD 4-TD 6), three logic NOT gates (NOT 4-NOT 6) AND three logic AND gates (AND 2-AND 4);
the voltage control voltage source VCVS3, the resistor R3 and the controllable switch S6 are sequentially connected in series and then connected in parallel with the capacitor C2, the resistor R4, the inductor L1 and the controllable switch S8 are connected in series to form a first branch, the resistor R5, the inductor L2 and the controllable switch S9 are connected in series to form a second branch, the controllable switch S10 is a third branch, the capacitor C3 is a fourth branch, the capacitor C2 and the controllable switch S7 are connected in series to form a fifth branch, and the first branch, the second branch, the third branch, the fourth branch and the fifth branch are connected in parallel; the positive end of a voltage control voltage source VCVS3 is input into IAK, and the negative end is input into ground; the upper end of the fourth branch outputs IA _ CON, and the lower end outputs IK _ CON;
off control signal GoffGenerating a control signal of S6 through an NOT 4; off control signal GoffA control signal of S7; off control signal GoffGenerating a signal G5 through a delay module TD4, generating a signal G6 through a NOT5 by G5, and turning off a control signal GoffThe signal G6 generates the control signal of S8 via AND gate AND 2; the signal G5 generates a signal G7 through a time delay module TD5 AND a NOT6, AND the signals G5 AND G7 generate a control signal of S9 through an AND gate AND 3; the signal G5 passes through the delay module TD6 to generate a signal G8, and the control signal G is turned offoffThe signal G8 generates the control signal of S10 via AND gate AND 4.
Drawings
FIG. 1 is a functional simulation model control signal delay sub-circuit diagram of an IGCT device according to the present invention.
FIG. 2 is a steady-state sub-circuit diagram of the functional simulation model of the IGCT device according to the present invention.
FIG. 3 is a diagram of an IGCT device functional simulation model turn-on transient sub-circuit.
FIG. 4 is a functional model turn-off transient sub-circuit diagram of the IGCT device according to the present invention.
Fig. 5 is a classic circuit diagram for studying transient characteristics of an IGCT switch.
Fig. 6 is a voltage-current simulation waveform diagram during an IGCT turn-on transient.
FIG. 7 is a voltage-current experimental waveform diagram during IGCT turn-on transient.
Fig. 8 is a voltage-current simulation waveform diagram during an IGCT turn-off transient.
Fig. 9 is a voltage-current experimental waveform diagram of an IGCT turn-off transient process.
Detailed Description
The technical solution of the present invention is further described by the following embodiments with reference to the accompanying drawings.
The invention provides a functional simulation model based on an IGCT device, which has the characteristics of high simulation speed, high simulation precision, simple and easy realization of a circuit and the like, and can be effectively applied to IGCT switch transient characteristic research and a system level simulation circuit based on an IGCT multi-level frequency converter.
The invention provides a functional simulation model of an IGCT device, which is specifically realized in the following way:
1. according to the IGCT device data, extracting the turn-on delay time tdonOn-rise time trOff delay time tdoffOff delay time tdoffSFOn-state slope resistance RTTurn-on threshold voltage VT0Repeatable blocking voltage VDRMLeakage current IDRMThe like;
2. the functional simulation model of the IGCT device comprises two input ports, one output port and four functional sub-circuits; the two input ports comprise a gate control signal G and a current inflow port A, one output port is a current outflow port K, and the functional sub-circuit comprises a control signal delay sub-circuit, a steady-state sub-circuit, a turn-on transient sub-circuit and a turn-off transient sub-circuit;
3. the control signal delay sub-circuit comprises two delay modules (TD 1-TD 2), two logic OR gates (OR 1-OR 2) and a logic NOT 1;
the gate control signal G generates a delay signal G1 through a delay module TD1, G1 generates a delay signal G2 through a delay module TD2, the delay signals G1 and G2 generate a signal G3 through an OR gate OR1, and the signals G1 and G3 generate an IGCT (integrated gate control) turn-on control signal G2 through an OR gate OR2onTurning on the control signal GonAn IGCT turn-off control signal G is generated through an NOT1offAs shown in fig. 1;
4. the steady state sub-circuit comprises three branches: a conducting branch, a cutting-off branch and a leakage current branch;
wherein, the conduction branch comprises a controllable switch (S1), a voltage control voltage source (VCVS1), a diode (VT0), and a resistor (R)T) A current sensor (Isen) connected in series; the turn-off branch consists of a controllable switch (S2) and a Voltage Control Current Source (VCCS) which are connected in series in a reverse direction; leakage current branch routingA resistor (R _ slope); the positive end of a voltage control voltage source VCVS1 is input with VA _ CON, and the negative end is input with VK _ CON; two ends of the device A, K output VAK through a voltage sensor Vsen; the positive end of the voltage control current source VCCS inputs IA _ CON, and the negative end inputs IK _ CON;
turn on control signal GonA control signal of S1; off control signal GoffA control signal of S2, as shown in fig. 2;
5. the switching-on transient state sub-circuit consists of a voltage control voltage source (VCVS2), two resistors (R1-R2), three controllable switches (S3-S5), a delay module (TD3), a capacitor (C1), a logic AND gate (AND1) AND two logic NOT gates (NOT 2-NOT 3);
the voltage control voltage source VCVS1, the resistor R1 and the controllable switch S3 are sequentially connected in series and then connected with the capacitor C1 in parallel, and the resistor R2, the controllable switch S4 and the controllable switch S5 are sequentially connected in series and then connected with the capacitor C2 in parallel; the positive end of a voltage control voltage source VCVS2 is input with VAK, and the negative end is input with ground; the upper end of the resistor R2 outputs VA _ CON; the lower end of the controllable switch S5 outputs VK _ CON;
turn on control signal GonGenerating a control signal of S3 through an NOT2, and turning on a control signal GonTurning on control signal G for the control signal of S4onGenerating a signal G4 through a time delay module TD3 and a NOT3, and turning on a control signal GonAND G4 generates the control signal of S5 via AND gate AND1, as shown in fig. 3;
6. the turn-off transient sub-circuit consists of a voltage control voltage source (VCVS3), three resistors (R3-R5), two inductors (L1-L2), two capacitors (C2-C3), five controllable switches (S6-S10), three delay modules (TD 4-TD 6), three NOT gates (NOT 4-NOT 6) AND three logic AND gates (AND 2-AND 4);
the voltage control voltage source VCVS3, the resistor R3 and the controllable switch S6 are sequentially connected in series and then connected in parallel with the capacitor C2, the resistor R4, the inductor L1 and the controllable switch S8 are connected in series to form a first branch, the resistor R5, the inductor L2 and the controllable switch S9 are connected in series to form a second branch, the controllable switch S10 is a third branch, the capacitor C3 is a fourth branch, the capacitor C2 and the controllable switch S7 are connected in series to form a fifth branch, and the first branch, the second branch, the third branch, the fourth branch and the fifth branch are connected in parallel; the positive end of a voltage control voltage source VCVS3 is input into IAK, and the negative end is input into ground; the upper end of the fourth branch outputs IA _ CON, and the lower end outputs IK _ CON;
off control signal GoffGenerating a control signal of S6 through an NOT 4; off control signal GoffA control signal of S7; off control signal GoffGenerating a signal G5 through a delay module TD4, generating a signal G6 through a NOT5 by G5, and turning off a control signal GoffThe signal G6 generates the control signal of S8 via AND gate AND 2; the signal G5 generates a signal G7 through a time delay module TD5 AND a NOT6, AND the signal G5 AND the signal G7 generate a control signal of S9 through an AND gate 3; the signal G5 passes through the delay module TD6 to generate a signal G8, and the control signal G is turned offoffThe signal G8 generates the control signal of S10 via AND gate AND4, as shown in fig. 4.
FIG. 1 shows an IGCT functional simulation model control signal delay sub-circuit, in which the delay module TD1 is set equal to the turn-on delay time tdonThe time delay module TD2 is set equal to the turn-off delay time tdoffMinus the turn-on delay time tdon；
FIG. 2 shows an IGCT functional simulation model steady-state sub-circuit, in which a diode VT0 represents an IGCT turn-on threshold voltage VT0And the resistor RT represents an IGCT on-state slope resistor RTThe voltage control voltage source VCVS1 represents the variation process of the voltage of the IGCT turn-on transient device, the voltage control current source VCCS represents the variation process of the IGCT turn-off transient device current, and the resistor R _ slope represents the IGCT blocking resistor (equal to V)DRM/IDRM)；
FIG. 3 shows an IGCT functional simulation model turn-on transient sub-circuit, in which a turn-on control signal G is providedonWhen the voltage is low level, the switch S3 is closed, and the voltage of the capacitor C1 represents the IGCT off-state blocking voltage; turn on control signal GonWhen the voltage is high, the switch S3 is switched off, the switches S4 and S5 are switched on, and an R2C1 discharge loop is triggered to embody the voltage change process of the end of the IGCT switching-on transient process; the time delay module TD3 is set equal to the turn-on rise time tr；
Shown in FIG. 4Switching off the transient sub-circuit for the IGCT functional simulation module, wherein a switch-off control signal GoffWhen the voltage is low, the switch S6 is closed, and the voltage of the capacitor C2 represents the on-state current of the IGCT; off control signal GoffWhen the voltage is at a high level, the switch S7 is closed, the switches S8, S9 and S10 are sequentially closed according to different delay times, and R4L1C2 and R5L2C2 discharge circuits are respectively triggered to reflect the current change process of the IGCT turn-off transient process; the time delay module TD4 is set equal to the turn-off delay time tdoffSubtracting off delay time state feedback tdoffSFThe delay module TD5 time setting equals the off delay time state feedback tdoffSFThe delay module TD6 time is set equal to 4 μ s;
FIG. 5 shows a classic circuit for studying the transient characteristics of an IGCT switch, a DC power supply VdcRepresents a DC capacitor CdcPower supply of (3), resistor RSInductor L and capacitor CSDiode DSForm an RLCD buffer absorption loop, an inductor LSDistributed inductance, L, representing IGCT branch circuitloadRepresenting the IGCT load DC current source, DfwRepresenting a freewheeling diode for the load dc current source.
The functional simulation model of the IGCT device provided by the invention is verified under the PSIM (Power simulation) simulation environment. The simulation parameters are as follows: the main circuit topology selects an IGCT switch transient characteristic research classical circuit (as shown in figure 5), wherein a direct current power supply Vdc2500V DC capacitor Cdc10mF, resistance RS0.5 omega, 5 muH inductance L, C capacitanceSThe control pulse is a square wave signal with duty ratio of 50% and frequency of 1kHz at 10 muf and load dc current source 2500A, IGCT.
FIGS. 6 and 7 are voltage-current simulation waveforms and experimental waveforms of IGCT turn-on transient process, respectively, wherein IIGCTIs the IGCT switching-on current waveform VIGCTIs the IGCT turn-on voltage waveform; FIGS. 8 and 9 are simulated voltage and current waveforms and experimental waveforms, respectively, for IGCT turn-off transient, where IIGCTIs the IGCT off-current waveform, VIGCTIs the IGCT off voltage waveform. Voltage and current simulation waveforms and graphs of IGCT switch transient process shown in FIGS. 6 and 8The coincidence degree of the voltage current experimental waveforms of the IGCT switch in the transient process is high as shown in FIG. 7 and FIG. 9, and the change trend and the characteristics of the voltage current in the transient process of the IGCT switch are effectively reflected.
The simulation result proves the correctness and the effectiveness of the functional simulation model of the IGCT device.
Claims (5)
1. An IGCT device functional simulation model is characterized in that: the functional simulation model of the IGCT device comprises two input ports, one output port and four functional sub-circuits; the two input ports comprise a gate control signal G and a current inflow port A, one output port is a current outflow port K, and the functional sub-circuit comprises a control signal delay sub-circuit, a steady-state sub-circuit, a turn-on transient sub-circuit and a turn-off transient sub-circuit; the input of the control signal delay sub-circuit is a gate control signal G, and the output of the control signal delay sub-circuit is respectively connected with the steady-state sub-circuit, the turn-on transient sub-circuit and the turn-off transient sub-circuit; the steady-state sub-circuit inputs current into port A and outputs current out of port K.
2. The IGCT device functional simulation model of claim 1, wherein: the control signal delay sub-circuit comprises a delay module TD1, a delay module TD2, a logical OR gate OR1, a logical OR gate OR2 and a logical NOT gate NOT 1;
the gate control signal G generates a delay signal G1 through a delay module TD1, the delay signal G1 generates a delay signal G2 through a delay module TD2, the delay signal G1 and the delay signal G2 generate a signal G3 through an OR gate OR1, and the delay signal G1 and the signal G3 generate an IGCT turn-on control signal G2 through an OR gate OR2onTurning on the control signal GonAn IGCT turn-off control signal G is generated through an NOT1off。
3. The IGCT device functional simulation model of claim 1, wherein: the steady state sub-circuit comprises three branches: a conducting branch, a cutting-off branch and a leakage current branch;
wherein, the conducting branch is composed of a controllable switch S1, a voltage control voltage source VCVS1, a diode VT0, a resistor RT)The current sensor Isen is connected in series; the turn-off branch consists of a controllable switch S2 and a voltage control current source VCCS which are reversely connected in series; the leakage current branch circuit consists of a resistor R _ slope; the positive end of a voltage control voltage source VCVS1 is input with VA _ CON, and the negative end is input with VK _ CON; the two ends of the device A, K output VAK through a voltage sensor Vsen; the positive terminal of the voltage control current source VCCS inputs IA _ CON, and the negative terminal inputs IK _ CON.
Turn on control signal GonA control signal of S1; off control signal GoffIs the control signal of S2.
4. The IGCT device functional simulation model of claim 1, wherein: the switching-on transient sub-circuit is composed of a voltage control voltage source VCVS2, a resistor R1, a resistor R2, a controllable switch S3, a controllable switch S4, a controllable switch S5, a time delay module TD3, a capacitor C1, a logic AND gate AND1, a logic NOT2 AND a logic NOT gate 3.
The voltage control voltage source VCVS1, the resistor R1 and the controllable switch S3 are sequentially connected in series and then connected in parallel with the capacitor C1, and the resistor R2, the controllable switch S4 and the controllable switch S5 are sequentially connected in series and then connected in parallel with the capacitor C2; the positive end of a voltage control voltage source VCVS2 is input with VAK, and the negative end is input with ground; the upper end of the resistor R2 outputs VA _ CON; the lower end of the controllable switch S5 outputs VK _ CON;
turn on control signal GonA control signal of a controllable switch S3 is generated through an NOT2, and a control signal G is switched ononFor the control signal of controllable switch S4, turn on control signal GonGenerating a signal G4 through a time delay module TD3 and a NOT3, and turning on a control signal GonThe AND signal G4 generates a control signal for the controllable switch S5 via an AND gate 1.
5. The IGCT device functional simulation model of claim 1, wherein: the turn-off transient sub-circuit is composed of a voltage control voltage source VCVS3, a resistor R3, a resistor R4, a resistor R5, an inductor L1, an inductor L2, a capacitor C2, a capacitor C3, a controllable switch S6, a controllable switch S7, a controllable switch S8, a controllable switch S9, a controllable switch S10, a delay module TD4, a delay module TD5, a delay module TD6, a logical NOT gate NOT4, a logical NOT gate NOT5, a logical NOT gate NOT6, a logical AND gate 2, a logical AND gate 3 AND a logical AND gate 4;
the voltage control voltage source VCVS3, the resistor R3 and the controllable switch S6 are sequentially connected in series and then connected in parallel with the capacitor C2, the resistor R4, the inductor L1 and the controllable switch S8 are connected in series to form a first branch, the resistor R5, the inductor L2 and the controllable switch S9 are connected in series to form a second branch, the controllable switch S10 is a third branch, the capacitor C3 is a fourth branch, the capacitor C2 and the controllable switch S7 are connected in series to form a fifth branch, and the first branch, the second branch, the third branch, the fourth branch and the fifth branch are connected in parallel; the positive end of a voltage control voltage source VCVS3 is input into IAK, and the negative end is input into ground; the upper end of the fourth branch circuit outputs IA _ CON, and the lower end of the fourth branch circuit outputs IK _ CON;
off control signal GoffGenerating a control signal of S6 through an NOT 4; off control signal GoffIs the control signal of the controllable switch S7; off control signal GoffThe signal G5 is generated by the delay module TD4, the signal G5 is generated by the NOT5 to generate the signal G6, and the control signal G is turned offoffThe signal G6 generates a control signal for the controllable switch S8 via the AND gate 2; the signal G5 generates a signal G7 through a time delay module TD5 AND a NOT6, AND the signal G5 AND the signal G7 generate a control signal of a controllable switch S9 through an AND gate 3; the signal G5 passes through the delay module TD6 to generate a signal controllable switch G8, and the signal G is turned offoffThe signal G8 generates the control signal of S10 via AND gate AND 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911252838.9A CN111125890A (en) | 2019-12-09 | 2019-12-09 | Functional simulation model of IGCT device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911252838.9A CN111125890A (en) | 2019-12-09 | 2019-12-09 | Functional simulation model of IGCT device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111125890A true CN111125890A (en) | 2020-05-08 |
Family
ID=70498059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911252838.9A Pending CN111125890A (en) | 2019-12-09 | 2019-12-09 | Functional simulation model of IGCT device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111125890A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114189237A (en) * | 2022-02-14 | 2022-03-15 | 西安石油大学 | IGCT circuit model, hard drive circuit model and modeling method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130082762A1 (en) * | 2011-09-29 | 2013-04-04 | Delta Electronics (Shanghai) Co., Ltd. | Power switch series circuit and control method thereof |
-
2019
- 2019-12-09 CN CN201911252838.9A patent/CN111125890A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130082762A1 (en) * | 2011-09-29 | 2013-04-04 | Delta Electronics (Shanghai) Co., Ltd. | Power switch series circuit and control method thereof |
Non-Patent Citations (3)
| Title |
|---|
| 兰志明;李崇坚;绳伟辉;王成胜;朱春毅;: "集成门极换向晶闸管开关特性" * |
| 杨培;李崇坚;: "基于20MVA NPC/H桥变流器功率器件模型的研究" * |
| 王成胜;李崇坚;李耀华;朱春毅;: "IGCT器件工作过程损耗分析" * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114189237A (en) * | 2022-02-14 | 2022-03-15 | 西安石油大学 | IGCT circuit model, hard drive circuit model and modeling method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Aharon et al. | Analysis of dual-carrier modulator for bidirectional noninverting buck–boost converter | |
| Thummala et al. | Digital control of a high-voltage (2.5 kV) bidirectional DC--DC flyback converter for driving a capacitive incremental actuator | |
| CN107609283B (en) | Modular multilevel converter efficient modeling method based on equivalent capacitance of bridge arm | |
| CN106374767B (en) | A kind of Modularized multi-level converter sub-module simulation model considering secondary circuit | |
| CN104410133A (en) | Equalization circuit based on Buck-Boost convertor and bidirectional LC (inductance capacitance) resonant convertor as well as implementation method | |
| CN104065295B (en) | It is applicable to the control method of the H bridge Mixed cascading inverter that voltage ratio is 1:2 | |
| CN108536949B (en) | LCC-HVDC simulation model based on inductance/capacitance switch model and parameter optimization method | |
| Weng et al. | A nonlinear control method for bumpless mode transition in noninverting buck–boost converter | |
| CN204304528U (en) | Based on Buck-Boost conversion and the equalizing circuit of two-way LC resonant transformation | |
| CN205982459U (en) | MMC developments sub - modular unit of simulation and transverter with topology switching ability | |
| Jiang et al. | A new all-solid-state bipolar high-voltage multilevel generator for dielectric barrier discharge | |
| CN206620051U (en) | A kind of multi input high-gain Z source converters based on switching capacity unit | |
| Wang et al. | Plug-in gate-loop compensators for series-connected IGBT drivers in a solid-state fault current limiter | |
| CN111125890A (en) | Functional simulation model of IGCT device | |
| Wang et al. | Research on efficient single-sided asymmetric modulation strategy for dual active bridge converters in wide voltage range | |
| CN102647076B (en) | Method for reducing output voltage ripples of Boost power electronics inverter | |
| CN107302307A (en) | A kind of many level power translation circuits of voltage-dropping type and inverter | |
| CN103138618A (en) | Novel power unit module applicable to modularized multi-level current converter | |
| CN204205961U (en) | Four gear variable stage switching capacity type AC/AC converters | |
| CN206992983U (en) | A kind of translation circuit and corresponding three-phase translation circuit and converting means | |
| CN110427660B (en) | Simulation method of high-voltage direct-current circuit breaker | |
| CN104467403B (en) | Buck soft switching circuit for super capacitor charging and control method | |
| Liqiang et al. | The IGCT test platform for voltage source inverters | |
| CN110061625A (en) | Four Port Translation devices and its control method with double-polarity control | |
| Kasiran et al. | 4-level capacitor-clamped boost converter with hard-switching and soft-switching implementations |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20200508 |