CN111112808A - Substrate dividing apparatus and substrate dividing method - Google Patents
Substrate dividing apparatus and substrate dividing method Download PDFInfo
- Publication number
- CN111112808A CN111112808A CN201910999186.9A CN201910999186A CN111112808A CN 111112808 A CN111112808 A CN 111112808A CN 201910999186 A CN201910999186 A CN 201910999186A CN 111112808 A CN111112808 A CN 111112808A
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- China
- Prior art keywords
- plasma
- substrate
- scribing line
- laser
- glass substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K10/00—Welding or cutting by means of a plasma
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K10/00—Welding or cutting by means of a plasma
- B23K10/003—Scarfing, desurfacing or deburring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
- C03B33/0222—Scoring using a focussed radiation beam, e.g. laser
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
- C03B33/023—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
- C03B33/033—Apparatus for opening score lines in glass sheets
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/006—Other surface treatment of glass not in the form of fibres or filaments by irradiation by plasma or corona discharge
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0075—Cleaning of glass
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Geochemistry & Mineralogy (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Mining & Mineral Resources (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Laser Beam Processing (AREA)
Abstract
In the substrate cutting apparatus of the present invention, the substrate is cut by heating only the vicinity of the scribing line. A substrate cutting apparatus (100) includes a laser processing apparatus (1) and a plasma apparatus (2). A laser processing device (1) forms a scribe line (S) on a glass substrate (G). A plasma device (2) irradiates plasma (P) to a scribe line (S) of a glass substrate (G) and cuts the glass substrate (G) along the scribe line (S) by thermal stress.
Description
Technical Field
The present invention relates to a substrate cutting apparatus and a substrate cutting method, and more particularly, to an apparatus and a method for cutting a substrate along a scribing line.
Background
Conventionally, a substrate is divided by forming scribe lines on both surfaces of the substrate and then applying a predetermined force to the upper surface and the lower surface of the substrate along the formed scribe lines (scribe lines) to break the upper surface and the lower surface of the substrate (see, for example, patent document 1).
Prior art documents
Patent document
Patent document 1: japanese patent laid-open publication No. 2014-200940
Disclosure of Invention
Problems to be solved by the invention
As a substrate dividing method, in addition to the above-mentioned method, CO is used2And (4) breaking the thermal stress of the laser.
However, in the utilization of CO2In laser thermal stress separation, if a metal, a dielectric film, or the like is present on a separation surface, the separation surface is reflected and cannot be separated. In addition, there are problems that expensive mirrors and lenses are required, and an optical design is required.
The invention aims to easily and reliably heat the vicinity of a scribing line in a substrate cutting device to cut a substrate.
Means for solving the problems
Hereinafter, a plurality of embodiments will be described as means for solving the problem. These means may be combined arbitrarily as needed.
A substrate cutting apparatus according to an aspect of the present invention includes a scribing line apparatus and a plasma apparatus.
The scribing line device forms a scribing line on the substrate. The scribe line is a crack that extends linearly on the surface of the substrate and advances sufficiently in the thickness direction of the substrate to cause cracking.
The plasma device is configured to irradiate plasma to a scribe line of a substrate to cut the substrate along the scribe line by thermal stress.
In this apparatus, the substrate is cut along the scribe line by thermal stress due to plasma. Since the plasma can locally heat the substrate, it is possible to heat only the vicinity of the scribe line, for example.
The substrate may also be composed of a brittle material.
The substrate may be made of glass.
The plasma device may also irradiate a plasma spot to a scribe line of the substrate. The spot irradiation is plasma irradiation at a plurality of sites along the scribe line.
The plasma device may also irradiate plasma lines to the scribe lines of the substrate. The line irradiation is to linearly irradiate plasma along the scribe line.
The plasma apparatus may clean the surface of the substrate by irradiating the substrate with plasma.
In this apparatus, both the cutting of the scribing line and the surface cleaning of the substrate can be performed simultaneously.
A substrate cutting method according to another aspect of the present invention includes the following processes.
◎ scribing process for forming a scribe line on a substrate
◎ plasma process for cutting a substrate along a scribe line by thermal stress by irradiating plasma to the scribe line
In this method, the substrate is cut along the scribe line by thermal stress due to plasma. Since the plasma can locally heat the substrate, it is possible to heat only the vicinity of the scribe line, for example.
In the plasma process, the frequency of the plasma may be 20kHz or more.
In the plasma process, the power applied to the electrode of the plasma may be 80w to 700 w.
In the plasma process, the amount of the gas for generating plasma introduced may be 10L/min to 50L/min.
Effects of the invention
In the substrate cutting apparatus and the substrate cutting method of the present invention, the substrate can be cut by heating only the vicinity of the scribing line.
Drawings
Fig. 1 is a schematic view of a laser processing apparatus according to embodiment 1 of the present invention.
Fig. 2 is a schematic view of a plasma cutting apparatus.
Fig. 3 is a schematic view showing a substrate cutting operation along a scribe line by the plasma cutting apparatus.
Fig. 4 is a graph showing the correlation between frequency, additional power, and plasma temperature.
Fig. 5 is a table showing the evaluation results of the experiment.
Detailed Description
1. Embodiment 1
A substrate cutting apparatus 100 according to embodiment 1 of the present invention includes: a laser processing apparatus 1 (an example of a scribing apparatus) shown in fig. 1, and a plasma apparatus 2 (an example of a plasma apparatus) shown in fig. 2 and 3. The laser processing apparatus 1 and the plasma processing apparatus 2 may be integrally formed or may be formed as a single body.
The laser processing apparatus 1 forms a scribing line S on the glass substrate G, and then the plasma apparatus 2 cuts the glass substrate G along the scribing line S. When the laser processing apparatus 1 and the plasma apparatus 2 are separate bodies, the glass substrate G is transported from the laser processing apparatus 1 to the plasma apparatus 2.
(1) Laser processing apparatus
(1-1) Overall Structure
A laser processing apparatus 1 for forming a scribe line according to embodiment 1 will be described with reference to fig. 1. Fig. 1 is a schematic view showing a laser processing apparatus according to embodiment 1 of the present invention.
The laser processing apparatus 1 includes a laser apparatus 3. The laser device 3 includes a laser oscillator 15 for irradiating the glass substrate G with laser light, and a laser control unit 17. The laser control unit 17 can control the driving of the laser oscillator 15 and the laser power. The type and thickness of the glass substrate G and the type and wavelength of the laser oscillator are not particularly limited.
The laser processing apparatus 1 includes a transmission optical system 5 that transmits laser light to a mechanical drive system described later. The transmission optical system 5 includes, for example, a condenser lens 19, a plurality of mirrors (not shown), a prism (not shown), and the like.
The laser processing apparatus 1 includes a drive mechanism 11 that changes the condensing angle of the laser beam by moving the position of the condensing lens 19 in the optical axis direction.
The laser processing apparatus 1 includes a processing table 7 on which a glass substrate G is mounted. The machining table 7 is moved by a machining table drive unit 13. The machining table drive unit 13 includes a moving device (not shown) that moves the machining table 7 in the horizontal direction with respect to a head (not shown). The moving device is a well-known mechanism having a guide rail, a motor, and the like.
The laser processing apparatus 1 includes a control unit 9. The control unit 9 is a computer system having a processor (e.g., CPU), a storage device (e.g., ROM, RAM, HDD, SSD, etc.), and various interfaces (e.g., a/D converter, D/a converter, communication interface, etc.). The control unit 9 performs various control operations by executing a program stored in a storage unit (a part or all of a storage area of the corresponding storage device).
The control unit 9 may be constituted by a single processor, but may be constituted by independent processors for respective controls.
The control unit 9 may control the laser control unit 17. The control unit 9 may control the drive mechanism 11. The control unit 9 may control the machining table driving unit 13.
The control unit 9 is connected to sensors for detecting the size, shape, and position of the glass substrate G, sensors and switches for detecting the state of each device, and an information input device, although not shown.
(1-2) scribing method
The laser processing apparatus 1 irradiates a laser beam to form a scribe line S on the glass substrate G. Specifically, during the irradiation of the laser light, the processing table 7 is moved by the processing table driving unit 13, thereby forming the scribing line S on the glass substrate G.
(2) Plasma device
(2-1) Overall Structure
The plasma apparatus 2 will be described with reference to fig. 2 to 3. Fig. 2 is a schematic view of a plasma cutting apparatus. Fig. 3 is a schematic view showing a substrate cutting operation of the plasma cutting apparatus along a scribing line.
The plasma apparatus 2 is an apparatus for generating plasma P, and applies power between opposing electrodes to generate glow discharge plasma between the electrodes at a pressure close to atmospheric pressure. Specifically, the plasma device 2 adopts a remote system in which active species are ejected from a discharge space and irradiated to an irradiation target.
Near atmospheric pressure means 1.013X 104～50.663×104The range of Pa is preferably 1.333X 10 from the viewpoints of easy pressure modulation and simplification of the apparatus structure4～10.664×104Pa, more preferably 9.331X 104～10.397×104Pa。
As shown in fig. 2, the plasma device 2 includes a plasma power supply 21. The plasma power supply 21 is a device that actually generates plasma P in the plasma device 2.
As shown in fig. 2 to 3, the plasma apparatus 2 has a plasma head 23. The plasma head 23 is a device for generating and irradiating plasma.
As shown in fig. 2, the plasma power supply 21 has a gas supply device 25. The gas supply device 25 is a device for controlling the amount of introduction of a process gas (plasma generating gas), for example, and realizes an irradiation amount control function for controlling the amount of irradiation of the plasma P. The gas supply device 25 includes, for example, a high-pressure gas cylinder (not shown) for a process gas, and a mass flow controller (not shown) for controlling the flow rate of the process gas introduced from the gas cylinder into the plasma head 23 through a pipe.
As shown in fig. 2, the plasma power supply 21 has a power supply device 27. The power supply device 27 applies power to a plasma electrode (not shown) provided in the plasma head 23. The plasma power supply control means is constituted by the gas supply device 25 and the power supply device 27 described above.
According to the above configuration, the process gas and the power are supplied from the plasma power supply 21 to the plasma head 23, and the plasma is turned ON/OFF (ON/OFF).
The machining table 7, the machining table drive unit 13, and the control unit 9 may be shared with the laser machining apparatus 1.
The control unit 9 may control the plasma power supply 21.
(2-2) substrate dividing operation of plasma apparatus
As shown in fig. 3, the plasma apparatus 2 performs a plurality of spot irradiations of the plasma P along a part or the whole of the scribing line S of the glass substrate G to cut the glass substrate G along the scribing line S. Specifically, each point of the plasma P is irradiated, and the processing stage 7 is moved by the processing stage driving unit 13, whereby the glass substrate G is cut along the scribing line S.
By the spot irradiation, even if the scribing line S is a non-linear shape, the division of the thermal plasma can be performed with high efficiency.
As described above, the plasma device 2 irradiates the glass substrate G with the plasma P to cut the glass substrate G along the scribe line S by thermal stress. The plasma P can locally heat the glass substrate G, and thus, for example, only the vicinity of the scribe line S can be heated.
The plasma apparatus 2 can clean the surface of the glass substrate G by irradiating the glass substrate G with plasma P. Specifically, the cleaning object is a scattered matter generated at the laser processing for forming the scribe line and a foreign matter attached to the glass substrate G in other processes and transportation.
In the above embodiment, both the cutting of the scribing line S and the surface cleaning of the glass substrate G can be performed simultaneously.
The plasma device is inexpensive because of its simple structure. Moreover, handling becomes easy.
(2-3) results of the experiment
An experiment in which how the plasma temperature changes is confirmed by the combination of the frequency and the applied power, the glass substrate is cut by the plasma, and the cut is compared with the glass substrate cut by the laser will be described with reference to fig. 4 to 5. Fig. 4 is a graph showing the correlation between frequency, additional power, and plasma temperature. Fig. 5 is a table showing the evaluation results of the experiment.
In the evaluation results of fig. 5, good results were obtained for all samples, and in fig. 5, ◎ means that the best value was obtained, ○ means that the second best value was obtained, and △ means that the normal good value was obtained.
As shown in FIG. 4, the plasma temperature is lower than the temperature range of the glass substrate when the glass substrate is cut by the laser, i.e., the temperature range of the laser device (200 to 400 ℃) due to the magnitude of the applied power when the frequency is 20 KHz. In other words, if the frequency exceeds 20KHz, it is known that the plasma temperature enters the laser device temperature region.
As shown in fig. 5, the frequency of the sample 1 was 20KHz, and a sufficient plasma temperature was not obtained in comparison with the laser. However, samples 2 to 6 have a very good effect by making the additional power relatively large. In addition, the frequency of the sample 5-20 exceeds 20KHz, so compared with laser, the method has a very good effect in glass cutting and comprehensive judgment. Particularly, in samples 5 to 20, even if the minimum applied power is 200w, a very good effect is obtained.
(2-4) conditions
The power applied to the electrodes is, for example, in the range of 80w to 700 w.
The frequency of the additional power on the plasma head is preferably, for example, over 20KHz, and more preferably over 380 KHz.
The kind of the gas for generating plasma is, for example, N2、Ar、He、CO2、O2And CDA (clean dry air).
The amount of the plasma generating gas introduced into the plasma head 23 is, for example, in the range of 10L/min to 50L/min.
The temperature of the plasma P is preferably 200 ℃.
The area of the plasma P irradiation port was 3mm2～80mm2The range of (1).
2. Other embodiments
While one embodiment of the present invention has been described above, the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the invention. In particular, the plurality of embodiments and modifications described in the present specification can be combined as desired.
The substrate may be a brittle material other than glass.
The laser processing method for forming the scribe line is not particularly limited, and a method of forming a plurality of focal points in the depth direction by utilizing thermal stress may be used.
The scribe line may be formed by a method other than laser processing. For example, the score line may be formed by a cutter wheel.
The plasma device 2 may irradiate plasma to cut the glass substrate G along the scribe line S. Specifically, the plasma P is simultaneously irradiated to the whole or a part of the scribing line S.
The power condition of the line irradiation is the same as that of the spot irradiation.
Industrial applicability
The invention can be widely applied to substrate cutting devices.
Description of the reference symbols
1: laser processing apparatus
2: plasma device
3: laser device
5: transmission optical system
7: processing table
9: control unit
11: driving mechanism
13: processing table drive unit
15: laser oscillator
17: laser control unit
19: condensing lens
21: plasma power supply
25: gas supply device
27: power supply device
100: substrate dividing apparatus
G: glass substrate
P: plasma body
S: scribing line
Claims (10)
1. A substrate cutting apparatus comprising:
a scribing line device for forming a scribing line on the substrate; and
and a plasma device for cutting the substrate along the scribing line by thermal stress by irradiating plasma on the scribing line of the substrate.
2. A substrate cutting apparatus according to claim 1,
the substrate is composed of a brittle material.
3. A substrate cutting apparatus according to claim 2,
the substrate is composed of glass.
4. A substrate cutting apparatus according to any one of claims 1 to 3,
the plasma device irradiates a plasma spot to the scribing line of the substrate.
5. A substrate cutting apparatus according to any one of claims 1 to 3,
the plasma device irradiates a plasma line to the scribing line of the substrate.
6. A substrate cutting apparatus according to any one of claims 1 to 5,
the plasma apparatus cleans the surface of the substrate by irradiating the substrate with plasma.
7. A substrate cutting method, comprising:
a scribing process for forming a scribing line on the substrate; and a plasma process of cutting the substrate along the scribing line by thermal stress by irradiating plasma on the scribing line of the substrate.
8. A substrate cutting method according to claim 7,
in the plasma process, the frequency of the plasma is 20kHz or more.
9. A substrate cutting method according to claim 7 or 8,
in the plasma process, the power applied to the electrode of the plasma is between 80w and 700 w.
10. A substrate cutting method according to any one of claims 7 to 9,
in the plasma process, the introduction amount of the plasma generation gas is 10L/min to 50L/min.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018203663 | 2018-10-30 | ||
| JP2018-203663 | 2018-10-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111112808A true CN111112808A (en) | 2020-05-08 |
Family
ID=70495372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910999186.9A Pending CN111112808A (en) | 2018-10-30 | 2019-10-21 | Substrate dividing apparatus and substrate dividing method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2020075852A (en) |
| KR (1) | KR20200049572A (en) |
| CN (1) | CN111112808A (en) |
| TW (1) | TWI757649B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1258398A (en) * | 1968-03-27 | 1971-12-30 | ||
| CN1701435A (en) * | 2003-01-23 | 2005-11-23 | 松下电器产业株式会社 | Method of manufacturing semiconductor device and cutting apparatus for cutting semiconductor wafer |
| JP2007076930A (en) * | 2005-09-12 | 2007-03-29 | Joyo Kogaku Kk | Method of cutting glass |
| CN105097482A (en) * | 2014-05-13 | 2015-11-25 | 株式会社迪思科 | Wafer processing method |
| CN105461207A (en) * | 2014-09-30 | 2016-04-06 | 三星钻石工业股份有限公司 | Cutting method and cutting device |
| CN107210204A (en) * | 2015-03-13 | 2017-09-26 | 古河电气工业株式会社 | Processing method, semiconductor chip and the surface protection band of semiconductor wafer |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3887394B2 (en) * | 2004-10-08 | 2007-02-28 | 芝浦メカトロニクス株式会社 | Brittle material cleaving system and method |
| WO2006070825A1 (en) * | 2004-12-28 | 2006-07-06 | Mitsuboshi Diamond Industrial Co., Ltd. | Method for cutting brittle material substrate and substrate cutting system |
| JP5317712B2 (en) * | 2008-01-22 | 2013-10-16 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method of semiconductor device |
| KR100984751B1 (en) * | 2008-09-09 | 2010-10-01 | 주식회사 코미코 | Electrostatic chuck containing double buffer layer for reducing thermal stress |
| JP5129826B2 (en) * | 2010-02-05 | 2013-01-30 | 三星ダイヤモンド工業株式会社 | Breaking method for brittle material substrate |
| JP6163341B2 (en) | 2013-04-02 | 2017-07-12 | 三星ダイヤモンド工業株式会社 | Break device |
| KR101854198B1 (en) * | 2016-08-05 | 2018-05-03 | 한국미쯔보시다이아몬드공업(주) | Method for dividing glass substrate including pre-cracking process |
-
2019
- 2019-10-21 CN CN201910999186.9A patent/CN111112808A/en active Pending
- 2019-10-23 KR KR1020190132440A patent/KR20200049572A/en unknown
- 2019-10-23 TW TW108138151A patent/TWI757649B/en not_active IP Right Cessation
- 2019-10-28 JP JP2019195550A patent/JP2020075852A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1258398A (en) * | 1968-03-27 | 1971-12-30 | ||
| CN1701435A (en) * | 2003-01-23 | 2005-11-23 | 松下电器产业株式会社 | Method of manufacturing semiconductor device and cutting apparatus for cutting semiconductor wafer |
| JP2007076930A (en) * | 2005-09-12 | 2007-03-29 | Joyo Kogaku Kk | Method of cutting glass |
| CN105097482A (en) * | 2014-05-13 | 2015-11-25 | 株式会社迪思科 | Wafer processing method |
| CN105461207A (en) * | 2014-09-30 | 2016-04-06 | 三星钻石工业股份有限公司 | Cutting method and cutting device |
| CN107210204A (en) * | 2015-03-13 | 2017-09-26 | 古河电气工业株式会社 | Processing method, semiconductor chip and the surface protection band of semiconductor wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202021918A (en) | 2020-06-16 |
| KR20200049572A (en) | 2020-05-08 |
| JP2020075852A (en) | 2020-05-21 |
| TWI757649B (en) | 2022-03-11 |
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