CN111108585B - 喷淋头及基板处理装置 - Google Patents
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Abstract
根据本发明的一实施例,基板处理装置包括:腔体,用于对基板实施工序;喷淋头,设置于所述腔体的内部且向所述基板喷射反应气体;以及基座,设置于所述喷淋头的下部且支撑所述基板;所述喷淋头包括:喷淋头本体,包括内部空间及多个喷射孔,所述内部空间从外部被供给反应气体,所述多个喷射孔与所述内部空间连通而喷射所述反应气体;流入板,设置于所述内部空间而将所述内部空间划分为流入空间及缓冲空间,且具有连通所述流入空间和所述缓冲空间的多个流入口;以及多个调节板,分别设置于所述流入口上且可移动,可以根据由移动引起的与所述流入板之间的间隔距离,限制所述反应气体从所述流入空间向所述缓冲空间移动。
Description
技术领域
本发明涉及喷淋头及基板处理装置,更详细地涉及可以移动多个调节板来限制反应气体的移动的喷淋头及基板处理装置。
背景技术
半导体装置在硅基板上包括很多层,这些层通过蒸镀工序蒸镀于基板上。这种蒸镀工序存在几个重要的议题,这些议题对评价所蒸镀的膜并选择蒸镀方法很重要。
第一,是所蒸镀的膜的“品质”(qulity)。这意味着组成(composition)、污染度(contamination levels)、损失度(defect density)、及机械性/电特性(mechanical andelectrical properties)。膜的组成可以根据蒸镀条件发生变化,这对于得到特定的组成(specific composition)非常重要。
第二,是贯穿晶片的均匀的厚度(uniform thickness)。尤其是,在形成有阶梯差(step)的非平面(nonplanar)形状的图案上部蒸镀的膜厚度非常重要。所蒸镀的膜的厚度是否均匀可以根据由蒸镀于阶梯部分的最小厚度除以蒸镀于图案上部表面的厚度的值定义的阶梯覆盖率判断。
与蒸镀相关的另一议题为填充空间(filling space)。这包括用包含氧化膜的绝缘膜填充金属线路之间的间隙填充(gap filling)。设置间隙是为了对金属线路进行物理及电绝缘。
这些议题中均匀度为与蒸镀工序相关的重要的议题之一,不均匀的膜在金属布线上导致高电阻(electrical resistance),增加机械性破损的可能性。
发明内容
技术课题
本发明的目的在于,提供一种喷淋头及基板处理装置,其操作调节板,根据基板的部位调节反应气体的供给量。
本发明的其它目的在于,提供一种容易调节工序均匀度的喷淋头及基板处理装置。
本发明的其它目的可以根据详细的说明和附图变得更加清楚。
课题解决方案
根据本发明的一实施例,基板处理装置包括:腔体,所述腔体用于对基板实施工序;喷淋头,所述喷淋头设置于所述腔体的内部且向所述基板喷射反应气体;以及基座,所述基座设置于所述喷淋头的下部且支撑所述基板;所述喷淋头包括:喷淋头本体,所述喷淋头本体包括内部空间和多个喷射孔,所述内部空间从外部被供给反应气体,所述多个喷射孔与所述内部空间连通而喷射所述反应气体;流入板,所述流入板设置于所述内部空间,用于将所述内部空间划分为流入空间及缓冲空间,所述流入板具有连通所述流入空间和所述缓冲空间的多个流入口;以及多个调节板,分别设置于所述流入口上且可移动,构成为与所述流入板隔开距离以使所述反应气体经各所述流入口从所述流入空间向所述缓冲空间移动,或者与所述流入板邻接以使所述反应气体无法通过所述各所述流入口,由此根据基板的部位调节反应气体的供给量。
所述流入板具有导向孔,所述导向孔形成于所述流入口的两侧中某一个以上;所述调节板具有导向条,所述导向条从与所述流入板相对的一面凸出且插入所述导向孔,所述调节板移动时,所述导向条沿着所述导向孔移动。
所述基板处理装置还包括多个电磁铁,所述电磁铁向所述调节板分别施加磁力来移动所述调节板。
所述腔体具备:上部开放的下部腔体;及上部腔体,所述上部腔体设置于所述喷淋头的上部而形成所述内部空间,用于开闭所述下部腔体的上部,与所述下部腔体一起形成对所述基板实施工序的空间;所述电磁铁安装于所述上部腔体中,分别位于所述调节板的上部。
所述基板处理装置还包括:扩散板,所述扩散板设置于所述缓冲空间,将所述缓冲空间划分为划分空间及扩散空间,所述扩散板具备连通所述划分空间和所述扩散空间的多个扩散孔;所述扩散板具备隔板,所述隔板从上部表面凸出且将所述划分空间划分为多个。
所述流入口与划分为多个的所述划分空间的各区域为一对一对应关系。
所述流入板在表面涂敷有树脂。
根据本发明的一实施例,喷淋头包括:喷淋头本体,所述喷淋头本体包括内部空间及多个喷射孔,所述内部空间从外部被供给反应气体,所述多个喷射孔与所述内部空间连通而喷射所述反应气体;流入板,所述流入板设置于所述内部空间,用于将所述内部空间划分为流入空间及缓冲空间,所述流入板具有连通所述流入空间和所述缓冲空间的多个流入口;以及多个调节板,分别设置于所述流入口上且可移动,构成为与所述流入板隔开距离以使所述反应气体经各所述流入口从所述流入空间向所述缓冲空间移动,或者与所述流入板邻接以使所述反应气体无法通过所述各所述流入口,由此根据基板的部位调节反应气体的供给量。
本发明具有如下的效果:
根据本发明的一实施例,通过移动调节板限制反应气体通过流入口移动,由此可以根据基板的部位调节反应气体的供给量。
另外,可在腔体外部通过电磁铁远程移动调节板,因此不必开放腔体或解除腔体内部的真空也能够容易调节工序均匀度。
附图说明
图1为简要地表示根据本发明的一实施例的基板处理装置的剖面图。
图2为简要地表示图1所示的上部腔体及喷淋头的剖面图。
图3为简要地表示图2所示的扩散板的平面图。
图4为简要地表示图2所示的流入板的平面图。
图5为表示图2所示的调节板的移动的剖面图。
图6为表示图2所示的调节板的剖面图。
图7为表示图2所示的电磁铁分别连接于控制器的状态的框图。
图8为表示图2所示的喷淋头的工作状态的剖面图。
具体实施方式
下面,参考所附的图1至图8更详细地说明本发明的优选实施例。本发明的实施例可以变形为各种形态,本发明的范围不应当解释为限于下面说明的实施例。为了向本领域普通技术人员更详细地说明本发明而提供本实施例。因此,为了强调更清楚的说明,可能夸张表示附图中出现的各要素的形状。
另外,下面以蒸镀装置为例进行说明,但是本发明的范围不限于此,可以应用于利用反应气体处理基板的多样的工序。
图1是简要地表示根据本发明的一实施例的基板处理装置的剖面图。如图1所示,基板处理装置10包括下部腔体12及上部腔体18。下部腔体12为上部开放的形状,在一侧具备基板W可出入的通道12a。基板W可以通过通道12a出入于下部腔体12的内部,闸阀(未图示)设置于通道12a的外部,可以开放或封闭通道12a。
上部腔体18开闭下部腔体12的开放的上部。若上部腔体18封闭下部腔体12的开放的上部,则下部腔体12及上部腔体18形成从外部封闭的内部空间。上部腔体18具备与后述的喷淋头本体16的内部空间连通的气体供给口18a,反应气体通过气体供给口18a供给到内部空间。
基座14设置于下部腔体12的内部,基板W放置于基座14的上部。基座14具备加热器(未图示),加热器通过从外部电源施加的电流将基板W加热到工序温度。
图2是简要地表示图1所示的上部腔体及喷淋头的剖面图。喷淋头包括喷淋头本体16、扩散板22及流入板24。喷淋头本体16具备:喷射部及凸缘部,所述喷射部连接在上部腔体18的下部且为平板形状,所述凸缘部设置于喷射部的外侧且固定于上部腔体18。喷射部与上部腔体18隔开配置,内部空间形成于上部腔体18和凸缘部之间。喷射部具备多个喷射孔16a,供给到内部空间的反应气体通过这些喷射孔16a喷射到基板W。反应气体可以包括氢(H2)或氮(N2)或者规定的其它惰性气体,可以包括诸如硅烷(SiH4)或二氯硅烷(SiH2Cl2)的前驱气体。另外,可以包括诸如乙硼烷(B2H6)或磷烷(PH3)的掺杂源气体。
反应气体与基板W反应而执行工序,然后通过排气环17排出到外部。排气环17具备多个排出孔17a,反应气体通过排出孔17a移动到排气环17的内侧之后排出到外部。为了强制排出反应气体,可以设置排气泵(未图示)。
图3是简要地表示图2所示的扩散板的平面图。如图2所示,扩散板22具备平板形状的扩散部、及设置于扩散部的外侧且固定于后述的流入板24的凸缘部。扩散部与流入板24隔开配置,划分空间23形成于流入板24和扩散部之间。扩散部具备多个扩散孔22a,供给到划分空间23的反应气体通过扩散孔22a喷射到位于下部的扩散空间16a。
这时,图3所示,通过多个隔板22p1、22p2,划分空间23划分为多个。圆形隔板22pl为以扩散板22的中心为基准的同心圆形状,将划分空间23沿着半径方向划分。放射隔板22p2以扩散板22的中心为基准配置为放射状,将划分空间23沿着圆周方向划分。不同于本实施例,划分空间23可以更细分或不那么细分。
图4是简要地表示图2所示的流入板的平面图。如图2所示,流入板24具备平板形状的流入部、及设置于流入部的外侧且固定于后述的上部腔体18的凸缘部。流入部与上部腔体18隔开配置,流入空间25形成于上部腔体18和流入部之间。流入部具备多个流入口25a,供给到流入空间25的反应气体可以通过这些流入口25a移动到位于下部的划分空间23。
这时,如图2所示,调节板30可设置于流入孔25a上而限制反应气体的移动。如图4所示,流入部具备形成于流入口25a的两侧的导向孔,调节板30具有从下部面凸出的一对导向条。导向条插入于导向孔,调节板30的移动时,导向条沿着导向孔移动。
图5是表示图2所示的调节板的移动的剖面图,图6是表示图2所示的调节板的剖面图。调节板30设置于流入口25a上,可以上下移动,若调节板30上升而与流入口25a或流入板24隔开距离,则反应气体可以通过流入口25a移动到划分空间23。相反,调节板30下降而与流入口25a或流入板24相邻接,则反应气体无法通过流入口25a移动到划分空间23。这时,导向条沿着导向孔移动,引导调节板30沿着规定的路径上升或下降。
如图6所示,调节板30具备由反应于磁力的物质构成的本体32和覆盖本体32的涂层31。如后所述,调节板30可以通过电磁铁施加磁力而上升或下降,本体32需要像金属那样对磁力有反应。另外,涂层31覆盖本体32不仅用于防止本体32的污染或氧化,而且是在与流入口25a或流入板24邻接的状态下维持流入口25a的气密性所必要的。
图7为表示图2所示的电磁铁分别连接于控制器的状态的框图,图8为表示图2所示的喷淋头的工作状态的剖面图。如图2所示,各调节板30与电磁铁42处于一对一的对应关系,可以通过电磁铁42上升。不同于本实施例,调节板30可以通过其它机构上升或下降。
具体地,各电磁铁42可以是多个(1、2、3、…n-1、n,n=整数),以位于调节板30的上部的状态安装于上部腔体18中。控制器40连接在各电磁铁42,可以向各电磁铁42施加电源或切断所施加的电源。因此,如图8所示,施加电源时,调节板30通过电磁铁42上升而与流入口25a或流入板24隔开距离,反应气体可以通过流入口25a移动到划分空间23,相反,若切断电源,调节板30下降而与流入口25a或流入板24邻接,反应气体无法通过流入口25a移动到划分空间23。
下面,参考图7及图8,如下说明反应气体的流动。
首先,喷射的反应气体被供给到基板W的上部,在基板W通过基座14加热的状态下,反应气体与基板W的表面反应而形成薄膜。这时,薄膜的厚度与通过喷射孔16a从上部喷射的反应气体的供给量成正比,基板W的表面中被供给少量反应气体的部分的薄膜厚度小,被供给大量反应气体的部分的薄膜厚度大。因此,反应气体向基板W的整体表面均匀地供给时,薄膜可以具有均匀的厚度。
但是,反应气体的供给量以外,薄膜的厚度还0与基座14的加热温度成正比,基板W的表面中加热温度低的部分的薄膜厚度小,加热温度高的部分的薄膜厚度大。因此,基座14的加热温度均匀的情况下,薄膜可以具有均匀的厚度,整体上具有均匀的加热温度的基座14是理想的。
但是,现实中不可能加工完全具有均匀的加热温度的基座14。尤其是,随着最近基板W的尺寸大型化,基座14的尺寸也趋于一起增加,由此难以在基板W上形成均匀的温度分布。即,将基板W加热至工序温度的过程中,加热器的固障或性能下降、及加热器的辐射热局部地变得不均衡。除此以外,影响薄膜厚度的要素(factor)多样,为了形成具有均匀厚度的薄膜,需要人为地调节上述说明的要素中的一部分。因此,在本发明的实施例中,意图将反应气体的供给量人为地调节为不均匀,来形成具有均匀厚度的薄膜。
例如,利用伪(dummy)基板W形成薄膜之后,测量薄膜的厚度。这时,调节供给到各基板W的部位的反应气体的供给量,在基板W表面的各区域可以喷射相对于面积相同量的反应气体。然后,与测量的薄膜厚度成正比地调节供给到各部位的反应气体的供给量。即,在基板W表面的特定区域,薄膜的厚度比基准值厚时,降低位于相应区域上部的调节板30,限制反应气体通过流入口25a的移动,从而可以减少反应气体的供给量。另外,相反在基板W表面的特定区域薄膜的厚度比基准值薄时,提升位于相应区域上部的调节板30,允许反应气体通过流入口25a的移动,从而可以增加反应气体的供给量。如前说明的控制器40可以根据测量的薄膜的厚度控制电磁铁42,以增减供给到各部位的反应气体的量。例如,前面说明的基准值可以是相对于测量的薄膜厚度的平均值,控制器40可以根据测量的薄膜厚度计算平均值。通过这种方法,只要经过几次的调节过程,就可以形成具有均匀厚度的薄膜,之后可以应用于实际工序。
通过优选的实施例详细说明了本发明,但是也可以是与此不同方式的实施例。因此,下面记载的权利要求的技术思想和范围不限于优选的实施例。
工业实用性
本发明可以应用于多种形态的半导体制造装置及制造方法。
Claims (9)
1.一种基板处理装置,其特征在于,包括:
腔体,所述腔体用于对基板实施工序;
喷淋头,所述喷淋头设置于所述腔体的内部且向所述基板喷射反应气体;以及
基座,所述基座设置于所述喷淋头的下部且支撑所述基板;
所述喷淋头包括:
喷淋头本体,所述喷淋头本体包括内部空间和多个喷射孔,所述内部空间从外部被供给反应气体,所述多个喷射孔与所述内部空间连通而喷射所述反应气体;
流入板,所述流入板设置于所述内部空间,用于将所述内部空间划分为流入空间及缓冲空间,所述流入板具有连通所述流入空间和所述缓冲空间的多个流入口;以及
多个调节板,分别设置于所述流入口上且可移动,构成为与所述流入板隔开距离以使所述反应气体经各所述流入口从所述流入空间向所述缓冲空间移动,或者与所述流入板邻接以使所述反应气体无法通过所述各所述流入口,由此根据基板的部位调节反应气体的供给量。
2.如权利要求1所述的基板处理装置,其特征在于,
所述流入板具有导向孔,所述导向孔形成于所述流入口的两侧中某一个以上;
所述调节板具有导向条,所述导向条从与所述流入板相对的一面凸出且插入所述导向孔,所述调节板移动时,所述导向条沿着所述导向孔移动。
3.如权利要求1所述的基板处理装置,其特征在于,
所述基板处理装置还包括多个电磁铁,所述电磁铁向所述调节板分别施加磁力来移动所述调节板。
4.如权利要求3所述的基板处理装置,其特征在于,
所述腔体具备:
上部开放的下部腔体;及
上部腔体,所述上部腔体设置于所述喷淋头的上部而形成所述内部空间,用于开闭所述下部腔体的上部,与所述下部腔体一起形成对所述基板实施工序的空间;
所述电磁铁安装于所述上部腔体中,分别位于所述调节板的上部。
5.如权利要求1所述的基板处理装置,其特征在于,
所述基板处理装置还包括:
扩散板,所述扩散板设置于所述缓冲空间,将所述缓冲空间划分为划分空间及扩散空间,所述扩散板具备连通所述划分空间和所述扩散空间的多个扩散孔;
所述扩散板具备隔板,所述隔板从上部表面凸出且将所述划分空间划分为多个。
6.如权利要求5所述的基板处理装置,其特征在于,
所述流入口与划分为多个的所述划分空间的各区域为一对一对应关系。
7.如权利要求1所述的基板处理装置,其特征在于,
所述流入板在表面涂敷有树脂。
8.一种喷淋头,其特征在于,包括:
喷淋头本体,所述喷淋头本体包括从外部被供给反应气体的内部空间及与所述内部空间连通而喷射所述反应气体的多个喷射孔;
流入板,所述流入板设置于所述内部空间,用于将所述内部空间划分为流入空间及缓冲空间,所述流入板具有连通所述流入空间和所述缓冲空间的多个流入口;以及
多个调节板,分别设置于所述流入口上且可移动,构成为与所述流入板隔开距离以使所述反应气体经各所述流入口从所述流入空间向所述缓冲空间移动,或者与所述流入板邻接以使所述反应气体无法通过所述各所述流入口,由此根据基板的部位调节反应气体的供给量。
9.如权利要求8所述的喷淋头,其特征在于,
所述流入板具备导向孔,所述导向孔形成于所述流入口的两侧中某一个以上;
所述调节板具备导向条,所述导向条从与所述流入板相对的一面凸出且插入于所述导向孔,所述调节板移动时,所述导向条沿着所述导向孔移动。
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