CN111106824B - Anti-reverse circuit of bridge driving circuit - Google Patents
Anti-reverse circuit of bridge driving circuit Download PDFInfo
- Publication number
- CN111106824B CN111106824B CN201911301024.XA CN201911301024A CN111106824B CN 111106824 B CN111106824 B CN 111106824B CN 201911301024 A CN201911301024 A CN 201911301024A CN 111106824 B CN111106824 B CN 111106824B
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- circuit
- mos tube
- bridge
- driving circuit
- diode
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- 239000003990 capacitor Substances 0.000 claims abstract description 14
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/017509—Interface arrangements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/007—Fail-safe circuits
Abstract
The application discloses an anti-reflection circuit of a bridge driving circuit, which comprises a bridge driving circuit and an anti-reflection circuit, wherein the anti-reflection circuit comprises a first resistor, a first capacitor and a first MOS tube; the source electrode of the first MOS tube is connected with the voltage source, the drain electrode of the first MOS tube is connected with the bridge driving circuit, the first resistor and the first capacitor are connected in parallel to form an RC parallel circuit, one end of the RC parallel circuit is connected with the voltage source, and the other end of the RC parallel circuit is connected with the grid electrode of the first MOS tube. The application solves the problem of large heat productivity of the diode anti-reverse circuit, and effectively ensures the anti-reverse connection of the circuit.
Description
Technical Field
The application relates to the field of circuit design, in particular to an anti-reflection circuit of a bridge driving circuit.
Background
The bridge driving circuit comprises a half-bridge driving circuit, an H-bridge driving circuit, a three-phase full-bridge driving circuit and a plurality of full-bridge driving circuits. The bridge driving circuits have the common characteristic that at least one upper bridge arm and one lower bridge arm are needed. N-MOSFET or IGBT is used for the switching tube of the bridge arm in the large-current bridge driving circuit, and the body diode is directly conducted if the power supply is reversely connected because the body diode exists in the N-MOSFET and the IGBT, so that overcurrent is damaged. However, the anti-reflection mode of the general circuit adopts a power diode, and if the current of the bridge driving circuit is particularly large, the heat productivity of the diode is excessive, so that the damage is caused.
Disclosure of Invention
In view of the above, the present application provides an anti-reflection circuit of a bridge driving circuit, so as to solve or at least partially solve the above-mentioned technical problems.
In order to achieve the above purpose, the technical scheme of the application is realized as follows:
the application provides an anti-reflection circuit of a bridge driving circuit, which comprises the bridge driving circuit and the anti-reflection circuit, wherein the anti-reflection circuit comprises a first resistor, a first capacitor and a first MOS tube;
the source electrode of the first MOS tube is connected with a voltage source, the drain electrode of the first MOS tube is connected with the bridge driving circuit, the first resistor and the first capacitor are connected in parallel to form an RC parallel circuit, one end of the RC parallel circuit is connected with the voltage source, and the other end of the RC parallel circuit is connected with the grid electrode of the first MOS tube.
Preferably, the anti-reflection circuit further comprises a power supply driving circuit, and the power supply driving circuit provides driving power for the conduction of the bridge driving circuit.
Preferably, the power supply driving circuit comprises a plurality of diodes and a control switch, and the diodes are connected to a connecting line of the RC parallel circuit and the grid electrode of the first MOS tube.
Preferably, the bridge driving circuit includes any one of the following: half-bridge drive circuit, H-bridge drive circuit, three-phase full-bridge drive circuit and multiple full-bridge drive circuits.
Preferably, the H-bridge driving circuit includes a second MOS transistor, a third MOS transistor, a fourth MOS transistor, and a fifth MOS transistor, where the second MOS transistor and the third MOS transistor are upper bridge arms, and the fourth MOS transistor and the fifth MOS transistor are lower bridge arms;
the diode in the power supply driving circuit comprises a first diode and a second diode, the cathodes of the first diode and the second diode are connected with the grid electrode of the first MOS tube, the anode of the first diode is connected with the grid electrodes of the second MOS tube and the fifth MOS tube, and the anode of the second diode is connected with the grid electrodes of the third MOS tube and the fourth MOS tube.
Preferably, the MOS tube is an N-MOSSET tube.
The beneficial effects of the application are as follows:
compared with the prior art, the MOS tube is arranged at the position of the voltage source, so that the reverse connection of the power supply can be effectively prevented, and the problem of large heat productivity of the diode anti-reverse circuit is solved; by arranging the capacitor on the grid electrode of the MOS tube, the conduction state of the MOS tube is ensured to be more stable.
The foregoing description is only an overview of the present application, and is intended to be implemented in accordance with the teachings of the present application in order that the same may be more clearly understood and to make the same and other objects, features and advantages of the present application more readily apparent.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the application. In the drawings:
FIG. 1 is a schematic block diagram of an anti-reflection circuit of an H-bridge driving circuit according to an embodiment of the present application;
FIG. 2 shows a schematic block diagram of a half-bridge drive circuit provided in accordance with one embodiment of the present application;
FIG. 3 shows a functional block diagram of an H-bridge drive circuit provided by one embodiment of the present application;
fig. 4 shows a schematic block diagram of a three-term full-bridge circuit provided by an embodiment of the application.
Detailed Description
Exemplary embodiments of the present application will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the application to those skilled in the art.
The application discloses an anti-reflection circuit of a bridge driving circuit.
Referring to fig. 1, an anti-reflection circuit in an embodiment of the application includes a bridge driving circuit and an anti-reflection circuit, the anti-reflection circuit includes a first resistor R 1 First capacitor C 1 And a first MOS transistor Q 1 ；
Wherein, the first MOS tube Q 1 The source electrode of the first MOS tube Q is connected with a voltage source 1 The drain electrode of (2) is connected with the bridge driving circuit, the first resistor R 1 And a first capacitor C 1 An RC parallel circuit is formed by parallel connection, one end of the RC parallel circuit is connected with a voltage source, and the other end is connected with the first MOS tube Q 1 Is connected to the gate of the transistor.
When the power supply is connected positively, the driving voltage is transmitted to the first MOS tube Q through the RC parallel circuit 1 Gate electrode of the first MOS transistor Q 1 Conducting to realize that the power supply supplies power to the bridge driving circuit, and conducting the power to the first MOS tube Q 1 First capacitor C connected to grid 1 Can store grid charges to enable the first MOS transistor Q 1 The conducting state of the MOS transistor is more stable, and the first MOS transistor Q can be also enabled 1 Will not be turned off immediately after power failure, but will remain on for a period of time, the holding time being defined by the first resistor R 1 And a first capacitor C 1 Is determined by the parameters of the (c). When the power supply is reversely connected, the first MOS transistor Q 1 The grid electrode of the first MOS tube Q has no voltage 1 Cannot be driven to be conducted, and the power supply cannot supply power to the bridge driving circuit, so that the reverse connection preventing function of the circuit is realized.
The RC circuit may be replaced by other circuits, for example, may further include an RC series circuit, an RC series-parallel circuit, etc., and of course, the driving of Q1 may also be implemented by other power sources, for example, a driving power source in a bridge driving circuit.
In a preferred embodiment, the anti-reflection circuit further comprises a power supply driving circuit which supplies driving power for the conduction of the bridge driving circuit. The power supply driving circuit provides driving voltage for the conduction of the MOS tube in the bridge driving circuit.
Further, the power supply driving circuit comprises a plurality of diodes and a control switch, and the diodes are connected to the connecting lines of the RC parallel circuit and the grid electrode of the first MOS tube.
In one embodiment, the bridge drive circuit includes any one of the following: half-bridge drive circuit, H-bridge drive circuit, three-phase full-bridge drive circuit and multiple full-bridge drive circuits. Reference is made to fig. 2, 3 and 4 for a schematic block diagram of the bridge driving circuit.
In one embodiment, as shown in FIG. 1, the H-bridge driving circuit includes a second MOS transistor Q 2 Third MOS transistor Q 3 Fourth MOS transistor Q 4 And a fifth MOS transistor Q 5 Wherein, the second MOS tube Q 2 And a third MOS transistor Q 3 Is an upper bridge arm, a fourth MOS tube Q 4 And a fifth MOS transistor Q 5 Is a lower bridge arm, see in particular fig. 1;
further, the diode in the power supply driving circuit comprises a first diode D 1 And a second diode D 2 And a first diode D 1 And a second diode D 2 Is connected with the first MOS tube Q 1 Gate connection of first diode D 1 Anode of (a) and second MOS transistor Q 2 And a fifth MOS transistor Q 5 Gate connection of the second diode D 2 Anode of (a) and third MOS transistor Q 3 And a fourth MOS transistor Q 4 Is connected to the gate of the transistor.
When the power supply is connected, the first MOS transistor Q 1 Conducting, and supplying a voltage source to a second MOS tube Q in the H-bridge driving circuit through a power driving circuit 2 And a fifth MOS transistor Q 5 Providing driving voltage for the third MOS transistor Q in the H bridge driving circuit 3 And a fourth MOS transistor Q 4 Providing driving voltage to conduct the H-bridge driving circuit, and controlling the switch to realize the second MOS transistor Q 2 And a fifth MOS transistor Q 5 Conducting or second MOS transistor Q 3 And a fifth MOS transistor Q 4 Conducting and further changing the current direction in the H-bridge circuit.
Of course, the structure of the power supply driving circuit and the connection relation between the structure and the bridge driving circuit can be adjusted according to practical situations, for example, the power supply driving circuit can be connected with only a bridge arm in a part of the bridge driving circuits, and other bridge arms can be driven by adopting an original power supply.
In a preferred embodiment, the MOS tube is an N-MOSSET tube.
In summary, the application discloses an anti-reflection circuit of a bridge driving circuit, which comprises a bridge driving circuit and an anti-reflection circuit, wherein the anti-reflection circuit comprises a first resistor, a first capacitor and a first MOS tube; the source electrode of the first MOS tube is connected with the voltage source, the drain electrode of the first MOS tube is connected with the bridge driving circuit, the first resistor and the first capacitor are connected in parallel to form an RC parallel circuit, one end of the RC parallel circuit is connected with the voltage source, and the other end of the RC parallel circuit is connected with the grid electrode of the first MOS tube. The application solves the problem of large heat productivity of the diode anti-reverse circuit, and effectively ensures the anti-reverse connection of the circuit.
The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any person skilled in the art can easily think about variations, substitutions and improvements within the technical scope of the present application, and the scope of the present application is intended to be covered by the present application.
In the description provided herein, numerous specific details are set forth. However, it is understood that embodiments of the application may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
Claims (2)
1. An anti-reverse circuit of a bridge driving circuit is characterized in that,
the anti-reflection circuit comprises a bridge driving circuit and an anti-reflection circuit, and the anti-reflection circuit comprises a first resistor, a first capacitor and a first MOS tube;
the source electrode of the first MOS tube is connected with a voltage source, the drain electrode of the first MOS tube is connected with the bridge driving circuit, the first resistor and the first capacitor are connected in parallel to form an RC parallel circuit, one end of the RC parallel circuit is connected with the voltage source, and the other end of the RC parallel circuit is connected with the grid electrode of the first MOS tube;
when the voltage source is connected positively, the driving voltage of the voltage source is transmitted to the grid electrode of the first MOS tube through the RC parallel circuit, and the first MOS tube is conducted to supply power to the bridge driving circuit; the first capacitor is capable of storing a gate charge;
when the voltage source is reversely connected, the driving voltage of the voltage source cannot be transmitted to the grid electrode of the first MOS tube through the RC parallel circuit, the first MOS tube cannot be driven to be conducted, and the bridge driving circuit is powered off;
the anti-reflection circuit further comprises a power supply driving circuit, wherein the power supply driving circuit provides a driving power supply for the conduction of the bridge driving circuit;
the power supply driving circuit comprises a plurality of diodes and a control switch, wherein the diodes are connected to a connecting line of the RC parallel circuit and the grid electrode of the first MOS tube;
the bridge driving circuit comprises any one of the following components: half-bridge drive circuit, H-bridge drive circuit, three-phase full-bridge drive circuit and multiple full-bridge drive circuits;
the H-bridge driving circuit comprises a second MOS tube, a third MOS tube, a fourth MOS tube and a fifth MOS tube, wherein the second MOS tube and the third MOS tube are upper bridge arms, and the fourth MOS tube and the fifth MOS tube are lower bridge arms;
the diode in the power supply driving circuit comprises a first diode and a second diode, the cathodes of the first diode and the second diode are connected with the grid electrode of the first MOS tube, the anode of the first diode is connected with the grid electrodes of the second MOS tube and the fifth MOS tube, and the anode of the second diode is connected with the grid electrodes of the third MOS tube and the fourth MOS tube.
2. The anti-reflection circuit of claim 1, wherein the MOS transistor is an N-MOSSET transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911301024.XA CN111106824B (en) | 2019-12-17 | 2019-12-17 | Anti-reverse circuit of bridge driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911301024.XA CN111106824B (en) | 2019-12-17 | 2019-12-17 | Anti-reverse circuit of bridge driving circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111106824A CN111106824A (en) | 2020-05-05 |
| CN111106824B true CN111106824B (en) | 2023-11-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201911301024.XA Active CN111106824B (en) | 2019-12-17 | 2019-12-17 | Anti-reverse circuit of bridge driving circuit |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205160498U (en) * | 2015-10-21 | 2016-04-13 | 天地融科技股份有限公司 | Reverse -connection -preventive circuit |
| CN105553356A (en) * | 2016-01-21 | 2016-05-04 | 南京奥联汽车电子电器股份有限公司 | High-current motor drive circuit for reverse ground terminal connection protection |
| CN105743076A (en) * | 2014-12-12 | 2016-07-06 | 安徽艾可蓝节能环保科技有限公司 | Power source reversal connection prevention circuit |
| CN205509491U (en) * | 2016-02-26 | 2016-08-24 | 珠海明远智睿科技有限公司 | DC power supply prevents reverse -connection protective circuit |
| CN110098605A (en) * | 2018-01-31 | 2019-08-06 | 上海安浦鸣志自动化设备有限公司 | One kind being based on PMOS tube low-voltage DC supply drive power supply reverse-connection preventing circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014114085B3 (en) * | 2014-09-29 | 2015-12-03 | Infineon Technologies Ag | Control circuit for reverse conducting IGBTs |
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2019
- 2019-12-17 CN CN201911301024.XA patent/CN111106824B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105743076A (en) * | 2014-12-12 | 2016-07-06 | 安徽艾可蓝节能环保科技有限公司 | Power source reversal connection prevention circuit |
| CN205160498U (en) * | 2015-10-21 | 2016-04-13 | 天地融科技股份有限公司 | Reverse -connection -preventive circuit |
| CN105553356A (en) * | 2016-01-21 | 2016-05-04 | 南京奥联汽车电子电器股份有限公司 | High-current motor drive circuit for reverse ground terminal connection protection |
| CN205509491U (en) * | 2016-02-26 | 2016-08-24 | 珠海明远智睿科技有限公司 | DC power supply prevents reverse -connection protective circuit |
| CN110098605A (en) * | 2018-01-31 | 2019-08-06 | 上海安浦鸣志自动化设备有限公司 | One kind being based on PMOS tube low-voltage DC supply drive power supply reverse-connection preventing circuit |
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| CN111106824A (en) | 2020-05-05 |
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