CN111106824A - Anti-reverse circuit of bridge driving circuit - Google Patents
Anti-reverse circuit of bridge driving circuit Download PDFInfo
- Publication number
- CN111106824A CN111106824A CN201911301024.XA CN201911301024A CN111106824A CN 111106824 A CN111106824 A CN 111106824A CN 201911301024 A CN201911301024 A CN 201911301024A CN 111106824 A CN111106824 A CN 111106824A
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- driving circuit
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- 239000003990 capacitor Substances 0.000 claims abstract description 13
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 3
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 3
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/017509—Interface arrangements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/007—Fail-safe circuits
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- Computer Hardware Design (AREA)
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- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Power Conversion In General (AREA)
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Abstract
The application discloses an anti-reverse circuit of a bridge driving circuit, which comprises the bridge driving circuit and the anti-reverse circuit, wherein the anti-reverse circuit comprises a first resistor, a first capacitor and a first MOS (metal oxide semiconductor) tube; the source electrode of the first MOS tube is connected with a voltage source, the drain electrode of the first MOS tube is connected with the bridge drive circuit, the first resistor and the first capacitor are connected in parallel to form an RC parallel circuit, one end of the RC parallel circuit is connected with the voltage source, and the other end of the RC parallel circuit is connected with the grid electrode of the first MOS tube. The invention solves the problem of large heat productivity of the diode reverse connection preventing circuit and effectively ensures the reverse connection preventing of the circuit.
Description
Technical Field
The application relates to the field of circuit design, in particular to an anti-reverse circuit of a bridge driving circuit.
Background
The bridge driving circuit comprises a half-bridge driving circuit, an H-bridge driving circuit, a three-phase full-bridge driving circuit and a plurality of full-bridge driving circuits. The bridge driving circuit has the common characteristics that at least one upper bridge arm and at least one lower bridge arm are required. The switch tube of the bridge arm in the heavy current bridge driving circuit mostly uses N-MOSFET or IGBT, and because the N-MOSFET and the IGBT have body diodes, if the power supply is reversely connected, the body diodes can be directly conducted, and overcurrent damage is caused. However, the power diode is often used as a reverse protection mode of a general circuit, and if the current of the bridge driving circuit is particularly large, the heat generated by the diode is too large, and further, the diode is damaged.
Disclosure of Invention
In view of the above problems, the present invention provides an anti-reverse circuit of a bridge driving circuit to solve or at least partially solve the above existing technical problems.
In order to achieve the purpose, the technical scheme of the invention is realized as follows:
the invention provides an anti-reverse circuit of a bridge driving circuit, which comprises the bridge driving circuit and an anti-reverse circuit, wherein the anti-reverse circuit comprises a first resistor, a first capacitor and a first MOS (metal oxide semiconductor) tube;
the source electrode of the first MOS tube is connected with a voltage source, the drain electrode of the first MOS tube is connected with the bridge drive circuit, the first resistor and the first capacitor are connected in parallel to form an RC parallel circuit, one end of the RC parallel circuit is connected with the voltage source, and the other end of the RC parallel circuit is connected with the grid electrode of the first MOS tube.
Preferably, the anti-reverse circuit further comprises a power driving circuit, and the power driving circuit provides a driving power supply for the conduction of the bridge driving circuit.
Preferably, the power driving circuit includes a plurality of diodes and a control switch, and the diodes are connected to a connection line between the RC parallel circuit and the gate of the first MOS transistor.
Preferably, the bridge driver circuit includes any one of: a half-bridge drive circuit, an H-bridge drive circuit, a three-phase full-bridge drive circuit, and a multi-phase full-bridge drive circuit.
Preferably, the H-bridge driving circuit includes a second MOS transistor, a third MOS transistor, a fourth MOS transistor, and a fifth MOS transistor, where the second MOS transistor and the third MOS transistor are upper bridge arms, and the fourth MOS transistor and the fifth MOS transistor are lower bridge arms;
the diode in the power driving circuit comprises a first diode and a second diode, the cathodes of the first diode and the second diode are connected with the grid electrode of the first MOS tube, the anode of the first diode is connected with the grid electrodes of the second MOS tube and the fifth MOS tube, and the anode of the second diode is connected with the grid electrodes of the third MOS tube and the fourth MOS tube.
Preferably, the MOS tube is an N-MOSSET tube.
The invention has the beneficial effects that:
compared with the prior art, the MOS tube is arranged at the position of the voltage source, so that the reverse connection of the power supply can be effectively prevented, and the problem of large heat productivity of the diode reverse connection prevention circuit is solved; the capacitor is arranged on the grid electrode of the MOS tube, so that the conduction state of the MOS tube is ensured to be more stable.
The foregoing description is only an overview of the technical solutions of the present application, and the present application can be implemented according to the content of the description in order to make the technical means of the present application more clearly understood, and the following detailed description of the present application is given in order to make the above and other objects, features, and advantages of the present application more clearly understandable.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the application. In the drawings:
FIG. 1 is a schematic block diagram of a debounce circuit of an H-bridge driver circuit according to an embodiment of the present invention;
FIG. 2 illustrates a schematic block diagram of a half-bridge driver circuit provided by one embodiment of the present invention;
FIG. 3 illustrates a functional block diagram of an H-bridge driver circuit provided by one embodiment of the present invention;
fig. 4 shows a schematic block diagram of a three-phase full bridge circuit according to an embodiment of the present invention.
Detailed Description
Exemplary embodiments of the present application will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The invention discloses an anti-reverse circuit of a bridge driving circuit.
Referring to fig. 1, the anti-reverse circuit in the embodiment of the present invention includes a bridge driving circuit and an anti-reverse circuit, where the anti-reverse circuit includes a first resistor R1A first capacitor C1And a first MOS transistor Q1；
Wherein, the first MOS transistor Q1Is connected with a voltage source, a first MOS tube Q1Is connected with the bridge driving circuit, a first resistor R1And a first capacitor C1The RC parallel circuit is formed by connecting in parallel, one end of the RC parallel circuit is connected with a voltage source, and the other end of the RC parallel circuit is connected with the first MOS tube Q1Is connected to the gate of (a).
When the power supply is positively connected, the driving voltage is transmitted to the first MOS transistor Q through the RC parallel circuit1The grid of (1) makes the first MOS transistor Q1Is conducted, so that the power supply supplies power to the bridge driving circuit, and the first MOS transistor Q1A first capacitor C connected to the gate1The grid charge can be stored, so that the first MOS transistor Q1The on state of the transistor is more stable, and the first MOS transistor Q can be simultaneously enabled1Will not be immediately turned off after power-off, but will be kept in a conducting state for a period of time by the first resistor R1And a first capacitor C1Is determined. When the power supply is reversely connected, the first MOS transistor Q1The grid of the first MOS tube Q has no voltage1The bridge drive circuit can not be driven to be conducted, and the power supply can not supply power to the bridge drive circuit, so that the reverse connection prevention function of the circuit is realized.
The RC circuit may also be replaced by other circuits, for example, an RC series circuit, an RC series-parallel circuit, etc., and of course, the driving of Q1 may also be implemented by other power supplies, such as a driving power supply in a bridge driving circuit.
In a preferred embodiment, the anti-reverse circuit further comprises a power supply driving circuit, and the power supply driving circuit provides driving power supply for the conduction of the bridge driving circuit. The power supply driving circuit provides driving voltage for the conduction of the MOS tube in the bridge driving circuit.
Furthermore, the power driving circuit comprises a plurality of diodes and a control switch, and the diodes are connected to a connecting line between the RC parallel circuit and the grid electrode of the first MOS tube.
In one embodiment, the bridge driver circuit includes any one of: a half-bridge drive circuit, an H-bridge drive circuit, a three-phase full-bridge drive circuit, and a multi-phase full-bridge drive circuit. Fig. 2, fig. 3 and fig. 4 are schematic block diagrams of the bridge driver circuit.
In one embodiment, as shown in fig. 1, the H-bridge driving circuit includes a second MOS transistor Q2And a third MOS transistor Q3And a fourth MOS transistor Q4And a fifth MOS transistor Q5Wherein, the second MOS transistor Q2And a third MOS transistor Q3Is an upper bridge arm and a fourth MOS tube Q4And a fifth MOS transistor Q5Is a lower bridge arm, see fig. 1 specifically;
further, the diode in the power driving circuit includes a first diode D1And a second diode D2And a first diode D1And a second diode D2Negative electrode of and first MOS tube Q1Of a first diode D1Positive electrode of and the second MOS transistor Q2And a fifth MOS transistor Q5Is connected to the gate of a second diode D2Positive electrode of and third MOS transistor Q3And a fourth MOS transistor Q4Is connected to the gate of (a).
When the power supply is positively connected, the first MOS transistor Q1When the power supply is conducted, the voltage source supplies power to a second MOS tube Q in the H-bridge driving circuit through the power supply driving circuit2And a fifth MOS transistor Q5Providing a driving voltage to a third MOS transistor Q in the H-bridge driving circuit3And a fourth MOS transistor Q4Providing a driving voltage to switch on the H-bridge driving circuit, and controlling the second MOS transistor Q by controlling the switch2And a fifth MOS transistor Q5Conducting or second MOS transistor Q3And a fifth MOS transistor Q4And conducting to change the current direction in the H-bridge circuit.
Of course, the structure of the power driving circuit and the connection relationship between the structure and the bridge driving circuit may also be adjusted according to actual conditions, for example, the power driving circuit may be connected to only some bridge arms in the bridge driving circuit, and other bridge arms may be driven by the original power supply.
In a preferred embodiment, the MOS transistor is an N-MOSSET transistor.
In summary, the invention discloses an anti-reverse circuit of a bridge driving circuit, which comprises the bridge driving circuit and the anti-reverse circuit, wherein the anti-reverse circuit comprises a first resistor, a first capacitor and a first MOS transistor; the source electrode of the first MOS tube is connected with a voltage source, the drain electrode of the first MOS tube is connected with the bridge drive circuit, the first resistor and the first capacitor are connected in parallel to form an RC parallel circuit, one end of the RC parallel circuit is connected with the voltage source, and the other end of the RC parallel circuit is connected with the grid electrode of the first MOS tube. The invention solves the problem of large heat productivity of the diode reverse connection preventing circuit and effectively ensures the reverse connection preventing of the circuit.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of changes, substitutions or improvements within the technical scope of the present invention, and all such changes, substitutions or improvements are included in the scope of the present invention.
In the description provided herein, numerous specific details are set forth. However, it is understood that embodiments of the application may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
Claims (6)
1. An anti-reverse circuit of a bridge driving circuit is characterized in that,
the anti-reverse circuit comprises a bridge driving circuit and an anti-reverse circuit, and the anti-reverse circuit comprises a first resistor, a first capacitor and a first MOS (metal oxide semiconductor) tube;
the source electrode of the first MOS tube is connected with a voltage source, the drain electrode of the first MOS tube is connected with the bridge drive circuit, the first resistor and the first capacitor are connected in parallel to form an RC parallel circuit, one end of the RC parallel circuit is connected with the voltage source, and the other end of the RC parallel circuit is connected with the grid electrode of the first MOS tube.
2. The anti-reverse circuit of the bridge driving circuit according to claim 1,
the anti-reverse circuit further comprises a power supply driving circuit, and the power supply driving circuit provides a driving power supply for the conduction of the bridge driving circuit.
3. The anti-reverse circuit of the bridge driving circuit according to claim 2,
the power driving circuit comprises a plurality of diodes and a control switch, and the diodes are connected to the RC parallel circuit and a connecting line of the grid of the first MOS tube.
4. The anti-reverse circuit of the bridge driving circuit according to claim 3,
the bridge driver circuit includes any one of: a half-bridge drive circuit, an H-bridge drive circuit, a three-phase full-bridge drive circuit, and a multi-phase full-bridge drive circuit.
5. The anti-reverse circuit of the bridge driving circuit according to claim 4,
the H-bridge driving circuit comprises a second MOS tube, a third MOS tube, a fourth MOS tube and a fifth MOS tube, wherein the second MOS tube and the third MOS tube are upper bridge arms, and the fourth MOS tube and the fifth MOS tube are lower bridge arms;
the diode in the power driving circuit comprises a first diode and a second diode, the cathodes of the first diode and the second diode are connected with the grid electrode of the first MOS tube, the anode of the first diode is connected with the grid electrodes of the second MOS tube and the fifth MOS tube, and the anode of the second diode is connected with the grid electrodes of the third MOS tube and the fourth MOS tube.
6. The anti-reverse circuit of the bridge driving circuit according to claim 5, wherein the MOS transistor is an N-MOSSET transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911301024.XA CN111106824B (en) | 2019-12-17 | 2019-12-17 | Anti-reverse circuit of bridge driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911301024.XA CN111106824B (en) | 2019-12-17 | 2019-12-17 | Anti-reverse circuit of bridge driving circuit |
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| Publication Number | Publication Date |
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| CN111106824A true CN111106824A (en) | 2020-05-05 |
| CN111106824B CN111106824B (en) | 2023-11-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201911301024.XA Active CN111106824B (en) | 2019-12-17 | 2019-12-17 | Anti-reverse circuit of bridge driving circuit |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160094216A1 (en) * | 2014-09-29 | 2016-03-31 | Infineon Technologies Ag | Drive Circuit for Reverse-Conducting IGBTs |
| CN205160498U (en) * | 2015-10-21 | 2016-04-13 | 天地融科技股份有限公司 | Reverse -connection -preventive circuit |
| CN105553356A (en) * | 2016-01-21 | 2016-05-04 | 南京奥联汽车电子电器股份有限公司 | High-current motor drive circuit for reverse ground terminal connection protection |
| CN105743076A (en) * | 2014-12-12 | 2016-07-06 | 安徽艾可蓝节能环保科技有限公司 | Power source reversal connection prevention circuit |
| CN205509491U (en) * | 2016-02-26 | 2016-08-24 | 珠海明远智睿科技有限公司 | DC power supply prevents reverse -connection protective circuit |
| CN110098605A (en) * | 2018-01-31 | 2019-08-06 | 上海安浦鸣志自动化设备有限公司 | One kind being based on PMOS tube low-voltage DC supply drive power supply reverse-connection preventing circuit |
-
2019
- 2019-12-17 CN CN201911301024.XA patent/CN111106824B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160094216A1 (en) * | 2014-09-29 | 2016-03-31 | Infineon Technologies Ag | Drive Circuit for Reverse-Conducting IGBTs |
| CN105743076A (en) * | 2014-12-12 | 2016-07-06 | 安徽艾可蓝节能环保科技有限公司 | Power source reversal connection prevention circuit |
| CN205160498U (en) * | 2015-10-21 | 2016-04-13 | 天地融科技股份有限公司 | Reverse -connection -preventive circuit |
| CN105553356A (en) * | 2016-01-21 | 2016-05-04 | 南京奥联汽车电子电器股份有限公司 | High-current motor drive circuit for reverse ground terminal connection protection |
| CN205509491U (en) * | 2016-02-26 | 2016-08-24 | 珠海明远智睿科技有限公司 | DC power supply prevents reverse -connection protective circuit |
| CN110098605A (en) * | 2018-01-31 | 2019-08-06 | 上海安浦鸣志自动化设备有限公司 | One kind being based on PMOS tube low-voltage DC supply drive power supply reverse-connection preventing circuit |
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| Publication number | Publication date |
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| CN111106824B (en) | 2023-11-03 |
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