CN111106184A - Back film structure for improving back efficiency of double-sided PERC battery and film coating method thereof - Google Patents
Back film structure for improving back efficiency of double-sided PERC battery and film coating method thereof Download PDFInfo
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- CN111106184A CN111106184A CN201911395481.XA CN201911395481A CN111106184A CN 111106184 A CN111106184 A CN 111106184A CN 201911395481 A CN201911395481 A CN 201911395481A CN 111106184 A CN111106184 A CN 111106184A
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 18
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 18
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000007888 film coating Substances 0.000 title abstract description 5
- 238000009501 film coating Methods 0.000 title abstract description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 20
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 23
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 22
- 229910000077 silane Inorganic materials 0.000 claims description 22
- 238000000576 coating method Methods 0.000 claims description 16
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910002804 graphite Inorganic materials 0.000 claims description 8
- 239000010439 graphite Substances 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 7
- 235000013842 nitrous oxide Nutrition 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 97
- 230000000052 comparative effect Effects 0.000 description 7
- 239000010409 thin film Substances 0.000 description 3
- 230000001737 promoting effect Effects 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a back film structure for improving back efficiency of a double-sided PERC battery and a film coating method thereof, belonging to the technical field of film coating of solar batteries. The solar cell comprises an AlO film positioned on the back surface of a cell piece, wherein a first SiN film is arranged on the AlO film, a second SiN film is arranged on the first SiN film, and a SiON film is arranged on the second SiN film. According to the invention, the reflectivity of the back surface is finally reduced through the film layer structures with different refractive indexes and film thicknesses, so that the short-circuit current of the back surface is increased, and the back surface efficiency is improved.
Description
Technical Field
The invention belongs to the technical field of solar cell coating, and relates to a back film structure for improving back efficiency of a double-sided PERC cell and a coating method thereof.
Background
The P-type PERC battery is a mainstream battery structure at present, the input and the extension of PERC capacity are enhanced at present, the P-type double-sided battery is based on the P-type PERC battery, and the generated energy of the assembly can be increased under the condition that the conventional size is not changed. At present, the double-sided rate of double-sided components of mainstream manufacturers is 65-75%, the back efficiency is lower than that of the front side, and a larger lifting space still exists.
Disclosure of Invention
It is an object of the present invention to address the above problems by providing a backside film structure that improves the backside efficiency of a double-sided PERC cell.
Another object of the present invention is to provide a method for back coating that improves the back efficiency of a double-sided PERC cell.
In order to achieve the purpose, the invention adopts the following technical scheme:
the utility model provides an improve back membrane structure of two-sided PERC battery back efficiency, includes the AlO film that is located the battery piece back, is equipped with first SiN film on the AlO film, is equipped with second SiN film on first SiN film, is equipped with the SiON film on second SiN film.
Furthermore, the thickness of the AlO film is 0.25-0.35nm, the thickness of the first SiN film is 18-22nm, the thickness of the second SiN film is 23-27nm, and the thickness of the SiON film is 48-52 nm.
Furthermore, the refractive index of the AlO film is 1.77, the refractive index of the first SiN film is 2.0, the refractive index of the second SiN film is 1.9, and the refractive index of the SiON film is 1.8.
A back surface coating method for improving the back surface efficiency of a double-sided PERC battery comprises the following steps:
A. the back surface of the cell piece is upward and inserted into an aluminum boat, the aluminum boat is placed into an ALD tubular cavity, a layer of AlO film is plated on the back surface of the cell piece,
B. putting the back side of the battery piece upwards into a graphite boat, putting the graphite boat into a tubular PECVD (plasma enhanced chemical vapor deposition), introducing ammonia gas and silane according to the flow ratio of 6:1, preparing a first SiN film on an AlO film, cooling to room temperature,
C. introducing ammonia gas and silane according to the flow ratio of 10:1, preparing a second SiN film on the first SiN film,
D. and 4, introducing laughing gas, ammonia gas and silane according to the flow ratio of 7.5:2.5:1, and preparing the SiON film on the second SiN film.
Further, in the step A, the temperature is 400-600 ℃.
Further, in step B, 4800sccm of ammonia gas, 800sccm of silane, 180s of plating time and 450-.
Further, in step C, 8000sccm of ammonia gas, 800sccm of silane, 230s of plating time and 450-.
Further, in step D, laughing gas of 6000sccm, ammonia gas of 2000sccm, silane of 800sccm, coating time of 340s, and temperature of 450-.
Furthermore, the thickness of the AlO film is 0.25-0.35nm, the thickness of the first SiN film is 18-22nm, the thickness of the second SiN film is 23-27nm, and the thickness of the SiON film is 48-52 nm.
Furthermore, the refractive index of the AlO film is 1.77, the refractive index of the first SiN film is 2.0, the refractive index of the second SiN film is 1.9, and the refractive index of the SiON film is 1.8.
Compared with the prior art, the invention has the advantages that:
through the film layer structure with different refractive indexes and film thicknesses, the reflectivity of the back is finally reduced, so that the back short-circuit current is improved, and the back efficiency is improved.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention.
Drawings
FIG. 1 is a schematic view of a backside film structure of the present invention.
FIG. 2 is a graph comparing the average reflectance of example 2 and comparative example 1.
In the figure: the solar cell comprises a cell piece 1, an AlO film 2, a first SiN film 3, a second SiN film 4, a SiON film 5, a Si0 film 6, a front AlO film 7 and a third SiN film 8.
Detailed Description
Example 1
As shown in fig. 1, the back film structure for improving the back efficiency of the double-sided PERC battery comprises an AlO film 2 positioned on the back of a battery piece 1, wherein a first SiN film 3 is arranged on the AlO film 2, a second SiN film 4 is arranged on the first SiN film 3, and a SiON film 5 is arranged on the second SiN film 4.
It should be understood by those skilled in the art that the front surface of the cell sheet 1 may adopt a film structure of the prior art, and in this embodiment, the film structure of the front surface of the cell sheet 1 includes, from top to bottom, a third SiN film 8, a front AlO film 7 and a Si0 film 6.
The thickness of the AlO film 2 is 0.25-0.35nm, the thickness of the first SiN film 3 is 18-22nm, the thickness of the second SiN film 4 is 23-27nm, and the thickness of the SiON film 5 is 48-52 nm.
The refractive index of the AlO film 2 is 1.77, the refractive index of the first SiN film 3 is 2.0, the refractive index of the second SiN film 4 is 1.9, and the refractive index of the SiON film 5 is 1.8.
The back film structure of the embodiment has an average reflectivity of 13.84%, and has the effects of improving back short-circuit current and back efficiency.
Example 2
A back surface coating method for improving the back surface efficiency of a double-sided PERC battery comprises the following steps:
A. the back of the cell 1 is upward and inserted into an aluminum boat, the aluminum boat is placed into an ALD tubular cavity, a layer of AlO film 2 is plated on the back of the cell 1,
B. putting the battery piece 1 with the back face facing upwards into a graphite boat, putting the graphite boat into a tubular PECVD (plasma enhanced chemical vapor deposition), introducing ammonia gas and silane according to the flow ratio of 6:1, preparing a first SiN film 3 on an AlO film 2,
C. introducing ammonia gas and silane according to the flow ratio of 10:1, preparing a second SiN film 4 on the first SiN film 3,
D. and 4, introducing laughing gas, ammonia gas and silane according to the flow ratio of 7.5:2.5:1, and preparing the SiON film 5 on the second SiN film 4.
Specifically, in step A, the temperature is 400-. Note that the AlO plating film is a prior art. In step B, ammonia gas of 4800sccm, silane of 800sccm, plating time of 180s, and temperature of 450-. In step C, 8000sccm ammonia gas, 800sccm silane, 230s coating time at 450-.
The thickness of the AlO film 2 is 0.25-0.35nm, the thickness of the first SiN film 3 is 18-22nm, the thickness of the second SiN film 4 is 23-27nm, and the thickness of the SiON film 5 is 48-52 nm.
The refractive index of the AlO film 2 is 1.77, the refractive index of the first SiN film 3 is 2.0, the refractive index of the second SiN film 4 is 1.9, and the refractive index of the SiON film 5 is 1.8. The average reflectance of the back film structure of this example was 13.84%,
in the embodiment, after the AlO film is grown in the ALD tubular mode, silane, ammonia and laughing gas are introduced into the tubular PECVD furnace tube step by step and in a graded manner, a certain proportion is controlled, the coating time, the coating power and the duty ratio are adjusted, film layer structures with different refractive indexes and film thicknesses are formed, and finally the reflectivity of the back is reduced, so that the purposes of promoting back short-circuit current and promoting back efficiency are achieved.
Meanwhile, the film structure prepared by the method has the same overall color, the color of the appearance of the assembly can be better ensured to be consistent, the process is low in cost, the recovery period is short, and the product competitiveness can be effectively improved.
Comparative example 1
A method for coating the back of a PERC battery comprises the following steps:
A. the back of the cell 1 is upward and inserted into an aluminum boat, the aluminum boat is placed into an ALD tubular cavity, a layer of AlO film 2 is plated on the back of the cell 1,
B. putting the battery piece 1 with the back face facing upwards into a graphite boat, putting the graphite boat into a tubular PECVD (plasma enhanced chemical vapor deposition), introducing ammonia gas and silane according to the flow ratio of 6:1, preparing a first SiN film 3 on an AlO film 2,
C. ammonia gas and silane are introduced according to the flow ratio of 10:1, and a second SiN film 4 is prepared on the first SiN film 3.
Specifically, in step A, the temperature is 400-. Note that the AlO plating film is a prior art. In step B, ammonia gas of 4800sccm, silane of 800sccm, plating time of 180s, and temperature of 450-. In step C, 8000sccm of ammonia gas, 800sccm of silane, 500s of coating time and 450-.
The thickness of the AlO film 2 is 0.25-0.35nm, the thickness of the first SiN film 3 is 18-22nm, and the thickness of the second SiN film 4 is 70-80 nm.
The refractive index of the AlO thin film 2 is 1.77, the refractive index of the first SiN thin film 3 is 2.0, and the refractive index of the second SiN thin film 4 is 1.9. The average reflectance of this comparative example was 19.41%.
By cell comparative experiments, example 2 was compared to comparative example 1, and the back side efficiency data was as follows:
as can be seen from the above table, the increase in Isc in example 2 and comparative example 1 is significant, and the gain of about 150mA is obtained in example 2, mainly because the reflectivity of the film made by using the film structure and the film coating method in example 2 is reduced by about 5.6% compared with the comparative example, and therefore the Isc gain is significant.
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the spirit or ambit of the invention as defined in the appended claims.
Claims (10)
1. The utility model provides an improve back membrane structure of two-sided PERC battery back efficiency which characterized in that, is equipped with first SiN film (3) including AlO film (2) that are located battery piece (1) back on AlO film (2), be equipped with second SiN film (4) on first SiN film (3), be equipped with SiON film (5) on second SiN film (4).
2. The backside film structure of claim 1, wherein the thickness of the AlO film (2) is 0.25-0.35nm, the thickness of the first SiN film (3) is 18-22nm, the thickness of the second SiN film (4) is 23-27nm, and the thickness of the SiON film (5) is 48-52 nm.
3. The backside film structure of claim 1, wherein the AlO film (2) has a refractive index of 1.77, the first SiN film (3) has a refractive index of 2.0, the second SiN film (4) has a refractive index of 1.9, and the SiON film (5) has a refractive index of 1.8.
4. A back surface coating method for improving the back surface efficiency of a double-sided PERC battery is characterized by comprising the following steps:
A. the back of the cell (1) is upward and inserted into an aluminum boat, the aluminum boat is placed into an ALD tubular cavity, a layer of AlO film (2) is plated on the back of the cell (1),
B. putting the battery piece (1) with the back face upward into a graphite boat, putting the graphite boat into a tubular PECVD (plasma enhanced chemical vapor deposition), introducing ammonia gas and silane according to the flow ratio of 6:1, preparing a first SiN film (3) on an AlO film (2), cooling to room temperature,
C. introducing ammonia gas and silane according to the flow ratio of 10:1, preparing a second SiN film (4) on the first SiN film (3), cooling to room temperature,
D. and (3) introducing laughing gas, ammonia gas and silane according to the flow ratio of 7.5:2.5:1, and preparing the SiON film (5) on the second SiN film (4).
5. The method as claimed in claim 4, wherein the temperature in step A is 400-600 ℃.
6. The method as claimed in claim 4, wherein in step B, ammonia gas is introduced at 4800sccm, silane is introduced at 800sccm, and the coating time is 180s at 450-490 ℃.
7. The method as claimed in claim 4, wherein in step C, 8000sccm of ammonia gas, 800sccm of silane, 230s of plating time and 450-.
8. The method as claimed in claim 4, wherein in step D, 6000sccm of laughing gas, 2000sccm of ammonia gas, 800sccm of silane, 340s of coating time and 450-490 ℃ are introduced.
9. The backside coating method for improving backside efficiency of double-sided PERC cell as claimed in claim 4, wherein the thickness of the AlO film (2) is 0.25-0.35nm, the thickness of the first SiN film (3) is 18-22nm, the thickness of the second SiN film (4) is 23-27nm, and the thickness of the SiON film (5) is 48-52 nm.
10. The backside coating method for improving backside efficiency of double-sided PERC battery as claimed in claim 4, wherein the refractive index of the AlO film (2) is 1.77, the refractive index of the first SiN film (3) is 2.0, the refractive index of the second SiN film (4) is 1.9, and the refractive index of the SiON film (5) is 1.8.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108365023A (en) * | 2018-01-30 | 2018-08-03 | 无锡尚德太阳能电力有限公司 | Coating process for the black silicon face passivation of polycrystalline |
| CN109087956A (en) * | 2018-07-16 | 2018-12-25 | 横店集团东磁股份有限公司 | A kind of two-sided PERC solar battery structure and its preparation process |
| CN109148643A (en) * | 2018-08-06 | 2019-01-04 | 横店集团东磁股份有限公司 | A method of the PERC battery solving ALD mode is reduced in electrical pumping or light injection behind efficiency |
| CN109509796A (en) * | 2018-12-26 | 2019-03-22 | 苏州腾晖光伏技术有限公司 | A kind of backside passivation film and back side coating film technique for p-type monocrystalline PERC battery |
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- 2019-12-30 CN CN201911395481.XA patent/CN111106184A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108365023A (en) * | 2018-01-30 | 2018-08-03 | 无锡尚德太阳能电力有限公司 | Coating process for the black silicon face passivation of polycrystalline |
| CN109087956A (en) * | 2018-07-16 | 2018-12-25 | 横店集团东磁股份有限公司 | A kind of two-sided PERC solar battery structure and its preparation process |
| CN109148643A (en) * | 2018-08-06 | 2019-01-04 | 横店集团东磁股份有限公司 | A method of the PERC battery solving ALD mode is reduced in electrical pumping or light injection behind efficiency |
| CN109509796A (en) * | 2018-12-26 | 2019-03-22 | 苏州腾晖光伏技术有限公司 | A kind of backside passivation film and back side coating film technique for p-type monocrystalline PERC battery |
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