CN111103182A - Method for simply detecting bonding damage - Google Patents
Method for simply detecting bonding damage Download PDFInfo
- Publication number
- CN111103182A CN111103182A CN201911130630.XA CN201911130630A CN111103182A CN 111103182 A CN111103182 A CN 111103182A CN 201911130630 A CN201911130630 A CN 201911130630A CN 111103182 A CN111103182 A CN 111103182A
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- Prior art keywords
- chip
- damage
- bonding
- simply detecting
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/32—Polishing; Etching
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N2021/95638—Inspecting patterns on the surface of objects for PCB's
- G01N2021/95646—Soldering
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Bonding is an indispensable important link in integrated circuit packaging, and if the control is not good, the PAD of a bonding part is easy to damage, and the integrated circuit has electric leakage, poor performance and even circuit failure. The existing pressure welding damage detection technology has long period and high cost, and is very unfavorable in time and cost. The invention provides a method for simply detecting bonding damage, which is characterized in that a chip is unsealed, metal on the surface of a PAD is dissolved by aqua regia, then acid corrosion is carried out, the PAD surface is observed under a microscope, if a corroded pattern is observed, bonding damage exists, if a corroded pattern is not observed, bonding damage does not exist, and therefore whether bonding damage exists or not can be simply and reliably judged. The pressure welding damage method provided by the invention has the advantages of short implementation period, low cost and high reliability.
Description
Technical Field
The present invention relates to a method for simply detecting bonding damage, and more particularly, to a method for detecting bonding damage in which corrosion pits are formed by acid etching to facilitate observation under a microscope.
Background
The bonding is an indispensable important link in the integrated circuit packaging, the lead for bonding is changed from the original gold wire to the copper wire along with the requirement of controlling the manufacturing cost of the middle-low end integrated circuit, the hardness of the copper wire is higher than that of the gold wire, the bonding strength is correspondingly improved in the bonding, and if the control is not good, the PAD of a bonding part is easily damaged, and the integrated circuit is easy to leak electricity, has poor performance and even has circuit failure.
Since the PAD portion is covered with metal, the leakage current is not easily found in the front detection, and the detection needs to be performed on the back surface by an EMMI (micro optical microscope) or an OBIRCH (laser beam resistance anomaly detection) and then by a FIB (focused ion beam) for confirmation, so that the trial production and detection cost of the whole sample is high, and the method is very disadvantageous in terms of time and cost.
Disclosure of Invention
The invention provides a method for detecting bonding damage by forming corrosion pits through acid corrosion so as to be observed under a microscope, when bonding damage exists, because slight damage exists on an oxide layer 1, a substrate silicon 2 below the oxide layer is corroded by acid liquor permeated into the oxide layer to form a corrosion pit 3, a corroded pattern is easy to observe under the microscope, and if the oxide layer 1 is not damaged by bonding, because the corrosion rate of the acid liquor to the oxide layer 1 is slow, the corroded pattern cannot be observed under the microscope, so that whether bonding abnormality exists in chip packaging can be quickly judged.
The invention provides a method for simply detecting bonding damage, which comprises the following steps:
(A) removing a chip packaging material (101), putting the chip into aqua regia (a mixture of concentrated hydrochloric acid and concentrated nitric acid in a volume ratio of 3: 1) (102), fully dissolving PAD part metal, taking out the chip, putting the chip into deionized water, washing for 5-15 minutes (103), drying the chip by using clean gas with stable property (104), observing the PAD part of the chip under a microscope (105), and continuing to perform the step (B) when the PAD surface is not obviously damaged;
(B) and (3) soaking the chip in an acid corrosive solution for 25-35 minutes (106), taking out the chip, washing the chip in deionized water for 5-15 minutes (107), drying the chip by using clean gas with stable properties (108), and observing a PAD part of the chip under a microscope (109).
As a preferable mode of the method for simply detecting the bonding damage of the present invention, the method for removing the chip packaging material is chemical unsealing, mechanical unsealing, laser unsealing or Plasma unsealing.
As a preferable embodiment of the method for simply detecting bonding damage of the present invention, the acid etching solution is a mixed acid aqueous solution of nitric acid and ammonium bifluoride.
As a preferable aspect of the method for simply detecting bonding damage of the present invention, the percentage of nitric acid in the acid etching solution is 60.8%.
As a preferable aspect of the method for simply detecting the bonding damage of the present invention, the percentage of ammonium bifluoride in the acid etching solution is 0.36%.
As a preferable aspect of the method for simply detecting bonding damage of the present invention, the time for rinsing the chip in deionized water is 10 minutes.
As a preferable aspect of the method for simply detecting the bonding damage of the present invention, the clean stable gas is nitrogen gas.
As a preferable aspect of the method for simply detecting bonding damage of the present invention, the time for immersing the chip in the acid etching solution is 30 minutes.
As described above, according to the method for easily detecting a bonding damage provided by the present invention, the PAD surface is observed under a microscope after the chip is unsealed and the PAD surface metal is dissolved by aqua regia, and then the PAD surface is subjected to acid etching, and it is indicated that a bonding damage exists if an etched pattern is observed, and it is indicated that no bonding damage exists if an etched pattern is not observed, so that it is possible to easily and reliably determine whether a bonding damage exists. The pressure welding damage method provided by the invention has the advantages of short implementation period, low cost and high reliability.
Drawings
FIG. 1 is a flow chart of the present invention.
Fig. 2 is a schematic diagram of the principle of the present invention.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Example 1:
putting the chip into concentrated sulfuric acid for heating, taking out the chip after the packaging material is corroded, cleaning the chip by using absolute ethyl alcohol, and finally cleaning the chip by using deionized water; put into the king water with the chip, fully dissolve PAD portion metal, take out the chip, put into the deionized water with the chip and wash 10 minutes, weather the chip with nitrogen gas, place the observation under the microscope with chip PAD portion, PAD portion has obvious damage, proves there is the pressure welding damage.
Example 2:
putting the chip into concentrated sulfuric acid for heating, taking out the chip after the packaging material is corroded, cleaning the chip by using absolute ethyl alcohol, and finally cleaning the chip by using deionized water; put into the king water with the chip, fully dissolve PAD portion metal, take out the chip, put into the deionized water with the chip and wash 10 minutes, weather the chip with nitrogen gas, place the observation under the microscope with chip PAD portion, PAD portion does not have obvious damage.
The chip is placed into acid corrosive liquid of 60.8% nitric acid and 0.36% ammonium bifluoride to be soaked for 30 minutes, the chip is taken out, the chip is placed into deionized water to be washed for 10 minutes, the chip is dried by nitrogen, a PAD part of the chip is placed under a microscope to be observed, the PAD part has a corrosion pattern, and pressure welding damage is proved to exist.
Example 3:
putting the chip into concentrated sulfuric acid for heating, taking out the chip after the packaging material is corroded, cleaning the chip by using absolute ethyl alcohol, and finally cleaning the chip by using deionized water; put into the king water with the chip, fully dissolve PAD portion metal, take out the chip, put into the deionized water with the chip and wash 10 minutes, weather the chip with nitrogen gas, place the observation under the microscope with chip PAD portion, PAD portion does not have obvious damage.
The chip is placed into acid corrosive liquid of 60.8% nitric acid and 0.36% ammonium bifluoride to be soaked for 30 minutes, the chip is taken out, the chip is placed into deionized water to be washed for 10 minutes, the chip is dried by nitrogen, the PAD part of the chip is placed under a microscope to be observed, the PAD part has no corrosion pattern, and pressure welding damage is proved to be absent.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (8)
1. A method for simply detecting bonding damage is characterized by comprising the following steps:
(A) removing a chip packaging material, putting the chip into aqua regia, fully dissolving the metal of the PAD part, taking out the chip, putting the chip into deionized water for washing for 5-15 minutes, drying the chip by using clean gas with stable property, placing the PAD part of the chip under a microscope for observation, and continuing to execute the step (B) when the PAD surface is not obviously damaged;
(B) and (3) soaking the chip in an acid corrosion solution for 25-35 minutes, taking out the chip, washing the chip in deionized water for 5-15 minutes, drying the chip by using clean gas with stable properties, and observing the PAD part of the chip under a microscope.
2. The method of claim 1, wherein the chip packaging material is removed by chemical unsealing, mechanical unsealing, laser unsealing or Plasma unsealing.
3. The method for simply detecting the bonding damage according to claim 1 or 2, wherein the acid etching solution is a mixed acid aqueous solution of nitric acid and ammonium bifluoride.
4. The method for simply detecting bonding damage according to claim 3, wherein the percentage of nitric acid in the acid etching solution is 60.8%.
5. The method for simply detecting bonding damage according to claim 4, wherein the percentage of ammonium bifluoride in the acid etching solution is 0.36%.
6. The method for simply detecting bonding damage of claim 5, wherein the time for rinsing the chip in deionized water is 10 minutes.
7. A simple method of detecting bond damage as recited in claim 6 wherein the clean stable gas is nitrogen.
8. The method for simply detecting bonding damage of claim 7, wherein the chip is immersed in the acid etching solution for 30 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911130630.XA CN111103182A (en) | 2019-11-19 | 2019-11-19 | Method for simply detecting bonding damage |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911130630.XA CN111103182A (en) | 2019-11-19 | 2019-11-19 | Method for simply detecting bonding damage |
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| CN111103182A true CN111103182A (en) | 2020-05-05 |
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| CN201911130630.XA Pending CN111103182A (en) | 2019-11-19 | 2019-11-19 | Method for simply detecting bonding damage |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102359965A (en) * | 2011-07-05 | 2012-02-22 | 江苏捷捷微电子股份有限公司 | Process for detecting quality of copper ball bonding |
| CN104390911A (en) * | 2014-10-31 | 2015-03-04 | 山东华芯半导体有限公司 | Method for detecting welding strength of chip bonding wire |
| CN104658881A (en) * | 2013-11-21 | 2015-05-27 | 上海华虹宏力半导体制造有限公司 | Fast nondestructive full de-encapsulation method of contact-type IC card |
| CN104952749A (en) * | 2014-03-26 | 2015-09-30 | 中芯国际集成电路制造(上海)有限公司 | Welding pad defect detecting method |
| CN108987246A (en) * | 2017-05-31 | 2018-12-11 | 上海新微技术研发中心有限公司 | Method for removing chip packaging structure |
-
2019
- 2019-11-19 CN CN201911130630.XA patent/CN111103182A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102359965A (en) * | 2011-07-05 | 2012-02-22 | 江苏捷捷微电子股份有限公司 | Process for detecting quality of copper ball bonding |
| CN104658881A (en) * | 2013-11-21 | 2015-05-27 | 上海华虹宏力半导体制造有限公司 | Fast nondestructive full de-encapsulation method of contact-type IC card |
| CN104952749A (en) * | 2014-03-26 | 2015-09-30 | 中芯国际集成电路制造(上海)有限公司 | Welding pad defect detecting method |
| CN104390911A (en) * | 2014-10-31 | 2015-03-04 | 山东华芯半导体有限公司 | Method for detecting welding strength of chip bonding wire |
| CN108987246A (en) * | 2017-05-31 | 2018-12-11 | 上海新微技术研发中心有限公司 | Method for removing chip packaging structure |
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Application publication date: 20200505 |
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