CN111099555B - Manufacturing method of glass cavity suitable for wafer level vacuum packaging - Google Patents
Manufacturing method of glass cavity suitable for wafer level vacuum packaging Download PDFInfo
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- CN111099555B CN111099555B CN201911303875.8A CN201911303875A CN111099555B CN 111099555 B CN111099555 B CN 111099555B CN 201911303875 A CN201911303875 A CN 201911303875A CN 111099555 B CN111099555 B CN 111099555B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
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Abstract
The invention relates to a manufacturing method of a glass cavity body suitable for wafer level vacuum packaging, which is used for cleaning glass sheets once; etching the surface of the glass to form a first pattern; carrying out secondary cleaning on the glass sheet; depositing a metal tungsten film on the surface of the glass; forming a second pattern in the shallow groove formed by the first pattern in the second step; depositing a complex alloy film on the surface of the glass; coating photoresist on the composite gold film, and photoetching on the gold film to form a cavity pattern; protecting the edge of the gold-free surface and the gold-coated surface of the glass sheet by using a blue film; and aligning the silicon chip with the hollowed-out pattern with the glass sheet cavity according to the second pattern to form the glass sheet with the getter film in the cavity for wafer level vacuum packaging. The invention adopts the thick photoresist and the metal film to form the composite mask, can eliminate the defect of the surface of the single-layer mask and the influence of pinholes on corrosion, and reduces the surface undercut in the glass corrosion process.
Description
Technical Field
The invention belongs to the technical field of micro-mechanical electronic MEMS manufacturing, and relates to a glass cavity manufacturing method suitable for wafer level vacuum packaging.
Background
In the field of MEMS packaging, because MEMS devices are generally provided with movable components, the MEMS devices need to be sealed and packaged by using a cavity structure during packaging, so that the movable components have a movable space and play a physical protection role on the devices, and some MEMS devices such as resonators, gyroscopes and the like also need a vacuum airtight packaging environment. The silicon-glass anodic bonding process can provide very good air tightness and is a common bonding process for wafer level vacuum packaging. A deep cavity structure is formed on the bonding glass sheet, and a getter film for adsorbing redundant gas is manufactured on the surface of the cavity, so that wafer-level vacuum packaging of the MEMS device can be realized after the bonding glass sheet and the silicon substrate sheet with the movable component are subjected to anodic bonding.
How to manufacture a cavity with a certain depth on a glass sheet and with getter material is the key point for realizing MEMS wafer level vacuum packaging technology. The traditional method of wet etching technology is to select a single mask, and the back of the glass sheet cannot be well protected, so that serious undercutting phenomenon can occur in the etching process of the glass sheet, and a cavity with the depth of more than 50um is difficult to obtain. If DRIE is adopted, SF is utilized 6 The gas is used for cavity etching, the etching efficiency is low, and the depth cannot be accurately controlled. The method of softening glass after silicon dry etching and anodic bonding is used for manufacturing the glass deep cavity, and the method can obtain a pattern with the depth-to-width ratio of 20:1, but when the depth exceeds 100 mu m, the in-chip deviation is larger, and the production efficiency is low. The formation of getter film material inside the cavity is difficult to achieve in-cavity patterning to depths exceeding 50 μm by conventional photolithographic processes.
Disclosure of Invention
The invention solves the technical problems that: the method for manufacturing the glass cavity body suitable for wafer level vacuum packaging is provided, the depth is accurate and controllable, and batch production can be realized.
The solution of the invention is as follows:
a method of manufacturing a glass cavity suitable for wafer level vacuum packaging, the method comprising the steps of:
firstly, cleaning a glass sheet for the first time;
etching the surface of the glass to form a first pattern;
thirdly, performing secondary cleaning on the glass sheet;
fourthly, depositing a metal tungsten film on the surface of the glass;
fifthly, forming a second pattern in the shallow groove formed by the first pattern in the second step;
sixthly, depositing a complex alloy film on the surface of the glass;
seventh, coating photoresist on the composite gold film, and photoetching on the gold film to form a cavity pattern;
eighth, protecting the edge of the gold-free surface and the gold-coated surface of the glass sheet by using a blue film;
ninth, putting the protected glass sheet into a mixed solution of HF and water, wherein the corrosion rate is 0.5-1.3 mu m/min;
tenth, removing the blue film, removing the photoresist and the gold film, and forming a glass sheet cavity on the glass sheet;
eleventh step, forming hollowed-out patterns on the silicon wafer, wherein the hollowed-out patterns correspond to the positions of the cavities on the glass sheet;
and twelfth, aligning the silicon wafer with the hollowed-out pattern with the glass sheet cavity according to the second pattern, depositing a layer of getter film on the surface of the glass sheet cavity, and removing the silicon wafer to form the glass sheet with the getter film in the cavity for wafer level vacuum packaging.
Further, in the first step, the TEMPAX glass sheet or the Pyrex7740 glass sheet is washed by 110-130 ℃ in sequence with the volume ratio of 4: 1H 2 SO 4 And H 2 O 2 NH with the volume ratio of 1:1:5 at 75-85℃) 4 OH、H 2 O 2 And H 2 Mixing solution of O, 75-85 ℃ and HCl and H with volume ratio of 1:1:6 2 O 2 And H 2 And (5) cleaning the mixed solution of O.
Further, in the second step, the first pattern includes alignment areas of scribe lines and wafer edges, and the depth of the first pattern is 0.1 μm to 0.3 μm.
Further, in the third step, the glass sheet is washed with a volume ratio of 4 at 110-130 ℃ in sequence: 1H 2 SO 4 And H 2 O 2 NH with the volume ratio of 1:1:5 at 75-85℃) 4 OH、H 2 O 2 And H 2 Mixing solution of O, 75-85 ℃ and HCl and H with volume ratio of 1:1:6 2 O 2 And H 2 The mixed solution of O is cleaned, and then the glass sheet is put into a KOH solution with the concentration of 30-50% for 5-20min at the temperature of 60-80 ℃.
Further, in the fourth step, a thin film of metal tungsten having a thickness of 20nm to 80nm is deposited on the glass sheet on the side containing the first pattern by using a magnetron sputtering table.
Further, in the fifth step, a photolithography process is used, the thickness of the photoresist is larger than 5 μm, hydrogen peroxide is used for etching the tungsten film, and in the second step, a second pattern (104) is formed in the shallow groove formed by the first pattern in a photolithography manner.
Further, in the seventh step, photoresist with a thickness of more than 5 μm is coated on the composite gold film, and cavity patterns are formed on the composite gold film by using photolithography and dry etching processes, and the glass surface is exposed.
Further, in the eighth step, the adhesive force of not less than 1N/mm is used 2 The single-layer thickness of the blue film is 70-80 mu m, and the edges of the gold-free surface and the gold-containing surface of the glass sheet are bonded in an airtight manner.
Further, in the tenth step, the depth of the glass sheet cavity is 20 μm to 300. Mu.m.
Further, in the eleventh step, the processing technology of the hollowed-out pattern on the silicon wafer is at least one technology selected from a wet etching technology, a deep reactive ion etching technology, an ICP etching technology, a sand blasting technology and a laser technology.
Compared with the prior art, the invention has the beneficial effects that:
(1) The HF corrosion process of the traditional glass is isotropic, HF is easy to penetrate and corrode the glass below through defects or pinholes in a mask in the corrosion process, and the KOH solution is adopted to clean the glass sheet, so that the OH on the surface of the glass sheet can be increased - The adhesiveness of the metal film can be increased, and the transverse undercutting in the glass corrosion process can be reduced; the composite mask is formed by adopting the thick photoresist and the metal film, so that the defect of the surface of the single-layer mask and the influence of pinholes on corrosion can be eliminated, and the surface undercut in the glass corrosion process can be reduced;
(2) In the traditional glass corrosion process, a mechanical tool is generally adopted to protect the back surface, but the airtight protection cannot be realized, HF is often permeated to the back surface in the corrosion process, and the back surface is extremely easy to discard; the blue film is adopted to protect the edge and the back of the glass sheet, so that the air tightness protection can be realized, and the glass can be corroded for a long time;
(3) In order to solve the problem that the getter film in the glass cavity is difficult to form, the invention adopts a hard mask alignment mode, firstly utilizes a silicon micromachining process to manufacture a silicon wafer with hollowed-out patterns, then uses an alignment pattern which is manufactured in advance on the glass wafer to conduct hard mask alignment on the silicon wafer and the glass wafer with the cavity, deposits the getter film with a certain thickness on the surface of the wafer through a film deposition process, and can form the getter film with a specific pattern on the surface of the glass cavity after removing the silicon wafer.
Drawings
FIG. 1 is a schematic cross-sectional view of a glass sheet with alignment patterns made in accordance with the present invention;
FIG. 2 is a schematic cross-sectional view of a glass sheet with a cavity pattern and protected by a multi-layer mask and blue film in accordance with the present invention;
FIG. 3 is a schematic cross-sectional view of a glass wafer etched to a depth in accordance with the present invention;
FIG. 4 is a schematic cross-sectional view of a silicon wafer with hollowed-out patterns manufactured by the method;
FIG. 5 is a schematic cross-sectional view of a glass wafer with getter films in the chamber produced in accordance with the present invention;
wherein: 101-glass sheet, 102-glass surface, 103-first pattern, 104-second pattern, 105-photoresist, 106-gold film, 107-cavity pattern, 108-blue film, cavity-109, 110-getter film, 201-silicon wafer, 202-hollowed pattern.
Detailed Description
The invention is further illustrated below with reference to examples.
Firstly, sequentially using TEMPAX glass sheets at 110-130 ℃ in a volume ratio of 4: 1H 2 SO 4 And H 2 O 2 NH with the volume ratio of 1:1:5 at 75-85℃) 4 OH、H 2 O 2 And H 2 Mixing solution of O, 75-85 ℃ and HCl and H with volume ratio of 1:1:6 2 O 2 And H 2 And cleaning the mixed solution of O.
And secondly, patterning the glass surface by adopting a photoetching process, corroding shallow grooves with the depth of 0.2 mu m on the glass surface by using a normal-temperature BOE solution, and removing photoresist.
Thirdly, sequentially using the glass sheets with the volume ratio of 110-130 ℃ of 4: 1H 2 SO 4 And H 2 O 2 NH with the volume ratio of 1:1:5 at 75-85℃) 4 OH、H 2 O 2 And H 2 Mixing solution of O, 75-85 ℃ and HCl and H with volume ratio of 1:1:6 2 O 2 And H 2 The mixed solution of O is cleaned, and then the glass sheet is put into a KOH solution with the concentration of 33 percent at 80 ℃ for cleaning for 10 minutes, flushed and spin-dried.
And fourthly, depositing a metal tungsten film with the thickness of 40nm on the patterned surface of the glass sheet by utilizing a magnetron sputtering table.
And fifthly, patterning the shallow grooves in the second step by adopting a photoetching process, corroding tungsten by using hydrogen peroxide, and patterning a tungsten film into alignment patterns in the shallow grooves, as shown in fig. 1.
And sixthly, depositing a Ti/Au film with the thickness of 40nm/200nm on the patterned surface of the glass sheet by utilizing a magnetron sputtering table.
And seventh, coating 108cp photoresist on the metal surface of the glass sheet, wherein the thickness of the photoresist is more than 5 mu m, forming a cavity pattern on the Ti/Au film by using photoetching and dry etching processes, and exposing the surface of the glass.
Eighth, the edge of the glass sheet and the gold-free film surface were air-tightly bonded by using an SPV224 blue film, as shown in fig. 2.
Ninth, putting the protected glass sheet into a constant temperature of 25 ℃ and a constant temperature, wherein the volume ratio of the protected glass sheet is HF: h 2 The etching time was adjusted according to the etching depth in an etching solution of o=1:2, and the typical etching rate was 1 μm/min as shown in fig. 3.
And tenth, stripping off the blue film, removing the photoresist and the gold film, and forming a cavity on the glass sheet.
And eleventh step, cleaning the silicon wafer, depositing silicon oxide with the thickness of 0.5 mu m and silicon nitride with the thickness of 0.6 mu m on the two sides, and manufacturing a hollowed-out pattern on the silicon wafer by utilizing a photoetching process and a KOH corrosion process, wherein the hollowed-out pattern corresponds to the position of a cavity structure on the glass sheet as shown in fig. 4.
And twelfth, carrying out contact alignment on the silicon wafer with the hollowed-out pattern and the glass sheet with the cavity structure according to the alignment pattern on the glass sheet, depositing a layer of getter film on the surface of the wafer by utilizing a magnetron sputtering table, and after the silicon wafer is removed, storing the getter film on the inner surface of the cavity of the glass sheet, as shown in figure 5.
The invention has the advantages of simple process, accurate and controllable depth, low cost and high production efficiency, can be used for batch production, and can be widely applied to manufacturing of glass cavities in MEMS wafer level vacuum packaging.
Although the present invention has been described in terms of the preferred embodiments, it is not intended to be limited to the embodiments, and any person skilled in the art can make any possible variations and modifications to the technical solution of the present invention by using the methods and technical matters disclosed above without departing from the spirit and scope of the present invention, so any simple modifications, equivalent variations and modifications to the embodiments described above according to the technical matters of the present invention are within the scope of the technical matters of the present invention.
Claims (2)
1. A method for manufacturing a glass cavity suitable for wafer level vacuum packaging, the method comprising the steps of:
firstly, cleaning a glass sheet (101) for one time;
etching the glass surface (102) to form a first pattern (103);
thirdly, performing secondary cleaning on the glass sheet (101);
fourthly, depositing a metal tungsten film on the surface (102) of the glass;
fifthly, forming a second pattern (104) in the shallow groove formed by the first pattern (103) in the second step;
a sixth step of depositing a complex alloy film (106) on the glass surface (102);
seventh, coating photoresist (105) on the composite gold film (106), and photoetching on the gold film (106) to form a cavity pattern (107);
eighth, protecting the edge of the gold-free surface and the gold-coated surface of the glass sheet by using a blue film (108);
ninth, putting the protected glass sheet into a mixed solution of HF and water, wherein the corrosion rate is 0.5-1.3 mu m/min;
tenth, removing the blue film (108), removing the photoresist (105) and the gold film (106), and forming a cavity (109) of the glass sheet on the glass sheet;
eleventh, forming a hollowed-out pattern (202) on the silicon wafer (201), wherein the hollowed-out pattern (202) corresponds to the position of the cavity (109) on the glass sheet;
twelfth, aligning the silicon wafer (201) with the hollowed-out pattern (202) with the glass sheet (101) with the glass sheet cavity (109) according to the second pattern (104), depositing a layer of getter film (110) on the surface of the glass sheet cavity (109), and removing the silicon wafer (201) to form the glass sheet (101) with the getter film (110) in the cavity for wafer level vacuum packaging;
in the second step, the first pattern (103) comprises an alignment area of a scribing channel and the edge of a wafer, and the depth of the first pattern (103) is 0.1-0.3 mu m;
the second cleaning in the third step is that the glass sheet (101) is sequentially cleaned by a volume ratio of between 110 and 130 ℃ of 4: 1H 2 SO 4 And H 2 O 2 NH with the volume ratio of 1:1:5 at 75-85℃) 4 OH、H 2 O 2 And H 2 Mixing solution of O, 75-85 ℃ and HCl and H with volume ratio of 1:1:6 2 O 2 And H 2 Cleaning the mixed solution of O, and then placing the glass sheet into a KOH solution with the concentration of 30-50% at 60-80 ℃ for 5-20min;
in the eighth step, the adhesive force is not less than 1N/mm 2 The blue film (108) with the single-layer thickness of 70-80 mu m is adopted, and the edges of the gold film-free surface and the gold film-containing surface of the glass sheet are bonded in an airtight manner;
the first step of cleaning comprises the steps of sequentially using a TEMPAX glass sheet or a Pyrex7740 glass sheet at 110-130 ℃ with the volume ratio of 4: 1H 2 SO 4 And H 2 O 2 NH with the volume ratio of 1:1:5 at 75-85℃) 4 OH、H 2 O 2 And H 2 Mixing solution of O, 75-85 ℃ and HCl and H with volume ratio of 1:1:6 2 O 2 And H 2 Cleaning the mixed solution of O;
a fourth step of depositing a metal tungsten film with a thickness of 20nm-80nm on the glass sheet on the side containing the first pattern (103) by using a magnetron sputtering table;
a fifth step of adopting a photoetching process, wherein the thickness of the photoresist is larger than 5 mu m, corroding the tungsten film by hydrogen peroxide, and photoetching a second pattern (104) in a shallow groove formed by the first pattern (103) in the second step;
in the seventh step, photoresist with the thickness larger than 5 mu m is coated on the composite gold film (106), cavity patterns are formed on the composite gold film (106) by utilizing photoetching and dry etching processes, and the glass surface (102) is exposed;
in the tenth step, the depth of the glass sheet cavity (109) is 20 μm to 300. Mu.m.
2. The method for manufacturing the glass cavity suitable for wafer level vacuum packaging according to claim 1, wherein the method comprises the following steps: in the eleventh step, the processing technology of the hollowed-out pattern (202) on the silicon wafer is at least one technology selected from a wet etching technology, a deep reactive ion etching technology, an ICP etching technology, a sand blasting technology and a laser technology.
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| US5851366A (en) * | 1994-07-19 | 1998-12-22 | Corning Incorporated | Adhering metal to glass |
| JP2002163821A (en) * | 2000-11-22 | 2002-06-07 | Hitachi Ltd | Method of manufacturing magnetic recording medium |
| JP2002338306A (en) * | 2001-05-14 | 2002-11-27 | Tohpe Corp | Method for making glass hydrophilic, hydrophilic glass, producing method thereof and hydrophilic glass product |
| JP3731750B2 (en) * | 2002-06-24 | 2006-01-05 | 松下電器産業株式会社 | Infrared sensor manufacturing method |
| CN102344110B (en) * | 2011-10-31 | 2015-07-15 | 嘉盛半导体(苏州)有限公司 | Quad flat non-leaded package structure and method of micro electro mechanical system device |
| JP2014235115A (en) * | 2013-06-04 | 2014-12-15 | ウシオ電機株式会社 | Microchip and method for forming metal thin film in microchip |
| CN104576482A (en) * | 2013-10-17 | 2015-04-29 | 上海华虹宏力半导体制造有限公司 | Wafer alignment method |
| CN108878596B (en) * | 2018-05-29 | 2020-12-15 | 河源市众拓光电科技有限公司 | Edge-lossless transfer method for LED chip substrate with vertical structure |
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|---|---|---|---|---|
| CN101108722A (en) * | 2007-09-05 | 2008-01-23 | 北京大学 | Wafer level vacuum encapsulation of microelectron mechanical system and upside-down mounting soldering method thereof |
| CN101759138A (en) * | 2010-01-22 | 2010-06-30 | 东南大学 | Positive pressure thermoforming manufacturing method of wafer-level glass micro-channel |
| CN107963607A (en) * | 2017-10-30 | 2018-04-27 | 罕王微电子（辽宁）有限公司 | A kind of all standing getter wafer scale electronic component and its method for packing |
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