CN111498797A - Manufacturing method of wafer-level glass cavity - Google Patents
Manufacturing method of wafer-level glass cavity Download PDFInfo
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- CN111498797A CN111498797A CN202010247268.0A CN202010247268A CN111498797A CN 111498797 A CN111498797 A CN 111498797A CN 202010247268 A CN202010247268 A CN 202010247268A CN 111498797 A CN111498797 A CN 111498797A
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- 239000011521 glass Substances 0.000 title claims abstract description 116
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 55
- 239000010931 gold Substances 0.000 claims abstract description 35
- 229910052737 gold Inorganic materials 0.000 claims abstract description 23
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000005530 etching Methods 0.000 claims abstract description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 17
- 238000004140 cleaning Methods 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 238000001259 photo etching Methods 0.000 claims abstract description 13
- 239000002131 composite material Substances 0.000 claims abstract description 11
- 239000011259 mixed solution Substances 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000012670 alkaline solution Substances 0.000 claims abstract description 4
- 239000002245 particle Substances 0.000 claims abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims abstract description 4
- 239000000243 solution Substances 0.000 claims description 17
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000003513 alkali Substances 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 40
- 238000004806 packaging method and process Methods 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 7
- 238000001035 drying Methods 0.000 description 6
- 238000011010 flushing procedure Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000010923 batch production Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
- B81C1/00785—Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00047—Cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
- B81C1/00396—Mask characterised by its composition, e.g. multilayer masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00539—Wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00595—Control etch selectivity
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
The invention relates to a manufacturing method of a wafer-level glass cavity, which comprises the following steps: cleaning the glass sheet to remove organic matters and particles on the surface of the glass; the glass sheet is continuously cleaned by adopting a strong alkaline solution, so that the OH-concentration on the surface of the glass sheet is increased, and the adhesion of a metal film is improved; sputtering a composite gold film on one surface of the glass sheet by using a metal film process; photoetching the gold film by utilizing photoetching and etching processes in sequence, and forming a specific pattern; protecting the edge and the gold-free film surface of the glass sheet by adopting a blue film; putting the protected glass sheet into a mixed solution of HF and water, and corroding to a certain preset depth; and removing the blue film, removing the photoresist and the composite gold film, and forming a cavity on the glass sheet.
Description
Technical Field
The invention belongs to the manufacturing technology of micro-mechanical electronic MEMS, and particularly relates to a manufacturing method of a wafer-level glass cavity.
Background
In the field of MEMS manufacturing technology, bonding glass (a glass containing alkali ions, including Pyrex7740 and TEMPAX) is an important material, and due to its thermal expansion coefficient close to that of silicon, it can form a high-strength bonding connection with a silicon substrate by using anodic bonding process, and the Si — O covalent bond formed on the bonding surface is even stronger than the silicon material itself, so that the bonding glass shape is widely used in the fields of MEMS devices, MEMS packaging, microfluids, MOEMS, and the like.
In the field of MEMS packaging, as MEMS devices are generally provided with movable parts, a cavity structure is required to be used for sealing and packaging the devices during packaging, so that the movable parts have movable spaces and play a physical protection role in the devices. A deep cavity structure is formed on a glass sheet for bonding, and then anodic bonding is carried out on the glass sheet and a silicon substrate sheet with a movable component, so that wafer-level packaging of the MEMS device can be realized. Therefore, how to manufacture a cavity with a certain depth on a glass sheet is the key point for realizing the packaging process. In the wet etching process, a single type of mask is selected in the traditional method, and the back surface of a glass sheet cannot be well protected, so that the glass sheet can generate a serious undercutting phenomenon in the etching process, and a cavity with the depth of more than 50um is difficult to obtain. If the chamber etching is performed by using the DRIE method using SF6 gas, the etching efficiency is low and the depth cannot be precisely controlled. The invention patent application of the manufacturing method of the wafer-level glass micro-cavity (application number 200810023417.4) and the invention patent application of the manufacturing method of the MEMS packaging glass micro-cavity with the optical window (application number 200910185356.6) provides the method of using silicon dry etching and anode bonding to soften glass for manufacturing the glass deep cavity, although the method can obtain the pattern with the depth-to-width ratio of 20:1, when the depth exceeds 100 mu m, the deviation in the chip is large, and the production efficiency is low.
Disclosure of Invention
The technical problem solved by the invention is as follows: the manufacturing method of the wafer-level glass cavity overcomes the problems in the prior art, is simple in process, accurate and controllable in depth, low in cost, high in production efficiency and capable of achieving batch production.
The technical scheme of the invention is as follows: a method of manufacturing a wafer level glass chamber, the method comprising the steps of:
firstly, cleaning a glass sheet to remove organic matters and particles on the surface of the glass;
secondly, continuously cleaning the glass sheet by adopting a strong alkali solution, increasing the OH-concentration on the surface of the glass sheet, and improving the adhesion of the metal film;
thirdly, sputtering a composite gold film on one surface of the glass sheet by using a metal film process;
fourthly, photoetching and etching processes are sequentially utilized to carry out photoetching on the gold film, and a specific pattern (4) is formed;
fifthly, protecting the edge and the gold-free film surface of the glass sheet by adopting a blue film;
sixthly, putting the protected glass sheet into a mixed solution of HF and water, and corroding the glass sheet to a certain preset depth;
and seventhly, removing the blue film, removing the photoresist and the composite gold film, and forming a cavity on the glass sheet.
The glass sheet is TEMPAX glass or Pyrex7740 glass.
The process conditions of the strong alkali solution for cleaning the glass sheet in the second step are as follows: KOH or NaOH, at a temperature of 50 ℃ to 80 ℃, at a concentration of 20% to 40%, for a washing time of 5min to 20 min.
In the third step, the material of the composite gold film is Ti-Au or Cr-Au, wherein the thickness of Ti or Cr is 20nm to 80nm, and the thickness of Au is 100nm to 1 μm.
The photoetching process in the fourth step has the following process conditions: the photoresist thickness is 2 μm to 15 μm.
The etching process in the fourth step is a wet etching process or a dry etching process.
The thickness of the blue film in the fifth step is 70 μm to 100 μm, and the adhesive force is not less than 1N/mm2。
The mixed solution of HF and water in the sixth step is: constant temperature at 25 ℃ consisting of HF: h2And O is corrosive liquid consisting of 1:2, and stirring.
The depth of the glass cavity formed in the seventh step can reach 50-300 μm.
Compared with the prior art, the invention has the beneficial effects that:
1. the HF etching process for glass is isotropic, and HF is very likely to penetrate through defects or pinholes in the mask to etch the underlying glass during etching. The invention adopts strong alkaline solution to clean the glass sheet, can increase OH < - > on the surface of the glass sheet, can increase the adhesion of a metal film, and can reduce the transverse underetching in the glass corrosion process. The composite mask is formed by the thick photoresist and the metal film, so that the defects and pinholes on the surface of the mask can be reduced, and the surface undercutting in the glass corrosion process is eliminated.
2. In the traditional glass corrosion process, a mechanical tool is generally adopted to protect the back, but the air tightness protection cannot be realized, and HF often permeates into the back in the corrosion process, so that the back is very easy to scrap. The blue film is a common material for packaging, has certain viscosity and ductility, can be in airtight fit with a glass sheet, is resistant to HF corrosion, and is low in price. The blue film is adopted to protect the edge and the back of the glass sheet, so that the air tightness protection can be realized, and the glass can be corroded for a long time.
3. The invention adopts the conventional MEMS processing technology to process on the glass wafer, has simple and reliable technological process and low cost, and can realize the batch production of wafer-level glass cavities.
4. The invention can prepare the glass cavity with accurately controllable depth by adjusting the concentration, temperature and corrosion time of the corrosive liquid, and can be applied to wafer level packaging.
Drawings
FIG. 1 is a schematic cross-sectional view of a wafer with a specific pattern protected by a multi-layer mask and a blue film according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a glass wafer etched to a depth in accordance with an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of a glass wafer for forming a chamber according to an embodiment of the present invention.
Detailed Description
One implementation of the present invention is further described below with reference to the accompanying drawings.
As shown in fig. 1, the present invention provides a method of manufacturing a wafer level glass chamber, the method comprising the steps of:
firstly, cleaning a glass sheet 1 to remove organic matters and particles on the surface of glass; the glass sheet is TEMPAX glass or Pyrex7740 glass.
Secondly, continuously cleaning the glass sheet 1 by adopting a strong alkaline solution, increasing the OH-concentration on the surface of the glass sheet and improving the adhesion of the metal film; the process conditions for cleaning the glass sheet by the strong alkali solution are as follows: the strong alkali solution is KOH or NaOH solution, the temperature is 50-80 ℃, the concentration is 20-40%, and the cleaning time is 5-20 min.
Thirdly, sputtering a composite gold film 2 on one surface of the glass sheet by using a metal film process; the composite gold film is made of Ti-Au or Cr-Au, wherein the thickness of Ti or Cr is 20nm to 80nm, and the thickness of Au is 100nm to 1 μm.
Fourthly, photoetching and etching processes are sequentially utilized to carry out photoetching on the gold film, and a specific pattern 4 is formed;
the process conditions of the photoetching process are as follows: the photoresist thickness is 2 μm to 15 μm.
The etching process is a wet etching process or a dry etching process.
Fifthly, protecting the edge and the gold-free film surface of the glass sheet by adopting a blue film 5;
the blue film has a thickness of 70 μm to 100 μm and an adhesive force of not less than 1N/mm2。
Sixthly, putting the protected glass sheet into a mixed solution of HF and water, and corroding the glass sheet to a certain preset depth;
the mixed solution of HF and water was: constant temperature at 25 ℃ consisting of HF: h2And O is corrosive liquid consisting of 1:2, and stirring.
And seventhly, removing the blue film 5, removing the photoresist 3 and the composite gold film 2, and forming a cavity 6 on the glass sheet. The depth of the glass cavity formed in the step can reach 50-300 mu m.
Example 1
Firstly, sequentially using No. 3 liquid (H) with the temperature of 120 ℃ on Pyrex7740 glass sheets2SO4：H2O2Cleaning at 4:1 for 20min, 80 deg.C 1# (NH)4OH：H2O2：H2O ═ 1:1:5) for 20min, 80 ℃ 2# solution (HCl: h2O2：H2O1: 1:6) for 20min, flushing and spin-drying.
And secondly, putting the glass sheet into a KOH solution with the temperature of 60 ℃ and the concentration of 20 percent again, cleaning for 10min, flushing and spin-drying.
And thirdly, depositing a Cr/Au film with the thickness of 40nm/200nm on one surface of the glass sheet by using a magnetron sputtering platform.
And fourthly, coating i7010 photoresist on the metal surface of the glass sheet, wherein the thickness of the photoresist is 2 mu m, forming a specific pattern on the Cr/Au thin film by utilizing photoetching and dry etching processes in sequence, and exposing the surface of the glass.
In the fifth step, an SPV225 blue film (thickness 80 μm) was used. And (5) carrying out air-tight joint on the edge of the glass sheet and the surface without the gold film.
And sixthly, putting the protected glass sheet into a glass tube at the constant temperature of 25 ℃ and the volume ratio of HF: h2And (3) stirring and corroding in a corrosive solution consisting of 1: 2O for 50min at a corrosion rate of about 1 mu m/min.
And seventhly, removing the blue film, removing the photoresist and the gold film, and forming a cavity with the depth of about 50 microns on the glass sheet, wherein the deviation in the glass sheet is less than 2 microns.
Example 2
Firstly, the TEMPAX glass sheet is applied with 120 ℃ 3# solution (H)2SO4：H2O2Cleaning at 4:1 for 20min, 80 deg.C 1# (NH)4OH：H2O2：H2O ═ 1:1:5) for 20min, 80 ℃ 2# solution (HCl: h2O2：H2O1: 1:6) for 20min, flushing and spin-drying.
And secondly, putting the glass sheet into a KOH solution with the temperature of 80 ℃ and the concentration of 40 percent again, cleaning for 20min, flushing and spin-drying.
And thirdly, depositing a Ti/Au film with the thickness of 40nm/400nm on one surface of the glass sheet by using a magnetron sputtering platform.
And fourthly, coating 108cp photoresist on the metal surface of the glass sheet, wherein the photoresist is 5 mu m thick, and forming a specific pattern on the Ti/Au thin film by utilizing photoetching and dry etching processes, and exposing the surface of the glass.
Fifth, an SPV224 blue film (thickness 80 μm, adhesive force 1.10N/mm) was used2) And (5) carrying out air-tight joint on the edge of the glass sheet and the surface without the gold film.
In the sixth step, the first step is carried out,and (3) putting the protected glass sheet into a constant temperature chamber at 25 ℃ and a heating chamber with the volume ratio of HF: h2And (3) adding O to an etching solution consisting of 1:2, stirring, and etching for 200min at the etching rate of about 1 mu m/min.
And seventhly, removing the blue film, removing the photoresist and the gold film, and forming a cavity with the depth of about 200 mu m on the glass sheet, wherein the deviation in the glass sheet is less than 5 mu m.
Example 3
Firstly, the TEMPAX glass sheet is applied with 120 ℃ 3# solution (H)2SO4：H2O2Cleaning at 4:1 for 20min, 80 deg.C 1# (NH)4OH：H2O2：H2O ═ 1:1:5) for 20min, 80 ℃ 2# solution (HCl: h2O2：H2O1: 1:6) for 20min, flushing and spin-drying.
And secondly, putting the glass sheet into a KOH solution with the temperature of 80 ℃ and the concentration of 40 percent again, cleaning for 20min, flushing and spin-drying.
And thirdly, depositing a Ti/Au film with the thickness of 40nm/800nm on one surface of the glass sheet by using a magnetron sputtering platform.
And fourthly, coating AZ4620 photoresist on the metal surface of the glass sheet, wherein the photoresist is 10 mu m thick, and forming a specific pattern on the Ti/Au thin film by utilizing photoetching and wet etching processes, and exposing the surface of the glass.
Fifth, an SPV224 blue film (thickness 80 μm, adhesive force 1.10N/mm) was used2) And (5) carrying out air-tight joint on the edge of the glass sheet and the surface without the gold film.
And sixthly, putting the protected glass sheet into a glass tube at the constant temperature of 25 ℃ and the volume ratio of HF: h2And (3) adding O to an etching solution with the ratio of 1:2, stirring, and etching for 300min at the etching rate of about 1 mu m/min. As shown in fig. 2.
And seventhly, removing the blue film, removing the photoresist and the gold film, and forming a cavity with the depth of about 300 microns on the glass sheet, wherein the deviation in the glass sheet is less than 10 microns. As shown in fig. 3.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (9)
1. A method for manufacturing a wafer-level glass cavity is characterized by comprising the following steps:
firstly, cleaning a glass sheet (1) to remove organic matters and particles on the surface of the glass;
secondly, continuously cleaning the glass sheet (1) by adopting a strong alkaline solution, increasing the OH-concentration on the surface of the glass sheet and improving the adhesion of the metal film;
thirdly, sputtering a composite gold film (2) on one surface of the glass sheet by using a metal film process;
fourthly, photoetching and etching processes are sequentially utilized to carry out photoetching on the gold film, and a specific pattern (4) is formed;
fifthly, protecting the edge of the glass sheet and the gold-free film surface by adopting a blue film (5);
sixthly, putting the protected glass sheet into a mixed solution of HF and water, and corroding the glass sheet to a certain preset depth;
and seventhly, removing the blue film (5), removing the photoresist (3) and the composite gold film (2), and forming a cavity (6) on the glass sheet.
2. The method of claim 1, wherein the glass sheet is a TEMPAX glass or a Pyrex7740 glass.
3. The method of claim 1, wherein the process conditions for the strong alkali solution to wash the glass sheet in the second step are as follows: KOH or NaOH, at a temperature of 50 ℃ to 80 ℃, at a concentration of 20% to 40%, for a washing time of 5min to 20 min.
4. The method as claimed in claim 1, wherein the material of the gold-clad film in the third step is Ti-Au or Cr-Au, wherein the thickness of Ti or Cr is 20nm to 80nm, and the thickness of Au is 100nm to 1 μm.
5. The method of claim 1, wherein the photolithography process in the fourth step comprises the following process conditions: the photoresist thickness is 2 μm to 15 μm.
6. The method for manufacturing a wafer level glass cavity according to claim 1, wherein the etching process in the fourth step is a wet etching process or a dry etching process.
7. The method of claim 1, wherein the thickness of the blue film in the fifth step is 70 μm to 100 μm, and the adhesive force is not less than 1N/mm2。
8. The method for manufacturing a wafer level glass chamber according to claim 1, wherein the mixed solution of HF and water in the sixth step is: constant temperature at 25 ℃ consisting of HF: h2And O is corrosive liquid consisting of 1:2, and stirring.
9. The method of claim 1, wherein the glass cavity formed in the seventh step has a depth of 50 μm to 300 μm.
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