CN111092604B - 一种体声波谐振器的空腔结构及制造方法 - Google Patents
一种体声波谐振器的空腔结构及制造方法 Download PDFInfo
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- CN111092604B CN111092604B CN201911294647.9A CN201911294647A CN111092604B CN 111092604 B CN111092604 B CN 111092604B CN 201911294647 A CN201911294647 A CN 201911294647A CN 111092604 B CN111092604 B CN 111092604B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
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CN111934639B (zh) * | 2020-06-28 | 2021-10-29 | 见闻录(浙江)半导体有限公司 | 一种体声波谐振器的空腔结构及制作工艺 |
CN113346864B (zh) * | 2021-05-28 | 2022-01-04 | 杭州星阖科技有限公司 | 一种体声波谐振器及其制作方法 |
CN114674485A (zh) * | 2022-02-21 | 2022-06-28 | 华中科技大学 | 小量程mems电容式压力传感器及其制备方法 |
CN115694401B (zh) * | 2022-08-24 | 2024-01-26 | 武汉敏声新技术有限公司 | 一种谐振器及其制备方法 |
CN116633309B (zh) * | 2023-05-25 | 2024-03-19 | 武汉敏声新技术有限公司 | 一种体声波谐振器及其制备方法 |
CN116707479B (zh) * | 2023-08-01 | 2024-04-02 | 深圳新声半导体有限公司 | 用于释放型体声波滤波器的监控结构、滤波器 |
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CN102025340B (zh) * | 2010-10-21 | 2013-05-08 | 张�浩 | 声波谐振器及其加工方法 |
US9484216B1 (en) * | 2015-06-02 | 2016-11-01 | Sandia Corporation | Methods for dry etching semiconductor devices |
CN105262455B (zh) * | 2015-10-09 | 2018-07-31 | 锐迪科微电子(上海)有限公司 | 一种高可靠性的薄膜体声波谐振器及其制造方法 |
CN109474252B (zh) * | 2018-10-29 | 2020-12-01 | 武汉大学 | 可提高q值的空腔薄膜体声波谐振器及其制备方法 |
CN109802649B (zh) * | 2018-12-29 | 2023-04-11 | 开元通信技术(厦门)有限公司 | 一种监控空气隙型体声波谐振器空腔释放过程的方法 |
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Address after: 1219-23, building 3, No. 1366, Hongfeng Road, Kangshan street, Huzhou City, Zhejiang Province, 313000 Applicant after: Jianwenlu (Zhejiang) Semiconductor Co.,Ltd. Address before: 310019 room 1004, 10th floor, building 4, No. 9, Jiuhuan Road, Jianggan District, Hangzhou City, Zhejiang Province Applicant before: Hangzhou Wenwenlu Technology Co.,Ltd. |
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Denomination of invention: Cavity structure and manufacturing method of bulk acoustic wave resonator Effective date of registration: 20220309 Granted publication date: 20210720 Pledgee: Huzhou Wuxing Rural Commercial Bank Co.,Ltd. Pledgor: Jianwenlu (Zhejiang) Semiconductor Co.,Ltd. Registration number: Y2022330000319 |