CN111082403B

CN111082403B - Integrated laminated busbar structure suitable for diode bridge

Info

Publication number: CN111082403B
Application number: CN202010021356.9A
Authority: CN
Inventors: 齐磊; 陈熙琳; 渠鑫源; 刘珂鑫; 东野忠昊
Original assignee: North China Electric Power University
Current assignee: North China Electric Power University
Priority date: 2020-01-09
Filing date: 2020-01-09
Publication date: 2021-01-08
Anticipated expiration: 2040-01-09
Also published as: CN111082403A

Abstract

The invention discloses an integrated laminated busbar structure suitable for a diode bridge. The integrated laminated busbar structure comprises an IGBT press mounting structure, a diode press mounting structure, a capacitor bank and a laminated busbar group; the IGBT press-fitting structure is used for press-connecting 2 parallel IGBTs at one time; the diode press-mounting structure is used for pressing and connecting 4 diodes at one time; the capacitor bank consists of 2 series capacitors and an insulating support plate; the laminated busbar group comprises a No. 1 laminated busbar and a No. 2 laminated busbar. The integrated laminated busbar structure provided by the invention has small stray inductance and a simple structure, and only comprises two laminated busbars, so that the installation steps are simplified, and the stray inductance of a diode bridge is reduced.

Description

Integrated laminated busbar structure suitable for diode bridge

Technical Field

The invention relates to the technical field of power electronics, in particular to an integrated laminated busbar structure suitable for a diode bridge.

Background

The breaker is a core component for breaking short-circuit current in the flexible direct-current transmission system and is formed by connecting 3 branches including a transfer branch, a main branch and an energy absorption branch in parallel. The transfer branch is formed by connecting a plurality of stages of diode bridge modules in series and is used for bearing and breaking the fault current of the direct current system in a short time. When the circuit breaker receives a system breaking signal or reaches an overcurrent protection threshold value, a main branch of the circuit breaker is locked, a capacitor of the main branch generates a voltage difference, and current is forced to be converted to a transfer branch. After the current of the main branch circuit is completely converted to the transfer branch circuit, the quick mechanical switch is switched off, then the transfer branch circuit is locked, and the current charges a capacitor of the transfer branch circuit, so that the voltage at two ends of the circuit breaker is rapidly increased. And after the breaking voltage reaches the action level of the lightning arrester, the fault current is transferred to the lightning arrester, and the lightning arrester absorbs the system fault current until the current crosses zero.

At present, the laminated busbar structure of the diode bridge is segmented and split, and an integral structure is not formed. The existing busbar structure is complex, the number of structural members is large, and the problems of inconvenient installation and large stray inductance are caused.

Disclosure of Invention

The invention aims to provide an integrated laminated busbar structure suitable for a diode bridge, and aims to solve the problems that the existing laminated busbar structure is inconvenient to install and large in stray inductance due to the fact that the number of structural components is large.

In order to achieve the purpose, the invention provides the following scheme:

an integrated laminated busbar structure suitable for a diode bridge, the integrated laminated busbar structure comprising: the device comprises an IGBT press-mounting structure, a diode press-mounting structure, a capacitor bank and a laminated busbar bank;

the IGBT press-mounting structure is used for press-connecting 2 parallel IGBTs at one time, and the 2 parallel IGBTs are horizontally distributed; the 2 parallel IGBTs comprise a No. 1 IGBT and a No. 2 IGBT; the diode press-mounting structure is used for pressing and connecting 4 diodes at one time; the 4 diodes include a D1 diode, a D2 diode, a D3 diode, and a D4 diode; wherein the D1 diode and the D2 diode are in one group, the D3 diode and the D4 diode are in one group, forming two groups of diodes; the two diodes in the same group are arranged in the same direction; the two groups of diodes are distributed in a mirror image manner; the capacitor bank consists of 2 series capacitors and an insulating support plate; the 2 series capacitors comprise a No. 1 cylindrical capacitor and a No. 2 cylindrical capacitor; the laminated busbar group comprises a No. 1 laminated busbar and a No. 2 laminated busbar;

the C pole of the IGBT No. 1 and the C pole of the IGBT No. 2 are connected with the cathode of the D1 diode and the cathode of the D3 diode through the laminated busbar No. 2; the E pole of the IGBT No. 1 and the E pole of the IGBT No. 2 are connected with the anode of the D2 diode and the anode of the D4 diode through the laminated busbar No. 1; one end of the No. 1 cylindrical capacitor is connected with the cathode of the D1 diode and the cathode of the D3 diode through the No. 2 laminated busbar; one end of the No. 2 cylindrical capacitor is connected with the anode of the D2 diode and the anode of the D4 diode through the No. 1 laminated busbar; the other end of No. 1 cylinder capacitor passes through the insulating supporting plate with the other end of No. 2 cylinder capacitor is connected.

Optionally, the IGBT press-fitting structure includes a No. 1 IGBT, a No. 2 IGBT, a No. 3 crimping metal block, and a No. 4 crimping metal block; the C pole of the No. 1 IGBT and the C pole of the No. 2 IGBT are connected through the No. 4 crimping metal block; and the E pole of the No. 1 IGBT and the E pole of the No. 2 IGBT are connected through the No. 3 crimping metal block.

Optionally, the diode press-mounting structure includes a D1 diode, a D2 diode, a D3 diode, a D4 diode, a No. 1 crimping metal block, a No. 2 crimping metal block, a No. 5 crimping metal block, and a No. 6 crimping metal block; the anode of the D1 diode and the cathode of the D2 diode are respectively and electrically connected with the No. 5 crimping metal block; the anode of the D3 diode and the cathode of the D4 diode are respectively and electrically connected with the No. 6 crimping metal block; the cathode of the D1 diode and the cathode of the D3 diode are connected through the No. 1 crimping metal block; the anode of the D2 diode and the anode of the D4 diode are connected through the No. 2 crimped metal block.

Optionally, the No. 1 laminated busbar includes an E-pole connection end, a No. 1 connection plate, and a No. 2 cylindrical capacitor connection end; the fixed end of the E-pole connecting end is connected with one end of the No. 1 connecting plate; the fixed end of the No. 2 cylindrical capacitor connecting end is connected with the other end of the No. 1 connecting plate; the E-pole connecting end is parallel to the connecting end of the No. 2 cylindrical capacitor; the protruding direction of the protruding end of the E-pole connecting end is opposite to that of the protruding end of the No. 2 cylindrical capacitor connecting end;

the E pole connecting end of the No. 1 laminated busbar is connected with the No. 3 crimping metal block; and the connecting end of the No. 2 cylindrical capacitor is connected with one end of the No. 2 cylindrical capacitor.

Optionally, the No. 1 connecting plate is provided with a No. 1 opening; and the cathode of the D1 diode is electrically connected with the No. 2 laminated busbar through the No. 1 opening.

Optionally, the No. 2 laminated busbar includes a C-pole connection end, a No. 2 connection plate, and a No. 1 cylindrical capacitor connection end; the fixed end of the C-pole connecting end is connected with one end of the No. 2 connecting plate; the fixed end of the No. 1 cylindrical capacitor connecting end is connected with the other end of the No. 2 connecting plate; the C-pole connecting end is parallel to the connecting end of the No. 1 cylindrical capacitor; the protruding direction of the protruding end of the C-pole connecting end is the same as that of the protruding end of the No. 1 cylindrical capacitor connecting end;

the C-pole connecting end of the No. 2 laminated busbar is connected with the No. 4 crimping metal block; and the connecting end of the No. 1 cylindrical capacitor is connected with one end of the No. 1 cylindrical capacitor.

Optionally, the No. 2 connecting plate is provided with a No. 2 opening; and the anode of the D4 diode is electrically connected with the laminated busbar No. 1 through the opening No. 2.

Optionally, the laminated busbar set further includes: an insulating plate; the insulating plate is clamped between the No. 1 laminated busbar and the No. 2 laminated busbar.

Optionally, the insulating plate includes an insulating connecting plate and a No. 1 cylindrical capacitor connecting plate; the No. 1 cylindrical capacitor connecting plate is arranged at one end, close to the capacitor bank, of the insulating connecting plate; the No. 1 cylindrical capacitor connecting plate is vertical to the insulating connecting plate; and the No. 1 cylindrical capacitor connecting end is connected with one end of the No. 1 cylindrical capacitor through the No. 1 cylindrical capacitor connecting plate.

Optionally, the insulating connecting plate is provided with a first concave hole and a second concave hole which are arranged in opposite directions; the first concave hole is used for electrically connecting the cathode of the D1 diode with the No. 2 laminated busbar; the peripheral protrusion of the first concave hole is used for insulating the D1 diode from the No. 1 laminated busbar; the second concave hole is used for electrically connecting the anode of the D4 diode with the laminated busbar No. 1; and the peripheral protrusion of the second concave hole is used for insulating the D4 diode from the No. 2 laminated busbar.

According to the specific embodiment provided by the invention, the invention discloses the following technical effects:

the invention provides an integrated laminated busbar structure suitable for a diode bridge, which comprises: the device comprises an IGBT press-mounting structure, a diode press-mounting structure, a capacitor bank and a laminated busbar bank; the IGBT press-fitting structure is used for press-connecting 2 parallel IGBTs at one time; the diode press-mounting structure is used for pressing and connecting 4 diodes at one time; the capacitor bank consists of 2 series capacitors and an insulating support plate; the laminated busbar group comprises a No. 1 laminated busbar and a No. 2 laminated busbar; the C pole of the No. 1 IGBT and the C pole of the No. 2 IGBT are connected with the cathode of the D1 diode and the cathode of the D3 diode through the No. 2 laminated busbar; the E pole of the No. 1 IGBT and the E pole of the No. 2 IGBT are connected with the anode of the D2 diode and the anode of the D4 diode through the No. 1 laminated busbar; one end of the No. 1 cylindrical capacitor is connected with the cathode of the D1 diode and the cathode of the D3 diode through the No. 2 laminated busbar; one end of the No. 2 cylindrical capacitor is connected with the anode of the D2 diode and the anode of the D4 diode through the No. 1 laminated busbar; the other end of No. 1 cylinder capacitor is connected with the other end of No. 2 cylinder capacitor through an insulating support plate. The integrated laminated busbar structure provided by the invention has small stray inductance and a simple structure, and only comprises two laminated busbars, so that the installation steps are simplified, and the stray inductance of a diode bridge is reduced.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings provided by the present invention without any creative effort.

Fig. 1 is an electrical topology diagram of an integrated laminated busbar structure suitable for a diode bridge according to the present invention;

fig. 2 is a top view of an integrated laminated busbar structure suitable for a diode bridge according to the present invention;

fig. 3 is a side view of an integrated laminated busbar structure suitable for a diode bridge according to the present invention;

fig. 4 is a schematic structural diagram of a first view angle of an integrated laminated busbar structure suitable for a diode bridge according to the present invention;

fig. 5 is a schematic structural diagram of a second view angle of the integrated laminated busbar structure for a diode bridge according to the present invention;

fig. 6 is a schematic structural diagram of a laminated busbar No. 1 according to the present invention;

fig. 7 is a schematic structural view of a No. 2 laminated busbar provided in the present invention;

FIG. 8 is a schematic view of the structure of an insulating plate according to the present invention;

in fig. 2 and 3, 301 is an IGBT press-fitting structure, 302 is a diode press-fitting structure, 303 is a capacitor bank, and 304 is a laminated busbar bank;

in fig. 4 and 5, 1 is a No. 4 crimped metal block, 2 is a No. 2 laminated busbar, 3 is a No. 2 crimped metal block, 4 is a No. 6 crimped metal block, 5 is a No. 2 cylindrical capacitor, 6 is a No. 1 cylindrical capacitor, 7 is a No. 2 IGBT, 8 is a No. 1 IGBT, 9 is a D4 diode, and 10 is a D3 diode; 11 is a No. 3 crimping metal block, 12 is a No. 1 crimping metal block, 13 is a No. 5 crimping metal block, 14 is a No. 1 laminated busbar, 15 is an insulating plate, 16 is an insulating support plate, 17 is a D1 diode, and 18 is a D2 diode;

in fig. 6, 19 is the E-pole connection terminal, 20 is the No. 1 connection board, 21 is the No. 2 cylindrical capacitor connection terminal, and 22 is the No. 1 opening;

in fig. 7, 23 is a C-pole connection terminal, 24 is a No. 2 connection plate, 25 is a No. 1 cylindrical capacitor connection terminal, and 26 is a No. 2 opening;

in fig. 8, 27 is an insulating connecting plate, and 28 is a connecting plate of a No. 1 cylindrical capacitor; reference numeral 29 denotes a first recess and 30 denotes a second recess.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.

Fig. 1 is an electrical topology diagram of an integrated laminated busbar structure suitable for a diode bridge according to the present invention; fig. 2 is a top view of an integrated laminated busbar structure suitable for a diode bridge according to the present invention; fig. 3 is a side view of an integrated laminated busbar structure suitable for a diode bridge according to the present invention. Referring to fig. 1 to 3, the integrated laminated busbar structure provided by the present invention includes: an IGBT press-fit structure 301, a diode press-fit structure 302, a capacitor bank 303, and a laminated busbar bank 304. The IGBT press-mounting structure is used for press-mounting 2 parallel IGBTs at one time, and the 2 parallel IGBTs are distributed horizontally; the 2 parallel IGBTs include IGBT number 1 (IGBT 1 in FIG. 1)8 and IGBT number 2 (IGBT 2 in FIG. 1) 7. The diode press-mounting structure is used for pressing and connecting 4 diodes at one time; the 4 diodes include a D1 diode 17, a D2 diode 18, a D3 diode 10, and a D4 diode 9 (corresponding to D1, D2, D3, D4, respectively, in fig. 1). Wherein the D1 diode and the D2 diode are in one group, the D3 diode and the D4 diode are in one group, forming two groups of diodes; the two diodes in the same group are arranged in the same direction; the two groups of diodes are distributed in a mirror image mode. The capacitor bank is composed of 2 series capacitors and an insulating support plate. The 2 series capacitors include cylinder capacitor No. 1 (C1 in fig. 1)6 and cylinder capacitor No. 2 (C2 in fig. 1) 5. The laminated busbar group comprises a No. 1 laminated busbar 14, a No. 2 laminated busbar 2 and an insulating plate 15.

Referring to fig. 1-5, the C pole of the IGBT number 1 and the C pole of the IGBT number 2 are connected to the cathode of the D1 diode and the cathode of the D3 diode through the laminated busbar number 2. The E pole of the IGBT No. 1 and the E pole of the IGBT No. 2 are connected with the anode of the D2 diode and the anode of the D4 diode through the laminated busbar No. 1 14. One end of the No. 1 cylindrical capacitor C1 is connected with the cathode of the D1 diode and the cathode of the D3 diode through the No. 2 laminated busbar 2. One end of the No. 2 cylindrical capacitor C2 is connected with the anode of the D2 diode and the anode of the D4 diode through the No. 1 laminated busbar 14. The other end of the No. 1 cylindrical capacitor C1 is connected to the other end of the No. 2 cylindrical capacitor C2 through the insulating support plate 15.

Specifically, as shown in fig. 4 and 5, the IGBT press-fitting structure 301 includes No. 1 IGBT8, No. 2 IGBT7, No. 3 crimped metal block 11, and No. 4 crimped metal block 1. The IGBT press-fitting structure 301 is used for press-fitting 2 parallel IGBTs at a time, the 2 parallel IGBTs are respectively No. 1 IGBT8 and No. 2 IGBT7, and the two IGBTs are horizontally distributed. The C pole of the No. 1 IGBT8 and the C pole of the No. 2 IGBT7 are connected through a No. 4 crimping metal block 1. The E pole of the No. 1 IGBT8 and the E pole of the No. 2 IGBT7 are connected through a No. 3 crimping metal block 11.

The diode press-fitting structure 302 comprises a D1 diode 17, a D2 diode 18, a D3 diode 10, a D4 diode 9, a No. 1 crimping metal block 12, a No. 2 crimping metal block 3, a No. 5 crimping metal block 13 and a No. 6 crimping metal block 4. The diode press-mounting structure 302 is used for pressing and connecting 4 diodes at a time, wherein the 4 diodes are respectively a D1 diode 17, a D2 diode 18, a D3 diode 10 and a D4 diode 9. As shown in fig. 1-5, wherein the D1 diode 17 and the D2 diode 18 are grouped together, and the D3 diode 10 and the D4 diode 9 are grouped together, forming two groups of diodes. The two diodes in the same group are arranged in the same direction; the cathodes and the anodes of the diodes in different groups are opposite; the two groups of diodes are distributed in a mirror image mode.

Wherein the anode of the D1 diode 17 is electrically connected with the No. 5 crimp metal block 13, and the cathode of the D2 diode 18 is electrically connected with the No. 5 crimp metal block 13. The anode of the D3 diode 10 is electrically connected with the No. 6 crimping metal block 4, and the cathode of the D4 diode 9 is electrically connected with the No. 6 crimping metal block 4. The No. 5 crimp metal block 13 connects the anode of the D1 diode 17 and the cathode of the D2 diode 18. Crimp metal block No. 6 4 connects the anode of diode D3 10 and the cathode of diode D4 9. The D1 diode 17 and the D2 diode 18 are arranged horizontally. Crimp metal block No. 1 12 connects the cathode of diode D1 17 and the cathode of diode D3 10. The D1 diode 17 and the D3 diode 10 are arranged longitudinally. The No. 2 crimped metal block 3 connects the anode of the D2 diode 18 and the anode of the D4 diode 9. The D2 diode 18 and the D4 diode 9 are arranged longitudinally.

The capacitor bank 303 includes No. 1 cylindrical capacitor 6, No. 2 cylindrical capacitor 5, and insulating support plate 16. The insulating support plate 16 has an overall shape of a long bar, and has a hole therein for being bolted to the end of the capacitor bank 303. The insulating support plate 16 is used for fixing the tail ends of the No. 1 capacitor 6 and the No. 2 cylindrical capacitor 5 and is positioned on the right side of the integral structure.

The laminated busbar group 304 includes a laminated busbar No. 1 14, a laminated busbar No. 2, and an insulating plate 15. The IGBT press-fitting structure 301, the diode press-fitting structure 302, and the capacitor bank 303 are connected by two

laminated busbars

1 and 2 and an insulating plate 15.

Fig. 6 is a schematic structural diagram of a laminated busbar No. 1 according to the present invention. Referring to fig. 6, the laminated busbar 14 No. 1 is of a rectangular structure as a whole, and the laminated busbar 14 No. 1 specifically includes an E-pole connection end 19, a connection plate 20 No. 1, and a cylindrical capacitor connection end 21 No. 2. The fixed end of the E pole connecting end 19 is connected with one end of the No. 1 connecting plate 20. The fixed end of No. 2 cylinder capacitor connecting end 21 is connected with the other end of No. 1 connecting plate 20. The E-pole connecting terminal 19 is parallel to the No. 2 cylindrical capacitor connecting terminal 21. The protruding end of the E-pole connecting terminal 19 protrudes in the opposite direction to the protruding end of the No. 2 cylindrical capacitor connecting terminal 21.

As shown in fig. 5, the E-pole connection terminal 19 of the laminated busbar No. 1 14 is connected to the E-poles of the IGBTs No. 18 and No. 27 through the crimp metal block No. 3 11. The No. 2 cylindrical capacitor connecting end 21 is connected with one end of the No. 2 cylindrical capacitor 5, and the other end of the No. 2 cylindrical capacitor 5 is connected with the insulating support plate 16. The middle part of the No. 1 connecting plate 20 is provided with a No. 1 opening 22, and the cathode of the D1 diode 17 is electrically connected with the No. 2 laminated busbar 2 through the No. 1 opening 22.

Fig. 7 is a schematic structural diagram of a No. 2 laminated busbar provided in the present invention. Referring to fig. 7, the No. 2 laminated busbar 2 is of a rectangular structure as a whole, and the No. 2 laminated busbar 2 specifically includes a C-electrode connecting end 23, a No. 2 connecting plate 24, and a No. 1 cylindrical capacitor connecting end 25; the fixed end of the C-pole connecting end 23 is connected with one end of the No. 2 connecting plate 24; the fixed end of No. 1 cylinder capacitor connecting end 25 is connected with the other end of No. 2 connecting plate 24. The C-pole connecting end 23 is parallel to the No. 1 cylindrical capacitor connecting end 25; the protruding direction of the protruding end of the C-pole connecting end 23 is the same as that of the protruding end of the No. 1 cylindrical capacitor connecting end 25.

As shown in fig. 4, the C-pole connection terminal 23 of the No. 2 laminated busbar 2 is connected to the C-poles of the No. 1 IGBT8 and the No. 2 IGBT7 through the No. 4 crimp metal block 1. The No. 1 cylindrical capacitor connecting end 25 is connected with one end of the No. 1 cylindrical capacitor 6, and the other end of the No. 1 cylindrical capacitor 6 is connected with the insulating support plate 16. The middle part of the No. 2 connecting plate 24 is provided with a No. 2 opening 26; the anode of the D4 diode 9 is electrically connected with the laminated busbar No. 1 14 through the opening No. 2 26.

Fig. 8 is a schematic structural view of an insulating plate provided by the present invention. The insulating plate 15 is sandwiched between the laminated busbar No. 1 and the laminated busbar No. 2 and is used for insulating the laminated busbar No. 1 and the laminated busbar No. 2 from each other. As shown in fig. 8, the insulating plate 15 has a rectangular overall structure, and the insulating plate 15 specifically includes an insulating connecting plate 27 and a No. 1 cylindrical capacitor connecting plate 28. The No. 1 cylindrical capacitor connecting plate 28 is arranged at one end, close to the capacitor bank 303, of the insulating connecting plate 27; the No. 1 cylindrical capacitor connecting plate 28 is perpendicular to the insulating connecting plate 27; the No. 1 cylindrical capacitor connecting end 25 is connected with one end of the No. 1 cylindrical capacitor 6 through the No. 1 cylindrical capacitor connecting plate 28. Specifically, as shown in fig. 7 and 8, the No. 1 cylindrical capacitor connecting terminal 25 and the No. 1 cylindrical capacitor connecting plate 28 have holes for connecting with the terminals of the No. 1 cylindrical capacitor 6.

The middle part of the insulating connecting plate 27 is provided with a first concave hole 29 and a second concave hole 30 which are arranged in opposite directions. The first concave hole 29 is used for electrically connecting the cathode of the D1 diode 17 with the laminated busbar 2 No. 2; the peripheral protrusion of the first concave hole 29 is used for insulating the D1 diode 17 from the laminated busbar No. 1 14. The second concave hole 30 is used for electrically connecting the anode of the D4 diode 9 with the laminated busbar No. 1 14; the peripheral protrusion of the second concave hole 30 is used for insulating the D4 diode 9 from the laminated busbar No. 2.

Electrically, the E poles of the No. 1 IGBTs 8 and No. 2 IGBTs 7 are connected with the anodes of the D2 diode 18 and the D4 diode 9 through the No. 1 laminated busbar 14. The C pole of the No. 1 IGBT1 and the No. 2 IGBT2 is connected with the cathodes of the D1 diode 17 and the D3 diode 10 through the No. 2 laminated busbar 2. One end of the No. 1 cylindrical capacitor 6 is connected with the D1 diode 17 and the cathode of the D3 diode 10 through a No. 2 laminated busbar 2. One end of the No. 2 cylindrical capacitor 5 is connected with the anodes of the D2 diode 18 and the D4 diode 9 through the No. 1 laminated busbar 14.

The invention provides an integrated laminated busbar structure suitable for a diode bridge, which comprises an IGBT press-mounting structure 301, a diode press-mounting structure 302, a capacitor bank 303, two laminated busbars and an insulating plate. One IGBT press-fit structure 301 crimps 2 parallel IGBTs at a time. One diode press-mounting structure 302 is used for press-mounting 4 diodes at a time, wherein two diodes are arranged in the same direction, and cathodes of the two groups of diodes are opposite and distributed in a mirror image mode. One capacitor bank 303 consists of 2 capacitors. The laminated busbar group comprises a No. 1 laminated busbar and a No. 2 laminated busbar. The integrated laminated busbar structure provided by the invention has small stray inductance and a simple structure, and only comprises two laminated busbars; thereby simplifying the mounting steps and reducing the stray inductance of the diode bridge.

The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention disclosed herein should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

The principles and embodiments of the present invention have been described herein using specific examples, which are presented solely to aid in the understanding of the apparatus and its core concepts; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.

Claims

1. The utility model provides a female structure of arranging of integration stromatolite suitable for diode bridge which characterized in that, female structure of arranging of integration stromatolite includes: the device comprises an IGBT press-mounting structure, a diode press-mounting structure, a capacitor bank and a laminated busbar bank;

the No. 1 laminated busbar body comprises an E-pole connecting end, a No. 1 connecting plate and a No. 2 cylindrical capacitor connecting end;

the middle part of the No. 1 connecting plate is provided with a No. 1 opening, and the cathode of the D1 diode is electrically connected with the No. 2 laminated busbar through the No. 1 opening;

the No. 2 laminated busbar body comprises a C-pole connecting end, a No. 2 connecting plate and a No. 1 cylindrical capacitor connecting end;

the middle part of the No. 2 connecting plate is provided with a No. 2 opening, and the anode of the D4 diode is electrically connected with the No. 1 laminated busbar through the No. 2 opening;

2. The integrated laminated busbar structure according to claim 1, wherein the IGBT press-fitting structure comprises a No. 1 IGBT, a No. 2 IGBT, a No. 3 press-fitting metal block and a No. 4 press-fitting metal block; the C pole of the No. 1 IGBT and the C pole of the No. 2 IGBT are connected through the No. 4 crimping metal block; and the E pole of the No. 1 IGBT and the E pole of the No. 2 IGBT are connected through the No. 3 crimping metal block.

3. The integrated laminated busbar structure according to claim 2, wherein the diode press-fitting structure comprises a D1 diode, a D2 diode, a D3 diode, a D4 diode, a No. 1 press-fit metal block, a No. 2 press-fit metal block, a No. 5 press-fit metal block and a No. 6 press-fit metal block; the anode of the D1 diode and the cathode of the D2 diode are respectively and electrically connected with the No. 5 crimping metal block; the anode of the D3 diode and the cathode of the D4 diode are respectively and electrically connected with the No. 6 crimping metal block; the cathode of the D1 diode and the cathode of the D3 diode are connected through the No. 1 crimping metal block; the anode of the D2 diode and the anode of the D4 diode are connected through the No. 2 crimped metal block.

4. The integrated laminated busbar structure according to claim 3, wherein the No. 1 laminated busbar comprises an E-pole connecting end, a No. 1 connecting plate and a No. 2 cylindrical capacitor connecting end; the fixed end of the E-pole connecting end is connected with one end of the No. 1 connecting plate; the fixed end of the No. 2 cylindrical capacitor connecting end is connected with the other end of the No. 1 connecting plate; the E-pole connecting end is parallel to the connecting end of the No. 2 cylindrical capacitor; the protruding direction of the protruding end of the E-pole connecting end is opposite to that of the protruding end of the No. 2 cylindrical capacitor connecting end;

5. The integrated laminated busbar structure according to claim 4, wherein the No. 2 laminated busbar comprises a C-pole connecting end, a No. 2 connecting plate and a No. 1 cylindrical capacitor connecting end; the fixed end of the C-pole connecting end is connected with one end of the No. 2 connecting plate; the fixed end of the No. 1 cylindrical capacitor connecting end is connected with the other end of the No. 2 connecting plate; the C-pole connecting end is parallel to the connecting end of the No. 1 cylindrical capacitor; the protruding direction of the protruding end of the C-pole connecting end is the same as that of the protruding end of the No. 1 cylindrical capacitor connecting end;

6. The integrated laminated busbar structure according to claim 5, wherein the laminated busbar group further comprises: an insulating plate; the insulating plate is clamped between the No. 1 laminated busbar and the No. 2 laminated busbar.

7. The integrated laminated busbar structure according to claim 6, wherein the insulating plate comprises an insulating connecting plate and a No. 1 cylindrical capacitor connecting plate; the No. 1 cylindrical capacitor connecting plate is arranged at one end, close to the capacitor bank, of the insulating connecting plate; the No. 1 cylindrical capacitor connecting plate is vertical to the insulating connecting plate; and the No. 1 cylindrical capacitor connecting end is connected with one end of the No. 1 cylindrical capacitor through the No. 1 cylindrical capacitor connecting plate.

8. The integrated laminated busbar structure according to claim 7, wherein the insulating connecting plate is provided with a first concave hole and a second concave hole which are arranged in opposite directions; the first concave hole is used for electrically connecting the cathode of the D1 diode with the No. 2 laminated busbar; the peripheral protrusion of the first concave hole is used for insulating the D1 diode from the No. 1 laminated busbar; the second concave hole is used for electrically connecting the anode of the D4 diode with the laminated busbar No. 1; and the peripheral protrusion of the second concave hole is used for insulating the D4 diode from the No. 2 laminated busbar.