CN111081566A - Pressure-assisted silver sintering device for power semiconductor chip - Google Patents
Pressure-assisted silver sintering device for power semiconductor chip Download PDFInfo
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- CN111081566A CN111081566A CN201811217696.8A CN201811217696A CN111081566A CN 111081566 A CN111081566 A CN 111081566A CN 201811217696 A CN201811217696 A CN 201811217696A CN 111081566 A CN111081566 A CN 111081566A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/77—Apparatus for connecting with strap connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/77—Apparatus for connecting with strap connectors
- H01L2224/7725—Means for applying energy, e.g. heating means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/77—Apparatus for connecting with strap connectors
- H01L2224/7725—Means for applying energy, e.g. heating means
- H01L2224/773—Means for applying energy, e.g. heating means by means of pressure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/77—Apparatus for connecting with strap connectors
- H01L2224/777—Means for aligning
- H01L2224/77703—Mechanical holding means
Abstract
A pressure-assisted silver sintering device for a power semiconductor chip comprises a nano silver film transfer tool and a silver sintering tool. The nano silver film transfer tool is used for attaching a nano silver film to the gasket, and is provided with a first pressure release structure for releasing internal stress generated by the tool due to uneven heating in the nano silver film transfer process. The silver sintering tool is used for silver sintering the gasket and the chip attached with the nano silver film, and a second pressure release structure used for releasing internal stress generated by the tool due to uneven heating in the silver sintering packaging process is arranged on the silver sintering tool. Because the nano silver film transfer tool and the silver sintering tool are both provided with the pressure release structures, the metal element in the tool can be prevented from deforming in the heat treatment process of chip silver sintering packaging, and the sintering packaging efficiency of the chip is improved.
Description
Technical Field
The invention relates to the technical field of silver sintering, in particular to a pressure-assisted silver sintering device for a power semiconductor chip, which belongs to the field of pressure-assisted silver sintering tools.
Background
In the existing silver sintering packaging process, when the chip area is more than 25mm2In practice, pressure-assisted silver is often usedAnd the sintering process mainly adopts a nano silver transfer film to realize the rapid sintering of the chip and the gasket. The technological process includes transferring nanometer silver film to chip or spacer, aligning the chip or spacer with the chip or chip, and sintering the chip and spacer into one integral via outer pressure at high temperature.
The technical process is realized by means of a specific tool, and the function of the tool is mainly embodied in two aspects, namely, the pressure required by sintering between the chip and the gasket is applied; and secondly, positioning and aligning the chip, the nano silver film and the gasket. In the prior art, by applying pressure to a single chip and a gasket subunit respectively, the pressure uniformity of a plurality of chip subunits during simultaneous sintering is improved, and the formation of a uniform silver sintering layer thickness is facilitated. The nano silver film transfer and chip sintering positioning tool is mostly realized by adopting a metal positioning frame, and because the sizes of the chip and the gasket are different, a plurality of layers of metal positioning frames are often required to be arranged. However, the thermal conductivity and the thermal expansion coefficient of each metal layer are different, so that the tool is often deformed in the sintering heat treatment process, and the chip or the gasket is moved and cannot be positioned. When the multi-chip is sintered, the silver sintering efficiency of the chip subunits is greatly limited due to the deformation problem of the positioning tool.
Therefore, a silver sintering positioning tool design capable of reducing the deformation of the positioning tool in the silver sintering process is needed to improve the silver sintering packaging efficiency of the chip subunit.
Disclosure of Invention
The technical problem solved by the invention is as follows: in the traditional heat treatment process of silver sintering, due to the difference between the heat conductivity and the thermal expansion coefficient among the multiple layers of metal positioning frames, the silver sintering tool is deformed, and the chip or the gasket moves in the heat treatment process. To solve the problem, the present invention provides a pressure-assisted silver sintering apparatus for a power semiconductor chip, comprising:
the nano silver film transfer tool is used for attaching a nano silver film to a gasket or a chip, and is provided with a first pressure release structure for releasing the internal stress of the tool generated by uneven heating in the process of nano silver film transfer; and
the silver sintering tool is used for silver sintering the chip and the gasket attached with the nano silver film or silver sintering the gasket and the chip attached with the nano silver film, and a second pressure release structure used for releasing internal stress generated by the tool due to uneven heating in the silver sintering packaging process is arranged on the silver sintering tool.
Preferably, the nano silver film transfer tool comprises a first substrate, a first positioning frame and a first connecting structure, wherein the first positioning frame is provided with the first pressure release structure, and the first substrate and the first positioning frame are detachably connected through the first connecting structure.
Preferably, the first pressure relief structure is a first pressure relief hole formed in the first positioning frame.
Preferably, the first substrate is provided with a containing groove for containing the nano silver film and a plurality of first substrate positioning holes;
the first positioning frame is provided with a plurality of first pressure relief holes, a plurality of silver film transfer positioning holes for positioning the gasket or the chip and a plurality of first positioning frame positioning holes;
the first connecting structure comprises a plurality of first positioning pins, and each first positioning pin penetrates through a corresponding first substrate positioning hole and a corresponding first positioning frame positioning hole so as to realize the alignment positioning of the first substrate and the first positioning frame.
Preferably, the silver sintering tool comprises a second substrate, a second positioning frame, a third positioning frame and a second connecting structure, wherein the second pressure relief structure is arranged on the second positioning frame, the third pressure relief structure is arranged on the third positioning frame, and the second substrate, the second positioning frame and the third positioning frame are detachably connected through the second connecting structure.
Preferably, the second pressure relief structure is a second pressure relief hole formed in the second positioning frame, and the third pressure relief structure is a third pressure relief hole formed in the third positioning frame.
Preferably, the second substrate is provided with a plurality of second substrate positioning holes;
the second positioning frame is also provided with a plurality of first gasket holes for positioning the first gasket attached with the nano silver film and a plurality of second positioning frame positioning holes;
the third positioning frame is also provided with a plurality of chip holes for positioning the chip and a plurality of third positioning frame positioning holes;
the second connecting structure comprises a plurality of second positioning pins, and each second positioning pin penetrates through a corresponding second substrate positioning hole, a second positioning frame positioning hole and a third positioning frame positioning hole so as to realize the alignment positioning of the second substrate, the second positioning frame and the third positioning frame;
and a nano silver film is attached to the surface of the first gasket or the collector of the chip through the nano silver film transfer tool.
Preferably, the silver sintering tool further comprises a fourth positioning frame, wherein the positioning frame is provided with a plurality of fourth pressure release holes, a plurality of second gasket holes for positioning the second gasket attached with the nano silver film and a plurality of fourth positioning frame positioning holes,
each second positioning pin of the second connecting structure penetrates through the corresponding second substrate positioning hole, second positioning frame positioning hole, third positioning frame positioning hole and fourth positioning frame positioning hole so as to realize the alignment positioning of the second substrate, the second positioning frame, the third positioning frame and the fourth positioning frame;
the first gasket and the second gasket are attached with a nano silver film through the nano silver film transfer tool, or the surface of the collector of the chip is attached with the nano silver film through the nano silver film transfer tool.
Preferably, the second gasket has a size smaller than that of the chip, the silver sintering tool further comprises a baffle plate, the baffle plate is provided with a plurality of fifth pressure relief holes, a plurality of chip through holes for the chip to penetrate through, and a plurality of baffle plate positioning holes, the thickness of the baffle plate is configured to avoid the fourth positioning frame from contacting the chip in the silver sintering process,
each second positioning pin of the second connecting structure penetrates through the corresponding second substrate positioning hole, second positioning frame positioning hole, third positioning frame positioning hole, baffle positioning hole and fourth positioning frame positioning hole, so that the second substrate, the second positioning frame, the third positioning frame, the baffle and the fourth positioning frame are aligned and positioned.
Preferably, the diameter of the chip through hole is greater than the length of the chip, and the diameter of the chip through hole is greater than the length of the second gasket.
Compared with the prior art, one or more embodiments in the above scheme can have the following advantages or beneficial effects:
by applying the pressure-assisted silver sintering device for the power semiconductor chip, which is provided by the invention, the pressure release structures are arranged in the nano silver film transfer tool and the silver sintering tool, so that the deformation of the tools caused by uneven heating in the heat treatment process of silver sintering can be avoided, and the silver sintering tool provided by the invention can be used for simultaneously carrying out single-sided or double-sided silver sintering and packaging on multiple chips, thereby improving the sintering and packaging efficiency of the chips.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The scope of the present disclosure may be better understood by reading the following detailed description of exemplary embodiments in conjunction with the accompanying drawings. Wherein the included drawings are:
fig. 1 shows a combined structure of a double-sided silver sintered IGBT chip and a gasket;
FIG. 2 shows a sectional view of a nanosilver film transfer tool;
FIG. 3 shows a top view of a nanosilver film transfer tooling substrate;
FIG. 4 shows a top view of a gasket positioning frame A of the nano silver film transfer tool;
FIG. 5 shows a top view of a positioning frame B of a nanosilver film transfer tooling gasket;
FIG. 6 shows a cross-sectional view of a double-sided silver sintering tool;
FIG. 7 shows a top view of a silver sintered tooling substrate;
FIG. 8 shows a top view of a spacer positioning frame under a silver sintering tool;
FIG. 9 shows a top view of a silver sintering tooling chip positioning frame;
FIG. 10 shows a top view A of a spacer positioning frame on a silver sintering tool;
FIG. 11 shows a top view B of a spacer positioning frame on a silver sintering tool; and
figure 12 shows a top view of a silver sintered tooling baffle.
Detailed Description
Further areas of applicability of the present disclosure will become apparent from the detailed description provided hereinafter. However, it should be understood that the detailed description of the exemplary embodiments are for illustrative purposes only and, therefore, are not intended to necessarily limit the scope of the present disclosure.
In the novel crimping type IGBT module package shown in fig. 1, interconnection among the metal upper pad 1, the IGBT chip 2, and the metal lower pad 3 can be realized through a silver sintering process to form a sintered sub-unit structure, and then the sintered sub-unit structure is interconnected with the collector and emitter of the main module under a certain external pressure to complete the module package. The silver sintering layer has excellent electric conduction and heat conduction performance, and can obviously reduce the contact resistance and the contact thermal resistance of the subunit structure. When carrying out the two-sided silver sintering to the chip, the silver sintering layer can provide buffer protection to IGBT chip emitter surface and gate oxide layer, avoids the chip to be damaged by the burr on the metal shim, and then has improved the reliability of module greatly.
The research on the existing silver sintering packaging literature finds that when the chip area is larger than 25mm2In the process, a pressure-assisted silver sintering process is usually adopted, and a nano silver transfer film is mostly adopted to realize the rapid sintering of the chip and the gasket. The above-mentioned technological process mainly includes the steps of transferring nano silver film to chip or pad, aligning and placing between the transferred film chip (or pad) and pad (or chip), and raisingAnd sintering the chip and the gasket into a whole by external pressure at the temperature. The technical process is realized by means of a specific tool, and the function of the tool is mainly embodied in two aspects: firstly, applying the pressure required by sintering between the chip and the gasket; and secondly, positioning and aligning the chip, the nano silver film and the gasket.
There are many existing technologies that provide solutions for achieving pressure uniformity in silver sintering, and by applying pressure to a single chip and a gasket subunit, respectively, pressure uniformity when multiple chips are sintered at the same time is improved, which facilitates formation of a uniform silver sintering layer thickness.
The nano silver film transfer and chip sintering positioning tool is mostly realized by adopting a metal positioning frame, and because the sizes of the chip and the gasket are different, a plurality of layers of metal positioning frames are often required to be arranged. However, the thermal conductivity and the thermal expansion coefficient of each metal layer are different, so that the tool is often deformed in the sintering heat treatment process, and the chip or the gasket is moved and cannot be positioned. When the multi-chip is sintered, the silver sintering efficiency of the chip is greatly limited due to the deformation problem of the positioning tool.
Therefore, a new positioning tool design is needed to be adopted to reduce the deformation of the tool and improve the production efficiency of silver sintering of the chip subunit.
Based on the above, the invention provides a pressure-assisted silver sintering device for a power semiconductor chip, which aims to avoid the deformation of each positioning frame and each baffle plate in the heat treatment process of silver sintering by arranging the positioning frame with a pressure release structure and the baffle plate on each layer of metal positioning frame, thereby improving the assembly efficiency of the chip and the gasket and greatly improving the sintering efficiency.
Various embodiments of the present invention will be described in detail below.
Example one
The embodiment relates to a pressure-assisted silver sintering device for a power semiconductor chip. In particular, the apparatus is used to package a novel crimp-on module chip subunit as shown in fig. 1. The chip subunit mainly comprises an upper pad 1 and a lower pad 3 which are attached with nano silver films, and a chip 2.
The pressure-assisted silver sintering device of the embodiment mainly comprises a nano silver film transfer tool and a silver sintering tool. Specifically, the method comprises the following steps:
the nano silver film transfer tool is used for carrying out a nano silver film transfer process, namely, the nano silver film is transferred to a gasket or a chip to manufacture the gasket or the chip which is required by the silver sintering tool and is attached with the nano silver film. Taking the pad nano silver film transfer process as an example, the tool attaches the nano silver film to the pad to obtain the pad attached with the nano silver film. A first pressure release structure used for releasing internal stress generated by the tool due to uneven heating in the process of transferring the nano silver film is arranged on a positioning frame of the nano silver film transferring tool.
The silver sintering tool is used for performing silver sintering on the gasket and the chip, which are attached with the nano silver film, so that the chip and the gasket are packaged. And a second pressure release structure used for releasing the internal stress of the silver sintering tool generated by uneven heating in the silver sintering packaging process is arranged on the positioning frame of the silver sintering tool.
By applying the pressure-assisted silver sintering device for the power semiconductor chip, provided by the invention, as the pressure release structures are arranged in the nano silver film transfer tool and the silver sintering tool, the positioning frames of all layers can be prevented from deforming in the silver sintering heat treatment process, so that the sintering packaging efficiency of the chip is improved, and single-sided or double-sided silver sintering packaging of multiple chips can be simultaneously carried out.
Example two
The embodiment relates to a nano silver film transfer tool in a pressure-assisted silver sintering device for a power semiconductor chip in the first embodiment. Fig. 2 to 6 show a sectional view of the nano silver film transfer tool and a top view of the positioning frame. As shown in fig. 2, the nano silver film transfer tool used in the pressure-assisted silver sintering device for power semiconductor chips mainly includes a nano silver film transfer tool substrate 4, positioning frames 5a and 5b for silver film transfer spacers (chips), and a nano silver film transfer tool connection structure.
The nano silver film transferring tool is used for attaching the nano silver film 10 to a pad to be transferred with the silver film. Specifically, a nano silver film groove 12 for accommodating the nano silver film 10 and a plurality of nano silver film transfer tool substrate positioning holes 11 are formed in the nano silver film transfer tool substrate 4 shown in fig. 3. Fig. 4 and 5 show positioning frames 5a,5b for pads and chips of different shapes for transferring pads (chips) to be silver film. Referring to fig. 4, the positioning frame 5a for the pad to be silver-plated film transfer is provided with a plurality of first pressure release structures, a plurality of silver-plated film transfer positioning holes 14a for positioning the pad to be silver-plated film transfer, and a plurality of positioning frame positioning holes 13a for positioning the pad to be silver-plated film transfer. The first pressure relief structure is a first pressure relief hole 9a formed in the positioning frame 5a of the silver film transfer gasket and used for relieving internal stress generated by uneven heating of the tool.
Referring to fig. 5, the positioning frame 5b for the pad to be silver-plated film transfer is provided with a plurality of first pressure release structures, a plurality of silver-plated film transfer positioning holes 14b for positioning the pad to be silver-plated film transfer, and a plurality of positioning frame positioning holes 13b for positioning the pad to be silver-plated film transfer. The shapes and sizes of the silver film transfer positioning holes 14a in fig. 4 and the silver film transfer positioning holes 14b in fig. 5 are the same as those of the pads or chips to be silver film transferred corresponding to the positioning frames 5a,5b of the pads (chips) to be silver film transferred. The first pressure relief structure is a first pressure relief hole 9b formed in the chip positioning frame 5b for transferring the silver film, and is used for relieving internal stress generated by uneven heating of the tool. The nano silver film transfer tool substrate 4 is detachably connected with the positioning frame 5a of the gasket to be transferred with the silver film or the positioning frame 5b of the gasket to be transferred with the silver film through the nano silver film transfer tool connecting structure, so that the nano silver film transfer tool is formed.
The connecting structure of the nano silver film transfer tool comprises a plurality of first positioning pins 6, and as can be seen from the sectional view of the nano silver film transfer tool in fig. 2, each first positioning pin 6 sequentially penetrates through a corresponding positioning hole 13a of a positioning frame of the pad to be transferred to the silver film or a positioning hole 13b of the positioning frame of the pad to be transferred to the silver film and a positioning hole 11 of a substrate of the nano silver film transfer tool from top to bottom, so that the alignment and positioning of the substrate 4 of the nano silver film transfer tool and the positioning frame 5a of the pad to be transferred to the silver film or the positioning frame 5b of the pad to be transferred to the silver film are realized.
When silver film transfer is carried out, the gasket 7 or the chip to be transferred is placed in the silver film transfer positioning hole 14a of the nano silver film transfer tool, then dynamic pressure 8 is independently applied to each gasket 7 or chip, and the nano silver film 10 is transferred to the gasket 7 or the chip, so that the gasket or the chip attached with the nano silver film is obtained.
By applying the nano silver film transfer tool in the pressure-assisted silver sintering device for the power semiconductor chip, provided by the invention, a nano silver film transfer process of a plurality of gaskets or chips can be simultaneously carried out. The positioning frame with the pressure release structure used in the nano silver film transfer tool can avoid deformation of the positioning frame in the heat treatment process of silver film transfer. And this frock uses the locating pin to aim at the location, need not the screw and fixes, improves the assembly efficiency of chip, improves silver membrane transfer efficiency greatly. And the base plate and the positioning frame can be made of metal such as steel or titanium, preferably stainless steel, and are simple to prepare.
In addition, as the shape and the size of the silver film transfer positioning hole 14 are consistent with those of the gasket 7 to be transferred with the silver film, the residual nano silver film 10 at the edge of the gasket can be cut during silver film transfer, and the pollution of redundant nano silver powder to the chip is avoided.
EXAMPLE III
The embodiment relates to a silver sintering tool in a pressure-assisted silver sintering device for a power semiconductor chip in the first embodiment. Fig. 6 to 12 show sectional views of the double-sided silver sintering tool and plan views of constituent elements. As shown in fig. 6, the double-sided silver sintering apparatus in the pressure-assisted silver sintering apparatus for power semiconductor chips mainly includes a silver sintering apparatus substrate 15, a lower pad positioning frame 16, a chip positioning frame 17, an upper pad positioning frame 18, a baffle 19, and a silver sintering apparatus connection structure.
The silver sintering tool is used for carrying out silver sintering on the gasket and the chip which are attached with the nano silver film. In particular, the amount of the solvent to be used,
the silver sintering tooling substrate 15 shown in fig. 7 is provided with a plurality of silver sintering tooling substrate positioning holes 26.
The lower pad positioning frame 16 shown in fig. 8 is provided with a second pressure release structure, a plurality of first pad holes 28 for positioning the lower pad 24 to which the nano silver film is attached, and a plurality of lower pad positioning frame positioning holes 29.
The chip positioning frame 17 shown in fig. 9 is provided with a third pressure relief structure, a plurality of chip holes 31 for positioning the chip 25, and a plurality of chip positioning frame positioning holes 32.
The upper gasket positioning frame 18 shown in fig. 10 is provided with a plurality of fourth pressure release structures, a plurality of second gasket holes 34 for positioning the upper gasket 22 to which the nano silver film is attached, and a plurality of upper gasket positioning frame positioning holes 35.
The second pressure relief structure is a second pressure relief hole 27 formed in the lower gasket positioning frame 16, the third pressure relief structure is a third pressure relief hole 30 formed in the chip positioning frame 17, and the fourth pressure relief structure is a fourth pressure relief hole 33 formed in the upper gasket positioning frame 18. The three pressure relief structures form a pressure relief hole 23 in the silver sintering tool structure, and are used for relieving internal stress generated by uneven heating of the silver sintering tool.
The positions of the pressure release structure and the positioning holes on the positioning frame can be changed according to requirements. Fig. 11 illustrates an alternative arrangement of the pressure relief structure and the positioning holes, using the upper gasket positioning frame 18 as an example. The pressure release structure of the upper gasket positioning frame 18 and the arrangement of the upper gasket positioning frame positioning holes 35 used in the present embodiment are the arrangements shown in fig. 10.
In this embodiment, since the size of the upper pad 22 attached with the nano silver film is smaller than the size of the chip 25, in the double-sided silver sintering tool of this embodiment, the baffle 19 is further disposed between the chip positioning frame 17 and the upper pad positioning frame 18, so as to prevent the upper pad positioning frame 18 from contacting the chip 25 during the silver sintering process. The baffle plate 19 shown in fig. 12 is provided with a plurality of fifth pressure release holes 36, a plurality of chip through holes 37 through which the chips 25 pass, and a plurality of baffle plate positioning holes 38. The diameter of the chip through hole 37 is larger than the length of the chip 25 and the length of the upper pad 22, and the thickness of the baffle plate 19 is configured to avoid the upper pad positioning frame 18 from coming into contact with the chip 25 during the silver sintering process.
The silver sintering tool substrate 15, the lower gasket positioning frame 16, the chip positioning frame 17, the baffle 19 and the upper gasket positioning frame 18 are detachably connected through a silver sintering tool connecting structure to form a double-sided silver sintering tool.
Specifically, silver sintering frock connection structure includes a plurality of silver sintering frock locating pins 20, and every silver sintering frock locating pin 20 from top to bottom runs through corresponding upper gasket locating frame locating hole 35, baffle locating hole 38, chip locating frame locating hole 32, lower gasket locating frame locating hole 29 and silver sintering frock base plate locating hole 26 to realize the alignment location of silver sintering frock base plate 15, lower gasket locating frame 16, chip locating frame 17, baffle 19 and upper gasket locating frame 18.
When the upper pad 22 and the lower pad 24 to which the nano-silver film is attached are used for double-sided silver sintering of the chip, the lower pad 24 to which the nano-silver film is attached, the chip 25 and the upper pad 22 to which the nano-silver film is attached are sequentially placed in the first pad hole 28, the chip hole 31 and the second pad hole 34 in the double-sided silver sintering tool through the chip through hole 37. The upper pad 22 and the lower pad 24 to which the nano-silver film is attached have a nano-silver film attached to their surfaces facing the chip 25. The upper pad 22 with the attached nano-silver film, the chip 25 and the lower pad 24 with the attached nano-silver film form a chip subunit to be packaged on two sides. And then independently applying dynamic pressure 21 to each chip subunit to be double-sided packaged, and carrying out silver sintering on the upper gasket 22 and the lower gasket 24 which are attached with the nano silver film and the chip 25 at a specific temperature to obtain a double-sided silver sintered chip, thereby completing the packaging of the chip subunits.
The silver sintering tool can also use the chip 25 with the single surface attached with the nano silver film to carry out double-sided silver sintering on the chip. Since the contact surface of the chip 25 and the lower pad 24, that is, the collector of the chip 25 is a whole layer of metal, the nano-silver film transfer can be performed and the nano-silver film transfer and the sintering with the lower pad 24 can be performed. And the emitter and the gate of the chip 25 are arranged on the other surface of the chip 25, namely the contact surface of the chip 25 and the upper gasket 22, the emitter and the gate need to be isolated, and the chip terminal structure exists on the surface, so that the nano silver film transfer process cannot be carried out. Therefore, when the chip 25 having the nano-silver film attached to one surface thereof is subjected to the double-sided silver firing, the chip sub-unit is packaged using the lower pad 24, the chip 25 having the nano-silver film attached to the collector surface thereof, and the upper pad 22 having the nano-silver film attached thereto.
Specifically, the lower pad 24, the chip 25 with the nano silver film attached to the collector surface, and the upper pad 22 with the nano silver film attached to the collector surface are placed in the first pad hole 28, the chip hole 31, and the second pad hole 34 in the double-sided silver sintering tool through the chip through hole 37, the nano silver film is attached to the surface of the side, facing the lower pad 24, of the chip 25 with the nano silver film attached to the collector surface, and the nano silver film is attached to the surface of the side, facing the emitter and the gate of the chip 25, of the upper pad 22 with the nano silver film attached to the collector surface. The upper pad 22 with the attached nano-silver film, the chip 25 with the attached nano-silver film on the collector surface and the lower pad 24 form a chip subunit to be packaged on two sides. And then, independently applying dynamic pressure 21 to each chip subunit to be double-sided packaged, and carrying out silver sintering on the upper gasket 22 attached with the nano silver film, the chip 25 attached with the nano silver film on the collector surface and the lower gasket 24 to obtain a double-sided silver sintered chip, thereby completing the packaging of the chip subunits.
In addition, the silver sintering tool can also be used for single-side step silver sintering. Specifically, the silver sintering tool substrate 15, the lower gasket positioning frame 16 and the chip positioning frame 17 are detachably connected by using a silver sintering tool positioning pin to form a single-sided silver sintering tool.
When the chip single-side stepwise silver sintering is performed using the upper pad 22 and the lower pad 24 to which the nano-silver film is attached, first, the lower pad 24 and the chip 25 to which the nano-silver film is attached are sequentially placed in the first pad hole 28 and the chip hole 31 in the single-side silver sintering tool, and the nano-silver film is attached to the surface of the lower pad 24 on the side facing the collector of the chip 25. The lower pad 24 with the attached nano silver film and the chip 25 form a chip subunit to be single-side packaged at one time. And then, independently applying dynamic pressure to each single-side packaged chip subunit to be subjected to one-time packaging, and carrying out silver sintering on the lower gasket 24 and the chip 25 which are attached with the nano silver film to obtain the single-side silver sintered chip.
And then, sequentially placing the single-sided silver sintered chip and the upper gasket 22 attached with the nano silver film in the first gasket hole 28, the chip hole 31 and the second gasket hole 34 in the double-sided silver sintering tool through the chip through hole 37, wherein the nano silver film is attached to the surface of one side, facing the emitter and the grid of the single-sided silver sintered chip, of the upper gasket 22 attached with the nano silver film. The single-sided silver sintered chip and the upper pad 22 attached with the nano silver film form a chip subunit to be secondarily packaged on the single side. And then, independently applying dynamic pressure to each single-sided chip subunit to be secondarily packaged, and carrying out silver sintering on the single-sided silver sintered chip and the upper gasket 22 attached with the nano silver film to obtain a double-sided silver sintered chip, so as to finish packaging of the chip subunits.
The silver sintering tool can also perform single-side step silver sintering on the chip 25 with the nano silver film attached to the collector surface. Specifically, the lower gasket 24 and the chip 25 with the nano-silver film attached to the collector surface are sequentially placed in the first gasket hole 28 and the chip hole 31 in the single-sided silver sintering tool, and the nano-silver film is attached to the surface of the side, facing the lower gasket 24, of the chip 25 with the nano-silver film attached to the collector surface. The lower gasket 24 and the chip 25 with the nano silver film attached on the collector electrode surface form a chip subunit to be subjected to one-time single-side packaging. And then, independently applying dynamic pressure to each single-side packaged chip subunit to be subjected to primary packaging, and carrying out silver sintering on the lower gasket 24 and the chip 25 to obtain the single-side silver sintered chip.
And then, sequentially placing the single-sided silver sintered chip and the upper gasket 22 attached with the nano silver film into the first gasket hole 28, the chip hole 31 and the second gasket hole 34 in the double-sided silver sintering tool through the chip through hole 37, wherein the nano silver film is attached to the surface of one side, facing the single-sided silver sintered chip, of the upper gasket 22 attached with the nano silver film. The single-sided silver sintered chip and the upper gasket 22 attached with the nano silver film form a chip subunit to be secondarily packaged on the single side. And then, independently applying dynamic pressure to each single-sided chip subunit to be secondarily packaged, and carrying out silver sintering on the single-sided silver sintered chip and the upper gasket 22 attached with the nano silver film to obtain a double-sided silver sintered chip, so as to finish packaging of the chip subunits.
In the pressure-assisted silver sintering device for the power semiconductor chip, which is provided by the invention, the silver sintering tool can be used for simultaneously carrying out silver sintering on large-scale chips and gaskets with different sizes, and the silver sintering tool comprises an upper gasket and a lower gasket, so that the sintering efficiency is improved. The positioning frames and the baffle plates with the pressure release structures used in the silver sintering tool can avoid deformation of the positioning frames and the baffle plates in the heat treatment process of silver sintering, and the tool is aligned and positioned by the positioning pins without screws, so that the assembly efficiency of a chip and a gasket is improved, and the sintering efficiency is greatly improved. The base plate, the positioning frames and the baffle plates can be made of metal such as steel or titanium, stainless steel is preferred, and the manufacturing is simple.
Although the embodiments of the present invention have been described above, the above description is only for the convenience of understanding the present invention, and is not intended to limit the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A pressure assisted silver sintering apparatus for power semiconductor chips, comprising:
the nano silver film transfer tool is used for attaching a nano silver film to a gasket or a chip, and is provided with a first pressure release structure for releasing the internal stress of the tool generated by uneven heating in the process of nano silver film transfer; and
the silver sintering tool is used for silver sintering the chip and the gasket attached with the nano silver film or silver sintering the gasket and the chip attached with the nano silver film, and a second pressure release structure used for releasing internal stress generated by the tool due to uneven heating in the silver sintering packaging process is arranged on the silver sintering tool.
2. The pressure-assisted silver sintering device of claim 1, wherein the nano silver film transfer tool comprises a first substrate, a first positioning frame and a first connecting structure, wherein the first positioning frame is provided with the first pressure relief structure, and the first substrate and the first positioning frame are detachably connected through the first connecting structure.
3. The pressure-assisted silver sintering apparatus of claim 2 wherein the first pressure relief structure is a first pressure relief hole formed in the first positioning frame.
4. The pressure-assisted silver sintering apparatus of claim 3,
the first substrate is provided with a containing groove for containing the nano silver film and a plurality of first substrate positioning holes;
the first positioning frame is provided with a plurality of first pressure relief holes, a plurality of silver film transfer positioning holes for positioning the gasket or the chip and a plurality of first positioning frame positioning holes;
the first connecting structure comprises a plurality of first positioning pins, and each first positioning pin penetrates through a corresponding first substrate positioning hole and a corresponding first positioning frame positioning hole so as to realize the alignment positioning of the first substrate and the first positioning frame.
5. The pressure-assisted silver sintering device according to claim 1, wherein the silver sintering tool comprises a second substrate, a second positioning frame, a third positioning frame and a second connecting structure, wherein the second positioning frame is provided with the second pressure relief structure, the third positioning frame is provided with a third pressure relief structure, and the second substrate, the second positioning frame and the third positioning frame are detachably connected through the second connecting structure.
6. The pressure-assisted silver sintering apparatus according to claim 5, wherein the second pressure relief structure is a second pressure relief hole provided on the second positioning frame, and the third pressure relief structure is a third pressure relief hole provided on the third positioning frame.
7. The pressure-assisted silver sintering apparatus of claim 6,
a plurality of second substrate positioning holes are formed in the second substrate;
the second positioning frame is also provided with a plurality of first gasket holes for positioning the first gaskets and a plurality of second positioning frame positioning holes;
the third positioning frame is also provided with a plurality of chip holes for positioning the chip and a plurality of third positioning frame positioning holes;
the second connecting structure comprises a plurality of second positioning pins, and each second positioning pin penetrates through a corresponding second substrate positioning hole, a second positioning frame positioning hole and a third positioning frame positioning hole so as to realize the alignment positioning of the second substrate, the second positioning frame and the third positioning frame;
and a nano silver film is attached to the surface of the first gasket or the collector of the chip through the nano silver film transfer tool.
8. The pressure-assisted silver sintering apparatus of claim 7,
the silver sintering tool also comprises a fourth positioning frame, a plurality of fourth pressure relief holes, a plurality of second gasket holes for positioning the second gasket and a plurality of fourth positioning frame positioning holes are arranged on the positioning frame,
each second positioning pin of the second connecting structure penetrates through the corresponding second substrate positioning hole, second positioning frame positioning hole, third positioning frame positioning hole and fourth positioning frame positioning hole so as to realize the alignment positioning of the second substrate, the second positioning frame, the third positioning frame and the fourth positioning frame;
the first gasket and the second gasket are attached with a nano silver film through the nano silver film transfer tool, or the surface of the collector of the chip is attached with the nano silver film through the nano silver film transfer tool.
9. The pressure-assisted silver sintering apparatus of claim 8,
the second pads have a size smaller than the size of the chip,
the silver sintering tool further comprises a baffle plate, wherein a plurality of fifth pressure release holes, a plurality of chip through holes for the chips to penetrate through and a plurality of baffle plate positioning holes are formed in the baffle plate, the thickness of the baffle plate is configured to avoid the fourth positioning frame from contacting the chips in the silver sintering process,
each second positioning pin of the second connecting structure penetrates through the corresponding second substrate positioning hole, second positioning frame positioning hole, third positioning frame positioning hole, baffle positioning hole and fourth positioning frame positioning hole, so that the second substrate, the second positioning frame, the third positioning frame, the baffle and the fourth positioning frame are aligned and positioned.
10. The pressure-assisted silver sintering apparatus of claim 9,
the diameter of the chip through hole is larger than the length of the chip, and the diameter of the chip through hole is larger than the length of the second gasket.
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| CN201811217696.8A CN111081566B (en) | 2018-10-18 | 2018-10-18 | Pressure-assisted silver sintering device for power semiconductor chip |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112164854A (en) * | 2020-08-24 | 2021-01-01 | 扬州船用电子仪器研究所(中国船舶重工集团公司第七二三研究所) | Multifunctional integrated tool for assembling, positioning and sintering microstrip substrate |
| CN114156215A (en) * | 2022-02-09 | 2022-03-08 | 南通泓金贝电子科技有限公司 | Automatic sintering equipment for diode element |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202631897U (en) * | 2012-06-28 | 2012-12-26 | 北京京东方光电科技有限公司 | Pressing jig and equipment |
| CN202678287U (en) * | 2012-07-16 | 2013-01-16 | 季俊彦 | Window pressing plate for welding half-etching lead wire frame of lead wire |
| CN204289396U (en) * | 2014-10-01 | 2015-04-22 | 河北华整实业有限公司 | Full compression joint type igbt chip positioner body |
| CN105140170A (en) * | 2015-08-31 | 2015-12-09 | 北京航天控制仪器研究所 | Multi-ceramic-tube-case sealing cap clamping tool capable of achieving fine alignment |
| CN205488042U (en) * | 2016-03-18 | 2016-08-17 | 无锡华润安盛科技有限公司 | Bonded clamp plate |
| CN106981433A (en) * | 2017-03-31 | 2017-07-25 | 中国电子科技集团公司第二十九研究所 | A kind of clamping device and method for automatic lead bonder |
-
2018
- 2018-10-18 CN CN201811217696.8A patent/CN111081566B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202631897U (en) * | 2012-06-28 | 2012-12-26 | 北京京东方光电科技有限公司 | Pressing jig and equipment |
| CN202678287U (en) * | 2012-07-16 | 2013-01-16 | 季俊彦 | Window pressing plate for welding half-etching lead wire frame of lead wire |
| CN204289396U (en) * | 2014-10-01 | 2015-04-22 | 河北华整实业有限公司 | Full compression joint type igbt chip positioner body |
| CN105140170A (en) * | 2015-08-31 | 2015-12-09 | 北京航天控制仪器研究所 | Multi-ceramic-tube-case sealing cap clamping tool capable of achieving fine alignment |
| CN205488042U (en) * | 2016-03-18 | 2016-08-17 | 无锡华润安盛科技有限公司 | Bonded clamp plate |
| CN106981433A (en) * | 2017-03-31 | 2017-07-25 | 中国电子科技集团公司第二十九研究所 | A kind of clamping device and method for automatic lead bonder |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112164854A (en) * | 2020-08-24 | 2021-01-01 | 扬州船用电子仪器研究所(中国船舶重工集团公司第七二三研究所) | Multifunctional integrated tool for assembling, positioning and sintering microstrip substrate |
| CN112164854B (en) * | 2020-08-24 | 2021-07-06 | 扬州船用电子仪器研究所(中国船舶重工集团公司第七二三研究所) | Multifunctional integrated tool for assembling, positioning and sintering microstrip substrate |
| CN114156215A (en) * | 2022-02-09 | 2022-03-08 | 南通泓金贝电子科技有限公司 | Automatic sintering equipment for diode element |
| CN114156215B (en) * | 2022-02-09 | 2022-04-22 | 南通泓金贝电子科技有限公司 | Automatic sintering equipment for diode element |
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| CN111081566B (en) | 2021-07-13 |
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