CN111063647A - System and method for placing and taking wafer on vacuum chuck by Bernoulli manipulator - Google Patents
System and method for placing and taking wafer on vacuum chuck by Bernoulli manipulator Download PDFInfo
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- CN111063647A CN111063647A CN201911116850.7A CN201911116850A CN111063647A CN 111063647 A CN111063647 A CN 111063647A CN 201911116850 A CN201911116850 A CN 201911116850A CN 111063647 A CN111063647 A CN 111063647A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25B—TOOLS OR BENCH DEVICES NOT OTHERWISE PROVIDED FOR, FOR FASTENING, CONNECTING, DISENGAGING OR HOLDING
- B25B11/00—Work holders not covered by any preceding group in the subclass, e.g. magnetic work holders, vacuum work holders
- B25B11/005—Vacuum work holders
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17D—PIPE-LINE SYSTEMS; PIPE-LINES
- F17D1/00—Pipe-line systems
- F17D1/02—Pipe-line systems for gases or vapours
- F17D1/04—Pipe-line systems for gases or vapours for distribution of gas
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17D—PIPE-LINE SYSTEMS; PIPE-LINES
- F17D3/00—Arrangements for supervising or controlling working operations
- F17D3/01—Arrangements for supervising or controlling working operations for controlling, signalling, or supervising the conveyance of a product
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Abstract
The invention discloses a system and a method for placing and taking a wafer on a vacuum chuck by a Bernoulli manipulator, and belongs to the field of semiconductor wafer processing. This system includes bernoulli manipulator, vacuum chuck and gas circuit, the gas circuit includes first pipeline and second pipeline, wherein: one end of the first pipeline is connected with a vacuum, the other end of the first pipeline is connected with the vacuum chuck, and a first pneumatic valve is arranged on the first pipeline; one end of the second pipeline is connected with the nitrogen, the other end of the second pipeline is connected with the vacuum chuck, and a second pneumatic valve is arranged on the second pipeline; be provided with first bypass pipeline on the first pipeline, the one end and the atmosphere of first bypass pipeline are connected, and the other end is connected on the first pipeline between first pneumatic valve and vacuum chuck, be provided with the third pneumatic valve on the first bypass pipeline. The invention has accurate position for placing and taking the wafer, reduces the warping degree of the wafer and reduces the fragment rate of the wafer.
Description
Technical Field
The invention relates to the field of semiconductor wafer processing, in particular to a system and a method for placing and taking a wafer on a vacuum chuck by a Bernoulli manipulator.
Background
A wafer is a silicon wafer used for manufacturing a silicon semiconductor integrated circuit, is a basic material for manufacturing a semiconductor chip, and is called a wafer because its shape is circular.
The bernoulli principle can be expressed graphically as: in the water flow or the air flow, if the speed is low, the pressure is high, and if the speed is high, the pressure is low. A bernoulli robot (chuck) is a robot that uses the bernoulli principle, and when gas (e.g., inert gas such as nitrogen) ejected from a gas jet of the robot encounters a surface (e.g., an upper surface, but may also be a lower surface, which is only exemplary) of a disk, the gas rapidly diffuses from the upper surface of the disk, so that the gas velocity at the upper surface of the disk is greater than that at the lower surface.
In the wafer processing process, the Bernoulli manipulator adsorbs the wafer by the Bernoulli principle, and releases the wafer after the wafer is placed on the vacuum chuck with the vacuum adsorption function. And simultaneously, the vacuum chuck adsorbs the wafer to the vacuum chuck through porous vacuum adsorption. And after the process is finished, the vacuum chuck stops vacuum adsorption, the Bernoulli manipulator adsorbs the wafer, and the wafer is taken down from the vacuum chuck and taken out of the process chamber.
The Bernoulli manipulator is mainly used for adsorbing wafers with the thickness less than 200um, and the wafers are crisp and fragile and have large warping degree. When the Bernoulli manipulator puts the wafer on the vacuum chuck, if the Bernoulli manipulator puts the wafer on the vacuum chuck firstly, and then the vacuum chuck starts vacuum adsorption, the wafer is easy to slide, the deviation occurs at the placing position, and the uniformity of the process effect of the whole wafer is influenced. If the vacuum chuck is firstly started for vacuum adsorption, the Bernoulli manipulator puts the wafer on the vacuum chuck, the warping degree of the wafer is easily increased, and the wafer is easily broken.
When the bernoulli robot removes the wafer from the vacuum chuck, although the vacuum chuck has stopped vacuum chucking, there is still surface tension between the wafer and the vacuum chuck, causing the wafer to be also chucked on the vacuum chuck by surface tension. When the bernoulli robot is used to adsorb a wafer, one condition is that the adsorption force of the bernoulli robot is less than the surface tension, resulting in failure of the bernoulli robot to adsorb the wafer. The second situation is that the suction force of the bernoulli manipulator is slightly larger than the surface tension, the bernoulli manipulator can take away the wafer, but the warping degree of the wafer is increased, and the performance of the wafer is affected. The third situation is that the adsorption force of the bernoulli robot is much greater than the surface tension, so that the wafer chipping rate during the wafer suction process is significantly increased.
Disclosure of Invention
In order to solve the technical problems, the invention provides a system and a method for placing and taking wafers on a vacuum chuck by a Bernoulli manipulator.
The technical scheme provided by the invention is as follows:
a system for placing and taking a wafer on a vacuum chuck by a Bernoulli manipulator, comprising a Bernoulli manipulator, a vacuum chuck and a gas path, wherein the gas path comprises a first pipeline and a second pipeline, and wherein:
one end of the first pipeline is connected with a vacuum, the other end of the first pipeline is connected with the vacuum chuck, and a first pneumatic valve is arranged on the first pipeline;
one end of the second pipeline is connected with the nitrogen, the other end of the second pipeline is connected with the vacuum chuck, and a second pneumatic valve is arranged on the second pipeline;
be provided with first bypass pipeline on the first pipeline, the one end and the atmosphere of first bypass pipeline are connected, and the other end is connected on the first pipeline between first pneumatic valve and vacuum chuck, be provided with the third pneumatic valve on the first bypass pipeline.
Furthermore, a second bypass pipeline is arranged on the first pipeline, one end of the second bypass pipeline is connected with the atmosphere, the other end of the second bypass pipeline is connected to the first pipeline between the first pneumatic valve and the vacuum chuck, and a differential pressure gauge is arranged on the second bypass pipeline.
Further, a gas flowmeter is arranged on the second pipeline.
Further, the first and second pneumatic valves are normally closed valves, and the third pneumatic valve is a normally open valve.
Furthermore, the first pneumatic valve is connected with a first dry gas pipeline for controlling the opening and closing of the first pneumatic valve, the second pneumatic valve is connected with a second dry gas pipeline for controlling the opening and closing of the second pneumatic valve, and the third pneumatic valve is connected with a third dry gas pipeline for controlling the opening and closing of the third pneumatic valve.
Furthermore, the Bernoulli manipulator comprises a sheet fork and a manipulator body, wherein a plurality of nitrogen outlets are formed in the sheet fork, and the sheet fork is connected with the manipulator body through a turnover mechanism.
Further, the vacuum chuck is a porous vacuum adsorption chuck.
A method for taking and putting wafers by using the system for taking and putting wafers on the vacuum chuck is characterized in that before the Bernoulli manipulator puts the wafers on the vacuum chuck, a first pneumatic valve, a second pneumatic valve and a third pneumatic valve are in a closed state;
the process of placing a wafer onto a vacuum chuck by a bernoulli robot comprises:
the Bernoulli manipulator with the wafer adsorbed below reaches the upper part of the vacuum chuck, the Bernoulli manipulator is closed, the wafer is released, the first pneumatic valve is opened, vacuum acts on the vacuum chuck through the first pipeline, and the wafer is adsorbed on the vacuum chuck;
before the Bernoulli manipulator takes the wafer off the vacuum chuck, the first pneumatic valve is in an open state, and the second pneumatic valve and the third pneumatic valve are in a closed state;
the process of the bernoulli robot removing the wafer from the vacuum chuck comprises:
the Bernoulli manipulator reaches the upper part of the vacuum chuck;
closing the first pneumatic valve and the vacuum no longer acts on the vacuum chuck;
opening a third pneumatic valve, communicating the interior of the vacuum chuck with the atmosphere, and enabling the pressure in the vacuum chuck to be the same as the atmospheric pressure;
opening a second pneumatic valve, introducing nitrogen with a preset flow into a second pipeline, allowing the nitrogen to enter the vacuum chuck through the second pipeline, and enabling the nitrogen to upwards push a wafer to remove the surface tension between the wafer and the vacuum chuck;
and opening the Bernoulli manipulator to adsorb the wafer on the Bernoulli manipulator.
Further, after the third pneumatic valve is opened, the second pneumatic valve is opened again after the reading of the differential pressure gauge is close to 0.
Further, the placing of the wafer onto the vacuum chuck by the bernoulli robot further comprises:
a wafer is absorbed by a blade fork of the Bernoulli manipulator from the bottom surface of the wafer;
and the turnover mechanism of the Bernoulli manipulator rotates to turn the wafer below the wafer fork.
The invention has the following beneficial effects:
when the wafer is placed on the vacuum chuck through the Bernoulli manipulator, the position of the wafer is not deviated, the uniformity of the process effect of the whole wafer is good, the warping degree of the wafer is reduced, and the wafer is not easy to break. When the wafer is taken down from the vacuum chuck through the Bernoulli manipulator, the Bernoulli manipulator cannot absorb the wafer and fails, the warping degree of the wafer is reduced, and the position of the wafer on the Bernoulli manipulator does not deviate; the fragmentation rate of the wafer is reduced.
Drawings
FIG. 1 is a schematic view of a gas circuit;
fig. 2 is a schematic view of a bernoulli robot.
Detailed Description
In order to make the technical problems, technical solutions and advantages of the present invention more apparent, the following detailed description is given with reference to the accompanying drawings and specific embodiments.
In one aspect, an embodiment of the present invention provides a system for placing and taking a wafer on a vacuum chuck by a bernoulli robot, which includes a bernoulli robot, a vacuum chuck, and a gas path. As shown in fig. 1, the gas circuit includes a first pipe 1 and a second pipe 2, wherein:
one end of the first pipeline 1 is connected with vacuum, the other end is connected with a vacuum chuck 3, and a first pneumatic valve 4 is arranged on the first pipeline 1.
The first pipeline is connected with the vacuum, which means that the first pipeline is connected with various devices or systems capable of providing vacuum, and the invention does not limit the structural form of the devices or systems for providing vacuum.
The first pipeline is connected with the vacuum chuck, namely connected with the inside of the vacuum chuck, and the vacuum chuck is provided with a porous structure communicated with the inside of the vacuum chuck and the like. When the first pneumatic valve is opened, vacuum acts on the inside of the vacuum chuck through the first pipeline, so that the pressure inside the vacuum chuck is lower than the pressure outside the vacuum chuck, and a suction force (also called as vacuum force in the invention) towards the inside of the vacuum chuck is generated through a porous structure and the like, so that the wafer is adsorbed on the vacuum chuck.
One end of the second pipeline 2 is connected with the nitrogen, the other end of the second pipeline is connected with the vacuum chuck 3, and the second pipeline 2 is provided with a second pneumatic valve 5.
The second pipe is connected to the nitrogen gas, which means that the second pipe is connected to various devices or systems capable of supplying the nitrogen gas, and the present invention does not limit the structural form of the devices or systems for supplying the nitrogen gas, and the second pipe is connected to the vacuum chuck, which means that the second pipe is connected to the inside of the vacuum chuck.
The first pipeline 1 is provided with a first bypass pipeline 6, one end of the first bypass pipeline 6 is connected with the atmosphere, the other end of the first bypass pipeline is connected to the first pipeline 1 between the first pneumatic valve 4 and the vacuum chuck 3, and the first bypass pipeline 6 is provided with a third pneumatic valve 7.
The first bypass line is connected to atmosphere, which means that the first bypass line is connected to atmosphere of the environment where the vacuum chuck is located. When the third pneumatic valve is opened, the interior of the vacuum chuck is communicated with the atmosphere of the environment, and the pressure difference between the interior and the exterior of the vacuum chuck, which is caused by vacuum, is eliminated. In one embodiment of the invention, the vacuum chuck is within the process chamber and the first bypass line is connected to the atmosphere within the process chamber.
In the present invention, the process of placing a wafer on a vacuum chuck by a bernoulli robot is referred to as a "wafer placing process", and the process of removing a wafer from a vacuum chuck by a bernoulli robot is referred to as a "wafer taking process".
The film placing process comprises the following steps:
1. the bernoulli robot takes the wafer out of the storage device such as a wafer storage box or the like or in the previous process, and enables the wafer to be adsorbed below the bernoulli robot. Before the sheet discharging process, the first pneumatic valve, the second pneumatic valve and the third pneumatic valve are in a closed state.
The film placing process comprises the following steps:
2. the bernoulli robot, which adsorbs the wafer, reaches above the vacuum chuck.
In this step, the reaching of the bernoulli manipulator above the vacuum chuck means reaching a position above the vacuum chuck where the wafer is placed, that is, a wafer placing position, and if the vacuum chuck is in the process chamber, the manipulator enters the process chamber to reach the wafer placing position.
3. And closing the Bernoulli manipulator, releasing the wafer, opening the first pneumatic valve, and enabling vacuum to act on the vacuum chuck through the first pipeline so as to adsorb the wafer on the vacuum chuck.
In this step, closing the bernoulli manipulator means closing a nitrogen valve on the bernoulli manipulator, so that the nitrogen is not ejected from a nitrogen outlet of the bernoulli manipulator any longer, and the bernoulli effect is not generated, so that the wafer falls off from the manipulator.
In order to open the first pneumatic valve when the nitrogen valve on the Bernoulli manipulator is closed, the nitrogen valve and the first pneumatic valve of the manipulator are controlled in a closed loop. The first pneumatic valve is automatically opened as soon as the nitrogen valve of the manipulator is closed, and the first pneumatic valve is automatically opened in the process that the wafer falls off from the manipulator.
In the prior art, if the bernoulli manipulator firstly puts the wafer on the vacuum chuck, and then the vacuum chuck starts vacuum adsorption, the wafer is easy to slide, the placing position has deviation, and the uniformity of the process effect of the whole wafer is influenced. If the vacuum chuck is firstly started for vacuum adsorption, the Bernoulli manipulator puts the wafer on the vacuum chuck, the warping degree of the wafer is easily increased, and the wafer is easily broken.
According to the invention, when the Bernoulli manipulator releases the wafer, the vacuum chuck is opened immediately for vacuum adsorption, and the wafer is quickly adsorbed by the vacuum chuck immediately after the Bernoulli manipulator is separated from the wafer, so that the slip sheet phenomenon easily occurring on the wafer is prevented, and the problem of increasing the warping degree of the wafer easily is solved. The position that the wafer was placed can not appear the deviation, and the homogeneity of the technological effect of whole wafer is good, has reduced the perk of wafer simultaneously, and the wafer is difficult broken.
4. The wafer is subjected to process treatment on the vacuum chuck, the wafer needs to be taken down from the vacuum chuck after the process treatment, the first pneumatic valve is in an open state, and the second pneumatic valve and the third pneumatic valve are in a closed state after the process treatment.
The slice taking process comprises the following steps:
5. the bernoulli robot reaches above the vacuum chuck in preparation for taking the wafer down.
6. The first pneumatic valve is closed, vacuum no longer acts on the vacuum chuck, the vacuum chuck stops vacuum adsorption, no vacuum adsorption force is applied to the wafer, but surface tension still exists between the wafer and the vacuum chuck, so that the wafer is also adsorbed on the vacuum chuck through the surface tension, and at the moment, if the Bernoulli manipulator is directly used for adsorbing the wafer, the problem existing in the background technology can occur.
7. And opening the third pneumatic valve to communicate the inside of the vacuum chuck with the atmosphere, so that the pressure inside the vacuum chuck is the same as the atmospheric pressure, and removing the pressure difference between the inside and the outside of the vacuum chuck caused by vacuum. In one embodiment of the invention, the vacuum chuck is within the process chamber, and the interior of the vacuum chuck is connected to the atmosphere within the process chamber.
8. And opening a second pneumatic valve, introducing nitrogen with a preset flow into the second pipeline, allowing the nitrogen to enter the vacuum chuck through the second pipeline, and enabling the nitrogen to upwards jack the wafer to remove the surface tension between the wafer and the vacuum chuck.
9. And opening a nitrogen valve of the Bernoulli manipulator to adsorb the wafer on the Bernoulli manipulator.
The various opening and closing operations described above are preferably performed by a controller.
In the prior art, when a Bernoulli manipulator sucks a lower wafer from a vacuum chuck, the failure of the Bernoulli manipulator in sucking the wafer is easy to occur due to the surface tension existing between the wafer and the vacuum chuck; although the wafer is successfully sucked, the warping degree of the wafer is increased; the position of the wafer on the Bernoulli manipulator deviates; the wafer chipping rate is significantly increased.
The interior of the vacuum chuck is communicated with the atmosphere, the pressure difference between the interior and the exterior of the vacuum chuck caused by vacuum is removed, then a proper amount of nitrogen is introduced into the vacuum chuck, the wafer is pushed upwards, the surface tension between the wafer and the vacuum chuck is removed, and the wafer is sucked by the Bernoulli manipulator, so that a series of problems caused by the surface tension between the wafer and the vacuum chuck are solved.
In conclusion, when the wafer is placed on the vacuum chuck through the Bernoulli manipulator, the wafer placing position cannot deviate, the uniformity of the process effect of the whole wafer is good, the warping degree of the wafer is reduced, and the wafer is not easy to break. When the wafer is taken down from the vacuum chuck through the Bernoulli manipulator, the Bernoulli manipulator cannot absorb the wafer and fails, the warping degree of the wafer is reduced, and the position of the wafer on the Bernoulli manipulator does not deviate; the fragmentation rate of the wafer is reduced.
The invention also arranges a second branch pipeline 8 on the first pipeline 1, one end of the second branch pipeline 8 is connected with the atmosphere, the other end is connected on the first pipeline 4 between the first pneumatic valve 4 and the vacuum chuck 3, and a differential pressure gauge 9 is arranged on the second branch pipeline 8. Based on the second bypass pipeline, after the reading of the differential pressure gauge is close to 0 and the pressure in the vacuum chuck is the same as the ambient pressure after the third pneumatic valve is opened, the second pneumatic valve is opened.
The second pipeline 2 is provided with a gas flowmeter 10, and the flow of the nitrogen of the top wafer is controlled by the gas flowmeter.
As a modification of the present invention, the first and second air-operated valves 4 and 5 are normally closed valves, and the third air-operated valve 7 is a normally open valve. The purpose of the third pneumatic valve selecting the normally open valve is that if the machine station has problems, once the power is cut off or the air is cut off, the valve is automatically opened, the pressure of the vacuum chuck is ensured to be the same as the ambient atmospheric pressure, and the injury of workers can not be caused.
The first pneumatic valve 4 of the present invention is connected to a first dry gas line (CDA-1)11 for controlling the opening and closing of the first pneumatic valve 4, the second pneumatic valve 5 is connected to a second dry gas line (CDA-2)12 for controlling the opening and closing of the second pneumatic valve 5, and the third pneumatic valve 7 is connected to a third dry gas line (CDA-3)13 for controlling the opening and closing of the third pneumatic valve 7.
Illustratively, the first pneumatic valve is a normally closed valve, the dry gas (CDA) in the first dry gas line (CDA-1) is a control gas for controlling the first pneumatic valve, the CDA is introduced into the CDA-1, the first pneumatic valve is opened, the CDA of the CDA-1 is closed, and the first pneumatic valve is closed. The control process of the normally closed second pneumatic valve is similar to that of the first pneumatic valve. The third pneumatic valve is a normally open valve, the dry gas (CDA) in the third dry gas pipeline (CDA-3) is control gas for controlling the third pneumatic valve, the CDA is introduced into the CDA-3, the third pneumatic valve is closed, the CDA of the CDA-3 is closed, and the third pneumatic valve is opened.
The bernoulli manipulator of the invention can be in various structural forms, for example, as shown in fig. 2, the bernoulli manipulator comprises a sheet fork 14 and a manipulator body 15, a plurality of nitrogen outlets 16 are arranged on the sheet fork 14, and the sheet fork 14 is connected with the manipulator body 15 through a turnover mechanism 17. The number of the nitrogen outlets is preferably four, and the nitrogen sprayed from the four nitrogen outlets forms a Bernoulli effect to adsorb the wafer.
In wafer cassettes the wafers are typically held with the thick edge ring raised in the back side in contact with support structures in the cassette, with the back side facing down, in order to avoid wafer breakage due to thin area contact. The wafer is typically processed on its backside in a processing station, which requires placement with the backside up. Therefore, the wafer needs to be turned by 180 ° during the whole wafer transferring process.
According to the invention, the wafer fork of the Bernoulli manipulator is connected with the manipulator body through the turnover mechanism, so that the wafer fork can be turned over for 180 degrees, and then the wafer adsorbed on the wafer fork is driven to turn over, and the requirements of the whole wafer processing technology are met.
Based on the Bernoulli manipulator, before the Bernoulli manipulator puts the wafer on the vacuum chuck, when taking the wafer out of the storage box, the wafer is adsorbed by the sheet fork of the Bernoulli manipulator from the bottom surface of the wafer; and then the turnover mechanism of the Bernoulli manipulator rotates to turn the wafer below the wafer fork.
The vacuum chuck of the present invention is preferably a porous vacuum chuck.
The embodiment of the invention has the following advantages: 1. prevent the gleitbretter that the piece in-process caused, 2, prevent to put the warpage of piece in-process wafer appearance, 3, prevent to get the warpage of piece in-process wafer, 4, reduce the probability that the piece was got to the manipulator, 5, reduce the probability of wafer piece, 6, the board outage or the outage guarantees that vacuum chuck's pressure is the same with atmospheric pressure, avoids personnel's injury.
In another aspect, an embodiment of the present invention provides a method for placing and taking a wafer on and off a vacuum chuck by using the system for placing and taking a wafer on and off a vacuum chuck, where the method includes the following steps:
before the Bernoulli manipulator puts the wafer on the vacuum chuck, the first pneumatic valve, the second pneumatic valve and the third pneumatic valve are in a closed state, the wafer is adsorbed and taken out from a storage device such as a wafer storage box or the like or the previous working procedure through the Bernoulli manipulator, and the wafer is adsorbed below the Bernoulli manipulator.
The process of placing a wafer onto a vacuum chuck by a bernoulli robot (the placing process) includes:
step 1: the Bernoulli manipulator with the wafer adsorbed below reaches the upper part of the vacuum chuck, the Bernoulli manipulator is closed, the wafer is released, the first pneumatic valve is opened, vacuum acts on the vacuum chuck through the first pipeline, and the wafer is adsorbed on the vacuum chuck.
In this step, the reaching of the bernoulli manipulator above the vacuum chuck means reaching a position above the vacuum chuck where the wafer is placed, that is, a wafer placing position, and if the vacuum chuck is in the process chamber, the manipulator enters the process chamber to reach the wafer placing position.
In this step, closing the bernoulli manipulator means closing a nitrogen valve on the bernoulli manipulator, so that the nitrogen is not ejected from a nitrogen outlet of the bernoulli manipulator any longer, and the bernoulli effect is not generated, so that the wafer falls off from the manipulator.
In the prior art, if the bernoulli manipulator firstly puts the wafer on the vacuum chuck, and then the vacuum chuck starts vacuum adsorption, the wafer is easy to slide, the placing position has deviation, and the uniformity of the process effect of the whole wafer is influenced. If the vacuum chuck is firstly started for vacuum adsorption, the Bernoulli manipulator puts the wafer on the vacuum chuck, the warping degree of the wafer is easily increased, and the wafer is easily broken.
According to the invention, when the Bernoulli manipulator releases the wafer, the vacuum chuck is opened immediately for vacuum adsorption, and the wafer is quickly adsorbed by the vacuum chuck immediately after the Bernoulli manipulator is separated from the wafer, so that the slip sheet phenomenon easily occurring on the wafer is prevented, and the problem of increasing the warping degree of the wafer easily is solved. The position that the wafer was placed can not appear the deviation, and the homogeneity of the technological effect of whole wafer is good, has reduced the perk of wafer simultaneously, and the wafer is difficult broken.
The wafer is subjected to process treatment on the vacuum chuck, the wafer needs to be taken down from the vacuum chuck after the process treatment, before the wafer is taken down from the vacuum chuck by the Bernoulli manipulator, the first pneumatic valve is in an open state, and the second pneumatic valve and the third pneumatic valve are in a closed state;
the process of the bernoulli robot taking the wafer off the vacuum chuck (the wafer taking process) comprises:
step 2: the bernoulli robot reaches above the vacuum chuck in preparation for taking the wafer down.
And 3, closing the first pneumatic valve, and enabling the vacuum to not act on the vacuum chuck any more.
The vacuum chuck stops vacuum suction and no longer applies vacuum suction force to the wafer, but surface tension still exists between the wafer and the vacuum chuck, so that the wafer is still sucked on the vacuum chuck through the surface tension, and at the moment, if the Bernoulli mechanical arm is directly used for sucking the wafer, the problems existing in the background art can occur.
And 4, step 4: and opening the third pneumatic valve to communicate the inside of the vacuum chuck with the atmosphere, so that the pressure inside the vacuum chuck is the same as the atmospheric pressure, and removing the pressure difference between the inside and the outside of the vacuum chuck caused by vacuum. In one embodiment of the invention, the vacuum chuck is within the process chamber, and the interior of the vacuum chuck is connected to the atmosphere of the process chamber.
And 5: and opening a second pneumatic valve, introducing nitrogen with a preset flow into the second pipeline, allowing the nitrogen to enter the vacuum chuck through the second pipeline, and enabling the nitrogen to upwards jack the wafer to remove the surface tension between the wafer and the vacuum chuck.
Step 6: and opening a nitrogen valve of the Bernoulli manipulator to adsorb the wafer on the Bernoulli manipulator.
The various opening and closing operations described above are preferably performed by a controller.
In the prior art, when a Bernoulli manipulator sucks a lower wafer from a vacuum chuck, the failure of the Bernoulli manipulator in sucking the wafer is easy to occur due to the surface tension existing between the wafer and the vacuum chuck; although the wafer is successfully sucked, the warping degree of the wafer is increased; the position of the wafer on the Bernoulli manipulator deviates; the wafer chipping rate is significantly increased.
The interior of the vacuum chuck is communicated with the atmosphere, the pressure difference between the interior and the exterior of the vacuum chuck caused by vacuum is removed, then a proper amount of nitrogen is introduced into the vacuum chuck, the wafer is pushed upwards, the surface tension between the wafer and the vacuum chuck is removed, and the wafer is sucked by the Bernoulli manipulator, so that a series of problems caused by the surface tension between the wafer and the vacuum chuck are solved.
In conclusion, when the wafer is placed on the vacuum chuck through the Bernoulli manipulator, the wafer placing position cannot deviate, the uniformity of the process effect of the whole wafer is good, the warping degree of the wafer is reduced, and the wafer is not easy to break. When the wafer is taken down from the vacuum chuck through the Bernoulli manipulator, the Bernoulli manipulator cannot absorb the wafer and fails, the warping degree of the wafer is reduced, and the position of the wafer on the Bernoulli manipulator does not deviate; the fragmentation rate of the wafer is reduced.
If the second bypass pipeline is included, after the third pneumatic valve is opened, the second pneumatic valve is opened again when the reading of the differential pressure gauge is close to 0 and the pressure inside the vacuum chuck is the same as the pressure of the environment.
If the bernoulli robot comprises the turning mechanism, before the bernoulli robot places the wafer on the vacuum chuck, the method further comprises the step of taking the wafer out of the wafer storage box by the bernoulli robot, wherein the step comprises the following steps:
the blade fork of the bernoulli robot attracts the wafer from the bottom surface of the wafer.
And the turnover mechanism of the Bernoulli manipulator rotates to turn the wafer below the wafer fork.
According to the invention, the wafer fork of the Bernoulli manipulator is connected with the manipulator body through the turnover mechanism, so that the wafer fork can be turned over for 180 degrees, and then the wafer adsorbed on the wafer fork is driven to turn over, and the requirements of the whole wafer processing technology are met.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. The system for placing and taking wafers on and from a vacuum chuck by a Bernoulli manipulator is characterized by comprising the Bernoulli manipulator, the vacuum chuck and a gas circuit, wherein the gas circuit comprises a first pipeline and a second pipeline, and the first pipeline and the second pipeline are respectively connected with the first pipeline and the second pipeline, wherein:
one end of the first pipeline is connected with a vacuum, the other end of the first pipeline is connected with the vacuum chuck, and a first pneumatic valve is arranged on the first pipeline;
one end of the second pipeline is connected with the nitrogen, the other end of the second pipeline is connected with the vacuum chuck, and a second pneumatic valve is arranged on the second pipeline;
be provided with first bypass pipeline on the first pipeline, the one end and the atmosphere of first bypass pipeline are connected, and the other end is connected on the first pipeline between first pneumatic valve and vacuum chuck, be provided with the third pneumatic valve on the first bypass pipeline.
2. The bernoulli robot system for placing and removing wafers on and from a vacuum chuck as claimed in claim 1, wherein a second bypass line is provided on the first line, one end of the second bypass line is connected to atmosphere, the other end of the second bypass line is connected to the first line between the first pneumatic valve and the vacuum chuck, and a differential pressure gauge is provided on the second bypass line.
3. The bernoulli robot wafer placing and retrieving system on a vacuum chuck as claimed in claim 2, wherein a gas flow meter is provided on the second conduit.
4. The bernoulli robot system for placing and retrieving wafers on a vacuum chuck as claimed in any one of claims 1 to 3, wherein the first and second pneumatic valves are normally closed valves and the third pneumatic valve is a normally open valve.
5. The system of claim 4, wherein the first pneumatic valve is connected to a first dry gas line that controls the opening and closing of the first pneumatic valve, the second pneumatic valve is connected to a second dry gas line that controls the opening and closing of the second pneumatic valve, and the third pneumatic valve is connected to a third dry gas line that controls the opening and closing of the third pneumatic valve.
6. The system for placing and taking a wafer on and off a vacuum chuck of a bernoulli robot as claimed in any one of claims 1 to 3, wherein the bernoulli robot comprises a wafer fork and a robot body, the wafer fork is provided with a plurality of nitrogen outlets, and the wafer fork is connected with the robot body through a turnover mechanism.
7. The system of claim 6, wherein the vacuum chuck is a multi-aperture vacuum chuck.
8. A method of wafer handling using the system for wafer handling on a vacuum chuck of any of claims 1-7, wherein the first, second, and third pneumatic valves are in a closed state prior to the bernoulli robot placing the wafer on the vacuum chuck;
the process of placing a wafer onto a vacuum chuck by a bernoulli robot comprises:
the Bernoulli manipulator with the wafer adsorbed below reaches the upper part of the vacuum chuck, the Bernoulli manipulator is closed, the wafer is released, the first pneumatic valve is opened, vacuum acts on the vacuum chuck through the first pipeline, and the wafer is adsorbed on the vacuum chuck;
before the Bernoulli manipulator takes the wafer off the vacuum chuck, the first pneumatic valve is in an open state, and the second pneumatic valve and the third pneumatic valve are in a closed state;
the process of the bernoulli robot removing the wafer from the vacuum chuck comprises:
the Bernoulli manipulator reaches the upper part of the vacuum chuck;
closing the first pneumatic valve and the vacuum no longer acts on the vacuum chuck;
opening a third pneumatic valve, communicating the interior of the vacuum chuck with the atmosphere, and enabling the pressure in the vacuum chuck to be the same as the atmospheric pressure;
opening a second pneumatic valve, introducing nitrogen with a preset flow into a second pipeline, allowing the nitrogen to enter the vacuum chuck through the second pipeline, and enabling the nitrogen to upwards push a wafer to remove the surface tension between the wafer and the vacuum chuck;
and opening the Bernoulli manipulator to adsorb the wafer on the Bernoulli manipulator.
9. The method of claim 8, wherein after the third pneumatic valve is opened, the second pneumatic valve is opened after the reading of the differential pressure gauge approaches 0.
10. The method of claim 8 or 9, wherein the bernoulli robot placing the wafer onto the vacuum chuck further comprises:
a wafer is absorbed by a blade fork of the Bernoulli manipulator from the bottom surface of the wafer;
and the turnover mechanism of the Bernoulli manipulator rotates to turn the wafer below the wafer fork.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911116850.7A CN111063647A (en) | 2019-11-15 | 2019-11-15 | System and method for placing and taking wafer on vacuum chuck by Bernoulli manipulator |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911116850.7A CN111063647A (en) | 2019-11-15 | 2019-11-15 | System and method for placing and taking wafer on vacuum chuck by Bernoulli manipulator |
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| CN111063647A true CN111063647A (en) | 2020-04-24 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116435244A (en) * | 2023-04-13 | 2023-07-14 | 无锡宇邦半导体科技有限公司 | Pneumatic valve linkage monitoring device for wafer processing |
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2019
- 2019-11-15 CN CN201911116850.7A patent/CN111063647A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116435244A (en) * | 2023-04-13 | 2023-07-14 | 无锡宇邦半导体科技有限公司 | Pneumatic valve linkage monitoring device for wafer processing |
| CN116435244B (en) * | 2023-04-13 | 2023-11-17 | 无锡宇邦半导体科技有限公司 | Pneumatic valve linkage monitoring device for wafer processing |
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