TWI717675B - Substrate processing device - Google Patents

Substrate processing device Download PDF

Info

Publication number
TWI717675B
TWI717675B TW108100577A TW108100577A TWI717675B TW I717675 B TWI717675 B TW I717675B TW 108100577 A TW108100577 A TW 108100577A TW 108100577 A TW108100577 A TW 108100577A TW I717675 B TWI717675 B TW I717675B
Authority
TW
Taiwan
Prior art keywords
liquid
nozzle
pipe
substrate
processing
Prior art date
Application number
TW108100577A
Other languages
Chinese (zh)
Other versions
TW201935546A (en
Inventor
谷貴志
谷澤成規
秋山剛志
Original Assignee
日商斯庫林集團股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商斯庫林集團股份有限公司 filed Critical 日商斯庫林集團股份有限公司
Publication of TW201935546A publication Critical patent/TW201935546A/en
Application granted granted Critical
Publication of TWI717675B publication Critical patent/TWI717675B/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Abstract

本發明是一種對基板供給處理液的基板處理裝置，包括：噴嘴管（412），朝基板噴出處理液；送液管（411），連接於噴嘴管（412），並朝噴嘴管（412）輸送處理液；以及抽吸管（413），於較送液管（411）更靠下游側處連接於噴嘴管（412），並對噴嘴管（412）內的處理液進行抽吸。至少自抽吸管（413）的連接位置起下游側的噴嘴管（412）的內徑為抽吸管（413）的內徑以下。藉此，抽吸處理液的抽吸力充分地作用至噴嘴管內。因而，於噴嘴管內不易殘留處理液，從而能夠防止處理液的液滴下落。The present invention is a substrate processing device for supplying processing liquid to a substrate, comprising: a nozzle tube (412) that sprays the processing liquid toward the substrate; a liquid feeding tube (411) connected to the nozzle tube (412) and facing the nozzle tube (412) Transport processing liquid; and a suction pipe (413), which is connected to the nozzle pipe (412) at a downstream side than the liquid supply pipe (411), and sucks the processing liquid in the nozzle pipe (412). At least the inner diameter of the nozzle pipe (412) on the downstream side from the connection position of the suction pipe (413) is equal to or less than the inner diameter of the suction pipe (413). Thereby, the suction force for sucking the processing liquid sufficiently acts in the nozzle tube. Therefore, the treatment liquid is unlikely to remain in the nozzle tube, and it is possible to prevent droplets of the treatment liquid from falling.

Description

基板處理裝置Substrate processing device

本發明是有關於一種對基板表面噴出處理液的基板處理裝置。The invention relates to a substrate processing device that sprays a processing liquid onto the surface of a substrate.

先前，於半導體晶圓的製造步驟中，將光阻劑（photoresist）液、蝕刻（etching）液、清洗液、純水等各種處理液供給至基板表面。於所述處理液的供給處理中，存在當停止處理液的供給時，自處理液的噴出口產生非預想的液滴的下落，即所謂「滴液現象（dripping）」的情況。此種液滴下落成為基板表面的不均（nonuniformity）的原因，因此需要避免。專利文獻1中揭示了一種抑制所述液滴下落的基板處理裝置。Previously, in the manufacturing steps of semiconductor wafers, various processing solutions such as photoresist solution, etching solution, cleaning solution, and pure water were supplied to the surface of the substrate. In the supply process of the processing liquid, when the supply of the processing liquid is stopped, an unexpected drop of liquid droplets may occur from the ejection port of the processing liquid, that is, the so-called "dripping phenomenon". This drop of droplets is a cause of nonuniformity on the substrate surface, and therefore needs to be avoided. Patent Document 1 discloses a substrate processing apparatus that suppresses the falling of the droplets.

於專利文獻1記載的基板處理裝置中，於設置於藥液噴嘴的、自流入口至噴出口的路徑內連接有排氣口。於排氣口連接有負壓源。當藥液噴嘴通過基板上方時，使負壓源動作來進行抽吸動作。藉此，藥液噴嘴的流路內的藥液被抽吸，從而能夠防止藥液下落至基板。 [現有技術文獻] [專利文獻]In the substrate processing apparatus described in Patent Document 1, an exhaust port is connected in a path from the inflow port to the ejection port provided in the chemical liquid nozzle. A negative pressure source is connected to the exhaust port. When the chemical liquid nozzle passes above the substrate, the negative pressure source is operated to perform a suction operation. Thereby, the liquid medicine in the flow path of the liquid medicine nozzle is sucked, and it is possible to prevent the liquid medicine from falling onto the substrate. [Prior Art Literature] [Patent Literature]

[專利文獻1]日本專利特開2017-183568號公報[Patent Document 1] Japanese Patent Laid-Open No. 2017-183568

[發明所欲解決之課題] 但是，於專利文獻1記載的藥液噴嘴中，存在無法充分防止液滴下落的情況。例如，當進行抽吸動作時，於藥液噴嘴的流路路徑大於連接於排氣口的配管的內徑的情況下，有可能將殘存於藥液噴嘴內的流路內的處理液朝排氣口側抽吸的抽吸力不能充分發揮作用。[The problem to be solved by the invention] However, in the chemical liquid nozzle described in Patent Document 1, there are cases where the droplets cannot be sufficiently prevented from falling. For example, when performing a suction operation, when the flow path of the chemical liquid nozzle is larger than the inner diameter of the pipe connected to the exhaust port, the treatment liquid remaining in the flow path in the chemical liquid nozzle may be discharged toward The suction force of the suction on the port side cannot be fully exerted.

因此，本發明的目的在於提供一種防止液滴下落的基板處理裝置。 [解決課題之手段]Therefore, an object of the present invention is to provide a substrate processing apparatus that prevents droplets from falling. [Means to solve the problem]

為了解決所述課題，本申請案的第1發明為對基板供給處理液的基板處理裝置，且所述基板處理裝置包括：噴嘴管，朝所述基板噴出處理液；送液管，連接於所述噴嘴管，並朝所述噴嘴管輸送處理液；抽吸管，於較所述送液管更靠下游側處連接於所述噴嘴管，並對所述噴嘴管內的處理液進行抽吸；以及處理部，對所述基板進行保持，藉由自所述噴嘴管噴出的處理液來進行所述基板的處理，且至少自所述抽吸管的連接位置起下游側的所述噴嘴管的內徑為所述抽吸管的內徑以下。In order to solve the problem, the first invention of the present application is a substrate processing apparatus that supplies a processing liquid to a substrate, and the substrate processing apparatus includes a nozzle tube that sprays the processing liquid toward the substrate; and a liquid feeding tube connected to the substrate. The nozzle tube, and transports the processing liquid toward the nozzle tube; a suction tube, which is connected to the nozzle tube at a more downstream side than the liquid delivery tube, and sucks the processing liquid in the nozzle tube And a processing section for holding the substrate, processing the substrate by the processing liquid ejected from the nozzle pipe, and at least the nozzle pipe on the downstream side from the connection position of the suction pipe The inner diameter of is below the inner diameter of the suction tube.

本申請案的第2發明是根據第1發明的基板處理裝置，其中所述送液管的內徑為自所述抽吸管的連接位置起上游側的所述噴嘴管的內徑以下。The second invention of the present application is the substrate processing apparatus according to the first invention, wherein the inner diameter of the liquid feeding pipe is equal to or less than the inner diameter of the nozzle pipe on the upstream side from the connection position of the suction pipe.

本申請案的第3發明是根據第1發明或第2發明的基板處理裝置，其中自所述抽吸管的連接位置起下游側的所述噴嘴管的內徑小於自所述連接位置起上游側的內徑。The third invention of the present application is the substrate processing apparatus according to the first invention or the second invention, wherein the inner diameter of the nozzle pipe on the downstream side from the connection position of the suction pipe is smaller than that of the upstream side from the connection position The inner diameter of the side.

本申請案的第4發明是根據第1發明或第2發明的基板處理裝置，其中所述噴嘴管的內徑、所述送液管的內徑、及所述抽吸管的內徑為相同。The fourth invention of this application is the substrate processing apparatus according to the first invention or the second invention, wherein the inner diameter of the nozzle tube, the inner diameter of the liquid feeding tube, and the inner diameter of the suction tube are the same .

本申請案的第5發明是根據第1發明至第4發明中的任一基板處理裝置，其包括：噴射器，對所述抽吸管內進行抽吸；開閉閥，對連接所述抽吸管與所述噴射器的路徑進行開閉；以及流體箱，與所述處理部鄰接地配置，收容處理液相關設備，且所述開閉閥配置於所述流體箱附近。The fifth invention of the present application is a substrate processing apparatus according to any one of the first invention to the fourth invention, which includes: an ejector that sucks the inside of the suction pipe; an opening and closing valve that connects the suction pipe The pipe and the path of the ejector are opened and closed; and a fluid tank is arranged adjacent to the processing part to accommodate processing liquid related equipment, and the on-off valve is arranged near the fluid tank.

本申請案的第6發明是根據第1發明至第5發明中的任一基板處理裝置，其中所述處理液為發泡狀態的液體。The sixth invention of the present application is a substrate processing apparatus according to any one of the first to fifth inventions, wherein the processing liquid is a liquid in a foamed state.

本申請案的第7發明是根據第1發明至第6發明中的任一基板處理裝置，其中所述送液管兼用作對所述噴嘴管內的處理液進行抽吸的管。The seventh invention of the present application is a substrate processing apparatus according to any one of the first to sixth inventions, wherein the liquid feeding pipe also serves as a pipe for sucking the processing liquid in the nozzle pipe.

本申請案的第8發明是根據第7發明的基板處理裝置，其中自所述送液管被抽吸的處理液與自所述抽吸管被抽吸的處理液分別被回收至不同的收集罐。The eighth invention of the present application is the substrate processing apparatus according to the seventh invention, wherein the processing liquid sucked from the liquid feeding pipe and the processing liquid sucked from the suction pipe are respectively recovered to different collections tank.

本申請案的第9發明是根據第1發明至第8發明中的任一基板處理裝置，其中所述噴嘴管沿著鉛垂方向延伸。The ninth invention of this application is a substrate processing apparatus according to any one of the first to eighth inventions, wherein the nozzle tube extends in a vertical direction.

本申請案的第10發明是根據第1發明至第9發明中的任一基板處理裝置，其中於停止自所述送液管輸送處理液前，開始自所述抽吸管抽吸所述噴嘴管內的處理液。 [發明的效果]The tenth invention of the present application is a substrate processing apparatus according to any one of the first to ninth inventions, wherein the suction of the nozzle from the suction pipe is started before stopping the processing liquid from the liquid supply pipe Treatment liquid in the tube. [Effects of the invention]

根據本申請案的第1發明～第10發明，抽吸處理液的抽吸力能夠充分地作用至噴嘴管內。藉此，於噴嘴管內不易殘留處理液，從而能夠防止處理液的液滴下落。According to the first to tenth inventions of this application, the suction force for sucking the treatment liquid can sufficiently act in the nozzle tube. Thereby, the treatment liquid is less likely to remain in the nozzle tube, and it is possible to prevent droplets of the treatment liquid from falling.

尤其，根據本申請案的第2發明，能夠抑制噴嘴管內的處理液的流速。In particular, according to the second invention of the present application, it is possible to suppress the flow velocity of the processing liquid in the nozzle tube.

尤其，根據本申請案的第5發明，能夠縮短自開閉閥到噴嘴管的距離。藉此，抑制噴射器所產生的抽吸力的衰減，從而使抽吸力更容易作用至噴嘴管內。其結果，能夠進一步防止處理液的液滴下落。In particular, according to the fifth invention of the present application, the distance from the opening and closing valve to the nozzle tube can be shortened. Thereby, the attenuation of the suction force generated by the ejector is suppressed, so that the suction force can be more easily applied to the nozzle tube. As a result, it is possible to further prevent the droplets of the treatment liquid from falling.

尤其，根據本申請案的第7發明，能夠抽吸殘留於噴嘴管的上游側的處理液。其結果，能夠進一步防止處理液的液滴下落。In particular, according to the seventh invention of the present application, the processing liquid remaining on the upstream side of the nozzle tube can be sucked. As a result, it is possible to further prevent the droplets of the treatment liquid from falling.

尤其，根據本申請案的第10發明，於停止來自噴嘴管的處理液的噴出前，開始進行抽吸，藉此能夠逐漸減少處理液的噴出。其結果，於停止噴出後所抽吸的處理液的量變少，從而能夠更快地自噴嘴管內抽吸處理液。其結果，能夠防止剛剛停止噴出後的處理液的液滴下落。In particular, according to the tenth invention of the present application, before stopping the ejection of the processing liquid from the nozzle tube, the suction is started, whereby the ejection of the processing liquid can be gradually reduced. As a result, the amount of the processing liquid sucked after the ejection is stopped decreases, and the processing liquid can be sucked from the nozzle tube more quickly. As a result, it is possible to prevent the droplets of the processing liquid from falling immediately after the discharge is stopped.

＜1.基板處理裝置的整體構成＞ 圖1是本實施方式的基板處理裝置100的平面圖。基板處理裝置100是在半導體晶圓的製造步驟中，對圓板狀的基板W（矽基板）的表面進行處理的裝置。基板處理裝置100進行對基板W的表面供給處理液的液處理、以及使基板W的表面乾燥的乾燥處理。<1. Overall structure of substrate processing equipment> FIG. 1 is a plan view of a substrate processing apparatus 100 according to this embodiment. The substrate processing apparatus 100 is an apparatus that processes the surface of a disc-shaped substrate W (silicon substrate) in a manufacturing step of a semiconductor wafer. The substrate processing apparatus 100 performs liquid processing for supplying a processing liquid to the surface of the substrate W and drying processing for drying the surface of the substrate W.

基板處理裝置100包括：分度器（indexer）101、多個處理單元102、主搬運機器人103、及多個流體箱104。The substrate processing apparatus 100 includes an indexer 101, a plurality of processing units 102, a main transfer robot 103, and a plurality of fluid tanks 104.

分度器101是用於自外部搬入處理前的基板W，並且將處理後的基板W搬出至外部的部位。在分度器101中，配置有多個收容多個基板W的載體（carrier）。並且，分度器101包含省略圖示的移送機器人。移送機器人在分度器101內的載體與處理單元102或主搬運機器人103之間，移送基板W。再者，載體中，例如，可使用將基板W收納於密閉空間的公知的前端開啟式統集盒（Front Opening Unified Pod，FOUP）或標準機械界面（Standard Mechanical Inter Face，SMIF）盒、或者收納基板W與外部空氣接觸的開放式晶匣（Open Cassette，OC）。The indexer 101 is used to carry in the substrate W before processing from the outside and carry out the substrate W after processing to the outside. In the indexer 101, a plurality of carriers that accommodate a plurality of substrates W are arranged. In addition, the indexer 101 includes a transfer robot (not shown). The transfer robot transfers the substrate W between the carrier in the indexer 101 and the processing unit 102 or the main transfer robot 103. Furthermore, for the carrier, for example, a well-known front opening unified pod (FOUP) or Standard Mechanical Inter Face (SMIF) box that stores the substrate W in a closed space, or a storage box can be used. Open Cassette (OC) in which the substrate W is in contact with the outside air.

處理單元102是逐片地處理基板W的所謂單片式的處理部。多個處理單元102配置於主搬運機器人103的周圍。本實施方式中，配置在主搬運機器人103的周圍的四個處理單元102是沿高度方向積層成三層。即，本實施方式的基板處理裝置100總共包括十二台處理單元102。多個基板W是於各處理單元102中並列地處理。但是，基板處理裝置100所包括的處理單元102的數量並不限定於十二台，例如亦可以是二十四台、十六台、八台、四台、一台等。The processing unit 102 is a so-called single-chip processing section that processes the substrate W piece by piece. The plurality of processing units 102 are arranged around the main transport robot 103. In this embodiment, the four processing units 102 arranged around the main transport robot 103 are stacked in three layers in the height direction. That is, the substrate processing apparatus 100 of this embodiment includes twelve processing units 102 in total. A plurality of substrates W are processed in parallel in each processing unit 102. However, the number of processing units 102 included in the substrate processing apparatus 100 is not limited to twelve, for example, it may be twenty-four, sixteen, eight, four, one, etc.

主搬運機器人103是用於在分度器101與多個處理單元102之間搬運基板W的機構。主搬運機器人103例如包括保持基板W的手（hand）、以及使手移動的臂（arm）。主搬運機器人103自分度器101取出處理前的基板W，而搬運至處理單元102。另外，當處理單元102中的基板W的處理完成後，主搬運機器人103自所述處理單元102取出處理後的基板W，而搬運至分度器101。The main transport robot 103 is a mechanism for transporting the substrate W between the indexer 101 and the plurality of processing units 102. The main transfer robot 103 includes, for example, a hand that holds the substrate W, and an arm that moves the hand. The main transport robot 103 takes out the substrate W before processing from the indexer 101 and transports it to the processing unit 102. In addition, after the processing of the substrate W in the processing unit 102 is completed, the main transport robot 103 takes out the processed substrate W from the processing unit 102 and transports it to the indexer 101.

流體箱104與各處理單元102鄰接地配置。於流體箱104中，收納朝處理單元102供給處理液的供給源、以及連接於所述供給源的配管等處理液相關設備。處理液相關設備包括：導管、接頭、閥、流量計、調整器（regulator）、泵、及溫度調節器等。The fluid tank 104 is arranged adjacent to each processing unit 102. In the fluid tank 104, a supply source for supplying the processing liquid to the processing unit 102, and processing liquid-related equipment such as piping connected to the supply source are stored. Treatment fluid-related equipment includes: pipes, connectors, valves, flow meters, regulators, pumps, and temperature regulators.

＜2.處理單元的構成＞ 接著，對處理單元102的構成進行說明。以下，對基板處理裝置100所含的多個處理單元102之中的一個進行說明，但其它處理單元102亦具有同等的構成。<2. The structure of the processing unit> Next, the configuration of the processing unit 102 will be described. Hereinafter, one of the plurality of processing units 102 included in the substrate processing apparatus 100 will be described, but the other processing units 102 also have the same configuration.

圖2是處理單元102的平面圖。圖3是處理單元102的縱剖面圖。如圖2及圖3所示，處理單元102包括：腔室10、基板保持部20、旋轉機構30、處理液供給部40、處理液收集部50、及控制部60。FIG. 2 is a plan view of the processing unit 102. FIG. 3 is a longitudinal sectional view of the processing unit 102. As shown in FIGS. 2 and 3, the processing unit 102 includes a chamber 10, a substrate holding unit 20, a rotating mechanism 30, a processing liquid supply unit 40, a processing liquid collection unit 50, and a control unit 60.

腔室10是內置用於對基板W進行處理的處理空間11的框體。腔室10包括：側壁12、頂板部13、及底板部14。側壁12包圍處理空間11的側部。頂板部13覆蓋處理空間11的上部。底板部14覆蓋處理空間11的下部。基板保持部20、旋轉機構30、處理液供給部40、及處理液收集部50是收容於腔室10的內部。於側壁12的一部分設置有用於向腔室10內搬入基板W及自腔室10搬出基板W的搬入搬出口、以及使搬入搬出口開閉的擋板（shutter）（均省略圖示）。The chamber 10 is a housing in which a processing space 11 for processing the substrate W is built-in. The chamber 10 includes a side wall 12, a top plate portion 13, and a bottom plate portion 14. The side wall 12 surrounds the side of the processing space 11. The top plate portion 13 covers the upper part of the processing space 11. The bottom plate portion 14 covers the lower part of the processing space 11. The substrate holding unit 20, the rotating mechanism 30, the processing liquid supply unit 40, and the processing liquid collection unit 50 are housed in the chamber 10. A part of the side wall 12 is provided with a loading/unloading port for loading and unloading the substrate W into and out of the chamber 10, and a shutter for opening and closing the loading/unloading port (both not shown).

如圖3所示，於腔室10的頂板部13設置有風機過濾器單元（fan filter unit，FFU）15。風機過濾器單元15包括高效空氣（High Efficiency Particulate Air，HEPA）過濾器等集塵過濾器、以及使氣流產生的風機（fan）。當使風機過濾器單元15動作時，將設置基板處理裝置100的潔淨室（clean room）內的空氣擷取至風機過濾器單元15，藉由集塵過濾器而潔淨化，並供給至腔室10內的處理空間11。藉此，在腔室10內的處理空間11內，形成潔淨的空氣的向下流（down flow）。As shown in FIG. 3, a fan filter unit (FFU) 15 is provided on the ceiling portion 13 of the chamber 10. The fan filter unit 15 includes a dust collection filter such as a High Efficiency Particulate Air (HEPA) filter, and a fan that generates airflow. When the fan filter unit 15 is operated, the air in the clean room (clean room) where the substrate processing apparatus 100 is installed is taken to the fan filter unit 15, cleaned by the dust collecting filter, and supplied to the chamber 10 in the processing space 11. Thereby, in the processing space 11 in the chamber 10, a down flow of clean air is formed.

另外，於側壁12的下部的一部分上連接著排氣導管16。自風機過濾器單元15供給的空氣於腔室10的內部形成向下流之後，通過排氣導管16向腔室10的外部排出。In addition, an exhaust duct 16 is connected to a part of the lower part of the side wall 12. After the air supplied from the fan filter unit 15 flows downward in the chamber 10, it is discharged to the outside of the chamber 10 through the exhaust duct 16.

基板保持部20是於腔室10的內部，水平地（以法線朝向鉛垂方向的姿勢）保持基板W的機構。基板保持部20包括圓板狀的自旋底座（spin base）21及多個夾持銷（chuck pin）22。多個夾持銷22沿自旋底座21的上表面的外周部，以等角度間隔而設置。基板W在使形成圖案的被處理面朝向上側的狀態下，保持於多個夾持銷22。各夾持銷22與基板W的周緣部的下表面及外周端面接觸，從自旋底座21的上表面經由微小的空隙將基板W支撐於上方的位置。The substrate holding portion 20 is a mechanism for holding the substrate W horizontally (in a posture in which the normal line faces the vertical direction) inside the chamber 10. The substrate holding portion 20 includes a disk-shaped spin base 21 and a plurality of chuck pins 22. The plurality of clamping pins 22 are provided at equal angular intervals along the outer peripheral portion of the upper surface of the spin base 21. The substrate W is held by the plurality of clamping pins 22 in a state where the surface to be processed on which the pattern is formed faces the upper side. Each clamp pin 22 is in contact with the lower surface and the outer peripheral end surface of the peripheral edge portion of the substrate W, and supports the substrate W at an upper position from the upper surface of the spin base 21 through a minute gap.

於自旋底座21的內部設置有用於切換多個夾持銷22的位置的夾持銷切換機構23。夾持銷切換機構23是對多個夾持銷22，於保持基板W的保持位置與解除基板W的保持的解除位置之間進行切換。A clamping pin switching mechanism 23 for switching the positions of the plurality of clamping pins 22 is provided inside the spin base 21. The clamp pin switching mechanism 23 switches the plurality of clamp pins 22 between a holding position for holding the substrate W and a release position for releasing the holding of the substrate W.

旋轉機構30是用於使基板保持部20旋轉的機構。旋轉機構30是收容在設置於自旋底座21的下方的馬達蓋31的內部。如圖3中以虛線所示，旋轉機構30包括自旋馬達（spin motor）32及支撐軸33。支撐軸33沿鉛垂方向延伸，其下端部與自旋馬達32連接，並且上端部固定在自旋底座21的下表面的中央。當使自旋馬達32驅動時，支撐軸33以其軸芯330為中心而旋轉。並且，與支撐軸33一同，基板保持部20及基板保持部20所保持的基板W亦以軸芯330為中心而旋轉。The rotation mechanism 30 is a mechanism for rotating the substrate holding portion 20. The rotating mechanism 30 is housed in a motor cover 31 provided below the spin base 21. As shown by the dotted line in FIG. 3, the rotating mechanism 30 includes a spin motor 32 and a support shaft 33. The support shaft 33 extends in the vertical direction, its lower end is connected to the spin motor 32, and the upper end is fixed at the center of the lower surface of the spin base 21. When the spin motor 32 is driven, the support shaft 33 rotates with its shaft core 330 as the center. In addition, together with the support shaft 33, the substrate holding portion 20 and the substrate W held by the substrate holding portion 20 also rotate around the shaft core 330.

處理液供給部40是對基板保持部20所保持的基板W的上表面供給處理液的機構。處理液供給部40具有三根送液管411。如圖2所示，送液管411的一端被支撐於馬達42。送液管411以支撐於馬達42側的端部為基端部，並自該基端部沿水平方向延伸。三根送液管411分別於內部具有沿著水平方向延伸的、供處理液流通的流路。The processing liquid supply unit 40 is a mechanism that supplies the processing liquid to the upper surface of the substrate W held by the substrate holding unit 20. The processing liquid supply unit 40 has three liquid feeding pipes 411. As shown in FIG. 2, one end of the liquid feeding pipe 411 is supported by the motor 42. The liquid feeding tube 411 has an end supported on the motor 42 side as a base end, and extends in a horizontal direction from the base end. The three liquid feeding pipes 411 each have a flow path extending in a horizontal direction inside of the liquid feeding pipe 411 for the processing liquid to flow.

於送液管411的另一端設置有噴嘴管412。噴嘴管412具有與送液管411的流路連通的流路。噴嘴管412以其流路沿著鉛垂方向的姿勢設置於送液管411的另一端。A nozzle pipe 412 is provided at the other end of the liquid feeding pipe 411. The nozzle tube 412 has a flow path communicating with the flow path of the liquid feeding tube 411. The nozzle pipe 412 is provided at the other end of the liquid feeding pipe 411 with its flow path in the vertical direction.

於噴嘴管412連接有沿著水平方向延伸的抽吸管413。抽吸管413具有與噴嘴管412的流路連通的流路。抽吸管413的流路是沿水平方向延伸。抽吸管413是於停止自噴嘴管412朝基板W噴出處理液時，抽吸殘留於噴嘴管412內的處理液而防止液滴下落的所謂的回吸（suck back）用的配管。A suction pipe 413 extending in the horizontal direction is connected to the nozzle pipe 412. The suction pipe 413 has a flow path communicating with the flow path of the nozzle pipe 412. The flow path of the suction pipe 413 extends in the horizontal direction. The suction pipe 413 is a pipe for so-called suck back that sucks the processing liquid remaining in the nozzle pipe 412 to prevent droplets from falling when the processing liquid is stopped from the nozzle pipe 412 to the substrate W.

送液管411、噴嘴管412及抽吸管413例如由聚四氟乙烯（polytetrafluoroethylene，PTFE）等氟樹脂形成。再者，由送液管411、噴嘴管412、及抽吸管413構成的處理液噴出單元的數量並不限定於三根，亦可為一根、兩根、或四根以上。對送液管411、噴嘴管412及抽吸管413，下面將進行詳述。The liquid supply pipe 411, the nozzle pipe 412, and the suction pipe 413 are formed of, for example, a fluororesin such as polytetrafluoroethylene (PTFE). Furthermore, the number of processing liquid ejection units constituted by the liquid supply pipe 411, the nozzle pipe 412, and the suction pipe 413 is not limited to three, and may be one, two, or four or more. The liquid feeding pipe 411, the nozzle pipe 412, and the suction pipe 413 will be described in detail below.

送液管411、噴嘴管412及抽吸管413藉由馬達42的驅動，而如圖2中的箭頭所示那樣，以馬達42為中心，沿著水平方向各別地轉動。藉此，噴嘴管412於基板保持部20所保持的基板W的上方的處理位置與較處理液收集部50更靠外側的退避位置之間移動。當噴嘴管412配置於基板W上方的處理位置時，對送液管411供給處理液，並自送液管411朝噴嘴管412輸送。接著，自噴嘴管412向基板W的上表面噴出處理液。另外，於停止噴出時，殘留於噴嘴管412內的處理液被抽吸至抽吸管413。藉此，防止來自噴嘴管412的液滴下落。The liquid feeding pipe 411, the nozzle pipe 412, and the suction pipe 413 are driven by the motor 42 to individually rotate in the horizontal direction with the motor 42 as the center as shown by the arrow in FIG. Thereby, the nozzle tube 412 moves between the processing position above the substrate W held by the substrate holding portion 20 and the retreating position outside the processing liquid collecting portion 50. When the nozzle pipe 412 is arranged at a processing position above the substrate W, the processing liquid is supplied to the liquid feeding pipe 411 and is conveyed from the liquid feeding pipe 411 to the nozzle pipe 412. Next, the treatment liquid is ejected from the nozzle pipe 412 to the upper surface of the substrate W. In addition, when the ejection is stopped, the processing liquid remaining in the nozzle pipe 412 is sucked to the suction pipe 413. This prevents the droplets from the nozzle tube 412 from falling.

對各送液管411分別連接用以供給處理液的供液部。另外，對各抽吸管413連接對抽吸管413的流路內進行抽吸的噴射器。圖4是表示送液管411及抽吸管413的連接狀態的一例的圖。圖4中，示出作為處理液而供給SPM清洗液的情況的例子。SPM清洗液是將硫酸（H2 SO4 ）與過氧化氫水（H2 O2 ）混合而成的液體。SPM清洗液具有於配管內容易變成發泡狀態的性質。A liquid supply part for supplying a processing liquid is connected to each liquid supply pipe 411, respectively. In addition, an ejector that sucks the inside of the flow path of the suction pipe 413 is connected to each suction pipe 413. FIG. 4 is a diagram showing an example of the connection state of the liquid feeding tube 411 and the suction tube 413. FIG. 4 shows an example of a case where the SPM cleaning liquid is supplied as the processing liquid. SPM cleaning liquid is a liquid made by mixing sulfuric acid (H 2 SO 4 ) and hydrogen peroxide water (H 2 O 2 ). SPM cleaning fluid has the property of easily becoming foamed in the pipe.

供液部具有硫酸供給源451及過氧化氫水供給源452。連接於硫酸供給源451及過氧化氫水供給源452的各者的流路於下游側合流，並連接於送液管411。於與硫酸供給源451連接的流路中途設置有第一閥461。另外，於與過氧化氫水供給源452連接的流路中途設置有第二閥462。The liquid supply unit has a sulfuric acid supply source 451 and a hydrogen peroxide water supply source 452. The flow paths connected to each of the sulfuric acid supply source 451 and the hydrogen peroxide water supply source 452 merge on the downstream side and are connected to the liquid feeding pipe 411. A first valve 461 is provided in the middle of the flow path connected to the sulfuric acid supply source 451. In addition, a second valve 462 is provided in the middle of the flow path connected to the hydrogen peroxide water supply source 452.

當將第一閥461及第二閥462打開時，自硫酸供給源451排出的硫酸與自過氧化氫水供給源452排出的過氧化氫水合流，成為SPM清洗液而供給至送液管411。接著，自噴嘴管412向基板保持部20所保持的基板W的上表面噴出所述SPM清洗液。When the first valve 461 and the second valve 462 are opened, the sulfuric acid discharged from the sulfuric acid supply source 451 merges with the hydrogen peroxide water discharged from the hydrogen peroxide water supply source 452 to become an SPM cleaning solution and is supplied to the liquid feeding pipe 411 . Next, the SPM cleaning liquid is ejected from the nozzle pipe 412 to the upper surface of the substrate W held by the substrate holding portion 20.

另外，抽吸管413連接於噴射器453。於與噴射器453連接的路徑中途設置有作為開閉閥的第三閥463。當驅動噴射器453，並打開第三閥463時，抽吸管413的流路內的氣體朝向噴射器453被抽吸。所述抽吸力亦作用至噴嘴管412內，從而殘留於噴嘴管412的流路內的處理液被抽吸至抽吸管413的流路內。藉此，噴嘴管412內的處理液的殘留得以抑制。其結果，自噴嘴管412朝基板W的處理液的下滴得以抑制。In addition, the suction pipe 413 is connected to the ejector 453. A third valve 463 as an on-off valve is provided in the middle of the path connected to the ejector 453. When the ejector 453 is driven and the third valve 463 is opened, the gas in the flow path of the suction pipe 413 is sucked toward the ejector 453. The suction force is also applied to the nozzle tube 412, so that the processing liquid remaining in the flow path of the nozzle tube 412 is sucked into the flow path of the suction tube 413. Thereby, the remaining of the processing liquid in the nozzle tube 412 is suppressed. As a result, the dripping of the processing liquid onto the substrate W from the nozzle tube 412 is suppressed.

於抽吸管413的路徑中途連接有收集罐454。自噴嘴管412抽吸的處理液通過抽吸管413而被回收至收集罐454。再者，圖4中，收集罐454收容於流體箱104中，但亦可配置於流體箱104的外部。A collection tank 454 is connected to the middle of the path of the suction pipe 413. The treatment liquid sucked from the nozzle pipe 412 passes through the suction pipe 413 and is collected to the collection tank 454. Furthermore, in FIG. 4, the collection tank 454 is contained in the fluid tank 104, but it may also be arranged outside the fluid tank 104.

硫酸供給源451、過氧化氫水供給源452及噴射器453收容於流體箱104中。而且，第三閥463配置於流體箱104附近。所謂流體箱104附近例如是流體箱104內且流體箱104的內壁附近。如上所述，流體箱104與處理單元102鄰接地配置。因此，藉由於所述流體箱104的內壁側配置第三閥463，自第三閥463至噴嘴管412的抽吸管413的路徑長度進一步縮短。藉此，與抽吸管413的路徑長度長的情況相比，噴射器453所產生的抽吸力的衰減得以抑制，而容易使抽吸力作用至噴嘴管412內。其結果，能夠進一步防止處理液的液滴下落。再者，為了抑制抽吸力的衰減，較佳為將抽吸管413的路徑長度構成得更短。因此，第三閥463可配置於流體箱104的外部，亦可配置於處理單元102內。The sulfuric acid supply source 451, the hydrogen peroxide water supply source 452 and the ejector 453 are contained in the fluid tank 104. Furthermore, the third valve 463 is arranged near the fluid tank 104. The vicinity of the fluid tank 104 is, for example, the inside of the fluid tank 104 and the vicinity of the inner wall of the fluid tank 104. As described above, the fluid tank 104 and the processing unit 102 are arranged adjacently. Therefore, since the third valve 463 is disposed on the inner wall side of the fluid tank 104, the path length from the third valve 463 to the suction pipe 413 of the nozzle pipe 412 is further shortened. Thereby, compared with the case where the path length of the suction pipe 413 is long, the attenuation of the suction force generated by the ejector 453 is suppressed, and the suction force is easily applied to the nozzle pipe 412. As a result, it is possible to further prevent the droplets of the treatment liquid from falling. Furthermore, in order to suppress the attenuation of the suction force, it is preferable to configure the path length of the suction pipe 413 to be shorter. Therefore, the third valve 463 can be arranged outside the fluid tank 104 or in the processing unit 102.

雖將後述，但本實施方式中，於停止朝送液管411供給SPM清洗液之前，驅動噴射器453，而開始抽吸殘留於噴嘴管412內的處理液。藉此，能夠減少於處理液的噴出停止後所抽吸的處理液的量。而且，能夠更快地自噴嘴管412內抽吸處理液。Although it will be described later, in this embodiment, before the supply of the SPM cleaning liquid to the liquid feeding pipe 411 is stopped, the ejector 453 is driven to start sucking the processing liquid remaining in the nozzle pipe 412. Thereby, it is possible to reduce the amount of the processing liquid sucked after the discharge of the processing liquid is stopped. Moreover, the processing liquid can be sucked from the nozzle tube 412 more quickly.

另外，三根送液管411分別噴出相互不同的處理液。作為處理液的例子，除了所述的SPM清洗液之外，還可列舉SC1清洗液（氨水、過氧化氫水及純水的混合液）、SC2清洗液（鹽酸、過氧化氫水及純水的混合液）、DHF（Dilute Hydrofluoric Acid）清洗液（稀氫氟酸）、純水（去離子水）、臭氧水或包含臭氧水的混合液等。In addition, the three liquid feeding pipes 411 respectively eject different processing liquids. As an example of the treatment liquid, in addition to the aforementioned SPM cleaning liquid, SC1 cleaning liquid (a mixture of ammonia, hydrogen peroxide water and pure water), SC2 cleaning liquid (hydrochloric acid, hydrogen peroxide water and pure water) ), DHF (Dilute Hydrofluoric Acid) cleaning solution (dilute hydrofluoric acid), pure water (deionized water), ozone water or a mixture containing ozone water, etc.

處理液收集部50是收集使用後的處理液的部位。如圖3所示，處理液收集部50包括內杯體51、中杯體52及外杯體53。內杯體51、中杯體52及外杯體53能夠藉由省略圖示的升降機構而相互獨立地升降移動。The processing liquid collection part 50 is a part which collects the processing liquid after use. As shown in FIG. 3, the processing liquid collection part 50 includes an inner cup 51, a middle cup 52 and an outer cup 53. The inner cup body 51, the middle cup body 52, and the outer cup body 53 can be moved up and down independently of each other by a lifting mechanism (not shown).

內杯體51包括包圍基板保持部20的周圍的圓環狀的第一引導板510。中杯體52包括位於第一引導板510的外側並且上側的圓環狀的第二引導板520。外杯體53包括位於第二引導板520的外側並且上側的圓環狀的第三引導板530。另外，內杯體51的底部是展開至中杯體52及外杯體53的下方為止。而且，於所述底部的上表面，自內側起依次設置有第一排液槽511、第二排液槽512及第三排液槽513。The inner cup 51 includes an annular first guide plate 510 surrounding the periphery of the substrate holding portion 20. The middle cup body 52 includes an annular second guide plate 520 located outside and on the upper side of the first guide plate 510. The outer cup 53 includes an annular third guide plate 530 located outside and on the upper side of the second guide plate 520. In addition, the bottom of the inner cup 51 is expanded to below the middle cup 52 and the outer cup 53. Furthermore, on the upper surface of the bottom, a first drain tank 511, a second drain tank 512, and a third drain tank 513 are sequentially provided from the inside.

自處理液供給部40的各噴嘴管412噴出的處理液被供給至基板W後，因由基板W的旋轉而產生的離心力，而向外側飛散。接著，自基板W飛散的處理液被收集至第一引導板510、第二引導板520及第三引導板530中任一者。使收集至第一引導板510的處理液通過第一排液槽511，向處理單元102的外部排出。使收集至第二引導板520的處理液通過第二排液槽512，向處理單元102的外部排出。使收集至第三引導板530的處理液通過第三排液槽513，向處理單元102的外部排出。After the processing liquid ejected from each nozzle tube 412 of the processing liquid supply unit 40 is supplied to the substrate W, it is scattered outward due to the centrifugal force generated by the rotation of the substrate W. Then, the processing liquid scattered from the substrate W is collected in any one of the first guide plate 510, the second guide plate 520, and the third guide plate 530. The processing liquid collected on the first guide plate 510 passes through the first liquid drain tank 511 and is discharged to the outside of the processing unit 102. The processing liquid collected on the second guide plate 520 passes through the second liquid drain tank 512 and is discharged to the outside of the processing unit 102. The processing liquid collected on the third guide plate 530 passes through the third liquid drain tank 513 and is discharged to the outside of the processing unit 102.

如上所述，所述處理單元102具有多條處理液的排出路徑。因此，能夠針對每個種類分別回收供給至基板的處理液。因而，經回收的處理液的廢棄或再生處理亦可以根據各處理液的性質而分別進行。As described above, the processing unit 102 has multiple discharge paths for the processing liquid. Therefore, the processing liquid supplied to the substrate can be recovered for each type. Therefore, the disposal or regeneration treatment of the recovered treatment liquid can also be performed separately according to the properties of each treatment liquid.

控制部60是用於對處理單元102內的各部進行動作控制的部件。圖5是表示控制部60與處理單元102內的各部的連接的框圖。如圖5中概念性地表示般，控制部60包括具有中央處理單元（central processing unit，CPU）等處理器61、隨機存取記憶體（random access memory，RAM）等記憶體62、及硬式磁碟機等儲存部63的電腦。在儲存部63內，安裝有用於執行處理單元102中的基板W的處理的電腦程式P。The control unit 60 is a component for performing operation control of each unit in the processing unit 102. FIG. 5 is a block diagram showing the connection between the control unit 60 and each unit in the processing unit 102. As shown conceptually in Fig. 5, the control unit 60 includes a processor 61 such as a central processing unit (CPU), a memory 62 such as a random access memory (random access memory, RAM), and a hard magnetic A computer in the storage section 63 such as a disc player. In the storage section 63, a computer program P for executing the processing of the substrate W in the processing unit 102 is installed.

另外，如圖5所示，控制部60與所述風機過濾器單元15、夾持銷切換機構23、自旋馬達32、三個馬達42、處理液供給部40的閥461、閥462、閥463、處理液收集部50的升降機構、及噴射器453分別可通信地連接著。控制部60將儲存部63中所儲存的電腦程式P及資料暫時讀取至記憶體62，並基於所述電腦程式P，處理器61進行運算處理，藉此來對所述各部進行動作控制。藉此，進行處理單元102中的基板W的處理。In addition, as shown in FIG. 5, the control unit 60 and the fan filter unit 15, the clamp pin switching mechanism 23, the spin motor 32, the three motors 42, the valve 461, the valve 462, and the valve of the processing liquid supply unit 40 463, the elevating mechanism of the processing liquid collection part 50, and the ejector 453 are respectively communicably connected. The control unit 60 temporarily reads the computer program P and data stored in the storage unit 63 to the memory 62, and based on the computer program P, the processor 61 performs arithmetic processing to control the actions of the various units. Thereby, the processing of the substrate W in the processing unit 102 is performed.

＜3.各配管的流路＞ 以下，對送液管411、噴嘴管412及抽吸管413各者的流路進行說明。圖6是送液管411、噴嘴管412及抽吸管413的剖面圖。<3. Flow path of each piping> Hereinafter, the flow path of each of the liquid feeding pipe 411, the nozzle pipe 412, and the suction pipe 413 will be described. 6 is a cross-sectional view of the liquid feeding pipe 411, the nozzle pipe 412, and the suction pipe 413.

噴嘴管412於內部具有噴嘴流路412A。噴嘴流路412A沿著鉛垂方向延伸。以下，將沿著鉛垂方向延伸的噴嘴流路412A的上方稱為「上游」，將下方稱為「下游」。噴嘴流路412A的直徑自上游至下游為固定。噴嘴流路412A的直徑例如設為ϕ4[mm]。噴嘴流路412A的下游開口，從而形成朝基板W噴出處理液的噴出口412B。The nozzle pipe 412 has a nozzle flow path 412A inside. The nozzle flow path 412A extends in the vertical direction. Hereinafter, the upper part of the nozzle flow path 412A extending in the vertical direction is referred to as "upstream", and the lower part is referred to as "downstream". The diameter of the nozzle flow path 412A is constant from upstream to downstream. The diameter of the nozzle flow path 412A is set to ϕ4 [mm], for example. The downstream of the nozzle flow path 412A is opened, thereby forming an ejection port 412B that ejects the processing liquid toward the substrate W.

送液管411連接於噴嘴管412的上部。送液管411於內部具有送液流路411A。送液流路411A沿著水平方向延伸。送液流路411A與噴嘴流路412A的上游側相連。本實施方式中，送液流路411A的直徑與噴嘴流路412A的直徑相同。即，送液流路411A的直徑例如設為ϕ4[mm]。The liquid feeding pipe 411 is connected to the upper part of the nozzle pipe 412. The liquid feeding pipe 411 has a liquid feeding channel 411A inside. The liquid feeding channel 411A extends in the horizontal direction. The liquid feeding channel 411A is connected to the upstream side of the nozzle channel 412A. In this embodiment, the diameter of the liquid feeding channel 411A is the same as the diameter of the nozzle channel 412A. That is, the diameter of the liquid feeding channel 411A is set to ϕ4 [mm], for example.

抽吸管413連接於噴嘴管412。抽吸管413與噴嘴管412的連接部位於較噴嘴管412與送液管411的連接部更靠下游處。抽吸管413於內部具有抽吸流路413A。抽吸流路413A沿著水平方向延伸。抽吸流路413A與較送液流路411A更靠下游側的噴嘴流路412A相連。本實施方式中，抽吸流路413A的直徑與噴嘴流路412A及送液流路411A的直徑相同。即，抽吸流路413A的直徑例如設為ϕ4[mm]。The suction pipe 413 is connected to the nozzle pipe 412. The connection part between the suction pipe 413 and the nozzle pipe 412 is located further downstream than the connection part between the nozzle pipe 412 and the liquid feeding pipe 411. The suction pipe 413 has a suction flow path 413A inside. The suction flow path 413A extends in the horizontal direction. The suction flow path 413A is connected to the nozzle flow path 412A on the downstream side of the liquid feed flow path 411A. In this embodiment, the diameter of the suction flow path 413A is the same as the diameters of the nozzle flow path 412A and the liquid sending flow path 411A. That is, the diameter of the suction flow path 413A is set to ϕ4 [mm], for example.

再者，送液管411、噴嘴管412及抽吸管413可為一個零件，亦可為不同的零件。Furthermore, the liquid delivery pipe 411, the nozzle pipe 412, and the suction pipe 413 may be one part or different parts.

如圖4所說明般，藉由控制部60將第一閥461及第二閥462打開，而對送液管411供給處理液。所述處理液自送液流路411A朝噴嘴流路412A被輸送，並自噴出口412B朝基板W噴出。其後，藉由控制部60將第一閥461及第二閥462關閉，而停止朝送液管411供給處理液。而且，停止自噴嘴管412的噴出口412B朝基板W噴出處理液。As illustrated in FIG. 4, the control unit 60 opens the first valve 461 and the second valve 462 to supply the processing liquid to the liquid feeding pipe 411. The processing liquid is transported from the liquid supply flow path 411A to the nozzle flow path 412A, and is ejected toward the substrate W from the ejection port 412B. After that, the control unit 60 closes the first valve 461 and the second valve 462 to stop the supply of the processing liquid to the liquid feeding pipe 411. Then, the ejection of the processing liquid from the ejection port 412B of the nozzle tube 412 toward the substrate W is stopped.

當停止噴出處理液時，控制部60驅動噴射器453，並打開第三閥463。藉此，於抽吸流路413A中產生抽吸力，並藉由該抽吸力，將噴嘴流路412A內的處理液朝抽吸流路413A抽吸。藉由所述抽吸，噴嘴流路412A內的處理液的殘留得以抑制，從而防止自噴嘴流路412A朝基板W的液滴下落。再者，詳細而言，當對處理液進行抽吸時，不產生朝基板W的液滴下落的程度的處理液殘留於噴嘴流路412A內。When the ejection of the treatment liquid is stopped, the control unit 60 drives the ejector 453 and opens the third valve 463. Thereby, a suction force is generated in the suction flow path 413A, and the processing liquid in the nozzle flow path 412A is sucked toward the suction flow path 413A by the suction force. Due to the suction, the residue of the processing liquid in the nozzle flow path 412A is suppressed, thereby preventing droplets from the nozzle flow path 412A from falling toward the substrate W. Furthermore, in detail, when the processing liquid is sucked, the processing liquid that does not cause droplets to fall on the substrate W remains in the nozzle flow path 412A.

所述抽吸於即將停止噴出處理液之前開始。即，於自噴出口412B噴出著處理液的狀態下，開始處理液的抽吸。具體而言，控制部60於關閉第一閥461及第二閥462之前，進行噴射器453的驅動與第三閥463的開放。藉此，噴嘴流路412A內的處理液逐漸減少，在停止噴出的時機，殘留於噴嘴流路412A的處理液變少。因此，於剛剛停止噴出後，能夠自噴嘴流路412A朝抽吸流路413A以短時間抽吸處理液，從而能夠抑制因自重而致的液滴下落。The suction is started immediately before stopping the spraying of the treatment liquid. That is, in a state where the processing liquid is ejected from the ejection port 412B, the suction of the processing liquid is started. Specifically, the control unit 60 drives the ejector 453 and opens the third valve 463 before closing the first valve 461 and the second valve 462. Thereby, the processing liquid in the nozzle flow path 412A gradually decreases, and when the ejection is stopped, the processing liquid remaining in the nozzle flow path 412A decreases. Therefore, immediately after the ejection is stopped, the processing liquid can be sucked from the nozzle flow path 412A toward the suction flow path 413A in a short time, and the droplet falling due to its own weight can be suppressed.

此處，於送液流路411A的直徑大於噴嘴流路412A的直徑的情況下，噴嘴流路412A內的處理液的流速變快。如此，藉由朝抽吸流路413A的處理液的抽吸力，來自噴出口412B的處理液的噴出的壓力占主導。因此，即便於自噴出口412B噴出處理液的狀態下開始處理液的抽吸，所抽吸的處理液的量亦少。Here, when the diameter of the liquid feeding channel 411A is larger than the diameter of the nozzle channel 412A, the flow velocity of the processing liquid in the nozzle channel 412A becomes faster. In this way, the pressure of the processing liquid discharged from the discharge port 412B is dominant due to the suction force of the processing liquid to the suction flow path 413A. Therefore, even if the suction of the processing liquid is started in a state where the processing liquid is discharged from the discharge port 412B, the amount of the suctioned processing liquid is small.

與此相對，本實施方式中，送液流路411A與噴嘴流路412A具有相同的直徑。因此，能夠抑制噴嘴流路412A內的處理液的流速。因而，即便於自噴出口412B噴出處理液的狀態下，亦能夠容易朝抽吸流路413A抽吸處理液。藉此，能夠進一步抑制剛剛停止噴出後的液滴下落。In contrast, in the present embodiment, the liquid feeding channel 411A and the nozzle channel 412A have the same diameter. Therefore, the flow velocity of the processing liquid in the nozzle flow path 412A can be suppressed. Therefore, even in a state where the processing liquid is ejected from the ejection port 412B, the processing liquid can be easily sucked into the suction flow path 413A. Thereby, it is possible to further suppress the drop of the droplet immediately after the discharge is stopped.

另外，本實施方式中，抽吸流路413A與噴嘴流路412A具有相同的直徑。因此，接近於抽吸流路413A中產生的抽吸力的大小的抽吸力作用至噴嘴流路412A內。此處，對於直徑小的流路與直徑大的流路，於以相同的抽吸力對流路內的處理液進行抽吸的情況下，直徑大的流路能夠抽吸的處理液的量變少。因而，假設，當噴嘴流路412A的直徑大於抽吸流路413A的直徑時，存在於抽吸流路413A中產生的抽吸力未充分作用至噴嘴流路412A，而無法朝抽吸流路413A抽吸噴嘴流路412A內的處理液的情況。於該情況下，於噴嘴流路412A內殘留處理液，而有可能產生液滴下落。此處，本實施方式中，藉由將抽吸流路413A的直徑與噴嘴流路412A的直徑設為相同，能夠將殘留於噴嘴流路412A內的處理液充分地抽吸至抽吸流路413A。In addition, in this embodiment, the suction flow path 413A and the nozzle flow path 412A have the same diameter. Therefore, a suction force close to the magnitude of the suction force generated in the suction flow path 413A acts in the nozzle flow path 412A. Here, for a flow path with a small diameter and a flow path with a large diameter, when the processing liquid in the flow path is sucked with the same suction force, the amount of processing liquid that can be sucked by the flow path with a large diameter is reduced . Therefore, it is assumed that when the diameter of the nozzle flow path 412A is larger than the diameter of the suction flow path 413A, the suction force generated in the suction flow path 413A is not sufficiently applied to the nozzle flow path 412A and cannot be directed to the suction flow path. 413A sucks the processing liquid in the nozzle flow path 412A. In this case, the processing liquid remains in the nozzle flow path 412A, and droplets may fall. Here, in this embodiment, by making the diameter of the suction flow path 413A the same as the diameter of the nozzle flow path 412A, it is possible to sufficiently suck the processing liquid remaining in the nozzle flow path 412A to the suction flow path. 413A.

尤其，本實施方式中，處理液為比重較（例如較純水）高，且，表面張力較（例如較純水）低的SPM清洗液。高比重且低表面張力的藥液極容易產生因自重而致的下滴。因此，設為自停止噴出處理液之前開始處理液的抽吸，從而抽吸力充分作用至噴嘴流路412A內的構成。藉此，抑制噴嘴流路412A內的處理液的殘留，從而能夠進一步防止處理液因自重而致的下滴。In particular, in this embodiment, the treatment liquid is an SPM cleaning liquid having a relatively high specific gravity (for example, relatively pure water) and a lower surface tension (for example, relatively pure water). High specific gravity and low surface tension liquid medicine is very easy to drip due to its own weight. Therefore, it is assumed that the suction of the processing liquid is started before the discharge of the processing liquid is stopped, and the suction force is sufficiently applied to the nozzle flow path 412A. This suppresses the remaining of the processing liquid in the nozzle flow path 412A, and can further prevent dripping of the processing liquid due to its own weight.

＜4.基板W的處理＞ 以下，對如所述般構成的基板處理裝置100中的基板W的處理的一例進行說明。<4. Treatment of substrate W> Hereinafter, an example of the processing of the substrate W in the substrate processing apparatus 100 configured as described above will be described.

當藉由主搬運機器人103將基板W搬入至腔室10內時，基板保持部20藉由多個夾持銷22而水平地保持所搬入的基板W。其後，控制部60使旋轉機構30的自旋馬達32驅動，而使基板W開始旋轉。繼而，控制部60驅動馬達42，而使噴嘴管412朝與基板W的上表面相向的處理位置移動。接著，控制部60將圖4的第一閥461及第二閥462打開，從而自噴嘴管412朝向基板W的上表面噴出硫酸與過氧化氫水的混合液即SPM清洗液。SPM清洗液的溫度例如設為150℃～200℃。When the substrate W is loaded into the chamber 10 by the main transfer robot 103, the substrate holding portion 20 horizontally holds the loaded substrate W by the plurality of clamping pins 22. After that, the control unit 60 drives the spin motor 32 of the rotation mechanism 30 to start the rotation of the substrate W. Then, the control unit 60 drives the motor 42 to move the nozzle tube 412 to the processing position facing the upper surface of the substrate W. Next, the control unit 60 opens the first valve 461 and the second valve 462 of FIG. 4 to spray the SPM cleaning liquid, which is a mixture of sulfuric acid and hydrogen peroxide water, from the nozzle pipe 412 toward the upper surface of the substrate W. The temperature of the SPM cleaning solution is set to 150°C to 200°C, for example.

於噴出規定時間的SPM清洗液後，控制部60驅動噴射器453，並且打開第三閥463，從而使自噴嘴流路412A朝抽吸流路413A的抽吸力產生。藉此，於自噴嘴流路412A朝基板W噴出SPM清洗液的狀態下，開始自噴嘴流路412A朝抽吸流路413A抽吸SPM清洗液。其後，控制部60將第一閥461及第二閥462關閉，而停止供給SPM清洗液。After the SPM cleaning fluid is ejected for a predetermined time, the control unit 60 drives the ejector 453 and opens the third valve 463 to generate a suction force from the nozzle flow path 412A to the suction flow path 413A. Thereby, in a state where the SPM cleaning liquid is ejected from the nozzle flow path 412A toward the substrate W, the suction of the SPM cleaning liquid from the nozzle flow path 412A to the suction flow path 413A is started. After that, the control unit 60 closes the first valve 461 and the second valve 462, and stops the supply of the SPM cleaning liquid.

於朝基板W的各種處理液的供給完成後，基板處理裝置100使基板W的表面乾燥。當基板W的乾燥處理結束時，解除多個夾持銷22對基板W的保持，主搬運機器人103將處理後的基板W自基板保持部20取出，並搬出至腔室10的外部。After the supply of various processing liquids to the substrate W is completed, the substrate processing apparatus 100 dries the surface of the substrate W. When the drying process of the substrate W is completed, the holding of the substrate W by the plurality of clamping pins 22 is released, and the main transport robot 103 takes the processed substrate W out of the substrate holding portion 20 and carries it out of the chamber 10.

如上所述，藉由將送液流路411A、噴嘴流路412A及抽吸流路413A各自的直徑設為相同，能夠防止來自噴嘴流路412A的處理液的液滴下落。其結果，能夠精度良好地處理基板W的表面。尤其，本例中示出的處理液是SPM清洗液。所述SPM清洗液比重較高且表面張力較低。此種高比重且低表面張力的藥液極容易產生因自重而致的下滴。尤其，於如SPM清洗液般的發泡性的處理液中，存在發泡狀態激烈，於因由發泡產生的氣體而被截斷且中斷的狀態下，無法充分抽吸噴嘴流路412A內的處理液的情況。但是，於所述基板處理裝置100中，噴嘴流路412A內的處理液即便是如SPM清洗液般的因氣體而被截斷的發泡狀態的處理液，亦能夠對噴嘴流路412A內的SPM清洗液進行抽吸。而且，能夠防止因自重而致的下滴。As described above, by setting the respective diameters of the liquid feeding channel 411A, the nozzle channel 412A, and the suction channel 413A to be the same, it is possible to prevent the droplets of the processing liquid from the nozzle channel 412A from falling. As a result, the surface of the substrate W can be processed accurately. In particular, the processing liquid shown in this example is an SPM cleaning liquid. The SPM cleaning solution has a higher specific gravity and a lower surface tension. Such a high specific gravity and low surface tension liquid medicine is extremely prone to dripping due to its own weight. In particular, in a foaming treatment liquid like SPM cleaning solution, the foaming state is intense, and the treatment in the nozzle flow path 412A cannot be sufficiently sucked in the state where the gas generated by the foaming is interrupted and interrupted. Liquid situation. However, in the substrate processing apparatus 100, even if the processing liquid in the nozzle flow path 412A is in a foamed state that is blocked by gas like an SPM cleaning liquid, it can react to the SPM in the nozzle flow path 412A. The cleaning fluid is sucked. Moreover, it is possible to prevent dripping due to its own weight.

＜5.變形例＞ 以上，已對本發明的實施方式進行說明，但是本發明並不限定於所述實施方式。＜5. Modifications＞ The embodiments of the present invention have been described above, but the present invention is not limited to the embodiments.

於所述實施方式中，將送液流路411A、噴嘴流路412A及抽吸流路413A各自的直徑設為相同，但並不限定於此。In the above-described embodiment, the diameters of the liquid feeding flow path 411A, the nozzle flow path 412A, and the suction flow path 413A are the same, but the diameter is not limited to this.

圖7是變形例的送液流路411A、噴嘴流路412A及抽吸流路413A的剖面圖。於圖7中，送液流路411A與抽吸流路413A具有不同的直徑。Fig. 7 is a cross-sectional view of a liquid feeding channel 411A, a nozzle channel 412A, and a suction channel 413A according to a modification. In FIG. 7, the liquid delivery channel 411A and the suction channel 413A have different diameters.

送液流路411A具有ϕ6[mm]的直徑。另外，噴嘴流路412A於上游側具有ϕ6[mm]的直徑，於下游側具有ϕ4[mm]的直徑。詳細而言，自與抽吸流路413A的連接位置起下游側的噴嘴流路412A的直徑為ϕ4[mm]。另外，自與抽吸流路413A的連接位置起上游側的噴嘴流路412A的直徑為ϕ6[mm]。即便是此種構成，接近於抽吸流路413A中產生的抽吸力的抽吸力亦作用至自與抽吸流路413A的連接位置起下游側處，從而能夠良好地抽吸SPM清洗液。The liquid feeding channel 411A has a diameter of ϕ6 [mm]. In addition, the nozzle flow path 412A has a diameter of ϕ6 [mm] on the upstream side and a diameter of ϕ4 [mm] on the downstream side. Specifically, the diameter of the nozzle flow path 412A on the downstream side from the connection position with the suction flow path 413A is ϕ4 [mm]. In addition, the diameter of the nozzle flow path 412A on the upstream side from the connection position with the suction flow path 413A is ϕ6 [mm]. Even with this configuration, the suction force close to the suction force generated in the suction flow path 413A also acts on the downstream side from the connection position with the suction flow path 413A, so that the SPM cleaning solution can be sucked well .

再者，只要自與抽吸流路413A的連接位置起下游側的噴嘴流路412A的直徑為抽吸流路413A的直徑以下即可。另外，只要送液流路411A的直徑為自與抽吸流路413A的連接位置起上游側的噴嘴流路412A的直徑以下即可。In addition, the diameter of the nozzle flow path 412A on the downstream side from the connection position with the suction flow path 413A may be equal to or less than the diameter of the suction flow path 413A. In addition, the diameter of the liquid feeding channel 411A may be equal to or less than the diameter of the nozzle channel 412A on the upstream side from the connection position with the suction channel 413A.

另外，送液流路411A可兼用作對殘留於噴嘴流路412A內的處理液進行抽吸的抽吸流路。圖8是表示自送液流路411A抽吸噴嘴流路412A的處理液時的送液管411及抽吸管413的連接狀態的一例的圖。In addition, the liquid feeding channel 411A can also be used as a suction channel for sucking the processing liquid remaining in the nozzle channel 412A. FIG. 8 is a diagram showing an example of the connection state of the liquid feeding tube 411 and the suction tube 413 when the processing liquid in the nozzle channel 412A is sucked from the liquid feeding channel 411A.

送液管411亦連接於噴射器455。於自送液管411朝噴射器455的路徑中途設置有第四閥464。第四閥464與第三閥463同樣地配置於流體箱104附近。當打開第四閥464並驅動噴射器455時，於送液管411內產生抽吸力。藉由所述抽吸力，殘留於噴嘴管412的噴嘴流路412A的上游側的處理液被朝送液管411的送液流路411A抽吸。藉此，能夠抑制殘留於噴嘴流路412A的上游側的處理液朝基板W下滴的可能。The liquid feeding pipe 411 is also connected to the ejector 455. A fourth valve 464 is provided in the middle of the path from the liquid feeding pipe 411 to the ejector 455. The fourth valve 464 is arranged in the vicinity of the fluid tank 104 like the third valve 463. When the fourth valve 464 is opened and the ejector 455 is driven, a suction force is generated in the liquid feeding pipe 411. Due to the suction force, the processing liquid remaining on the upstream side of the nozzle flow path 412A of the nozzle tube 412 is sucked into the liquid feeding flow path 411A of the liquid feeding tube 411. Thereby, it is possible to suppress the possibility that the processing liquid remaining on the upstream side of the nozzle flow path 412A drips onto the substrate W.

於連接於噴射器455的路徑中途連接有收集罐456。自噴嘴管412抽吸至送液管411的處理液被回收至該收集罐456。即，自送液管411抽吸的處理液與自抽吸管413抽吸的處理液分別被回收至不同的收集罐。再者，收集罐454、收集罐456既可配置於流體箱104的內部，亦可配置於外部。A collecting tank 456 is connected to the middle of the path connected to the ejector 455. The processing liquid sucked from the nozzle pipe 412 to the liquid feeding pipe 411 is recovered to the collection tank 456. That is, the processing liquid sucked from the liquid feeding pipe 411 and the processing liquid sucked from the suction pipe 413 are respectively collected in different collection tanks. Furthermore, the collection tank 454 and the collection tank 456 may be arranged inside the fluid tank 104 or outside.

另外，處理液可為SPM液以外的處理液。In addition, the treatment liquid may be a treatment liquid other than the SPM liquid.

關於以上所說明的基板處理裝置100的細節部分的構成，可以與本申請案的各圖不同。另外，亦可以將所述實施方式及變形例中所出現的各元件，於不產生矛盾的範圍內適當加以組合。Regarding the detailed configuration of the substrate processing apparatus 100 described above, it may be different from the drawings in this application. In addition, the respective elements appearing in the above-mentioned embodiments and modifications may be appropriately combined within a range that does not cause any contradiction.

10‧‧‧腔室 11‧‧‧處理空間 12‧‧‧側壁 13‧‧‧頂板部 14‧‧‧底板部 15‧‧‧風機過濾器單元 16‧‧‧排氣導管 20‧‧‧基板保持部 21‧‧‧自旋底座 22‧‧‧夾持銷 23‧‧‧夾持銷切換機構 30‧‧‧旋轉機構 31‧‧‧馬達蓋 32‧‧‧自旋馬達 33‧‧‧支撐軸 40‧‧‧處理液供給部 42‧‧‧馬達 50‧‧‧處理液收集部 51‧‧‧內杯體 52‧‧‧中杯體 53‧‧‧外杯體 60‧‧‧控制部 61‧‧‧處理器 62‧‧‧記憶體 63‧‧‧儲存部 100‧‧‧基板處理裝置 101‧‧‧分度器 102‧‧‧處理單元 103‧‧‧主搬運機器人 104‧‧‧流體箱 330‧‧‧軸芯 411‧‧‧送液管 411A‧‧‧送液流路 412‧‧‧噴嘴管 412A‧‧‧噴嘴流路 412B‧‧‧噴出口 413‧‧‧抽吸管 413A‧‧‧抽吸流路 451‧‧‧硫酸供給源 452‧‧‧過氧化氫水供給源 453、455‧‧‧噴射器 454、456‧‧‧收集罐 461‧‧‧第一閥 462‧‧‧第二閥 463‧‧‧第三閥 464‧‧‧第四閥 510‧‧‧第一引導板 511‧‧‧第一排液槽 512‧‧‧第二排液槽 513‧‧‧第三排液槽 520‧‧‧第二引導板 530‧‧‧第三引導板 P‧‧‧電腦程式 W‧‧‧基板 ϕ4、ϕ6‧‧‧直徑10‧‧‧Chamber 11‧‧‧Processing space 12‧‧‧Sidewall 13‧‧‧Top Board 14‧‧‧Bottom plate 15‧‧‧Fan Filter Unit 16‧‧‧Exhaust duct 20‧‧‧Substrate holding part 21‧‧‧Spin base 22‧‧‧Clamping pin 23‧‧‧Clamping pin switching mechanism 30‧‧‧Rotating mechanism 31‧‧‧Motor cover 32‧‧‧Spin Motor 33‧‧‧Support shaft 40‧‧‧Processing liquid supply part 42‧‧‧Motor 50‧‧‧Processing liquid collection part 51‧‧‧Inner cup body 52‧‧‧Medium cup body 53‧‧‧Outer cup body 60‧‧‧Control Department 61‧‧‧Processor 62‧‧‧Memory 63‧‧‧Storage Department 100‧‧‧Substrate processing equipment 101‧‧‧Indexer 102‧‧‧Processing unit 103‧‧‧Main handling robot 104‧‧‧Fluid tank 330‧‧‧Axle 411‧‧‧Liquid delivery tube 411A‧‧‧Liquid delivery path 412‧‧‧Nozzle tube 412A‧‧‧Nozzle flow path 412B‧‧‧ nozzle 413‧‧‧Suction tube 413A‧‧‧Suction flow path 451‧‧‧Sulfuric acid supply source 452‧‧‧Hydrogen peroxide water supply source 453、455‧‧‧Ejector 454、456‧‧‧Collection tank 461‧‧‧First valve 462‧‧‧Second valve 463‧‧‧Third valve 464‧‧‧Fourth valve 510‧‧‧First guide plate 511‧‧‧First drain tank 512‧‧‧Second drain tank 513‧‧‧Third drain tank 520‧‧‧Second guide plate 530‧‧‧Third guide plate P‧‧‧computer program W‧‧‧Substrate ϕ4, ϕ6‧‧‧diameter

圖1是基板處理裝置的平面圖。 圖2是處理單元的平面圖。 圖3是處理單元的縱剖面圖。 圖4是表示送液管及抽吸管的連接狀態的一例的圖。 圖5是表示控制部與處理單元內的各部的連接的框圖。 圖6是送液管、噴嘴管及抽吸管的剖面圖。 圖7是變形例的送液流路、噴嘴流路及抽吸流路的剖面圖。 圖8是表示自送液流路抽吸噴嘴流路的處理液時的送液管及抽吸管的連接狀態的一例的圖。Fig. 1 is a plan view of a substrate processing apparatus. Figure 2 is a plan view of a processing unit. Fig. 3 is a longitudinal sectional view of the processing unit. Fig. 4 is a diagram showing an example of a connection state of a liquid supply tube and a suction tube. Fig. 5 is a block diagram showing the connection between the control unit and each unit in the processing unit. Fig. 6 is a cross-sectional view of a liquid feeding pipe, a nozzle pipe, and a suction pipe. Fig. 7 is a cross-sectional view of a liquid supply flow path, a nozzle flow path, and a suction flow path of a modification. 8 is a diagram showing an example of the connection state of the liquid feeding tube and the suction tube when the processing liquid in the nozzle flow channel is sucked from the liquid feeding channel.

411‧‧‧送液管 411‧‧‧Liquid delivery tube

411A‧‧‧送液流路 411A‧‧‧Liquid delivery path

412‧‧‧噴嘴管 412‧‧‧Nozzle tube

412A‧‧‧噴嘴流路 412A‧‧‧Nozzle flow path

412B‧‧‧噴出口 412B‧‧‧ nozzle

413‧‧‧抽吸管 413‧‧‧Suction tube

413A‧‧‧抽吸流路 413A‧‧‧Suction flow path

Φ4‧‧‧直徑 Φ4‧‧‧diameter

Claims (10)

一種基板處理裝置，其對基板供給處理液，且所述基板處理裝置包括：噴嘴管，朝所述基板噴出處理液，且具有噴出口；送液管，連接於所述噴嘴管，並朝所述噴嘴管輸送處理液；抽吸管，於較所述送液管更靠下游側處且在到所述噴出口之前連接於所述噴嘴管，並對所述噴嘴管內的處理液進行抽吸；以及處理部，對所述基板進行保持，藉由自所述噴嘴管噴出的處理液來進行所述基板的處理，且至少自所述抽吸管的連接位置起到下游側的所述噴出口的所述噴嘴管的內徑為所述抽吸管的內徑以下。 A substrate processing device that supplies processing liquid to a substrate, and the substrate processing device includes: a nozzle tube, which sprays the processing liquid toward the substrate, and has a spray outlet; a liquid feeding tube, which is connected to the nozzle tube and faces the substrate The nozzle pipe transports the processing liquid; the suction pipe is connected to the nozzle pipe at a more downstream side than the liquid delivery pipe and is connected to the nozzle pipe before reaching the ejection port, and pumps the processing liquid in the nozzle pipe And a processing unit that holds the substrate, performs processing of the substrate by the processing liquid ejected from the nozzle tube, and at least from the connection position of the suction pipe to the downstream side The inner diameter of the nozzle tube of the ejection port is equal to or less than the inner diameter of the suction tube. 如申請專利範圍第1項所述的基板處理裝置，其中，所述送液管的內徑為自所述抽吸管的連接位置起上游側的所述噴嘴管的內徑以下。 The substrate processing apparatus according to claim 1, wherein the inner diameter of the liquid feeding pipe is equal to or less than the inner diameter of the nozzle pipe on the upstream side from the connection position of the suction pipe. 如申請專利範圍第1項或第2項所述的基板處理裝置，其中自所述抽吸管的連接位置起下游側的所述噴嘴管的內徑小於自所述連接位置起上游側的內徑。 The substrate processing apparatus according to claim 1 or 2, wherein the inner diameter of the nozzle pipe on the downstream side from the connection position of the suction pipe is smaller than the inner diameter of the nozzle pipe on the upstream side from the connection position path. 如申請專利範圍第1項或第2項所述的基板處理裝置，其中所述噴嘴管的內徑、所述送液管的內徑、及所述抽吸管的內 徑為相同。 The substrate processing apparatus described in item 1 or item 2 of the scope of patent application, wherein the inner diameter of the nozzle tube, the inner diameter of the liquid feeding tube, and the inner diameter of the suction tube The diameter is the same. 如申請專利範圍第1項或第2項所述的基板處理裝置，其包括：噴射器，對所述抽吸管內進行抽吸；開閉閥，對連接所述抽吸管與所述噴射器的路徑進行開閉；以及流體箱，與所述處理部鄰接地配置，收容處理液相關設備；且所述開閉閥配置於所述流體箱附近。 The substrate processing apparatus described in item 1 or item 2 of the scope of the patent application includes: an ejector, which sucks the inside of the suction pipe; an opening and closing valve, which connects the suction pipe and the ejector. And a fluid tank, which is arranged adjacent to the processing part and contains equipment related to the processing liquid; and the on-off valve is arranged near the fluid tank. 如申請專利範圍第1項或第2項所述的基板處理裝置，其中所述處理液為發泡狀態的液體。 The substrate processing apparatus described in item 1 or item 2 of the scope of patent application, wherein the processing liquid is a liquid in a foamed state. 如申請專利範圍第1項或第2項所述的基板處理裝置，其中所述送液管兼用作對所述噴嘴管內的處理液進行抽吸的管。 The substrate processing apparatus described in the first or second patent application, wherein the liquid feeding pipe also serves as a pipe for sucking the processing liquid in the nozzle pipe. 如申請專利範圍第7項所述的基板處理裝置，其中，自所述送液管抽吸的處理液與自所述抽吸管抽吸的處理液分別被回收至不同的收集罐。 The substrate processing apparatus described in claim 7, wherein the processing liquid sucked from the liquid feeding pipe and the processing liquid sucked from the suction pipe are respectively collected into different collection tanks. 如申請專利範圍第1項或第2項所述的基板處理裝置，其中所述噴嘴管沿著鉛垂方向延伸。 In the substrate processing apparatus described in item 1 or item 2, the nozzle tube extends in a vertical direction. 如申請專利範圍第1項或第2項所述的基板處理裝 置，其中於停止自所述送液管輸送處理液前，開始自所述抽吸管抽吸所述噴嘴管內的處理液。 The substrate processing device as described in item 1 or item 2 of the scope of patent application Wherein the processing liquid in the nozzle tube is started to be sucked from the suction pipe before stopping the processing liquid from the liquid feeding pipe.
TW108100577A 2018-02-14 2019-01-07 Substrate processing device TWI717675B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018023995A JP7055658B2 (en) 2018-02-14 2018-02-14 Board processing equipment
JP2018-023995 2018-02-14

Publications (2)

Publication Number Publication Date
TW201935546A TW201935546A (en) 2019-09-01
TWI717675B true TWI717675B (en) 2021-02-01

Family

ID=67619893

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108100577A TWI717675B (en) 2018-02-14 2019-01-07 Substrate processing device

Country Status (5)

Country Link
JP (1) JP7055658B2 (en)
KR (1) KR102418934B1 (en)
CN (1) CN111656493A (en)
TW (1) TWI717675B (en)
WO (1) WO2019159468A1 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009099599A (en) * 2007-10-12 2009-05-07 Ses Co Ltd Substrate processing apparatus
JP2013172079A (en) * 2012-02-22 2013-09-02 Dainippon Screen Mfg Co Ltd Substrate processing device and processing liquid suction method
JP2016063035A (en) * 2014-09-17 2016-04-25 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing apparatus
TW201703111A (en) * 2015-02-27 2017-01-16 思可林集團股份有限公司 Substrate treating apparatus and method of controlling substrate treating apparatus
TW201729256A (en) * 2015-11-17 2017-08-16 尤金科技有限公司 Substrate processing apparatus and substrate processing method using the same
JP2017183568A (en) * 2016-03-31 2017-10-05 株式会社Ｓｃｒｅｅｎホールディングス Wafer processing apparatus and wafer processing method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009099599A (en) * 2007-10-12 2009-05-07 Ses Co Ltd Substrate processing apparatus
JP2013172079A (en) * 2012-02-22 2013-09-02 Dainippon Screen Mfg Co Ltd Substrate processing device and processing liquid suction method
JP2016063035A (en) * 2014-09-17 2016-04-25 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing apparatus
TW201703111A (en) * 2015-02-27 2017-01-16 思可林集團股份有限公司 Substrate treating apparatus and method of controlling substrate treating apparatus
TW201729256A (en) * 2015-11-17 2017-08-16 尤金科技有限公司 Substrate processing apparatus and substrate processing method using the same
JP2017183568A (en) * 2016-03-31 2017-10-05 株式会社Ｓｃｒｅｅｎホールディングス Wafer processing apparatus and wafer processing method

Also Published As

Publication number Publication date
JP7055658B2 (en) 2022-04-18
CN111656493A (en) 2020-09-11
WO2019159468A1 (en) 2019-08-22
KR102418934B1 (en) 2022-07-07
JP2019140307A (en) 2019-08-22
TW201935546A (en) 2019-09-01
KR20200096644A (en) 2020-08-12

Similar Documents

Publication Publication Date Title
TWI455230B (en) Liquid treatment device, liquid treatment method and memory medium
US11031261B2 (en) Liquid processing apparatus
CN107026071B (en) Substrate processing method and substrate processing apparatus
JP6543534B2 (en) Substrate processing equipment
KR20100100640A (en) Liquid processing apparatus, liquid processing method, and resist coating method
TWI759526B (en) Substrate processing apparatus, substrate processing method, and storage medium
US10290518B2 (en) Substrate liquid processing apparatus
WO2018037982A1 (en) Substrate processing device and substrate processing method
KR102525270B1 (en) Substrate processing apparatus and substrate processing method
TWI775948B (en) Substrate processing device
WO2018030516A1 (en) Substrate processing device, substrate processing method, and storage medium
JP2014197592A (en) Substrate processor
JP3958594B2 (en) Substrate processing apparatus and substrate processing method
TWI665723B (en) Substrate treatment device and substrate treatment method
TWI717675B (en) Substrate processing device
TWI718458B (en) Treatment liquid discharge pipe and substrate treatment device
JP6895341B2 (en) Board processing equipment
JP5726637B2 (en) Liquid processing apparatus and liquid processing method
JP5726636B2 (en) Liquid processing apparatus and liquid processing method
JP6123880B2 (en) Liquid processing equipment
TW202405926A (en) Substrate treatment apparatus