CN111060570B - Sensor device and soil environment monitoring method - Google Patents

Abstract

The present invention provides a sensor device and a soil environment monitoring method, wherein the sensor device is a sensor device which is buried in soil of a cultivated land and measures environmental characteristics of the soil, and the sensor device comprises: an electrode unit having electrodes which are formed at a plurality of discrete positions along the longitudinal direction of a flexible, long sheet substrate and which are capable of coming into contact with soil; a detection circuit part arranged on each electrode part for detecting the electrical change between a pair of electrodes of the electrode part; a conductive power line portion formed continuously in the longitudinal direction on the sheet substrate for supplying a power voltage to each of the detection circuit portions; a conductive signal transmission line portion formed continuously in the longitudinal direction on the sheet substrate for transmitting the detection signal detected by each detection circuit portion; the housing groove is provided with a closed space formed by a film of water at each of discrete positions along the longitudinal direction of the sheet substrate, and the seeds planted in the cultivated land are held in each of the closed spaces.

Description

Sensor device and soil environment monitoring method

The present application is a divisional application of a patent application entitled "plating method, plating apparatus, and sensor apparatus" having an application date of 2017, 3/28/201780021517.0.

Technical Field

The present invention relates to a plating method for plating a substrate by an electrolytic plating method, a plating apparatus for performing the plating method, and a sensor apparatus formed by the electrolytic plating method.

Background

Japanese patent No. 3193721 discloses a manufacturing method for manufacturing a sensor electrode for detecting a specific component such as glucose by selectively performing electroplating by covering a portion other than a portion to be electroplated (for example, a portion to be an electrode) with a resist layer when performing plating treatment of electroplating on a conductive material uniformly formed on a substrate.

However, when electroplating (electrolytic plating) is performed on a part of a pattern formed of a conductive material, it is necessary to precisely pattern a resist layer by accurately overlapping a part of the conductive pattern. In particular, as a part of the conductive pattern to be superimposed becomes fine, the precision of patterning becomes severe, and the patterning work becomes difficult. Therefore, selective plating cannot be easily performed on a portion to be plated. When the substrate to be subjected to the plating treatment is a flexible thin plate such as a resin film or plastic, expansion and contraction or deformation due to the influence of temperature, humidity, tension, or the like of the substrate itself may increase to about several hundred ppm, and positioning or registration for patterning may become difficult.

Disclosure of Invention

A 1 st aspect of the present invention is a plating method for selectively plating a part of a conductive pattern formed on a surface of a long sheet substrate by a conductor while conveying the sheet substrate in a longitudinal direction, the plating method including: forming an auxiliary pattern on the sheet substrate by using a conductive material, the auxiliary pattern being connected to a specific pattern portion of the conductive pattern to be subjected to electrolytic plating and extending in the longitudinal direction; conveying the sheet substrate so that a surface of the sheet substrate is in contact with an electrolytic plating solution at a predetermined distance along the longitudinal direction; while at least the specific pattern portion on the sheet substrate is in contact with the electrolytic plating solution, an electrode member provided at a position separated from the electrolytic plating solution on the surface of the sheet substrate is brought into contact with the auxiliary pattern, and a voltage is applied to the electrolytic plating solution via the electrode member.

A 2 nd aspect of the present invention is a plating method for selectively plating a part of a conductive pattern formed on a surface of a long sheet substrate by a conductor while conveying the sheet substrate in a longitudinal direction, the plating method including: forming a 1 st auxiliary pattern and a 2 nd auxiliary pattern on the sheet substrate using a conductive material, the 1 st auxiliary pattern being connected to a 1 st specific pattern portion of the conductive patterns and extending in the longitudinal direction to a 1 st specific position in the width direction of the sheet substrate intersecting the longitudinal direction, the 2 nd auxiliary pattern being connected to a 2 nd specific pattern portion of the conductive patterns different from the 1 st specific pattern portion and extending in the longitudinal direction to a 2 nd specific position in the width direction of the sheet substrate intersecting the longitudinal direction different from the 1 st specific position; bringing the surface of the sheet substrate into contact with a 1 st electrolytic plating solution over a predetermined distance along the longitudinal direction; bringing a 1 st electrode member, which is provided at a position before or after the surface of the sheet substrate is brought into contact with the 1 st electrolytic plating solution, into contact with the 1 st auxiliary pattern, and applying a voltage to the 1 st electrolytic plating solution via the 1 st electrode member; bringing the surface of the sheet substrate electrolytically plated with the 1 st electrolytic plating solution into contact with a 2 nd electrolytic plating solution over a predetermined distance in the longitudinal direction; and bringing a 2 nd electrode member, which is provided at a position after the surface of the sheet substrate is brought into contact with the 1 st electrolytic plating solution and before or after the 2 nd electrolytic plating solution, into contact with the 2 nd auxiliary pattern, and applying a voltage to the 2 nd electrolytic plating solution via the 2 nd electrode member.

A 3 rd aspect of the present invention is a plating method for selectively plating a part of a conductive pattern formed on a surface of a long sheet substrate by a conductor while conveying the sheet substrate in a longitudinal direction, the plating method including: forming, on the sheet substrate, an auxiliary pattern extending in the longitudinal direction and connected to each of a 1 st specific pattern portion and a 2 nd specific pattern portion different from the 1 st specific pattern portion of the conductive pattern, using a conductive material; bringing the surface of the sheet substrate into contact with a 1 st electrolytic plating solution over a predetermined distance along the longitudinal direction; bringing a 1 st electrode member, which is provided at a position before or after the surface of the sheet substrate is brought into contact with the 1 st electrolytic plating solution, into contact with the auxiliary pattern, and applying a voltage to the 1 st electrolytic plating solution via the 1 st electrode member; cutting off the electrical connection between the 1 st specific pattern portion and the auxiliary pattern after the electrolytic plating by the 1 st electrolytic plating solution; bringing the surface of the sheet substrate electrolytically plated with the 1 st electrolytic plating solution into contact with a 2 nd electrolytic plating solution over a predetermined distance in the longitudinal direction; and bringing a 2 nd electrode member, which is provided at a position after the surface of the sheet substrate is brought into contact with the 1 st electrolytic plating solution and before or after the 2 nd electrolytic plating solution, into contact with the auxiliary pattern, and applying a voltage to the 2 nd electrolytic plating solution via the 2 nd electrode member.

A 4 th aspect of the present invention is a plating apparatus for selectively plating a part of a conductive pattern formed on a surface of a long sheet substrate and made of a conductive material while conveying the sheet substrate in a longitudinal direction, the plating apparatus including: a liquid-receiving section for bringing the surface of the sheet substrate into contact with an electrolytic plating solution over a predetermined distance along the longitudinal direction; an electrode member that is provided on an upstream side or a downstream side of the liquid-receiving section with respect to a transport direction of the sheet substrate, and that is in contact with a conductive auxiliary pattern that is formed on the sheet substrate so as to be connected to a specific pattern portion of the conductive pattern that is subjected to electrolytic plating and to extend in the longitudinal direction to a specific position in a width direction of the sheet substrate that intersects the longitudinal direction; and a power supply unit for applying a voltage for electrolytic plating to the electrolytic plating solution through the electrode member.

A 5 th aspect of the present invention is a plating apparatus for selectively plating a part of a conductive pattern formed of a conductor on a surface of a long sheet substrate while conveying the sheet substrate in a longitudinal direction, the plating apparatus including a conductive 1 st auxiliary pattern and a conductive 2 nd auxiliary pattern formed on the sheet substrate, the conductive 1 st auxiliary pattern being arranged so as to be connected to a 1 st specific pattern portion of the conductive pattern and to extend in the longitudinal direction to a 1 st specific position in a width direction of the sheet substrate intersecting with the longitudinal direction, the conductive 2 nd auxiliary pattern being arranged so as to be connected to a 2 nd specific pattern portion of the conductive pattern different from the 1 st specific pattern portion and to extend in the longitudinal direction to a 2 nd specific position in the width direction of the sheet substrate different from the 1 st specific position, and the plating apparatus includes: a 1 st liquid-contacting section for contacting a surface of the sheet substrate with a 1 st electrolytic plating solution over a predetermined distance in the longitudinal direction; a 1 st electrode member provided upstream or downstream of the 1 st liquid-contacting portion with respect to a conveying direction of the sheet substrate, for applying a voltage for electrolytic plating to the 1 st electrolytic plating liquid in contact with the 1 st auxiliary pattern; a 2 nd liquid-contacting section for bringing the surface of the sheet substrate electrolytically plated with the 1 st electrolytic plating solution into contact with a 2 nd electrolytic plating solution different from the 1 st electrolytic plating solution at a predetermined distance along the longitudinal direction; and a 2 nd electrode member provided upstream or downstream of the 2 nd liquid-contacting portion with respect to the sheet substrate conveyance direction, for applying a voltage for electrolytic plating to the 2 nd electrolytic plating liquid in contact with the 2 nd auxiliary pattern.

A 6 th aspect of the present invention is a plating apparatus for selectively plating a portion of a conductive pattern formed of a conductor on a surface of a long sheet substrate while conveying the sheet substrate in a longitudinal direction, the conductive pattern being formed on the sheet substrate, the conductive pattern being connected to each of a 1 st specific pattern portion and a 2 nd specific pattern portion different from the 1 st specific pattern portion and extending in the longitudinal direction, the plating apparatus including: a 1 st liquid-contacting section for contacting a surface of the sheet substrate with a 1 st electrolytic plating solution over a predetermined distance in the longitudinal direction; a 1 st electrode member provided upstream or downstream of the 1 st liquid-contacting portion with respect to a conveying direction of the sheet substrate, for applying a voltage to the 1 st electrolytic plating solution in contact with the auxiliary pattern; a cutting unit for cutting off electrical connection between the 1 st specific pattern portion and the auxiliary pattern after the electrolytic plating with the 1 st electrolytic plating solution; a 2 nd liquid-contacting section for bringing the surface of the sheet substrate electrolytically plated with the 1 st electrolytic plating solution into contact with a 2 nd electrolytic plating solution over a predetermined distance in the longitudinal direction; and a 2 nd electrode member provided on an upstream side or a downstream side of the 2 nd liquid-contacting portion with respect to a conveying direction of the sheet substrate, for applying a voltage to the 2 nd electrolytic plating liquid in contact with the auxiliary pattern.

A 7 th aspect of the present invention is a sensor device for inspecting a specific component contained in a subject based on an electrical change between a plurality of electrodes when the plurality of electrodes are brought into contact with the subject, the sensor device including a substrate for supporting the plurality of electrodes at predetermined intervals, and a 1 st layer of each of the plurality of electrodes being formed of a 1 st conductive material, a 1 st electrode of the plurality of electrodes being formed of a film in which a 2 nd conductive material different from the 1 st conductive material is deposited on the 1 st layer by electrolytic plating, and a 2 nd electrode of the plurality of electrodes being formed of a film in which a 3 rd conductive material different from the 1 st conductive material and the 2 nd conductive material is deposited on the 1 st layer by electrolytic plating.

A 8 th aspect of the present invention is a sensor device for inspecting a specific component contained in a subject based on a change in electrical properties between a plurality of electrodes when the plurality of electrodes are brought into contact with the subject, wherein a substrate on which the plurality of electrodes are mounted at predetermined intervals and a 1 st layer of each of the plurality of electrodes are formed of a 1 st conductive material, the 1 st and 2 nd electrodes of the plurality of electrodes have a 2 nd layer formed by laminating a 2 nd conductive material different from the 1 st conductive material as a thin film on the 1 st layer by electrolytic plating, and the 2 nd electrode further has a 3 rd layer formed by laminating a 3 rd conductive material different from the 1 st conductive material and the 2 nd conductive material as a thin film on the 2 nd layer by electrolytic plating.

A 9 th aspect of the present invention is a sensor device that is in contact with at least one pair of electrodes of a subject and measures a physical or chemical property of the subject based on an electrical change between the electrodes, the sensor device including: a plurality of electrode portions each having the pair of electrodes formed at each of a plurality of positions along a longitudinal direction of a long flexible sheet substrate; a plurality of detection circuit units provided in each of the electrode units, for detecting an electrical change between the pair of electrodes of the electrode unit; a conductive power line portion formed continuously in the longitudinal direction on the sheet substrate so as to supply a power voltage to each of the detection circuit portions; and a conductive signal transmission line portion formed continuously in the longitudinal direction on the sheet substrate for transmitting a detection signal detected by each of the detection circuit portions; the pair of electrodes has a 1 st layer made of the same 1 st conductive material as the wiring pattern portion for the power line portion, and at least one of the pair of electrodes has a 2 nd layer formed by laminating a 2 nd conductive material different from the 1 st conductive material on the 1 st layer by electrolytic plating.

Drawings

Fig. 1 is a schematic configuration diagram showing a schematic configuration of a plating apparatus according to embodiment 1.

Fig. 2 is a diagram showing an example of a conductive pattern and an auxiliary pattern formed on a sheet substrate.

Fig. 3 shows an example of the case where the electrode member of the electrode roller shown in fig. 1 is provided in a region corresponding to the 1 st specific position in the width direction of the sheet substrate on which the 1 st auxiliary pattern is formed.

Fig. 4 shows an example of the case where the electrode member of the electrode roller shown in fig. 1 is provided in a region corresponding to the 2 nd specific position in the width direction of the sheet substrate on which the 2 nd auxiliary pattern is formed.

Fig. 5A and 5B are diagrams showing another modification for applying a plating voltage to the electrode member of the electrode roll shown in fig. 3 or 4.

Fig. 6 is a diagram showing an example of the circuit configuration of the sensor device for measuring a blood glucose level.

Fig. 7 is a diagram showing an example of the conductive pattern and the auxiliary pattern according to embodiment 2.

Fig. 8 is a schematic configuration diagram showing a schematic configuration of a plating apparatus according to embodiment 2.

FIG. 9 is a diagram of a resist layer laminated on the conductive pattern of the sheet substrate.

Fig. 10 is a diagram showing an example of a pattern corresponding to an electrode portion and a wiring of a blood glucose level measurement sensor device according to modification 1 of embodiment 1 and 2.

FIG. 11 is a schematic configuration diagram of a strip sensor device according to embodiment 3.

Fig. 12 is a diagram showing a configuration of a detection unit of the sensor device of fig. 11.

Fig. 13 is a diagram schematically showing the structure of a strip sensor device in which plant seeds are stored.

FIG. 14 is a schematic configuration diagram showing a schematic configuration of a plating apparatus according to embodiment 4.

Fig. 15 is a diagram illustrating a modification example relating to the formation of a conductive pattern for plating treatment in each of embodiments 1 to 4.

FIG. 16 is a schematic configuration diagram showing a schematic configuration of a plating apparatus according to embodiment 5.

FIG. 17 is a schematic configuration diagram showing a schematic configuration of a plating apparatus according to embodiment 6.

FIG. 18 is a schematic configuration diagram showing a schematic configuration of a plating apparatus according to embodiment 7.

Detailed Description

Preferred embodiments of a plating method according to an aspect of the present invention, a plating apparatus for performing the plating method, and a sensor device formed by the plating method are described below in detail with reference to the accompanying drawings. The aspects of the present invention are not limited to the embodiments, and various changes and modifications may be added. That is, the following constituent elements include those which can be easily assumed by the manufacturer and are substantially the same, and the following constituent elements can be appropriately combined. Various omissions, substitutions, and changes in the form of the components may be made without departing from the spirit of the invention.

[ embodiment 1 ]

Fig. 1 is a schematic configuration diagram showing a schematic configuration of a plating apparatus 10 according to embodiment 1. In the following description, unless otherwise noted, an X-Y-Z orthogonal coordinate system in which the gravity direction is the Z direction is set, and the X direction, the Y direction, and the Z direction will be described with reference to arrows shown in the drawings.

The plating apparatus 10 is an apparatus for forming a pattern layer on a flexible film-like sheet substrate FS by applying a plating process thereto. The plating apparatus 10 forms a pattern layer constituting, for example, a flexible display (film-like display) as an electronic device, a film-like touch panel, a film-like color filter for a liquid crystal display panel, a flexible wiring, a flexible sensor, or the like. In the present embodiment, a pattern layer constituting an electrode portion of a sensor device for measuring physical or chemical characteristics of a subject is formed.

The plating apparatus 10 continuously performs plating, cleaning, and drying on a substrate FS conveyed by a so-called Roll-To-Roll (Roll To Roll) method in which the substrate FS is fed from a supply Roll FR1 that winds a sheet substrate (hereinafter referred To as a substrate) FS in a Roll shape, and the fed substrate FS is wound around a recovery Roll FR 2. That is, the plating apparatus 10 continuously performs the plating process, the cleaning process, and the drying process on the substrate FS from the supply of the supply roller FR1 to the winding of the recovery roller FR 2. The substrate FS has a belt-like shape in which the moving direction (conveying direction) of the substrate FS is a long side direction (long) and the width direction is a short side direction (short).

In embodiment 1, the X direction is a direction from the supply roller FR1 toward the recovery roller FR2 (the direction of conveyance of the substrate FS) in a horizontal plane parallel to the installation surface of the plating apparatus 10. The Y direction is a direction orthogonal to the X direction in the horizontal plane, and is a width direction (short side direction) of the substrate FS. The rotation axis of the supply roller FR1 and the rotation axis of the recovery roller FR2 are provided parallel to the XY plane (the floor surface on which the device is provided) and parallel to each other. The Z direction is perpendicular to the X direction and the Y direction (upward direction), and is parallel to the direction in which gravity acts. The conveyance direction of the substrate FS is set to the + X direction, and the direction in which gravity acts is set to the-Z direction.

As a material of the substrate FS, for example, a resin film, a foil (foil) made of metal such as stainless steel or alloy, or the like can be used. As the material of the resin film, for example, at least 1 or more selected from the group consisting of a polyethylene resin, a polyether resin, a polypropylene resin, a polyester resin, an ethylene-ethylene copolymer resin, a polyvinyl chloride resin, a polyphenylene sulfide resin, a polyarylate resin, a cellulose resin, a polyamide resin, a polyimide resin, a polycarbonate resin, a polystyrene resin, and a vinyl acetate resin can be used. The thickness or rigidity (young's modulus) of the substrate FS may be set to a range not to cause a crease or an irreversible wrinkle due to the press bending of the substrate FS. As a base material of the substrate FS, a film of PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PES (polyether sulfone), or the like having a thickness of about 25 to 200 μm is typical of a sheet substrate.

The substrate FS is preferably selected from a material having a thermal expansion coefficient not significantly large, because the substrate FS is subjected to heat during the processing performed in the plating apparatus 10. For example, the coefficient of thermal expansion can be suppressed by mixing an inorganic filler to a resin film. The inorganic filler may be, for example, titanium oxide, zinc oxide, aluminum oxide, silicon oxide, or the like. The substrate FS may be a single layer of an extra thin glass having a thickness of about 100 μm manufactured by a float method or the like, or may be a laminate in which the above resin film, metal foil, or the like is laminated on the extra thin glass. When the substrate FS may not have light transmittance, it may be flexible by rolling a metal material such as aluminum, stainless steel, or copper into a metal foil (foil).

The flexibility of the substrate FS means a property that the substrate FS can be bent without being sheared or broken even if a force of a self weight is applied to the substrate FS. Also, the property of bending due to a force of its own weight is included in flexibility. The degree of flexibility varies depending on the material, size, and thickness of the substrate FS, the layer structure formed on the substrate FS, and the environment such as temperature and humidity. In short, when the substrate FS is accurately wound around the conveying direction switching member such as various conveying rollers and drums provided on the conveying path in the plating apparatus 10 according to embodiment 1, if the substrate FS can be smoothly conveyed without being crushed or broken (cracked or cracked), the flexibility range is referred to.

A conductive pattern is formed on the surface of the substrate FS using a conductive material (conductive material). The conductive pattern has a pattern corresponding to at least the electrode portion E of the sensor device to be manufactured. In embodiment 1, a pattern corresponding to an electrode portion E of a sensor device (sensor device, blood glucose meter) for measuring a blood glucose level, which detects a sugar content contained in human blood (subject), is formed. Further, when the base material of the substrate FS is a metal foil (aluminum, stainless steel, copper, or the like), since it is a conductive material, a heat-resistant insulating film can be deposited with a constant thickness (for example, several μm or less) on the entire surface of the substrate FS, and a conductive pattern can be formed on the insulating film.

Fig. 2 is a diagram showing the entire conductive pattern PT formed on the surface of the substrate FS, including a plurality of patterns PTa (the pattern of the region surrounded by the two-dot chain line in fig. 2) formed at least in accordance with the electrode portion E of the blood glucose level measurement sensor apparatus. The plurality of patterns PTa are formed on the substrate FS in a regular arrangement. The conductive pattern PT is formed in a pattern forming region F on the surface of the substrate FS (on the substrate FS) (see fig. 3 and 4). The conductive material (conductor) forming the conductive pattern PT may be one that allows current to flow, but in embodiment 1, a non-noble metal copper (Cu) is used. The conductive pattern PT may be formed on the substrate FS by performing a photolithography step of an exposure device and an etching step of partially removing a thin film (Cu layer) formed by uniformly laminating a conductive material on the surface of the substrate FS. That is, a photoresist layer is laminated on a thin film formed of a conductive material, and a pattern corresponding to at least the electrode portion E is exposed by an exposure apparatus, followed by development treatment. Thereafter, the thin film of the conductive material (Cu layer) is partially removed by immersing the substrate FS in an etchant and using the photoresist layer after the development process as a mask, thereby exposing the conductive pattern PT.

The conductive pattern PT may be formed by a photo patterning step using an exposure apparatus and an electroless plating step in which deposition is performed by electroless plating. For example, the conductive pattern PT may be deposited by removing only a portion irradiated with ultraviolet rays from the fluorine radicals, uniformly depositing a thin film formed of a photosensitive silane coupling agent (photosensitive plating reducing agent) exhibiting plating reducing ability (amino groups) on the entire surface or a predetermined partial region of the substrate FS, exposing a pattern corresponding to at least the electrode portion E to light with an exposure device, and then bringing (contacting) the surface of the substrate FS with an electroless plating solution (solution containing palladium ions). As another method, a precision ink jet printer or a fine printing plate (relief printing plate, intaglio printing plate, screen printing plate, or the like) that ejects fine droplets onto the surface of the substrate FS may be used to directly draw the conductive pattern PT on the substrate FS using a conductive ink containing metal nanoparticles. In this case, although the method is simpler than the above method using an exposure apparatus, there is a limit to the miniaturization of the line width of the electrode or the wiring portion formed as the conductive pattern PT.

As shown in fig. 2, the conductive pattern PT has a plurality of patterns PTa having shapes corresponding to electrode portions E (details are described in fig. 6) including 3 kinds of electrodes, i.e., a working electrode WE, a counter electrode CE, and a reference electrode (reference electrode) RE, and wirings LW, LC, and LR connected to the respective electrodes. The pattern portion of the working electrode WE has a circular shape, the pattern portion of the reference electrode RE is annularly formed so as to surround the working electrode WE, and the pattern portion of the counter electrode CE is further formed so as to surround the reference electrode RE. A pattern portion of the conductive pattern PT subjected to electrolytic plating (electroplating) with the same material is referred to as a specific pattern portion SPT, and an isolated pattern portion of the conductive pattern PT which is isolated from the other pattern portions is referred to as a specific pattern portion SPT.

In embodiment 1, each of the working electrode WE and the counter electrode CE is electrolytically plated with a 1 st material (for example, a noble metal such as gold, platinum, or palladium), and each of the pattern portions of the wires LW and LC connected to the working electrode WE and the counter electrode CE is also electrolytically plated with the 1 st material (for example, a noble metal such as gold, platinum, or palladium) which is the same material. The pattern portions of the reference electrode RE and the wiring line LR connected to the reference electrode RE are electrolytically plated with a 2 nd material (for example, a noble metal such as silver) different from the 1 st material. Therefore, in the conductive pattern PT shown in fig. 2, the pattern portion of the plurality of patterns PTa where the working electrode WE, the counter electrode CE, and the wires LW and LC are formed becomes the 1 st specific pattern portion SPT (hereinafter referred to as SPT1), and the pattern portion of the plurality of patterns PTa where the reference electrode RE and the wire LR are formed becomes the 2 nd specific pattern portion SPT (hereinafter referred to as SPT 2). The 1 st specific pattern part SPT1 and the 2 nd specific pattern part SPT2 are pattern-designed so as to be electrically disconnected from each other on the substrate FS.

On the substrate FS, fine wiring patterns APTs connected to the respective specific pattern portions SPT and extending in the Y direction, and auxiliary patterns APT connected to the wiring patterns APTs and extending to specific positions in the width direction (Y direction) of the substrate FS in the longitudinal direction (X direction) of the substrate FS are formed. When a plurality of specific pattern portions SPT exist, a plurality of the auxiliary patterns APT (and the wiring patterns APTs) are provided corresponding to the respective specific pattern portions SPT, and the plurality of auxiliary patterns APT (and the wiring patterns APTs) are electrically disconnected from each other. Therefore, the specific positions in the width direction of the substrate FS on which the plurality of auxiliary patterns APT are formed are also different. The conductive material for forming the auxiliary pattern APT may be subjected to an electric current during the electrolytic plating. In embodiment 1, copper (Cu), which is the same material as the conductive pattern PT, is used as a material for forming the auxiliary pattern APT and the wiring patterns APTs, but may be a material different from the material of the conductive pattern PT. The auxiliary pattern APT has a relatively large width in the Y direction so as to be reliably kept in contact with an electrode member (a roller electrode or the like) of one polarity from the power supply for electrolytic plating.

In embodiment 1, since the conductive pattern PT includes the 1 st specific pattern part SPT1 and the 2 nd specific pattern part SPT2, the 1 st auxiliary pattern APT (hereinafter referred to as APT1) connected to the 1 st specific pattern part SPT1 and the 2 nd auxiliary pattern APT (hereinafter referred to as APT2) connected to the 2 nd specific pattern part SPT2 are formed on the substrate FS. The 1 st auxiliary pattern APT1 extends to a 1 st specific position in the width direction of the substrate FS (for example, an end portion on the + Y direction side of the substrate FS) in the length direction of the substrate FS. The 2 nd auxiliary pattern APT2 extends to a 2 nd specific position (for example, an end portion on the-Y direction side of the substrate FS) in the width direction of the substrate FS different from the 1 st specific position in the length direction of the substrate FS.

The auxiliary pattern APT may also be formed on the substrate FS by performing a photolithography step of an exposure device and an etching step of partially removing a thin film formed of a conductive material on the substrate FS on the surface of which the thin film is uniformly laminated. The auxiliary pattern APT may be formed by a photo patterning step using an exposure device and an electroless plating step of depositing a thin film made of a conductive material by electroless plating. The auxiliary pattern APT may be formed simultaneously with the formation of the conductive pattern PT or may be formed at a timing different from the timing of the formation of the conductive pattern PT.

When the pattern portion where the working electrode WE and the wiring LW are formed and the pattern portion where the counter electrode CE and the wiring LC are formed are further electrolytically plated with another material, the pattern portion where the working electrode WE and the wiring LW are formed among the plurality of patterns PTa may be set to the 1 st specific pattern portion SPT1, and the pattern portion where the counter electrode CE and the wiring LC are formed may be set to the 3 rd specific pattern portion SPT 3. The 1 st auxiliary pattern APT1 is connected to the 1 st specific pattern part SPT1, and the 3 rd specific pattern part SPT3 is connected to a 3 rd auxiliary pattern APT3 separately provided. The 1 st specific pattern portion and the 3 rd specific pattern portion are designed so as to be electrically disconnected from each other. Of course, the 1 st auxiliary pattern APT1, the 2 nd auxiliary pattern APT2, and the 3 rd auxiliary pattern APT3 are also arranged so as to be electrically insulated from each other, but a step of forming an insulating layer may be required to achieve the insulation in some cases.

Returning to the description of fig. 1, the plating apparatus 10 includes a control unit 12, a substrate conveying mechanism 14, a processing tank 16, a voltage applying unit 18, a cleaning tank 20, and a drying unit 22. The control unit 12 controls each unit in the plating apparatus 10. The control unit 12 includes a computer and a storage medium storing a program, and the control unit 12 of embodiment 1 functions by the computer executing the program stored in the storage medium.

The substrate conveyance mechanism 14 includes guide rollers R1 to R11. The guide rollers R1 to R11 are provided between the supply roller FR1 and the recovery roller FR2, and are arranged in order from the upstream side in the conveyance direction of the substrate FS. The substrate FS is transported by guide rollers R1 to R11 mounted on the substrate transport mechanism 14, and defines a transport path of the substrate FS transported in the plating apparatus 10. The guide rollers R1 to R11 are disposed so as to support the substrate FS while contacting the substrate FS, and rotate in the longitudinal direction of the substrate FS. The guide rollers R1 to R3, R6, R8, R9, and R11 are disposed so as to contact a surface (back surface) opposite to the front surface (surface to be plated) of the substrate FS. The guide rollers R4, R5, R7, and R10 are disposed so as to contact the surface of the substrate FS. The rotation axes of the supply roller FR1, the recovery roller FR2, and the guide rollers R1 to R11 are parallel to the Y direction. The controller 12 controls the conveyance speed of the substrate FS by controlling motors of unillustrated rotation drive sources provided to the supply roller FR1 and the recovery roller FR 2.

When a motor for driving rotation is attached to each of the supply roller FR1 and the recovery roller FR2, tension in the longitudinal direction can be applied to the substrate FS between the supply roller FR1 and the recovery roller FR2 by controlling the torque of the motor. Therefore, a force measuring device or the like for measuring the tension acting on the substrate FS may be provided to at least 1 of the guide rollers R1 to R11. Further, in order to prevent the position in the width direction of the substrate FS fed out in the longitudinal direction from the feed roller FR1 from varying greatly, an edge sensor for measuring a change in the position of the end (edge) in the width direction of the substrate FS in the Y direction may be provided at a position between the guide rollers R1 and R2 (or at a position immediately after the feed roller FR 1), and an edge position control mechanism (EPC unit) for shifting the position in the Y direction of the feed roller FR1 by servo control in response to the measurement result of the edge sensor may be provided.

The treatment tank (plating tank) 16 holds an electrolytic plating solution LQ1 for performing electrolytic plating treatment on the substrate FS. In the electrolytic plating solution LQ1, any complex ion of noble metals such as gold complex ion, platinum complex ion, or silver complex ion is mixed at a predetermined concentration. The treatment bath 16 is provided with a temperature controller (not shown) for adjusting the temperature of the electrolytic plating liquid LQ1, and the temperature of the electrolytic plating liquid LQ1 is controlled so as to be maintained at an appropriate temperature suitable for plating deposition regardless of changes in the ambient temperature. The guide rollers R4 and R5 are provided in the processing bath 16 so that the surface (processing surface) of the substrate FS is immersed in the electrolytic plating solution LQ1, and the guide rollers R3 and R6 are provided on the + Z direction side with respect to the processing bath 16. The guide rollers R4 and R5 are located on the-Z direction side of the liquid surface (surface) of the electrolytic plating solution LQ1 held in the processing bath 16. Thus, the substrate FS can be conveyed so that a part of the surface of the substrate FS, which is stretched between the guide roller R3 and the guide roller R6 in the longitudinal direction, comes into contact with the electrolytic plating solution LQ1 held in the processing bath 16. The guide rollers R4 and R5 function as liquid-contacting portions that contact the surface (treatment surface) of the substrate FS with the electrolytic plating solution LQ1 at predetermined distances in the longitudinal direction. The guide rollers R4 and R5 themselves, and the rotating shafts thereof, etc., may be made of an insulating material that is not corroded or plated by the electrolytic plating solution LQ 1.

The voltage applying unit 18 applies a voltage for electrolytic plating to the electrolytic plating solution LQ1 under the control of the control unit 12. The voltage applying section 18 includes a power supply section 18a, and an electrode plate 18b and an electrode roll 18c corresponding to the type of metal to be plated. The power supply unit 18a generates a dc voltage, and outputs the generated voltage from 2 output terminals (not shown). The electrode plate 18b is connected to one output terminal (positive electrode side) of the power supply unit 18a and is disposed so as to be in contact with the electrolytic plating solution LQ1 held in the processing bath 16. The other output terminal (negative side) of the power supply unit 18a is grounded and connected to an annular electrode member 19 (see fig. 3 and 4) provided on the outer periphery of the electrode roller 18 c. The entire outer peripheral surface of the electrode roller 18c or the annular portion on which the electrode member 19 is formed is made of an insulator, and is disposed between the guide roller R2 and the guide roller R3 at a position in which the substrate FS is in a dry state before coming into contact with the electrolytic plating solution LQ 1. The electrode roller 18c has a rotation axis (rotation center line) parallel to the Y axis, and is capable of supporting the surface of the substrate FS to rotate in the longitudinal direction of the substrate FS. The electrode roller 18c is disposed so as to rotate in a state where an electrode member 19 provided on the electrode roller 18c is in contact with the surface (treatment surface) of the substrate FS with a predetermined adhesion force. The electrode member 19 is provided on the electrode roller 18c so as to contact the auxiliary pattern APT formed on the substrate FS. When there are a plurality of auxiliary patterns APT, the electrode member 19 is provided on the electrode roller 18c so as to be in contact with only one of the auxiliary patterns APT. That is, the electrode member 19 is provided in a region corresponding to a specific position in the width direction of the substrate FS on which the auxiliary pattern APT is formed. In the example shown in fig. 3, the electrode member 19 is provided in a region corresponding to the 1 st specific position in the width direction of the substrate FS (the end portion on the + Y direction side of the substrate FS) on which the 1 st auxiliary pattern APT1 is formed. Fig. 4 shows an example in which the electrode member 19 is provided in a region corresponding to the 2 nd specific position (end portion on the-Y direction side of the substrate FS) in the width direction of the substrate FS on which the 2 nd auxiliary pattern APT2 is formed.

As an example, the electrode member 19 may be fixed as a thin metal plate (e.g., a copper nickel zinc alloy plate) that is rolled in a tubular shape as shown in fig. 5A so as to cover the insulating film 18d that is annularly coated on a part of the outer peripheral surface of the electrode roller 18c in the Y direction. As shown in fig. 5A, the other output terminal (negative side) of the power supply unit 18a may be connected to a collector brush Ea formed of a thin metal sheet (for example, a phosphor bronze plate) that is elastically deformed with a predetermined pressing force, and the collector brush Ea may be continuously brought into contact with the electrode member 19. Alternatively, as shown in fig. 5B, the rotatable current collecting roller Eb may be continuously brought into contact with the electrode member 19 with a predetermined pressing force. Alternatively, the electrode member 19 may be electrically connected to the other output terminal (negative side) of the power supply unit 18a without providing the current collecting brush Ea or the current collecting roller Eb as shown in fig. 5A and 5B. As an example, the entire electrode roll 18c is made of a conductor (metal), and the outer peripheral surface of the electrode roll 18c except for the annular portion to be the electrode member 19 is covered with an insulating film. The other output terminal (negative side) of the power supply unit 18a may be connected to a bearing (metallic bearing) of the electrode roller 18 c.

Here, as shown in fig. 3, when the electrode member 19 is disposed so as to contact the 1 st auxiliary pattern APT1, the potential on the negative side of the power supply section 18a is applied to the 1 st specific pattern portion SPT1 via the electrode member 19 and the 1 st auxiliary pattern APT 1. Therefore, a voltage for electrolytic plating is applied to the electrolytic plating solution LQ1 between the electrode plate 18b to which the potential on the positive electrode side of the power supply unit 18a is applied and which is in contact with the electrolytic plating solution LQ1 and the 1 st specific pattern portion SPT1 formed on the substrate FS in contact with the electrolytic plating solution LQ 1. Therefore, a thin film of a noble metal is deposited on the 1 st auxiliary pattern APT1 and the 1 st specific pattern part SPT1 which are in contact with the electrolytic plating liquid LQ 1. Since the substrate FS is continuously conveyed in the conveying direction (+ X direction), the thin film of the noble metal is sequentially deposited on the 1 st specific pattern portion SPT1 formed on the substrate FS in the longitudinal direction. In embodiment 1, a thin film of a noble metal other than silver (e.g., platinum (Pt), gold (Au), or the like) is formed on the 1 st auxiliary pattern APT1 and the 1 st specific pattern portion SPT1 by electrolytic plating. As is clear from the arrangement of fig. 3, the relationship between the dimension of the electrode member 19 annularly formed on the cylindrical electrode roller 18c in the Y direction and the width of the 1 st auxiliary pattern APT1 in the Y direction is set in consideration of the gap between the pattern forming region F and the 1 st auxiliary pattern APT1 in the Y direction and the positioning accuracy of the substrate FS in the Y direction by the EPC unit.

As shown in fig. 4, when the electrode member 19 is disposed so as to contact the 2 nd auxiliary pattern APT2, the potential on the negative side of the power supply unit 18a is applied to the 2 nd specific pattern portion SPT2 via the electrode member 19 and the 2 nd auxiliary pattern APT 2. Therefore, a thin film of a noble metal can be deposited on the 2 nd auxiliary pattern APT2 and the 2 nd specific pattern SPT2 which are in contact with the electrolytic plating liquid LQ 1. Therefore, in the case of fig. 3 and 4, by changing the material of the complex ions mixed into the electrolytic plating solution LQ1, thin films of a material different from the material of the thin films formed in the 1 st auxiliary pattern APT1 and the 1 st specific pattern part SPT can be formed in the 2 nd auxiliary pattern APT and the 2 nd specific pattern part SPT. In the present embodiment, a thin film of silver (Ag) is formed on the 2 nd auxiliary pattern APT2 and the 2 nd specific pattern part SPT 2.

The cleaning tank 20 is used for cleaning the electrolytically plated substrate FS under the control of the controller 12. In the cleaning tank 20, a guide roller R7 for changing the conveyance direction of the substrate FS from the-Z direction to the + Z direction is provided, a cleaning nozzle 20a for discharging the cleaning liquid (e.g., water) LQ2 toward the front surface (plating surface) of the substrate FS is provided above the guide roller R7, and a cleaning nozzle 20c for discharging the cleaning liquid (e.g., water) LQ2 toward the back surface (back surface side of the plating surface) of the substrate FS is provided on the side of the guide roller R7. The upper cleaning nozzle 20a discharges the cleaning liquid LQ2 in a spray-like manner in the-X direction side and the 2-direction X direction side. The guide roller R7 is provided in the washing tank 20 on the-Z direction side with respect to the washing nozzle 20a, and the guide rollers R6 and R8 are provided on the + Z direction side with respect to the washing tank 20. Thereby, the substrate FS directed from the guide roller R6 toward the guide roller R7 is conveyed to the-Z direction side so that the surface (plating surface) thereof is directed toward the cleaning nozzle 20a side at a position on the-X direction side with respect to the cleaning nozzle 20 a. The substrate FS directed from the guide roller R7 toward the guide roller R8 is conveyed to the + Z direction side so that the surface (processing surface) thereof is directed toward the cleaning nozzle 20a at the position on the + X direction side with respect to the cleaning nozzle 20 a. Therefore, the surface of the substrate FS directed from the guide roller R6 toward the guide roller R7 is cleaned by the cleaning liquid LQ2 discharged toward the-X direction side from the cleaning nozzle 20a provided in the cleaning tank 20. Similarly, the surface of the substrate FS directed from the guide roller R7 toward the guide roller R8 is cleaned by the cleaning liquid LQ2 discharged toward the + X direction side from the cleaning nozzle 20a provided in the cleaning tank 20. Similarly, the back surface of the substrate FS directed from the guide roller R6 toward the guide roller R7 is cleaned by the cleaning liquid LQ2 discharged toward the-X direction side from the cleaning nozzle 20c, and the back surface of the substrate FS directed from the guide roller R7 toward the guide roller R8 is cleaned by the cleaning liquid LQ2 discharged toward the + X direction side from the cleaning nozzle 20 c. Further, a discharge port 20b for discharging the wash liquid LQ2 discharged from the wash nozzles 20a and 20c to the outside of the wash tank 20 is provided in the bottom wall of the wash tank 20.

The drying unit 22 performs a drying process on the substrate FS subjected to the cleaning process under the control of the control unit 12. A heat generation source 22a that generates heat is provided in the drying part 22. The heat generation source 22a may be a blower for spraying drying air (hot air) such as dry air onto the surface of the substrate FS, an infrared light source, a ceramic heater, or the like. The guide roller R10 is located inside the drying section 22 (inside the casing of the drying section 22), and is provided on the-Z direction side with respect to the heat generation source 22a, and the guide rollers R9, R11 are provided on the + Z direction side with respect to the drying section 22. Thus, the substrate FS directed from the guide roller R9 toward the guide roller R10 is conveyed to the-Z direction side so that the surface (processed surface) thereof is directed toward the heat generation source 22a at a position on the-X direction side with respect to the heat generation source 22 a. The substrate FS directed from the guide roller R10 toward the guide roller R11 is conveyed to the + Z direction side so that the surface (processed surface) thereof faces the heat generation source 22a at a position on the + X direction side with respect to the heat generation source 22 a. Therefore, the surface of the substrate FS directed from the guide roller R9 toward the guide roller R11 can be dried efficiently by the heat generation source 22a provided in the drying section 22. The temperature in the drying section 22 has an upper limit determined by the material of the base material of the substrate FS. For example, the substrate FS whose base material is PET resin has an upper limit of about 105 ℃, and the substrate FS whose base material is PEN resin, polycarbonate resin, or metal foil may be set to an upper limit temperature equal to or higher than the upper limit temperature of the substrate FS whose base material is PET resin. However, if the temperature during drying is high, the substrate FS whose base material is made of resin may expand and contract greatly. Since the conductive pattern PT, the auxiliary pattern APT, the wiring pattern APTs, and the like formed on the substrate FS are metallic, various patterns on the substrate FS have cracks (cracks) or are peeled off from the substrate FS due to a large difference in thermal expansion coefficient. To avoid this, the drying temperature may be set so as not to exceed the allowable degree of expansion and contraction (%, ppm) of the substrate FS (base material).

Using the plating apparatus 10 having the above-described configuration and the substrate FS on which the conductive pattern PT and the auxiliary pattern APT are formed, the material of the thin film formed on the conductive pattern PT can be made different for each specific pattern portion SPT. That is, thin films of different materials can be selectively formed on the conductive pattern PT. Specifically, first, a plurality of plating apparatuses 10 are prepared. Then, the treatment bath 16 of the 1 st plating treatment apparatus 10 holds an electrolytic plating solution (1 st electrolytic plating solution) LQ1 into which the 1 st noble metal complex ion (for example, a complex ion of a noble metal other than silver, such as a gold complex ion or a platinum complex ion) is mixed, and the electrode roll 18c of the 1 st plating treatment apparatus 10 is provided so that the electrode member (1 st electrode member) 19 is in contact with the 1 st auxiliary pattern APT1 as shown in fig. 3. Thereby, a 1 st noble metal (e.g., gold or platinum) thin film is formed on the 1 st specific pattern portion SPT 1. Then, a recovery roller FR2 for the 1 st plating apparatus 10 loaded with the recovered substrate FS was used as a supply roller FR1 for the 2 nd plating apparatus 10. The treatment bath 16 of the 2 nd plating apparatus 10 holds an electrolytic plating solution (2 nd electrolytic plating solution) LQ1 into which complex ions of silver, which is a 2 nd noble metal different from the 1 st noble metal, are mixed, and the electrode roll 18c of the 2 nd plating apparatus 10 is provided so that the electrode member (2 nd electrode member) 19 is in contact with the 2 nd auxiliary pattern APT2 as shown in fig. 4. Thereby, a silver thin film is formed on the 2 nd specific pattern part SPT 2.

Further, the 1 st specific position in the width direction of the substrate FS where the 1 st auxiliary pattern APT1 is formed and the 2 nd specific position in the width direction (Y direction) of the substrate FS where the 2 nd auxiliary pattern APT2 is formed may be set symmetrically with respect to the center in the width direction of the substrate FS. Thus, the electrode roller 18c is mounted in a reversed manner (rotated by 180 degrees in a plane parallel to the XY plane), whereby the electrode member 19 can be switched between contact with the 1 st auxiliary pattern APT1 and contact with the 2 nd auxiliary pattern APT 2. In the configuration of fig. 5A and 5B in which the current collecting brush Ea or the current collecting roller Eb is provided, the electrode members 19 are formed in advance at positions corresponding to the 1 st auxiliary pattern APT1 and the 2 nd auxiliary pattern APT2 on both sides in the Y direction on the electrode roller 18c, and in the 1 st plating apparatus 10, the current collecting brush Ea or the current collecting roller Eb is provided for the electrode member 19 at a position corresponding to the 1 st auxiliary pattern APT1 among the electrode members 19 at 2 sites, and in the 2 nd plating apparatus 10, the current collecting brush Ea or the current collecting roller Eb is provided for the electrode member 19 at a position corresponding to the 2 nd auxiliary pattern APT 1.

Since the reference electrode RE is required to form a thin film of silver chloride (AgCl) on the thin film of silver, the recovery roller FR2 for the 2 nd plating apparatus 10 loaded with the recovered substrate FS is used as the supply roller FR1 for the 3 rd plating apparatus 10. The treatment bath 16 of the 3 rd plating apparatus 10 holds a potassium chloride solution saturated with silver chloride as an electrolytic plating solution (3 rd electrolytic plating solution) LQ 1. The electrode roll 18c of the 3 rd plating apparatus 10 is provided so that the electrode member 19 (the 3 rd electrode member 19) is in contact with the 2 nd auxiliary pattern APT2 as shown in fig. 4. Unlike the plating apparatuses 1 and 2, the 3 rd plating apparatus 10 is connected to an output terminal on the negative side of the power supply unit 18a at the electrode plate (3 rd electrode terminal) 18b, and connected to an output terminal on the positive side of the power supply unit 18a at the electrode member (3 rd electrode member) 19. Thereby, a thin film of silver chloride can be formed on the 2 nd specific pattern portion SPT2 (reference electrode RE and wiring LR).

Therefore, the working electrode WE, the counter electrode CE, and the wirings LW and LC have a laminated structure in which the 1 st layer is formed of a thin film of a conductive material (e.g., copper) which is a non-noble metal, and the 2 nd layer is formed of a thin film of a noble metal other than silver (e.g., gold, platinum, palladium, or the like). The reference electrode RE and the wiring line LR have a laminated structure in which the 1 st layer is formed of a thin film of a non-noble metal conductive material (e.g., copper), the 2 nd layer is formed of a thin film of silver, and the 3 rd layer is formed of a thin film of silver chloride.

Further, the substrate FS is collected by the collection roller FR2 for each plating apparatus 10, but the substrate FS may be collected for the first time by the collection roller FR2 after the plurality of plating apparatuses 10 are continuously subjected to the treatment (e.g., electrolytic plating treatment) and the plurality of plating apparatuses 10 are all subjected to the treatment (e.g., electrolytic plating treatment). In this case, the substrate FS supplied from the supply roller FR1 is first conveyed into the 1 st plating apparatus 10, then continuously conveyed into the 2 nd plating apparatus 10 without being collected by the collection roller FR2, and then continuously conveyed into the 3 rd plating apparatus 10. Then, the substrate FS sent out from the 3 rd plating apparatus 10 is first taken up by the recovery roll FR 2. In this case, in order to avoid simultaneous energization of the 1 st specific pattern part SPT1 and the 2 nd specific pattern part SPT2 which are in contact with the electrolytic plating solution LQ1 held in the processing bath 16 of each plating apparatus 10, the 1 st auxiliary pattern APT and the 2 nd auxiliary pattern APT2 must be electrically disconnected from each other at predetermined intervals in the longitudinal direction. That is, the non-conductive section in which the auxiliary patterns APT and APT2 are not formed over a predetermined length in the longitudinal direction may be set at a position on the substrate FS corresponding to the Y-direction position of the electrode member 19 of the electrode roller 18 c. The electrode roller 18c is disposed between the guide roller R2 and the guide roller R3, but may be disposed at a position separated from the electrolytic plating solution LQ1, i.e., a position not in contact with the electrolytic plating solution LQ1, on the upstream side or the downstream side of the liquid contact portion (guide rollers R4 and R5). In this case, the electrode roller 18c may be provided on any one of the conveyance paths between the guide rollers R8 to R11 in fig. 1, for example, or may be replaced with the guide roller R10 in fig. 1.

Here, the circuit configuration of the blood glucose level measurement sensor device 30 will be briefly described with reference to fig. 6. The blood glucose level measurement sensor device 30 includes at least a rectangular electrode portion E (approximately 2mm square) including a working electrode WE, a counter electrode CE, and a reference electrode RE, a voltage follower 32 including an operational amplifier OP2, a DA converter 34, a measurement control unit 36, an operational amplifier OP1, a current-voltage conversion unit 38 including an operational amplifier OP3, and an AD converter 40. The electrode portion E is coated with a reagent (including a medium and an enzyme) such as glucose, which reacts with the blood glucose concentration, or a test paper attached with an impregnation reagent. When blood or the like is dropped onto the electrode portion E and the blood diffuses so as to cover the working electrode WE, the counter electrode CE, and the reference electrode RE, ions corresponding to the blood glucose concentration are generated in the blood by a chemical reaction between the reagent and the blood. The voltage follower 32 outputs a voltage VRE generated in the reference electrode RE by ions in blood (hereinafter referred to as a reference voltage). The voltage follower 32 is formed by an operational amplifier OP2 with high input impedance. The DA converter 34 outputs a voltage (hereinafter referred to as a reference voltage) Vref corresponding to a reference voltage value (command value) output from the measurement control unit 36. The operational amplifier OP1 feedback-controls the voltage of the counter electrode CE so that the difference between the reference voltage Vref and the reference voltage VRE is always 0. The current-voltage converter 38 converts a current Iw flowing from the counter electrode CE to the working electrode WE into a voltage (hereinafter referred to as a measurement voltage) Vo. The current-voltage conversion section 38 is composed of at least an operational amplifier OP3 and a resistor Rw. The measurement voltage Vo can be expressed by a relational expression of Vo — Rw × Iw. The AD converter 40 converts the measurement voltage Vo to a digital value of, for example, 10 bits and outputs the converted value to the measurement control unit 36. The measurement control unit 36 is programmed in advance to change the reference voltage value Vref output from the DA converter 34 in a stepwise or continuous manner within a fixed range, and measures the blood glucose level by monitoring the tendency of the measurement voltage Vo to change in accordance with the change in the reference voltage Vref.

As described above, the plating apparatus 10 according to embodiment 1 selectively performs plating on a part of the conductive pattern PT formed on the surface of the substrate FS and made of an electric conductor while conveying the substrate FS in the longitudinal direction, and includes: a liquid contact unit (processing tank 16, guide rollers R4, R5) for bringing the surface of the substrate FS into contact with the electrolytic plating solution LQ1 over a predetermined distance in the longitudinal direction; an electrode member 19 which is provided on the upstream side or the downstream side of the liquid-receiving section with respect to the conveyance direction of the substrate FS and which is in contact with a conductive auxiliary pattern APT formed on the substrate FS so as to be connected to a specific pattern portion SPT of the conductive pattern PT on which electrolytic plating is performed and to extend in the longitudinal direction to a specific position in the width direction of the substrate FS intersecting with the longitudinal direction; and a power supply unit 18a for applying a voltage for electrolytic plating to the electrolytic plating solution LQ1 through the electrode member 19. Thereby, the electrolytic plating can be performed only for the specific pattern portion SPT in the conductive pattern PT.

The electrode member 19 is provided on the surface of the support substrate FS and in a region corresponding to a specific position where the auxiliary pattern APT is formed in the outer periphery of the electrode roller 18c rotatable in the longitudinal direction. This makes it possible to bring the electrode member 19 into contact with the auxiliary pattern APT on the substrate FS while suppressing friction between the electrode member 19 and the auxiliary pattern APT on the substrate FS. Therefore, the auxiliary pattern APT may be prevented from being ground due to contact friction with the electrode member 19. Further, by the presence of the plurality of specific pattern portions SPT, even when the plurality of auxiliary patterns APT are formed, only one specific pattern portion SPT may be subjected to electrolytic plating.

The specific pattern portion SPT is formed as an isolated pattern portion isolated in the conductive pattern PT. Therefore, in the conductive pattern PT, no current flows into the pattern portions other than the specific pattern portion SPT connected to the auxiliary pattern APT in contact with the electrode member 19, and thus the pattern portions other than the specific pattern portion SPT are not subjected to electrolytic plating. Therefore, the electrolytic plating process can be performed only on the specific pattern portion SPT connected to the auxiliary pattern APT with which the electrode member 19 is in contact.

The conductive 1 st auxiliary pattern APT1 and the conductive 2 nd auxiliary pattern APT2 are formed on the substrate FS, the conductive 1 st auxiliary pattern APT1 is connected to the 1 st specific pattern portion SPT1 in the conductive pattern PT and is arranged to extend in the longitudinal direction to the 1 st specific position in the width direction of the substrate FS intersecting with the longitudinal direction, and the conductive 2 nd auxiliary pattern APT2 is arranged to be connected to the 2 nd specific pattern portion SPT2 different from the 1 st specific pattern portion SPT1 in the conductive pattern PT and to extend in the longitudinal direction to the 2 nd specific position in the width direction of the substrate FS intersecting with the longitudinal direction different from the 1 st specific position. Further, the method comprises: a 1 st liquid-contacting unit (the treatment bath 16 in the 1 st plating apparatus 10) for bringing the surface of the substrate FS into contact with the 1 st electrolytic plating liquid LQ1 over a predetermined distance in the longitudinal direction; a 1 st electrode member 19 provided upstream or downstream of the 1 st liquid contact portion with respect to the conveyance direction of the substrate FS, for applying a voltage for electrolytic plating to the 1 st electrolytic plating liquid LQ1 in contact with the 1 st auxiliary pattern APT 1; a 2 nd liquid-contacting section (the treatment bath 16 in the 2 nd plating treatment apparatus 10) for bringing the surface of the substrate FS electrolytically plated with the 1 st electrolytic plating liquid LQ1 into contact with a 2 nd electrolytic plating liquid LQ1 different from the 1 st electrolytic plating liquid LQ1 at a predetermined distance in the longitudinal direction; and a 2 nd electrode member 19 provided upstream or downstream of the 2 nd liquid contact portion with respect to the conveyance direction of the substrate FS, for applying a voltage for electrolytic plating to the 2 nd electrolytic plating liquid LQ1 in contact with the 2 nd auxiliary pattern APT 2. Thereby, different electrolytic plating can be performed for the plurality of specific pattern portions SPT in the conductive pattern PT. The electrode member 19 of the electrode roll 18c may be disposed so that at least a part thereof is in contact with the 1 st or 2 nd electrolytic plating liquid LQ1 stored in the treatment bath 16 of the 1 st or 2 nd plating apparatus 10 and also in contact with the 1 st auxiliary pattern APT1 or the 2 nd auxiliary pattern APT 2. In this case, since the surface of the electrode member 19 is also plated with the electrolytic plating liquid LQ1, it is preferable to replace the electrode member 19 at an appropriate timing or to form the electrode member 19 from a material which is weak in adhesion and easily peeled off even if a plating layer is deposited (deposited) on the surface.

[ embodiment 2 ]

Next, although embodiment 2 will be described, the same components as those described in embodiment 1 will be denoted by the same reference numerals, and only different portions will be described. In embodiment 2, the pattern portion of the conductive pattern PT (the plurality of patterns PTa) where the working electrode WE and the wiring LW are formed is defined as the 1 st specific pattern portion SPT1, the pattern portion where the reference electrode RE and the wiring LR are formed is defined as the 2 nd specific pattern portion SPT2, and the pattern portion where the counter electrode CE and the wiring LC are formed is defined as the 3 rd specific pattern portion SPT 3. The 1 st to 3 rd specific pattern parts SPT1 to SPT3 are connected to the same auxiliary pattern APT (hereinafter referred to as APTa). That is, as shown in fig. 7, the auxiliary pattern APTa according to embodiment 2 is formed so as to be connected to each of the 1 st specific pattern portion SPT1, the 2 nd specific pattern portion SPT2, and the 3 rd specific pattern portion SPT3 via the wiring patterns APTs extending in the Y direction and extend in the longitudinal direction of the substrate FS. It is needless to say that the conductive pattern PT, the auxiliary pattern APTa, and the wiring patterns APTs according to embodiment 2 are formed of a conductive material (e.g., copper).

As shown in fig. 8, in the plating apparatus 10a according to embodiment 2, a pattern cutting unit 50 is provided upstream of the liquid-contacting unit (the processing bath 16, the guide rollers R4, R5) and before the substrate FS comes into contact with the electrolytic plating solution LQ 1. The pattern cutting unit 50 (hereinafter also simply referred to as a cutting unit 50) is a punch for cutting electrical connection between the working electrode WE, the counter electrode CE, and the wires LW and LC and the auxiliary pattern APTa to form a hole in the substrate FS. The cutting unit 50 may open a hole in the substrate FS by pressing the bar-shaped punching unit against the substrate FS, or may open a hole in the substrate FS by using a laser. The cutting section 50 may be other than a punch since it is sufficient to cut the electrical connection between the working electrode WE, the counter electrode CE, and the wires LW and LC and the auxiliary pattern APTa. In embodiment 2, the electrode roller 18c is provided so that the electrode member 19 is in contact with the auxiliary pattern APTa. In embodiment 2, since there are only 1 auxiliary pattern APTa, the electrode member 19 may be provided on the entire outer circumferential surface of the electrode roller 18 c.

By using the plating apparatus 10a having the above-described configuration and the substrate FS on which the conductive pattern PT and the auxiliary pattern APTa are formed, the material of the thin film deposited on the conductive pattern PT by electrolytic plating can be made different for each specific pattern portion SPT. Specifically, first, a plurality of plating apparatuses 10a are prepared. Then, the treatment bath 16 of the 1 st plating apparatus 10a holds an electrolytic plating solution (1 st electrolytic plating solution) LQ1 into which complex ions (for example, gold complex ions) of the 1 st noble metal are mixed. Thereby, a thin film of the 1 st noble metal (gold) is laminated on the entire conductive pattern PT (the 1 st to 3 rd specific pattern portions SPT1 to SPT3) by electrolytic plating. Since the cutting portion 50 is not used when forming the thin film of the 1 st noble metal, the thin film of the 1 st noble metal can be formed on the entire conductive pattern PT by the plating apparatus 10 described in the above-described embodiment 1. Further, the electrode plate (1 st electrode terminal) 18b of the 1 st plating apparatus 10a is connected to the positive side of the power supply unit 18a, and the electrode member (1 st electrode member) 19 is connected to the negative side of the power supply unit 18 a.

Then, the recovery roller FR2 for the 1 st plating apparatus 10a loaded with the recovered substrate FS is used as the supply roller FR1 for the 2 nd plating apparatus 10 a. The treatment bath 16 of the 2 nd plating apparatus 10a holds an electrolytic plating solution (2 nd electrolytic plating solution) LQ1 into which complex ions of a 2 nd noble metal (for example, platinum) different from the 1 st noble metal are mixed. The cutting section 50 cuts off electrical connection between the 3 rd specific pattern portion SPT3 and the auxiliary pattern APTa. Specifically, the cutting unit 50 cuts the electrical connection between the wiring LC connected to the counter electrode CE and the auxiliary pattern APTa, and holes are formed in a region CW (having a size equal to or larger than the line width of the wiring LC) including the wiring LC on the substrate FS shown in fig. 7. This region CW is set in the vicinity of a position where the wiring patterns APTs connected to the conductive patterns APTa are connected to the wirings LC extending in the X direction. The cutting section 50 is formed by forming holes in the entire pattern PTa in the region CW before the substrate FS is brought into contact with the 2 nd electrolytic plating solution LQ 1. Therefore, a thin film of the 2 nd noble metal (platinum) is further laminated only to the 1 st specific pattern part SPT1 and the 2 nd specific pattern part SPT2 in the conductive pattern PT by the electrolytic plating. That is, the 2 nd thin film made of the 2 nd noble metal (platinum) is formed only on the working electrode WE, the reference electrode RE, and the wirings LW and LR. Further, the electrode plate (2 nd electrode terminal) 18b of the 2 nd plating apparatus 10a is connected to the positive side of the power supply unit 18a, and the electrode member (2 nd electrode member) 19 is connected to the negative side of the power supply unit 18 a.

Thereafter, a recovery roller FR2 for the 2 nd plating apparatus 10a loaded with the recovered substrate FS was used as a supply roller FR1 for the 3 rd plating apparatus 10 a. The treatment bath 16 of the 3 rd plating apparatus 10a holds an electrolytic plating solution (3 rd electrolytic plating solution) LQ1 into which complex ions of a 3 rd noble metal (for example, silver) different from the 1 st noble metal and the 2 nd noble metal are mixed. The cutting unit 50 cuts off electrical connection between the 1 st specific pattern portion SPT1 and the auxiliary pattern APTa. Specifically, the cutting unit 50 cuts the electrical connection between the wire LW connected to the working electrode WE and the auxiliary pattern APTa, and a hole is formed in a region WW (having a size equal to or larger than the line width of the wire LW) including the wire LW on the substrate FS shown in fig. 7. This region WW is set in the vicinity of a position where the wiring patterns APTs connected to the conductive patterns APTa are connected to the wiring LW extending in the X direction. The cutting unit 50 forms holes in the area WW of each of the entire patterns PTa in the substrate FS before contacting the 3 rd electrolytic plating solution LQ 1. Therefore, a thin film of the 3 rd noble metal (silver) is further laminated only to the 2 nd specific pattern portion SPT2 in the conductive pattern PT by the electrolytic plating. That is, a thin film of the 3 rd noble metal (silver) is formed only on the reference electrode RE and the wiring LR. Further, the electrode plate (3 rd electrode terminal) 18b of the 3 rd plating apparatus 10a is connected to the positive side of the power supply unit 18a, and the electrode member (3 rd electrode member) 19 is connected to the negative side of the power supply unit 18 a.

Finally, since a thin film of silver chloride (AgCl) must be formed on the thin film of silver for the reference electrode RE, the recovery roller FR2 for the 3 rd plating apparatus 10a loaded with the recovered substrate FS is used as the supply roller FR1 for the 4 th plating apparatus 10 a. The treatment bath 16 of the 4 th plating apparatus 10a holds a potassium chloride solution saturated with silver chloride as an electrolytic plating solution (4 th electrolytic plating solution) LQ 1. The electrode plate (4 th electrode terminal) 18b of the 4 th plating apparatus 10a is connected to the negative electrode side of the power supply unit 18a, and the electrode member (4 th electrode member) 19 is connected to the positive electrode side of the power supply unit 18 a. Thus, the voltage for plating is applied only to the 2 nd specific pattern portion SPT2 (reference electrode RE and wiring LR) via the auxiliary pattern APTa and the wiring pattern APTs, and a silver chloride thin film is formed. Since the cutting portion 50 is not used when forming the thin film of silver chloride, the thin film of silver chloride can be formed on the 2 nd specific pattern portion SPT2 by the plating apparatus 10 of fig. 1 described in the above-described embodiment 1.

Therefore, the counter electrode CE and the wiring LC have a laminated structure in which the 1 st layer is formed of a thin film of a non-noble metal, such as copper, and the 2 nd layer is formed of a thin film of a 1 st noble metal, such as gold. The working electrode WE and the wiring LW have a laminated structure in which the 1 st layer is formed of a thin film of a non-noble metal, a conductive material (e.g., copper), the 2 nd layer is formed of a thin film of a 1 st noble metal (e.g., gold), and the 3 rd layer is formed of a thin film of a 2 nd noble metal (e.g., platinum) different from the 1 st noble metal. The reference electrode RE and the wiring line LR have a laminated structure in which the 1 st layer is formed of a thin film of a non-noble metal, a thin film of a noble metal 1, a thin film of a noble metal 2, a thin film of a silver 4, and a thin film of a silver chloride 5.

Further, the substrate FS is collected by the collection roller FR2 for each plating apparatus 10a, but the substrate FS may be collected by the collection roller FR2 for the first time after the treatment (electrolytic plating treatment, etc.) performed by a plurality of plating apparatuses 10a is continuously performed on the substrate FS and after all the treatments (electrolytic plating treatment, etc.) performed by the plurality of plating apparatuses 10a are performed. In this case, the substrate FS supplied from the supply roller FR1 is first conveyed into the 1 st plating apparatus 10a, then is continuously conveyed into the 2 nd plating apparatus 10 without being collected by the collection roller FR2, and then is continuously conveyed into the 3 rd plating apparatus 10 and the 4 th plating apparatus 10 a. Then, the substrate FS sent out from the 4 th plating apparatus 10a is wound up by a recovery roll FR2 for the first time. The electrode roller 18c is disposed between the guide roller R2 and the guide roller R3, but the electrode roller 18c may be disposed at a position separated from the electrolytic plating solution LQ1, i.e., a position not in contact with the electrolytic plating solution LQ1, on the upstream side or the downstream side of the liquid-contacting portion (the treatment tank 16, the guide rollers R4, R5).

As described above, the plating apparatus 10a according to embodiment 2 selectively applies plating to a part of the conductive pattern PT formed of an electric conductor on the surface of the substrate FS while conveying the substrate FS in the longitudinal direction, and forms the conductive auxiliary pattern APTa on the substrate FS, the conductive auxiliary pattern APTa being connected to each of the 1 st specific pattern portion SPT1 and the 2 nd specific pattern portion SPT2 different from the 1 st specific pattern portion SPT1 in the conductive pattern PT and being arranged to extend in the longitudinal direction, and the plating apparatus 10a includes: a 1 st liquid-contacting section for bringing the surface of the substrate FS into contact with a 1 st electrolytic plating liquid LQ1 over a predetermined distance in the longitudinal direction; a 1 st electrode member 19 provided upstream or downstream of the 1 st liquid-contacting portion with respect to the conveyance direction of the substrate FS, for applying a voltage to the 1 st electrolytic plating liquid LQ1 in contact with the auxiliary pattern APTa; a pattern cutting unit 50 for cutting electrical connection between the 1 st specific pattern part SPT1 and the auxiliary pattern APTa after the electrolytic plating by the 1 st electrolytic plating solution LQ 1; a 2 nd liquid-contacting section for bringing the surface of the sheet substrate FS electrolytically plated with the 1 st electrolytic plating solution LQ1 into contact with the 2 nd electrolytic plating solution LQ1 over a predetermined distance in the longitudinal direction; and a 2 nd electrode member 19 provided upstream or downstream of the 2 nd liquid contacting portion with respect to the conveying direction of the substrate FS, for applying a voltage to the 2 nd electrolytic plating liquid LQ1 in contact with the auxiliary pattern APTa. Thereby, the electrolytic plating of a different material can be performed for each specific pattern portion SPT in the conductive pattern PT.

In the above-described embodiment 2, the film of the 1 st noble metal (for example, gold) is formed on the entire conductive pattern PT by electrolytic plating, but the film of the 1 st noble metal may be formed by electroless plating. In this case, as shown in fig. 9, a resist layer 52 having a rectangular opening 52a including a region corresponding to the electrode portion E is formed on the conductive pattern PT of the substrate FS. Therefore, even when the substrate FS coated with the resist layer 52 is immersed in the electroless plating solution, the resist layer 52 serves as a mask, and a thin film of the 1 st noble metal can be formed on the region of the electrode portion E. Since the opening 52a of the resist layer 52 only needs to be opened at least in the region corresponding to the electrode portion E (for example, 2mm square), the patterning accuracy (positioning accuracy of exposure light) when exposing the resist layer 52 does not need to be precise. When the electrode portion E is completed on the substrate FS, a portion (portion of the pattern PTa) including the electrode portion E and the wirings LW, LC, and LR is cut out from the substrate FS and used as 1 sensor head. In this case, the cut-out wires LW, LC, LR of the sensor head are connected to the sensor circuit as shown in fig. 6. In order to develop the strength of the wires LW, LC, LR at the time of connection, the resist layer 52 may be subjected to exposure processing so that the regions corresponding to the ends of the wires LW, LC, LR connected to the auxiliary pattern APTa side have rectangular openings 52 b. Thereby, the strength of the portion of the wirings LW, LC, LR connected to other wirings or members, etc. can be enhanced (the thickness of plating is increased). As a method for forming a gold thin film as the 1 st noble metal by electroless plating, there are substitution type, reduction type, and the like. The resist layer 52 may be used for the electrolytic plating described in embodiment 2 and embodiment 1.

[ modifications of embodiment 1 and 2 ]

The above-described embodiments 1 and 2 may be modified as described below.

(modification 1) in the above-described embodiments 1 and 2, each pattern PTa of the conductive pattern PT is used by cutting out a sensor head including a pattern having a shape corresponding to 1 electrode portion E and the wiring connected to each electrode of the 1 electrode portion E after completion, but each pattern PTa (hereinafter referred to as PTa ') of the conductive pattern PT of modification 1 is used by cutting out a pattern having a shape corresponding to a plurality of (here, 4) electrode portions E and the wiring connected to each electrode of the electrode portions E after completion, assuming that the pattern PTa' includes 1 sensor head.

Fig. 10 is a diagram showing an example of the pattern PTa' in modification 1. The pattern PTa' has a pattern having a shape corresponding to 4 electrode portions E1 to E4 arranged adjacent to each other in a matrix, and wirings LW1 to LW4, LC1 to LC4, and LR1 to LR4 connected to the respective electrodes (the working electrodes WE1 to WE4, the counter electrodes CE1 to CE4, and the reference electrodes RE1 to RE4) of the 4 electrode portions E1 to E4. The pattern PTa' is formed using a conductive material.

By forming the pattern PTa' in this manner, the working electrodes WE1 to WE4, the counter electrodes CE1 to CE4, the reference electrodes RE1 to RE4, and the wirings LW1 to LW4, LC1 to LC4, and LR1 to LR4, which are connected to the electrodes of the 4 electrode portions E1 to E4, respectively, in the 4 electrode portions E1 to E4 adjacently arranged in a matrix can be selectively electrolytically plated with a predetermined metal material by the method shown in embodiment 1 or 2. Further, by configuring the 4 electrodes E1 to E4 as the electrode 60 of the sensor device, and applying different reagents (including different enzymes) to the respective electrodes E1 to E4 or attaching a test paper containing the reagents, it is possible to provide a sensor device (sensor head) capable of simultaneously performing tests corresponding to a plurality of test items other than measurement of the blood glucose concentration.

(modification 2) in the above-described embodiments 1 and 2, a thin film of a noble metal such as gold, platinum, or silver is formed on the conductive pattern PT by electrolytic plating, but the thin film is not limited to a noble metal, and may be another metal capable of being electrodeposited (plated) from a solution. As such metals that can be plated, there are Zn (zinc), Cr (chromium), Mn (manganese), Fe (iron), Co (cobalt), Ni (nickel), Cu (copper), Ge (germanium), Pd (palladium), In (indium), Sn (tin), Hg (mercury), Ti (titanium), and the like.

[ embodiment 3 ]

The electrode portion of the sensor device for measuring physical or chemical properties contained in the soil of a cultivated land or the like can be produced by the method described in embodiment 1 or 2. Fig. 11 is a schematic configuration diagram of a sensor device (strip sensor) 70 according to embodiment 3. The sensor device 70 includes a plurality of electrode portions 72 formed at a plurality of positions along the longitudinal direction on the substrate FS, a plurality of detection circuit portions 74 provided for each electrode portion 72, and an upper control device 76. The detection circuit unit 74 and the upper control device 76 are provided on the substrate FS. The detection unit DU is constituted by 1 electrode portion 72 and 1 detection circuit portion 74 provided corresponding to the 1 electrode portion 72. That is, the plurality of detection units DU are provided at a plurality of locations on the substrate FS spaced apart in the longitudinal direction. The length of the substrate FS of the sensor device 70 in the longitudinal direction is, for example, 30 to 100m, and the length in the short side direction is, for example, about 5 to 5 cm. The detection units DU (the electrode unit 72 and the detection circuit unit 74) are discretely provided on the substrate FS at intervals of, for example, 30cm to 5m in the longitudinal direction of the substrate FS.

The electrode portion 72 has an electrode pair (a pair of electrodes) that contacts the soil as the subject, and the detection circuit portion 74 detects an electrical change between the electrode pair (between the pair of electrodes). The host control device (information collection unit) 76 controls the plurality of detection circuit units 74, and collects detection signals (measurement values) detected by the plurality of detection circuit units 74. A conductive power line portion 80 for supplying a power voltage to each of the plurality of detection circuit portions 74 is formed on the substrate FS. The power line portion 80 extends continuously in the longitudinal direction from the upper control device 76 toward the end of the substrate (transmission member) FS. The host control device 76 applies a drive voltage to the power line portion 80. The power line section (power supply wiring, power path) 80 has a positive power supply line 80a to which a drive potential Vdd is applied by the upper control device 76, and a negative power supply line 80b to which a reference potential Vss (e.g., ground potential) is applied. A signal transmission line section (signal wiring, transmission path) 82 for performing communication between the plurality of detection circuit sections 74 and the upper control device 76 is formed on the substrate (transmission member) FS. The signal transmission line portion 82 extends continuously in the longitudinal direction from the upper control device 76 toward the end of the substrate FS. The signal transmission line section 82 transmits a detection signal detected by the detection circuit section 74 to the upper control device 76, and command information and the like from the upper control device 76 are transmitted to the respective detection circuit sections 74. In embodiment 3, since the upper control device 76 is provided on one end side of the substrate FS, the power line portion 80 and the signal transmission line portion 82 extend from the upper control device 76 toward the other end side of the substrate FS.

Fig. 12 shows a configuration of 1 detection unit DU (electrode portion 72 and detection circuit portion 74 provided corresponding to the electrode portion 72). The electrode part 72 has 1 or more electrode pairs to detect different physical or chemical characteristics of the soil. In embodiment 3, the electrode portion 72 has 2 electrode pairs 90 and 92, but the number of electrode pairs in the electrode portion 72 may be 1, or 3 or more. The electrode pair 90 composed of the pair of electrodes 90a and 90b is an electrode for detecting (measuring) the EC value (electric mobility, electric conductivity) of the soil. Therefore, the electrodes 90a and 90b are, for example, electrodes having surfaces plated with a noble metal such as gold or platinum. The electrode pair 92, which is composed of a pair of electrodes 92a and 92b, detects (measures) the pH (acidity) of the soil. Therefore, the surface of the electrode 92a is plated with zinc (Zn), and the surface of the electrode 92b is plated with a noble metal such as gold or platinum, or an electrode made of SUS (stainless steel). Further, at least one of the electrode pairs 90, 92 may be an electrode that detects a physical or chemical property other than EC or pH (e.g., water content of soil).

The detection circuit portion 74 having the microcomputer chip (control portion) 74a is connected to the power line portion 80. That is, the detection circuit section 74 is connected to the positive power supply line 80a and the negative power supply line 80 b. Thereby, the drive voltage (the potential difference obtained by subtracting the reference potential Vss from the drive potential Vdd) is applied to the detection circuit portion 74. One electrode 90a, 92a of the pair of electrodes 90, 92 is connected to the microcomputer chip 74a, and the other electrode 90b, 92b is connected to the negative power supply line 80 b. The electrodes 90a of the EC value detection electrode pair 90 are individually connected to the microcomputer chip 74a via the resistors Ra and Rb, respectively. Further, the electrodes 92a of the pH detection electrode pair 92 are connected to the microcomputer chip 74a via a resistor Rc.

The microcomputer chip 74a applies a potential to the electrode 90a of the electrode pair 90 via the resistance Ra, and detects a voltage drop corresponding to the resistance value between the electrode pair 90 (between the pair of electrodes 90a, 92 b) using the resistance Rb. The microcomputer chip 74a is constituted by a PIC (peripheral device-interface-controller) of a single-chip microcomputer with low power consumption, which incorporates an analog/digital conversion circuit (ADC) or a digital/analog conversion circuit (DAC), a serial interface circuit, a memory unit, and the like. The microcomputer chip 74a AD-converts a voltage (EC value) indicating the voltage drop detected by the resistor Rb, and outputs the voltage to the upper control device 76 via the serial signal transmission line 82. The microcomputer chip 74a detects an electromotive force generated in the electrode pair 92 (between the pair of electrodes 92a, 92) by using the resistance Rc. The microcomputer chip 74a AD-converts a voltage (pH value) indicating the electromotive force obtained by the detection, and outputs the voltage to the upper control device 76 through the signal transmission line section 82. The detection circuit unit 74 further includes a temperature sensor IC74b, and outputs a voltage corresponding to the temperature of the soil (or water in the soil), which is the subject detected (measured) by the temperature sensor IC74b, to the microcomputer chip 74 a. The microcomputer chip 74a AD-converts a voltage (temperature) corresponding to the temperature, and outputs the AD-converted voltage to the upper control device 76 through the signal transmission line 82. In this way, the environmental characteristics such as EC value, pH value, and temperature outputted from each of the plurality of detection circuit units 74 (microcomputer chips 74a) are collected by the host control device 76, and the environmental characteristics (such as soil state) of the soil in which the crop is grown can be grasped at one time. The host control device 76 may also transmit the collected environmental characteristics of the soil, such as EC value, pH value, and temperature, to an external control device (computer), not shown, by wireless communication.

The storage unit of the microcomputer chip 74a stores a program for measurement necessary for measuring each of the EC value, the pH value, and the temperature, a program for sequence specifying the sequence of the measurement operation, the number of times of measurement, and the like of each of the EC value, the pH value, and the temperature, a program for communication through the signal transmission line unit 82 to exchange data (digital values) of each of the EC value, the pH value, and the temperature collected with the upper control device 76. When each of the plurality of detection circuit units 74 (microcomputer chips 74a) simultaneously performs various measurement operations, the drive voltage supplied to the detection circuit unit 74 (microcomputer chip 74a) located at a position separated from the upper control device 76 may be reduced to a value equal to or less than the operable value. In this case, when the positive power supply line 80a and the negative power supply line 80b are thin copper foils formed on the substrate FS by vapor deposition, plating, or the like, the resistance value per unit length cannot be sufficiently small, and a voltage drop is caused by the wiring resistance. Therefore, it is preferable to form the positive power supply line 80a and the negative power supply line 80b in advance with wide (thick) widths within a possible range. The upper control device 76 may control the timing (interval) at which each of the plurality of detection circuit units 74 (microcomputer chips 74a) performs various measurements so as not to overlap, so that a large current does not flow into the power lines 80a and 80 b.

The strip sensor 70 shown in fig. 11 and 12 may be configured such that the electrode portion 72 of 1 detection unit DU is positioned near the seed or root of a plant planted in the soil of a cultivated land. Since the strip sensor 70 is buried in the soil for about half a year to 1 year, the portion other than the electrode portion 72 is covered with the insulating resin layer so as not to be corroded by moisture or the like in the soil. Further, zinc (Zn) of the electrode 92a shown in fig. 12, which detects (measures) the pH (acidity) of the soil, is gradually eluted by the water content of the soil, and therefore, it is preferable to extend the plating time to precipitate the zinc as thick as possible. When the electrode 92b is made of SUS (stainless steel), since deposition of plating cannot be performed on SUS, a sheet of SUS may be attached to an electrode portion of a copper foil using a conductive paste or an adhesive.

As shown in fig. 13, the following configuration may be adopted: an opening 102 for holding the seed 100 is provided in the vicinity of the electrode pair 90, 92 of each electrode portion 72 on the substrate FS of the sensor device (strip sensor) 70, and a film 104 for covering the opening 102 is attached to the front and back sides of the substrate FS. Thereby, the seeds 100 of the plant can be held in the closed space (storage tank) formed by the opening 102 and the film 104. The film 104 is preferably a cellulose film that allows water to pass therethrough, but may be a mesh fabric or water-soluble paper having a size smaller than that of the seed 100. By embedding the long film-shaped sensor device (belt-type sensor) 70 formed as described above into the soil of the cultivated land, the embedding of the sensor device 70 and the planting of the crop seeds 100 can be performed simultaneously, and the efficiency of the farming work can be improved. Further, with such a configuration, since the electrode pair 90, 92 is provided near the seed 100, the environmental characteristics (soil state) of the soil at the time of actually culturing the seed 100 can be accurately grasped. Therefore, the environmental characteristics of the soil can be continuously and accurately monitored during the period from germination to harvest.

Here, the plurality of detection circuit portions 74 provided corresponding to the respective electrode portions 72 are connected in parallel to the power line portion 80. For example, when a plurality of detection circuit portions 74 are provided at intervals of 30cm in the longitudinal direction with respect to a substrate FS having a length of 30m in the longitudinal direction, about 100 detection circuit portions 74 may be connected in parallel to the power line portion 80. Therefore, when all 100 detection circuit units 74 are set to the active state (the 1 st mode in which the normal operation is performed), sufficient electric power cannot be supplied to the detection circuit units 74 as the distance from the upper control device 76 to the front end side of the substrate FS, that is, as the distance from the upper control device 76. Therefore, in the present embodiment 3, in principle, all the detection circuit units 74 are put into the sleep state (2 nd mode in which the function is suspended), only 1 detection circuit unit 74 is put into the active state (wake-up state) at a predetermined timing, and the detection circuit units 74 put into the active state are sequentially switched. Therefore, the microcomputer chip 74a described above with reference to fig. 12 has a function (mode switching unit) for switching between an active state (1 st mode in which normal operation is performed) and a sleep state (2 nd mode in which the function is suspended) in response to an external signal.

As shown in fig. 12, each of the plurality of detection circuit units 74 including the mode switching unit is connected to the detection circuit units 74 located at the front and rear sides via a signal line 110. Here, the upper control device 76 is referred to as the front side and the opposite side to the upper control device 76 is referred to as the rear side, and in fig. 12, for convenience, the signal line 110 connected to the detection circuit section 74 at the front stage is referred to as 110a, and the signal line 110 connected to the detection circuit section 74 at the rear stage is referred to as 110 b. Since the detection circuit portion 74 is not provided in front of the most preceding detection circuit portion 74, the signal line 110a of the most preceding detection circuit portion 74 is connected to the upper control device 76. Since the detection circuit 74 is not provided behind the last detection circuit 74, the signal line 110b is not provided in the last detection circuit 74.

The detection circuit unit 74 at the front stage enters an active state when receiving the active signal ACS transmitted from the mode switching unit provided in the upper control device 76 via the signal line 110a, and outputs a reply signal ANS indicating the content of the active state to the upper control device 76 via the signal line 110 a. When the first detection circuit unit 74 is in the active state, the state of the soil (EC value, pH value, temperature, etc.) is measured, and when the measurement of the soil state and the transmission of the measured data to the upper control device 76 are completed, the activity signal ACS is output to the second (next) detection circuit unit 74 via the signal line 110 b. Then, when the detection circuit section 74 at the front stage receives the return signal ANS from the detection circuit section 74 at the rear stage via the signal line 110b, the state is changed to the sleep state. By repeating such an operation, the 1 detection circuit unit 74 in the active state can be sequentially switched from the detection circuit unit 74 at the front stage to the detection circuit unit 74 at the last stage. Since the detection circuit unit 74 in the sleep state consumes a small amount of power, necessary power can be reliably supplied to the detection circuit unit 74 that is in the active state. When a predetermined cycle timing or a predetermined condition is satisfied, the host control device 76 outputs an active signal ACS to the first-stage detection circuit unit 74.

The electrode portion 72 (electrode pair 90, 92) of the sensor device 70 having the above-described configuration can be manufactured using the plating apparatuses 10, 10a described in embodiment 1 or 2. In this case, conductive patterns PT corresponding to the shapes of the power supply line portion 80, the signal transmission line portion 82, the terminal pads for connecting the terminals of the microcomputer chip 74a, the terminal pads for connecting the terminals of the temperature sensor IC74b, the electrode pairs 90, 92 of the electrode portion 72, and the like are formed on the substrate FS. In the conductive pattern PT, a plurality of specific pattern portions SPT are formed by pattern portions corresponding to the respective electrodes 90a, 90b, 92a, 92b of the electrode pairs 90, 92. A plurality of auxiliary patterns APT connected to the plurality of specific pattern portions SPT, respectively, or an auxiliary pattern APTa connected to all of the specific pattern portions SPT is formed on the substrate FS. Therefore, thin films of different metals (e.g., noble metals) can be formed on the surfaces of the electrodes 90a, 90b, 92a, and 92 b. After the electrode pairs 90, 92 are formed, the microcomputer chip 74a, the temperature sensor IC74b, and the upper control device 76 are mounted on the board FS by low-temperature solder paste or the like, whereby the sensor device 70 can be manufactured. The material of the thin film formed on the electrode surface of the electrode portion 72 may be selected to be optimal depending on the detection target. The electrodes 90a, 90b, 92a, and 92b may be formed by attaching a tape (conductive) having a thin film of a metal (e.g., noble metal or SUS) formed on the surface thereof, without forming the electrodes 90a, 90b, 92a, and 92b by electrolytic plating.

In embodiment 3, the sensor device 70 detects (measures) environmental characteristics (physical or chemical characteristics contained in soil or the like) of soil in a cultivated land in which plants are cultivated, but may also be used to detect environmental characteristics (physical or chemical characteristics such as fresh water or seawater, for example) of a farm in which aquatic products such as fish or animals are cultivated (cultivated). In embodiment 3, the number of detection units DU that are in the active state (detection circuit units 74) is 1, and the detection units DU that are in the active state are sequentially switched, but the number of detection units DU that are in the active state may be plural (but less than the total number of detection circuit units 74), and the detection units DU that are in the active state may be sequentially switched. This makes it possible to quickly collect the environmental characteristics from all the detection units DU.

In this way, the sensor device 70 according to embodiment 3 measures physical or scientific environmental characteristics of a cultivated land on which plants are cultivated or a farm in which animals or aquatic products are cultivated. The sensor device 70 further includes: a long substrate FS as a transmission member which can be installed in a farm or a farm and includes a signal transmission line portion 82 formed from one end side to the other end side and a power supply line portion 80 through which electric power flows; a plurality of detection units DU which are provided at each of a plurality of locations separated from the longitudinal direction of the substrate FS, connected in parallel to the power line unit 80, detect environmental characteristics of a cultivated land or a farm, and output the environmental characteristics to the signal transmission line unit 82; and a host control device 76 that collects environmental characteristics output from the plurality of detection units DU via the signal transmission line unit 82. When the upper control device 76 collects the environmental characteristics, a predetermined number of the detection units DU of the plurality of detection units DU are in the active state, the environmental characteristics are detected, and the detection unit DU whose detection of the environmental characteristics has been completed switches the other detection units DU of the plurality of detection units DU, which have not been in the active state, from the sleep state to the active state. With this configuration, the average power consumption of the sensor device 70 (strip-shaped sensor sheet) is kept low regardless of whether or not a plurality of detection units DU are mounted, and the amount of current flowing from the host control device 76 to the power supply line portion 80 is reduced on average, so that the line width or thickness of the metal material (copper foil or the like) constituting the wiring pattern of the power supply line portion 80 can be reduced, and the flexibility of the sensor device 70 (strip-shaped sensor sheet) can be improved.

[ 4 th embodiment ]

FIG. 14 is a schematic configuration diagram showing a schematic configuration of a plating apparatus according to embodiment 4. In the present embodiment, the electrolytic plating of 2 kinds of metal materials can be continuously performed through the auxiliary patterns APT1 and APT2 on both sides of the substrate FS shown in fig. 2. In fig. 14, each of the 1 st plating apparatus 10A and the 2 nd plating apparatus 10B includes an electrode roll 18c, a treatment tank 16, an electrode plate 18B, a cleaning tank 20, a drying section 22, and the like, which are basically similar to the plating apparatus 10 of fig. 1. However, the electrolytic plating solution stored in the treatment tank 16 of the 1 st plating apparatus 10A and the electrolytic plating solution stored in the treatment tank 16 of the 2 nd plating apparatus 10A are different solutions, and for example, in the 1 st plating apparatus 10A, gold (Au) is electrolytically plated on a predetermined portion of the conductive pattern PT on the substrate FS, and in the 2 nd plating apparatus 10B, for example, a noble metal (platinum or the like) other than gold is electrolytically plated on a predetermined portion of the conductive pattern PT.

In the plating apparatus 10 of fig. 1, as an example, the negative electrode side of the power supply unit 18a is connected to the electrode member 19 (fig. 3 and 4) of the electrode roll 18c, the positive electrode side of the power supply unit 18a is connected to the electrode plate 18b of the electrolytic plating solution LQ1 immersed in the treatment bath 16, and the negative electrode side is grounded. In the embodiment of fig. 14, the dc voltage output from the power supply unit (hereinafter, referred to as "1 st power supply unit") 18a for the 1 st plating apparatus 10A and the dc voltage output from the power supply unit (hereinafter, referred to as "2 nd power supply unit") 18a for the 2 nd plating apparatus 10B are power supplies in a floating state so as not to have a common potential (e.g., ground potential). Here, the electrode member 19 provided to the electrode roller 18c of the 1 st plating apparatus 10A and in contact with the auxiliary pattern APT1 on one side of the substrate FS is denoted by 19A, and the electrode member 19 provided to the electrode roller 18c of the 2 nd plating apparatus 10A and in contact with the auxiliary pattern APT2 on the other side of the substrate FS is denoted by 19B.

With this configuration, when the substrate FS is conveyed at a constant speed and the current is supplied from the 1 st power supply unit 18a, electrons flow in the electrolytic plating solution stored in the treatment tank 16 of the 1 st plating apparatus 10A in a direction from the auxiliary pattern APT1 and the conductive pattern portion connected to the auxiliary pattern APT1 toward the electrode plate 18b via the electrode member 19A, and a plating treatment (for example, gold plating) is performed. The substrate FS subjected to the plating treatment by the 1 st plating apparatus 10A is carried into the next 2 nd plating apparatus 10B in a dry state. When the power is applied from the 2 nd power supply unit 18a while the substrate FS is being conveyed at a constant speed in the 2 nd plating apparatus 10B, electrons flow in the electrolytic plating solution stored in the treatment bath 16 of the 2 nd plating apparatus 10B in a direction from the auxiliary pattern APT2 and the conductive pattern portion connected to the auxiliary pattern APT2 toward the electrode plate 18B via the electrode member 19B, and a plating treatment (for example, platinum plating) is performed.

At this time, although the potential on the negative side of the 2 nd power supply unit 18a is applied to the auxiliary pattern APT2 passing through the substrate FS in the treatment bath 16 of the 1 st plating apparatus 10A, the positive and negative sides of the 1 st power supply unit 18a and the positive and negative sides of the 2 nd power supply unit 18a are in a floating state of being not electrically connected to each other, and therefore, no current flows into the auxiliary pattern APT2 from the electrolytic plating solution in the treatment bath 16 of the 1 st plating apparatus 10A, and therefore, the auxiliary pattern APT2 and the conductive pattern portion connected to the auxiliary pattern APT2 are not subjected to the plating treatment in the 1 st plating apparatus 10A. Similarly, although the potential on the negative side of the 1 st power supply unit 18a is applied to the auxiliary pattern APT1 passing through the substrate FS in the treatment bath 16 of the 2 nd plating apparatus 10B, the 1 st power supply unit 18a and the 2 nd power supply unit 18a are in a floating state, and therefore, no current flows into the auxiliary pattern APT1 from the electrolytic plating solution in the treatment bath 16 of the 2 nd plating apparatus 10B, and therefore, the plating process is not performed on the auxiliary pattern APT1 and the conductive pattern portion connected to the auxiliary pattern APT1 (the pattern portion previously plated by the 1 st plating apparatus 10A) in the 2 nd plating apparatus 10B. In order to maintain the floating relationship between the 1 st power supply unit 18a and the 2 nd power supply unit 18a, the treatment bath 16 preferably stores an electrolytic plating solution using an insulating material (acrylic resin, polycarbonate resin, ceramics, or the like).

However, in a state where there is a relatively large difference (for example, several volts or more) between the potential between the positive electrode and the negative electrode of the 1 st power supply unit 18a and the potential between the positive electrode and the negative electrode of the 2 nd power supply unit 18a, or in a state where a potential difference suitable for plating is generated between the auxiliary pattern APT1 connected to the electrode member 19A (and the conductive pattern portion connected to the auxiliary pattern APT1) and the auxiliary pattern APT2 connected to the electrode member 19B (and the conductive pattern portion connected thereto), the plating process may be performed on the conductive pattern portion connected to all of the auxiliary pattern APT1 and the auxiliary pattern APT2 in the 1 st plating apparatus 10A. In the case of the present embodiment, in the 1 st plating apparatus 10A, gold plating is performed on both the auxiliary patterns APT1 and APT2 and all the conductive pattern portions (wiring portions or electrode portions) connected to the auxiliary patterns APT1 and APT 2. Then, in the next 2 nd plating apparatus 10B, a plating layer made of another metal (for example, platinum) is deposited on the conductive pattern portion (the pattern portion which has been previously plated with gold by the 1 st plating apparatus 10A) connected to the auxiliary pattern APT2 in accordance with the potential difference (the direction of polarity) between the auxiliary pattern APT1 and the auxiliary pattern APT2 in the electrolytic plating solution passing through the processing bath 16 of the 2 nd plating apparatus 10B.

As described above, even when the sheet-shaped long substrate FS is continuously subjected to the plating treatment by the 1 st plating apparatus 10A and the 2 nd plating apparatus 10B, the voltages for plating applied to the electrolytic plating solution are independent (floating) of each other in the 1 st plating apparatus 10A and the 2 nd plating apparatus 10B, and thus the auxiliary patterns APT1 and APT2 are not intermittently provided at intervals of a fixed length in the longitudinal direction of the substrate FS, whereby the selective plating treatment of different metal types can be performed for each electrode.

As shown in fig. 2, although electrolytic plating of at least 2 metal species can be realized by providing auxiliary patterns APT1 and APT2 made of a conductive material on both sides in the width direction (Y direction) of the substrate FS, more auxiliary patterns must be provided when electrolytic plating is selectively performed with 3 or more metal species. Fig. 15 shows an example of a case where the 3 rd auxiliary pattern APT3 is provided in addition to the 2 auxiliary patterns APT1 and APT2 shown in fig. 2, and here, each of the 3 counter electrodes CE, the working electrode WE, and the reference electrode RE constituting the electrode portion E is electrolytically plated with a different metal species. Therefore, the counter electrode CE is connected to the auxiliary pattern APT1 through the wiring pattern APTs, the working electrode WE is connected to the auxiliary pattern APT2 through the wiring pattern APTs, and the reference electrode RE is connected to the auxiliary pattern APT3 through the wiring pattern APTs. As shown in fig. 15, 2 auxiliary patterns APT2 and APT3 are provided in parallel with each other in the longitudinal direction on one side in the width direction (+ Y direction side) of the substrate FS at regular intervals in the Y direction. In fig. 15, since the auxiliary pattern APT3 is disposed inside the auxiliary pattern APT2 (on the center side of the substrate FS on which the electrode portion E is formed), the wiring patterns APTs connected to the auxiliary pattern APT2 (extending in the Y direction) are in a state of being directly short-circuited to the auxiliary pattern APT 3.

Therefore, when the conductive pattern PT (for example, copper foil) is formed, the patterns from the auxiliary patterns APT1 and APT2 to the counter electrode CE and the working electrode WE connected to the auxiliary patterns APT1 and APT2 are formed as the layer 1 pattern on the substrate FS, and then the insulating layer ISO for preventing short circuit is formed in the region that can intersect with the auxiliary pattern APT3 on the wiring pattern extending from the auxiliary pattern APT2 in the Y direction. Fig. 15 shows a case where the insulating layer ISO is partially formed in the intersection region, but may be continuously formed in the longitudinal direction along the region where the auxiliary pattern APT3 is formed. After the insulating layer ISO is formed, patterns up to the auxiliary pattern APT3 and the reference electrode RE connected to the auxiliary pattern APT3 are formed as the layer 2 pattern. A part or all of the auxiliary pattern APT3 is formed on the insulating layer ISO.

As another method of forming the conductive pattern PT, a cut-off portion Np partially cutting the auxiliary pattern APT3 is provided in a region where the wiring pattern APTs extending from the auxiliary pattern APT2 in the Y direction may intersect with the auxiliary pattern APT3, and the auxiliary pattern APT3 including the cut-off portion Np and all the auxiliary patterns APT1, APT2 and the conductive patterns PT (electrodes CE, WE, RE, etc.) are formed together by etching of the copper foil, etc. Thereafter, the insulating layer ISO may be selectively coated on the removed portion Np by a droplet of an ink jet method or the like and hardened, and then the removed portion Np of the auxiliary pattern APT3 may be connected by an ink or the like containing nano metal particles, so that the insulating layer ISO is coated and dried.

Each of the 3 auxiliary patterns APT1 to APT3 formed on the substrate FS in this manner is in contact with the annular electrode members 19A, 19B, and 19C formed on the electrode roller 18C, and is supplied with a voltage for electrolytic plating. In fig. 15, the electrode members 19A, 19B, and 19C are provided in the 1 electrode roll 18C corresponding to the Y-direction positions of the auxiliary patterns APT1 to APT3, but as described above with reference to fig. 3 and 4, in the 1 plating apparatus 10, any one of the electrode members 19A, 19B, and 19C may be connected to one polarity of the voltage from the power supply unit, or as described above with reference to fig. 14, one polarity of the voltage from the power supply unit may be connected to each of the electrode members 19A, 19B, and 19C in a floating state.

[ embodiment 5 ]

FIG. 16 is a schematic configuration diagram showing a schematic configuration of a plating apparatus according to embodiment 5. In the present embodiment, the treatment bath 16A for storing the electrolytic plating solution in the plating apparatus has a flat and shallow shape along the XY plane, and the 2 guide rollers R4 'and R5' provided in the treatment bath 16A are supported by the bearing portion 16C and the like so that only the lower end portions thereof are immersed in the electrolytic plating solution LQ1 stored shallowly on the bottom surface of the treatment bath 16A. The 2 guide rollers R4 'and R5' parallel to each other are disposed at a constant interval in the X direction (longitudinal direction), and the substrate FS supported by the lower ends of the 2 guide rollers R4 'and R5' is stretched in the X direction with a predetermined tension between the guide rollers R4 'and R5'. An electrode plate 18b is provided on the bottom surface of the processing bath 16A, and the substrate FS is disposed so that the surface to be subjected to the plating treatment faces the electrode plate 18b side. The plating surface (the surface on the-Z direction side in fig. 16) of the substrate FS is held in the electrolytic plating solution LQ1 with a certain interval from the electrode plate 18 b.

The + Y direction side of the bottom surface of the processing bath 16A is an upward slope 16B, and an end FSe in the Y direction (width direction) of the substrate FS is pulled along the slope 16B and held by nip-type guide rollers R20 and R21 so as not to contact the electrolytic plating solution LQ 1. The nip guide rollers R20 and R21 are provided in plural at predetermined intervals in the X direction. The auxiliary pattern APTa shown in fig. 7, or the auxiliary patterns APT2 and APT3 shown in fig. 15 are formed continuously in the X direction at the end FSe of the substrate FS.

With the above configuration, the substrate FS is conveyed in the X direction without the auxiliary pattern APTa of the end FSe, or the auxiliary patterns APT2 and APT3 coming into contact with the electrolytic plating solution LQ1, and the plating process on the auxiliary pattern APTa, or the auxiliary patterns APT2 and APT3 can be prevented. In order to ensure stability of the current supply for the electrolytic plating, the auxiliary pattern APTa, or the auxiliary patterns APT2, APT3 are formed in a relatively wide width. The auxiliary pattern APTa, or the auxiliary patterns APT2, APT3 are formed continuously in the X direction, and therefore the entire length thereof is equal to the entire length of the substrate FS wound around the supply roller FR 1. Therefore, if the entire substrate FS is immersed in the electrolytic plating solution LQ1, the amount of plating deposition with respect to the auxiliary pattern APTa or the auxiliary patterns APT2 and APT3 may be relatively large with respect to the amount of plating deposition with respect to the conductive pattern portion (counter electrode CE, working electrode WE, reference electrode RE, etc.) to be subjected to the plating treatment. That is, a large amount of plating deposition occurs in a portion where the plating process is not originally required, and the consumption of the electrolytic plating solution LQ1 or the electrode plate 18b is accelerated.

Therefore, as shown in fig. 16, when the substrate FS is conveyed so that the auxiliary pattern APTa formed at the end FSe of the substrate FS or the portions of the auxiliary patterns APT2 and APT3 do not contact the electrolytic plating solution LQ1, it is possible to prevent plating of unnecessary portions such as the auxiliary pattern and to suppress consumption of the electrolytic plating solution LQ1 or the electrode plate 18 b. Further, as shown in fig. 16, the treatment bath 16A configured to convey the substrate FS substantially horizontally between the 2 guide rollers R4 'and R5' also has an advantage that the amount of the electrolytic plating liquid LQ1 used can be reduced, and the concentration control and temperature control of the electrolytic plating liquid LQ1 can be easily performed. In the configuration of fig. 16, even in the processing bath 16A, since the end FSe of the substrate FS is kept in the air and is in a dry state, a part of the nip-type guide rollers R20 and R21 may be directly brought into contact with the auxiliary pattern APTa or the auxiliary patterns APT2 and APT3 as the current collecting roller Eb shown in fig. 5B.

[ embodiment 6 ]

FIG. 17 is a schematic configuration diagram showing a schematic configuration of a plating apparatus according to embodiment 6. In the present embodiment, the plating treatment is performed by immersing the drum DR in the electrolytic plating solution LQ1 in the treatment tank 16B while winding and conveying the substrate FS fed in the longitudinal direction around the cylindrical outer peripheral surface of the drum DR. The bowl DR has an outer peripheral surface having a constant radius from a rotation center axis AXo extending in the Y direction, and is made of a material (non-conductive material) that is not corroded by the electrolytic plating solution LQ1 and is not plated out. The drum DR is preferably an insulating material. The inner wall of the bottom of the processing bath 16B in the present embodiment is formed in a cylindrical surface shape like a recess maintaining a constant gap with the outer peripheral surface (substrate FS) of the drum DR. The gap may be set to a value of several mm to ten mm. An electrode roller 18c that comes into contact with the auxiliary pattern on the substrate FS is provided above the drum DR on the carrying-in side of the substrate FS (before coming into contact with the electrolytic plating solution LQ 1). The electrode roller 18c is the same as the electrode roller 18c shown in fig. 3, 4, 15, and the like. Further, a guide roller R22 for changing the conveyance direction of the substrate FS is provided on the carrying-out side of the substrate FS above the drum DR. In the case of the present embodiment, the surface of the substrate FS subjected to the plating treatment is opposite to the surface in contact with the drum DR.

A plurality of rod-shaped electrode rods 18B1, 18B2, 18B3, … 18B7, 18B8, … 18B15, 18B16, and 18B17 (hereinafter, collectively referred to as 18bn) that function similarly to the electrode plate 18B are provided on the inner wall surface of the treatment tank 16B at a position lower than the liquid surface of the electrolytic plating solution LQ1 so as to contact the electrolytic plating solution LQ 1. In fig. 17, 17 electrode rods 18bn are arranged at predetermined intervals in the circumferential direction of the recessed cylindrical inner wall surface. The dimension of each electrode rod 18bn in the Y direction is set so as to correspond to the width of the substrate FS (dimension in the Y direction). A potential of one polarity from the power supply unit 18a is applied to each of the 17 electrode rods 18 bn. However, the applied potential (voltage between the electrode member 19 of the electrode roller 18c and the electrode rod 18bn) may be different depending on the position of the electrode rod 18bn in the circumferential direction (position along the conveying direction of the substrate FS). For example, the potential applied to the first half of the electrode rods 18b1, 18b2, 18b3, and … 18b7 may be set to be slightly lower and the potential applied to the second half of the electrode rods 18b8, … 18b15, 18b16, and 18b17 may be set to be slightly higher during the period in which the substrate FS passes through the electrolytic plating solution LQ1 along the outer peripheral surface of the bowl DR. As described above, by changing the plating voltage applied to the electrolytic plating solution LQ1 from a low state to a high state as the substrate FS advances in the electrolytic plating solution LQ1, the plating layer deposited on the surface of the conductive pattern on the substrate FS can be made dense, and the plating time can be shortened or the plating layer can be made thick.

In the present embodiment, when the time (plating time) for bringing the substrate FS into contact with the electrolytic plating solution LQ1 is TL, the transport speed of the substrate FS is Vf, the diameter of the drum DR is Φ, the interface position at which the substrate FS and the electrolytic plating solution LQ1 start to come into contact is Lxa, the interface position at which the substrate FS is taken out from the electrolytic plating solution LQ1 is Lxb, and the contact angle formed by a line segment connecting the interface position Lxa and the center axis AXo and a line segment connecting the interface position Lxb and the center axis AXo is θ L, the following relationship is obtained.

TL＝π·φ·(θL/360°)/Vf

Thus, when the diameter φ of the drum DR is determined, the plating time TL can be effectively adjusted by changing the conveyance speed Vf, and the liquid contact angle θ L, that is, the liquid amount of the electrolytic plating liquid LQ1 (the height position of the interface positions Lxa, Lxb) can be changed.

As described above, according to the present embodiment, since the inner wall of the processing bath 16B is formed in a cylindrical surface shape with a substantially constant gap from the outer peripheral surface of the drum DR, the volume of the electrolytic plating liquid LQ1 filling the gap is much smaller than the liquid volume in the case of the processing bath 16 shown in fig. 1. Therefore, the concentration control and the temperature control of the electrolytic plating liquid LQ1 are easily performed, and the work of circulating or replacing the electrolytic plating liquid LQ1 for renewal is also completed in a short time. Further, in the present embodiment, since the gap between the side wall portion (parallel to the XZ plane) of the inner wall of the processing bath 16B, which is opposed to the Y-direction end surface (parallel to the XZ plane) of the drum DR, and the end surface of the drum DR can be made considerably small, the amount of the electrolytic plating solution LQ1 stored in the processing bath 16B can be further reduced.

[ embodiment 7 ]

Fig. 18 is a schematic configuration of the plating apparatus according to embodiment 7, and the upper stage is a plan view of the plating apparatus viewed in the XY plane, and the lower stage is a front view of the plating apparatus viewed in the XZ plane. In the present embodiment, as in embodiment 2 described above with reference to fig. 7 and 8, a part of the conductive pattern electrically connected to the specific pattern portion formed on the substrate FS is cut by the cutting unit 50 or the like, thereby preventing plating of the specific pattern portion. Therefore, the plating apparatus shown in fig. 18 is basically configured in the same manner as in fig. 8. Therefore, detailed description of the members having the same functions as those of the members in fig. 8 among the members in fig. 18 will be omitted.

The 1 st auxiliary pattern APT1 and the 2 nd auxiliary pattern APT2 described in fig. 2 or 14 above are formed in parallel in the longitudinal direction in the central portion in the width direction (Y direction) of the substrate FS processed by the plating apparatus of fig. 18. In the present embodiment, the metal (conductive material) finally plated on the surface of the 1 st specific pattern portion formed on the + Y direction side with respect to the 1 st auxiliary pattern APT1 on the substrate FS is different from the metal (conductive material) finally plated on the surface of the 2 nd specific pattern portion formed on the-Y direction side with respect to the 2 nd auxiliary pattern APT 2. The plating apparatus of fig. 18 is configured as follows: the surface of the 1 st specific pattern portion (copper foil) formed in the half area on the + Y direction side of the substrate FS and the surface of the 2 nd specific pattern portion (copper foil) formed in the half area on the-Y direction side of the substrate FS are subjected to plating with the 1 st metal in advance through the 1 st auxiliary pattern APT1 and the 2 nd auxiliary pattern APT2, and the substrate FS subjected to plating is carried in and plating with the 2 nd metal different from the 1 st metal is performed only on the surface of the 2 nd specific pattern portion (plating layer made of the 1 st metal).

In the present embodiment, the electrode roller 18c that contacts the surface of the substrate FS on which the auxiliary patterns APT1 and APT2 or the specific pattern portion is formed is provided with the annular electrode member 19 at the center portion in the Y direction, and the back surface side of the substrate FS is provided with the idle roller 18e that presses the auxiliary patterns APT1 and APT2 so as to be in close contact with the electrode member 19 of the electrode roller 18 c. A cutting unit 50 for cutting a part of the 1 st auxiliary pattern APT1 on the substrate FS is provided upstream of the electrode roller 18c with respect to the moving direction of the substrate FS. The cutting unit 50 is a mechanical punch or a laser punch for forming a through hole HW in the substrate FS in the present embodiment. The through hole HW is formed in a circular shape (or rectangular shape) having a size larger than the line width of the 1 st auxiliary pattern APT1 in the Y direction. The cutting unit 50 is provided with an image pickup device (CCD or CMOS) for enlarging and capturing a partial region on the substrate FS including the 1 st auxiliary pattern APT1 (or the 2 nd auxiliary pattern APT2), and is provided so as to be linearly movable in the width direction (Y direction) of the substrate FS along a guide rail (linear guide member) extending in the Y direction. Further, a servo drive mechanism may be provided which adjusts the position of the cutting unit 50 in the Y direction so that the image of the 1 st auxiliary pattern APT1 (or the 2 nd auxiliary pattern APT2) photographed by the image pickup device becomes a predetermined position in the Y direction within the photographing field of view. By providing such a servo drive mechanism, even if the substrate FS meanders greatly in the width direction (Y direction) while moving in the longitudinal direction, the cutting unit 50 can be positioned while following the change in position in the Y direction, and therefore the positional relationship between the through hole WH and the 1 st auxiliary pattern APT1 in the Y direction can be accurately set at all times. Therefore, the line width of the 1 st auxiliary pattern APT1 in the Y direction is set to several mm or less, for example, about 1mm, and the dimension of the through hole WH in the Y direction is set to about 2mm which is small. The formation of the through-hole WH by the cutting unit 50 is performed when the substrate FS is moved in the longitudinal direction by a fixed distance Lxp, and a dust collecting unit 50a that collects chips, gas, and the like generated when the through-hole WH is formed is provided on the back surface side of the substrate FS.

In the present embodiment, the substrate FS passing through the cutting section 50 is immersed in the 2 nd electrolytic plating solution LQ1 for the 2 nd metal plating stored in the processing bath 16 by the guide roller R2, the electrode roller 18c, and the guide roller R3 in this order, similarly to the configuration of fig. 8. At this time, when the longitudinal position on the substrate FS where the annular electrode member 19 of the electrode roller 18c contacts the 1 st auxiliary pattern APT1 (or the 2 nd auxiliary pattern APT2) is Pca and the longitudinal position on the substrate FS where the substrate FS starts to be immersed in the electrolytic plating solution LQ1 is Pcb, the distance Lxs between the position Pca and the position Pcb in the longitudinal direction of the substrate FS is set to be longer than the longitudinal separation distance Lxp of the through hole HW. In other words, since the distance Lxs between the position Pca and the position Pcb is determined by the configuration of the plating apparatus, the cutting unit 50 is controlled so as to form the through hole HW every time the substrate FS moves in the longitudinal direction by a distance Lxp shorter than the distance Lxs. In this way, if the distance Lxp and the distance Lxs are in the relationship of Lxs > Lxp, 1 or more through holes HW (cut portions of the 1 st auxiliary pattern APT1) are always present between the position Pca and the position Pcb on the substrate FS, and the voltage is not supplied to the 1 st specific pattern portion through the 1 st auxiliary pattern APT1 in the 2 nd electrolytic plating liquid LQ 1. On the other hand, since the voltage is supplied from the 2 nd auxiliary pattern APT2 that comes into contact with the annular electrode member 19 of the electrode roller 18c to the 2 nd specific pattern part immersed in the 2 nd electrolytic plating solution LQ1, a plating layer made of the 2 nd metal is generated on the surface of the 2 nd specific pattern part (plating layer made of the 1 st metal).

As described above, in the present embodiment, as shown in embodiment 2 above, it is not necessary to cut the wiring pattern portion connecting each of the plurality of specific patterns to the auxiliary pattern APT1 or APT2, and only 1 auxiliary pattern APT1 linearly extending in the longitudinal direction of the substrate FS is required to be cut (punched) at the predetermined pitch distance Lxp, and therefore, the configuration of the cutting section 50 is extremely simple, and the apparatus cost can be reduced. Further, since at least 1 through hole HW is formed in the distance Lxs, the total number of through holes HW can be reduced, and deformation of the substrate FS can be suppressed by reducing the internal stress generated in the substrate FS. The same applies to embodiment 2 of fig. 2 as above, as well as to the manner in which the auxiliary pattern APT1 (or the auxiliary pattern APT2) extending linearly in the longitudinal direction of the substrate FS is cut at a predetermined interval distance Lxp as in the present embodiment. In the present embodiment, as shown in fig. 18, the electrode roller 18c (and the electrode member 19) is disposed so as to contact the auxiliary pattern APT1 (or the auxiliary pattern APT2) of the substrate FS in the atmosphere on the upstream side of the processing tank 16 as the liquid contact part for storing the electrolytic plating liquid LQ1 in the transport direction of the substrate FS, but may be disposed so as to contact the auxiliary pattern APT1 (or the auxiliary pattern APT2) in the atmosphere on the downstream side of the processing tank 16. As shown in fig. 18, when the electrode roll 18c (and the electrode member 19) is located on the upstream side of the processing bath 16 (the electrolytic plating solution LQ1), the cutting section 50 may be disposed between the electrode roll 18c (and the electrode member 19) and the processing bath 16. When the electrode roll 18c (and the electrode member 19) is disposed on the downstream side of the processing bath 16 (the electrolytic plating solution LQ1), the cutting unit 50 is disposed between the electrode roll 18c (and the electrode member 19) and the processing bath 16.

Claims (12)

1. A sensor device which is buried in soil in a cultivated land and measures physical or chemical characteristics, which are environmental characteristics of the soil, the sensor device comprising:

an electrode unit having a pair of electrodes formed at a plurality of discrete positions along a longitudinal direction of a flexible, long sheet substrate and contactable with the soil;

a detection circuit unit provided for each of the electrode units and detecting a change in electrical characteristics between the pair of electrodes of the electrode unit;

a conductive power line portion formed continuously in the longitudinal direction on the sheet substrate so as to supply a power voltage to each of the detection circuit portions;

a conductive signal transmission line portion formed continuously in the longitudinal direction on the sheet substrate for transmitting the detection signal detected by each of the detection circuit portions; and

and a storage tank provided with closed spaces formed by a film through which moisture passes, at discrete positions along the longitudinal direction of the sheet substrate, and configured to hold seeds planted in the cultivated land in each of the closed spaces.

2. The sensor device of claim 1, wherein

The film is composed of any one of a cellulose film, a cloth having a mesh finer than the size of the seed, and a water-soluble paper.

3. The sensor device of claim 2, wherein

The detection circuit unit detects any one of acidity, water content, and conductivity of the soil with which the electrodes come into contact, based on a change in electrical characteristics between the pair of electrodes.

4. The sensor device of any one of claims 1 to 3, wherein

Each of the detection circuit sections provided at each of discrete positions along the longitudinal direction of the sheet substrate includes a temperature sensor,

measuring a temperature change in the soil in which the seed is buried.

5. The sensor device of claim 4, wherein

The detection circuit portion includes a low power consumption single chip microcomputer incorporating an analog/digital conversion circuit or a digital/analog conversion circuit, a serial interface circuit, and a storage portion.

6. A sensor device for continuously monitoring a physical or chemical characteristic, which is a characteristic of the soil environment surrounding plant seeds planted at discrete intervals in the soil of a cultivated land, comprising:

a plurality of detection circuit units provided at each of a plurality of discrete positions along a longitudinal direction of a flexible, long sheet substrate, and outputting measurement data corresponding to an electrical change between a pair of electrodes in contact with the soil or measurement data corresponding to a temperature change of the soil;

a power line portion which is formed continuously in the longitudinal direction on the sheet substrate and supplies a power supply voltage to each of the plurality of detection circuit portions;

a signal transmission line section formed on the sheet substrate along the longitudinal direction and transmitting the measurement data from each of the plurality of detection circuit sections;

and a plurality of storage grooves provided on the sheet substrate in the vicinity of each of the plurality of detection circuits, for holding the seeds in a closed space formed by a thin film through which moisture passes.

7. The sensor device of claim 6, wherein

The film is composed of any one of a cellulose film, a cloth having a mesh finer than the size of the seed, and a water-soluble paper.

8. The sensor device of claim 7, wherein

Each of the plurality of detection circuit units outputs measurement data corresponding to any one of acidity, water content, and conductivity of the soil in contact with the electrodes, based on a change in electrical characteristics between the pair of electrodes.

9. The sensor device of claim 8, wherein

Each of the plurality of detection circuit units includes an analog/digital conversion circuit (ADC), a serial interface circuit, and a microcomputer having a built-in memory unit.

10. A method of monitoring a soil environment for characteristics of the soil environment surrounding plant seeds planted at discrete intervals in soil of a cultivated area, comprising:

an operation of burying the sheet substrate of the sensor device in the soil in a state where the plant seeds planted in the soil are stored in each of the plurality of storage grooves of the sensor device according to any one of claims 6 to 9; and

and an operation of supplying a power supply voltage to the power supply line portion of the sensor device from a control device connected to one end portion in a longitudinal direction of the sheet substrate, and collecting the measurement data output from each of the plurality of detection circuit portions provided in the sensor device via the signal transmission line portion.

11. A method of monitoring a soil environment for characteristics of the soil environment surrounding plant seeds planted at discrete intervals in soil of a cultivated area, comprising:

an operation of burying the sheet substrate of the sensor device in the soil in a state where the plant seeds planted in the soil are stored in each of the plurality of storage grooves of the sensor device according to claim 9;

an operation of supplying a power supply voltage to the power supply line portion of the sensor device from a control device connected to one end portion in a longitudinal direction of the sheet substrate;

switching a plurality of detection circuit units or one detection circuit unit, which are provided on the sheet substrate and have less parts than the whole parts, from a sleep state to an active state by the microcomputer; and

the operation of collecting the measurement data outputted from the detection circuit portion in the active state by the control device via the signal transmission line portion.

12. A method of monitoring a soil environment as claimed in claim 10 or 11 wherein

Continuously monitoring the environmental characteristics of the soil during the period from the germination to the harvest of the seeds buried in the soil based on the environmental data collected by the control device.

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